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1 Sep 1984

Volume 45, Issue 5, pp. 485-591

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Embedded‐mirror semiconductor laser

W. D. Laidig, J. W. Lee, and P. J. Caldwell

Appl. Phys. Lett. 45, 485 (1984); http://dx.doi.org/10.1063/1.95309 (3 pages) | Cited 9 times

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Data are presented demonstrating the operation of a current‐injection laser diode with embedded reflectors instead of etched or cleaved facets. The laser structure, grown by molecular beam epitaxy, uses AlAs‐GaAs superlattices SL’s in place of conventional AlxGa1−xAs cladding layers. The sample is patterned, etched, and Zn diffused to selectively disorder the SL cladding layers producing a ∼200×∼100 μm rectangular laser cavity embedded in the surrounding AlxGa1−xAs. Following Si3N4 deposition and metallization, the diodes are cut (not cleaved) with intentionally damaged edges. These devices operate as lasers (77 K, pulsed operation) with a mode spacing corresponding to either the ∼100‐μm or the ∼200‐μm cavity length formed by the selective interdiffusion of the SL cladding layer. This embedded‐mirror laser structure may be useful in the development of optical integrated circuits by allowing semiconductor lasers to be monolithically integrated with other optical devices.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.82.-m Integrated optics
81.65.-b Surface treatments

Single quantum well lead‐europium‐selenide‐telluride diode lasers

Dale L. Partin

Appl. Phys. Lett. 45, 487 (1984); http://dx.doi.org/10.1063/1.95310 (3 pages) | Cited 30 times

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It is desirable to increase the operating temperature of long wavelength lead‐chalcogenide diode lasers to simplify cooling system requirements. Recently, double heterostructure Pb1−xEuxSeyTe1−y diode lasers (grown by molecular beam epitaxy) operated up to 147 K cw (180 K pulsed). The output photon energy of these devices is linear with x in the wavelength range 6.6– 2.7 μm. The growth of single quantum well lead‐chalcogenide diode lasers is now reported for the first time. These devices had PbTe quantum wells with PbEuSeTe confinement layers. The width of the quantum wells, Lz, was varied from 300 to 250 Å. Strong quantum effects are observed for Lz ≲ 1200 Å because of the small carrier masses (me∼mh∼0.04mo ). The shift in laser emission energy is in approximate agreement with that calculated from a finite square well potential. At low temperatures (≲100 K), these lasers appear to operate on transitions between n=1 states in the conduction and valence bands at threshold. Transitions between the n=2 states require a higher current which decreases with increasing temperature until the laser switches to the n=2 transition at threshold. The threshold current then increases relatively slowly with temperature, yielding cw operation up to 174 K (at 4.41‐μm wavelength), and pulsed operation up to 241 K (at 4.01 μm). These are the highest operating temperatures ever reported for lead‐chalcogenide diode lasers, and increases their potential usefulness for spectroscopic applications and for long wavelength fiber optics communications.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices
85.30.De Semiconductor-device characterization, design, and modeling

Integrated‐optical frequency translator with stripe waveguide

F. Heismann and R. Ulrich

Appl. Phys. Lett. 45, 490 (1984); http://dx.doi.org/10.1063/1.95311 (3 pages) | Cited 8 times

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We demonstrate electro‐optic frequency shifting of laser light (λ=723 nm), electronically tunable through more than ± 1 MHz, in a LiNbO3: Ti single‐mode stripe waveguide, using polarization conversion at a traveling index grating, driven by two phase‐quadrature voltages of ∼27 V at the offset frequency. The optical carrier and undesired sidebands are suppressed better than 30 dB by polarizers, conversion efficiency ≥70%, device length 4.5 mm, optical bandwidth ∼1 nm; direct butt coupling to fibers is possible.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators

Subpicosecond electro‐optic sampling using coplanar strip transmission lines

G. A. Mourou and K. E. Meyer

Appl. Phys. Lett. 45, 492 (1984); http://dx.doi.org/10.1063/1.95312 (3 pages) | Cited 12 times

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Electrical sampling with a temporal resolution of less than 500 fs has been achieved using coplanar transmission lines on electro‐optic substrates. The improved performance over the previously demonstrated balanced stripline is due to the reduced dimensions, i.e., distance between the electrodes and width of the electrodes, achievable with photolithographic technique. By further reducing the line dimensions to 10–20‐μm range, this technique makes the temporal resolution of electrical waveforms in the range of 100 fs possible.
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84.40.Az Waveguides, transmission lines, striplines
07.05.Hd Data acquisition: hardware and software
07.05.Kf Data analysis: algorithms and implementation; data management
07.05.Rm Data presentation and visualization: algorithms and implementation

Use of spatial time‐division repetition rate multiplication of mode‐locked laser pulses to generate microwave radiation from optoelectronic switches

A. Mooradian

Appl. Phys. Lett. 45, 494 (1984); http://dx.doi.org/10.1063/1.95313 (3 pages) | Cited 10 times

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Multiplication of the pulse repetition rate of a mode‐locked laser beam using an all‐optical technique has been used to generate microwave radiation from an avalanche photodiode as well as from an optoelectronic switch.
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85.60.-q Optoelectronic devices
84.32.Dd Connectors, relays, and switches
85.60.Dw Photodiodes; phototransistors; photoresistors

Laser cathode ray tube operation at room temperature

U. Levy, R. A. Logan, and Y. Niv

Appl. Phys. Lett. 45, 497 (1984); http://dx.doi.org/10.1063/1.95314 (3 pages) | Cited 15 times

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Laser cathode ray tube operation has been demonstrated at room temperature with GaAs/GaAlAs double heterostructure targets. An external efficiency of 2.7% was achieved with a 20‐A/cm2 beam of 30‐keV electrons. Reasonable uniform emission over a 2 mm×2 mm area was observed.
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84.47.+w Vacuum tubes

Reconstruction of electrodes and pole pieces from optimized axial field distributions of electron and ion optical systems

M. Szilagyi

Appl. Phys. Lett. 45, 499 (1984); http://dx.doi.org/10.1063/1.95315 (3 pages) | Cited 6 times

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The solution of the electrode and pole piece reconstruction problem is given. The axial potential or flux density distribution is sought in the form of a simple curve with a continuous second derivative. The reconstruction procedure then is extremely simple and quite accurate. As an example the electrode system for an optimized electrostatic lens is shown.
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29.27.-a Beams in particle accelerators
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
02.60.Ed Interpolation; curve fitting
02.70.-c Computational techniques; simulations

Detuned loading in coupled cavity semiconductor lasers—effect on quantum noise and dynamics

Kerry Vahala and Amnon Yariv

Appl. Phys. Lett. 45, 501 (1984); http://dx.doi.org/10.1063/1.95316 (3 pages) | Cited 11 times

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We derive the modulation and noise properties of a semiconductor laser consisting of an active cavity loaded by a passive cavity. The results indicate that under certain conditions the direct modulation bandwidth can be doubled with simultaneous phase noise reduction as compared to a conventional laser.
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42.55.Px Semiconductor lasers; laser diodes
42.50.-p Quantum optics
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Thickness variations in x‐ray filters and laser targets

R. R. Whitlock and J. A. Sprague

Appl. Phys. Lett. 45, 504 (1984); http://dx.doi.org/10.1063/1.95294 (3 pages) | Cited 2 times

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Thickness variation of visually opaque foils used as x‐ray and ultraviolet (XUV) photon filters and photocathodes can introduce anomalies in recorded intensities, images, and spectral line profiles. In laser fusion studies, mass thickness variations of laser‐accelerated foils can hydrodynamically disrupt their motion. We have used transmitted electrons to obtain quantitative local (area ≤1 μm2) measurements of mass thickness as well as qualitative images of mass thickness variations in free‐standing Be, C, and Al foils presently in use in the above areas of investigation. Substantial mass thickness variations, up to a factor of 4 for Al and 1.3 for Be, were found which can produce considerable modulations in transmitted XUV photon intensity.
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78.70.Dm X-ray absorption spectra
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
06.30.Dr Mass and density

Single longitudinal mode operation of an XeCl laser

Thomas J. Pacala, I. Stuart McDermid, and James B. Laudenslager

Appl. Phys. Lett. 45, 507 (1984); http://dx.doi.org/10.1063/1.95295 (3 pages) | Cited 11 times

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Single longitudinal mode output from a directly tuned, long pulse, magnetically switched XeCl laser is reported for the first time. Mode control was achieved using spatial aperatures and intracavity etalons. The narrow bandwidth laser output was diffraction limited with an optical pulse width of 30 ns, which would yield a transform limited bandwidth of 30 MHz.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Pulsed‐laser generation of ultrashort acoustic pulses: Application for thin‐film ultrasonic measurements

A. C. Tam

Appl. Phys. Lett. 45, 510 (1984); http://dx.doi.org/10.1063/1.95296 (3 pages) | Cited 23 times

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We demonstrate nondestructive optoacoustic generation and detection of acoustic pulses of 1‐ns duration in condensed matter. Such optoacoustic pulses are at least one order of magnitude shorter than those previously reported. These narrow acoustic pulses find new application for thin‐film pulse measurements, which are not possible with conventional transducer techniques. Round trip echo times are measured to 1% accuracy for stainless steel films of 12‐μm thickness. This provides a new high accuracy thickness measurement in a pulsed mode. Ultrasonic attenuation for the narrow acoustic pulses is very large and is also measured.
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43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
43.35.Ns Acoustical properties of thin films
79.20.Ds Laser-beam impact phenomena

Anode heating in an intense ion beam diode with a CO2 laser

N. Camarcat, A. Devin, C. Peugnet, and C. Patou

Appl. Phys. Lett. 45, 513 (1984); http://dx.doi.org/10.1063/1.95297 (3 pages)

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In order to accelerate intense ion beams, we heat the anode of a pinch‐reflex diode with a CO2 laser. At laser power densities of 1010 W/cm2 over a 2‐mm focal spot, we demonstrate that gap closure is avoided and that ion efficiency is increased by at least a factor 3 over diode operation without the laser.
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52.75.Di Ion and plasma propulsion
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative

Photothermal spectroscopy of weakly absorbing samples using a thermal wave phase shifter

H. Coufal

Appl. Phys. Lett. 45, 516 (1984); http://dx.doi.org/10.1063/1.95298 (3 pages) | Cited 28 times

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The concept of a thermal wave phase shifter for photothermal studies of weakly absorbing samples is described. Both sample and reference are excited simultaneously, but their respective photothermal signals reach the detector subsequently. Depending on the phase shift photothermal absorption or transmission spectra can be recorded readily with the same sample. The versatility of this technique is demonstrated by spectroscopic studies of neodymium oxide doped poly(methyl methacrylate) film. At energy fluences in the order of 10 mJ/cm2 sensitivities of 1014 molecules/cm2 are achieved with conventional, unstabilized light sources. The quantum yield for nonradiative decay is determined to be 90% throughout the entire visible spectrum.
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05.70.Ce Thermodynamic functions and equations of state
79.20.Ds Laser-beam impact phenomena
77.55.-g Dielectric thin films
77.70.+a Pyroelectric and electrocaloric effects

Surface morphology of epitaxial CaF2 films on Si substrates

R. W. Fathauer and L. J. Schowalter

Appl. Phys. Lett. 45, 519 (1984); http://dx.doi.org/10.1063/1.95299 (3 pages) | Cited 52 times

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The surfaces of epitaxial CaF2 layers grown on (100) and (111) Si by molecular beam epitaxy have been studied using scanning electron microscopy. The (111) surface exhibits small triangular hillocks, while the (100) surface exhibits a columnar structure. This latter structure can be accounted for by the prohibitively large free energy of the (100) surface. A dipole moment exists perpendicular to this surface which causes the electrostatic energy to diverge. This phenomenon explains the inferior (100) growth as compared to (111) and has important implications for possible applications of group II‐A fluoride/semiconductor epitaxial structures.
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85.30.Kk Junction diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Rs Electrical and magnetic properties related to treatment conditions

Evidence that the 0.635‐eV luminescence band in semi‐insulating GaAs is not EL2 related

L. Samuelson, P. Omling, and H. G. Grimmeiss

Appl. Phys. Lett. 45, 521 (1984); http://dx.doi.org/10.1063/1.95300 (3 pages) | Cited 11 times

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By utilizing the quenching effect of the deep EL2 defect in semi‐insulating GaAs in different optical measurements, it has been possible to show that the 0.635‐eV photoluminescence band is not related to EL2. The previously observed ‘‘EL2 behavior’’ of this luminescence band is shown to be only an indirect effect where the EL2 level acts as an intermediate step in the excitation process. Evidence is also given that the sharp below‐band‐gap photoluminescence excitation peak (1.50 eV) which has been regarded as an EL2 feature is actually not related to EL2. A new photoluminescence excitation band with a threshold at ∼1.1 eV is also observed.
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78.40.Fy Semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Epitaxial growth of CrSi2 on (111)Si

F. Y. Shiau, H. C. Cheng, and L. J. Chen

Appl. Phys. Lett. 45, 524 (1984); http://dx.doi.org/10.1063/1.95301 (3 pages) | Cited 34 times

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Epitaxial CrSi2 has been successfully grown on (111)Si. Substrate heating at 300 or 400 °C during Cr deposition was found to be more effective than two‐step annealing in promoting the growth and improving the quality of epitaxial CrSi2. The best epitaxy was obtained when sample substrates were heated at 300 or 400 °C followed by 1000–1100 °C annealing for 1 h. The orientation relationships were found to be (0001) CrSi2//(111)Si, (2240)CrSi2//(224)Si, (2020)CrSi2//(202)Si, and [1213]CrSi2//[101]Si. Dislocations present in the regular interfacial dislocation network were found to be of edge or 60° type with (1)/(6) <112> Burgers vectors. The average dislocation spacings were measured to be 270–320 Å. The discrepancy of the measured and theoretically expected value of dislocation spacing was attributed to the difference in the thermal expansion coefficients of CrSi2 and Si.
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68.55.-a Thin film structure and morphology
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Formation of titanium silicides by fast radiative processing

C. S. Wei, J. Van der Spiegel, J. J. Santiago, and L. E. Seiberling

Appl. Phys. Lett. 45, 527 (1984); http://dx.doi.org/10.1063/1.95302 (2 pages) | Cited 8 times

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Titanium silicide films were grown under roughing vacuum on single crystal silicon wafers using high power quartz‐halogen tungsten lamps to provide the thermal driving force. After processing for various time intervals, ranging from 5 to 25 s, the samples were characterized by measuring their sheet resistance. Major phases were detected with x‐ray diffractometry. Elemental composition and film thickness were measured using Rutherford backscattering and Auger electron spectroscopy. These techniques consistently indicated that silicide formation was completed after 10–12 seconds processing time. The quality of these films and its potential usefulness are evidenced by their low resistivity of 21 μΩ cm.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Effects of ion‐implanted C on the microstructure and surface mechanical properties of Fe alloys implanted with Ti

D. M. Follstaedt, J. A. Knapp, L. E. Pope, F. G. Yost, and S. T. Picraux

Appl. Phys. Lett. 45, 529 (1984); http://dx.doi.org/10.1063/1.95303 (3 pages) | Cited 38 times

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See Also: Erratum

Show Abstract
The microstructural and tribological effects of ion implanting C into Ti‐implanted, Fe‐based alloys are examined and compared to the influence of C introduced by vacuum carburization during Ti implantation alone. The amorphous surface alloy formed by Ti implantation of pure Fe increases in thickness when additional C is implanted at depths containing Ti but beyond the range of carburization. Pin‐on‐disc tests of 15‐5 PH stainless steel show that implantation of both Ti and C reduces friction significantly under conditions where no reduction is obtained by Ti implantation alone; wear depths are also less when C is implanted. All available experimental results can be accounted for by consideration of the thickness and Ti concentration of the amorphous Fe‐Ti‐C alloy. The thicker amorphous layer on samples implanted with additional C extends tribological benefits to more severe wear regimes.
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81.40.Pq Friction, lubrication, and wear
62.20.Qp Friction, tribology, and hardness
61.72.U- Doping and impurity implantation

Capless annealing of InP for metal‐insulator‐semiconductor field‐effect transistor applications

K. P. Pande, V. R. K. Nair, and O. Aina

Appl. Phys. Lett. 45, 532 (1984); http://dx.doi.org/10.1063/1.95304 (3 pages) | Cited 6 times

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A simple capless annealing process for post‐implantation annealing of InP material is described. The technique incorporates a simple boat design and uses InP+Sn as the source of phosphorus overpressure. Using this process, Si‐implanted (4×1012 cm−2 dose) InP layers show mobilities at room temperature and 77 K in the range of 3200 and ∼10 000 cm2/Vs, respectively. Dopant depth profiles with peak donor densities of 2×1017 cm−3 and minimal redistribution of impurities were obtained. Depletion‐mode InP metal‐insulator‐semiconductor field‐effect transistors fabricated with 4‐μm gate lengths using ion‐implanted channel and source‐drain regions, show channel mobilities of 2500 cm2/Vs.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
85.30.Tv Field effect devices
61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Molecular beam epitaxy of GaAs and AlGaAs on Si

B‐Y. Tsaur and G. M. Metze

Appl. Phys. Lett. 45, 535 (1984); http://dx.doi.org/10.1063/1.95305 (2 pages) | Cited 38 times

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Epitaxial layers of GaAs and AlxGa1−x As (0.2≤x≤0.5) have been grown directly on single‐crystal Si (100) substrates, without an intermediate Ge layer, by molecular beam epitaxy (MBE). To improve nucleation, after being chemically cleaned the Si substrates were preheated in the MBE system to reduce surface contamination and achieve ordered surface reconstruction prior to growth. Reflection electron diffraction, Rutherford backscattering channeling, and photoluminescence measurement were used to characterize the epitaxial layers. The AlGaAs layers were found to be superior to the GaAs layers.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
68.60.-p Physical properties of thin films, nonelectronic

Electroluminescence from a heterojunction bipolar transistor

J. R. Hayes, R. F. Leheny, H. Temkin, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 45, 537 (1984); http://dx.doi.org/10.1063/1.95306 (3 pages) | Cited 4 times

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Electroluminescence has been observed from a GaAlAs/GaAs heterojunction bipolar transistor. The absence of luminescence from the GaAlAs emitter confirms that compositional grading significantly enhances hole confinement. In addition, it is suggested that electroluminescence occurring from the radiative recombination of excess electrons in the base may cause significant cross talk between devices of an integrated circuit.
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85.30.Pq Bipolar transistors
78.60.Fi Electroluminescence

Influence of high‐temperature annealing on performance of edge‐defined film‐fed growth silicon ribbon solar cells

J. P. Kalejs and L. A. Ladd

Appl. Phys. Lett. 45, 540 (1984); http://dx.doi.org/10.1063/1.95307 (3 pages) | Cited 9 times

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Silicon ribbon with varying oxygen concentrations grown by the edge‐defined film‐fed growth technique has been annealed for periods of up to 1 h at 1200 °C prior to fabrication into solar cells. Low (<1×1016 atom/cc interstitial) oxygen content ribbon cell performance, which is characteristically depressed with respect to higher (∼5×1016 atom/cc interstitial) oxygen content ribbon, is improved by the anneal to levels approaching those observed in unannealed ribbon with the higher oxygen concentrations. The latter are essentially unaffected by the anneal. An explanation for ribbon cell property responses is proposed that is based on consideration of recombination effects associated with carbon microdefects.
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84.60.Jt Photoelectric conversion
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.jd Vacancies
61.72.jj Interstitials
72.40.+w Photoconduction and photovoltaic effects

Origin of hydrogen in amorphous silicon produced by glow discharge in Si2H6+D2 and Si2D6+H2

Osamu Kuboi, Masanori Hashimoto, Yoshifumi Yatsurugi, Hisao Nagai, Michi Aratani, Minoru Yanokura, Shigeki Hayashi, Isao Kohno, and Tadashi Nozaki

Appl. Phys. Lett. 45, 543 (1984); http://dx.doi.org/10.1063/1.95308 (3 pages) | Cited 4 times

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Hydrogenated amorphous silicon was grown from disilane by rf glow discharge. Deuterium (D) was used as a tracer gas in this investigation, in which two gas mixtures (Si2H6+D2 and Si2D6+H2) were employed. Amorphous silicon so produced was analyzed for 1H and D by Rutherford recoil measurement to determine whether these elements came from disilane or dilution gas. When the rf power is low, a much larger proportion of hydrogen atoms in disilane (1H in case of Si2H6, D in case of Si2D6) than in the dilution gas is found in the amorphous silicon. The exact reverse is true as the rf power becomes large.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.80.Hc Glow; corona

Origin of oriented crystal growth of radiantly melted silicon on SiO2

D. K. Biegelsen, L. E. Fennell, and J. C. Zesch

Appl. Phys. Lett. 45, 546 (1984); http://dx.doi.org/10.1063/1.95317 (3 pages) | Cited 9 times

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We demonstrate directly that {100} texturing of lamellae in radiantly melted silicon on SiO2 derives from precursor seeds in the as‐deposited solid film. The anisotropic interfacial free energy between crystalline silicon and SiO2 controls the orientation.
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81.10.Fq Growth from melts; zone melting and refining

Disorder of an AlxGa1−xAs‐GaAs superlattice by donor diffusion

K. Meehan, N. Holonyak, J. M. Brown, M. A. Nixon, P. Gavrilovic, and R. D. Burnham

Appl. Phys. Lett. 45, 549 (1984); http://dx.doi.org/10.1063/1.95318 (3 pages) | Cited 79 times

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The Si impurity is diffused (850 °C, 10 h, xj ∼2.4 μm) into 2.4 μm of AlxGa1−xAs‐GaAs (x≳0.6) superlattice (barrier LB ≊320 Å, quantum well Lz ≊280 Å) and disorders it into bulk‐crystal Alx′Ga1‐x′As (x′≳0.32). The as‐grown infrared gap superlattice is converted selectively to red gap bulk crystal and, where undiffused and not disordered, is still capable of continuous 300‐K photopumped laser operation at a threshold of 4×103 W/cm2 (or Jeq ∼1.7×103 A/cm2, 5145 Å pump photon).
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64.60.Cn Order-disorder transformations
66.30.J- Diffusion of impurities
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