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1 Aug 1984

Volume 45, Issue 3, pp. 189-302

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Soft x‐ray spectral characterization of resist polymer using synchrotron radiation

Kozo Mochiji, Takeshi Kimura, Hidehito Obayashi, and Mihiro Yanagihara

Appl. Phys. Lett. 45, 251 (1984); http://dx.doi.org/10.1063/1.95201 (2 pages) | Cited 2 times

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Soft x‐ray absorption spectra and spectral sensitivity of x‐ray resist, poly‐2‐methylpentene‐1‐sulfone, are studied using synchrotron radiation. Shape resonance around the S2p edge and chemical shift among C1s levels are observed in the absorption spectra. The degradation efficiency of the resist is found to vary with incident photon wavelength.
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78.70.Dm X-ray absorption spectra

Concentration of electrons in selectively doped GaAlAs/GaAs heterojunction and its dependence on spacer‐layer thickness and gate electric field

K. Hirakawa, H. Sakaki, and J. Yoshino

Appl. Phys. Lett. 45, 253 (1984); http://dx.doi.org/10.1063/1.95202 (3 pages) | Cited 42 times

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The concentration Ns of two‐dimensional electrons in N‐GaAlAs/GaAs systems is studied; Ns shows a systematic decrease when the thickness Wsp of an undoped GaAlAs ‘‘spacer layer’’ is increased. Such a dependence is shown to be well explained by the theory in which the size quantization is taken into account. Furthermore, Ns is studied as a function of gate voltage in field‐effect transistor (FET) structures and found to saturate once Ns reaches its limiting value. This phenomenon is strongly dependent on Wsp and is well ascribed to the formation of nondepleted region in the GaAlAs layers. Implications for FET designs are discussed.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Tv Field effect devices
71.20.-b Electron density of states and band structure of crystalline solids

Interfacial reactions of Ni‐Ta thin films on GaAs

A. Lahav and M. Eizenberg

Appl. Phys. Lett. 45, 256 (1984); http://dx.doi.org/10.1063/1.95203 (3 pages) | Cited 20 times

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The interfacial reactions between Ta‐Ni thin films and (100) GaAs substrate have been analyzed by Auger electron spectroscopy, x‐ray diffraction, and transmission electron microscopy. A pure Ni film reacts with GaAs at 250 °C forming a ternary Ni2 GaAs epitaxial compound, which at 600 °C dissociates to NiGa and NiAs. Ta interacts with GaAs only at 650 °C. In the case of a Ta/Ni film on GaAs at temperatures up to 450 °C only the Ni layer reacts with the substrate forming Ni2GaAs. At higher temperatures the dissociation of Ni2GaAs combined with As outdiffusion results in the structure TaAs/NiGa/GaAs. For the complementary Ni/Ta bilayer, the Ta/GaAs interface is intact up to 500 °C; at this temperature only Ni‐Ta intermixing takes place. At 600 °C, Ni penetrates into the interface with GaAs and forms NiGa. The reaction of the alloy film Ni60Ta40 with GaAs starts at 450 °C by Ni leaching out of the alloy and forming Ni2GaAs at the interface with GaAs. At higher temperatures the reaction results in a structure similar to that obtained for the bilayers with NiGa adjacent to the GaAs substrate. The potential applications of the studied metallization schemes for contacting to GaAs are also discussed.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology
81.40.Gh Other heat and thermomechanical treatments

Vertical field‐effect transistors in III‐V semiconductors

Z. Rav‐Noy, L‐T. Lu, E. Kapon, S. Mukai, S. Margalit, and A. Yariv

Appl. Phys. Lett. 45, 258 (1984); http://dx.doi.org/10.1063/1.95204 (3 pages) | Cited 2 times

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Vertical metal‐semiconductor field‐effect transistors in GaAs/GaAlAs and vertical metal‐oxide‐semiconductor field‐effect transistors (MOSFET’s) in InP/GaInPAs materials have been fabricated. These structures make possible short channel devices with gate lengths defined by epitaxy rather than by submicron photolithography processes. Devices with transconductances as high as 280 mS/mm in GaAs and 60 mS/mm (with 100‐nm gate oxide) for the InP/GaInPAs MOSFET’s were observed.
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85.30.Tv Field effect devices

Space‐charge‐induced optoelectronic switching in IIa diamond

J. Glinski, X.‐J. Gu, R. F. Code, and H. M. van Driel

Appl. Phys. Lett. 45, 260 (1984); http://dx.doi.org/10.1063/1.95164 (3 pages) | Cited 3 times

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Experimental results are presented concerning the effect of contacts on the performance of high‐voltage optoelectronic switching in insulating diamond. For high bias voltages and low intensity 222‐nm, ≊7‐ns pulse illumination near the cathode, the switched voltage pulse splits into two peaks. The first peak corresponds to the high‐speed photoconductive response of the diamond, while the second peak (which can be delayed up to ≊200 ns later) is attributed to space‐charge‐induced switching in the vicinity of the cathode.
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72.40.+w Photoconduction and photovoltaic effects
85.60.-q Optoelectronic devices
84.32.Dd Connectors, relays, and switches
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Experimental determination of the temperature dependence of argon annealed fixed oxide charge at the Si/SiO2 interface

A. I. Akinwande, C. P. Ho, and J. D. Plummer

Appl. Phys. Lett. 45, 263 (1984); http://dx.doi.org/10.1063/1.95165 (3 pages) | Cited 5 times

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Fixed oxide charge density Nf at the Si/SiO2 interface for (100) and (111) wafers oxidized in dry O2 and annealed in argon has been studied as a function of the Ar anneal temperature. In contrast to previous qualitative results, the annealed Nf value was found to be dependent on the anneal temperature. Wafers thermally cycled in Ar between different temperatures showed reproducible, steady state Nf values which also cycled with temperature. These results may indicate that residual charge densities after annealing represent an equilibrium state of the Si/SiO2 interface.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.61.Ng Insulators

Dispersion of the refractive index of ternary compound Pb1−xSnxTe

B. Jensen and A. Torabi

Appl. Phys. Lett. 45, 266 (1984); http://dx.doi.org/10.1063/1.95166 (3 pages) | Cited 2 times

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The refractive index of Pb1−xSnxTe below the fundamental absorption edge is calculated as a function of photon energy and carrier concentration. Use of the band structure of the Kane theory results in a good agreement of theory with experiment. Numerical values of the refractive index for some values of x in the range 0≤x≤0.42 are given and discussed.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Self‐interstitial enhanced carbon diffusion in silicon

J. P. Kalejs, L. A. Ladd, and U. Gösele

Appl. Phys. Lett. 45, 268 (1984); http://dx.doi.org/10.1063/1.95167 (2 pages) | Cited 24 times

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Out‐diffusion of carbon from silicon wafers during annealing at 900 °C is observed to be enhanced by the in‐diffusion of phosphorus as compared to annealing in a nitrogen ambient. This diffusion enhancement is suggested to be due to phosphorus‐induced silicon self‐interstitials and an appreciable diffusion component of carbon in silicon involving self‐interstitials.
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66.30.J- Diffusion of impurities
61.72.jd Vacancies
61.72.jj Interstitials
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Breakdown in silicon oxides—correlation with Cu precipitates

Kouichirou Honda, Akira Ohsawa, and Nobuo Toyokura

Appl. Phys. Lett. 45, 270 (1984); http://dx.doi.org/10.1063/1.95168 (2 pages) | Cited 46 times

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Thin oxides grown on silicon substrate in which Cu+ ions had been implanted before oxidation were studied by transmission electron microscope (TEM) and scanning TEM imaging methods. Cu precipitates, stacking faults, and dislocations appeared at the SiO2/Si interface on the degraded specimens. The Cu precipitates reduce the breakdown strength by local thinning of the oxide thickness. Stacking faults and dislocations, however, do not reduce the breakdown strength.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
77.22.Jp Dielectric breakdown and space-charge effects

Optical approach to thermopower and conductivity measurements in thin‐film semiconductors

Helmut Dersch and Nabil M. Amer

Appl. Phys. Lett. 45, 272 (1984); http://dx.doi.org/10.1063/1.95169 (3 pages) | Cited 2 times

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An optical beam deflection technique is applied to measure the Joule and Peltier heat generated by electric currents through thin‐film semiconductors. The method yields a spatially resolved conductivity profile and allows the determination of Peltier coefficients. Results obtained on doped hydrogenated amorphous silicon films are presented.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Growth and patterning of GaAs/Ge single crystal layers on Si substrates by molecular beam epitaxy

P. Sheldon, K. M. Jones, R. E. Hayes, B‐Y. Tsaur, and John C. C. Fan

Appl. Phys. Lett. 45, 274 (1984); http://dx.doi.org/10.1063/1.95170 (3 pages) | Cited 26 times

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Single crystal GaAs layers have been grown on Si substrates with an intermediate Ge layer. Both the Ge and subsequent GaAs are grown in situ by molecular beam epitaxy (MBE). Cross‐sectional transmission electron microscopy studies show GaAs surface dislocation densities on the order of 107 cm−2. The quality of the GaAs is indicated by a mobility within 15% of that measured on GaAs/GaAs MBE structures doped at the same level. This material also exhibits a photoluminescence signal with a room‐temperature intensity about 50% of GaAs grown on GaAs, and with a similar half‐width. In this letter, electron diffraction, optical and electrical data are presented for n‐type GaAs/Ge/Si structures. In addition, a selective lift‐off technique is demonstrated, with possible applications in the development of monolithic GaAs/Si integrated circuits.
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68.55.-a Thin film structure and morphology
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Semiconductor properties of polyphosphides

R. Schachter, C. G. Michel, M. A. Kuck, J. A. Baumann, D. J. Olego, L. G. Polgar, P. M. Raccah, and W. E. Spicer

Appl. Phys. Lett. 45, 277 (1984); http://dx.doi.org/10.1063/1.95171 (3 pages) | Cited 9 times

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For the first time, the electro‐optical properties of nontetrahedrally bonded crystalline and amorphous polyphosphides have been investigated. The crystalline archetype KP15 is a high resistivity semiconductor, with photoconductivity and photoluminescence at the band gap (1.7 eV). These measurements are extended to amorphous films prepared by vapor transport methods. The resistivity of the films has been varied over eight orders of magnitude by the incorporation of 0%–2% Ni. Nonlinear metal‐semiconductor behavior with good current carrying capability (1 A/cm2) has been observed. When deposited on InP, the films reduce the density of surface states in metal‐insulator‐semiconductor diodes to ∼1010/cm2 eV, probably by providing continuity to the group V element at the interface. It is concluded that the low crystal symmetry of polyphosphides leads to a significant new amorphous semiconductor in which the electronic coherence length is commensurate with the intermediate range order.
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72.80.Ng Disordered solids
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.80.Jc Other crystalline inorganic semiconductors
78.20.Ls Magneto-optical effects

Role of the piezoelectric effect in device uniformity of GaAs integrated circuits

M. F. Chang, C. P. Lee, P. M. Asbeck, R. P. Vahrenkamp, and C. G. Kirkpatrick

Appl. Phys. Lett. 45, 279 (1984); http://dx.doi.org/10.1063/1.95172 (3 pages) | Cited 7 times

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In order to assess the orientation dependence of device uniformity in GaAs integrated circuits, metal‐semiconductor field‐effect transistors (MESFET’s) were fabricated along different crystal orientations on a 3‐in. (100) substrate and compared with one another. Measurements indicated that the characteristics of FET’s oriented along [011] and [011] directions have strong dependence upon their radial positions on the wafer. However, FET’s oriented in [001] and [010] directions do not display such dependence and have better device uniformity. The orientation effect on the radial dependence of the FET device characteristics can be attributed to the piezoelectric effect.
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85.30.Tv Field effect devices
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
77.65.-j Piezoelectricity and electromechanical effects
85.40.Bh Computer-aided design of microcircuits; layout and modeling

High power output, low threshold, inner stripe GaInAsP laser diode on a p‐type InP substrate

K. Imanaka, H. Horikawa, A. Matoba, Y. Kawai, and M. Sakuta

Appl. Phys. Lett. 45, 282 (1984); http://dx.doi.org/10.1063/1.95173 (2 pages) | Cited 9 times

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A V‐grooved, inner stripe laser diode on a p‐type InP substrate emitting at 1.3 μm is reported. The maximum cw output power of 65 mW and the threshold current of 15 mA with fundamental transverse mode operation are performed. The laser has high differential quantum efficiency of 70% at 20 °C and is stably operated at high temperatures; output power >20 mW at 80 °C. The dependence of the threshold current density on the doping impurity level of zinc in the active layer is also discussed.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Picosecond photoconducting Hertzian dipoles

D. H. Auston, K. P. Cheung, and P. R. Smith

Appl. Phys. Lett. 45, 284 (1984); http://dx.doi.org/10.1063/1.95174 (3 pages) | Cited 244 times

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The generation transmission, and detection of extremely rapid electromagnetic pulses have been achieved using fast photoconducting materials as time‐varying Hertzian dipoles. This approach, which has a measured time response of 1.6 ps, overcomes many of the limitations imposed by transmission line structures, and due to its jitter‐free behavior and open geometry is ideally suited for transient electromagnetic measurements of materials.
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06.60.Jn High-speed techniques (microsecond to femtosecond)
85.60.-q Optoelectronic devices
84.40.-x Radiowave and microwave (including millimeter wave) technology
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Epitaxial growth of BaF2 films onto PbSe and electronic properties of the interface

H. Zogg, W. Vogt, and H. Melchior

Appl. Phys. Lett. 45, 286 (1984); http://dx.doi.org/10.1063/1.95175 (3 pages) | Cited 9 times

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Insulating epitaxial BaF2 layers have been grown by vacuum deposition onto in situ grown (111) PbSe single crystal films. BaF2 was chosen as insulating material because of its ideal match in thermal expansion and lattice constant to PbSe. Analysis of metal‐insulator‐semiconductor capacitors fabricated from such structures revealed breakdown strengths up to 4 MV/cm at 77 K. Capacitance‐voltage curves followed theoretical expectations from accumulation to inversion without hysteresis. Interface state densities are of order 1012 cm−2 eV−1 and lifetimes estimated to be in the picosecond range.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.60.Gz Photodetectors (including infrared and CCD detectors)

Observed circuit limits to time resolution in correlation measurements with Si‐on‐sapphire, GaAs, and InP picosecond photoconductors

R. B. Hammond, N. G. Paulter, and R. S. Wagner

Appl. Phys. Lett. 45, 289 (1984); http://dx.doi.org/10.1063/1.95176 (3 pages) | Cited 11 times

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We report cross‐correlation measurements of the response of photoconductor pulsers and sampling gates excited by a femtosecond laser. The photoconductors were fabricated in microstrip transmission line structures on Si‐on‐sapphire, semi‐insulating GaAs, and semi‐insulating InP wafers. The photoconductor sampling gates were ion beam damaged to produce short carrier lifetimes (<3 ps in one case). Damage was introduced with 6 MeV 20Ne on the Si‐on‐sapphire, 2 MeV 2H on the GaAs, and 2 MeV 4He on the InP. Doses in the range 1012–1015 cm−2 were used. Our results show circuit limits to the time resolution in correlation measurements from two sources: (a) RC time constants due to photoconductor gap capacitance and transmission line characteristic impedance and (b) dispersion in microstrip transmission lines.
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85.60.Dw Photodiodes; phototransistors; photoresistors
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.80.Jh Ion radiation effects

Electron and hole ionization coefficients in (100) oriented Ga0.33In0.67As0.70P0.30

Fukunobu Osaka, Takashi Mikawa, and Takao Kaneda

Appl. Phys. Lett. 45, 292 (1984); http://dx.doi.org/10.1063/1.95177 (2 pages) | Cited 4 times

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The impact ionization coefficients for electrons and holes in (100) oriented Ga0.33In0.67As0.70P0.30 whose band gap is 0.92 eV have been obtained from photomultiplication measurements on a Zn diffused p+n abrupt junction having a donor concentration of 2×1016 cm−3. It has been shown that the ionization coefficient for electrons is larger than that for holes by a factor of 1.5 over the electric field range from 3.3×105 to 4.3×105 V/cm.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.De Semiconductor-device characterization, design, and modeling

Temperature dependence of the electron mobility in GaAs‐GaAlAs heterostructures

E. E. Mendez, P. J. Price, and M. Heiblum

Appl. Phys. Lett. 45, 294 (1984); http://dx.doi.org/10.1063/1.95178 (3 pages) | Cited 102 times

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We have studied the temperature dependence of the mobility of two‐dimensional electron gases formed at the interface of high‐quality GaAs‐GaAlAs heterostructures, focusing on the temperature range 4–40 K. The inverse mobility is shown to increase linearly with temperature, with a slope which increases with the electron density and is independent of the zero‐temperature mobility. The results are consistent with a theoretical model for the acoustic‐phonon mobility that includes screening, indicating that the temperature dependence in high mobility GaAs‐GaAlAs structures is dominated by phonons rather than ionized impurities. A good agreement between theory and experiment is found using a value of 13.5 eV for the deformation potential of GaAs.
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73.25.+i Surface conductivity and carrier phenomena
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Electromechanical and metallurgical properties of liquid‐infiltration Nb‐Ta/Sn multifilamentary superconductor

J. W. Ekin and M. Hong

Appl. Phys. Lett. 45, 297 (1984); http://dx.doi.org/10.1063/1.95179 (3 pages) | Cited 3 times

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Data are presented on the strain dependence of the critical current and critical field of Nb‐Ta/Sn superconductors fabricated by the liquid Sn infiltration process. The results show that liquid infiltrated Nb‐Ta/Sn superconductors have several significant advantages over bronze‐process Nb/Sn super conductors: an overall Jc that is 3–10 times higher for magnetic fields in the range 13–20 T, an irreversible (damage) strain limit twice as large, and a Jc elastic‐strain sensitivity less than half as large at fields above ∼16 T. These improved properties are attributed to several unique characteristics of the liquid infiltration process: a tough Nb‐Ta matrix, fine equiaxial A15 grains, and a uniform stoichiometric Sn concentration.
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74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
81.05.Bx Metals, semimetals, and alloys
62.20.-x Mechanical properties of solids

Electron acceleration by laser driven plasma waves in inhomogeneous plasmas

Youichi Takada, Noboru Nakano, and Hiroto Kuroda

Appl. Phys. Lett. 45, 300 (1984); http://dx.doi.org/10.1063/1.95180 (3 pages) | Cited 1 time

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A new method of electron acceleration by laser driven plasma waves is proposed. The method takes advantage of the phase matching between injected electrons and plasma waves. The phase of electrons in electrostatic waves can be controlled by changing the plasma electron density spatially along the direction of electron propagation. From numerical results, by assuming 1.05‐μm, 30‐ps laser pulse with 1017 W/cm2 which is attainable today, it is shown that electrons are successfully accelerated from 1 MeV to 1 GeV in a distance of 18 m. It is also numerically shown that the phase stability is as good as that of conventional linacs.
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52.75.Di Ion and plasma propulsion
52.35.Fp Electrostatic waves and oscillations (e.g., ion-acoustic waves)
41.60.-m Radiation by moving charges
29.20.-c Accelerators
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