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15 Apr 1984

Volume 44, Issue 8, pp. 713-815

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Anomalous laser penetration depths in multilayer planar targets

A. Ng, D. Pasini, and P. Celliers

Appl. Phys. Lett. 44, 713 (1984); http://dx.doi.org/10.1063/1.94919 (3 pages) | Cited 1 time

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Anomalously large laser penetration depths in multilayer planar targets have been observed. Density dependence of the penetration depth also showed significant deviations from the theoretical scaling for laser‐driven ablation. A simple model was proposed in which the ablation process was modified by an edge effect due to the small focal spot.
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79.20.Ds Laser-beam impact phenomena

Observation of optical hysteresis in an all‐optical passive ring cavity containing molecular gas

R. G. Harrison, W. J. Firth, C. A. Emshary, and I. A. Al‐Saidi

Appl. Phys. Lett. 44, 716 (1984); http://dx.doi.org/10.1063/1.94920 (3 pages) | Cited 4 times

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Dispersive optical hysteresis in an all optical passive unidirectional ring cavity containing a molecular gas has been observed. Ammonia is used as the nonlinear medium off resonantly excited on the aR(1,1) transition using temporally smooth 100‐ns pulses from a transversely, excited, atmospheric pressure CO2 laser. Results are in excellent agreement with the theory of Ikeda recently generalized by the authors to describe period doubling in this system.
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51.70.+f Optical and dielectric properties
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.79.Hp Optical processors, correlators, and modulators

Low jitter streak camera triggered by subpicosecond laser pulses

R. Yen, P. M. Downey, C. V. Shank, and D. H. Auston

Appl. Phys. Lett. 44, 718 (1984); http://dx.doi.org/10.1063/1.94921 (3 pages) | Cited 5 times

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We demonstrate the operation of an optically synchronized streak camera operating at 10‐Hz repetition rate and has a system jitter of less than 2 ps. Synchronization is achieved with an iron‐doped indium phosphide photoconductive switch which allows for room‐temperature dc biasing. Femtosecond laser pulses are used for measuring the time response of the streak camera.
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07.68.+m Photography, photographic instruments; xerography
06.60.Jn High-speed techniques (microsecond to femtosecond)
85.60.-q Optoelectronic devices

Optical properties of transparent and heat‐reflecting indium tin oxide films: The role of ionized impurity scattering

I. Hamberg and C. G. Granqvist

Appl. Phys. Lett. 44, 721 (1984); http://dx.doi.org/10.1063/1.94896 (3 pages) | Cited 29 times

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The complex dynamical resistivity of high‐quality transparent and heat‐reflecting indium tin oxide films, prepared by reactive e‐beam deposition, was evaluated from spectrophotometric measurements in the 0.25–50‐μm wavelength range. These data are explained in detail from a theory encompassing scattering of free electrons by ionized impurities.
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75.20.Ck Nonmetals
72.30.+q High-frequency effects; plasma effects
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
81.40.Tv Optical and dielectric properties related to treatment conditions

Holographic moire deflectometry—A method for stiff density fields analysis

J. Stricker and J. Politch

Appl. Phys. Lett. 44, 723 (1984); http://dx.doi.org/10.1063/1.94922 (3 pages) | Cited 2 times

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This letter presents a method for the analysis of stiff density fields in which weak density gradients as well as strong ones, pointing in different directions, exist. Holographic techniques are used to freeze the deviated rays of a collimated beam traveling through a phase object. The hologram is post analyzed by the ‘‘moire deflectometry’’ method, where the sensitivity, the spatial resolution, and the direction along which the density gradients are measured, may easily be changed and adjusted to the different density regions in the field. It was found that this technique is very useful for short duration stiff fields where density mapping during one pulse is desired.
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06.30.Dr Mass and density
42.40.My Applications
47.80.-v Instrumentation and measurement methods in fluid dynamics

10‐W cw optically pumped 12‐μm NH3 laser

C. Rolland, J. Reid, and B. K. Garside

Appl. Phys. Lett. 44, 725 (1984); http://dx.doi.org/10.1063/1.94923 (3 pages) | Cited 6 times

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A 37‐W cw CO2 laser operating on the R(30) 9‐μm transition is used to pump a linear waveguide cavity containing NH3. Raman emission at 12.08 μm is observed with a cw output power of 10.2 W. This performance represents a photon conversion efficiency of >40%, the highest yet reported for a cw optically pumped infrared laser.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.By Design of specific laser systems

Multicolor passive (self‐pumped) phase conjugation

Mark Cronin‐Golomb, Sze‐Keung Kwong, and Amnon Yariv

Appl. Phys. Lett. 44, 727 (1984); http://dx.doi.org/10.1063/1.94924 (3 pages) | Cited 11 times

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Passive phase conjugation of up to six lines (457, 476, 488, 496, 501, and 514 nm) of the all lines output of an argon ion laser is reported. Imaging characteristics and reflectivity measurements are given. In general, multiline operation results in some loss in both reflectivity and image resolution. This work opens the possibility for passive phase conjugation of full color images.
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42.65.-k Nonlinear optics
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.30.Va Image forming and processing
42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors

80× single‐stage compression of frequency doubled Nd:yttrium aluminum garnet laser pulses

A. M. Johnson, R. H. Stolen, and W. M. Simpson

Appl. Phys. Lett. 44, 729 (1984); http://dx.doi.org/10.1063/1.94897 (3 pages) | Cited 37 times

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Single‐stage compression factors as high as 80× have been demonstrated for the 0.532‐μm optical pulses of a frequency doubled Nd:yttrium aluminum garnet laser using a single‐mode fiber and a modified grating‐pair delay line. Input optical pulses of 33‐ps duration have been compressed to 0.41‐ps duration. This represents the largest single‐stage compression factor reported to date. Subpicosecond optical pulses can be obtained directly from relatively long optical pulses without the use of a mode‐locked dye laser.
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42.81.-i Fiber optics
42.65.-k Nonlinear optics
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Fc Modulation, tuning, and mode locking

Carrier dependence of the radiative coefficient in III‐V semiconductor light sources

C. B. Su, R. Olshansky, J. Manning, and W. Powazinik

Appl. Phys. Lett. 44, 732 (1984); http://dx.doi.org/10.1063/1.94898 (3 pages) | Cited 9 times

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In this letter the carrier dependence of the radiative bimolecular coefficients obtained from differential carrier lifetime measurements is reported. The bimolecular coefficient B(n) decreases significantly with carrier density. It is found that B(n) is well approximated by B(n)≂B0−B1n, with B1/B0=(1.1±0.2)×10−19 cm3 for GaAlAs and (1.6±0.2)×10−19 cm3 for 1.3 μm InGaAsP. This effect has a strong influence on the spontaneous emission efficiency in both InGaAsP and GaAlAs light sources.
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42.55.Px Semiconductor lasers; laser diodes
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.60.-b Other luminescence and radiative recombination
85.60.Jb Light-emitting devices

Optoelectronic properties of coupled cavity semiconductor lasers

K. J. Ebeling and L. A. Coldren

Appl. Phys. Lett. 44, 735 (1984); http://dx.doi.org/10.1063/1.94899 (3 pages) | Cited 1 time

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Differential voltage‐current characteristics of coupled cavity semiconductor lasers are studied experimentally. Lasing thresholds of individual cavities, regions of single mode or multimode oscillation, or mode hop locations are easily obtained from the analysis. The optoelectronic properties can be used for monitoring operating states of the lasing system without requiring external optical elements.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Differential effective medium theory of sedimentary rocks

Ping Sheng and A. J. Callegari

Appl. Phys. Lett. 44, 738 (1984); http://dx.doi.org/10.1063/1.94900 (3 pages) | Cited 13 times

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We show that both the electrical and acoustic properties of fluid‐saturated sedimentary rocks can be described within the unified framework of differential effective medium theory. Calculations based on the differential effective medium picture of rock microstructure yield predictions of sonic travel times and acoustic attenuation in good agreement with experimental data. In particular, the theory shows that the large frequency peak in attenuation and its associated velocity dispersion observed in sandstones are characteristic of a composite system containing fluid‐filled microcracks.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
43.20.Hq Velocity and attenuation of acoustic waves
91.60.Pn Magnetic and electrical properties

Experimental investigation of a magnetic gate as a multimegampere, vacuum opening switch

D. R. Kania, L. A. Jones, E. L. Zimmermann, L. R. Veeser, and R. J. Trainor

Appl. Phys. Lett. 44, 741 (1984); http://dx.doi.org/10.1063/1.94901 (3 pages) | Cited 3 times

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We report on the first experiments to demonstrate the vacuum operation of a magnetic gate opening switch. Currents greater than 1 MA have been transferred in approximately 1 μs. A model has been developed to describe the switch’s operation. The model and the experimental data are in excellent agreement.
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52.75.Hn Plasma torches
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
85.70.-w Magnetic devices
84.32.Dd Connectors, relays, and switches

Arsenic out‐diffusion during TiSi2 formation

Jun Amano, P. Merchant, and Tim Koch

Appl. Phys. Lett. 44, 744 (1984); http://dx.doi.org/10.1063/1.94902 (3 pages) | Cited 22 times

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The behavior of implanted As atoms during high‐temperature (800–900 °C) TiSi2 formation was investigated by helium backscattering. A significant As loss was observed during TiSi2 formation by vacuum furnace annealing. The main factors influencing the As loss were the initial As profiles and Ti film thickness. Most of the As loss was caused by rapid As out‐diffusion through the TiSi2 layer; the remaining As atoms were only observed in the Si substrate after TiSi2 formation. As long as the As distribution was deeper than the TiSi2 layer, the loss of As atoms was kept to a minimum. Careful selection of the As implantation energy and the Ti film thickness can achieve high As concentration at the TiSi2/Si interface.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities

Erbium silicide formation using a line‐source electron beam

J. A. Knapp, S. T. Picraux, C. S. Wu, and S. S. Lau

Appl. Phys. Lett. 44, 747 (1984); http://dx.doi.org/10.1063/1.94903 (3 pages) | Cited 17 times

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Rare‐earth silicide layers typically are heavily pitted when formed by furnace reaction of thin metal films with a silicon substrate. We show that this phenomenon can be explained by an inhibiting contamination layer which has a high activation energy for dissolution relative to that for silicide growth. Very smooth erbium silicide growth has been demonstrated by reacting the layers at much higher temperatures (1100–1300 K) for 200–500 μs, using electron beam heating. A novel combination of controlled electron beam heating, ion beam analysis, and computational simulation has been used to determine an activation energy for interface barrier dissolution of 3.7±0.3 eV.
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68.55.-a Thin film structure and morphology
64.70.K- Solid-solid transitions
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
68.60.-p Physical properties of thin films, nonelectronic

Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and model

Mark E. Greiner and James F. Gibbons

Appl. Phys. Lett. 44, 750 (1984); http://dx.doi.org/10.1063/1.94904 (3 pages) | Cited 112 times

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Rapid thermal processing was used to diffuse Si into GaAs from a thin elemental source. Several encapsulants were applied. The diffusion was found to be dependent on the type of encapsulant. A model is developed based on the formation and rapid diffusion of Si nearest neighbor donor‐acceptor pairs. Results from the codiffusion of Si and Ge support this model.
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66.30.J- Diffusion of impurities

Direct measurement of optoacoustic induced ultrasonic waves

Chien‐Yu Kuo and C. K. N. Patel

Appl. Phys. Lett. 44, 752 (1984); http://dx.doi.org/10.1063/1.94905 (3 pages) | Cited 1 time

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The two‐beam optically induced photoacoustic grating and the subsequent low‐frequency ultrasonic waves are measured with thin‐film transducer in low concentration dye solution. The acoustic power generated is measured for a weakly absorbing medium to be ≊5 W/cm2 indicating high conversion efficiency. Application of this direct detection as a laser beam profiler is also discussed.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
62.60.+v Acoustical properties of liquids
62.65.+k Acoustical properties of solids
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Laser induced metal deposition from organometallic solution

H. Yokoyama, S. Kishida, and K. Washio

Appl. Phys. Lett. 44, 755 (1984); http://dx.doi.org/10.1063/1.94906 (3 pages) | Cited 19 times

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Solutions of bisbenzene metals in organic solvents have been used for the first time to produce localized deposition of metals on a glass substrate by laser induced pyrolysis. Molybdenum and chromium spots, as small as 10 μm in diameter, were obtained by using an argon‐ion laser at several tens of milliwatt power.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.50.-m Photochemistry

Mechanism for dynamic annealing during high flux ion irradiation in Si

O. W. Holland and J. Narayan

Appl. Phys. Lett. 44, 758 (1984); http://dx.doi.org/10.1063/1.94907 (3 pages) | Cited 18 times

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The results of high current density implantation of Si and As ions are presented. Significant lattice recovery during implantation is shown to occur as a result of ‘‘dynamic’’ or self‐annealing processes. The mechanism for these processes will be discussed. Also, the morphology of the residual damage is shown to depend critically upon the mass of the implanted ion and the current density.
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61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.55.-a Thin film structure and morphology

Thin organic films produced by ion implantation

L. Calcagno, K. L. Sheng, L. Torrisi, and G. Foti

Appl. Phys. Lett. 44, 761 (1984); http://dx.doi.org/10.1063/1.94908 (3 pages) | Cited 7 times

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Ion bombardment of frozen benzene produces a polymeric film, the thickness of which can be controlled by changing the energy (30–100 keV) of the incoming helium beam. IR spectra and proton scattering analysis show that basic components of the film are hydrogen and carbon in the elemental ratio of about 3:1.
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61.80.Jh Ion radiation effects
61.72.U- Doping and impurity implantation
68.55.-a Thin film structure and morphology
68.60.-p Physical properties of thin films, nonelectronic

Photoemission studies of a‐SixC1−x:H/a‐Si and a‐SixC1−x:H/ hydrogenated amorphous silicon heterojunctions

F. Evangelisti, P. Fiorini, C. Giovannella, F. Patella, P. Perfetti, C. Quaresima, and M. Capozi

Appl. Phys. Lett. 44, 764 (1984); http://dx.doi.org/10.1063/1.94909 (3 pages) | Cited 17 times

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The interfaces between hydrogenated amorphous silicon‐carbon alloy and amorphous silicon, both hydrogenated and not, were investigated by photoemission spectroscopy. It is found that the valence‐band discontinuity is 0.15±0.1 eV for the amorphous Si case and zero within the experimental uncertainty for the hydrogenated amorphous Si. The relevance of this result for understanding the behavior of the p‐i‐n amorphous solar cells is discussed.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.-b Surface treatments
71.23.-k Electronic structure of disordered solids
84.60.Jt Photoelectric conversion

Heteroepitaxial growth of high mobility InAsP from the vapor phase

P. J. Wang and B. W. Wessels

Appl. Phys. Lett. 44, 766 (1984); http://dx.doi.org/10.1063/1.94910 (3 pages) | Cited 6 times

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High quality InAsxP1−x epitaxial layers were heteroepitaxially deposited on InP substrates from the vapor phase using the hydride technique. For phosphorus rich alloys electron mobilities as high as 29 800  cm2/Vs were observed at 77 K. Electrical data indicated that ionized impurity scattering was limiting the mobility at low temperatures since alloys had 77‐K mobilities comparable to that of InP grown in this system. Alloys with high electron mobilities could be prepared without deliberate compositional grading.
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68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Direct confirmation of the conduction‐band lineup in the CuInSe2‐CdS heterojunction solar cell

M. Turowski, M. K. Kelly, G. Margaritondo, and R. D. Tomlinson

Appl. Phys. Lett. 44, 768 (1984); http://dx.doi.org/10.1063/1.94911 (3 pages) | Cited 9 times

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We applied to the CuInSe2‐CdS system the Katnani–Margaritondo rule for estimating heterojunction‐band discontinuities from photoemission measurements. We found that the CuInSe2 conduction‐band edge is 0.2 eV above the CdS conduction‐band edge. This band‐edge lineup explains the efficiency of p‐CuInSe2/n‐CdS solar cells.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.-b Surface treatments
72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion

Bulk nucleation and amorphous phase formation in highly undercooled molten silicon

R. F. Wood, D. H. Lowndes, and J. Narayan

Appl. Phys. Lett. 44, 770 (1984); http://dx.doi.org/10.1063/1.94912 (3 pages) | Cited 34 times

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Solidification of undercooled liquid (l) Si formed by pulsed laser melting of amorphous (a) layers has been studied experimentally and theoretically. Bulk nucleation apparently occurs at a temperature higher than that of the l→a phase transition. Release of latent heat on nucleation is crucial in determining the depth of melting. It is emphasized that bulk nucleation implies that the l→a transition cannot be explained by purely thermodynamic considerations.
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64.70.D- Solid-liquid transitions
05.70.-a Thermodynamics
81.30.Fb Solidification
61.50.Ks Crystallographic aspects of phase transformations; pressure effects

Hot‐electron velocity overshoot in Ga0.47In0.53As

A. Ghosal, D. Chattopadhyay, and N. N. Purkait

Appl. Phys. Lett. 44, 773 (1984); http://dx.doi.org/10.1063/1.94913 (2 pages) | Cited 9 times

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Velocity overshoot phenomena in Ga0.47In0.53As to the application of uniform electric fields are investigated using recent values of the material parameters. The effects of the ambient temperature and of the doping concentration are studied. The material is found to yield peak drift velocities larger than those in GaAs. The values of the peak velocity are greater for short lengths of the active region, low impurity concentration, and low ambient temperatures.
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72.30.+q High-frequency effects; plasma effects
72.20.Ht High-field and nonlinear effects
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Below band‐gap photoluminescence of Hg1−xCdxTe

D. L. Polla and R. L. Aggarwal

Appl. Phys. Lett. 44, 775 (1984); http://dx.doi.org/10.1063/1.94914 (2 pages) | Cited 6 times

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We have applied the technique of below band‐gap photoluminescence to the narrow gap semiconductor Hg0.7Cd0.3Te. A single peak in the observed photoluminescence spectra for liquid phase epitaxial samples has been interpreted as being due to a spontaneous transition from a deep donor level at approximately 0.4Eg to the valence band. The energy associated with this photoluminescence peak corresponds closely to deep level activation energies obtained by both optical modulation spectroscopy and thermally excited relaxation characterization techniques.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
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