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15 Dec 1984

Volume 45, Issue 12, pp. 1257-1325

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Quantum well oscillators

T. C. L. G. Sollner, P. E. Tannenwald, D. D. Peck, and W. D. Goodhue

Appl. Phys. Lett. 45, 1319 (1984); http://dx.doi.org/10.1063/1.95134 (3 pages) | Cited 113 times

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Oscillations have been observed for the first time from double barrier resonant tunneling structures. By eliminating impurities from the wells, we have been able to increase the tunneling current density by a factor of nearly 100. With the attendant increase in gain and improved impedance match to the resonant circuit, the devices oscillated readily in the negative resistance region. Oscillator output power of 5 μW and frequencies up to 18 GHz have been achieved with a dc to rf efficiency of 2.4% at temperatures as high as 200 K. It is shown that higher frequencies and higher powers can be expected.
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84.30.Ng Oscillators, pulse generators, and function generators
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Chemical trends in the activation energies of DX centers

O. Kumagai, H. Kawai, Y. Mori, and K. Kaneko

Appl. Phys. Lett. 45, 1322 (1984); http://dx.doi.org/10.1063/1.95135 (2 pages) | Cited 50 times

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The activation energies of DX centers in AlGaAs doped with six different impurities (S, Se, Te, Si, Ge, and Sn) are measured by deep level transient spectroscopy. Remarkable trends are established, in which the activation energies of DX centers with group IV impurities become shallower as the mass number of the impurity increases, while those with group VI impurities remain constant.
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78.40.Fy Semiconductors
61.72.J- Point defects and defect clusters

Anomalous decomposition profile of the excited triplet SiH3F: A prediction by ab initio molecular orbital calculations

Kota Sato, Tsuneo Hirano, Hiroatsu Natsuaki, Kazuo Fueki, and Hideomi Koinuma

Appl. Phys. Lett. 45, 1324 (1984); http://dx.doi.org/10.1063/1.95108 (2 pages) | Cited 6 times

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In search of new starting materials for producing amorphous silicon by plasma chemical vapor deposition, decomposition profiles through triplet states have been studied for fluorosilanes SiHmF4−m (m=0–4) by energy‐gradient ab initio molecular orbital calculations with the 6–21G∗∗ basis set. Anomalous Si–F bond cleavage at the first stage was concluded for triplet SiH3F, while all the other fluorosilanes decompose through the Si–H bond cleavage. The anomaly observed for triplet SiH3F is due to the positive charge on F and to the negative overlap population of the Si–F bond. Thus, SiH3F is expected to be a unique source for amorphous silicon films.
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82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
31.15.A- Ab initio calculations
82.20.Kh Potential energy surfaces for chemical reactions
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