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15 Jun 1985

Volume 46, Issue 12, pp. 1117-1189

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Passive and active mode locking of a semiconductor laser without an external cavity

K. Y. Lau, I. Ury, and A. Yariv

Appl. Phys. Lett. 46, 1117 (1985); http://dx.doi.org/10.1063/1.95727 (3 pages) | Cited 8 times

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This letter describes the first attempt to passively and actively mode lock a discrete semiconductor laser, i.e., one not coupled to an external cavity. Beat notes of the longitudinal modes of a 1.97‐mm‐long GaAlAs laser have been observed at 17.7 GHz. The spectral width of the beat note was approximately 100 kHz. Stable passive mode locking has been observed under appropriate operating conditions. Active mode locking by an externally injected microwave signal was also achieved.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Optical pulse compression to 8 fs at a 5‐kHz repetition rate

W. H. Knox, R. L. Fork, M. C. Downer, R. H. Stolen, C. V. Shank, and J. A. Valdmanis

Appl. Phys. Lett. 46, 1120 (1985); http://dx.doi.org/10.1063/1.95728 (2 pages) | Cited 70 times

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Single amplified 40‐fs optical pulses are compressed to 8‐fs duration at a 5‐kHz repetition rate using self‐phase modulation in a single‐mode optical fiber.
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42.81.-i Fiber optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
84.40.Ba Antennas: theory, components and accessories

Dilute magnetic semiconductor (Cd1−xMnxTe) quantum well laser

R. N. Bicknell, N. C. Giles‐Taylor, D. K. Blanks, J. F. Schetzina, N. G. Anderson, and W. D. Laidig

Appl. Phys. Lett. 46, 1122 (1985); http://dx.doi.org/10.1063/1.95729 (3 pages) | Cited 15 times

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In this letter we report the first observation of stimulated emission from an optically pumped multilayer structure in which Cd1−xMnxTe, a dilute magnetic semiconductor (DMS), serves as the active quantum well material. The DMS laser structure was grown by molecular beam epitaxy with an active region consisting of 25 Cd0.81Mn0.19Te quantum wells of thickness LZ=125 Å alternating with 24 Cd0.64Mn0.36Te barrier layers of thickness LB=40 Å. The DMS lasers operate in the visible (red) spectral region at 665–670 nm when pumped at T=15 K with a pulsed argon ion laser. The threshold for laser action occurs at a peak pump power density of about 2.0×104 W/cm2.
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78.45.+h Stimulated emission
42.55.Px Semiconductor lasers; laser diodes

Holographic‐grating acoustic devices

D. E. Oates, P. G. Gottschalk, and P. V. Wright

Appl. Phys. Lett. 46, 1125 (1985); http://dx.doi.org/10.1063/1.95730 (3 pages) | Cited 3 times

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We report observations of acoustic wave reflections by an optically produced holographic grating within iron‐doped LiNbO3. The stored hologram, through the electroacoustic effect, causes a spatially varying acoustic velocity change which can serve to reflect acoustic waves. We have demonstrated the reflection of bulk acoustic waves from a 4‐μm period grating in LiNbO3 with an iron doping of 0.015%. The acoustic frequency was 0.9 GHz. A strong interaction with a reflection coefficient of 4×10−4 per grating element was found. Memory retention exceeds the three months over which we have observed the effect. The reflections can be exploited to produce practical filters and resonators.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
42.40.My Applications
43.60.Sx Acoustic holography
42.79.Dj Gratings

Experimental characterization of a puff‐gas z‐pinch plasma prior to implosion

Richard S. Smith and Wesley O. Doggett

Appl. Phys. Lett. 46, 1128 (1985); http://dx.doi.org/10.1063/1.95731 (3 pages) | Cited 3 times

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An argon annular puff‐gas z‐pinch has been experimentally investigated during the early phase of the current pulse using a magnetic flux probe and streak interferometry. The current is seen to follow the flared outer edge of the gas jet and to be returned primarily at axial positions z<15 mm by six posts supporting the wire mesh anode. A theoretical estimate of the skin depth agrees with the measured ∼1‐cm thickness of the current sheath. The electron to neutral density ratio is determined to be peaked both near the posts and near the cathode.
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52.55.Ez Theta pinch
52.50.Dg Plasma sources

Epitaxial relations in CaxSr1−xF2 films grown on GaAs {111} and Ge(111) substrates

Kazuo Tsutsui, Hiroshi Ishiwara, Tanemasa Asano, and Seijiro Furukawa

Appl. Phys. Lett. 46, 1131 (1985); http://dx.doi.org/10.1063/1.95732 (3 pages) | Cited 15 times

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Epitaxial relations in CaxSr1−xF2 (0≤x≤1) films grown on GaAs(111), (111), and Ge(111) substrates were investigated by He+ ion channeling analysis and transmission electron microscopy. Though the lattice constants of GaAs and Ge are nearly the same, the relations were found to be completely different. That is, the lattice‐matched fluoride film on GaAs exhibited an orientation identical to that of the substrate (type A orientation), whereas the orientation of the film on Ge was rotated by 180° about the surface normal 〈111〉 axis (type B orientation). It was also found that the type A growth of the Cax Sr1−x F2 films is maintained in the whole range of x on the As face of GaAs, while the growth types are partially or totally inverted in the lattice‐mismatched fluoride films grown on the Ga face of GaAs and on Ge.
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68.55.-a Thin film structure and morphology
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

X‐ray double crystal diffraction study of porous silicon

I. M. Young, M. I. J. Beale, and J. D. Benjamin

Appl. Phys. Lett. 46, 1133 (1985); http://dx.doi.org/10.1063/1.95733 (3 pages) | Cited 57 times

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Depending on the dopant concentration, two distinct types of porous silicon can be formed during the anodization of silicon in hydrofluoric acid. A range of samples of both types of porous silicon has been investigated using x‐ray double crystal diffraction techniques. The crystal lattice of porous silicon is found to be tetragonally distorted. In the plane of the substrate, the interplanar spacing of the porous film is identical to that of the substrate but is increased in the direction normal to it. The increase is typically 700 ppm in the type of film formed on heavily doped silicon and 6000 ppm in that on lightly doped silicon. We propose that stresses, generated by the growth of a native oxide on the surface of the pores, are responsible for the observed increase in lattice parameter. The different interplanar spacings of the two types of film are related to the observed differences in their oxygen contents which are a consequence of their different surface area to volume ratios.
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61.66.Fn Inorganic compounds
61.05.C- X-ray diffraction and scattering
82.45.-h Electrochemistry and electrophoresis
81.65.-b Surface treatments

Vacancy‐Zn complexes in InP studied by positrons

G. Dlubek, O. Brümmer, F. Plazaola, P. Hautojärvi, and K. Naukkarinen

Appl. Phys. Lett. 46, 1136 (1985); http://dx.doi.org/10.1063/1.95734 (3 pages) | Cited 38 times

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Positron lifetime measurements have been performed in various InP crystals. The crystal doped with Zn to a concentration of 4.5×1018 cm−3 shows strong positron trapping by vacancy defects, but no vacancies are found in crystals doped with Zn to a lower concentration of 2×1018 cm−3 or doped with Sn, S, or Fe. The concentration of vacancy defects agrees well with the estimated number of neutral Zn atoms thus supporting strongly the idea that neutral Zn atoms are bound to complexes with P vacancies. The Zn‐vacancy complexes start to disappear above 400 °C.
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61.72.jd Vacancies
61.72.jj Interstitials
61.72.U- Doping and impurity implantation
78.70.Bj Positron annihilation

Low‐temperature characteristics of electron and hole ionization coefficients in (100) oriented Ga1−xInxAsyP1−y

Fukunobu Osaka, Takashi Mikawa, and Takao Kaneda

Appl. Phys. Lett. 46, 1138 (1985); http://dx.doi.org/10.1063/1.95735 (3 pages) | Cited 2 times

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Low‐temperature characteristics of electron and hole ionization coefficients, α and β, in four kinds of (100) oriented Ga1−x Inx Asy P1− y crystals have been derived from photomultiplication data measured on Ga1−x Inx Asy P1− y/InP diodes with arsenic compositions of 0, 0.28, 0.39, and 0.70 over the temperature range from room temperature (293 K) to liquid nitrogen temperature (77 K). It has been found that the increase rates of α and β in GaInAsP with lowering temperatures are 20–50% smaller than those in InP, and that the increase rate of β in a GaInAsP crystal is 15–25% smaller than that of α in the same crystal. These low‐temperature characteristics of α and β have been indicated to be explained by assuming alloy scattering influencing impact‐ionizing electrons and holes in quaternary alloy crystals in this temperature range.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.60.Dw Photodiodes; phototransistors; photoresistors
42.82.-m Integrated optics
85.30.De Semiconductor-device characterization, design, and modeling

Uniform and thermally stable AuGeNi ohmic contacts to GaAs

A. Callegari, E.T‐S. Pan, and M. Murakami

Appl. Phys. Lett. 46, 1141 (1985); http://dx.doi.org/10.1063/1.95736 (3 pages) | Cited 27 times

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An in situ rf sputter precleaning of the GaAs substrate before AuGeNi ohmic metal deposition yields contact resistance Rc=0.11 Ω mm at a peak doping of ∼1018/cm3. Excellent uniformity and thermal stability are achieved across the wafer. The contacts do not deteriorate appreciably after themal treatment at 410 °C for 57 h.
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73.40.Ns Metal-nonmetal contacts

Crosstalk measurements of monolithic GaAs photoconductive detector arrays in the GHz region

D. K. W. Lam and R. I. MacDonald

Appl. Phys. Lett. 46, 1143 (1985); http://dx.doi.org/10.1063/1.95737 (3 pages) | Cited 3 times

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The crosstalk levels among detectors in a monolithic GaAs photoconductive detector array were measured in the frequency range 250 MHz–1.3 GHz. When the array was mounted on a properly designed microstripline circuit, crosstalk levels below −44 dB were achieved at a detector spacing of 100 μm across the entire 1.3‐GHz bandwidth. The provision of a ground plane fabricated monolithically with the array was found to be important. The observed −44 dB crosstalk level in the GHz frequency region confirms the feasibility of a completely integrated broadband optoelectronic switching matrix.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.De Semiconductor-device characterization, design, and modeling
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
72.70.+m Noise processes and phenomena

GaAs/Ga0.47In0.53As lattice‐mismatched Schottky barrier gates: Influence of misfit dislocations on reverse leakage currents

C. Y. Chen, S. N. G. Chu, and A. Y. Cho

Appl. Phys. Lett. 46, 1145 (1985); http://dx.doi.org/10.1063/1.95738 (3 pages) | Cited 10 times

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Epitaxial GaAs has been grown on Ga0.47In0.53As by molecular beam epitaxy to form a lattice‐mismatched Schottky barrier gate for field‐effect transistor applications. The study of cross‐sectional transmission electron microscopy shows that the misfit dislocations accommodating the 3.7% lattice mismatch between these two materials are confined in a GaAs interfacial layer of 300–400‐Å thickness. As a result of significant reduction in dislocation densities, Schottky barrier gates made on a sample having a 960‐Å‐thick GaAs layer exhibit reverse leakage currents two orders of magnitude lower than those made on a sample with a 580‐Å‐thick GaAs layer. This approach looks promising for fabricating Ga0.47In0.53As field‐effect transistors for optoelectronic integration as well as high‐speed logic applications.
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73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Tv Field effect devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high‐energy electron diffraction intensity dynamics study

A. Madhukar, T. C. Lee, M. Y. Yen, P. Chen, J. Y. Kim, S. V. Ghaisas, and P. G. Newman

Appl. Phys. Lett. 46, 1148 (1985); http://dx.doi.org/10.1063/1.95739 (3 pages) | Cited 50 times

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Measurements of the time‐dependent intensity in reflection high‐energy electron diffraction during [100] growth of AlxGa1−x As on GaAs (normal interface) and of GaAs on AlxGa1−x As (inverted interface) are reported for such growth on static, dynamic, and relaxing surfaces. It is shown that the growth kinetics imply that interruption of growth for an optimized duration after deposition of each alternating layer can result in structurally and chemically improved interfaces, including the possibility of comparably good normal and inverted interfaces, in heterojunctions, multiple quantum wells, and superlattices.
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68.55.-a Thin film structure and morphology
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

X‐ray photoelectron spectroscopy study of the effects of ultrapure water on GaAs

J. Massies and J. P. Contour

Appl. Phys. Lett. 46, 1150 (1985); http://dx.doi.org/10.1063/1.95740 (3 pages) | Cited 25 times

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X‐ray photoelectron spectroscopy has been used to investigate the effects of de‐ionized water on chemical etched GaAs surfaces. When the treatment with water is performed in static conditions (stagnant water) a Ga‐rich oxide layer is formed on GaAs at the rate of 10–20 Å h−1. In contrast, when the GaAs surface is treated in dynamic conditions (running water), no oxide buildup is observed. Moreover, running water can remove the oxide film formed in static conditions, as well as oxidized layers due to air exposure. These results are discussed in the framework of cleaning prior to molecular beam epitaxy.
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81.65.-b Surface treatments

Thermal profiles during recrystallization of silicon on insulator with scanning incoherent light line sources

Katsuhiko Kubota, Charles E. Hunt, and Jeffrey Frey

Appl. Phys. Lett. 46, 1153 (1985); http://dx.doi.org/10.1063/1.95741 (3 pages) | Cited 17 times

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The classical heat equation is solved in one and two dimensions to obtain temperature profiles during recrystallization of silicon thin films on insulators with scanning incoherent light sources. The extent of the Si molten region in multilayered structures is predicted using a macroscopic approach. The enthalpy method incorporates the latent heat of fusion into the temperature‐enthalpy relation for Si; the Kirchhoff transformation takes the temperature dependence of the thermal conductivities for the materials into account. The calculations yield the Si melt depths and temperatures and are intended to establish proper experimental conditions.
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44.30.+v Heat flow in porous media
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
64.70.D- Solid-liquid transitions
44.10.+i Heat conduction

First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well

L. C. West and S. J. Eglash

Appl. Phys. Lett. 46, 1156 (1985); http://dx.doi.org/10.1063/1.95742 (3 pages) | Cited 513 times

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A new type of optical transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction‐band electron wave function, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption for two structures with 65‐Å‐thick‐ and 82‐Å‐thick wells. The transitions exhibit resonant energies of 152 and 121 meV respectively, full width at half‐maximum linewidths as narrow as 10 meV at room temperature, and an oscillator strength of 12.2. The material is anticipated to have subpicosecond relaxation times and be ideal for low‐power optical digital logic.
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78.30.Hv Other nonmetallic inorganics
75.20.Ck Nonmetals
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Temperature dependence of hole mobility in GaAs‐Ga1−xAlxAs heterojunctions

E. E. Mendez and W. I. Wang

Appl. Phys. Lett. 46, 1159 (1985); http://dx.doi.org/10.1063/1.95743 (3 pages) | Cited 18 times

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The mobility and carrier density of two‐dimensional hole systems formed at the interface of GaAs‐Ga1−xAlxAs heterojunctions have been measured in the temperature range 1.9–100 K. The mobility increased monotonically with decreasing temperature, and in one sample reached 2.35×105 cm2 V−1 s−1, the highest value reported for holes. Optical phonon scattering (for T>40 K) and acoustic phonon scattering (for 15 K≤T≤40 K) are the mechanisms limiting the mobility down to low temperature, where Coulomb scattering dominates (for T<15 K). An observed linear increase of the inverse mobility with temperature cannot be explained quantitatively with a theory that was able to account for a similar behavior found in two‐dimensional electrons.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Fr Low-field transport and mobility; piezoresistance
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Photoluminescence from In0.53Ga0.47As/InP quantum wells grown by molecular beam epitaxy

J. H. Marsh, J. S. Roberts, and P. A. Claxton

Appl. Phys. Lett. 46, 1161 (1985); http://dx.doi.org/10.1063/1.95744 (3 pages) | Cited 29 times

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Room‐temperature and low‐temperature photoluminescence from quantum well In0.53Ga0.47As/InP structures grown by molecular beam epitaxy is reported for the first time. A range of well thicknesses from 240 down to 10 Å was studied. Emission as short as 1.16 μm (1.07 eV) at 3.8 K and 1.22 μm (1.02 eV) at 300 K was observed from a well ∼10 Å, and the overall luminescence efficiency of the structure was ∼50 times greater than that of a quaternary sample of similar carrier concentration grown by liquid phase epitaxy. The full width half‐maximum of the photoluminescence peak from a 20‐Å well was 11.6 meV at 3.8 K. These results indicate the cladding InP as well as the interfaces are of very high quality.
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78.40.Fy Semiconductors
68.55.-a Thin film structure and morphology

High‐speed junction‐depleted Ga0.47In0.53As photoconductive detectors

C. Y. Chen, A. G. Dentai, B. L. Kasper, and P. A. Garbinski

Appl. Phys. Lett. 46, 1164 (1985); http://dx.doi.org/10.1063/1.95745 (3 pages) | Cited 2 times

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A high‐speed junction‐depleted Ga0.47In0.53As photoconductive detector without making use of radiation damage to the sample is reported. The detector has a light absorbing region in the n−layer of an unbiased p‐n junction. As a result of the built‐in field associated with the p‐n junction, the carriers generated far from the surface were removed, leading to a picosecond response time. When tested by 100‐ps, 1.55‐μm light pulses, the detector showed a fall time of 90 ps with an external gain >1.3 (no antireflection coating). Receiver sensitivity at 1 Gb/s was −25.3 dBm at 1.55 μm and an error rate of 10−9.
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85.60.Gz Photodetectors (including infrared and CCD detectors)

Ion‐assisted etching of silicon by SF6

D. J. Oostra, A. Haring, A. E. de Vries, F. H. M. Sanders, and K. Miyake

Appl. Phys. Lett. 46, 1166 (1985); http://dx.doi.org/10.1063/1.95746 (3 pages) | Cited 17 times

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Sputtering of silicon by 3‐keV Ar+ ions in the presence of a molecular SF6 beam has been investigated by mass spectrometry and time‐of‐flight measurements. At temperatures below 100 K chemical reactions are induced between the silicon and an adsorbed layer of SF6 under ion bombardment leading to newly formed molecular products. The main products formed are SiFx′ (x=0–4) and a small amount of SiSFy compounds (y=0–2). The kinetic energies of these molecular species are for the major part in the 0.1‐eV region which excludes evaporation at substrate temperature to be a dominant mechanism for erosion. An effective sputtering yield for silicon of approximately 15 is obtained.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Controlled low barrier height n+‐InGaAs/n‐GaAs pseudomorphic heterojunction Schottky diodes

A. W. Kleinsasser, J. M. Woodall, G. D. Pettit, T. N. Jackson, J. Y.‐F. Tang, and P. D. Kirchner

Appl. Phys. Lett. 46, 1168 (1985); http://dx.doi.org/10.1063/1.95747 (3 pages) | Cited 3 times

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Heterojunction Schottky barrier diodes, in which a pseudomorphic layer of n+‐InGaAs played the role of a metal contacting n‐GaAs, were grown by molecular beam epitaxy. The junctions had low barrier heights (30–150 meV) which could be controlled by composition and doping of the n+ layer. I‐V measurements of the devices confirmed that the devices behaved as Schottky diodes, in accordance with the theory of tunneling and thermally assisted tunneling in the temperature range 4–200 K. An exponential increase in conductance with decreasing In concentration indicates a decrease in barrier height which is at least qualitatively consistent with simulations of the barriers based on earlier experiments, which showed that the band‐gap discontinuity appears predominately in the conduction band.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
85.30.Hi Surface barrier, boundary, and point contact devices

Measurement and reduction of interface states at the recrystallized silicon‐underlying insulator interface

James C. Sturm, James D. Plummer, and James F. Gibbons

Appl. Phys. Lett. 46, 1171 (1985); http://dx.doi.org/10.1063/1.95748 (3 pages) | Cited 8 times

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Deep level transient spectroscopy and capacitance‐voltage measurements have been performed on an inverted metal‐oxide‐semiconductor (MOS) capacitor structure to measure the interface state density at the recrystallized silicon‐underlying insulator interface. The effects of different recrystallization caps, annealing steps, and different underlying oxides have been investigated. An interface state density in the mid 1010 cm−2 eV−1 range can be consistently obtained, enabling well‐behaved MOS transistor channels on the bottom of the recrystallized films.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Photoluminescence in PbTe‐PbEuTeSe multiquantum wells

W. Goltsos, J. Nakahara, A. V. Nurmikko, and D. L. Partin

Appl. Phys. Lett. 46, 1173 (1985); http://dx.doi.org/10.1063/1.95922 (3 pages) | Cited 15 times

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Infrared photoluminescence has been studied in a thin (92 Å) PbTe‐PbEuTeSe multiquantum well structure. The spectra show good agreement with calculations for the n=1 quantum well transition for a simple two‐dimensional electron‐hole gas with low‐energy broadening consistent with monolayer well width fluctuations. From the measured effective electron temperatures we estimate that the electron‐longitudinal optical phonon interaction is significantly reduced in comparison with bulk PbTe.
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78.40.Fy Semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.38.-k Polarons and electron-phonon interactions
75.20.Ck Nonmetals

Electrical study of Schottky barrier heights on atomically clean and air‐exposed n‐InP(110) surfaces

N. Newman, T. Kendelewicz, L. Bowman, and W. E. Spicer

Appl. Phys. Lett. 46, 1176 (1985); http://dx.doi.org/10.1063/1.95749 (3 pages) | Cited 48 times

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We report here a systematic study of the electronic properties of Schottky barrier diodes fabricated on atomically clean, as well as air‐exposed n‐InP (110) surfaces. Using the current‐voltage (I‐V) measuring technique, we found the barrier heights of 0.33 eV for Ni, Al, Sn, Mn, 0.43 eV for Pd, Cu, Au, Cr, and 0.54 eV for Ag. Contrary to earlier reports based on a limited amount of data, the results of this study do not show a simple relationship between the chemical reactivity and the Schottky barrier height. The large differences between the electrical characteristics of diodes prepared on clean surfaces and those prepared on air‐exposed surfaces were also not found.
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73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Ns Metal-nonmetal contacts
73.40.Ei Rectification

High quality Nb/Al‐AlOx/Nb Josephson junction

Shin’ichi Morohashi, Fujitoshi Shinoki, Akira Shoji, Masahiro Aoyagi, and Hisao Hayakawa

Appl. Phys. Lett. 46, 1179 (1985); http://dx.doi.org/10.1063/1.95696 (3 pages) | Cited 35 times

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We have improved the quality of Nb/Al‐AlOx/Nb Josephson junctions and obtained the most excellent junction characteristics ever obtained for all refractory Josephson junctions. The Vm values (the product of the critical current and the subgap resistance measured at 2 mV) are 88 mV at the critical current density Ij =500 A/cm2 and 72 mV at Ij =1000 A/cm2. The Vm values are larger than 40 mV up to Ij of 2400 A/cm2. The high Vm values are important to obtain the low subgap leakage current and not to reduce the transfer current to the load in Josephson circuit. These characteristics have been achieved by improving the quality of the Nb film and optimizing the Al thickness. We have also confirmed that Ij can be controlled by both the oxidation pressure and time in the range of 40–4600 A/cm2.
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85.25.-j Superconducting devices
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