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15 Sep 1984

Volume 45, Issue 6, pp. 597-702

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Effect of fiber‐far‐end reflections on intensity and phase noise in InGaAsP semiconductor lasers

G. P. Agrawal, N. A. Olsson, and N. K. Dutta

Appl. Phys. Lett. 45, 597 (1984); http://dx.doi.org/10.1063/1.95322 (3 pages) | Cited 2 times

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The effect of optical feedback on the intensity‐noise spectrum and the longitudinal‐mode line shape of a 1.55‐μm InGaAsP laser is investigated for reflections arising from the far end of a 7.5‐km‐long fiber. The intensity noise near the relaxation‐oscillation frequency is significantly enhanced by the reflection feedback. Owing to the intercavity coupling, the enhancement is, however, frequency dependent and the noise spectrum exhibits high‐contrast modulations with a period corresponding to the fiber‐cavity longitudinal‐mode separation. A simple rate equation model is used to explain the observed behavior.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Controlled fundamental supermode operation of phase‐locked arrays of gain‐guided diode lasers

E. Kapon, J. Katz, S. Margalit, and A. Yariv

Appl. Phys. Lett. 45, 600 (1984); http://dx.doi.org/10.1063/1.95323 (3 pages) | Cited 8 times

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Uniform semiconductor laser arrays tend to oscillate in a superposition of their supermodes, thus leading to large beam divergence and spectral spread. Discrimination among the supermodes in phase‐locked arrays is discussed theoretically. It is shown that supermode discrimination in gain‐guided arrays, in favor of the fundamental supermode, is made possible by the near‐field interference patterns which result from the complex optical fields of the gain‐guided lasers. A fundamental supermode operation is demonstrated, for the first time, in GaAlAs/GaAs gain‐guided laser arrays. This is achieved by control of the current (gain) profile across the array by means of individual laser contacts.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

Electro‐optic hysteresis in polyvinylidene fluoride

D. Gookin and R. Morris

Appl. Phys. Lett. 45, 603 (1984); http://dx.doi.org/10.1063/1.95324 (2 pages) | Cited 6 times

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Electro‐optic data for uniaxially drawn polyvinylidene fluoride are presented. Measurements at successively increasing fields show a hysteresis effect. The observed electro‐optic hysteresis is compared with theoretical predictions of hysteresis in ferroelectric ceramics.
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78.20.Jq Electro-optical effects
78.20.Fm Birefringence
77.80.Dj Domain structure; hysteresis

Direct polarization switching in semiconductor lasers

Y. C. Chen and J. M. Liu

Appl. Phys. Lett. 45, 604 (1984); http://dx.doi.org/10.1063/1.95325 (3 pages) | Cited 13 times

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Direct polarization switching controlled by the level of the injection current is achieved in InGaAsP lasers operating near the polarization transition temperature. The laser output can be switched from a pure TM00 mode at low injection currents to a TE00 mode at high currents with high extinction ratios and nanosecond response time. Conditions for polarization switching in InGaAsP and AlGaAs lasers at room temperature are also discussed.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Fc Modulation, tuning, and mode locking

Channeled‐substrate GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy

Yao‐Hwa Wu, Michael Werner, and Shyh Wang

Appl. Phys. Lett. 45, 606 (1984); http://dx.doi.org/10.1063/1.95326 (3 pages) | Cited 6 times

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(GaAl)As/GaAs multiple quantum well channeled‐substrate lasers with lateral index guiding have been made by molecular beam epitaxy. They operate stably in a single longitudinal mode.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.By Design of specific laser systems
68.55.-a Thin film structure and morphology

Mutual phase locking of a coupled laser diode‐Gunn diode pair

S. H. Izadpanah, Z. Rav‐Noy, S. Mukai, S. Margalit, and Amnon Yariv

Appl. Phys. Lett. 45, 609 (1984); http://dx.doi.org/10.1063/1.95327 (2 pages) | Cited 2 times

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Mutual phase locking has been achieved through series connection of a semiconductor laser and a Gunn diode oscillator. Experimental results obtained demonstrate a mutual interaction between the two oscillators which results in a short term Gunn diode oscillator stability and improved spectral purity of its output. We also observe a narrowing of laser pulses and an improvement in regularity.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Spatially resolved electric field measurements in the cathode fall using optogalvanic detection of Rydberg atoms

D. K. Doughty and J. E. Lawler

Appl. Phys. Lett. 45, 611 (1984); http://dx.doi.org/10.1063/1.95328 (3 pages) | Cited 72 times

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Spatially resolved electric field measurements in the cathode fall region of a glow discharge are performed using optogalvanic detection of He Rydberg atoms. The large linear Stark effect of Rydberg levels provides an accurate, sensitive measure of discharge electric fields.
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52.80.Hc Glow; corona
32.60.+i Zeeman and Stark effects

Drawing‐induced hydrogen‐associated defect centers at the silica optical fiber surface

Yoshinori Hibino and Hiroaki Hanafusa

Appl. Phys. Lett. 45, 614 (1984); http://dx.doi.org/10.1063/1.95329 (2 pages) | Cited 3 times

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Defect centers in optical fibers induced by drawing were investigated using the electron spin resonance technique. The hydrogen hyperfine (hf) doublet with splitting of 119 G was observed for both GeO2‐doped and pure silica optical fibers, which contain few hydroxyl ions. The hf peak intensity was directly proportional to specific surface area of optical fibers. These results indicate that the hf doublet arises from the hydrogen interaction with a drawing‐induced germanium defect center at or near the optical fiber surface.
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76.30.Mi Color centers and other defects
42.81.-i Fiber optics
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Formation of bulk metallic glass by fluxing

H. W. Kui, A. L. Greer, and D. Turnbull

Appl. Phys. Lett. 45, 615 (1984); http://dx.doi.org/10.1063/1.95330 (2 pages) | Cited 242 times

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Bulk specimens (0.4–4 g mass) of the alloy Pd40Ni40P20 have been undercooled consistently to the glass state, with no detectable superficial crystallinity, in a molten flux of dehydrated boron oxide. The minimum dimension of the most massive glass specimen, so formed, was 1.0 cm. The absence of crystallinity in the specimens was confirmed by x‐ray diffraction, scanning electron microscopy, and calorimetry.
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81.05.Kf Glasses (including metallic glasses)
81.05.Bx Metals, semimetals, and alloys
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Patterned photonucleation of chemical vapor deposition of Al by UV‐laser photodeposition

J. Y. Tsao and D. J. Ehrlich

Appl. Phys. Lett. 45, 617 (1984); http://dx.doi.org/10.1063/1.95331 (3 pages) | Cited 38 times

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UV‐laser photodeposition has been used to predispose surfaces to pyrolytic chemical vapor deposition (CVD) of Al from triisobutylaluminum. Two laser beam (UV and IR) experiments indicate that the predisposition is due to the formation of a catalytic surface for heterogeneous chemistry. Time‐resolved transmission measurements indicate that a few photodeposited monolayers are sufficient to nucleate CVD growth. The technique may be generally useful for maskless patterned growth by CVD processes with large nucleation barriers.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
79.20.Ds Laser-beam impact phenomena
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy

P. M. Petroff, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 45, 620 (1984); http://dx.doi.org/10.1063/1.95332 (3 pages) | Cited 219 times

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Hyperfine control of the interface structure and composition between GaAs and AlAs films grown by molecular beam epitaxy has been achieved by deposition on vicinal (100) GaAs substrates. This control is demonstrated by producing (GaAs)m‐(AlAs)n submonolayer (m and/or n<1) superlattices over a wide temperature range. Analysis of these submonolayer superlattices by transmission electron microscopy shows that the layer growth regime is dominant and that layer nucleation is initiated preferentially at the step edges on the (100) vicinal surface. Potential applications of submonolayer superlattices including the growth of superlattice layers perpendicular to the substrate surface are described.
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68.55.-a Thin film structure and morphology

Comparison of laser‐initiated and thermal chemical vapor deposition of tungsten films

T. F. Deutsch and D. D. Rathman

Appl. Phys. Lett. 45, 623 (1984); http://dx.doi.org/10.1063/1.95333 (3 pages) | Cited 30 times

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ArF excimer laser radiation has been used to deposit W films on silicon and on SiO2 by initiating the gas phase reaction of WF6 with H2. Deposition rates >100 nm/min and film resistivities as low as two times the bulk value have been obtained at deposition temperatures of 440 °C. The properties of the laser‐deposited films are compared with those of fims obtained using conventional thermal deposition techniques. Film resistivity correlates with the microstructure which in turn depends on the deposition temperature; above 350 °C the low‐resistivity α‐W phase dominates.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.At Metal and metallic alloys
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Silica at ultrahigh temperature and expanded volume

N. C. Holmes, H. B. Radousky, M. J. Moss, W. J. Nellis, and S. Henning

Appl. Phys. Lett. 45, 626 (1984); http://dx.doi.org/10.1063/1.95334 (3 pages) | Cited 12 times

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Shock compression experiments were performed on samples of 0.13 g/cm3 density silica aerogel. The aerogel is a transparent, homogeneous, open cell, SiO2, glass structure with a pore size of 10 nm. A shock velocity of 11.4 km/s was measured at 14.6 GPa (146 kbar) and over sevenfold compression of the specimen, which is threefold expanded relative to the density of crystalline α‐quartz. A shock temperature of nearly 1 eV was measured at 6.7 GPa. These experiments access a new regime for accurate laboratory measurements on high‐temperature, expanded‐volume states of glass.
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62.50.-p High-pressure effects in solids and liquids
64.30.-t Equations of state of specific substances

Hydrogenated amorphous silicon for archival storage

R. D. McLeod, W. Pries, H. C. Card, and K. C. Kao

Appl. Phys. Lett. 45, 628 (1984); http://dx.doi.org/10.1063/1.95335 (3 pages) | Cited 4 times

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Changes in optical reflectivity of hydrogenated amorphous silicon films of up to 90% have been induced by Ar laser processing, and are correlated with hydrogen evolution from the material. Accompanying changes greater than three orders of magnitude in resistivity also provide a mechanism for interrogation of the stored data by an electron beam. Storage densities as high as 109 bits/in2 for optical recording and 1011 bits/in2 for recording with electron beams are predicted on the basis of these results.
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81.40.Tv Optical and dielectric properties related to treatment conditions
75.20.Ck Nonmetals
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Graphoepitaxy of Ge on SiO2 by solid‐state surface‐energy‐driven grain growth

T. Yonehara, Henry I. Smith, C. V. Thompson, and J. E. Palmer

Appl. Phys. Lett. 45, 631 (1984); http://dx.doi.org/10.1063/1.95336 (3 pages) | Cited 23 times

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Solid‐state surface‐energy‐driven grain growth in 30‐nm‐thick Ge films on SiO2, encapsulated with SiO2, produces a predominance of (110) crystallographic texture in secondary grains several micrometers in diameter. If the SiO2 substrate is patterned with a 0.2‐μm period relief grating, ∼10 nm deep, with approximately square‐wave profile, many of the secondary grains that form have (100) texture. These grains show a graphoepitaxial orientation with 〈100〉 directions preferentially parallel to the grating axis.
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68.55.-a Thin film structure and morphology
68.35.Md Surface thermodynamics, surface energies
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Plasma‐enhanced chemical vapor deposition of β‐tungsten, a metastable phase

C. C. Tang and D. W. Hess

Appl. Phys. Lett. 45, 633 (1984); http://dx.doi.org/10.1063/1.95337 (3 pages) | Cited 26 times

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Plasma‐enhanced chemical vapor deposition of a metastable phase of tungsten ( β‐W) is performed using tungsten hexafluoride and hydrogen as source gases. At 350 °C, the as‐deposited resistivity of these films is ∼50 μΩ cm. After heat treatments between 650 and 750 °C in forming gas, the resistivity drops below 11 μΩ cm. Concomitant with this resistivity change is a phase change to α‐W, the equilibrium, body‐centered‐cubic form.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.At Metal and metallic alloys
81.40.Gh Other heat and thermomechanical treatments
64.60.My Metastable phases

Suppression of lateral diffusion in the Cr‐Si system by ion irradiation

L. R. Zheng and J. W. Mayer

Appl. Phys. Lett. 45, 636 (1984); http://dx.doi.org/10.1063/1.95338 (3 pages) | Cited 5 times

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Effects of ion irradiation on lateral diffusion have been studied in device geometry structures prepared by deposition of Cr films on patterned Si substrates with scanning electron microscopy and transmission electron microscopy. Lateral diffusion can be greatly reduced, and even completely suppressed by using arsenic ion implantation, but not by using silicon irradiation. In Cr/Si planar structures the dopant atoms accumulate near the Si‐CrSi2 interface or redistribute into the unreacted Cr films. The presence of 1–2 at. % arsenic substantially slows down the CrSi2 formation. We attribute the suppression of lateral diffusion in device geometry structures to interactions of impurities with the matrix atoms.
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61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities
64.75.-g Phase equilibria
61.72.U- Doping and impurity implantation

High mobility hole gas and valence‐band offset in modulation‐doped p‐AlGaAs/GaAs heterojunctions

W. I. Wang, E. E. Mendez, and Frank Stern

Appl. Phys. Lett. 45, 639 (1984); http://dx.doi.org/10.1063/1.95339 (3 pages) | Cited 101 times

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Modulation‐doped p‐AlGaAs/GaAs heterojunctions have been grown by molecular beam epitaxy. The effects of undoped AlGaAs spacer thickness on sheet carrier density and on Hall mobility have been investigated. A mobility of 97 000 cm2 V−1 s−1 has been obtained at 4.2 K for a sheet density of 1.7×1011 cm−2. This is the highest mobility reported for holes in III‐V compound semiconductors. A valence‐band offset of 210±30 meV was deduced for Al0.5Ga0.5As /GaAs heterojunctions.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Nonelastic acoustic‐phonon‐electron interactions in Monte‐Carlo simulations at low fields

F. Hesto, J‐L. Pelouard, R. Castagné, and J‐F. Pône

Appl. Phys. Lett. 45, 641 (1984); http://dx.doi.org/10.1063/1.95340 (3 pages) | Cited 1 time

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Monte‐Carlo simulation is an efficient means of investigating electron transport in semiconductors. Nevertheless, the prevailing physical phenomena at low electric fields are usually neglected because a Monte‐Carlo algorithm is needed only at rather high fields. It is shown that reaching thermodynamic equilibrium between electrons and crystal lattice in a Monte‐Carlo simulation requires only including inelastic interactions with acoustic phonons at the center of the Brillouin zone. Electron energy and velocity distributions at equilibrium resulting from this umproved model are compared with the theoretical Fermi–Dirac distribution.
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71.38.-k Polarons and electron-phonon interactions
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Dp General theory, scattering mechanisms
63.20.K- Phonon interactions

Spatially resolved electrical and spectroscopic studies around dislocations in GaAs single crystals

K. Watanabe, H. Nakanishi, K. Yamada, and K. Hoshikawa

Appl. Phys. Lett. 45, 643 (1984); http://dx.doi.org/10.1063/1.95341 (3 pages) | Cited 19 times

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Spatially resolved electrical and spectroscopic behavior around isolated grown‐in dislocation in p‐type undoped GaAs crystals grown by liquid‐encapsulated Czochralski technique is investigated. Surface spreading resistance is found to remarkably increase at about 100 μm in diameter around dislocations. In a corresponding area, photoluminescence intensity of the 1.49‐eV and 1.44‐eV acceptor level peaks decreases. However, that of 0.8‐eV deep level peak does not vary. These results demonstrate that dislocations should give rise to carrier density variation due to the relative concentration change of levels around them.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
78.40.Fy Semiconductors
72.80.Ey III-V and II-VI semiconductors

Growth of Cd1−xMnxTe films with 0<x<0.9 by atomic layer epitaxy

M. Pessa and O. Jylhä

Appl. Phys. Lett. 45, 646 (1984); http://dx.doi.org/10.1063/1.95342 (3 pages) | Cited 33 times

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Thin Cd1−xMnxTe semiconductor films with x ranging from 0 to 0.9 have been grown on CdTe (111) substrates using the atomic layer epitaxy method. The films grow epitaxially at all concentrations and show no manganese interdiffusion. The films are characterized by low‐energy electron diffraction, Auger electron spectroscopy and angle‐resolved UV photoemission.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.60.-p Physical properties of thin films, nonelectronic

New mode of IR detection using quantum wells

D. D. Coon and R. P. G. Karunasiri

Appl. Phys. Lett. 45, 649 (1984); http://dx.doi.org/10.1063/1.95343 (3 pages) | Cited 122 times

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A new mode of IR detection using photoemission from a single quantum well is proposed and optimization of the device performance by the proper choice of parameters is discussed. Despite the very thin device structures, theoretical calculations show large absorption at wavelengths near cutoff. The largest photoemissive response is found by adjusting the well parameters so that an excited virtual state lies just above threshold.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
81.65.-b Surface treatments
79.70.+q Field emission, ionization, evaporation, and desorption
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Picosecond measurement of Auger recombination rates in InGaAs

M. E. Prise, M. R. Taghizadeh, S. D. Smith, and B. S. Wherrett

Appl. Phys. Lett. 45, 652 (1984); http://dx.doi.org/10.1063/1.95344 (3 pages) | Cited 18 times

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The picosecond decay of carriers in InGaAs, following photo excitation at photon energies just above the band edge, has been measured. A mode‐locked neodymium:yttrium aluminum garnet pumped optical parametric amplifier provided the tunable, 35‐ps pulses for excite‐probe measurements. At carrier densities in excess of 1018 cm−3 Auger processes are found to dominate the carrier recombination. We determine an Auger rate of 2.5±0.5×10−28 cm6 s−1.
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79.20.Fv Electron impact: Auger emission
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Electron and hole ionization coefficients in (100) oriented Ga0.18In0.82As0.39P0.61

Fukunobu Osaka, Takashi Mikawa, and Takao Kaneda

Appl. Phys. Lett. 45, 654 (1984); http://dx.doi.org/10.1063/1.95345 (3 pages) | Cited 2 times

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The impact ionization coefficients for electrons and holes in (100) oriented Ga0.18In0.82As0.39P0.61 whose band gap is 1.11 eV have been obtained from photomultiplication measurements on a Cd diffused p+n abrupt junction having a donor concentration of 2.5×1016 cm−3. The electron‐to‐hole ionization coefficient ratio has been found to be about 1.1 in the electric field range 4.0×105–5.0×105 V/cm.
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72.80.Ey III-V and II-VI semiconductors
85.60.Dw Photodiodes; phototransistors; photoresistors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.30.De Semiconductor-device characterization, design, and modeling

Is the intrinsic conductivity of AlGaSb grown at low temperatures n or p type?

Y. Takeda, S. Noda, and A. Sasaki

Appl. Phys. Lett. 45, 656 (1984); http://dx.doi.org/10.1063/1.95346 (3 pages) | Cited 15 times

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In liquid phase epitaxial GaSb and AlGaSb grown at low temperatures some papers reported p‐type conductivity and others observed the conversion to n‐type conductivity. In this paper, it is shown that p‐type conductivity is intrinsic at growth temperatures down to 350 °C and that the extrinsic impurities influence the concentration at lower growth temperatures than 350 °C.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.10.Dn Growth from solutions
68.55.-a Thin film structure and morphology
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
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