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1 Jul 1984

Volume 45, Issue 1, pp. 1-114

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GaAlAs buried multiquantum well lasers fabricated by diffusion‐induced disordering

Tadashi Fukuzawa, Shigeru Semura, Hiroshi Saito, Tsuneaki Ohta, Yoko Uchida, and Hisao Nakashima

Appl. Phys. Lett. 45, 1 (1984); http://dx.doi.org/10.1063/1.94988 (3 pages) | Cited 49 times

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A new transverse‐mode‐controlled laser called a buried multiquantum‐well (BMQW) laser has been developed. In order to make it possible to bury the MQW laser active region utilizing the diffusion‐induced disordering (DID) of GaAs‐GaAlAs MQW, zinc was selectively diffused into the MQW structure, resulting in a 3–8‐μm‐wide stripe region. The threshold current is as low as 33 mA with a 300‐μm cavity length and a fundamental transverse mode can be achieved. As a result of studying the relation of the waveguide geometry to the longitudinal and transverse modes it was concluded that this BMQW laser made by a simple DID process acts as an index‐guided laser.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
66.30.J- Diffusion of impurities
42.79.-e Optical elements, devices, and systems

Demagnified projection printing by a new x‐ray lithographic technique using no thin‐film masks

Hideki Matsumura and Takeshi Tanaka

Appl. Phys. Lett. 45, 3 (1984); http://dx.doi.org/10.1063/1.94997 (3 pages) | Cited 7 times

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A new x‐ray lithographic technique using no thin‐film pattern masks is presented. A pattern image is projected by utilizing the total reflection of the x ray from a pattern plate, in which a pattern picture is drawn on a thick and hard substrate. The projected image is geometrically demagnified by the sine of incident angle of the x ray. And we actually succeeded in obtaining the demagnified line and space patterns of 1.9‐μm width from the similar patterns of 210 μm by using copper Kα x ray.
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07.85.-m X- and γ-ray instruments
07.68.+m Photography, photographic instruments; xerography
81.65.-b Surface treatments
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Operation of an ICl fueled oxygen‐iodine chemical laser

C. E. Wiswall, H. V. Lilenfeld, and S. L. Bragg

Appl. Phys. Lett. 45, 5 (1984); http://dx.doi.org/10.1063/1.95010 (3 pages) | Cited 4 times

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cw operation of a chemical oxygen‐iodine laser (COIL) using ICl as a source of atomic iodine at powers approaching 120 W is reported. The vapor pressure of ICl is higher than the vapor pressure of the more conventional I2 fuel usually used in COIL. More iodine can therefore be delivered to the laser gas stream using ICl than can be delivered using I2. This concentration increase is advantageous for low‐temperature operation at high partial pressures of the atomic iodine source.
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42.55.Ks Chemical lasers

Use of high magnetic fields to estimate carrier leakage current in GaInAsP‐InP double heterostructure lasers

Yasuhiko Arakawa, Masao Nishioka, and Noboru Miura

Appl. Phys. Lett. 45, 7 (1984); http://dx.doi.org/10.1063/1.94976 (3 pages)

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We demonstrate a novel technique for estimating carrier leakage current in double heterostructure lasers. This utilizes the dependence of the carrier leakage motion on the high magnetic field directions. The carrier leakage current near threshold in GaInAsP‐InP lasers is estimated as a function of temperature from −25 to 65 °C. The result indicates that the T0 value is improved from 58 to about 77 °C by suppressing the leakage current.
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42.55.Px Semiconductor lasers; laser diodes

CO2 laser assisted UV ablative photoetching of Kapton films

Gad Koren

Appl. Phys. Lett. 45, 10 (1984); http://dx.doi.org/10.1063/1.95005 (3 pages) | Cited 28 times

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The radiation produced by focusing an intense CO2 laser pulse on a tungsten target under vacuum was used for the direct dry photoetching of Kapton films. Typical etch rates of about 0.5 μm/pulse and surface smoothness with nonuniformities of the order of 1 μm were obtained by the simultaneous focusing of radiation on the Kapton target from the laser produced plasma (∼1.5 J/cm2) and the 10.6‐μm scattered laser radiation (∼23 J/cm2). In contrast, no etching whatsoever was observed when the Kapton film was irradiated by each of the two sources separately (by the use of LiF and ZnSe filters) under the same experimental conditions. It is suggested that in the present experiment the extra energy absorbed by the Kapton film from the CO2 laser enables ablation of the UV sensitized layer close to the film’s surface.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Novel hybrid optically bistable switch: The quantum well self‐electro‐optic effect device

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus

Appl. Phys. Lett. 45, 13 (1984); http://dx.doi.org/10.1063/1.94985 (3 pages) | Cited 264 times

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We report a new type of optoelectronic device, a self‐electro‐optic effect device (SEED), which uses the same GaAs/GaAlAs multiple quantum well material simultaneously as an optical detector and modulator. Using a series resistor and constant voltage bias supply the SEED shows optical bistabilty (OB) of the recently discovered type which relies on increasing absorption and requires no mirrors. OB is seen at room temperature from ∼850–860 nm, at powers as low as 670 nW or switching times as short as 400 ns (limited only by power restrictions) with ∼1‐nJ optical switching energy in a 600‐μm‐diam device. Total energies per unit area (∼18 fJ/μm2) are substantially lower than any previously reported for OB.
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84.32.Dd Connectors, relays, and switches
42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects
85.60.Dw Photodiodes; phototransistors; photoresistors

Short wavelength (visible) GaAs quantum well lasers grown by molecular beam epitaxy

K. Woodbridge, P. Blood, E. D. Fletcher, and P. J. Hulyer

Appl. Phys. Lett. 45, 16 (1984); http://dx.doi.org/10.1063/1.94986 (3 pages) | Cited 16 times

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GaAs‐AlGaAs multiple quantum well (MQW) injection lasers with well widths from 55 to 13 Å have been grown by molecular beam epitaxy and operated at room temperature, showing emission at wavelengths down to 704 nm, the shortest reported for a MQW injection laser with GaAs wells. In a device with 25‐Å wells some evidence of coupling was apparent when barrier widths were reduced to 40 Å. For devices with 80‐Å barriers there is a difference of about 20 nm between the calculated n=1 (e–hh) transition wavelength and the lasing wavelength, whereas the calculation agrees with photovoltage absorption measurements on the same structures.
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42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Multiple waveguide lens

H. A. Haus, L. Molter‐Orr, and F. J. Leonberger

Appl. Phys. Lett. 45, 19 (1984); http://dx.doi.org/10.1063/1.94987 (3 pages) | Cited 11 times

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Coupled optical waveguide systems that transform coherent excitations of N waveguides into an excitation in a single waveguide are proposed. Such waveguide systems coupled to coherent laser diode arrays could function to combine the power from the individual laser elements to produce a single spot.
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42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators
42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors
42.82.-m Integrated optics

Circuit equivalent to the elastic spherical shell

Dov Hazony

Appl. Phys. Lett. 45, 22 (1984); http://dx.doi.org/10.1063/1.94989 (2 pages) | Cited 1 time

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The pulsating elastic spherical shell is investigated in detail. A possible equivalent circuit is shown to contain two capacitors, two inductors, a transmission line, and an ideal transformer.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
47.10.-g General theory in fluid dynamics

Local thermodynamic equilibrium in free‐burning arcs in argon

A. J. D. Farmer and G. N. Haddad

Appl. Phys. Lett. 45, 24 (1984); http://dx.doi.org/10.1063/1.94990 (2 pages) | Cited 23 times

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Measurements of normalized radial emission coefficients in a free‐burning arc in argon are presented as a function of position in the arc. The variation of these emission coefficients with pressure indicates departures from local thermodynamic equilibrium at 1‐atm pressure.
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51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
52.80.Mg Arcs; sparks; lightning; atmospheric electricity

Experimental tests of a moving foil as a high current vacuum opening switch

D. R. Kania, E. L. Zimmermann, R. J. Trainor, L. R. Veeser, and L. A. Jones

Appl. Phys. Lett. 45, 26 (1984); http://dx.doi.org/10.1063/1.94991 (3 pages) | Cited 1 time

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We report on the first experimental investigation of the use of a magnetically accelerated foil—moving foil—as a vacuum opening switch. One megampere, 60% of the total current, was transferred to a low inductance path in 800 ns.
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84.32.Dd Connectors, relays, and switches
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
85.70.-w Magnetic devices
52.75.Hn Plasma torches

Spatial concentrations of silicon atoms by laser‐induced fluorescence in a silane glow discharge

R. M. Roth, K. G. Spears, and G. Wong

Appl. Phys. Lett. 45, 28 (1984); http://dx.doi.org/10.1063/1.94992 (3 pages) | Cited 44 times

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A capacitively coupled, rf glow discharge of silane in argon was studied to determine the spatial concentration of silicon atoms. Laser‐induced fluorescence was used to determine the ground state concentration profiles. The fluorescence profiles clearly show the sharp boundaries of the sheath regions. These profiles were much more sensitive to plasma chemistry changes than profiles obtained from plasma emission. Experiments with nitrogen addition demonstrated significant changes in the silicon atom profiles near the sheath boundary.
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52.80.Hc Glow; corona
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)

Modeling of plasma devices for pulsed power

Joseph A. Kunc and Martin A. Gundersen

Appl. Phys. Lett. 45, 31 (1984); http://dx.doi.org/10.1063/1.94993 (3 pages) | Cited 1 time

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This letter considers quantitative models of microscopic processes in plasmas formed in gas phase devices for pulsed power. Although models have been developed for devices such as lasers, there are others, such as switches, where these processes have been treated only phenomenologically. Further, transport data must be adjusted to include the effects of high electron density. It is shown that it is necessary to use a microscopic model to correctly describe the device behavior. Examples presented include the effect of Coulomb collisions on conductivity in various gases, and the ionization processes in a hydrogen thyratron.
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52.75.Kq Plasma switches (e.g., spark gaps)
52.80.-s Electric discharges
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
52.25.Fi Transport properties

Localized plasma‐density disturbance propagating along B in the interior of the ZT‐40M reversed‐field pinch

Gianfranco Nalesso and Abram R. Jacobson

Appl. Phys. Lett. 45, 34 (1984); http://dx.doi.org/10.1063/1.94994 (3 pages) | Cited 1 time

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Using a ten‐chord interferometer, we have measured a field‐aligned (k∥≊2 m−1; k⊥≳25 m−1) plasma‐density disturbance propagating along B with a speed in the ion acoustic range. The propagation is purely in the electron drift direction and is observed only when the drift parameter (electron drift speed/electron thermal speed)≳0.1. A novel spatial‐filter technique resolves this localized mode, which otherwise would be hidden by more robust global disturbances present along the lines of sight.
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52.35.Dm Sound waves
52.35.Bj Magnetohydrodynamic waves (e.g., Alfven waves)
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.55.Ez Theta pinch

Direct evidence for the role of gold migration in the formation of dark‐spot defects in 1.3‐μm InP/InGaAsP light‐emitting diodes

A. K. Chin, C. L. Zipfel, M. Geva, I. Camlibel, P. Skeath, and B. H. Chin

Appl. Phys. Lett. 45, 37 (1984); http://dx.doi.org/10.1063/1.94995 (3 pages) | Cited 13 times

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The results of our previous study of dark‐spot defects (DSD’s) in aged 1.3‐μm InP/InGaAsP light‐emitting diodes (LED’s) have strongly suggested that the defects form as a result of the migration of gold from the p contact into various epitaxial layers. To provide further support for this degradation mechanism, we compare, in this study, the formation of DSD’s in LED’s fabricated with the usual BeAu p metallization and a new platinum p contact. After accelerated aging (200 °C junction temperature, 20 kA/cm2, 3×103 h), DSD’s were observed only in the devices with BeAu contacts, thus directly identifying the active role of gold migration in DSD formation.
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81.40.Gh Other heat and thermomechanical treatments
61.72.-y Defects and impurities in crystals; microstructure
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices

Optical recording in hydrogenated amorphous silicon

P. John and B. L. Jones

Appl. Phys. Lett. 45, 39 (1984); http://dx.doi.org/10.1063/1.94996 (3 pages) | Cited 1 time

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An archival optical storage technique based on hydrogen evolution in hydrogenated amorphous silicon (a‐Si:H) is presented. Thin films (∼0.5 μm) of a‐Si:H have been prepared by rf glow discharge in SiH4 and deposited on a thermally grown oxide pattern formed on float zone 〈111〉 crystalline Si (c‐Si) substrates. Replication of the oxide pattern is achieved by ablation of the a‐Si:H layer after annealing. This low‐temperature process produces a predesigned array of circular holes caused by bursting of microbubbles in the a‐Si:H layer. In comparison, the circular holes nucleate randomly on unoxidized c‐Si.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
07.05.Hd Data acquisition: hardware and software
07.05.Kf Data analysis: algorithms and implementation; data management
07.05.Rm Data presentation and visualization: algorithms and implementation

Ni‐Si(111) interface: Growth of Ni2Si islands at room temperature

E. J. van Loenen, J. W. M. Frenken, and J. F. van der Veen

Appl. Phys. Lett. 45, 41 (1984); http://dx.doi.org/10.1063/1.94998 (3 pages) | Cited 34 times

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Ultrathin films (0–20 Å) of Ni have been deposited on atomically clean Si(111) surfaces at room temperature. The composition and morphology of the films have been determined, employing the high depth resolution obtainable in medium energy ion scattering. Disordered Ni2Si islands are formed, which grow laterally and in thickness with increasing Ni coverage. The silicide formation ends when the islands coalesce into a continuous film, at a Ni coverage of ≊8×1015 Ni atoms/cm2. During the silicide growth, the surfaces of the islands are rich in Si.
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68.55.-a Thin film structure and morphology

Graphoepitaxial alignment of KCl crystallites in the presence of water vapor

Toshio Kobayashi and Kazumasa Takagi

Appl. Phys. Lett. 45, 44 (1984); http://dx.doi.org/10.1063/1.94999 (3 pages) | Cited 8 times

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The graphoepitaxy of KCl was investigated through depositing the KCl film on a Si substrate having square‐wave grating by means of vacuum evaporation, and then exposing the film to water vapor. The deposited crystallites grew to become rectangular parallelepipeds 3–4 μm in diameter because of the water adsorbed on the surface. During the growth, crystallite orientation was aligned along the grating by the effect of the groove walls. A well‐aligned in‐plane orientation was obtained when the groove width of the grating was kept smaller than the width of the grown crystallite and when the groove depth was close to the crystallite’s height.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.55.-a Thin film structure and morphology
68.03.Cd Surface tension and related phenomena
68.03.Fg Evaporation and condensation of liquids

Photoluminescence from rapid thermal annealed and pulsed‐laser‐annealed, ion‐implanted Si

J. Wagner, J. C. Gelpey, and R. T. Hodgson

Appl. Phys. Lett. 45, 47 (1984); http://dx.doi.org/10.1063/1.95000 (3 pages) | Cited 14 times

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Low‐temperature photoluminescence studies of ion‐implanted and rapid thermal annealed or pulsed‐laser‐annealed Si are reported. The samples were implanted with As, P, Sb, or B. The luminescence spectra of the pulsed‐laser‐annealed samples show strong sharp luminescence lines from radiation induced defects, whereas in samples implanted with As, P, or B and rapidly annealed with an arc lamp a very clean spectrum without any defect luminescence is observed. This indicates a very low defect concentration in the lamp annealed material. In Sb‐implanted lamp‐annealed samples, however, a broad defect luminescence band appears as the temperature is raised and which varies in shape as a function of the annealing temperature. This band is probably due to Sb agglomerates.
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81.40.Tv Optical and dielectric properties related to treatment conditions
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Ds Laser-beam impact phenomena

Annealing behavior of light‐induced defects in hydrogenated amorphous silicon alloys

S. Guha, C. ‐Y. Huang, and S. J. Hudgens

Appl. Phys. Lett. 45, 50 (1984); http://dx.doi.org/10.1063/1.95001 (2 pages) | Cited 10 times

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We have studied the annealing behavior of light‐induced changes in room‐temperature photoconductivity and density of states at the Fermi level of hydrogenated amorphous silicon alloys for light soaking at temperatures between 100 to 400 K. Defects created at higher temperatures are found to be more difficult to anneal out. The results are discussed on the basis of the existing models for light‐induced effect.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.80.-x Physical radiation effects, radiation damage
72.40.+w Photoconduction and photovoltaic effects
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Use of transient capacitance measurements for direct determination of minority‐carrier lifetime in low‐doped metal‐oxide‐semiconductor structures

U. Efron and P. O. Braatz

Appl. Phys. Lett. 45, 52 (1984); http://dx.doi.org/10.1063/1.95008 (2 pages)

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A new method for the direct determination of minority‐carrier lifetime is presented, which utilizes transient capacitance measurements performed with varying depletion voltages on metal‐oxide‐semiconductor (MOS) structures. It is shown that the slope of the fill (storage) time versus the depletion voltage is directly proportional to the minority‐carrier lifetime. Good agreement is shown between results obtained with the proposed method and those obtained using a standard technique. The method is limited, however, to low‐doped MOS structures which can be depleted to the back contact.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
07.50.-e Electrical and electronic instruments and components

Femtosecond studies of intraband relaxation in GaAs, AlGaAs, and GaAs/AlGaAs multiple quantum well structures

D. J. Erskine, A. J. Taylor, and C. L. Tang

Appl. Phys. Lett. 45, 54 (1984); http://dx.doi.org/10.1063/1.94984 (3 pages) | Cited 47 times

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Show Abstract
Femtosecond intraband relaxation dynamics of hot carriers in highly excited states of GaAs, AlGaAs, and AlGaAs/GaAs multiple quantum well (MQW) structures are studied at room temperature using the equal‐pulse correlation technique. Initial carrier lifetimes of 35, 60, and 50 fs are measured for GaAs, Al0.32Ga0.68As, and MQW structures for excitation with 2.02‐eV photons at low carrier densities, and are in reasonable agreement with calculated scattering rates. The carrier‐density dependence of these lifetimes is measured for densities in the range 1.5×1017–5×1019 cm−3.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects

Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantation

C. G. Tuppen, M. R. Taylor, P. L. F. Hemment, and R. P. Arrowsmith

Appl. Phys. Lett. 45, 57 (1984); http://dx.doi.org/10.1063/1.95009 (3 pages) | Cited 40 times

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The effects of implantation temperature (Ti) on the chemical and physical structure of annealed high‐dose oxygen ion implanted layers were investigated by Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). At low Ti (∼400 °C) the buried oxide is bordered by layers of polycrystalline silicon (polysilicon) which, in the top silicon layer, is separated from damaged single crystal Si by a thin band of discontinuous oxide. These polysilicon layers are formed from amorphous regions during high‐temperature anneals. At high Ti (∼500 °C) polysilicon was not observed.
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61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.50.Lt Crystal binding; cohesive energy
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Luminescence of carbon and oxygen related complexes in annealed silicon

N. Magnea, A. Lazrak, and J. L. Pautrat

Appl. Phys. Lett. 45, 60 (1984); http://dx.doi.org/10.1063/1.95011 (3 pages) | Cited 27 times

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Efficient radiative defects are introduced in silicon by annealing at 450 °C. They are associated with very sharp and intense transitions at 0.926 eV (H line) and at 0.767 eV (P line). A close correlation has been established between the intensity of these lines and the oxygen content of the sample. The carbon content correlates also with the line H. It is shown that the radiation induced lines at 0.79 eV (C line) and at 0.97 eV (G line) are similarly influenced by the oxygen and carbon content. Although the detailed nature of the centers responsible for H and P lines is not known it can be put forward that their formation is controlled by Oi migration, and that the center leading to H must be similar to the G center (CSi–Sii−CSi).
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78.40.Fy Semiconductors
78.30.Er Solid metals and alloys
78.40.Kc Metals, semimetals, and alloys
61.80.-x Physical radiation effects, radiation damage
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Ribbon‐to‐ribbon float zone single crystal growth stabilized by a thin silicon dioxide skin

Eli Yablonovitch and Tom Gmitter

Appl. Phys. Lett. 45, 63 (1984); http://dx.doi.org/10.1063/1.95012 (3 pages) | Cited 2 times

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We have found that a thin silicon dioxide skin stabilizes the float zone in ribbon‐to‐ribbon single crystal growth. 40‐μm‐thick single crystal ribbons, oriented 〈100〉 and scanned in the 〈011〉 direction, were grown completely free of subgrain as well as grain boundaries. This surprising suppression of low angle grain boundaries may be related to a similar effect which has been seen in supported thick silicon on SiO2 films.
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81.10.Fq Growth from melts; zone melting and refining
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
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