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1 Sep 1984

Volume 45, Issue 5, pp. 485-591

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Uniformity characterization of semi‐insulating GaAs by cathodoluminescence imaging

A. K. Chin, R. Caruso, M. S. S. Young, and A. R. Von Neida

Appl. Phys. Lett. 45, 552 (1984); http://dx.doi.org/10.1063/1.95293 (3 pages) | Cited 17 times

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Miyazawa et al. [Appl. Phys. Lett. 43, 853 (1983)] have recently established a spatial correlation between variations in field‐effect transistor performance and nonuniformities in the cathodoluminescence (CL) efficiency of semi‐insulating (SI) GaAs substrates. In this study, we compare the CL uniformity of both Cr‐doped and undoped SI GaAs crystals grown by the liquid‐encapsulated Czochralski (LEC) technique with undoped SI crystals grown by the horizontal gradient freeze (HGF) technique. In contrast to the LEC crystals, HGF GaAs has extremely uniform CL characteristics which should result in uniform device performance.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
78.60.Hk Cathodoluminescence, ionoluminescence
81.10.Fq Growth from melts; zone melting and refining

Up conversion of luminescence via deep centers in high purity GaAs and GaAlAs epitaxial layers

Lucia G. Quagliano and Heinz Nather

Appl. Phys. Lett. 45, 555 (1984); http://dx.doi.org/10.1063/1.95319 (3 pages) | Cited 13 times

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Up‐converted band to band luminescence generated by photons with energy lower than the band gap has been observed in high purity GaAs and GaAlAs epitaxial layers as well as in undoped melt‐grown GaAs. This is explained by assuming a two‐step excitation process involving a deep center as intermediate state. Since ecah crystal investigated has shown this effect, we conclude that intrinsic defects in pure GaAs and GaAlAs crystals provide the deep levels necessary for the up conversion.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.At Metal and metallic alloys
81.40.Gh Other heat and thermomechanical treatments
64.60.My Metastable phases

Interface state density measurements with a modified C‐V technique

G. Gildenblat, J. M. Pimbley, and M. F. Cote

Appl. Phys. Lett. 45, 558 (1984); http://dx.doi.org/10.1063/1.95320 (2 pages) | Cited 1 time

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Interface states in the metal‐oxide‐semiconductor (MOS) system have a great influence on the electrical properties of MOS capacitors and field‐effect transistors. Several methods for measuring the density of these interface states within the forbidden band gap of silicon employ differential capacitance versus gate bias (C‐V) measurement on MOS capacitors. We present here a C‐V measurement technique utilizing the MOS transistor that extends the energy range of the high‐low frequency method to that of the low‐frequency technique.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Tv Field effect devices

Liquid phase epitaxial growth of (AlzGa1−z)xIn1−xAsyP1−y pentanary on (100)GaAs substrate using a two‐phase solution technique

Hideo Kawanishi and Takeshi Suzuki

Appl. Phys. Lett. 45, 560 (1984); http://dx.doi.org/10.1063/1.95321 (3 pages) | Cited 2 times

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Liquid phase epitaxy of (AlzGa1−z)xIn1−xAsyP1−y pentanary is reported for the first time. The pentanary of (Al0.05Ga0.95)0.55In0.45As0.07P0.93 is grown successfully on a (100) oriented GaAs substrate by liquid phase epitaxy using a two‐phase solution growth technique at Tg=845 °C. Existence of Al in the epitaxial layer is determined by x‐ray microanalyzer, x‐ray diffractometer, and photoluminescence. The growth conditions of the (AlGa)InAsP pentanary are also discussed.
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68.55.-a Thin film structure and morphology
81.10.Dn Growth from solutions

Deep‐ultraviolet induced wet etching of GaAs

D. V. Podlesnik, H. H. Gilgen, and R. M. Osgood

Appl. Phys. Lett. 45, 563 (1984); http://dx.doi.org/10.1063/1.95281 (3 pages) | Cited 42 times

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We report on deep‐ultraviolet (UV), light‐assisted wet etching of GaAs. The etching chemistry differs from that using visible wavelengths and all doping types of GaAs can be efficiently etched. The UV processing offers rapid etching at low, nonthermal laser intensities and permits very deep, vertical features to be made.
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81.65.-b Surface treatments
73.40.Mr Semiconductor-electrolyte contacts

Recombination enhanced defect annealing in n‐InP

J. L. Benton, M. Levinson, A. T. Macrander, H. Temkin, and L. C. Kimerling

Appl. Phys. Lett. 45, 566 (1984); http://dx.doi.org/10.1063/1.95282 (3 pages) | Cited 22 times

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The first example of a recombination enhanced defect reaction in InP is reported. The major defect E(0.79 eV) introduced by 1‐MeV electron irradiation of p+n junctions, formed by Zn‐doped epilayers on undoped n‐type substrates, is not observed with Schottky barrier structures on similar material. The defect exhibits a reduction in activation energy of recovery from 1.3 eV under pure thermal annealing to 0.42 eV with minority‐carrier (hole) injection. The enhanced reaction rate is proportional to the square of the injected current showing that the process results from two particle capture.
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61.72.J- Point defects and defect clusters
61.80.Fe Electron and positron radiation effects
78.40.Fy Semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Failure of reciprocity in light‐induced changes in hydrogenated amorphous silicon alloys

S. Guha

Appl. Phys. Lett. 45, 569 (1984); http://dx.doi.org/10.1063/1.95283 (2 pages) | Cited 11 times

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From a study of the effect of light exposure on photoconductivity and solar cell performance of hydrogenated amorphous silicon alloys for different exposure time and intensity, we show that the light‐induced changes do not obey reciprocity. Degradation is larger at high intensity light exposure for a shorter time than at low intensity exposure for a longer time even though the product of the exposure time and light intensity is kept a constant. A model that can explain the failure of reciprocity is discussed.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
72.80.Ng Disordered solids
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Contact resistance improvements by implantation through an Al mask

T. J. Faith, J. J. O’Neill, and W. A. Hicinbothem

Appl. Phys. Lett. 45, 571 (1984); http://dx.doi.org/10.1063/1.95284 (2 pages) | Cited 1 time

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Comparisons were made between (Al‐1% Si)/n+Si contacts in which the phosphorus dopant had been implanted through native‐oxide or grown‐oxide layers, and similar contacts in which the phosphorus dopant had been implanted through a ∼300‐Å Al layer. The Al layer was flash evaporated immediately after in situ plasma cleaning to remove the native oxide from the silicon, thereby minimizing the incidence of oxygen ‘‘knock‐on’’ during implantation. Pre‐alloy and post‐alloy contact resistance measurements showed the contacts implanted through Al to be more responsive to the metal alloying process and to have significantly lower post‐alloy contact resistances than contacts implanted through either native‐oxide or grown‐oxide layers.
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73.40.Ns Metal-nonmetal contacts
73.25.+i Surface conductivity and carrier phenomena
61.72.U- Doping and impurity implantation
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Density of two‐dimensional electron gas in modulation‐doped structure with graded interface

A. A. Grinberg and M. S. Shur

Appl. Phys. Lett. 45, 573 (1984); http://dx.doi.org/10.1063/1.95285 (2 pages) | Cited 3 times

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We have calculated the concentration nso of the two‐dimensional gas in the AlGaAs/GaAs modulation‐doped structures with graded heterointerfaces. Our calculation shows that nso increases with the increase in the grading length WGR at small values of WGR. Depending on composition and doping of the AlGaAs layer the maximum value of nso is achieved for WGR between 20 and 70 Å. An increase in the concentration of the 2‐d gas leads to a larger device transconductance and to a large current swing. Hence, the device performance may be improved by grading the heterointerface.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling
71.20.-b Electron density of states and band structure of crystalline solids

Surface photovoltage in hydrogenated amorphous silicon

Shailendra Kumar and S. C. Agarwal

Appl. Phys. Lett. 45, 575 (1984); http://dx.doi.org/10.1063/1.95286 (3 pages) | Cited 8 times

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By solving Poisson’s equation in dark and light, it is concluded that the observed surface photovoltage in hydrogenated amorphous silicon necessarily involves a transfer of charge between the surface states and the space‐charge region, and does not directly give the band bending. Experimental evidence which supports this conclusion is presented.
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73.25.+i Surface conductivity and carrier phenomena
73.20.Hb Impurity and defect levels; energy states of adsorbed species
72.40.+w Photoconduction and photovoltaic effects

SF6 enhanced nitridation of silicon in active nitrogen

R. V. Giridhar and K. Rose

Appl. Phys. Lett. 45, 578 (1984); http://dx.doi.org/10.1063/1.95287 (3 pages) | Cited 6 times

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A new procedure for thermal nitridation of silicon is reported. Active nitrogen generated using a microwave discharge is passed over silicon wafers in an externally heated quartz tube at low pressure (0.3 Torr). Nitridation is shown to be significantly enhanced by the addition of small amounts (20–200 ppm) of SF6 to the nitrogen before it enters the discharge. In this way films about 100 Å thick with a refractive index of 2.0±0.06 can be grown at 1050 °C in 4 h. The films have etch rates of 10–15 Å/min in buffered HF (NH4F:HF=7:1). Auger analysis shows [N]/[O] atomic ratios of about 2. A 60‐Å film grown at 1000 °C inhibited substrate oxidation for over 16 h in dry oxygen at 1000 °C.
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81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.30.Nr Association, addition, insertion, cluster formation

Phonon‐limited mobility in GaAlAs/GaAs heterostructures

B. Vinter

Appl. Phys. Lett. 45, 581 (1984); http://dx.doi.org/10.1063/1.95288 (2 pages) | Cited 25 times

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A calculation of the phonon‐limited mobility of electrons confined to the channel of a GaAlAs/GaAs heterostructure has been performed with full account of the quasi‐two‐dimensionality of the channel. At 77 K the results show a reduction of mobility of about 25% as electron density increases from threshold to 7×1011cm−2; at room temperature the mobility of pure bulk GaAs is found almost independent of confinement.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Niobium films for superconducting accelerating cavities

C. Benvenuti, N. Circelli, and M. Hauer

Appl. Phys. Lett. 45, 583 (1984); http://dx.doi.org/10.1063/1.95289 (2 pages) | Cited 18 times

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Superconducting accelerating cavities made of Nb‐coated copper were produced. Niobium films of a thickness ranging from 1.4 to 4 μm were deposited onto the inside of 3‐GHz cavities and 500‐MHz frequency by bias diode sputtering. A maximum accelerating field of 8.6 MV m−1 was reached without quench which is attributed to the large thermal conductivity of copper at liquid helium temperatures.
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29.20.db Storage rings and colliders
29.27.Eg Beam handling; beam transport
85.25.-j Superconducting devices

Observation of magnetic domains with spin‐polarized secondary electrons

K. Koike and K. Hayakawa

Appl. Phys. Lett. 45, 585 (1984); http://dx.doi.org/10.1063/1.95290 (2 pages) | Cited 21 times

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Magnetic domain structure on a silicon iron (001) surface has been observed using a new scanning electron microscope (SEM), in which image contrast was obtained by using spin polarization of secondary electrons. From this image and an absorption current image of the same area, it has been confirmed that the domain structure image is not influenced by surface morphology. This represents an improvement over conventional domain structure observation methods. This new SEM will be greatly improved also as for the resolving power compared to conventional reflection methods, when used in conjunction with a proper field emission gun.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.50.Bb Fe and its alloys

Origin of nonsymmetric dielectric relaxation in dipolar materials

Koichi Shimakawa

Appl. Phys. Lett. 45, 587 (1984); http://dx.doi.org/10.1063/1.95291 (2 pages) | Cited 1 time

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A model for the origin of asymmetric dielectric relaxation in dipolar materials is proposed through a Monte Carlo study. The principal shortcomings of the Debye approach with a distribution of relaxation times can be overcome.
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77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization

AlF3—A new very high resolution electron beam resist

A. Muray, M. Isaacson, and I. Adesida

Appl. Phys. Lett. 45, 589 (1984); http://dx.doi.org/10.1063/1.95292 (3 pages) | Cited 35 times

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Using dose resolved energy loss and energy filtered imaging, the mechanism of a new high resolution resist, AlF3, is examined. It is found that exposure induces mass loss including the displacement of Al ions. From the energy filtered images, it is observed that the Al coats the walls of the exposed area. Further, it is demonstrated that high resolution patterns exposed in AlF3 can be replicated into Si3N4 substrates.
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61.80.Fe Electron and positron radiation effects
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
79.20.Kz Other electron-impact emission phenomena
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
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