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1 May 1984

Volume 44, Issue 9, pp. 821-935

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Identification of germanium and tin donors in InP

M. S. Skolnick, P. J. Dean, L. L. Taylor, D. A. Anderson, S. P. Najda, C. J. Armistead, and R. A. Stradling

Appl. Phys. Lett. 44, 881 (1984); http://dx.doi.org/10.1063/1.94966 (3 pages) | Cited 17 times

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Central cell structure due to germanium and tin donors in InP is identified in carefully back‐doped vapor phase epitaxial material. Both near band edge photoluminescence and far infrared photoconductivity in high magnetic fields are employed to resolve spectral features arising from different donor species. Relative to the likely effective mass donor binding energy of 5.46 meV, the Ge and Sn chemical shifts are deduced to be 0.30 and 0.21 meV, respectively.
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78.40.Fy Semiconductors
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
82.80.Dx Analytical methods involving electronic spectroscopy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Monolayer surface doping of GaAs from a plated zinc source

D. M. Dobkin and J. F. Gibbons

Appl. Phys. Lett. 44, 884 (1984); http://dx.doi.org/10.1063/1.94940 (3 pages) | Cited 6 times

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We have investigated surface doping and diffusion of Zn in GaAs using rapid thermal processing. The use of an aqueous RuCl3 pretreatment has enabled us to electroplate uniform ≊100‐Å‐thick Zn layers directly on the GaAs surface. The excess Zn is removed with a 500 °C vacuum ‘‘evaporation,’’ leaving a modified surface layer which may serve as a dopant source for rapid thermal diffusion. Evaporation of A1 onto such surfaces yields Schottky diodes with enhanced barrier heights which have been used to fabricate metal‐semiconductor field‐effect transistor structures.
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61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities
85.30.Tv Field effect devices
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Detection of hydrogen induced Schottky barrier modulation in Pd/SiOx/a‐Si:H diodes by photoemission with synchrotron radiation

G. Fortunato, A. D’Amico, C. Coluzza, F. Sette, C. Capasso, F. Patella, C. Quaresima, and P. Perfetti

Appl. Phys. Lett. 44, 887 (1984); http://dx.doi.org/10.1063/1.94967 (3 pages) | Cited 5 times

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The Pd/SiOx/a‐Si:H hydrogen sensor has been investigated by photoemission spectroscopy with synchrotron radiation. We measured directly the valence‐band discontinuity and the built‐in potential during the first stage of formation of the interface obtained by depositing thin amorphous silicon overlayers on Pd/SiOx substrates. Changes of the interface parameters were measured after hydrogen exposure and subsequent hydrogen removal with oxygen. Hydrogen sensitivity is related to hydrogen induced Schottky barrier modulation.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Cg Contact resistance, contact potential
81.65.-b Surface treatments

Low‐temperature oxygen diffusion in silicon

W. L. Hansen, S. J. Pearton, and E. E. Haller

Appl. Phys. Lett. 44, 889 (1984); http://dx.doi.org/10.1063/1.94968 (3 pages) | Cited 12 times

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Using the formation of the proposed neutral acceptor‐hydroxyl complex AOH as a marker, the diffusion coefficient of a mobile oxygen species introduced in p‐type silicon from a plasma source at near ambient temperatures is determined to be D0=3.0×10−10 exp(−3.0/kT) cm2 s−1. At 35 °C the diffusion of this unbound oxygen species is 30 times faster than the effective diffusion of atomic H introduced in a similar manner. An activation energy of 1.60 eV is found for the thermal dissociation of this oxygen species bound to boron.
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66.30.J- Diffusion of impurities
52.40.Hf Plasma-material interactions; boundary layer effects

Changes in the optical reflectivity of implanted silicon as a function of implantation energy

H. Aharoni and P. L. Swart

Appl. Phys. Lett. 44, 892 (1984); http://dx.doi.org/10.1063/1.94925 (3 pages) | Cited 5 times

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Experimental results are presented regarding the changes in optical reflectivity of 31p+‐implanted Si as a function of implantation energy. Three curves of R vs E are obtained for low, intermediate, and high doses. Each of them exhibits distinctly different reflectivity functions. However, they all indicate that the optical behavior at λ=632.8 nm is dominated by optical interference in the damaged layer and the crystalline silicon.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.80.Jh Ion radiation effects
61.72.U- Doping and impurity implantation
81.40.Tv Optical and dielectric properties related to treatment conditions

Interface effects in titanium and hafnium Schottky barriers on silicon

Marc A. Taubenblatt, Douglas Thomson, and C. R. Helms

Appl. Phys. Lett. 44, 895 (1984); http://dx.doi.org/10.1063/1.94926 (3 pages) | Cited 37 times

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The effect of Si surface contaminants present prior to metal deposition, and that of post‐metalization anneals has been investigated for Ti and Hf Schottky barriers on Si. These diodes have been prepared in ultrahigh vacuum, characterized with Auger spectroscopy and measured in situ using internal photoemission, and ex situ using current‐voltage measurements. Although barriers to p‐type Si as high as 0.9 eV have been reported in the literature for these metals, barriers of 0.72 eV were the highest observed in this investigation, for surfaces contaminated with significant amounts of oxygen.
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73.30.+y Surface double layers, Schottky barriers, and work functions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.65.-b Surface treatments
85.30.Hi Surface barrier, boundary, and point contact devices

Study of the initial stages of growth of CdTe on (001)GaAs

H. A. Mar, N. Salansky, and K. T. Chee

Appl. Phys. Lett. 44, 898 (1984); http://dx.doi.org/10.1063/1.94927 (3 pages) | Cited 33 times

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The initial stages of growth of CdTe on (001) GaAs have been studied using Auger electron spectroscopy and reflection high‐energy electron techniques. At the growth temperature of 225 °C tellurium atoms are observed to be adsorbed to a thickness of one to two monolayers on a thermally cleaned GaAs substrate. However, cadmium atoms are adsorbed only when tellurium atoms are present. An analysis of the Auger electron spectra and the reflection high‐energy electron diffraction patterns taken at intervals during the initial growth of CdTe films from a CdTe compound source indicates that growth takes place first by the deposition of one to two monolayers of tellurium. This is followed by the nucleation and growth of CdTe crystallites which increase in size and coalesce to form a single crystal of CdTe with a (111) CdTe ∥ (001) GaAs orientation.
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68.55.-a Thin film structure and morphology
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Outdiffusion of Si through gold films: The effects of Si orientation, gold deposition techniques and rates, and annealing ambients

Chin‐An Chang and G. Ottaviani

Appl. Phys. Lett. 44, 901 (1984); http://dx.doi.org/10.1063/1.94928 (3 pages) | Cited 21 times

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Outdiffusion of Si through thin gold films has been studied for (100) and (111) oriented Si wafers in different ambients. The gold films were deposited either by electron beam evaporation or by sputtering, each with two widely different rates. Using air annealings, higher outdiffusion rates of Si are observed for the Au/(100)Si samples than the corresponding Au/(111)Si ones for both deposition techniques, the difference being much more pronounced in the electron beam deposition case; samples with sputtering of gold all show higher outdiffusion rates of Si than their counterparts using the electron beam technique; higher deposition rates of gold also give rise to higher outdiffusion rates of Si, especially for the sputtering case. Similar effects of the Si orientation and gold deposition parameters have also been observed for the samples annealed in N2‐O2 mixtures, but with much lower outdiffusion rates of Si than those annealed in air. Several mechanisms are suggested for the effects observed.
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66.30.J- Diffusion of impurities
68.55.-a Thin film structure and morphology
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Liquid phase epitaxial growth of AlGaInPAs lattice matched to GaAs

S. Mukai, H. Yajima, Y. Mitsuhashi, S. Yanagisawa, and N. Kutsuwada

Appl. Phys. Lett. 44, 904 (1984); http://dx.doi.org/10.1063/1.94929 (3 pages) | Cited 9 times

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Liquid phase epitaxial growth of (AlxGa1−x)1−zInzPyAs1−y lattice matched to GaAs is investigated. Uniform layers with high emission efficiency are obtained for x∼0.3 and y<0.1. Distribution coefficients of Al, Ga, In, P, and As at 850 °C are 100, 0.7, 0.03, 100, and 10, respectively. Interpolation formulae of composition dependence of energy gaps and of lattice constant are given and are compared with experimental results.
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68.55.-a Thin film structure and morphology
78.40.Fy Semiconductors
68.60.-p Physical properties of thin films, nonelectronic
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Identification of AsGa antisite defects in liquid encapsulated Czochralski GaAs

K. Elliott, R. T. Chen, S. G. Greenbaum, and R. J. Wagner

Appl. Phys. Lett. 44, 907 (1984); http://dx.doi.org/10.1063/1.94930 (3 pages) | Cited 43 times

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We have identified the electron paramagnetic resonance (EPR) spectrum of the As on a Ga site (AsGa) defect in bulk undoped liquid encapsulated Czochralski grown GaAs. The intensity of the EPR signal can be correlated with the concentration of compensating carbon acceptors in the GaAs crystals. These results indicate that AsGa are responsible for the compensation of the undoped semi‐insulating material, and thus can be identified with the deep donor EL2 in such material.
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78.40.Fy Semiconductors
76.30.Mi Color centers and other defects
72.80.Ey III-V and II-VI semiconductors

Field controlled charge trapping in tunnel oxides

Kiyoko Nagai and Yutaka Hayashi

Appl. Phys. Lett. 44, 910 (1984); http://dx.doi.org/10.1063/1.94931 (3 pages) | Cited 3 times

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The formation of oxide traps and interface traps in 3.5‐nm oxides has been investigated using a metal‐oxide‐silicon capacitor subjected to forward bias stress. Negative charged traps causing current reduction were created by injecting electrons from a gate electrode in an oxide field greater than 3.7 MV/cm. Increase of current and negative shift in the capacitance‐voltage curve, which indicated the formation of positively charged traps and interface traps, was observed for oxide fields greater than 5.4 MV/cm.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Electrical transport properties of CoSi2 and NiSi2 thin films

J. C. Hensel, R. T. Tung, J. M. Poate, and F. C. Unterwald

Appl. Phys. Lett. 44, 913 (1984); http://dx.doi.org/10.1063/1.94932 (3 pages) | Cited 83 times

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Transport studies have been performed on thin films of CoSi2 and NiSi2 in the temperature range 1–300 K. The conductivities are metallic with essentially the same temperature dependence; however, the residual resistivities are markedly different even though the two silicides are structurally similar (the room‐temperature resistivity of NiSi2 being at least twice that of CoSi2 of 15 μΩ cm). The difference is attributed to intrinsic defects in NiSi2. This defect has been simulated by ion bombardment of the film where it is also shown that Matthiessen’s rule is obeyed over a remarkable range of bombardment doses.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions
61.80.Jh Ion radiation effects
68.60.-p Physical properties of thin films, nonelectronic

Effects of annealing on the dark conductivity and photoconductivity of rf sputtered hydrogenated amorphous silicon

M. C. Ozturk and M. G. Thompson

Appl. Phys. Lett. 44, 916 (1984); http://dx.doi.org/10.1063/1.94933 (3 pages) | Cited 4 times

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The dark conductivity and photoconductivity of rf sputtered hydrogenated amorphous silicon (a‐Si:H) as a function of annealing temperature and hydrogen partial pressure are reported. Isochronal annealing to 350 °C results in a decrease in dark conductivity and an increase in photoconductivity consistent with a reduction in the density of states in the pseudogap. Annealing above 350 °C has the effect of sharply increasing the dark conductivity in more heavily hydrogenated samples and decreasing the photoconductivity. This behavior is associated with the generation of defect states due to hydrogen evolution. The results indicate that annealing rf sputtered a‐Si:H below 350 °C can lead to improved electrical properties.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Rs Electrical and magnetic properties related to treatment conditions
71.55.Jv Disordered structures; amorphous and glassy solids

Superconducting critical current density of bronze processed pure and alloyed Nb3Sn at very high magnetic fields (up to 24 T)

M. Suenaga, K. Tsuchiya, and N. Higuchi

Appl. Phys. Lett. 44, 919 (1984); http://dx.doi.org/10.1063/1.94934 (3 pages) | Cited 4 times

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Superconducting critical current densities Jc of pure and alloyed Nb3Sn layers of bronze processed monofilamentary wires were measured at 1.8 and 4.2 K in magnetic fields up to 24 T. The maximum in Jc at 20 T was found for Nb3Sn layers which were fabricated using (Nb ∼3.3 at. % Ti) cores, and the values of Jc were ∼670 and ∼370 A/mm2 at 1.8 and 4.2 K, respectively. These values are ∼5 and ∼25 times greater than those for ‘‘pure’’ Nb3Sn wires at these same temperatures. The functional dependence of Jc on the Ti content was also identical to that for the measured values of Hc2 vs Ti content for these wires. The maximum value of Hc2 of the wires with the matrix in place was 26.3 T for the wire which was fabricated from the core containing 3.3 at. % Ti in Nb.
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74.25.Sv Critical currents
74.70.-b Superconducting materials other than cuprates
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.Op Mixed states, critical fields, and surface sheaths

Correlation of acoustic emission with normal zone occurrence in epoxy‐impregnated windings: An application of acoustic emission diagnostic technique to pulse superconducting magnets

O. Tsukamoto and Y. Iwasa

Appl. Phys. Lett. 44, 922 (1984); http://dx.doi.org/10.1063/1.94935 (3 pages) | Cited 3 times

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We report results of experiments correlating acoustic emission (AE) data to the presence of normal zones in epoxy‐impregnated windings. The results suggest the feasibility of using AE sensors to determine whether or not a superconducting magnet has been driven normal after a rapid discharge. This AE diagnostic technique may be particularly valuable in application to pulse magnets.
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85.25.-j Superconducting devices
74.25.Sv Critical currents
46.80.+j Measurement methods and techniques in continuum mechanics of solids
43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products

Thermal effects of moderate substitutions of cobalt for iron in Fe76Pr16B8

R. A. Overfelt and J. J. Becker

Appl. Phys. Lett. 44, 925 (1984); http://dx.doi.org/10.1063/1.94936 (2 pages) | Cited 6 times

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We have explored the thermal effects of moderate substitutions of cobalt for iron in rapidly solidified, microcrystalline alloys of composition (Fe100−xCox)76Pr16B8, where x=0, 5, 10, 20, and 30. The maximum intrinsic coercivities were about 20 kOe and the saturation magnetizations were about 88 emu/g, both independent of cobalt content. A significant improvement in the Curie temperature of the hard phase is obtained with increasing cobalt content. A similar improvement in the reversible and irreversible temperature behavior is also observed as the cobalt content is increased.
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75.50.Vv High coercivity materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Cr Saturation moments and magnetic susceptibilities

Surface versus bulk magnetization curves in amorphous GdCo cosputtered in the presence of oxygen

H. C. Siegmann and E. Kay

Appl. Phys. Lett. 44, 927 (1984); http://dx.doi.org/10.1063/1.94937 (3 pages) | Cited 4 times

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Threshold photoemission and measurement of photoelectron spin polarization are used to investigate surface magnetism while avoiding radiation induced damage. By combining this technique with the measurement of longitudinal Kerr rotation, we show that the magnetic properties of these GdCo films are dominated by metallic Co in a Gd‐oxide matrix quite in contrast to findings reported by Togami and Kobayashi [Jpn. J. Appl. Phys. 20, 1457 (1981)]. Mild annealing leaves bulk magnetic properties unchanged but produces dramatic magnetic changes in the surface.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.50.Kj Amorphous and quasicrystalline magnetic materials
81.40.Rs Electrical and magnetic properties related to treatment conditions

Stabilization of n‐type silicon photoanodes against photoanodic decomposition with thin films of polyacetylene

Richard A. Simon and Mark S. Wrighton

Appl. Phys. Lett. 44, 930 (1984); http://dx.doi.org/10.1063/1.94938 (3 pages) | Cited 5 times

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Photoelectrochemical cells based on polyacetylene coated n‐Si photoanodes, n‐Si/(CH)x, in 11 M LiCl solutions containing I−3/I− have been investigated. The n‐Si/(CH)x photoanodes show a substantial improvement in durability compared to naked n‐Si photoanodes. The efficiency of these photoelectrochemical cells appears to be limited by a low observed quantum yield for electron flow due to absorption of light by the electrolyte solution and by the (CH)x film. Overall efficiency of 1.9% of the conversion of 632.8‐nm light (21 mW/cm2) can be sustained for >20 h without significant decline in efficiency. The n‐Si/(CH)x photoanode immersed in I−3/I− media behaves as a Schottky barrier or metal‐insulator‐semiconductor structure where the (CH)x can be viewed as having a variable work function depending on the extent of doping. decomposition with thin films of polyacetylene
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84.60.Jt Photoelectric conversion
73.40.Mr Semiconductor-electrolyte contacts
82.47.-a Applied electrochemistry
82.50.-m Photochemistry

Two‐frequency addressing of a cholesteric texture change electro‐optical effect

Paul R. Gerber

Appl. Phys. Lett. 44, 932 (1984); http://dx.doi.org/10.1063/1.94939 (3 pages) | Cited 3 times

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The Grandjean to focal conic texture change of cholesteric substances is examined by utilizing a two‐frequency addressable cholesteric material. Conditions for multiplexed addressing of this brilliant electro‐optical effect are studied. The storage property makes it suitable for application in displays of high information content. However, relatively high driving voltages, temperature sensitivity of driving conditions, and relatively slow response indicate possible indoor applications in displaying slowly changing information.
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78.20.Jq Electro-optical effects
61.30.-v Liquid crystals
85.60.Pg Display systems
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
FREE

Erratum: Coupled‐mode analysis of phase‐locked injection laser arrays [Appl. Phys. Lett. 44, 293 (1984)]

J. K. Butler, D. E. Ackley, and D. Botez

Appl. Phys. Lett. 44, 935 (1984); http://dx.doi.org/10.1063/1.94970 (1 page) | Cited 15 times

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Abstract Unavailable
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
99.10.Cd Errata
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