APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 Mar 1984

Volume 44, Issue 6, pp. 571-644

Page 1 of 2 Pages Next Page | Jump to Page

A new Q switching method by intracavity phase modulation in a semiconductor laser

Ken‐ichi Kitayama and Shyh Wang

Appl. Phys. Lett. 44, 571 (1984); http://dx.doi.org/10.1063/1.94843 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
A new Q switching method for a semiconductor laser is proposed that uses an intracavity phase modulation due to the electro‐optic effect. It consists of an amplifier and two phase modulators driven by a microwave signal in a branching waveguide structure. It is predicted that under Q switching a pulse width of less than 100 ps with an intense peak power of a few watts is obtainable even with dc injection current slightly larger than the threshold by applying a microwave reverse bias voltage to the phase modulators.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Low power transverse optical bistability near bound excitons in cadmium sulfide

M. Dagenais and H. G. Winful

Appl. Phys. Lett. 44, 574 (1984); http://dx.doi.org/10.1063/1.94844 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
We report the observation of cw transverse optical bistability without power hysteresis at 1‐mW power levels in uncoated cadmium sulfide platelets. Optically induced refractive index changes as large as 0.15 are deduced from measurements of the transverse spatial ring profile.
Show PACS
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
71.35.-y Excitons and related phenomena

Tunable far‐infrared spectroscopy

K. M. Evenson, D. A. Jennings, and F. R. Petersen

Appl. Phys. Lett. 44, 576 (1984); http://dx.doi.org/10.1063/1.94845 (3 pages) | Cited 42 times

Full Text: | Download PDF

Show Abstract
Tunable, cw, far‐infrared radiation has been generated by nonlinear mixing of radiation from two CO2 lasers in a metal‐insulator‐metal (MIM) diode. The FIR difference‐frequency power radiated from the MIM diode antenna to a calibrated indium antimonide bolometer. Two‐tenths of a microwatt of FIR power was generated by 250 mW from each of the CO2 lasers. The combination of lines from a waveguide CO2 laser, with its larger tuning range, with lines from CO2, N2O, and CO2 isotope lasers promises complete coverage of the entire far‐infrared band from 100 to 5000 GHz (3–200 cm−1) with stepwise‐tunable cw radiation. To demonstrate the usefulness of the technique, we observed the J=4–5 line of CO at 567 GHz.
Show PACS
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
32.30.Bv Radio-frequency, microwave, and infrared spectra
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Threshold temperature dependence of subnanosecond optically excited 1.3‐μm InGaAsP lasers

O. E. Martinez, J. P. Heritage, B. I. Miller, N. K. Dutta, and R. J. Nelson

Appl. Phys. Lett. 44, 578 (1984); http://dx.doi.org/10.1063/1.94846 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
We report the first measurement of the temperature dependence of the relative threshold carrier density, Nth, in InGaAsP‐InP lasers. The characteristic temperature T′0, defined by 1/T0 ≡d ln Nth/dT, which is independent of nonradiative recombination mechanisms, is determined by transient pumping of a simple double heterostructure laser with optical pulses short (≂100 ps) compared to the carrier lifetime (2–3 ns). A single T′0 as large as 120 K describes an exponential threshold dependence on temperature over a wide temperature range (160–370 K). Comparison with steady state (300 ns) excitation of the same samples shows that nonradiative recombination is responsible for the commonly observed injection laser break from a low‐temperature T0≂100 K to the poorer room‐temperature T0≂65 K. The measured T0 is smaller than a previously calculated value of approximately 200 K.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission

10‐MHz single photon counting at 1.3 μm

B. F. Levine and C. G. Bethea

Appl. Phys. Lett. 44, 581 (1984); http://dx.doi.org/10.1063/1.94847 (2 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
We have demonstrated single photon detection (for λ=1.3 μm) at a counting rate of 10 MHz. This is the highest photon counting rate ever achieved. We find that the quantum efficiency η is a weak function of the dark count rate of rd, namely, η∝(rd)0.2. These results are encouraging for possible quantum limited lightwave receiver applications.
Show PACS
42.79.-e Optical elements, devices, and systems
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Passive Ti:LiNbO3 channel waveguide TE‐TM mode splitter

D. Yap, L. M. Johnson, and G. W. Pratt

Appl. Phys. Lett. 44, 583 (1984); http://dx.doi.org/10.1063/1.94848 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
A passive compact TE‐TM mode splitter has been demonstrated using Ti:LiNbO3 channel waveguides. Its operation is based on the interference between the two guided modes of a double‐mode waveguide segment connecting single‐mode input and output guides. A device made using one set of design parameters has splitting ratios of 12 dB for both polarizations. Another device made using different parameters has a splitting ratio of 17 dB for TM modes. The devices are capable of low‐loss, broadband operation.
Show PACS
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

Electron energy distributions using the time‐resolved free‐bound spectra from coronal plasmas

D. L. Matthews, R. L. Kauffman, J. D. Kilkenny, and R. W. Lee

Appl. Phys. Lett. 44, 586 (1984); http://dx.doi.org/10.1063/1.94835 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
The first subnanosecond, time‐resolved, and spatially localized recombination continuum measurements are reported. The possibility of a non‐Maxwellian velocity distribution is deduced from the shape of the recombination spectrum that is observed during the time when the plasma is being created by the laser. The cooling rate of the plasma is derived for later times, when no laser heating is present.
Show PACS
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Kn Thermodynamics of plasmas
52.20.Fs Electron collisions

Rapid thermal annealing of boron‐implanted silicon using an ultrahigh power arc lamp

R. T. Hodgson, V. R. Deline, S. Mader, and J. C. Gelpey

Appl. Phys. Lett. 44, 589 (1984); http://dx.doi.org/10.1063/1.94836 (3 pages) | Cited 42 times

Full Text: | Download PDF

Show Abstract
We have used an ultrahigh powered, 100‐kW vortex cooled arc lamp to anneal 75‐mm‐diam 〈100〉 silicon wafers implanted with various doses of 50‐keV B+ and BF+2 ions. Sheet resistivity measurements, secondary ion mass spectrometry, and transmission electron microscopy have been used to characterize the annealed wafers. Standard diffusion coefficients predict little dopant movement in the temperature (∼1200 °C) and time (∼1 s) region we studied. However, boron atoms which have been channeled relatively deep into the silicon and left in interstitial positions move ∼100 nm in ∼1 s at low temperatures, then stop. We presume that they encounter a vacancy and become substitutional. The dopant diffusion rate then is close to equilibrium values, and there is little measurable movement between 900 and 1250 °C. A 3‐s lamp cycle with maximum wafer temperature 1230 °C is sufficient to fully activate a 1014 cm−2 BF+2 implant and leave the material with no extended defects. The dopant half‐width and junction depth are 50 and 250 nm for the as‐implanted sample, and 90 and 340 nm for the annealed sample.
Show PACS
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects

Plasma‐assisted epitaxial growth of GaSb in hydrogen plasma

Yasushi Sato, Koichi Matsushita, Takashi Hariu, and Yukio Shibata

Appl. Phys. Lett. 44, 592 (1984); http://dx.doi.org/10.1063/1.94837 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
Plasma‐assisted epitaxy (PAE) has been applied to grow GaSb films at substrate temperatures as low as 340 °C. A hydrogen plasma can reduce the density of residual impurities and/or defects. The hole concentration and Hall mobility of an undoped GaSb layer deposited in a hydrogen plasma at a substrate temperature of 410 °C on a GaAs (100) substrate are about 6×1016 cm−3 and 750 cm2/Vs, respectively, which are comparable to those obtained by other methods like molecular beam epitaxy, metalorganic chemical vapor deposition etc., in spite of a lower substrate temperature in PAE.
Show PACS
68.55.-a Thin film structure and morphology
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Epitaxial regrowth of silicon implanted with argon and boron

M. Delfino, A. Milgram, and M. D. Strathman

Appl. Phys. Lett. 44, 594 (1984); http://dx.doi.org/10.1063/1.94838 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
The epitaxial regrowth of silicon implanted with both argon and boron is performed by isochronal furnace and cw laser annealing. Argon is found to enhance the thermal anneal threshold for boron‐silicon reordering, while itself exhibiting essentially no redistribution after annealing. Boron, by comparison, increases the solid‐phase regrowth velocity and prevents the outdiffusion of argon. Based on these findings, a methodology for forming and preserving shallow boron junctions is suggested.
Show PACS
68.55.-a Thin film structure and morphology
61.72.U- Doping and impurity implantation
72.80.Cw Elemental semiconductors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

High efficiency inversion layer solar cells based on ionizing radiation‐induced surface inversion

Yoshi Okuyama and T‐P. Ma

Appl. Phys. Lett. 44, 596 (1984); http://dx.doi.org/10.1063/1.94839 (3 pages)

Full Text: | Download PDF

Show Abstract
High efficiency inversion layer solar cells have been fabricated using ionizing radiation to produce the inversion layer. A highly conductive transparent film of In2O3 covers the entire cell, which serves as the collecting electrode. A total area efficiency of 16.0% under AM1 illumination (100 mW/cm2) with corresponding open‐circuit voltage, short‐circuit current density, and fill factor of 623 mV, 32.7 mA/cm2, and 78.4% respectively, has been achieved without antireflection coating. The cell is stable at a temperature as high as 250 °C for as long as the test has been going on (several months so far). The fabrication procedure and radiation treatment are described, and some of the test results are presented.
Show PACS
84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.80.Cb X-ray effects

Silicon nitride films deposited with an electron beam created plasma

D. C. Bishop, K. A. Emery, J. J. Rocca, L. R. Thompson, H. Zarnani, and G. J. Collins

Appl. Phys. Lett. 44, 598 (1984); http://dx.doi.org/10.1063/1.94840 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
Silicon nitride films have been deposited using an electron beam created plasma in a silane, ammonia, and nitrogen mixture. The films were deposited at substrate temperatures between 50 and 400 °C. Physical, chemical, and electrical properties of these films are reported.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.-p Physical properties of thin films, nonelectronic
75.20.Ck Nonmetals
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

High‐rate deposition of amorphous hydrogenated silicon from a SiH4 plasma

T. Hamasaki, M. Ueda, A. Chayahara, M. Hirose, and Y. Osaka

Appl. Phys. Lett. 44, 600 (1984); http://dx.doi.org/10.1063/1.94841 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
An extremely high deposition rate of amorphous hydrogenated silicon has been achieved by employing a new rf discharge technique. The deposition rate has been increased to more than 50 Å/s at a substrate temperature of 200 °C without accompanying any appreciable deterioration in the electronic and structural properties as compared to those of specimens prepared at a conventional deposition rate (∼1 Å/s). Thermal stability of the high‐rate samples is improved with respect to that of low‐rate specimens.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.60.-p Physical properties of thin films, nonelectronic

Surface‐energy‐driven secondary grain growth in ultrathin (<100 nm) films of silicon

C. V. Thompson and Henry I. Smith

Appl. Phys. Lett. 44, 603 (1984); http://dx.doi.org/10.1063/1.94842 (3 pages) | Cited 64 times

Full Text: | Download PDF

Show Abstract
Growth of grains with sizes many times (>50×) larger than the film thickness and with uniform (111) texture, has been achieved in ultrathin (<100 nm) films of Si on SiO2. Growth of these secondary grains is driven by minimization of anisotropic surface energy. As a result, the secondary grain growth rate increases with decreasing film thickness. The time required for growth of large secondary grains decreases with increasing temperature.
Show PACS
68.60.-p Physical properties of thin films, nonelectronic
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.35.Md Surface thermodynamics, surface energies
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Bulk acceptor compensation produced in p‐type silicon at near‐ambient temperatures by a H2O plasma

W. L. Hansen, S. J. Pearton, and E. E. Haller

Appl. Phys. Lett. 44, 606 (1984); http://dx.doi.org/10.1063/1.94849 (3 pages) | Cited 53 times

Full Text: | Download PDF

Show Abstract
We report the neutralization of the shallow acceptors boron and gallium in p‐type silicon to a depth >1 μm after exposure to a H2O plasma for 3 h at temperatures as low as 80 °C. The fact that uncompensated n‐type silicon is unaffected by the plasma treatment means that donor formation is excluded. Exposure to either O2 or H2 plasmas does not lead to acceptor removal; however, sequential treatment in an O2 plasma followed by a H2 plasma produces the same effect as the H2O plasma while the inverse sequence has no effect. Our observations can be explained with a model considering rapidly diffusing atomic oxygen and hydrogen which recombine on acceptor sites forming neutral A−OH+ complexes. The model shows that acceptor compensation kinetics is dominated by the diffusion of atomic hydrogen.
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
52.40.Hf Plasma-material interactions; boundary layer effects

Band‐to‐band luminescence of ion‐implanted InP after rapid lamp annealing

D. Kirillov, J. L. Merz, R. Kalish, and A. Ron

Appl. Phys. Lett. 44, 609 (1984); http://dx.doi.org/10.1063/1.94850 (2 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
Room‐temperature band‐to‐band luminescence is studied to evaluate the results of rapid lamp annealing of ion‐implanted InP. Because of the high sensitivity of luminescence to the presence of low concentrations of deep level defects, this technique may be used successfully to characterize the quality of the annealed layers. Heat pulse annealing of SiO2‐capped samples at 950 °C results in material that is better than that obtained by oven annealing, with no sign of surface decomposition.
Show PACS
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

High conversion efficiency and high radiation resistance InP homojunction solar cells

Akio Yamamoto, Masafumi Yamaguchi, and Chikao Uemura

Appl. Phys. Lett. 44, 611 (1984); http://dx.doi.org/10.1063/1.94851 (3 pages) | Cited 30 times

Full Text: | Download PDF

Show Abstract
InP homojunction solar cells have been fabricated using thermal diffusion of sulphur or selenium into p‐type InP substrates. A conversion efficiency of 16.5% (active area) was obtained for a S‐diffused cell under simulated AM1.5 illumination. The InP solar cell was found for the first time to have a higher resistance to γ‐ray radiation degradation than Si and GaAs solar cells with comparable junction depth. These results show a possibility of the InP solar cells for space applications.
Show PACS
84.60.Jt Photoelectric conversion
61.80.Ed γ-ray effects
72.40.+w Photoconduction and photovoltaic effects
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Relationship between collection length and diffusion length in amorphous silicon

Brian Faughnan, Arnold Moore, and Richard Crandall

Appl. Phys. Lett. 44, 613 (1984); http://dx.doi.org/10.1063/1.94852 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
We demonstrate a relationship between the diffusion length lD, as measured by the surface photovoltage (SPV) method and the collection length lco, measured on the same thin films of a‐Si:H. lco is the appropriate quantity to describe current collection in p‐i‐n cells of a‐Si:H, which is normally electric‐field dominated. We have shown previously that lco can be used to predict the fill factor of p‐i‐n cells. Therefore, this letter justifies the use of lD measurements by SPV for optimizing the quality of i layers for p‐i‐n cells. An expression for ambipolar diffusion is presented and the experimental results are used to place limits on the relative magnitudes of electron and hole mobilities and lifetimes.
Show PACS
72.40.+w Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Ng Disordered solids

Correlation between background carrier concentration and x‐ray linewidth for InGaAs/InP grown by vapor phase epitaxy

A. T. Macrander, S. N. G. Chu, K. E. Strege, A. F. Bloemeke, and W. D. Johnston

Appl. Phys. Lett. 44, 615 (1984); http://dx.doi.org/10.1063/1.94853 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
The background carrier concentration of nominally undoped InGaAs/InP grown by the hydride process was found to correlate to the x‐ray linewidth. A double crystal diffractometer was used to measure the mismatch parallel to the (100) surface as well as the more standard perpendicular mismatch. The epitaxial layers were, in general, found to be tetragonally distorted, and the linewidth was found to correlate to the parallel mismatch. Two regimes for the carrier concentration were identified, one for samples having no parallel mismatch and one for samples with parallel mismatch. In the latter case lattice defects which accommodated the misfit strain such as misfit dislocations are concluded to have been responsible for the carrier concentration.
Show PACS
73.40.-c Electronic transport in interface structures
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology
61.05.C- X-ray diffraction and scattering

Optical effective mass of high density carriers in silicon

H. M. van Driel

Appl. Phys. Lett. 44, 617 (1984); http://dx.doi.org/10.1063/1.94854 (3 pages) | Cited 30 times

Full Text: | Download PDF

Show Abstract
The optical effective masses of electrons and holes in silicon are calculated for carrier densities up to 2×1021 cm−3 and temperatures up to 3000 K. This evaluation, which is based on the band structure as determined by the local empirical pseudopotential method, indicates that the carrier masses for high density plasmas can be up to two times larger than the corresponding low density values. For electrons, this occurs primarily because of increasing warpage of the (low density) ellipsoidal constant energy surfaces with increasing energy, while for holes the effect is primarily due to nonparabolicity of the valence bands. Carrier‐carrier interactions and carrier‐lattice screening do not influence the effective masses significantly.
Show PACS
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
72.20.Pa Thermoelectric and thermomagnetic effects
71.20.Mq Elemental semiconductors
72.80.Cw Elemental semiconductors

Excitation and Fe concentration dependences in the impulse photoconductance of InP:Fe

R. B. Hammond, N. G. Paulter, R. S. Wagner, and T. E. Springer

Appl. Phys. Lett. 44, 620 (1984); http://dx.doi.org/10.1063/1.94855 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
We report impulse response measurements on InP:Fe photoconductors excited by laser and electron beam radiation. Measurements are reported on crystals with Fe concentrations from 2×1015 cm−3 to 4×1016 cm−3 and with excited electron‐hole‐pair densities of ∼1012 cm−3 and 9×1017 cm−3. Measured signal decays are purely exponential in character, and decay times are inversely related to Fe concentration. No long‐lived tails are observed. Decay times show no dependence on excitation level for excited carrier concentrations that are well above and well below the Fe concentrations. The magnitude of the photoresponse indicates that electrons and not holes are the primary current carriers. The data suggest that for impulse excitation photoconductance decay in InP:Fe is due to trap‐assisted recombination of electrons and holes at the Fe sites, with a rate determined by the species with the slower capture rate.
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
79.20.Ds Laser-beam impact phenomena
79.20.Kz Other electron-impact emission phenomena

High resolution transmission electron microscopy study of Se+‐implanted and annealed GaAs: Mechanisms of amorphization and recrystallization

D. K. Sadana, T. Sands, and J. Washburn

Appl. Phys. Lett. 44, 623 (1984); http://dx.doi.org/10.1063/1.94856 (3 pages) | Cited 32 times

Full Text: | Download PDF

Show Abstract
High resolution transmission electron microscopy (HRTEM) has been applied to the study of amorphization and recrystallization mechanisms in Se+‐implanted (100) GaAs. Selenium dose of 1×1014 cm−2 at 450 keV (projected range 1550 Å) produced an amorphous band in the depth range 250–2150 Å below the surface. Annealing at 400 °C resulted in the epitaxial regrowth of the upper and lower transition region (0–250 Å and 2150–2500 Å, respectively). Regrowth of the amorphous layer was found to proceed by the nucleation and propagation of the dense network of stacking fault bundles. Amorphization and recrystallization mechanisms in Se+‐implanted GaAs are discussed in light of these HRTEM results.
Show PACS
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
64.70.D- Solid-liquid transitions
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.72.U- Doping and impurity implantation

Growth kinetics of thin silicon dioxide in a controlled ambient oxidation system

K. K. Ng, W. J. Polito, and J. R. Ligenza

Appl. Phys. Lett. 44, 626 (1984); http://dx.doi.org/10.1063/1.94857 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
The growth kinetics of thin silicon oxide films less than 300 Å are studied by using a stainless steel controlled ambient oxidation system. The oxidation system features resistive heating of silicon and high vacuum capability of 10−8 Torr. It is shown that the data, obtained in the oxygen pressure range of 0.01–0.5 atmosphere and in the temperature range of 930–1030 °C, can be approximated by parabolic growth law, with an activation energy of 1.34 eV. Electrical characteristics pertinent to metal‐oxide‐semiconductor devices are also described.
Show PACS
68.55.-a Thin film structure and morphology
81.65.-b Surface treatments
77.55.-g Dielectric thin films
68.60.-p Physical properties of thin films, nonelectronic

Bulk and transfer doping effects in AlxGa1−xAs layers grown on semi‐insulating GaAs substrates

R. J. Nicholas, M. A. Brummell, J. C. Portal, G. Gregoris, S. Hersee, and J. P. Duchemin

Appl. Phys. Lett. 44, 629 (1984); http://dx.doi.org/10.1063/1.94858 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
The observation of both bulk and two‐dimensional conduction is reported in GaAlAs layers grown by metalorganic chemical vapor deposition on undoped semi‐insulating GaAs substrates. The electron concentrations were determined from Shubnikov–de Haas periodicities in different magnetic field configurations. Bulk conduction is found to dominate at 4.2 K only after illumination with above band‐gap light. This is interpreted as due to spatial transfer of some carriers with the GaAlAs layer.
Show PACS
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
61.72.U- Doping and impurity implantation

Efficient AlGaAs shallow‐homojunction solar cells

R. P. Gale, John C. C. Fan, G. W. Turner, R. L. Chapman, and J. V. Pantano

Appl. Phys. Lett. 44, 632 (1984); http://dx.doi.org/10.1063/1.94859 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Shallow‐homojunction n+/p/p+ solar cells with one‐sun, AM1 conversion efficiencies as high as 12.9% have been fabricated in Al0.2Ga0.8As epitaxial layers grown by organometallic chemical vapor deposition on single‐crystal GaAs substrates. For these cells, which have n+ layers thinned by anodic oxidation to about 500 Å, the quantum efficiencies in the short‐wavelength portion of the spectrum are as high as the best reported for AlGaAs cells with high band‐gap window layers.
Show PACS
72.40.+w Photoconduction and photovoltaic effects
68.55.-a Thin film structure and morphology
84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close