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15 Nov 1984

Volume 45, Issue 10, pp. 1005-1152

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Fiber‐optic laser Doppler velocimeter using an external‐cavity semiconductor laser

Kazuo Kyuma, Shuichi Tai, Masahiro Nunoshita, and Takashi Nakayama

Appl. Phys. Lett. 45, 1005 (1984); http://dx.doi.org/10.1063/1.95059 (2 pages) | Cited 7 times

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Influence of the spectral linewidth Δν of a semiconductor laser on the performance of a fiber‐optic laser Doppler velocimeter (FLDV) was investigated. By using an external‐cavity laser with Δν≂0.3 MHz, we could build a FLDV having an optical fiber probe length up to 25 m long.
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42.62.-b Laser applications
42.81.-i Fiber optics
06.30.Gv Velocity, acceleration, and rotation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optical fiber hydrogen sensor

M. A. Butler

Appl. Phys. Lett. 45, 1007 (1984); http://dx.doi.org/10.1063/1.95060 (3 pages) | Cited 39 times

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A new type of hydrogen sensor is reported in which an optical fiber is used as the sensing element. The fiber is coated with palladium which expands on exposure to hydrogen. This changes the effective optical path length of the fiber, which is detected by interferometric techniques. Preliminary experiments have demonstrated the effect and suggest a high sensitivity and a wide dynamic range for this kind of sensor. The experimental results are compared to calculated optical path length changes. Application of this kind of sensor to the detection of other chemicals appears feasible.
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42.81.-i Fiber optics
82.80.-d Chemical analysis and related physical methods of analysis
07.60.Ly Interferometers
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Experimental analysis of a chemical oxygen‐iodine laser

J. Bonnet, D. David, E. Georges, B. Leporcq, D. Pigache, and C. Verdier

Appl. Phys. Lett. 45, 1009 (1984); http://dx.doi.org/10.1063/1.95061 (3 pages) | Cited 11 times

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A small scale chemical oxygen‐iodine laser is described. The maximum extracted cw laser power is 4 W. Water vapor and molecular iodine concentration measurements are presented in addition to the more usual fluorescence measurements. The effects of water vapor on the extracted laser power, on the dissociation of iodine, and on the quenching of the O2 1Δ–I 2P1/2 system, are observed. It is shown that a relatively large amount of water vapor can be tolerated. An interesting practical consequence is the possibility of lasing at the same power level with less dangerous 30% H2O2 instead of the highly concentrated H2O2 used in previous studies.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.55.Ks Chemical lasers
42.60.By Design of specific laser systems
33.50.-j Fluorescence and phosphorescence; radiationless transitions, quenching (intersystem crossing, internal conversion)

Phase‐locked, index‐guided multiple‐stripe lasers with large refractive index differences

I. Suemune, T. Terashige, and M. Yamanishi

Appl. Phys. Lett. 45, 1011 (1984); http://dx.doi.org/10.1063/1.95062 (3 pages) | Cited 1 time

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Phase‐locked operation of multiple‐stripe lasers with refractive index differences on the order of 10−2 is reported. The higher order modes of each stripe are suppressed by the coherent coupling among the stripes, and the fundamental modes are selectively excited by the phase‐locked operation. The light‐current characteristics were linear up to 250‐mW light output.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Fc Modulation, tuning, and mode locking

Demonstration of nonlinear prism coupling

J. D. Valera, C. T. Seaton, G. I. Stegeman, R. L. Shoemaker, Xu Mai, and C. Liao

Appl. Phys. Lett. 45, 1013 (1984); http://dx.doi.org/10.1063/1.95063 (3 pages) | Cited 29 times

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The coupling of light into a waveguide characterized by an intensity dependent propagation constant has been demonstrated experimentally. Limiting action was observed at milliwatt waveguide powers with a liquid crystal medium filling the gap between a prism and a glass waveguide.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.79.Bh Lenses, prisms and mirrors
42.79.Fm Reflectors, beam splitters, and deflectors

Optical bistability and hysteresis with a photorefractive self‐pumped phase conjugate mirror

Sze‐Keung Kwong, Mark Cronin‐Golomb, and Amnon Yariv

Appl. Phys. Lett. 45, 1016 (1984); http://dx.doi.org/10.1063/1.95046 (3 pages) | Cited 26 times

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Bistability and hysteresis have been observed in a photorefractive passive phase conjugate mirror. A threshold basis for the effect is presented and the results of an experimental demonstration of the device are given.
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42.65.-k Nonlinear optics
42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors

Second harmonic generation in reflection from crystalline GaAs under intense picosecond laser irradiation

A. M. Malvezzi, J. M. Liu, and N. Bloembergen

Appl. Phys. Lett. 45, 1019 (1984); http://dx.doi.org/10.1063/1.95047 (3 pages) | Cited 12 times

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The emission of second harmonic radiation in reflection from crystalline GaAs irradiated with 20‐ps, 530‐nm laser pulses has been measured for incident laser fluences far exceeding the threshold fluence Fth for permanent reflectivity changes. The results are consistent with the occurrence of surface melting during the laser pulse. Detailed analysis of the second harmonic signals reveals an upper limit of 2 ps for the structural transition associated with the melting of the surface.
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79.20.Ds Laser-beam impact phenomena
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
64.70.K- Solid-solid transitions

A new, highly multiplexable liquid crystal display

T. J. Scheffer and J. Nehring

Appl. Phys. Lett. 45, 1021 (1984); http://dx.doi.org/10.1063/1.95048 (3 pages) | Cited 173 times

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A new, highly multiplexable liquid crystal display is described, which has a superior image quality than a twisted nematic display multiplexed at the same high level. The display cell consists of a chiral‐doped nematic layer with tilted boundaries and a twist angle of ∼270°. It operates in a birefringent optical mode between two ‘‘nonconventionally’’ oriented polarizers. Performance characteristics presented for a 120×240 dot matrix panel multiplexed at a 1/120 duty cycle include driving voltages compatible with complementary‐metal‐oxide‐semiconductor technology, 300‐ms response times, a contrast ratio of 10:1 at normal incidence, and ≥4:1 inside a viewing cone of 45° from the vertical.
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07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.
85.60.Pg Display systems
61.30.-v Liquid crystals
78.20.Jq Electro-optical effects

Temperature behavior of optical absorption in InGaAsP lasers

N. K. Dutta, N. A. Olsson, and T. M. Shen

Appl. Phys. Lett. 45, 1023 (1984); http://dx.doi.org/10.1063/1.95049 (3 pages)

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We have investigated the temperature dependence of the optical absorption in InGaAsP lasers emitting at 1.57 μm by measuring the resonant frequency as a function of output power at various temperatures. The results obtained using this technique are not influenced by leakage currents which can reduce the measured external differential quantum efficiency in some device structures. Our results show that the optical absorption does not vary significantly with increasing temperature which suggests that the threshold carrier density in 1.57‐μm InGaAsP lasers is weakly temperature dependent. The latter is consistent with our recent measurement of threshold current using short electrical pulses where T0∼170 K was observed. Thus, the strong temperature dependence of threshold current of InGaAsP lasers is primarily due to the temperature dependence of the carrier lifetime at threshold. The shorter carrier lifetime (i.e., increased carrier loss) at high temperature can be due to Auger recombination.
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42.55.Px Semiconductor lasers; laser diodes
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

A new high‐power, narrow‐beam transverse‐mode stabilized semiconductor laser at 1.5 μm: the heteroepitaxial ridge‐overgrown laser

W. T. Tsang and R. A. Logan

Appl. Phys. Lett. 45, 1025 (1984); http://dx.doi.org/10.1063/1.95050 (3 pages) | Cited 4 times

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We proposed and demonstrated the operation of a new laser structure: the heteroepitaxial ridge‐overgrown (HRO) laser. The laser growth involves two epitaxial growths with ridge overgrowths through an oxide defined stripe to form the strip loaded waveguide of the laser with automatic alignment of the current confinement through the stripe. Characteristics of the 1.5‐μm wavelength GaInAsP HRO lasers include high output powers of ∼50 mW/facet under pulsed operation and narrow beam divergence of ∼12° (half‐power full width) operating in the fundamental transverse mode in the junction plane. The light‐current characteristic is linear up to ∼30 mW/facet. The current threshold is as low as 70 mA. The external differential quantum efficiencies from both facets are 25%–35%. Because no reverse‐biased pn junction was used for current injection confinement, very fast optical pulse response of 160 ps (half‐power full width, detection limited) was obtained.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes

High reflectivity GaAs‐AlGaAs mirrors fabricated by metalorganic chemical vapor deposition

R. L. Thornton, R. D. Burnham, and W. Streifer

Appl. Phys. Lett. 45, 1028 (1984); http://dx.doi.org/10.1063/1.95051 (3 pages) | Cited 18 times

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We demonstrate the ability to grow optically reflective structures epitaxially on a GaAs substrate using the metalorganic chemical vapor deposition growth technique. This has been accomplished by depositing alternating quarter‐wavelength layers of GaAs and (AlGa)As. By growing such structures with up to 80 total layers, we have produced near perfect (100% reflectivity) mirrors that are design wavelength selectable over a wide range. A theoretical calculation is presented which demonstrates the ability of these films to be grown with a wide range of reflectivities over a wide range of material compositions.
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42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors
75.20.Ck Nonmetals

Microsecond room‐temperature optical bistability and crosstalk studies in ZnS and ZnSe interference filters with visible light and milliwatt powers

G. R. Olbright, N. Peyghambarian, H. M. Gibbs, H. A. Macleod, and F. Van Milligen

Appl. Phys. Lett. 45, 1031 (1984); http://dx.doi.org/10.1063/1.95052 (3 pages) | Cited 54 times

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ZnS and ZnSe interference filters exhibit fast switch‐on times (10 and 50 μs, respectively) with milliwatt powers at room temperature. The nonlinearity in the refractive index is found to result from heating by absorption. Crosstalk between two light beams is negligible for separations exceeding 20 μm with 7.7‐μm beam diameters.
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75.20.Ck Nonmetals
42.79.Ci Filters, zone plates, and polarizers
42.65.-k Nonlinear optics
77.55.-g Dielectric thin films

Intermodulation distortion in a directly modulated semiconductor injection laser

K. Y. Lau and A. Yariv

Appl. Phys. Lett. 45, 1034 (1984); http://dx.doi.org/10.1063/1.95053 (3 pages) | Cited 29 times

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A most important quantity in high‐frequency analog transmission is the intermodulation distortion product. Experimental studies of the third order intermodulation distortion products in the modulation response of high‐speed semiconductor lasers give very low values (<−60 dB) at low frequencies, an increase at a rate of 40 dB/dec as the modulation frequency is increased, and a leveling off at one‐half of the relaxation oscillation resonance frequency. These experimental results can be well explained by a theory based on a perturbative analysis of laser dynamics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Real‐time photoacoustic microscopy

R. S. Quimby

Appl. Phys. Lett. 45, 1037 (1984); http://dx.doi.org/10.1063/1.95054 (3 pages) | Cited 13 times

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A new technique in photoacoustic microscopy is described in which a line scan photoacoustic image is displayed directly on an oscilloscope screen and can be observed to change in real time. The new method differs from conventional photoacoustic microscopy in that the beam position is modulated rather than the beam intensity, so that the spatial distribution of sample defects is mapped into the time domain. The result is a photoacoustic line scan image quite similar to that obtained in the conventional way, but acquired in a time measured in milliseconds rather than minutes.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)
81.70.-q Methods of materials testing and analysis
42.60.Fc Modulation, tuning, and mode locking
07.60.Pb Conventional optical microscopes

Measurement of small elastic anisotropy in solids using laser‐induced ultrasonic pulses

A. C. Tam and W. P. Leung

Appl. Phys. Lett. 45, 1040 (1984); http://dx.doi.org/10.1063/1.95055 (3 pages) | Cited 9 times

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Nondestructive laser‐induced short ultrasonic pulse generation (duration ≊10 ns) together with broadband detection is used to detect and measure the small elastic anisotropy in opaque solids quickly and precisely. This is demonstrated for an extruded aluminum alloy type 6061‐T6. A single laser‐induced acoustic pulse propagation measurement over a path length of 47 mm provides a longitudinal ultrasonic velocity measurement accuracy of 0.02%. The longitudinal velocities at ±45° from the extruding direction Z are found to be 2% larger than the velocity along Z, indicating that most of the aluminum crystallites are oriented with a principal axis parallel to Z. Thermal annealing of the sample results in a small increase in ultrasonic veolcity in all directions with the observed acoustic anisotropy remaining essentially unchanged.
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43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
62.65.+k Acoustical properties of solids
81.70.-q Methods of materials testing and analysis
43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products

Current distribution in a plasma erosion opening switch

B. V. Weber, R. J. Commisso, R. A. Meger, J. M. Neri, W. F. Oliphant, and P. F. Ottinger

Appl. Phys. Lett. 45, 1043 (1984); http://dx.doi.org/10.1063/1.95056 (3 pages) | Cited 46 times

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The current distribution in a plasma erosion opening switch is determined from magnetic field probe data. During the closed state of the switch the current channel broadens rapidly. The width of the current channel is consistent with a bipolar current density limit imposed by the ion flux to the cathode. The effective resistivity of the current channel is anomalously large. Current is diverted to the load when a gap opens near the cathode side of the switch. The observed gap opening can be explained by erosion of the plasma. Magnetic pressure is insufficient to open the gap.
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52.75.Kq Plasma switches (e.g., spark gaps)
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
52.80.Vp Discharge in vacuum

Ablation scaling in steady‐state ablation dominated by inverse‐bremsstrahlung absorption

A. Ng, D. Pasini, P. Celliers, D. Parfeniuk, L. Da Silva, and J. Kwan

Appl. Phys. Lett. 45, 1046 (1984); http://dx.doi.org/10.1063/1.95057 (3 pages) | Cited 31 times

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The dependence of mass ablation rate and ablation pressure on laser wavelength and intensity have been measured for planar aluminum targets irradiated with 0.27‐, 0.35‐, and 0.53‐μm laser pulses of 2‐ns full width at half‐maximum and at irradiances of 1012–5×1013 W/cm2. Target absorption is dominated by inverse bremsstrahlung and the ablative flow is steady state. The results show good agreement with theory modified by the steepening of the plasma density gradient for decreasing laser wavelength.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Characteristics of compressional shocks resulting from picosecond heating of confined foils

P. E. Schoen and A. J. Campillo

Appl. Phys. Lett. 45, 1049 (1984); http://dx.doi.org/10.1063/1.95058 (3 pages) | Cited 18 times

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Multikilobar shocks were generated in thin foils of copper using picosecond duration 1.054‐μm laser pulses (1–10 J/cm2) to create plasmas in the region between the front surface and an overlying glass window. Michelson interferometry was used to optically probe the particle velocity history of the rear foil surface, from which the magnitude and temporal profile of the shock pressure were deduced. The pressure dependence on fluence was observed to be linear and the temporal profile of the wave has a rapid rise and a tail which followed a t−1/2 dependence, consistent with a simple model.
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62.50.-p High-pressure effects in solids and liquids
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.50.Lp Plasma production and heating by shock waves and compression

Formation and growth of amorphous phases by solid‐state reaction in elemental composites prepared by cold working

Michael Atzmon, John D. Verhoeven, Edwin D. Gibson, and W. L. Johnson

Appl. Phys. Lett. 45, 1052 (1984); http://dx.doi.org/10.1063/1.95064 (2 pages) | Cited 66 times

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Amorphous alloys of Ni‐Zr and Cu‐Zr have been synthesized by solid‐state reaction of composite metal mixtures produced by mechanical deformation of metal powder mixtures and intercalated foil layers. The materials obtained were investigated by means of x‐ray diffraction and differential scanning calorimetry. The results are compared with known data for thin films and rapidly quenched alloys.
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81.05.Kf Glasses (including metallic glasses)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.05.Bx Metals, semimetals, and alloys
66.30.Ny Chemical interdiffusion; diffusion barriers

Thermomigration in indium films

G. J. van Gurp, P. J. de Waard, and F. J. du Chatenier

Appl. Phys. Lett. 45, 1054 (1984); http://dx.doi.org/10.1063/1.95065 (3 pages) | Cited 1 time

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Thermomigration in indium films of thickness 0.5–3 μm was studied between 94 and 145 °C in a scanning electron microscope, using a 10‐μm‐wide Mo heater underneath the In. Transport was from hot to cold. The amount of transported In was determined by measuring the size of the holes appearing in the In above the heater. The activation energy is 0.8 eV. The transport starts after an incubation time and is faster for thinner films, probably because of grain boundary diffusion.
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66.30.Fq Self-diffusion in metals, semimetals, and alloys
68.60.-p Physical properties of thin films, nonelectronic
65.90.+i Other topics in thermal properties of condensed matter (restricted to new topics in section 65)

Structural and electrical properties of BF+2 implanted, rapid annealed silicon

M. E. Lunnon, J. T. Chen, and J. E. Baker

Appl. Phys. Lett. 45, 1056 (1984); http://dx.doi.org/10.1063/1.95066 (3 pages) | Cited 7 times

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A comparison has been made between ion implantation damage, implanted impurity profiles, and the dopant electrical characteristics in silicon implanted with boron fluoride and rapid annealed. The rapid anneal is accompanied by outdiffusion of fluorine except in regions containing residual implantation damage in the form of dislocation loops. During the anneal the boron dopant becomes electrically activated.
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61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Rs Electrical and magnetic properties related to treatment conditions
61.80.Jh Ion radiation effects

Enhanced Raman scattering from cesium suboxides on silver particles and the structure of S‐1 photocathodes

C. W. Bates

Appl. Phys. Lett. 45, 1058 (1984); http://dx.doi.org/10.1063/1.95067 (2 pages) | Cited 4 times

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Recent enhanced Raman scattering studies of cesium suboxides in S‐1 photocathodes have indicated the presence of Cs11O3 but not Cs2O. The reason for the discrepancy between the currently accepted model of the S‐1 and this recent result is discussed.
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78.30.Hv Other nonmetallic inorganics
85.60.Ha Photomultipliers; phototubes and photocathodes
33.20.Fb Raman and Rayleigh spectra (including optical scattering)
68.60.-p Physical properties of thin films, nonelectronic

In‐gap optical absorption of amorphous Si3N4

C. H. Seager and J. A. Knapp

Appl. Phys. Lett. 45, 1060 (1984); http://dx.doi.org/10.1063/1.95068 (3 pages) | Cited 9 times

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The optical absorption coefficient of thin films of chemically vapor deposited amorphous Si3N4 has been measured for photon energies ranging from 1.7 to 3.9 eV using photothermal deflection spectroscopy. From these data it can be inferred that these films contain between 10 and 100 ppm in‐gap electronic states, a number consistent with estimates of the trapped charge density in metal‐nitride‐oxide‐semiconductor devices. While other investigators have inferred the existence of well defined trap energies from electrical data, the present measurements yield only broad, rather featureless absorption spectra.
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75.20.Ck Nonmetals
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Nonresonant multiphoton ionization as a sensitive detector of surface concentrations and evaporation rates

C. H. Becker and K. T. Gillen

Appl. Phys. Lett. 45, 1063 (1984); http://dx.doi.org/10.1063/1.95069 (3 pages) | Cited 11 times

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A general new mass spectrometric surface analysis method, using nonresonant multiphoton ionization of neutral material above the sample surface, has been applied to the examination of a copper NBS standard reference material. Sensitive trace element analysis has been demonstrated using an Ar+ ion beam to eject the surface material, showing sensitivities of <10−7 of a monolayer for all masses simultaneously. The technique is also shown to be useful for rapid and dynamic characterization of material composition, surface segregation, and differential evaporation (detecting partial pressures of ≲10−13 Torr). Many trace impurities are observed segregating to and evaporating from the surface of the NBS Cu sample when it is heated.
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82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
66.30.J- Diffusion of impurities
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)
07.75.+h Mass spectrometers

Raman study of structural transformations of titania coatings induced by laser annealing

L. S. Hsu, R. Solanki, G. J. Collins, and C. Y. She

Appl. Phys. Lett. 45, 1065 (1984); http://dx.doi.org/10.1063/1.95070 (3 pages) | Cited 12 times

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The first microscopic investigation of laser annealing of optical coatings is reported. Amorphous TiO2 coatings were ion sputtered onto Si wafers at room temperature. We show, using Raman spectroscopy, that upon laser annealing, the amorphous coatings were transformed into microcrystals of anatase structure at lower laser intensity and into a mixture of anatase and rutile structures at higher intensity.
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64.70.K- Solid-solid transitions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.66.Fn Inorganic compounds
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