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15 Oct 1984

Volume 45, Issue 8, pp. 813-914

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15‐mJ pulses from a 4.3‐μm CO2 laser

R. K. Brimacombe and J. Reid

Appl. Phys. Lett. 45, 813 (1984); http://dx.doi.org/10.1063/1.95427 (3 pages) | Cited 5 times

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Output energies of 15 mJ/pulse and peak powers of 100 kW/pulse are obtained from a 4.3‐μm CO2 laser which is optically pumped by a 10‐μm sequence‐band CO2 laser. The dominant operating characteristics of the laser and their effect on output energy, line tunability, and scalability are discussed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Buried ion‐exchanged optical waveguides with refractive index profiles controlled by rediffusion

Kazutaka Baba, Kazuo Shiraishi, Osamu Hanaizumi, and Shojiro Kawakami

Appl. Phys. Lett. 45, 815 (1984); http://dx.doi.org/10.1063/1.95428 (3 pages) | Cited 2 times

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New buried optical waveguides whose refractive index profiles can be controlled by rediffusion are formed by the ion exchange and rf sputtering technique. A buried waveguide with a nearly symmetric refractive index distribution and a new slowly tapered structure are fabricated.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

High‐power operation of index‐guided visible GaAs/GaAlAs multiquantum well lasers

K. Uomi, S. Nakatsuka, T. Ohtoshi, Y. Ono, N. Chinone, and T. Kajimura

Appl. Phys. Lett. 45, 818 (1984); http://dx.doi.org/10.1063/1.95429 (3 pages) | Cited 8 times

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Stable transverse mode operation has been realized for the first time in visible (780 nm) multiquantum well lasers composed of seven 3‐nm‐thick GaAs wells separated by six 5‐nm‐thick Ga0.8Al0.2As barriers grown by metalorganic chemical vapor deposition. A self‐aligned structure with a built‐in optical waveguide to stabilize the transverse mode is fabricated by a two‐step epitaxial technique. Low threshold current (35 mA), high output power (up to 40 mW) in the fundamental transverse mode, and a very low degradation rate at 70 °C have been confirmed.
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42.55.Px Semiconductor lasers; laser diodes

Fine structures in the broadened line of distributed feedback lasers under high‐speed direct modulation

Yuzo Yoshikuni, Takashi Matsuoka, George Motosugi, and Naoaki Yamanaka

Appl. Phys. Lett. 45, 820 (1984); http://dx.doi.org/10.1063/1.95430 (3 pages) | Cited 6 times

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Precise observation of the single longitudinal mode spectrum for distributed feeedback lasers revealed fine structures when the spectrum was broadened by high‐speed modulation. A dynamic simulation can explain reasonably the above behavior if the model takes into account the carrier density modulation enhanced by the relaxation oscillation. In this letter, experimental results where both modulation depth and speed were varied are described along with a calculated result.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Efficient multiple visible light generation in a polarization‐preserving optical fiber pumped by a 1.064‐μm yttrium aluminum garnet laser

Masataka Nakazawa, Takashi Nakashima, and Shigeyuki Seikai

Appl. Phys. Lett. 45, 823 (1984); http://dx.doi.org/10.1063/1.95431 (3 pages) | Cited 8 times

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Visible light generation by sum‐frequency mixings in a polarization‐preserving fiber has been observed with pumping by a 1.064‐μm Q‐switched, and mode‐locked neodymium:yttrium aluminum garnet laser. The visible light has been efficiently generated when the fast axis of the test fiber was excited. The total conversion efficiency from the pump to all visible wavelengths amounts to 1% with a mode‐locked pump peak power of 18 kW. By fusion splicing two fibers with different visible emission lines, we have succeeded in combining those two visible spectra into one spectrum.
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42.81.-i Fiber optics
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.70.Ce Glasses, quartz

Frequency stabilization of 1.5‐μm InGaAsP distributed feedback laser to NH3 absorption lines

T. Yanagawa, S. Saito, and Y. Yamamoto

Appl. Phys. Lett. 45, 826 (1984); http://dx.doi.org/10.1063/1.95432 (3 pages) | Cited 33 times

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NH3 absorption lines due to vibration‐rotation transitions are observed at 1.50–1.54 μm by using an InGaAsP superluminescent diode. A 1.5‐μm InGaAsP distributed feedback (DFB) laser is frequency stabilized to an NH3 linear absorption line at 15196 Å. Frequency stability of σ(2,τ)=8×10−11τ−1 is achieved for an averaging time range of 10 ms≤τ≤1 s. Such an absolute frequency‐stabilized DFB laser is useful for coherent optical system applications, since it is free from the longitudinal mode jumping which results from a wide range of temperature changes and long‐term device degradation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.50.-p Quantum optics
42.79.-e Optical elements, devices, and systems

Modulated transmittance and reflectance in crystalline electrochromic WO3 films: Theoretical limits

J. S. E. M. Svensson and C. G. Granqvist

Appl. Phys. Lett. 45, 828 (1984); http://dx.doi.org/10.1063/1.95415 (3 pages) | Cited 47 times

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A quantitative theory for the optical properties of crystalline electrochromic materials is introduced. It is based on the double injection model and includes ionized impurity scattering of free electrons. Solar and luminous properties are evaluated versus electron density for doped WO3 films. Our results point to the possibility of creating efficient ‘‘smart windows’’ with dynamic control of the inflow of radiant energy.
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75.20.Ck Nonmetals
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
81.40.Tv Optical and dielectric properties related to treatment conditions
72.20.Dp General theory, scattering mechanisms

Demonstration of optical bistability with intensity‐coupled high gain lasers

J. L. Oudar and R. Kuszelewicz

Appl. Phys. Lett. 45, 831 (1984); http://dx.doi.org/10.1063/1.95416 (3 pages) | Cited 4 times

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Competition between external beam amplification and normal laser action is shown to result in a new type of optical bistability in high gain lasers. With one dye laser in a delayed self‐extinction configuration, periodic pulsations are observed, showing the alternation of two quasi‐stable states. With a twin dye laser configuration, only one laser at a time could be above threshold due to their mutual coupling. Switching with subnanosecond rise time has been obtained in a purely optical way.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.By Design of specific laser systems
42.55.Mv Dye lasers
42.65.-k Nonlinear optics

Fundamental mode oscillation of a buried ridge waveguide laser array

S. Mukai, C. Lindsey, J. Katz, E. Kapon, Z. Rav‐Noy, S. Margalit, and A. Yariv

Appl. Phys. Lett. 45, 834 (1984); http://dx.doi.org/10.1063/1.95417 (2 pages) | Cited 23 times

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An eight‐element phase‐locked array of index‐guided separate confinement ridge AlGaAs diode lasers is fabricated. In this array the absorption of light in the region between lasers is negligible and the gain profile across the array is nearly uniform. Unlike most other arrays, this array oscillates in its fundamental mode. Stable radiation patterns of near diffraction‐limited single narrow beam with 1.6° width are obtained. The beam width approaches the theoretical limit for the present array structure.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

Carrier induced refractive index change in AlGaAs quantum well lasers

N. K. Dutta, N. A. Olsson, and W. T. Tsang

Appl. Phys. Lett. 45, 836 (1984); http://dx.doi.org/10.1063/1.95418 (2 pages) | Cited 22 times

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Measurements of the carrier induced refractive index change in AlGaAs quantum well lasers are presented which show that the guided mode in single quantum well lasers exhibits a small (Δn/ΔN∼−3×10−22 cm3) carrier induced change in refractive index. This is more than an order of magnitude smaller than the corresponding value for conventional active layer lasers. The measured ΔnA/ΔN ∼−7×10−21 cm3 in the active layers of AlGaAs multiquantum well structures. The measured index changes of the guided mode at threshold (Δnth) are −5.6×10−3 and −7.6×10−3 for the single quantum well and multiquantum well lasers, respectively. This should be compared with a value of ∼1.2×10−2 for conventional active layer lasers. These results suggest that single frequency sources fabricated using real index guided single quantum well active layers may have improved frequency stability under direct current modulation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Nonlinear mode coupling in birefringent fiber: Application to optical pulse reshaping

Ken‐ichi Kitayama, Yasuo Kimura, and Shigeyuki Seikai

Appl. Phys. Lett. 45, 838 (1984); http://dx.doi.org/10.1063/1.95419 (3 pages)

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It is theoretically shown that intensity dependent mode coupling is induced by nonlinear birefringence between two orthogonally polarized modes in optical fibers in such way that the weak light field polarized along the slow axis of the birefringent fiber couples more strongly to the other mode having the perpendicular polarization than to the strong light field. By utilizing the mode coupling property it is possible in a birefringent single‐mode fiber to isolate the optical pulse launched, say, in the LPx01 mode from the precursor and tailing edges or weak background by coupling them to the LPy01 mode. This will readily lead to the application of birefringent fibers to optical pulse compression. In this scheme of pulse reshaping, the loss of the LPy01 mode is required to be much larger than that of the LPx01 mode in order to avoid the unnecessary coupling back to the main mode.
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42.25.Lc Birefringence
42.81.-i Fiber optics
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Ce Glasses, quartz

Improved mode extinction modulator using a Ti in‐diffused LiNbO3 channel waveguide

P. R. Ashley and W. S. C. Chang

Appl. Phys. Lett. 45, 840 (1984); http://dx.doi.org/10.1063/1.95420 (3 pages) | Cited 9 times

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An efficient, linear mode extinction modulator has been demonstrated using a weakly guided, near cutoff, channel waveguide. Modulation slopes as high as 16% per volt have been measured. Deviation from a linear voltage‐intensity relationship of less than 1% has been observed over a 77% modulation range. Over 97% modulation has been achieved with ±4 V applied. An optical bias is also demonstrated. A coupled mode analysis for the modulator is reported which includes propagation loss effects.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers

Fourier‐transform‐limited, single‐mode picosecond optical pulse generation by a distributed feedback InGaAsP diode laser

Noriaki Onodera, Hiromasa Ito, and Humio Inaba

Appl. Phys. Lett. 45, 843 (1984); http://dx.doi.org/10.1063/1.95421 (3 pages) | Cited 5 times

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The first generation of bandwidth‐limited, single‐mode ultrashort optical pulses with excellent coherency from a distributed feedback InGaAsP diode laser at 1.3 μm by the method of strong rf modulation superimposed on the dc bias current is reported. It was realized only by the laser diode itself with no requirement of any other optical elements or external cavity or careful optical control. The measurement of time‐bandwidth product of the generated coherent picosecond pulses at 500‐MHz modulation gave the value of 0.38 for Lorentzian pulse shape with a full width at half‐maximum of nearly 34 ps, which proved definitely the Fourier‐transform‐limited character. By changing the dc bias current from positive to negative, the pulse width was demonstrated to be continuously controllable over a range of approximately twice to three times depending upon the modulation frequency.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Phase sensitive scanning optical microscope

R. L. Jungerman, P. C. D. Hobbs, and G. S. Kino

Appl. Phys. Lett. 45, 846 (1984); http://dx.doi.org/10.1063/1.95422 (3 pages) | Cited 10 times

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An electronically scanned optical microscope which quantitatively measures amplitude and phase is described. The system is insenstive to mechanical vibrations. The phase infromation makes it possible to measure surface height variations with an accuracy of better than 100 Å and can also be used to improve the lateral resolution.
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61.72.Nn Stacking faults and other planar or extended defects
61.72.U- Doping and impurity implantation
61.72.Yx Interaction between different crystal defects; gettering effect
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Electronic excitations in collision cascades and the ionization of sputtered particles

Z. Šroubek

Appl. Phys. Lett. 45, 849 (1984); http://dx.doi.org/10.1063/1.95423 (3 pages) | Cited 11 times

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The electronic temperature Te in collision cascades is calculated for various materials bombarded with keV ions. The calculation is based on a simple form of the electron transport theory. The theoretical values of Te are compared with values inferred from secondary ion mass spectroscopy data.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)

Growth of amorphous Ti2O3 layers by laser‐induced oxidation

R. Merlin and T. A. Perry

Appl. Phys. Lett. 45, 852 (1984); http://dx.doi.org/10.1063/1.95424 (2 pages) | Cited 3 times

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Amorphous Ti2O3 films with thicknesses ≳103 Å have been obtained by cw laser irradiation of Ti50Zr10Be40 exposed to low oxygen pressures. In contrast, thermal oxidation of (nonirradiated) samples reveals scales composed of crystalline oxides. Raman scattering, x‐ray, and electron microscopy data on the layers are reported. It is suggested that irradiation leads to an enhanced oxidation rate preventing crystallization. Possible mechanisms of enhancement are discussed.
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81.05.Bx Metals, semimetals, and alloys
79.20.Ds Laser-beam impact phenomena
68.55.-a Thin film structure and morphology
81.05.Kf Glasses (including metallic glasses)

Strong 〈100〉 texture formation of polycrystalline silicon films on amorphous insulator by laser recrystallization

Koji Egami and Masakazu Kimura

Appl. Phys. Lett. 45, 854 (1984); http://dx.doi.org/10.1063/1.95425 (3 pages) | Cited 6 times

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This letter demonstrates the optimization for the strong 〈100〉 texture formation of low pressure chemical vapor deposited (700 °C) polycrystalline silicon films on SiO2/backing substrates such as quartz glass, sapphire, and silicon by cw Ar ion laser recrystallization. We have examined the correlation of 〈100〉 texture formed with both the dwell time and the grain size. It has been found that the long dwell time (∼30 ms) and rather low laser power density are favorable for the formation of the strong 〈100〉 texture with lamellalike grains.
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68.55.-a Thin film structure and morphology
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Ds Laser-beam impact phenomena

Growth of MoSi2 with preferential orientation on (100) silicon

A. Perio, J. Torres, G. Bomchil, F. Arnaud d’Avitaya, and R. Pantel

Appl. Phys. Lett. 45, 857 (1984); http://dx.doi.org/10.1063/1.95426 (3 pages) | Cited 17 times

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Molybdenum has been evaporated under ultrahigh vacuum conditions on (100) silicon wafers. Molybdenum silicide MoSi2 was obtained either by deposition on substrates at room temperature and subsequent annealing in situ at 650 °C or by metal deposition on substrates heated to 650 °C. Structural characterization was carried out by x‐ray diffraction and transmission electron microscopy. The silicide resulting from the first operating process is a random, polycrystalline material. On the contrary, growth of MoSi2 with well‐defined epitaxial relationship occurs on the heated substrates.
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68.55.-a Thin film structure and morphology
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Ion‐enhanced gas‐surface kinetics: The Si‐Cl2‐Ar+ system

Rebecca A. Rossen and Herbert H. Sawin

Appl. Phys. Lett. 45, 860 (1984); http://dx.doi.org/10.1063/1.95433 (3 pages) | Cited 6 times

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The mechanisms of ion‐enhanced gas‐surface etching reactions have been investigated by the simultaneous exposure of 300‐K silicon to coincident beams of Cl2 and modulated 1‐keV Ar+ ions. The transient emission at low modulation frequencies suggests that a chlorinated film several atomic layers in depth is formed. SiClx emission products are thought to be formed on and within the film by sequential chlorination and are released in subsequent sputtering events. SiCl, which is believed to be emitted from surface of this film, exhibits a lower emission energy (≊0.03 eV) than SiCl4, which is emitted from within the film (≊4.0 eV).
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.65.-b Surface treatments
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Residual photocurrent decay in hydrogenated amorphous silicon

K. Shimakawa and Y. Yano

Appl. Phys. Lett. 45, 862 (1984); http://dx.doi.org/10.1063/1.95434 (3 pages) | Cited 3 times

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The residual photocurrent decay following the steady photoexcitation was measured in hydrogenated amorphous silicon as a function of temperature. The data were analyzed by the Fermi level analysis first outlined by Rose [RCA Rev. 12, 362 (1951)]. By introducing a time‐dependent recombination rate (∼t−(1−α)), we obtained a good agreement between density of states values obtained from the photoconductivity decay and from space‐charge‐limited current measurements.
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72.40.+w Photoconduction and photovoltaic effects
72.80.Ng Disordered solids
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
71.20.-b Electron density of states and band structure of crystalline solids

Amorphous silicon solar cells fabricated by photochemical vapor deposition

Tatsuya Tanaka, Woo Yeol Kim, Makoto Konagai, and Kiyoshi Takahashi

Appl. Phys. Lett. 45, 865 (1984); http://dx.doi.org/10.1063/1.95435 (3 pages) | Cited 13 times

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Hydrogenated amorphous silicon solar cells were fabricated by photochemical vapor deposition. Wide optical band‐gap (∼2.0 eV) hydrogenated amorphous silicon carbide was employed for the p layer. Acetylene (C2H2) or dimethylsilane (Si(CH3)2H2) was used as a carbon source instead of methane which is usually used in a glow discharge process. Although p, i, and n layers were deposited in a single reaction chamber, the solar cell showed high‐energy conversion efficiency of 8.29% under AM1, 100‐mW/cm2 insolation. The distribution of boron atoms in the solar cell was analyzed by secondary ion mass spectroscopy. The boron content in the i layer was of the order of 1016 cm−3. This is comparable to that in the i layer of the solar cell fabricated by the glow discharge system with separated three reaction chambers.
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84.60.Jt Photoelectric conversion
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Back‐side illuminated Ga0.47In0.53As photoconductive detectors and associated dark zones

C. Y. Chen, H. M. Cox, P. A. Garbinski, and S. G. Hummel

Appl. Phys. Lett. 45, 867 (1984); http://dx.doi.org/10.1063/1.95436 (3 pages) | Cited 1 time

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We report the first back‐side illuminated Ga0.47In0.53As photoconductive detector. The scheme of back‐side illumination has led to an improvement of 1.5 dB in responsivity over front‐side illumination. Furthermore, we observed dark zones where responsivities showed a minimum in the vicinity of negative electrodes. Responsivities appeared to peak at the positions beneath the positive electrodes due to a reduction in electron transit time. The upper limit of electrode widths to achieve high‐performance back‐side illuminated devices was also calculated.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects

Photoluminescence and x‐ray photoelectron spectroscopy measurements of InP surface treated by acid and base solutions

S. K. Krawczyk and G. Hollinger

Appl. Phys. Lett. 45, 870 (1984); http://dx.doi.org/10.1063/1.95437 (3 pages) | Cited 24 times

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A very strong effect up to three orders of magnitude of chemical treatment on photoluminescence (PL) intensity from InP surface is demonstrated by in situ and ex situ measurements. It is found that InP treatment by acid solutions gives generally high PL intensity, in contrast to the base solutions which give low PL amplitude. Very detrimental effect of H2O2 in H2O and/or in presence of bases is demonstrated. Similar results are obtained in situ, in liquid ambiance and ex situ, immediately after treatment. A reduction of the PL signal is always observed after low‐temperature (150 °C) annealing in vacuum (10−6 Torr). Although HF, HNO3, and H2SO4 give similar PL intensity immediately after treatment, a great difference between these treatments becomes apparent after annealing. The amount and nature of oxide layers left by various treatments on In P surface were evaluated by x‐ray photoelectron spectroscopy. The average oxide thickness and composition do not seem to be directly correlated with fast surface state density and PL intensity. Our results suggest that InP surface treatment by oxidizing acid solution may be the most promising for device application.
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81.65.-b Surface treatments
78.40.Fy Semiconductors
73.40.Mr Semiconductor-electrolyte contacts

Perpendicular magnetic anisotropy of Tb‐Co amorphous films sputtered in H2‐added Ar gas

T. Niihara, S. Takayama, K. Kaneko, and Y. Sugita

Appl. Phys. Lett. 45, 872 (1984); http://dx.doi.org/10.1063/1.95438 (3 pages) | Cited 3 times

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Very large perpendicular magnetic anisotropy has been observed in Tb‐Co amorphous films deposited by nonbiased rf sputtering using H2‐added Ar gas. As the hydrogen partial pressure of the gas increases, the perpendicular anisotropy constant Ku increases remarkably and rectangular Kerr hysteresis loop appears. For 10% H2, Ku reaches near 105 J/m3, which is sufficient to direct the magnetization perpendicular to the film plane. These films can be used as magneto‐optical recording media because of the relatively large Kerr rotation angle and coercive force. The mechanism of increasing Ku remains to be clarified.
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75.30.Gw Magnetic anisotropy
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Kj Amorphous and quasicrystalline magnetic materials
78.20.Ls Magneto-optical effects

Solid phase epitaxy of evaporated amorphous silicon films

M. Milosavljević, C. Jeynes, and I. H. Wilson

Appl. Phys. Lett. 45, 874 (1984); http://dx.doi.org/10.1063/1.95439 (3 pages) | Cited 4 times

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Amorphous silicon films were deposited in an electron beam evaporator. Substrates of silicon (100) wafers with predeposited epitaxial films were held at 380 °C to avoid porosity. Processing of the films before annealing may include implantation. Solid state epitaxy is then achieved by annealing at 600 °C for 30 min.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
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