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15 Dec 1984

Volume 45, Issue 12, pp. 1257-1325

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Inverted‐V chirped phased arrays of gain‐guided GaAs/GaAlAs diode lasers

E. Kapon, C. P. Lindsey, J. S. Smith, S. Margalit, and A. Yariv

Appl. Phys. Lett. 45, 1257 (1984); http://dx.doi.org/10.1063/1.95117 (3 pages) | Cited 11 times

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Inverted‐V chirped arrays of multiple quantum well GaAs/GaAlAs lasers were grown by molecular beam epitaxy. These arrays consisted of seven gain‐guided lasers whose stripe widths decreased, from the central laser to the outermost ones, symmetrically. This structure makes it possible to discriminate against the higher order array supermodes, which results in diffraction limited beams with a single lobe directed perpendicular to the laser facet. Single lobed far‐field patterns, 3°–4° wide, were obtained from inverted‐V chirped arrays operated up to 1.5Ith. The supermode structure of these arrays was identified by studying their spectrally resolved near fields.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems
42.79.Gn Optical waveguides and couplers

Reduction of feedback‐induced noise by high‐reflectivity facet coating in single longitudinal mode semiconductor lasers

M. Kume, H. Shimizu, K. Itoh, G. Kano, and I. Teramoto

Appl. Phys. Lett. 45, 1260 (1984); http://dx.doi.org/10.1063/1.95118 (3 pages)

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The feedback‐induced noise in single longitudinal mode semiconductor lasers is suppressed over a wide range of feedback light intensity by high‐reflectivity facet coatings. A relative intensity noise value was as low as −140 dB/Hz under 1% optical feedback in the GaAlAs lasers with high‐reflective (0.75) facets.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.62.-b Laser applications

Temperature behavior of optical absorption in InGaAsP lasers

T. M. Shen and N. K. Dutta

Appl. Phys. Lett. 45, 1262 (1984); http://dx.doi.org/10.1063/1.95119 (3 pages)

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The temperature dependence of the optical absorption in InGaAsP laser emitting at 1.3 μm is studied by measuring the relaxation frequency as a function of output power at various temperatures. Our results show that the optical absorption does not vary significantly with increasing temperature. This suggests that the threshold carrier density in InGaAsP lasers is weakly temperature dependent compared to the threshold current density. Thus, the strong temperature dependence of threshold current in 1.3‐μm InGaAsP lasers is primarily due to the temperature dependence of the carrier lifetime at threshold. The shorter carrier lifetime (i.e., increased carrier loss) at high temperature can be due to Auger recombination.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optical bistability and chaos in a semiconductor laser with a saturable absorber

Hitoshi Kawaguchi

Appl. Phys. Lett. 45, 1264 (1984); http://dx.doi.org/10.1063/1.95120 (3 pages) | Cited 32 times

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Bistable operation and self‐sustained pulse oscillation in a semiconductor laser with inhomogeneous excitation are examined. These two characteristics are obtained by the control of the spatial distribution of carrier lifetime in the laser resonator. This laser, which is modulated by injection current, is predicted to have period‐doubling bifurcation, and provides a compact optical chaos emitter.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Optical hysteresis in fast transient experiments near the band gap of cadmium sulfide

M. Dagenais

Appl. Phys. Lett. 45, 1267 (1984); http://dx.doi.org/10.1063/1.95121 (3 pages) | Cited 6 times

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Calculations which include the effects of lattice heating on recent transient nanosecond experiments done near the band gap of cadmium sulfide at low temperatures are presented. For a detuning of 5.7 meV below the A free‐exciton resonance and for input intensities of about 1×107 W/cm2 large optical hysteresis in the transmitted power is predicted. Good agreement between our theoretical predictions based on lattice heating and the experimental results of Bohnert, Kalt, and Klingshirn [Appl. Phys. Lett. 43, 1088 (1983)] is obtained.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
71.35.-y Excitons and related phenomena
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Photon echo optical pulse compression

Y. S. Bai and T. W. Mossberg

Appl. Phys. Lett. 45, 1269 (1984); http://dx.doi.org/10.1063/1.95122 (3 pages) | Cited 9 times

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It is predicted that linearly chirped optical excitation pulses give rise to photon echoes whose shortness is limited only by the total material bandwidth that contributes to the echo signal. The photon echo process acts as a frequency‐dependent optical delay line whose dispersion is determined by the chirp rate of the excitation pulses rather than by their bandwidth. Consequently, long and short pulses can be compressed with equal facility without complicated alignment procedure. Accumulated echoes have similar properties and can be used with trains of weak excitation pulses.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
32.80.-t Photoionization and excitation
42.25.Bs Wave propagation, transmission and absorption

Heteroepitaxial ridge‐overgrown distributed feedback laser at 1.5 μm

W. T. Tsang, R. A. Logan, N. A. Olsson, L. F. Johnson, and C. H. Henry

Appl. Phys. Lett. 45, 1272 (1984); http://dx.doi.org/10.1063/1.95109 (3 pages) | Cited 4 times

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A new distributed feedback laser, the heteroepitaxial ridge‐overgrown distributed feedback (HRO DFB) laser, is proposed and demonstrated. The HRO DFB lasers operated in stable single longitudinal mode with no observable mode partition events under 2‐Gb/s pseudo‐random pulse modulation with dynamic spectral widths typically 0.5–2 Å even with both facets cleaved. Other characteristics of these 1.5‐μm GaInAsP HRO DFB lasers include ∼10 mW/facet (no antireflection coating) of stable beam, single longitudinal mode output power, and narrow lateral beam divergence of ∼12° (half‐power full width). Actual transmission experiments with dispersive fibers (17 ps/km nm) at ∼1.55 μm confirmed that the HRO DFB laser is an excellent ‘‘single‐frequency’’ optical source.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

GaInAsP/InP buried heterostructure formation by liquid phase epitaxy

R. A. Logan, H. Temkin, F. R. Merritt, and S. Mahajan

Appl. Phys. Lett. 45, 1275 (1984); http://dx.doi.org/10.1063/1.95110 (3 pages) | Cited 8 times

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Two‐step liquid phase epitaxy is shown to be impeded in the GaInAsP system by the difficulty of achieving uniform epitaxial wetting and highly radiative interfaces. This problem is most severe on the {111}In plane and could be due to a stochiometric disturbance at the etched surface due to unequal dissolution rates of the crystal components. Anodization etching to a depth between 430–860 Å removes this problem and permits reproducible formation of high quality epitaxial layers of InP on {111}In planes. The effectiveness of these cleaning procedures is demonstrated by the reproducible preparation of low threshold double channel planar buried heterostructure lasers.
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68.55.-a Thin film structure and morphology
42.55.Px Semiconductor lasers; laser diodes
81.65.-b Surface treatments
81.10.Dn Growth from solutions

InGaAsP/InP waveguide grating filters for λ=1.5 μm

R. C. Alferness, C. H. Joyner, M. D. Divino, and L. L. Buhl

Appl. Phys. Lett. 45, 1278 (1984); http://dx.doi.org/10.1063/1.95111 (3 pages) | Cited 9 times

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We report the first demonstration of InGaAsP/InP passive waveguide reflection grating filters. Waveguide filters with ∼1.5‐μm center wavelength, peak reflectivity >99%, and spectral bandwidths (full width at half‐maximum) as narrow as 6 Å and as broad as 130 Å have been achieved.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Dj Gratings
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

12‐fs ultrashort optical pulse compression at a high repetition rate

J.‐M. Halbout and D. Grischkowsky

Appl. Phys. Lett. 45, 1281 (1984); http://dx.doi.org/10.1063/1.95112 (3 pages) | Cited 34 times

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We have produced 12‐fs (full width at half‐maximum), 0.5‐MW optical pulses at a 500‐Hz repetition rate by passing the amplified pulses from a colliding pulse, passively mode‐locked ring dye laser through an optical fiber pulse compressor.
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42.60.Fc Modulation, tuning, and mode locking
42.81.-i Fiber optics
42.79.Hp Optical processors, correlators, and modulators

Proton spectra diagnostics for shock‐compression studies

D. R. Welch, D. B. Harris, A. H. Bennish, and G. H. Miley

Appl. Phys. Lett. 45, 1284 (1984); http://dx.doi.org/10.1063/1.95113 (3 pages)

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The energy spectra of fusion products escaping long‐pulse‐length laser‐imploded deuterium‐tritium filled glass microballoons have been measured with a time‐of‐flight spectrometer. The D(d,p)T reaction proton energy spectra showed two distinct peaks, indicating two burn phases in the target. The first burn phase is attributed to a spherically converging shock, while the second is attributed to subsequent compression heating. The analysis of these spectra provides the first conclusive proof of significant compression yields in these targets, where approximately half of the yield occurs during the compression burn phase.
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52.70.Nc Particle measurements
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Angular velocity spread of relativistic photoelectrons induced by excimer laser irradiation

M. Kawai, Y. Kawamura, and K. Toyoda

Appl. Phys. Lett. 45, 1287 (1984); http://dx.doi.org/10.1063/1.95114 (2 pages) | Cited 7 times

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The angular velocity spread of relativistic photoelectrons induced by a pulsed excimer laser was measured. The energy, the current density, and the pulse duration of the accelerated photoelectron were 0.34 MeV, 0.5 A/cm2, and 20 ns, respectively. (The method of measurement is based on measuring Larmor radius which corresponds to the transverse component of the electron velocity.) The angular velocity spread β⊥/β∥ was found to be less than 8×10−3, which means that the energy component due to β⊥ was as small as ≲17 eV.
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41.75.Fr Electron and positron beams
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
29.25.Bx Electron sources
29.27.Eg Beam handling; beam transport

Nanometer scale electron beam lithography in inorganic materials

I. G. Salisbury, R. S. Timsit, S. D. Berger, and C. J. Humphreys

Appl. Phys. Lett. 45, 1289 (1984); http://dx.doi.org/10.1063/1.95115 (3 pages) | Cited 38 times

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Nanometer scale holes and lines have been produced directly in calcium fluoride, aluminium oxide, and magnesium oxide by an intense beam of electrons. There is a threshold beam current density for drilling, and the variation of this with voltage has been studied. Observations using electron energy loss spectroscopy have confirmed that metallic aluminium is produced during the drilling of aluminium oxide. Aluminium oxide may be drilled when in contact with the aluminium substrate, which remains undrilled.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
79.20.Kz Other electron-impact emission phenomena

Transport studies of GaAs1−xSbx‐AlyGa1−yAs strained‐layer superlattices

H. P. Wei, M. J. Chou, D. C. Tsui, J. Klem, H. Morkoç, and R. J. Wagner

Appl. Phys. Lett. 45, 1292 (1984); http://dx.doi.org/10.1063/1.95116 (3 pages) | Cited 1 time

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Electrical transport in modulation‐doped GaAs1−xSbx‐AlyGa1−yAs strained‐layer superlattices (SLS) grown by molecular beam epitaxy was studied, using low field Hall measurements from 4.2 to 300 K, high field quantum transport, and the far‐infrared cyclotron resonance at 4.2 K. Our results show directly a degenerate two‐dimensional electron gas in the SLS with an effective mass m∗=0.063m0 and a mobility μ=7.7×103 cm2/Vs at a density ns =6.7×1011 cm−2, demonstrating the feasibility of high quality GaAs1−xSbx‐AlyGa1−yAs SLS with good two‐dimensional electronic transport properties despite the large lattice mismatch between the constituent layers.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Hot‐electron memory effect in double‐layered heterostructures

S. Luryi, A. Kastalsky, A. C. Gossard, and R. Hendel

Appl. Phys. Lett. 45, 1294 (1984); http://dx.doi.org/10.1063/1.95123 (3 pages) | Cited 11 times

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We studied a memory effect due to the real‐space hot‐electron transfer between two conducting GaAs layers separated by a graded AlGaAs barrier. Application of a lateral electric field to one of the layers enhances its electron temperature and leads to a charge injection into the other layer which is kept floating. As the heating voltage is removed, the injected electrons remain in the second layer, giving rise (at low temperatures, 77 K) to a persistent potential difference. Kinetics of the charge‐up process are studied at different heating voltages.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.30.Hi Surface barrier, boundary, and point contact devices

Electrical characterization of Fe‐doped semi‐insulating InP grown by metalorganic chemical vapor deposition

A. T. Macrander, J. A. Long, V. G. Riggs, A. F. Bloemeke, and W. D. Johnston

Appl. Phys. Lett. 45, 1297 (1984); http://dx.doi.org/10.1063/1.95124 (2 pages) | Cited 21 times

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The bulk resistivity of Fe‐doped metalorganic chemical vapor deposited grown epitaxial InP was determined from current‐voltage and capacitance measurements made on Schottky‐diode‐like devices. The current‐voltage data exhibit both an ohmic and a space‐charge‐limited regime, and the capacitance was found to be independent of applied bias. The electrical thickness was obtained from the capacitance using a relationship appropriate for current injection. Data for two samples representing both thin (∼1 μm) and thick (∼9 μm) epitaxial layers are presented. The resistivities were 6.5×107 Ω cm and 2.2×108 Ω cm.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.40.Fy Semiconductors

Applicability of the Meyer–Neldel rule to solar cells

Chandra Goradia and Victor G. Weizer

Appl. Phys. Lett. 45, 1298 (1984); http://dx.doi.org/10.1063/1.95125 (3 pages) | Cited 3 times

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A comparison of data taken on high quality silicon, GaAs, and GaInAs solar cells with those taken on a variety of homojunction, heterojunction, and metal‐insulator‐semiconductor devices indicates that while the Meyer–Neldel rule may be applicable to certain types of solar cells it is not applicable to well‐behaved, diffusion‐controlled homojunction devices. It cannot be used, therefore, as a universal rule to predict maximum achievable solar cell voltages.
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84.60.Jt Photoelectric conversion

Growth of undoped, high purity, high resistivity ZnSe layers by molecular beam epitaxy

Kiyoshi Yoneda, Yuji Hishida, Tadao Toda, Hiroaki Ishii, and Tatsuhiko Niina

Appl. Phys. Lett. 45, 1300 (1984); http://dx.doi.org/10.1063/1.95126 (3 pages) | Cited 32 times

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The growth of undoped, high purity ZnSe layers by molecular beam epitaxy with extremely high purity Se source materials refined by sublimation is described. The resistivity of these layers is greater than 104 Ω cm. In low‐temperature photoluminescence spectra, only free‐exciton emission line becomes dominant and all the bound exciton emission lines are extinguished, which is characteristic of very high purity ZnSe. Detailed behavior of electrical and optical properties of normally undoped layers is remarkably dependent on the purification cycles of Se materials used as source materials. The results indicate that the high resistivity of undoped, high purity ZnSe layers is due to a reduction of residual donor impurities.
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
78.40.Fy Semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Effect of doping level on the gain constant and modulation bandwidth of InGaAsP semiconductor lasers

C. B. Su and V. Lanzisera

Appl. Phys. Lett. 45, 1302 (1984); http://dx.doi.org/10.1063/1.95127 (3 pages) | Cited 16 times

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Using the threshold carrier density measurement technique, the differential gain dg/dn at lasing threshold was measured. It was found that the differential gain dg/dn of 1.3‐μm InGaAsP lasers is a strong function of the active layer doping level P0. At a doping level of 2.5×1018 cm−3, the differential gain is several times larger than at 4×1017 cm−3. A factor of 2 increase in the modulation bandwidth is demonstrated using the dg/dn dependency on P0.
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85.30.De Semiconductor-device characterization, design, and modeling
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

HgCdTe‐Cr interface chemistry

D. J. Peterman and A. Franciosi

Appl. Phys. Lett. 45, 1305 (1984); http://dx.doi.org/10.1063/1.95128 (2 pages) | Cited 16 times

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The microscopic interaction of Hg1−xCdxTe surfaces with refractory metals was examined through synchrotron radiation photoemission studies of HgCdTe cleaved in vacuum and of HgCdTe‐Cr junctions formed in situ. The results indicate that strong Te‐Cr interdiffusion is accompanied by rapid Hg depletion of the surface layer. In sharp contrast to similar studies of simple and noble metals on HgCdTe, variations in the surface anion‐to‐cation ratio and the Hg‐to‐Cd ratio do not affect the interface position of the Fermi level. The strongly inverted character of the near‐surface region found after cleaving appears to be preserved during the Hg‐Cr exchange reaction.
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81.65.-b Surface treatments
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
66.30.Ny Chemical interdiffusion; diffusion barriers

Molecular beam epitaxial growth of high quality HgTe and Hg1−xCdxTe onto GaAs(001) substrates

J. P. Faurie, S. Sivananthan, M. Boukerche, and J. Reno

Appl. Phys. Lett. 45, 1307 (1984); http://dx.doi.org/10.1063/1.95129 (3 pages) | Cited 19 times

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HgTe and Hg1−xCdxTe epilayers have been grown for the first time onto GaAs (001) substrates by molecular beam epitaxy (MBE). A thin MBE CdTe buffer has been first deposited. The (001) orientation of the substrate is conserved during the growth. Despite the important lattice mismatch in situ electron diffraction experiments showed that the films have a high crystal quality. Hall measurements carried out on these layers confirm their high quality because they exhibited high electron Hall mobilities. We have shown also, using a Hall mobility profiling etching technique, that the interfacial disorder zone in a HgCdTe layer deposited on a 0.4‐μm CdTe buffer layer could be less than 1 μm. This first report of very good electrical performances for Hg1−xCdxTe layers grown onto GaAs substrates is highly promising for growth and device applications regarding this material and related superlattices.
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68.55.-a Thin film structure and morphology
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Optical properties of GaAs on (100) Si using molecular beam epitaxy

W. T. Masselink, T. Henderson, J. Klem, R. Fischer, P. Pearah, H. Morkoç, M. Hafich, P. D. Wang, and G. Y. Robinson

Appl. Phys. Lett. 45, 1309 (1984); http://dx.doi.org/10.1063/1.95130 (3 pages) | Cited 47 times

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Undoped GaAs layers have been grown on (100) oriented Si by molecular beam epitaxy and have been studied using photoluminescence, photographic, and x‐ray measurements. To minimize antiphase disorder, an As primer layer was successfully used to initiate the polar on nonpolar growth. Photoluminescence spectra show the presence of five bands into which the luminescence from each sample falls. The energy variation within any given band was less than 4 meV. X‐ray and photoluminescence analysis appear to indicate some strain in the crystal. Although very preliminary, the results obtained indicate that GaAs on Si can potentially be used for a number of hybrid ciruits.
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75.20.Ck Nonmetals
68.55.-a Thin film structure and morphology
78.40.Fy Semiconductors

Fluorine‐enhanced thermal oxidation of silicon in the presence of NF3

M. Morita, T. Kubo, T. Ishihara, and M. Hirose

Appl. Phys. Lett. 45, 1312 (1984); http://dx.doi.org/10.1063/1.95131 (3 pages) | Cited 16 times

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The oxidation rate of silicon has been dramatically increased at temperatures between 600 and 800 °C by adding NF3 gas to a dry oxygen atmosphere. The chemical analysis of the resulting oxide has revealed that fluorine atoms in SiO2 are incorporated as Si–F bonds. The existence of such bonded‐fluorine atoms enhances the diffusion of oxidant through the oxide layer. The oxidation reaction rate in the SiO2‐Si interface is also remarkably increased because fluorine atoms in the interface create silicon dangling bonds and weakly positively charged silicon atoms as well. The kinetics of the fluorine‐enhanced oxidation has primarily been interpreted in terms of the Deal–Grove model.
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81.65.-b Surface treatments
68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films
68.60.-p Physical properties of thin films, nonelectronic

High‐speed modulation and switching with gain in a GaAlAs traveling‐wave optical amplifier

J. Hegarty and K. A. Jackson

Appl. Phys. Lett. 45, 1314 (1984); http://dx.doi.org/10.1063/1.95132 (3 pages) | Cited 6 times

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We demonstrate optical amplification of 10‐ps‐long pulses in a traveling‐wave type GaAs double heterostructure laser diode. A continuous train of mode‐locked pulses from a dye laser focused end on into the GaAs active region is amplified by a factor of 10 under injection by a synchronous train of current pulses and attenuated by a factor of 10 in the absence of current injection. This gives a switch/modulator with modulation depths of 100, overall gain, and measured switching speed of many GHz. A cw beam can be modulated at similar gains and speeds and since the device is capable of integration the performance of many optical functions without loss is possible.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
85.60.Dw Photodiodes; phototransistors; photoresistors

Field influence on deep level transients at large deep to shallow trap ratios

J. R. Morante, J. Samitier, A. Cornet, and A. Herms

Appl. Phys. Lett. 45, 1317 (1984); http://dx.doi.org/10.1063/1.95133 (3 pages) | Cited 15 times

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The differential capacitance method is used to determine the enhancement of thermal emission rates by electric field. The customary analysis is modified for large ratios of deep and shallow trap concentrations. Experimental results are given for the DX center in AlxGa1−xAs at x=0.55.
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79.70.+q Field emission, ionization, evaporation, and desorption
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.20.Hb Impurity and defect levels; energy states of adsorbed species
78.40.Fy Semiconductors
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