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Appl. Phys. Lett. 45, 617 (1984); http://dx.doi.org/10.1063/1.95331 (3 pages)

Patterned photonucleation of chemical vapor deposition of Al by UV‐laser photodeposition

J. Y. Tsao and D. J. Ehrlich

Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173‐0073

(Received 13 April 1984; accepted 29 June 1984)

UV‐laser photodeposition has been used to predispose surfaces to pyrolytic chemical vapor deposition (CVD) of Al from triisobutylaluminum. Two laser beam (UV and IR) experiments indicate that the predisposition is due to the formation of a catalytic surface for heterogeneous chemistry. Time‐resolved transmission measurements indicate that a few photodeposited monolayers are sufficient to nucleate CVD growth. The technique may be generally useful for maskless patterned growth by CVD processes with large nucleation barriers.

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KEYWORDS and PACS

PACS

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 82.65.+r

    Surface and interface chemistry; heterogeneous catalysis at surfaces

  • 79.20.Ds

    Laser-beam impact phenomena

  • 82.30.Lp

    Decomposition reactions (pyrolysis, dissociation, and fragmentation)

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    P. N. Favennec, M. Salvi, M. A. DiForte Poisson, and J. P. Duchemin, Appl. Phys. Lett. 43, 771 (1983APPLAB000043000008000771000001).

    R. W. McClelland, C. O. Bozler, and J. C. C. Fan, Appl. Phys. Lett. 37, 560 (1980APPLAB000037000006000560000001).

    D. J. Ehrlich, R. M. Osgood, Jr., and T. F. Deutsch, Appl. Phys. Lett. 38, 946 (1981APPLAB000038000011000946000001).


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