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1 Nov 1984

Volume 45, Issue 9, pp. 919-999

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New long‐wavelength photodetector based on reverse‐biased doping superlattices

Y. Horikoshi, A. Fischer, and K. Ploog

Appl. Phys. Lett. 45, 919 (1984); http://dx.doi.org/10.1063/1.95460 (3 pages) | Cited 9 times

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Show Abstract
A new GaAs photodetector of low capacitance and with high sensitivity in the whole 0.8–1.4‐μm wavelength range has been fabricated from GaAs doping superlattices grown by molecular beam epitaxy. The highly doped yet semi‐insulating superlattice allows application of high reverse bias via selective n+ and p+ electrodes also at room temperature. The excellent photoresponse of the totally depleted device at energies far below the GaAs energy gap arises from the existence of pronounced tail states in the forbidden gap region of the superlattice. Under operating conditions the capacitance of the detector depends only on the electrode geometry and can thus be kept extremely low. This implies high‐speed response of the device.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Infrared absorption and low‐temperature photoluminescence spectra of GaAs grown by molecular beam epitaxy

K. Akimoto, M. Dohsen, M. Arai, and N. Watanabe

Appl. Phys. Lett. 45, 922 (1984); http://dx.doi.org/10.1063/1.95461 (3 pages) | Cited 15 times

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The variation in the intensity of the excitonlike luminescence lying 5–10 meV below the free‐exciton energy value specific to molecular beam epitaxially grown GaAs was studied under various growth conditions. The intensity of the luminescence increases with increasing CO in the background and/or decreasing As4/Ga flux ratio. Fourier transform infrared spectra indicated the existence of polynuclear carbonyls in the GaAs. The excitonlike luminescence may be caused by radiative recombination of excitons bound to CO incorporated from the ambient on an As site.
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71.35.-y Excitons and related phenomena
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
81.40.Tv Optical and dielectric properties related to treatment conditions

Low loss Ge‐Se chalcogenide glass optical fibers

T. Katsuyama, K. Ishida, S. Satoh, and H. Matsumura

Appl. Phys. Lett. 45, 925 (1984); http://dx.doi.org/10.1063/1.95462 (3 pages) | Cited 19 times

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Infrared optical fibers composed of Ge‐Se based chalcogenide glass have been fabricated by using a specially designed drawing apparatus. Transmission loss of less than 1 dB/m was observed in the IR region of 2–10 μm except at 4.5 μm. The minimum loss is 0.2 dB/m at 5.5‐μm wavelength.
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42.81.-i Fiber optics

An embedded stripe Be‐implanted GaAs/GaAlAs double heterostructure laser grown by metalorganic chemical vapor deposition

D. Fekete

Appl. Phys. Lett. 45, 927 (1984); http://dx.doi.org/10.1063/1.95463 (3 pages) | Cited 1 time

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A planar GaAs/GaAlAs double heterostructure stripe geometry laser with laterally effective step change of the refraction index is described. The planar structure is achieved by regrowing an embedded stripe selectively on a Be‐implanted stripe, using metalorganic chemical vapor deposition. The near‐field and the far‐field patterns confirm the index guiding mechanism of the light. The threshold current is comparable to those of similar lasers grown by uninterrupted growth process either by liquid phase epitaxy or by metalorganic chemical vapor deposition.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.Jb Light-emitting devices

Mode locking of excimer laser pumped dye lasers

Masayoshi Watanabe, Shuntaro Watanabe, and Akira Endoh

Appl. Phys. Lett. 45, 929 (1984); http://dx.doi.org/10.1063/1.95464 (3 pages) | Cited 2 times

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Picosecond pulses have been generated over a broad spectral range with passive mode locking of dye lasers pumped by a long‐pulse XeCl laser. The rapid reduction of pulse duration to less than 10 ps was confirmed to occur within a few tens of round trips. The characteristics of mode locking were intensively investigated at the multiple wavelengths of rare‐gas halide lasers such as KrF, ArF, and XeCl lasers, resulting in pulse durations of 5.5 ps at 497 nm and 7 ps at 580 nm, respectively.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Optical bistability due to induced absorption: Propagation dynamics of excitation profiles

S. W. Koch, H. E. Schmidt, and H. Haug

Appl. Phys. Lett. 45, 932 (1984); http://dx.doi.org/10.1063/1.95465 (3 pages) | Cited 17 times

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For an optically bistable system with induced absorption the transport equations for the light intensity and the excitation density are solved. Under pulse operation a kink in the excitation density is found, which moves discontinuously in the beam direction and causes a sawtooth variation in the transmitted intensity.
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63.10.+a General theory
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
71.20.Mq Elemental semiconductors

A new class of instabilities in a diode laser with an external cavity

Hitoshi Kawaguchi and Kenju Otsuka

Appl. Phys. Lett. 45, 934 (1984); http://dx.doi.org/10.1063/1.95447 (3 pages) | Cited 2 times

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A new class of instabilities is reported in a semiconductor laser which is coupled to an external optical cavity with an intracavity Fabry–Perot etalon. Power spectra of the laser suggest periodic oscillation and its subharmonic modulations. The calculated results, using the van der Pol equation which includes a carrier density‐dependent refractive index, are outlined to explain the observed subharmonic modulation phenomena.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Frequency modulation in the cleaved‐coupled‐cavity laser

William Streifer, David Yevick, Robert D. Burnham, and Thomas L. Paoli

Appl. Phys. Lett. 45, 937 (1984); http://dx.doi.org/10.1063/1.95448 (3 pages)

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Enhanced frequency modulation in cleaved‐coupled‐cavity lasers is analyzed and results for frequency deviation per unit modulator current and lasing spectra are presented. Strong sensitivity to gap spacing and bias point are reported and nonlinearities are shown to limit distortionless analog frequency modulation. In a typical case, a 40‐μA peak modulation current produces a 200‐MHz maximum frequency deviation with 2% distortion.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Optical recording by reducing a metal salt complexed to a polymer host

A. Auerbach

Appl. Phys. Lett. 45, 939 (1984); http://dx.doi.org/10.1063/1.95449 (3 pages)

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An alternative approach which makes use of a laser to reduce a polymer/complexed metal ion matrix to generate small reflective surfaces is described. The thermal energy provided by the laser promotes an electron transfer from the polymer to the metal ion to form metal. Since the reduction occurs within the thermal profile of the focused laser beam, the reflective area has a diameter close to that of the beam waist. We have formed ∼l‐μm‐diam reflective areas using a pulsed diode laser. Application of this method to optical disk recording is discussed.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
42.62.-b Laser applications
79.20.Ds Laser-beam impact phenomena
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

High‐power gain‐guided InGaAsP laser array

N. K. Dutta, S. G. Napholtz, R. B. Wilson, R. L. Brown, T. Cella, and D. C. Craft

Appl. Phys. Lett. 45, 941 (1984); http://dx.doi.org/10.1063/1.95450 (3 pages) | Cited 4 times

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We have fabricated InGaAsP gain‐guided laser arrays emitting at 1.3 μm. These devices have threshold currents in the range 300–400 mA at 30 °C and have been operated to pulsed output powers as high as 400 mW. More than 100 mW of output power has been obtained up to an ambient temperature of 60 °C. The lasers emit in multilongitudinal modes with a far‐field divergence of 20°×35°. A gain‐guided InGaAsP laser array of the type described here can be used in some applications requiring high‐power lasers emitting at 1.3 μm.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Mode locking a Ti:LiNbO3‐InGaAsP/InP composite cavity laser with an integrated high‐speed directional coupler switch

R. C. Alferness, G. Eisenstein, S. K. Korotky, R. S. Tucker, L. L. Buhl, I. P. Kaminow, C. A. Burrus, and J. J. Veselka

Appl. Phys. Lett. 45, 944 (1984); http://dx.doi.org/10.1063/1.95451 (3 pages) | Cited 5 times

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We propose and demonstrate the first Ti:LiNbO3 waveguide‐InGaAsP/InP composite cavity laser. Mode locked optical pulses shorter than 22 ps have been generated at repetition rates up to 7.2 GHz by sinusoidally driving the integrated traveling‐wave directional coupler switch.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Synthesis of rare gas‐halide mixtures resulting in efficient XeF(C→A) laser oscillation

W. L. Nighan, F. K. Tittel, W. L. Wilson, N. Nishida, Y. Zhu, and R. Sauerbrey

Appl. Phys. Lett. 45, 947 (1984); http://dx.doi.org/10.1063/1.95452 (3 pages) | Cited 5 times

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Significantly improved XeF(C→A) laser performance has been achieved using electron beam excitation of complex, multicomponent gas mixtures specifically tailored so as to reduce medium transient absorption in the blue‐green region. Use of Ar and Kr together as the effective rare gas buffer‐energy transfer species, along with a combination of NF3 and F2 to produce the desired F‐donor molecule characteristics, has permitted synthesis of near optimum medium properties for which XeF(C) is produced efficiently while transient absorption is minimized. With this technique we have achieved laser pulse energy density and intrinsic efficiency of 2.2±0.3 J/l and ∼1.5%, respectively, values that are comparable to those of the B→X rare gas‐halide lasers.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
34.80.Gs Molecular excitation and ionization
34.80.Dp Atomic excitation and ionization

Quantum noise and dynamics in quantum well and quantum wire lasers

Yasuhiko Arakawa, Kerry Vahala, and Amnon Yariv

Appl. Phys. Lett. 45, 950 (1984); http://dx.doi.org/10.1063/1.95453 (3 pages) | Cited 98 times

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We calculate the relaxation oscillation corner frequency fr and the linewidth enhancement factor α for both a quantum well and a quantum wire semiconductor laser. A comparison of the results to those of a conventional double heterostructure device indicates that fr can be enhanced by 2× in the quantum well case and 3× in the quantum wire case while α is reduced in both cases.
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42.55.Px Semiconductor lasers; laser diodes
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
72.70.+m Noise processes and phenomena
42.50.-p Quantum optics

Photoacoustic measurement of thermal properties of a thin polyester film

André Lachaine and Patrick Poulet

Appl. Phys. Lett. 45, 953 (1984); http://dx.doi.org/10.1063/1.95454 (2 pages) | Cited 60 times

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The phase and the amplitude of the photoacoustic signal are measured as a function of chopping frequency for a thin polyester film, using two different backing materials (water and ethanol). Analysis of the results shows agreement with Rosencwaig–Gersho theory [J. Appl. Phys. 47, 64 (1976)] and provides values of the thermal diffusivity and the thermal effusivity of the sample.
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05.70.Ce Thermodynamic functions and equations of state
68.60.-p Physical properties of thin films, nonelectronic
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Directional laser recrystallization of eutectic Si‐CoSi2 thin films

B. M. Ditchek and T. Emma

Appl. Phys. Lett. 45, 955 (1984); http://dx.doi.org/10.1063/1.95455 (3 pages) | Cited 2 times

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A method for the preparation of lamellae of Si and CoSi2 using thin‐film eutectic solidification techniques is presented. In the experiment, a laser was used to melt and directionally solidify an alloyed film of Co and polycrystalline Si on a thermally oxidized Si wafer. Using traverse rates as rapid as 8 cm/s, 50‐nm‐wide CoSi2 stripes, separated by comparable amounts of Si are obtained. An analysis of the chemistry and microstructure of the film before and after laser scanning is discussed.
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68.55.-a Thin film structure and morphology
79.20.Ds Laser-beam impact phenomena
68.60.-p Physical properties of thin films, nonelectronic
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Analysis of diffusion in polymers by forward recoil spectrometry

Peter J. Mills, Peter F. Green, Christopher J. Palmstrøm, James W. Mayer, and Edward J. Kramer

Appl. Phys. Lett. 45, 957 (1984); http://dx.doi.org/10.1063/1.95456 (3 pages) | Cited 73 times

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We demonstrate that an ion beam analysis method that detects the energies of forward recoiling deuterons can be used to measure concentration profiles and tracer diffusion coefficients D∗ of a deuterated polymer (d‐polystyrene) diffusing into its hydrogenated analog. The D∗’s decrease as M−2 as predicted by the reptation theory of polymer diffusion and agree in magnitude with both the theory and marker displacement measurements of D∗ in the same system.
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66.10.C- Diffusion and thermal diffusion
61.41.+e Polymers, elastomers, and plastics
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
82.80.-d Chemical analysis and related physical methods of analysis

Electroluminescence in thin‐film CaS:Ce

Virendra Shanker, Shosaku Tanaka, Masatoshi Shiiki, Hiroshi Deguchi, Hiroshi Kobayashi, and Hiroshi Sasakura

Appl. Phys. Lett. 45, 960 (1984); http://dx.doi.org/10.1063/1.95457 (2 pages) | Cited 25 times

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We report a double insulated CaS:Ce thin‐film electroluminescent (EL) device which emits a bright green EL due to Ce3+ luminescent centers, being characteristic of parity allowed 5d–4f transitions. A brightness level of 500 cd/m2 and emission efficiency of 0.11 lm/W have been obtained under 5‐kHz sinusoidal voltage excitation. The CaS:Ce thin film has been fabricated by coevaporation of CaS and sulfur.
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78.60.Fi Electroluminescence
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.60.Jb Light-emitting devices

Donor identification in liquid phase epitaxial indium phosphide

M. S. Skolnick, P. J. Dean, S. H. Groves, and E. Kuphal

Appl. Phys. Lett. 45, 962 (1984); http://dx.doi.org/10.1063/1.95458 (3 pages) | Cited 18 times

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High resolution photoluminescence spectroscopy at 4.2 K and at a magnetic field of 9.7 T is employed to resolve and identify residual shallow donors in liquid phase epitaxial InP. Sulphur is found to be the dominant inadvertent contaminant in high purity material prepared from growth solutions which have undergone long baking treatments. Silicon is also observed in most samples, but at significantly lower levels than sulphur.
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78.40.Fy Semiconductors
78.30.-j Infrared and Raman spectra

Yellow‐emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition

M. Ikeda, M. Honda, Y. Mori, K. Kaneko, and N. Watanabe

Appl. Phys. Lett. 45, 964 (1984); http://dx.doi.org/10.1063/1.95459 (3 pages) | Cited 7 times

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Yellow‐emitting pulsed laser operation of an Al0.37Ga0.15In0.48P/Al0.16Ga0.36In0.48P/ Al0.37Ga0.15In0.48P double heterostructure laser diode was obtained at 77 K. The emission wavelength was 579 nm. The threshold current density was 5.6 kA/cm2 for a diode with a Si3N4 insulated 8‐μm‐wide and 250‐μm‐long stripe geometry. The device was made from a DH wafer grown by conventional metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials.
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42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.45.+h Stimulated emission

Excimer laser enhanced nitridation of silicon substrates

Toshihiro Sugii, Takashi Ito, and Hajime Ishikawa

Appl. Phys. Lett. 45, 966 (1984); http://dx.doi.org/10.1063/1.95466 (3 pages) | Cited 24 times

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Silicon direct nitridation has been successfully done using purified ammonia gas and an ArF excimer laser (λ=193 nm). Direct nitride films were grown at a substrate temperature of 400 °C and a laser pulse energy of 15 mJ/pulse cm2. As far as Auger signal intensities are concerned, there is little difference between the excimer laser enhanced nitrided films grown at 400 °C and thermally nitrided films grown at 1000 °C. The maximum film thickness grown is limited to 2.5 nm at 400 °C by diffusion of nitridation species across the grown film. The temperature rise on the substrate surface irradiated by the laser was calculated and found to be around 50 °C. Therefore, the thermal effect of the laser irradiation is of little significance in this experiment. The photochemically dissociated products of ammonia molecules were investigated by a quadrupole mass analyzer. The photochemically generated NH2 radicals seem to enhance the nitridation.
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68.55.-a Thin film structure and morphology
82.50.-m Photochemistry
79.20.Ds Laser-beam impact phenomena
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Impact ionization rates for electrons and holes in Al0.48In0.52As

F. Capasso, K. Mohammed, K. Alavi, A. Y. Cho, and P. W. Foy

Appl. Phys. Lett. 45, 968 (1984); http://dx.doi.org/10.1063/1.95467 (3 pages) | Cited 13 times

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The first measurement of the impact ionization rates for electrons and holes in Al0.48In0.52As is reported. Photomultiplication measurements in pin avalanche photodiodes give α/β≊2.5–3.0 in the electric field range 3.3×105 V/cm≤F≤4.3×105 V/cm. This material can therefore be used to implement a potentially high‐performance, long‐wavelength avalanche photodiode, with separate absorption and multiplication regions and a high‐low electric field profile (HI‐LO SAM APD).
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85.60.Dw Photodiodes; phototransistors; photoresistors
72.70.+m Noise processes and phenomena
72.40.+w Photoconduction and photovoltaic effects
71.35.-y Excitons and related phenomena

Hydrogen passivation of silicon sheet solar cells

Y. Simon Tsuo and Joseph B. Milstein

Appl. Phys. Lett. 45, 971 (1984); http://dx.doi.org/10.1063/1.95468 (3 pages) | Cited 15 times

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Significant improvements in the efficiencies of dendritic web and edge‐supported‐pulling silicon sheet solar cells have been obtained after hydrogen ion beam passivation for a period of ten minutes or less. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance. The silicon sputter rate for constant ion beam flux of 0.60±0.05 mA/cm2 exhibits a maximum at approximately 1400‐eV ion beam energy.
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84.60.Jt Photoelectric conversion
61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects
81.65.-b Surface treatments

Raman scattering from molecular beam epitaxially grown superlattices of diluted magnetic semiconductors

S. Venugopalan, L. A. Kolodziejski, R. L. Gunshor, and A. K. Ramdas

Appl. Phys. Lett. 45, 974 (1984); http://dx.doi.org/10.1063/1.95469 (3 pages) | Cited 22 times

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We report the first Raman scattering study of Cd1−xMnxTe superlattices. The films are grown by molecular beam epitaxy. Brillouin zone‐folding effects on LA phonons, resonant scattering by LO phonons, and the magnetic field‐induced shift of the photoluminescence peak are reported. The latter yields an effective electronic g factor of ∼100, comparable to that of Cd1−xMnxTe bulk crystals. No collective magnetic excitation was detected at zero field even at 5 K in the superlattices studied. However, the Raman paramagnetic resonance of Mn2+ ions could be excited in an applied field. The implications of this result for magnetic phase transitions within superlattice layers are briefly mentioned.
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78.30.Hv Other nonmetallic inorganics
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
68.55.-a Thin film structure and morphology
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Complementary metal‐oxide‐silicon field‐effect transistors fabricated in 4‐MeV boron‐implanted silicon

K. W. Terrill, P. F. Byrne, C. Hu, and N. W. Cheung

Appl. Phys. Lett. 45, 977 (1984); http://dx.doi.org/10.1063/1.95470 (3 pages) | Cited 4 times

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Boron was implanted into p‐type (100) silicon at an energy of 4 MeV to create a layer of heavily doped silicon centered at a depth of 5.2 μm below the surface. Both n‐channel and p‐channel metal‐oxide‐silicon, field‐effect transistors (MOSFET’s) and various diode structures were fabricated over this implanted region by using a 3‐μm complementary MOSFET (CMOS) technology. The results show that the implanted silicon is recrystallized to a device quality state. No increase in diode leakage or degradation in MOSFET device characteristics is observed. Experimental results show that this subdevice buried layer leads to a reduction of CMOS latch‐up susceptibility.
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85.30.Tv Field effect devices
61.72.U- Doping and impurity implantation
85.30.Kk Junction diodes
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Effect of surface irradiation, substrate temperature, and annealing on laser deposited silicon dioxide

P. K. Boyer, K. A. Emery, H. Zarnani, and G. J. Collins

Appl. Phys. Lett. 45, 979 (1984); http://dx.doi.org/10.1063/1.95471 (3 pages) | Cited 10 times

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A pulsed ArF laser is used to photochemically deposit thin films of silicon dioxide on silicon substrates. As the substrate temperature was increased during film deposition, the etch rate, dielectric constant, flatband voltage shift, and hydrogen bonding of the SiO2 film decreased while the refractive index, resistivity, and breakdown voltage increased. The etch rate and infrared absorbance of bonded hydrogen incorporated in the SiO2 film also decreased when surface photons impinged on the growing films or when a post‐deposition anneal was performed.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Tv Optical and dielectric properties related to treatment conditions
81.40.Rs Electrical and magnetic properties related to treatment conditions
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