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1 Aug 1984

Volume 45, Issue 3, pp. 189-302

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Proposed new class of optically pumped, quasi‐cw, ultraviolet and extreme ultraviolet lasers in the Be isoelectronic sequence

Mahadevan Krishnan and James Trebes

Appl. Phys. Lett. 45, 189 (1984); http://dx.doi.org/10.1063/1.95181 (3 pages) | Cited 14 times

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Intense line radiation from plasmas of Mn VI, P IX, Al V, Al VIII, Al IX, and Al XI may be used to selectively pump population inversions in plasmas of C III, N IV, F VI, Ne VII, Na VIII, and Mg IX. Quasi‐cw lasing is possible on 4p–3d and 4f–3d transitions at wavelengths 2177 –230 Å. At the extreme ultraviolet wavelengths, 1‐J, 10‐ns laser output pulses at 108 W power levels are shown possible with existing discharge and laser technology.
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42.55.-f Lasers
32.80.Xx Level crossing and optical pumping

Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors

Jun Shibata, Ichiro Nakao, Yoichi Sasai, Soichi Kimura, Nobuyasu Hase, and Hiroyuki Serizawa

Appl. Phys. Lett. 45, 191 (1984); http://dx.doi.org/10.1063/1.95205 (3 pages) | Cited 21 times

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A monolithic integration of an InGaAsP laser diode together with current supplying circuit on a single InP substrate has been achieved. Heterojunction bipolar transistors (HBT’s) have been constructed utilizing the burying epitaxial layers of the buried heterostructure laser diode. The laser has been successfully modulated up to 1.6 GHz through the HBT’s driving circuit with sinusoidal electrical signal.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
42.82.-m Integrated optics
42.55.Px Semiconductor lasers; laser diodes
85.30.Pq Bipolar transistors

Wavelength coverage of lead‐europium‐selenide‐telluride diode lasers

Dale L. Partin and Christopher M. Thrush

Appl. Phys. Lett. 45, 193 (1984); http://dx.doi.org/10.1063/1.95206 (3 pages) | Cited 16 times

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Diode lasers made from a new semiconductor material, Pb1−xEuxSeyTe1−y, have recently been developed for sensor applications. This material is grown by molecular beam epitaxy and may be lattice matched to PbTe substrates. Double heterojunction mesa stripe diode lasers have been fabricated and the laser emission energy determined as a function of composition. At 80 K, the emission energy follows the relation E (in eV)=0.219+5.51x. With the range of active region compositions so far explored (up to x=0.046, y=0.054), the wavelength range 6.6–2.6 μm can be covered under pulsed conditions (6.6–3.8 μm cw). Laser operation up to 190 K pulsed, 147 K cw, has been attained with up to 1‐mW single mode output power. These devices are useful for spectroscopic measurements of molecules in a gas or adsorbed onto surfaces.
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85.60.Jb Light-emitting devices
42.55.Px Semiconductor lasers; laser diodes
85.30.De Semiconductor-device characterization, design, and modeling

Fabrication and characterization of GaAs Schottky barrier photodetectors for microwave fiber optic links

H. Blauvelt, G. Thurmond, J. Parsons, D. Lewis, and H. Yen

Appl. Phys. Lett. 45, 195 (1984); http://dx.doi.org/10.1063/1.95207 (2 pages) | Cited 7 times

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High‐Speed GaAs Schottky barrier photodiodes have been fabricated and characterized. These detectors have 3‐dB bandwidths of 20 GHz and quantum efficiencies as high as 70%. The response of the detectors to light modulated at 1–18 GHz has been directly measured. Microwave modulated optical signals were obtained by using a LiNbO3 traveling wave modulator and by heterodyning two laser diodes.
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85.60.Dw Photodiodes; phototransistors; photoresistors
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.30.Hi Surface barrier, boundary, and point contact devices
85.60.Gz Photodetectors (including infrared and CCD detectors)

Transient frequency shift induced by the electron density in injection locking of transversely excited atmospheric CO2 lasers

P. Cassard and J‐M. Lourtioz

Appl. Phys. Lett. 45, 197 (1984); http://dx.doi.org/10.1063/1.95208 (3 pages) | Cited 1 time

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The time‐dependent discharge electron density of transversely excited atmospheric (TEA) CO2 lasers is shown to induce large frequency upshifts of the injection locking band from the TEA laser cavity resonance. The single mode laser frequency measured at the pulse onset was also upshifted. Both the TEA laser and the cw CO2 injecting laser were heterodyned at high frequency with a common cw N2O laser local oscillator. The injecting laser, which provided the scanning frequency, was used for monitoring the TEA laser cavity reflection. At different pumping powers, voltage‐current characteristics have been measured for estimating the electron density. A comparison of the estimated frequency shifts to the measured frequency shifts is reported.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
52.80.-s Electric discharges
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)

Chirped arrays of diode lasers for supermode control

E. Kapon, C. Lindsey, J. Katz, S. Margalit, and A. Yariv

Appl. Phys. Lett. 45, 200 (1984); http://dx.doi.org/10.1063/1.95209 (3 pages) | Cited 25 times

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We propose nonuniform structures of phase‐locked diode lasers, which make it possible to discriminate efficiently against all the higher order array supermodes (lateral modes). In these nonuniform arrays, the effective mode index in each channel varies across the array. Consequently, the envelopes of the various supermodes, including the highest order one, differ significantly from each other. Thus, by proper tailoring of the gain distribution across the array, one can conveniently select the fundamental supermode. Such fundamental supermode oscillation is essential in order to obtain single lobe, diffraction limited beams and minimal spectral spread from phase‐locked laser arrays.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

Reactively sputtered TeNx optical recording media

M. A. Bösch, H. R. Haller, L. M. Schiavone, and J. L. Shay

Appl. Phys. Lett. 45, 202 (1984); http://dx.doi.org/10.1063/1.95182 (3 pages) | Cited 1 time

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The optical recording characteristics of TeNx films are described. Te‐nitride formation has been achieved by reactive sputtering. The optical writing properties vary drastically with increasing nitrogen incorporation. Films with moderate nitrogen content maintain good hole and rim forming properties while enhancing the sensitivity of the medium. These layers show a considerable resistance against rapid environmental stress.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
75.20.Ck Nonmetals
79.20.Ds Laser-beam impact phenomena
81.15.Cd Deposition by sputtering

Q switching of low‐threshold buried‐heterostructure diode lasers at 10 GHz

D. Z. Tsang, J. N. Walpole, Z. L. Liau, S. H. Groves, and V. Diadiuk

Appl. Phys. Lett. 45, 204 (1984); http://dx.doi.org/10.1063/1.95183 (3 pages) | Cited 7 times

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Buried‐heterostructure actively Q‐switched diode lasers have been made with threshold currents as low as 14 mA. The lasers operate continuously at room temperature. Modulation has been observed at rates up to 10.5 GHz. Evidence of several modes of Q switching has been obtained.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Effects of water vapor on modes in Ti‐indiffused LiNbO3 planar waveguides

S. Forouhar, G. E. Betts, and W. S. C. Chang

Appl. Phys. Lett. 45, 207 (1984); http://dx.doi.org/10.1063/1.95184 (3 pages) | Cited 9 times

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We report two observations concerning the addition of water vapor to the O2 gas flowing during Ti indiffusion in LiNbO3. (1) Outdiffusion is not completely suppressed (e.g., at 1100 °C an out‐diffused mode occurs after 40 min when the flowing gas is 85% H2O). (2) Water vapor has an effect on the indiffused modes that is not due to suppression of outdiffusion. We compare planar guides diffused in dry O2, wet O2, and LiNbO3 powder to show this effect. Our data support the hypothesis that water vapor reduces the Ti diffusion constant (∼9×10−13 cm2/s with <3% H2O, ∼4×10−13 cm2/s with 85% H2O, at 1000 °C).
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42.79.Gn Optical waveguides and couplers
66.30.J- Diffusion of impurities
42.82.-m Integrated optics
81.40.Tv Optical and dielectric properties related to treatment conditions

Cavityless optical bistability due to light‐induced absorption in cadmium sulfide

M. Dagenais and W. F. Sharfin

Appl. Phys. Lett. 45, 210 (1984); http://dx.doi.org/10.1063/1.95185 (3 pages) | Cited 40 times

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Cavityless, whole‐beam optical bistability in thin, uncoated cadmium sulfide platelets is observed at milliwatt power levels when a cw laser is tuned near a sharp extrinsic excitonic resonance in cadmium sulfide (the I2 bound exciton). Very large contrast ratios between the on and off states are measured. The detuning and temperature dependence of the bistability results are reported. Preliminary transient measurements are also discussed.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
71.35.-y Excitons and related phenomena
42.79.Hp Optical processors, correlators, and modulators

On the origin of the long‐wavelength loss anomaly in H2‐treated germano‐phospho‐silicate glass fibers

J. Stone, C. A. Burrus, and J. M. Wiesenfeld

Appl. Phys. Lett. 45, 212 (1984); http://dx.doi.org/10.1063/1.95186 (3 pages) | Cited 1 time

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We show, by isotopic substitution OH→OD, that the added loss beyond 1.3 μm in optical fibers when treated in H2 at 200 °C is OH absorption. It consists of a peak around 1.4 μm which is OH overtone absorption and a monotonic increase beyond 1.5 μm which is the wing of the OH fundamental absorption. The amount of OH fundamental absorption due to H2 at 200 °C is much smaller for a P‐doped silica glass than for a Ge‐P‐doped glass.
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81.40.Tv Optical and dielectric properties related to treatment conditions
42.79.Gn Optical waveguides and couplers
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.20.Tr Kinetic isotope effects including muonium

Optical‐optical guided‐wave modulator

H. Yajima, E. Sudo, J. Yumoto, and K. Kashiwa

Appl. Phys. Lett. 45, 214 (1984); http://dx.doi.org/10.1063/1.95187 (3 pages) | Cited 1 time

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An amorphous silicon photovoltaic detector was integrated on the LiNbO3 interferometric waveguide type guided‐wave modulator, and guided‐wave modulation by an external He‐Ne laser light was demonstrated with a time response of 5 μs.
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42.79.Hp Optical processors, correlators, and modulators
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Gn Optical waveguides and couplers

Observation of supermodes in a phase‐locked diode laser array

Thomas L. Paoli, William Streifer, and Robert D. Burnham

Appl. Phys. Lett. 45, 217 (1984); http://dx.doi.org/10.1063/1.95188 (3 pages) | Cited 28 times

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Phase‐locked diode laser arrays have been observed to oscillate in collective modes (supermodes) characteristic of a composite waveguide formed as a result of optical coupling between the fields of individual waveguides in the array. For an array of 11 gain‐guided lasers, as many as five different supermodes oscillated simultaneously at wavelengths separated by approximately 0.3 Å. Each supermode was identified by spectrally resolving the spatial profile of the optical intensity on the laser facet.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

All‐optical remote monitoring of propane gas using a 5‐km‐long, low‐loss optical fiber link and an InGaP light‐emitting diode in the 1.68‐μm region

Kinpui Chan, Hiromasa Ito, and Humio Inaba

Appl. Phys. Lett. 45, 220 (1984); http://dx.doi.org/10.1063/1.95189 (3 pages) | Cited 6 times

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See Also: Erratum

Show Abstract
We report the fully optical remote detection of low‐level propane (C3H8) gas realized by the scheme based on a long distance, very low‐loss silica optical fiber link connected to a compact absorption cell in conjunction with a high radiant InGaP light‐emitting diode at 1.68 μm. For this application, the near‐infrared absorption spectrum of propane was measured and studied to find very complicated bands around 1.69, 1.53, and 1.38 μm. This simple system, employing a 5‐km‐long silica optical fiber link, was demonstrated to be capable of achieving reproducibly the detection sensitivity less than 2.4 Torr for propane gas in air, i.e., about 14% of the lower explosion limit of propane density. This result verifies a large capability for major applications to various strategic points within the environment, such as industrial complexes as well as urban and residential areas, with considerably increased reliability and safety over the existing techniques.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
42.81.-i Fiber optics
89.60.-k Environmental studies

Depth profiles of perpendicular and parallel strain in a GaAsxP1−x/GaP superlattice

V. S. Speriosu, M.‐A. Nicolet, S. T. Picraux, and R. M. Biefeld

Appl. Phys. Lett. 45, 223 (1984); http://dx.doi.org/10.1063/1.95190 (3 pages) | Cited 13 times

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Using double‐crystal x‐ray rocking curves, depth profiles of parallel and perpendicular strain were obtained in a GaAs0.14P0.86/GaP superlattice grown on a buffer layer on (100) GaP. Combining symmetric Fe Kα1 (400) and asymmetric Cu Kα1 (422) reflections, a constant parallel strain of 0.19% relative to the substrate was found throughout the superlattice and buffer layer. Relative to the substrate, the perpendicular strain was found to be 0.26% in the buffer, and 0.80% and −0.19% in the 176‐Å‐thick superlattice GaAsxP1−x and GaP layers, respectively. The strain profiles indicate the buffer is ∼80% decoupled from the substrate by misfit dislocations near the buffer/substrate interface, and the lattice misfit in the superlattice is elastically accommodated by the epitaxial structure with a small shift in the average lattice constant relative to the equilibrium superlattice structure.
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68.55.-a Thin film structure and morphology
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.05.C- X-ray diffraction and scattering

Observation of enhanced emission of the O VIII Hα line in a recombining laser‐produced plasma

D. L. Matthews, E. M. Campbell, K. Estabrook, W. Hatcher, R. L. Kauffman, R. W. Lee, and C. L. Wang

Appl. Phys. Lett. 45, 226 (1984); http://dx.doi.org/10.1063/1.95191 (3 pages) | Cited 6 times

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We have observed enhanced emission of the O VIII Hα line at 121 eV from a recombining plasma produced by laser heating of a thin Formvar foil with two opposed cylindrically focused (0.3×1.4 cm) 5‐TW laser beams. The time‐dependent intensity of the Hα line increases by nearly an order of magnitude as the plasma length is increased from 0.27 to 1.27 cm. This increase in intensity is greater than that expected from a medium exhibiting no gain. A comparison of the measured time history of the emission with that of non‐local thermodynamic equilibrium time‐dependent calculations suggests that a small‐signal gain ∼0.5 cm−1 is obtained.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Kn Thermodynamics of plasmas
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Fast ion imaging with a pinhole camera in laser‐produced plasmas

R. Decoste, J. C. Kieffer, D. Pascale, and H. Pepin

Appl. Phys. Lett. 45, 229 (1984); http://dx.doi.org/10.1063/1.95192 (3 pages)

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Fast ion imaging with a pinhole camera is shown to be quite reliable provided the camera parameters are correctly chosen. Space‐charge expansion of the ion beam beyond the pinhole can be minimized by adjusting the ion energy filtration, the camera magnification, and the target‐to‐pinhole distance. Scaling of space‐charge effects with the camera dimensions is discussed. Two experimental technqiues are also demonstrated to verify in situ the spatial resolution at the image plane.
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52.70.Nc Particle measurements
29.27.Eg Beam handling; beam transport
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Investigation of effectiveness of gas flow action on arc discharge initiated in contact breaking

E. A. Azizov, N. A. Akhmerov, and V. A. Godonyuk

Appl. Phys. Lett. 45, 232 (1984); http://dx.doi.org/10.1063/1.95193 (3 pages)

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Heavy‐current arc discharges initiated in breaking tubular electrodes were studied. The action of transonic gas flow on discharge electrical characteristics in the case of interelectrode gap monotonic increase was investigated. The electrode mean velocity amounted to 10–40 m/s. All the experiments were carried out on a model of a single‐shot circuit breaker with an explosive actuator for breaking a current‐carrying element.
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52.80.Mg Arcs; sparks; lightning; atmospheric electricity
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
52.25.Fi Transport properties

Electrical discharge channel in cesium vapor initiated by a XeCl laser

M. Hijikawa, H. Tamura, H. Arishima, K. Horioka, and K. Kasuya

Appl. Phys. Lett. 45, 234 (1984); http://dx.doi.org/10.1063/1.95194 (3 pages) | Cited 5 times

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Plasma channels for transporting intense ion beams were initiated by a 308‐nm XeCl laser. The laser beam caused one‐photon ionization of the cesium atoms which were seeded in a buffer Ar gas. Utilizing this mechanism, plasma channels were easily initiated up to 70 cm in length. The electron density and temperature of the plasma produced by the laser beam were also measured.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.75.-d Plasma devices
29.27.Eg Beam handling; beam transport

Observation of lines above 2000 Å in O VIII and C VI in the Princeton Large Torus due to charge‐exchange processes: Diagnostic applications

S. Suckewer, C. H. Skinner, B. Stratton, R. Bell, A. Cavallo, J. Hosea, D. Hwang, and G. Schilling

Appl. Phys. Lett. 45, 236 (1984); http://dx.doi.org/10.1063/1.95195 (3 pages) | Cited 12 times

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Hydrogenlike oxygen and carbon lines from transitions (Δn=1) between levels of high principal quantum number n, with wavelengths above 2000 Å have been observed. Observations of such transitions were possible due to charge‐exchange processes during neutral beam injection of hydrogen atoms into the Princeton Large Torus tokamak. The lines are O VIII 2976 Å (8–7 transitions), C VI 3434 Å (7–6), and C VI 5291 Å (8–7). Application of these lines for ion temperature measurements and initial observations of neutral beam vertical distributions in the plasma are presented.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.55.Fa Tokamaks, spherical tokamaks
52.55.Hc Stellarators, torsatrons, heliacs, bumpy tori, and other toroidal confinement devices
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.40.Mj Particle beam interactions in plasmas

Plasma‐deposited thin‐film step coverage calculated by computer simulation

R. C. Ross and J. L. Vossen

Appl. Phys. Lett. 45, 239 (1984); http://dx.doi.org/10.1063/1.95196 (2 pages) | Cited 11 times

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Thin‐film growth contours from a diffuse source onto two‐dimensional steps with varied sidewall angles and interstep aspect ratios have been computer simulated using string moving algorithms. Minimum fractional coverage occurs on the sidewall position nearest the step bottom in all cases. This position defines both the conductance limiting region for conductors and the point of voltage breakdown for dielectrics. The variations in minimum fractional coverage with changes in sidewall angle and step dimensional ratios indicate the importance and limitations of sidewall tapering for ‘‘small’’ geometries.
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68.55.-a Thin film structure and morphology

Ultrafast laser‐induced oxidation of silicon: A new approach towards high quality, low‐temperature, patterned SiO2 formation

T. E. Orlowski and H. Richter

Appl. Phys. Lett. 45, 241 (1984); http://dx.doi.org/10.1063/1.95197 (3 pages) | Cited 21 times

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A new low‐temperature method of rapidly forming (>100 Å/s) high quality patterned silicon dioxide (SiO2) layers on silicon substrates is presented. Ultraviolet pulsed laser excitation in an oxygen environment is utilized. Infrared absorption measurements indicate that the laser grown oxide is stoichiometric but with a higher degree of disorder than thermally grown oxide. From capacitance‐voltage measurements we deduce a fixed oxide charge near the Si‐SiO2 interface of 6×1010/cm2 for oxides that have been thermally annealed following the laser induced growth making this material a candidate for applications in semiconductor devices.
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81.65.-b Surface treatments
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)
73.40.Mr Semiconductor-electrolyte contacts
61.50.Nw Crystal stoichiometry

Fundamental considerations of the efficiency of amorphous solar cells

M. Hack and S. Guha

Appl. Phys. Lett. 45, 244 (1984); http://dx.doi.org/10.1063/1.95198 (3 pages) | Cited 1 time

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Using a computer simulation, we have calculated the dependence of efficiency of both single junction and tandem amorphous solar cells on the band gap of the active layers. We have also developed a simple expression to relate the open‐circuit voltage of an amorphous solar cell to the ratio of the photoconductivity to dark conductivity of the intrinsic layer. This provides a powerful diagnostic tool for the evaluation of low band‐gap amorphous materials.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
72.80.Ng Disordered solids

Method for determining emitter recombination in Si solar cells using open‐circuit voltage decay

B. H. Rose and H. T. Weaver

Appl. Phys. Lett. 45, 247 (1984); http://dx.doi.org/10.1063/1.95199 (3 pages) | Cited 1 time

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A method for determining the emitter recombination current and thereby partitioning the total carrier recombination current into the different sections of a silicon solar cell is demonstrated. The method is destructive, requiring that a set of measurements is made on a cell before and after mechanically roughening the back of the cell. The data include short‐circuit current (Jsc), open‐circuit voltage (Voc), and asymptotic decay rates for Jsc and Voc. High open‐circuit voltage (650 mV) silicon cells are studied using the technique. It is shown that the emitter recombination current is large (1.5×10−13 A/cm2), which is consistent with a band‐gap narrowing mechanism. Furthermore, the high voltages are shown to result from unusually long base lifetimes (>300 μs) in 0.3‐Ω cm silicon.
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72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Effect of stress relaxation on the generation of radiation‐induced interface traps in post‐metal‐annealed Al‐SiO2‐Si devices

Viktor Zekeriya and T‐P. Ma

Appl. Phys. Lett. 45, 249 (1984); http://dx.doi.org/10.1063/1.95200 (3 pages) | Cited 12 times

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We have found experimentally that both the interfacial stress distribution and the generation of interface traps in an Al‐SiO2‐Si structure change systematically with time lapse between post‐metal‐anneal treatment and x‐ray irradiation, and strong correlation between the two is established. The results suggest that the device radiation sensitivity is modulated by the interfacial stress and/or the oxide bond strain gradient. Two possible mechanisms based on the variations of the interfacial strained bonds are proposed to explain the results.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
61.80.Cb X-ray effects
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