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1 Oct 1984

Volume 45, Issue 7, pp. 707-808

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Optimization of excitation channels in the discharge‐excited Sr+ recombination laser

M. S. Butler and J. A. Piper

Appl. Phys. Lett. 45, 707 (1984); http://dx.doi.org/10.1063/1.95388 (3 pages) | Cited 6 times

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We report efficient operation of a longitudinal discharge‐excited Sr+ recombination laser operating at λ=430.5 nm in a ‘‘long pulse’’ (∼1 μs full width at half‐maximum) mode which utilizes Sr++ ions produced in the afterglow by heavy body processes. Optimum operating conditions have been established and compared with those for the ‘‘short pulse’’ (∼200 ns full width at half‐maximum) mode of operation observed previously. Single pulse energies at 180 and 250 μJ have been obtained in the short and long pulse modes respectively corresponding to extraction energy densities of 6 and 8 μJ/cm3.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)
52.80.Sm Magnetoactive discharges (e.g., Penning discharges)

High power coupled ridge waveguide semiconductor laser arrays

Yihjye Twu, A. Dienes, Shyh Wang, and J. R. Whinnery

Appl. Phys. Lett. 45, 709 (1984); http://dx.doi.org/10.1063/1.95389 (3 pages) | Cited 13 times

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Using index‐guided ridge waveguide structures, we have obtained single‐lobe far‐field pattern from coupled multiple‐stripe semiconductor laser arrays. A stable far‐field pattern has been observed up to 250‐mW peak pulsed power. This desired performance of a semiconductor laser array is achieved by intentional pumping of a laser array at coupling regions, which is possible in ridge waveguide structures.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.60.By Design of specific laser systems

High‐speed photoconductivity and infrared to visible up‐conversion in GaP light‐emitting diodes

K. Moser, W. Eisfeld, U. Werling, S. Wahl, and W. Prettl

Appl. Phys. Lett. 45, 711 (1984); http://dx.doi.org/10.1063/1.95390 (3 pages) | Cited 7 times

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In GaP:N (Zn,Te) light‐emitting diodes extrinsic photoconductivity and infrared to visible up‐conversion have been investigated by short laser pulses at 10‐μm wavelength. A time constant of the order of 1 ns was observed indicating that free infrared excited hole to bound donor recombination yields the fast response.
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72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence

Real‐time optical waveform convolver/cross correlator

Y. S. Bai, W. R. Babbitt, N. W. Carlson, and T. W. Mossberg

Appl. Phys. Lett. 45, 714 (1984); http://dx.doi.org/10.1063/1.95391 (3 pages) | Cited 34 times

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We show that an inhomogeneously broadened sample, excited by a series of three resonant optical pulses, emits an optical signal whose electric field envelope closely approximates the convolution or cross correlation of the field envelopes belonging to two of the three excitation pulses. The convolution (cross correlation) function is obtained when the first (second) pulse in the excitation sequence is short compared to the temporal structure of the other two excitation pulses.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.79.-e Optical elements, devices, and systems
42.30.-d Imaging and optical processing
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Single mode, high power GaAlAs/GaAs lasers

R. J. Fu, C. J. Hwang, C. S. Wang, and B. LaLevic

Appl. Phys. Lett. 45, 716 (1984); http://dx.doi.org/10.1063/1.95392 (3 pages) | Cited 5 times

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A new channeled‐substrate narrow stripe laser with double current confinement and large optical cavity has been developed. This laser incorporates symmetrical waveguiding layers to form the large cavity and additional reverse biased p‐n junction to confine the current. Light output up to 60 mW with stable single longitudinal and spatial modes is obtained in cw operation at room temperature. Threshold current as low as 15 mA and differential quantum efficiency as high as 70% are achieved. Furthermore, high quality beam with far‐field angle of 32°×10° (full width at half‐maximum) is maintained throughout the whole power range.
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42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Bistable optical electrical/microwave switching using optically coupled monolithically integrated GaAlAs translasers

K. Y. Lau and A. Yariv

Appl. Phys. Lett. 45, 719 (1984); http://dx.doi.org/10.1063/1.95393 (3 pages) | Cited 3 times

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A novel switching device consisting of optically coupled laser and field‐effect transistor monolithically integrated on a semi‐insulating substrate is demonstrated. The physical origin of the bistable behavior is illustrated. The input and output to this device can take the form of optical and/or electrical signals. Applications of this device in optical, electrical, microwave switching, and pulse‐position/pulse frequency demodulation are illustrated.
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85.60.-q Optoelectronic devices
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics

Single contact tailored gain phased array of semiconductor lasers

C. P. Lindsey, E. Kapon, J. Katz, S. Margalit, and A. Yariv

Appl. Phys. Lett. 45, 722 (1984); http://dx.doi.org/10.1063/1.95374 (3 pages) | Cited 18 times

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We demonstrate a single contact tailored gain‐guided array in which the gain profile across the array is made strongly asymmetric by varying the width of the contact stripes. A proton isolated array of six (GaAl)As lasers with 5‐μm separations and widths varying linearly between 3 and 8 μm had a single lobed far field 2° wide, close to the diffraction limit for a single supermode. Fabrication of this device is simple, and suited to large‐scale processing techniques. We also show that in such an asymmetric gain‐guided array the fundamental mode is favored over higher order modes, and that higher order modes can have single lobed far‐field patterns differing only slightly from that of the fundamental.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

Vacuum ultraviolet light transmission through hollow‐core quartz‐glass cladding optical fibers

M. Watanabe, T. Hidaka, H. Tanino, K. Hoh, and Y. Mitsuhashi

Appl. Phys. Lett. 45, 725 (1984); http://dx.doi.org/10.1063/1.95375 (3 pages) | Cited 7 times

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This letter presents the first demonstration of vacuum ultraviolet light transmission using a flexible fiber. Synchrotron radiation having a peak wavelength of about 30 Å successfully traversed the fiber and exposed electron beam resist films of polytrifluoroethyl α‐chloroacrylate and polymethyl methacrylate.
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42.81.-i Fiber optics
07.85.-m X- and γ-ray instruments
42.70.Ce Glasses, quartz

Stimulated emission on copper I and gold I at room temperature

N. D. Perry and R. C. Tobin

Appl. Phys. Lett. 45, 727 (1984); http://dx.doi.org/10.1063/1.95376 (2 pages) | Cited 4 times

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Stimulated emission has been observed on the copper 510.6‐, 570.0‐, and 578.2‐nm, and the gold 627.8‐nm transitions at room temperature. Separate discharges are used to produce the metal vapor by sputtering in the presence of a supersonic gas flow, and to excite the metal atoms.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
51.70.+f Optical and dielectric properties
52.80.-s Electric discharges
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)

Single‐longitudinal‐mode stabilized graded‐index‐rod external coupled‐cavity laser

K‐Y. Liou, C. A. Burrus, R. A. Linke, I. P. Kaminow, S. W. Granlund, C. B. Swan, and P. Besomi

Appl. Phys. Lett. 45, 729 (1984); http://dx.doi.org/10.1063/1.95377 (3 pages) | Cited 5 times

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An active‐passive coupled‐cavity semiconductor laser using a slightly shorter than 1/4 pitch graded‐index‐rod lens reflector as the external cavity has been demonstrated. The graded‐index lens is prepared from an optical fiber waveguide. We report (1) stable single‐longitudinal‐mode operation of the graded‐index‐rod external coupled‐cavity (GRECC) lasers with 2‐Gbits/s modulation and (2) digital transmission at 1 Gbits/s over 99 km of fiber using a 1.55‐μm GRECC laser.
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42.55.Px Semiconductor lasers; laser diodes
42.81.-i Fiber optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Temperature‐dependent polarization behavior of semiconductor lasers

Y. C. Chen and J. M. Liu

Appl. Phys. Lett. 45, 731 (1984); http://dx.doi.org/10.1063/1.95378 (3 pages) | Cited 19 times

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InGaAsP lasers are found to operate in a pure TM mode or in a mixture of TE and TM modes at low temperatures. The polarization change at low temperatures is attributed to a thermal‐stress effect in the InGaAsP active layer. However, none of the AlGaAs/GaAs lasers tested exhibits such behavior because the thermal stress in the active layer is significantly offset by the GaAs substrate.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

A mechanism for in situ monitoring of hydrogen incorporation into amorphous silicon

W. Pries, R. D. McLeod, H. C. Card, and K. C. Kao

Appl. Phys. Lett. 45, 734 (1984); http://dx.doi.org/10.1063/1.95379 (3 pages) | Cited 5 times

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An optical mechanism based on temporal changes in reflectivity during the growth of hydrogenated amorphous silicon films is shown to provide for an accurate determination of the degree of hydrogen incorporation, as well as the growth rate of the growing film. This mechanism is described experimentally and modeled phenomenologically, and is expected to provide a basis for in situ correlation of hydrogen incorporation with process parameters.
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68.55.-a Thin film structure and morphology
68.60.-p Physical properties of thin films, nonelectronic
75.20.Ck Nonmetals

Residence time before sodium migration in proton irradiated glasses

G. Battaglin, G. Della Mea, G. De Marchi, and P. Mazzoldi

Appl. Phys. Lett. 45, 736 (1984); http://dx.doi.org/10.1063/1.95380 (3 pages) | Cited 1 time

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Measurements of residence time prior to Na migration resulting from 600‐keV proton irradiation of glasses are reported. The residence time was a function of the beam current (rather than current density), sample temperature, and glass composition. The residence time decreased exponentially with increasing current and increasing temperature.
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61.80.Jh Ion radiation effects
66.30.-h Diffusion in solids
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Effects of carrier confinement in graded AlGaAs/GaAs heterojunctions

Y. R. Yuan, K. Mohammed, M. A. A. Pudensi, and James L. Merz

Appl. Phys. Lett. 45, 739 (1984); http://dx.doi.org/10.1063/1.95381 (3 pages) | Cited 51 times

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An unusual new line has been observed in the 1.4‐K photoluminescence spectrum of GaAs/AlGaAs epilayers grown by liquid phase epitaxy. A very strong, broad, and asymmetric line is seen, with peak energy ranging from the bound exciton to the shallowest acceptor, increasing roughly linearly with the logarithm of the excitation power. By employing a novel step‐etching technique, this transition is shown to originate from the GaAs/AlGaAs heterojunction. A qualitative model is proposed to explain the observed data.
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78.40.Fy Semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.23.An Theories and models; localized states
72.80.Ey III-V and II-VI semiconductors

Preheated cw laser annealed transistors in silicon on sapphire

G. Holmén, S. Peterström, and G. Alestig

Appl. Phys. Lett. 45, 741 (1984); http://dx.doi.org/10.1063/1.95382 (3 pages) | Cited 2 times

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p‐channel metal‐oxide‐semiconductor transistors have been fabricated in silicon on sapphire. The electrical properties of cw laser annealed transistors which had been subjected to a low‐temperature annealing before the laser annealing treatment, were found to be superior to laser annealed transistors and to furnace annealed transistors. The new annealing processes prevent the formation of the defect centers which normally after laser annealing have a degrading influence on the carrier mobility of the material. The defect concentration was measured by deep level transient spectroscopy.
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85.30.Tv Field effect devices
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Rs Electrical and magnetic properties related to treatment conditions
79.20.Ds Laser-beam impact phenomena

n‐ZrS3/p‐WSe2 heterojunctions

R. Späh, M. Lux‐Steiner, E. Bucher, and S. Wagner

Appl. Phys. Lett. 45, 744 (1984); http://dx.doi.org/10.1063/1.95383 (2 pages) | Cited 5 times

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We report the first heterojunction with WSe2 (Eg=1.16 eV) which also introduces the semiconductor ZrS3 (Eg=2.05 eV) to device use. The junctions were prepared in sealed ampoules by iodine vapor transport of presynthesized zirconium trisulfide onto substrates of tungsten diselenide. Diodes exhibited a rectification ratio of up to 20 at 1 V. The photocurrent saturated at 0.5–4 V of reverse bias. The highest quantum efficiency for HeNe laser light (λ=632.8 nm) was 0.5 at 4‐V reverse bias.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
72.80.Ga Transition-metal compounds

n‐CuInSe2 based photoelectrochemical cells: Improved, stable performance in aqueous polyiodide through rational surface and solution modifications

David Cahen and Yih‐Wen Chen

Appl. Phys. Lett. 45, 746 (1984); http://dx.doi.org/10.1063/1.95384 (3 pages) | Cited 21 times

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Surface optimization of n‐CuInSe2 crystals by chemical etching in Br2/MeOH and subsequent thermal oxidation results in >10% efficient photanodes in neutral aqueous polyiodide. The etchant removes a near‐stoichiometric surface layer and thermal oxidation leads to In–O bond formation. We find from (photo) electrochemical studies in acetonitrile and in the iodide electrolyte that, upon semiconductor decomposition, Cu ions are released into the solution, consistent with solid state chemical studies that show the existence of the chalcopyrite phase also towards Cu‐poor compositions. Addition of Cu ions, as also reported by S. Menezes, H. J. Lewerenz, and K. J. Bachmann [Nature (London) 305, 615 (1983)] or Cu and In ions to the iodide solution drastically decreases photoanode decomposition. Covering the electrode with an extra film of oxidized indium results in true stabilization, at up to 11.7% conversion efficiency under 120‐mW/cm2 tungsten‐halogen illumination. Because, in the presence of Cu ions and under illumination, iodide solutions are not completely stable towards oxidation by O2, especially if the solution is acidic, an air‐free electrolyte needs to be used.
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82.47.-a Applied electrochemistry
73.40.Mr Semiconductor-electrolyte contacts
82.50.-m Photochemistry
82.45.-h Electrochemistry and electrophoresis

Quantum size effects in GaAs/GaAsxP1−x strained‐layer superlattices

P. L. Gourley and R. M. Biefeld

Appl. Phys. Lett. 45, 749 (1984); http://dx.doi.org/10.1063/1.95385 (3 pages) | Cited 26 times

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We report the first observations of quantum size effects in GaAs/GaAs0.5P0.5 strained‐layer superlattices (SLS’s). Using excitation and photoluminescence spectroscopies, we have observed optical transitions between excited states of the electron and hole quantum wells. These observations provide a measure of the biaxial compressive strain in the GaAs layers, interfacial roughness, and valence‐band offset for the GaAs/GaP heterojunction.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
78.40.Fy Semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Thermionic emission in silicon at temperatures below 30 K

Y. N. Yang, D. D. Coon, and P. F. Shepard

Appl. Phys. Lett. 45, 752 (1984); http://dx.doi.org/10.1063/1.95386 (3 pages) | Cited 15 times

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Experimental results on the injection of carriers into the i region of silicon p‐i‐n diodes at temperatures below 30 K are described and a simple model is presented to explain the observed I‐V characteristics. A range of temperatures is identified in which it is argued that thermionic emission into the i region can be observed unmasked by other effects. The model generalizes the Richardson–Dushman equation to include the effect of impurity bands and a finite transition region between heavily doped and lightly doped regions. As an application, a fast nondestructive means of determining the abruptness of doping profiles is suggested.
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79.40.+z Thermionic emission
85.30.Kk Junction diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.30.+h Metal-insulator transitions and other electronic transitions

Junction leakage studies in rapid thermal annealed diodes

Avid Kamgar, W. Fichtner, T. T. Sheng, and D. C. Jacobson

Appl. Phys. Lett. 45, 754 (1984); http://dx.doi.org/10.1063/1.95387 (3 pages) | Cited 19 times

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A detailed and comprehensive study of As‐implanted Si annealed using incoherent tungsten radiation has been perfomed. The study emphasized the leakage currrent results, correlating them with the junction depths obtained from Rutherford backscattering measurements, and the residual damage observed in transmission electron microscopy (TEM). Sheet resistance measurements, as well as comparisons with wafers annealed in conventional furnaces, were also made. It was found that higher temperatures and shorter times resulted in lower leakage currents for given junction depths. We also found that the absence of residual dislocations in TE studies of annealed wafers was not a sufficient indication of low junction leakage.
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85.30.Kk Junction diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Rs Electrical and magnetic properties related to treatment conditions

Thermal oxidation of 3C silicon carbide single‐crystal layers on silicon

C. D. Fung and J. J. Kopanski

Appl. Phys. Lett. 45, 757 (1984); http://dx.doi.org/10.1063/1.95394 (3 pages) | Cited 32 times

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Thermal oxidation of thick single‐crystal 3C SiC layers on silicon substrates was studied. The oxidations were conducted in a wet O2 atmosphere at temperatures from 1000 to 1250 °C for times from 0.1 to 50 h. Ellipsometry was used to determine the thickness and index of refraction of the oxide films. Auger analysis showed them to be homogeneous with near stoichiometric composition. The oxide growth followed a linear parabolic relationship with time. Activation energy of the parabolic rate constant was found to be 50 kcal/mole, while the linear rate constant was 74 kcal/mole. The latter value corresponds approximately to the energy required to break a Si–C bond. Electrical measurements show an effective density of 4–6×1011 cm−2 for fixed oxide charges at the oxide‐carbide interface, and the dielectric strength of the oxide film is approximately 6×106 V/cm.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments

Planar InP/GaInAsP/GaInAs buried‐structure avalanche photodiode

Masahiro Kobayashi, Susumu Yamazaki, and Takao Kaneda

Appl. Phys. Lett. 45, 759 (1984); http://dx.doi.org/10.1063/1.95395 (3 pages) | Cited 3 times

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A new planar InP/GaInAsP/GaInAs buried‐structure avalanche photodiode, which has a buried active region and an n−‐InP guardring region, has been developed. A useful guardring effect and a uniform multiplication are obtained in the multiplication range of up to 30. The diode shows a dark current of 10 nA at a bias of 90% of the breakdown voltage, a maximum avalanche gain of 50 under 1.3‐μm light irradiation, and a gain‐bandwidth product of about 16 GHz.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.30.De Semiconductor-device characterization, design, and modeling

Donor and acceptor behavior of gold in silicon

J. Utzig and W. Schröter

Appl. Phys. Lett. 45, 761 (1984); http://dx.doi.org/10.1063/1.95396 (3 pages) | Cited 21 times

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We have investigated by capacitance transient spectroscopy concentration profiles of gold produced by electrotransport and concentration variations by pairing of gold with iron in p‐type silicon. We have found that the line amplitude of the gold donor and that of the gold acceptor have a constant radio independent of gold concentration, diffusion temperature, and of gold‐iron‐pair concentration. From this result we conclude that the two levels are associated with one gold species in silicon.
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66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
82.45.-h Electrochemistry and electrophoresis

Backgating in GaAs/(Al,Ga)As modulation‐doped field‐effect transistors and its reduction with a superlattice

D. Arnold, J. Klem, T. Henderson, H. Morkoç, and L. P. Erickson

Appl. Phys. Lett. 45, 764 (1984); http://dx.doi.org/10.1063/1.95397 (3 pages) | Cited 4 times

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Backgating in GaAs/(Al, Ga)As modulation‐doped field‐effect transistors was investigated experimentally and theoretically. The backgating transconductance varied linearly with buffer layer thickness for thicknesses of 1–3 μm. Incoporation of a thin superlattice at the substrate‐epi interface reduced the backgating by about 20%. A model consistent with these findings was developed by treating the substrate potential and buffer layer background doping as a perturbation which raises or lowers the subband energies in the potential well containing the two‐dimension electron gas.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
72.80.Ey III-V and II-VI semiconductors
73.40.Cg Contact resistance, contact potential

Picosecond luminescence measurements on fast GaAs Schottky diodes under changing circuit conditions

A. Von Lehmen and J. M. Ballantyne

Appl. Phys. Lett. 45, 767 (1984); http://dx.doi.org/10.1063/1.95373 (3 pages) | Cited 3 times

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Time‐resolved luminescence measurements on a GaAs Schottky diode with a transit dimension of 0.3 μm yield pulse width limited decay times reflecting fast carrier sweepout. In addition, using the same all‐optical technique, we have directly observed for the first time a slowing effect on transport in the device when monolithic inductors are introduced into the biasing circuit.
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85.30.Hi Surface barrier, boundary, and point contact devices
78.40.Fy Semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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