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15 Aug 1984

Volume 45, Issue 4, pp. 305-480

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Theoretical evaluation of electron‐beam‐excited KrF lasers using argon‐free mixtures of one atmosphere

Fumihiko Kannari, Akira Suda, Minoru Obara, and Tomoo Fujioka

Appl. Phys. Lett. 45, 305 (1984); http://dx.doi.org/10.1063/1.95271 (3 pages) | Cited 12 times

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The output performance of the electron‐beam‐excited KrF laser operating at one atmosphere is theoretically analyzed because the KrF laser at one atmosphere can greatly reduce the design constraints on the large laser windows and the electron‐beam pressure foils in a huge laser system as the inertial confinement fusion energy driver. The KrF laser using the atmospheric pressure, argon‐free laser mixture is found to operate with an intrinsic laser efficiency as high as that of high‐pressure, aregon‐diluted mixtures. This is because three‐body collisional quenching is not a detrimental energy‐loss channel for the atmospheric pressure operation. By using higher excitation rate and shorter excitation pulse width pumping, higher intrinsic laser efficiency than conventional, argon‐diluted, high‐pressure mixtures is found to be attainable. Moreover, the specific laser energy (28 J/l, for 1‐atm Kr/F2 mixtures pumped by an electron beam of 100 ns, 600 keV, and 150 A/cm2) is comparable to that of two‐atm, argon‐rich laser gas mixtures under the same excitation condition.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Generation of relativistic photoelectrons induced by excimer laser irradiation

Y. Kawamura, K. Toyoda, and M. Kawai

Appl. Phys. Lett. 45, 307 (1984); http://dx.doi.org/10.1063/1.95272 (3 pages) | Cited 30 times

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For the first time, photoelectrons from a metal surface irradiated by a pulsed excimer laser were accelerated to relativistic energy. The energy, the current density, and the pulse duration of the accelerated photoelectrons were 0.41 MeV, 0.5 A/cm2, and 20 ns, respectively.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
79.20.Ds Laser-beam impact phenomena

AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate

T. H. Windhorn, G. M. Metze, B‐Y. Tsaur, and John C. C. Fan

Appl. Phys. Lett. 45, 309 (1984); http://dx.doi.org/10.1063/1.95273 (3 pages) | Cited 46 times

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AlGaAs double‐heterostructure diode lasers have been fabricated for the first time on a monolithic GaAs/Si substrate. The heterostructure was prepared by growth of a series of GaAs and AlGaAs layers on a Ge‐coated Si wafer. For pulsed operation at 77 K the lowest threshold current was 260 mA, the highest power output was 1.8 mW per facet, and the highest differential quantum efficiency was 1.2%.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

High‐speed analog and digital modulation of 1.51‐μm wavelength, three‐channel buried crescent InGaAsP lasers

G. Eisenstein, U. Koren, R. S. Tucker, B. L. Kasper, A. H. Gnauck, and P. K. Tien

Appl. Phys. Lett. 45, 311 (1984); http://dx.doi.org/10.1063/1.95274 (3 pages) | Cited 5 times

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The microwave modulation characteristics of 300‐μm‐long, 1.51‐μm wavelength, three‐channel buried crescent lasers fabricated on semi‐insulating InP substrates have been studied. A small‐signal bandwidth of 5.7 GHz has been obtained and digital modulation with pseudorandom sequences at 2 and 4 Gb/s has been demonstrated.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

AgGaS2 infrared parametric oscillator

Yuan Xuan Fan, R. C. Eckardt, R. L. Byer, R. K. Route, and R. S. Feigelson

Appl. Phys. Lett. 45, 313 (1984); http://dx.doi.org/10.1063/1.95275 (3 pages) | Cited 54 times

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We report the first operation of an optical parametric oscillator in a chalcopyrite crystal, AgGaS2. Tuning from 1.4 to 4.0 μm is demonstrated for 1.06‐μm Nd:yttrium aluminum garnet pumping. The potential tuning range extends to the 12‐μm transparency limit of the crystal.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.-e Optical elements, devices, and systems
78.20.-e Optical properties of bulk materials and thin films

11‐GHz direct modulation bandwidth GaAlAs window laser on semi‐insulating substrate operating at room temperature

K. Y. Lau, N. Bar‐Chaim, I. Ury, and A. Yariv

Appl. Phys. Lett. 45, 316 (1984); http://dx.doi.org/10.1063/1.95276 (3 pages) | Cited 14 times

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We have demonstrated a direct modulation bandwidth of up to 11 GHz in a window GaAlAs buried heterostructure laser fabricated on a semi‐insulating substrate, operating at room temperature.
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42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.55.Px Semiconductor lasers; laser diodes

Spectral characteristics of (GaAl)As diode lasers at 1.7 K

J. Harrison and A. Mooradian

Appl. Phys. Lett. 45, 318 (1984); http://dx.doi.org/10.1063/1.95253 (3 pages) | Cited 8 times

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The spectral broadening as a function of output power for transverse junction stripe (GaAl)As diode lasers has been measured at 1.7 K. The power‐independent linewidth was observed to be about 30 MHz in reasonable agreement with the model involving electron number fluctuations in the device.
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42.55.Px Semiconductor lasers; laser diodes

16–21‐μm line‐tunable NH3 laser produced by two‐step optical pumping

H. D. Morrison, J. Reid, and B. K. Garside

Appl. Phys. Lett. 45, 321 (1984); http://dx.doi.org/10.1063/1.95254 (3 pages) | Cited 5 times

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A novel two‐step optical pumping technique is described for creating line‐tunable laser emission in the 2ν2–ν2 band of NH3. Two TE CO2 lasers operating on the R(30) and P(24) 9‐μm transitions are used to pump the sR(5,0) and 2sR(4,3) NH3 transitions respectively, and lasing is observed on 11 different NH3 lines having wavelengths from 16 to 21 μm. This pumping technique relies on rapid rotational thermalization in the vibrational levels to enhance the pump absorptions and distribute the population inversion. The possibility of producing cw line‐tunable operation on these transitions is discussed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
33.80.Be Level crossing and optical pumping
33.20.Ea Infrared spectra

Polarization‐dependent gain in GaAs/AlGaAs multi‐quantum‐well lasers: Theory and experiment

M. Yamada, S. Ogita, M. Yamagishi, K. Tabata, N. Nakaya, M. Asada, and Y. Suematsu

Appl. Phys. Lett. 45, 324 (1984); http://dx.doi.org/10.1063/1.95255 (2 pages) | Cited 15 times

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Polarization‐dependent lasing gain in GaAs/AlGaAs multi‐quantum‐well lasers is theoretically calculated and experimentally determined. The dipole moment representing the electron transition is calculated based on the k⋅P perturbation method. Gain broadening due to the intraband relaxation of electron wave is also taken into account. Experimentally measured gain profiles of TE and TM modes agree well with the theoretical results.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
75.20.Ck Nonmetals

In‐plane scattering in titanium‐diffused LiNbO3 optical waveguides

M. N. Armenise, M. De Sario, C. Canali, P. Franzosi, J. Singh, R. H. Hutchins, and R. M. De La Rue

Appl. Phys. Lett. 45, 326 (1984); http://dx.doi.org/10.1063/1.95256 (3 pages) | Cited 3 times

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In‐plane scattering in Ti‐indiffused LiNbO3 optical waveguides arises from several possible sources. The importance of the different sources changes as a function of the total diffusion time used in waveguide fabrication. This letter describes detailed observations of different sources and shows that at long diffusion times the in‐plane scattering is dominated by an increasing density of misfit dislocations growing in the waveguiding layer.
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42.79.Gn Optical waveguides and couplers
66.30.J- Diffusion of impurities
75.20.Ck Nonmetals
68.55.-a Thin film structure and morphology

High‐power, low‐threshold, single‐mode GaInAsP/InP laser by low‐temperature, single‐step liquid phase epitaxy

H. Horikawa, K. Imanaka, A. Matoba, Y. Kawai, and M. Sakuta

Appl. Phys. Lett. 45, 328 (1984); http://dx.doi.org/10.1063/1.95257 (3 pages) | Cited 1 time

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A GaInAsP/InP laser (λg=1.3 μm) on grooved substrate with a lens‐shaped active layer, in which the current blocking junction is grown exclusively outside of the groove, has been fabricated by single‐step liquid phase epitaxy. This technique is based on the preferential growth effects of InP and GaInAsP on the (100) oriented substrate with [011] directed grooves. Under cw operation, low threshold current (38 mA), high output power (40 mW/facet), and high external differential quantum efficiency (56%) are accomplished; fundamental transverse mode operation up to an output of 30 mW/facet is verified. These successful characteristics are realized by the introduction of the inner current confining layer.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology
81.10.Fq Growth from melts; zone melting and refining

λ≊1.5 μm InGaAsP ridge lasers grown by gas source molecular beam epitaxy

H. Temkin, M. B. Panish, R. A. Logan, and J. P. van der Ziel

Appl. Phys. Lett. 45, 330 (1984); http://dx.doi.org/10.1063/1.95258 (3 pages) | Cited 5 times

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Separate confinement heterostructure wafers grown by gas source molecular beam epitaxy have been used to prepare ridge waveguide lasers operating up to 50 °C. Laser threshold currents varied from 45 to 65 mA at room temperature and output powers up to 9 mW have been obtained with the external quantum efficiency of ∼36%. Gain profile measurements indicate excellent material uniformity. Frequency response flat to at least 2 GHz is consistent with the material free of interfacial traps or any capacitive shunt paths.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Second harmonic generation of 2‐methyl‐4‐nitroaniline by a neodymium: yttrium aluminum garnet laser with a tapered slab‐type optical waveguide

K. Sasaki, T. Kinoshita, and N. Karasawa

Appl. Phys. Lett. 45, 333 (1984); http://dx.doi.org/10.1063/1.95259 (2 pages) | Cited 14 times

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A thin single crystal of 2‐methyl‐4‐nitroaniline for second harmonic generation experiment is prepared by vapor phase growth. The crystal is used as a high‐index top layer on a tapered slab‐type waveguide. A Nd:yttrium aluminum garnet laser (1.064 μm) is guided as a fundamental wave. The phase match condition between the fundamental wave (the TE first wave) and the second harmonic wave (the TE second wave) is realized by coincidence of both propagation constants with translational adjustment of the thickness of the waveguide.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

High‐gain soft‐x‐ray‐pumped photoionization laser in zinc vapor

H. Lundberg, J. J. Macklin, W. T. Silfvast, and O. R. Wood

Appl. Phys. Lett. 45, 335 (1984); http://dx.doi.org/10.1063/1.95260 (3 pages) | Cited 8 times

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Large inversion densities in Zn+ have been produced by photoionizing inner‐shell d electrons with the broadband soft‐x‐ray flux from a 1.06‐μm laser‐produced plasma. This pumping scheme is an effective technique for rapidly producing large population densities (5×1013 cm−3) in the 3d9 4s2 2D5/2 upper laser level. These large densities (a) produced laser action on a two‐electron transition from the d‐electron manifold to the outer‐electron manifold at 7478 Å, (b) allowed the isotope shifts on this relatively weak transition to be measured, and (c) may eventually be transferred to other high lying states in Zn+ to produce vacuum ultraviolet lasers.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
51.70.+f Optical and dielectric properties
32.80.Fb Photoionization of atoms and ions

Effect of active layer placement on the threshold current of 1.3‐μm InGaAsP etched mesa buried heterostructure lasers

N. K. Dutta, R. J. Nelson, R. B. Wilson, D. M. Maher, P. D. Wright, T. T. Sheng, P. S. D. Lin, and R. B. Marcus

Appl. Phys. Lett. 45, 337 (1984); http://dx.doi.org/10.1063/1.95261 (3 pages) | Cited 6 times

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The threshold current of InGaAsP etched mesa buried heterostructure (EMBH) lasers is strongly influenced by the position of the active layer in the etched mesa. Transmission electron microscopy results are presented which show the presence of a thin planar disorder along the etched 111A interface. Nonradiative recombination of carriers is believed to be responsible for the increased threshold current of EMBH lasers whose active region is bounded by 111A interface. Lasers with threshold current as low as 14 mA at 30 °C have been fabricated by proper placement of the active layer and by optimizing layer thicknesses and doping levels.
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42.55.Px Semiconductor lasers; laser diodes

Experimental study of an SF6 Brillouin amplifier pumped by KrF laser radiation

R. Fedosejevs, I. V. Tomov, D. C. D. McKen, and A. A. Offenberger

Appl. Phys. Lett. 45, 340 (1984); http://dx.doi.org/10.1063/1.95262 (3 pages) | Cited 4 times

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Experimental measurements are presented of the gain for a backward Brillouin amplifier using SF6 gas, in the pressure range of 3–10 atm, pumped by KrF laser radiation. A small signal gain of 6×10−4 cm MW−1, pump depletion of 20%, and an intensity gain of 2.5 have been demonstrated.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Threshold analysis of cleaved‐coupled‐cavity lasers

William Streifer, David Yevick, Robert D. Burnham, and Thomas L. Paoli

Appl. Phys. Lett. 45, 343 (1984); http://dx.doi.org/10.1063/1.95263 (3 pages) | Cited 1 time

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We present results of a cleaved‐coupled‐cavity laser analysis which, in contrast to previous studies, incorporates all the following: (1) a model of the gain variation with pumping current and photon energy; (2) the refractive index dependence on the active region injection current; and (3) traveling wave equations for each laser segment. Based on this realistic formulation, we solve for the precise current required by one segment to attain threshold when the current in the other segment is specified for various gap spacings between the segments, and show that device behavior is very sensitive to that dimension. In addition, we calculate quantitatively the spectral tuning and previously unreported jumps from one extreme of the gain spectrum to the opposite extreme in particular current ranges.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.50.-p Quantum optics
42.55.Px Semiconductor lasers; laser diodes

Passive mode locking of a XeCl laser

T. Efthimiopoulos

Appl. Phys. Lett. 45, 346 (1984); http://dx.doi.org/10.1063/1.95264 (3 pages) | Cited 2 times

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Passive mode locking of a 20‐ns pulse duration XeCl laser was achieved. A modulation of 90% and less than 2‐ns pulses are reported using Coumarin 1 and Auramine‐0 dyes as saturable absorbers.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Room‐temperature pulsed oscillation of GaAlAs/GaAs surface emitting injection laser

K. Iga, S. Ishikawa, S. Ohkouchi, and T. Nishimura

Appl. Phys. Lett. 45, 348 (1984); http://dx.doi.org/10.1063/1.95265 (3 pages) | Cited 18 times

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We report the first room‐temperature pulsed oscillation of a GaAlAs/GaAs surface emitting injection laser. A ring electrode of which the outer/inner diameter is 20 μm/10 μm has been introduced to distinguish a mirror and Ohmic contact in order to increase the reflectivity. The threshold current was as low as 510 mA at room temperature under pulsed conditions. The cavity length was 7 μm and single longitudinal mode operation was achieved at λ=8740 Å against the temperature variation of 80 K.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

Optical levitation using single mode fibers and its application to self‐centering of microlenses

Jean‐Paul Pocholle, Jean Raffy, Yves Combemale, Michel Papuchon, G. Roosen, and M. T. Plantegenest

Appl. Phys. Lett. 45, 350 (1984); http://dx.doi.org/10.1063/1.95266 (3 pages) | Cited 1 time

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Optical levitation using single mode fibers has been experimentally demonstrated. The use of fibers in levitation experiments presents obvious advantages, in particular, concerning the case with which complicated optical paths can be realized without additional optical components. In addition the microsphere can be accurately deposited on the fiber end by simply controlling the optical guided power. This technique has been used to position microlenses self‐centered on the guided mode to improve the coupling efficiency between a semiconductor laser and a single mode fiber.
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42.81.-i Fiber optics
42.79.Bh Lenses, prisms and mirrors
42.79.-e Optical elements, devices, and systems
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)

Spectral linewidth of gain‐ and index‐guided InGaAsP semiconductor lasers

W. Elsässer and E. O. Göbel

Appl. Phys. Lett. 45, 353 (1984); http://dx.doi.org/10.1063/1.95267 (3 pages) | Cited 5 times

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We report measurements of the spectral linewidth of InGaAsP lasers emitting at 1.3 μm as a function of the optical mode power. The spectral linewidth is of the order of 0.1–2.0 GHz for both gain‐ and index‐guided lasers. The linewidth can be described by a modified Schawlow–Townes formula taking into account a power‐independent contribution to the linewidth. This power‐independent contribution is attributed to mode intensity fluctuations due to mode coupling.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Enhancement of the specific output energy of an electron‐beam pumped KrF laser by using Ne as the main buffer gas

T. Gerber, P. J. M. Peters, H. M. J. Bastiaens, and W. J. Witteman

Appl. Phys. Lett. 45, 356 (1984); http://dx.doi.org/10.1063/1.95268 (2 pages)

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Optimization of a Ne/Ar/Kr/F2 gas mixture with respect to maximum KrF laser output has been performed. As an excitation source a transverse electron beam with a pulse length of 10 ns was used. The laser output obtained with a typical Ne/Ar/Kr/F2 mixture containing mainly Ne was found to increase linearly with Ne partial pressure. At a pressure of 14 bar the laser output energy exceeds the one achieved with an optimized Ar/Kr/F2 mixture by a factor of 4.5.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Pearlescent suspension display concepts

B. D. Bostwick and M. M. Labes

Appl. Phys. Lett. 45, 358 (1984); http://dx.doi.org/10.1063/1.95269 (2 pages) | Cited 2 times

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Pearlescent plates whose density is matched to a solvent medium form stable suspensions in which the plate orientation can be switched by magnetic and electric fields. The time frame for these effects is of the order of seconds to minutes, the visual optical effect being a change from a strong reflective pearl essence to a transparent state.
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78.20.Jq Electro-optical effects
78.20.Ls Magneto-optical effects
42.79.-e Optical elements, devices, and systems
85.60.Pg Display systems

Optical guided‐wave gallium arsenide monolithic interferometer

J. P. Donnelly, N. L. DeMeo, G. A. Ferrante, K. B. Nichols, and F. J. O’Donnell

Appl. Phys. Lett. 45, 360 (1984); http://dx.doi.org/10.1063/1.95270 (3 pages) | Cited 4 times

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A guided‐wave interferometer capable of modulating 1.3‐μm radiation via the electro‐optic effect has been fabricated in GaAs. The interferometer uses three‐guide couplers as the input and output sections and single‐mode slab‐coupled p+‐n−‐n+ rib waveguides fabricated by means of Be‐ion implantation for the two active arms. An extinction of ≊14.5 dB of the output signal from the center guide is obtained with 22 V applied to one arm of the interferometer. Interferometers of this type should be capable of large signal modulation out to 5–10 GHz.
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07.60.Ly Interferometers
78.20.Jq Electro-optical effects
42.60.Fc Modulation, tuning, and mode locking

High‐power room‐temperature CO laser

Tsunenori Arai and Makoto Kikuchi

Appl. Phys. Lett. 45, 362 (1984); http://dx.doi.org/10.1063/1.95277 (3 pages) | Cited 6 times

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A high‐power room‐temperature CO laser using a high convective‐flow speed is described in this paper. With a simple conventional laser tube, a maximum laser output of 38.8 W/m and a maximum efficiency of 20.7% were obtained.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers
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