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1 Dec 1984

Volume 45, Issue 11, pp. 1159-1250

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Phase‐locking characteristics of coupled ridge‐waveguide InP/InGaAsP diode lasers

E. Kapon, Z. Rav‐Noy, L. T. Lu, M. Yi, S. Margalit, and A. Yariv

Appl. Phys. Lett. 45, 1159 (1984); http://dx.doi.org/10.1063/1.95087 (3 pages) | Cited 10 times

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The phase‐locking characteristics of two coupled, ridge waveguide InP/InGaAsP diode lasers emitting at 1.2 μm were investigated experimentally. The phase locking of the lasers was verified by the observation of phase‐locked modes (supermodes) in the spectrally resolved near fields and distinct diffraction patterns in the far field. By independent control of the laser currents it was possible to vary continuously the mutual phase shift between the two phase‐locked lasers and thus steer the far‐field diffraction lobes. In addition, the separate current control could be utilized to obtain single longitudinal mode oscillation of the phase‐locked lasers. Variation in one of the laser currents resulted then in tuning of the wavelength of this single mode over a range of 90 Å.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.60.By Design of specific laser systems
42.82.-m Integrated optics

Anomalous nonlinear guided wave cut‐off phenomena

Colin T. Seaton, Jesus D. Valera, Richard L. Shoemaker, George I. Stegeman, John Chilwell, and S. Desmond Smith

Appl. Phys. Lett. 45, 1162 (1984); http://dx.doi.org/10.1063/1.95088 (2 pages) | Cited 9 times

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We show that mode cutoff can occur at finite powers for waves guided by a thin‐film waveguide bounded by one or two media characterized by a defocusing nonlinearity. This phenomenon produced optical limiting action.
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42.79.Gn Optical waveguides and couplers
84.40.Az Waveguides, transmission lines, striplines
77.55.-g Dielectric thin films

A fiber‐optic laser‐Doppler anemometer

Thang T. Nguyen and Le N. Binh

Appl. Phys. Lett. 45, 1163 (1984); http://dx.doi.org/10.1063/1.95089 (3 pages) | Cited 2 times

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A device to measure water particle velocity in two directions under a breaking water wave was developed using single‐mode, polarization‐preserving fibers in conjunction with a two‐color, three‐beam laser‐Doppler anemometer. The sensor uses backscatter method with two beams frequency shifted to measure velocity reversal in both directions.
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47.80.-v Instrumentation and measurement methods in fluid dynamics
42.81.-i Fiber optics
42.62.-b Laser applications
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Atmospheric pressure operation of an electron beam excited KrF laser using Kr/F2 mixtures

Akira Suda, Minoru Obara, and Tomoo Fujioka

Appl. Phys. Lett. 45, 1165 (1984); http://dx.doi.org/10.1063/1.95090 (3 pages) | Cited 14 times

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Atmospheric pressure operation of a KrF laser pumped by 50‐ns electron beams was experimentally investigated. For a 1‐atm mixture of Kr and F2 without diluent, a specific output energy of 4.2 J/1 was obtained at 1.7‐MW/cm3 excitation rate. Under this condition the intrinsic efficiency was about 5% (6% was maximum at 20% Kr in argon diluent) which was comparable to that from 1‐atm normal (10% Kr) mixtures.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Traveling‐wave electro‐optic modulator with maximum bandwidth‐length product

R. A. Becker

Appl. Phys. Lett. 45, 1168 (1984); http://dx.doi.org/10.1063/1.95091 (3 pages) | Cited 11 times

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A traveling‐wave Ti‐indiffused LiNbO3 guided‐wave Mach–Zehnder interferometric modulator has been fabricated and characterized at λ=0.85 μm. The modulator achieves the theoretical 3‐dB linear small‐signal bandwidth limit of 16 GHz for a 4‐mm‐long interaction length. With a ±2.25‐V drive signal, an extinction ratio of 22 dB is achieved. Linear small‐signal measurements made with a swept‐frequency technique are compared to previously reported measurements.
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42.79.Hp Optical processors, correlators, and modulators
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.81.-i Fiber optics

Continuous wave mode‐locked neodymium:phosphate glass laser

Scott A. Strobel, Ping‐Tong Ho, Chi H. Lee, and Geoffrey L. Burdge

Appl. Phys. Lett. 45, 1171 (1984); http://dx.doi.org/10.1063/1.95092 (2 pages) | Cited 5 times

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We report the first successful mode locking of a cw neodymium phosphate glass laser. Transform‐limited, 80‐ps pulses were generated at 1.054 μm.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Dynamics of optical TE to TM mode conversion in LiNbO3 channel waveguides

Juan F. Lam and Huan W. Yen

Appl. Phys. Lett. 45, 1172 (1984); http://dx.doi.org/10.1063/1.95081 (3 pages) | Cited 6 times

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We report an analysis of the phenomenon of TE to TM mode conversion in LiNbO3 waveguides. The process is a consequence of the photorefractivity associated with the tensor character of the photovoltaic effect. We predict the existence of a nonlinear phase shift during the energy transfer process as well as a threshold behavior in the dynamics of energy exchange.
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42.79.Gn Optical waveguides and couplers
78.20.Jq Electro-optical effects
84.40.Ba Antennas: theory, components and accessories

Ultrasensitive fingerprint detection of organometallic compounds by laser multiphoton ionization mass spectrometry

M. Stuke

Appl. Phys. Lett. 45, 1175 (1984); http://dx.doi.org/10.1063/1.95082 (3 pages) | Cited 19 times

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Fast, sensitive, and selective fingerprint detection of organometallics, with emphasis on dimethyltelluride CH3TeCH3, is described, using short and ultrashort pulse tunable dye laser controlled time‐of‐flight mass spectroscopy. Excellent spatial (∼10 μm) and time (≪1 ns) resolutions combined with high single shot selectivity and sensitivity down to 10−7 Torr and below (corresponding to 3×109 cm−3 or about 3000 molecules in the observation region) plus mass identification are obtained.
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82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
07.75.+h Mass spectrometers
68.55.-a Thin film structure and morphology
82.50.-m Photochemistry

1.55‐μm InGaAsP ridge waveguide distributed feedback laser

H. Temkin, G. J. Dolan, N. A. Olsson, C. H. Henry, R. A. Logan, R. F. Kazarinov, and L. F. Johnson

Appl. Phys. Lett. 45, 1178 (1984); http://dx.doi.org/10.1063/1.95083 (3 pages) | Cited 6 times

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Optical and modulation properties of ridge waveguide distributed feedback lasers grown by liquid phase epitaxy and operating in the spectral region of 1.51–1.58 μm have been investigated. These lasers were characterized by room temperature cw threshold currents as low as 40 mA, external quantum efficiency of up to 40%, and lowest order transverse mode operation up to 10 mW. Stable, single longitudinal mode operation under direct modulation of up to 4 GHz was obtained using second order gratings fabricated by electron beam writing as well as optical holography. The absence of partition mode events has allowed routine error free transmission over 60 km of single mode fiber at data rates of 2 Gb/s. The relationship between grating parameters and the Bragg length has been studied experimentally and compared with the theoretical results.
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42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes

Effect of photocarriers on acoustic wave propagation for measuring excess carrier density and lifetimes in silicon

R. G. Stearns, B. T. Khuri‐Yakub, and G. S. Kino

Appl. Phys. Lett. 45, 1181 (1984); http://dx.doi.org/10.1063/1.95084 (3 pages) | Cited 4 times

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A new technique is described to measure temporal periodic fluctuations in the free‐carrier density of silicon. It is based on the electronic dependence of the elastic constants, and involves the measurement of the perturbation in phase of an acoustic wave propagating through a region of modulated carrier density. An experiment is described in which the bulk lifetime of photogenerated carriers is determined using this technique. A theory is developed to predict the acoustic phase perturbation, and is found to agree well with experiment.
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62.20.D- Elasticity
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.35.Pt Surface waves in solids and liquids

Ion channeling studies of preferentially (111) oriented BaF2 films on amorphous SiO2 substrates

Hiroshi Ishiwara, Noriyuki Kaifu, and Tanemasa Asano

Appl. Phys. Lett. 45, 1184 (1984); http://dx.doi.org/10.1063/1.95085 (3 pages) | Cited 1 time

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The crystalline quality of preferentially (111) oriented BaF2 films grown on amorphous SiO2 has been investigated by ion channeling measurements, as well as x‐ray diffraction analyses and transmission electron microscopy (TEM). The films are grown by vacuum deposition onto heated (500–750 °C) Si substrates covered with SiO2 films. It has been found that the channeling effect of MeV ions occurs in BaF2 films on SiO2 and that the minimum yield in the films grown at 700 °C is as low as 9% near the surface. It has also been observed by TEM and x‐ray analyses that the average size of the crystallites and the spread of the crystallite orientation in the good films are about 400 nm and 0.4°, respectively.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.55.-a Thin film structure and morphology

Self‐diffusivity of network oxygen in vitreous SiO2

J. C. Mikkelsen

Appl. Phys. Lett. 45, 1187 (1984); http://dx.doi.org/10.1063/1.95086 (3 pages) | Cited 82 times

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Secondary ion mass spectrometry was used to profile the interdiffusion of network oxygen in a Si 16O2‐Si 18O2 thin‐film structure. The diffusivity from 1200 to 1400 °C can be described by D=2.6 cm2 s−1 exp (−4.7 eV/kT). The diffusivity values are lower, but with a higher activation energy, than those previously reported in the literature and approach the intrinsic diffusivity uncomplicated by extrinsic gas phase isotope exchange reactions.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
81.05.Kf Glasses (including metallic glasses)
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Saturation in the transfer characteristics of (Al,Ga)As/GaAs modulation‐doped field‐effect transistors at 77 K

W. T. Masselink, T. J. Drummond, J. Klem, W. Kopp, Y. C. Chang, F. Ponse, and H. Morkoç

Appl. Phys. Lett. 45, 1190 (1984); http://dx.doi.org/10.1063/1.95093 (3 pages) | Cited 2 times

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Modulation‐doped field‐effect transistors operating under large forward gate biases at 77 K have been studied both experimentally and theoretically. The theoretical analysis includes the self‐consistent solution of Schrödinger’s and Poisson’s equations in the GaAs channel and includes Fermi–Dirac statistics in the GaAs and AlGaAs. A dramatic decrease in transconductance is observed at large forward gate voltages and is explained within the theory as being due to limited two‐dimensional electron gas concentration and the gate voltage dependence of the concentration of electrons bound to donors in the AlGaAs. The balance of dynamics of the Fermi level versus conduction‐band energy and electron occupation of the relatively deep Si donors lead to the observed saturation in drain current versus gate voltage (transfer) characteristics.
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85.30.Tv Field effect devices

Pseudo‐quaternary GaInAsP semiconductors: A new Ga0.47In0.53As/InP graded gap superlattice and its applications to avalanche photodiodes

F. Capasso, H. M. Cox, A. L. Hutchinson, N. A. Olsson, and S. G. Hummel

Appl. Phys. Lett. 45, 1193 (1984); http://dx.doi.org/10.1063/1.95094 (3 pages) | Cited 25 times

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We have demonstrated for the first time a pseudo‐quaternary GaInAsP semiconductor consisting of a graded gap Ga0.47In0.53As/InP superlattice. The average composition and the band gap of this structure are spatially varied by gradually changing the thicknesses of the InP and Ga0.47In0.53As layers between 5 and 55 Å while keeping constant the period of the superlattice (=60 Å). This new graded gap superlattice has been used to eliminate the interface pile‐up effect of holes in a ‘‘high‐low’’ InP/Ga0.47In0.53As avalanche photodiode, without requiring the growth of a separately lattice‐matched Ga1−xInxAs1−yPy layer. High‐speed operation at 1.7 Gb/s and λ=1.55 μm has been achieved. Pseudo‐quaternary semiconductors represent a new technique of growing GaInAsP and can conveniently replace conventional Ga1−xInxAs1−yPy alloys in a variety of device applications.
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85.60.Dw Photodiodes; phototransistors; photoresistors
68.60.-p Physical properties of thin films, nonelectronic
68.55.-a Thin film structure and morphology
85.30.De Semiconductor-device characterization, design, and modeling

Surface accumulation of tin in tin‐doped gallium arsenide grown by low pressure metalorganic vapor phase epitaxy

V. S. Sundaram, A. P. Roth, D. F. Williams, and R. Yakimova

Appl. Phys. Lett. 45, 1196 (1984); http://dx.doi.org/10.1063/1.95095 (3 pages) | Cited 3 times

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The surface accumulation of tin in low pressure metalorganic chemical vapor epitaxy (MOVPE) grown tin‐doped GaAs layers has been investigated by secondary ion mass spectroscopy. Our results show that the surface enrichment factor for MOVPE grown layers is negligible for n≲5×1018 cm−3. For layers of higher doping densities this enrichment factor is smaller by more than an order of magnitude than that obtained for molecular beam epitaxy grown layers of comparable doping, in spite of the higher growth temperature used in MOVPE. A qualitative interpretation for the observed low surface enrichment factor is given.
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68.60.-p Physical properties of thin films, nonelectronic
68.55.-a Thin film structure and morphology
66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Relationship between the conduction‐band discontinuities and band‐gap differences of InGaAsP/InP heterojunctions

S. R. Forrest, P. H. Schmidt, R. B. Wilson, and M. L. Kaplan

Appl. Phys. Lett. 45, 1199 (1984); http://dx.doi.org/10.1063/1.95096 (3 pages) | Cited 100 times

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We have measured the magnitude of the conduction‐band discontinuities at heterojunctions for several compositions of InGaAsP grown lattice matched on InP. We find that the conduction‐band discontinuity (ΔEc) is related to the difference in band gaps (ΔEg) between the InGaAsP and InP layers via ΔEc =0.39(ΔEg). Thus, 40% of the band‐gap difference lies in the conduction band of this material system. The measurements were made on a series of composition of InGaAsP spanning the alloy range from In0.53Ga0.47As (with energy gap Eg =0.75 eV) to InP (Eg =1.35 eV) using capacitance‐voltage techniques. Depletion deep into the semiconductor layers was facilitated by the formation of organic‐on‐inorganic semiconductor contact barriers on the InGaAsP surface.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Hi Surface barrier, boundary, and point contact devices

Above threshold characteristics of amorphous silicon alloy thin‐film transistors

C. Hyun, M. S. Shur, M. Hack, Z. Yaniv, and V. Cannella

Appl. Phys. Lett. 45, 1202 (1984); http://dx.doi.org/10.1063/1.95097 (2 pages) | Cited 8 times

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We present experimental evidence to show that the field‐effect mobility in amorphous silicon alloy thin‐film transistors in the above threshold regime is dependent on the gate voltage. The current‐voltage transistor characteristics exhibit a power law dependence on gate voltage with an exponent close to 2.85.
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85.30.De Semiconductor-device characterization, design, and modeling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Reduction of electron and hole trapping in SiO2 by rapid thermal annealing

Z. A. Weinberg, D. R. Young, J. A. Calise, S. A. Cohen, J. C. DeLuca, and V. R. Deline

Appl. Phys. Lett. 45, 1204 (1984); http://dx.doi.org/10.1063/1.95098 (3 pages) | Cited 33 times

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Reduction of electron or hole trapping in SiO2 was achieved by short‐time lamp annealing. The trapping characterization was done by the avalanche injection technique on metal‐oxide‐silicon capacitor structures with aluminum gates and SiO2 thickness of 50 nm. Electron trapping on water related centers is reduced by 10‐s anneals in Ar or N2 ambients at 600–800 °C. Hole trapping is reduced by short anneals in an O2 ambient at 1000 °C with an optimal time of 100 s. The O2 short anneal is much more effective if the oxide had a long post‐oxidation anneal in N2 at 1000 °C which produces an interfacial nitrogen‐rich layer at the Si‐SiO2 interface.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
84.32.Tt Capacitors

Room‐temperature annealing of radiation‐induced defects in InP solar cells

Masafumi Yamaguchi, Yoshio Itoh, and Koushi Ando

Appl. Phys. Lett. 45, 1206 (1984); http://dx.doi.org/10.1063/1.95099 (3 pages) | Cited 17 times

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Observation of effective room‐temperature annealing of radiation‐induced defects in InP is reported. By maintaining InP solar cells at room temperature (277–295 K), defect annealing in both p‐type and n‐type InP after electron irradiation is found, which results in the recovery of InP solar cell properties. The recovery on InP solar cell properties is found to be due to room‐temperature annealing of radiation‐induced minority‐carrier deep trap in the substrate layer. These results suggest that InP solar cells have better radiation hardness characteristics than Si or GaAs solar cells.
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61.80.Fe Electron and positron radiation effects
84.60.Jt Photoelectric conversion
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Dynamic Burstein–Moss shift in GaAs and GaAs/AlGaAs multiple quantum well structures

D. J. Erskine, A. J. Taylor, and C. L. Tang

Appl. Phys. Lett. 45, 1209 (1984); http://dx.doi.org/10.1063/1.95100 (3 pages) | Cited 10 times

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Time‐resolved studies of the dynamic Burstein–Moss shift of the absorption edge following intense photoexcitation are reported for room‐temperature samples of GaAs and GaAs/AlGaAs multiple quantum well (MQW) structures. Band‐filling times, which correspond to the redistribution of electrons from an energy of 0.5 eV above the bottom of the conduction band to an energy of 0.15 eV, are found to be 1.7 to 1.3 ps for GaAs in the carrier density range of 0.5–2.0×1019 cm−3 and 1 ps for a MQW structure at a density of 2×1019 cm−3. An approximate rate equation model is presented which agrees reasonably well with the experimental results.
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78.70.Dm X-ray absorption spectra

Improved Schottky capacitance spectroscopy method for the study of interface states in metal‐semiconductor junctions

F. Chekir and C. Barret

Appl. Phys. Lett. 45, 1212 (1984); http://dx.doi.org/10.1063/1.95101 (3 pages) | Cited 12 times

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Schottky capacitance spectroscopy is an electrical method allowing the characterization of interface states at a metal‐semiconductor junction. This method is based on the study of the capacitance of a forward biased Schottky diode as a function of bias, temperature, and frequency. The experimental procedure previously described presents the drawback of being very time consuming because of the need for low‐frequency measurements. We describe here a new improved method allowing rapid and straightforward spectroscopy with high‐energy resolution.
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73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.-r Electron states at surfaces and interfaces

Quantum transport studies of grain boundaries in p‐Hg1−xMnxTe

G. Grabecki, T. Dietl, P. Sobkowicz, J. Kossut, and W. Zawadzki

Appl. Phys. Lett. 45, 1214 (1984); http://dx.doi.org/10.1063/1.95102 (3 pages) | Cited 30 times

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We show that charged traps at grain boundaries in p‐Hg1−xMnxTe lead to the formation of an inversion layer. The layers are dominant channels of electrical conductivity at low temperatures. By means of the Shubnikov–de Haas effect measurements we demonstrate that the electron gas in the layer forms a quasi‐two‐dimensional system. We determine electric subband populations and effective masses. We establish parameters of the potential well at the grain boundary within a simple model.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.My Galvanomagnetic and other magnetotransport effects
61.72.Mm Grain and twin boundaries
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Impurity and interfacial effects on the formation of amorphous Si from the melt

S. U. Campisano, D. C. Jacobson, J. M. Poate, A. G. Cullis, and N. G. Chew

Appl. Phys. Lett. 45, 1216 (1984); http://dx.doi.org/10.1063/1.95103 (3 pages)

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Amorphous Si has been formed from the melt by the UV laser heating of surface layers of single crystal (111) Si. The single crystals were doped with As, Bi, In, or Te to concentrations of approximately one part in 103. For the same quenching rates, the amorphous layers produced on the doped Si were substantially thicker than those on pure Si. Maximum amorphous thicknesses of 1200 Å were obtained. The amorphization phenomena are correlated with melt depths and interfacial segregation effects.
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64.70.Ja Liquid-liquid transitions
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
79.20.Ds Laser-beam impact phenomena

Evidence for nonuniform flow of charge carriers through semiconductor junctions

R. Tenne, V. Marcu, and N. Yellin

Appl. Phys. Lett. 45, 1219 (1984); http://dx.doi.org/10.1063/1.95104 (3 pages) | Cited 6 times

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Photoelectrochemical etching (photoetching) of many semiconductors leads to a pitted morphology with small etch pits (>109 cm−2) uniformly distributed over the entire semiconductor surface. It is shown here that the etch pit density increases with doping density and decreases with forward bias. These results suggest that charge flow within semiconductor junctions is highly nonuniform due to the existence of microscopic electric fields induced by the ionized donors within the space‐charge layer. Numerical results for a set of CdSe and CdTe crystals are reported.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.65.-b Surface treatments
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.U- Doping and impurity implantation

Photoluminescence of GaAs single quantum wells confined by short‐period all‐binary GaAs/AlAs superlattices

Kenzo Fujiwara and Klaus Ploog

Appl. Phys. Lett. 45, 1222 (1984); http://dx.doi.org/10.1063/1.95105 (3 pages) | Cited 20 times

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GaAs single quantum well heterostructures (SQWH’s) composed of all‐binary AlAs/GaAs heterostructures by using AlAs/GaAs short‐period superlattices (SPS) instead of the ternary alloy as cladding layers were grown by molecular beam epitaxy at low substrate temperature. Detailed photoluminescence measurements at 2 K reveal that these SPS confined SQWH’s exhibit superior luminescence properties. They are therefore very attractive for application in new optoelectronic devices. The SPS configuration has a strong effect on the energy of the confined particle transition because of the fully interacting quantum well system.
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78.55.-m Photoluminescence, properties and materials
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology
73.40.Gk Tunneling
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