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1 Jan 1985

Volume 46, Issue 1, pp. 1-102

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Elimination of cross talk in optical directional couplers

H. A. Haus and N. A. Whitaker

Appl. Phys. Lett. 46, 1 (1985); http://dx.doi.org/10.1063/1.95910 (3 pages) | Cited 24 times

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Waveguide directional couplers may suffer from incomplete isolation between channels due to unequal excitation of symmetric and antisymmetric coupler modes. This letter shows that tapering may be used to eliminate cross talk while maintaining negligible radiation and reflection loss.
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42.79.Gn Optical waveguides and couplers

Frequency modulation noise and linewidth reduction in a semiconductor laser by means of a negative frequency feedback technique

S. Saito, O. Nilsson, and Y. Yamamoto

Appl. Phys. Lett. 46, 3 (1985); http://dx.doi.org/10.1063/1.95843 (3 pages) | Cited 16 times

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Electrical negative frequency feedback control has been shown to reduce frequency modulation (FM) noise linewidth in semiconductor lasers. The method is based on the direct frequency modulation capability of a semiconductor laser. An error signal is extracted through optical heterodyne frequency discrimination detection using a stable master laser. FM noise is reduced by more than 20 dB and linewidth is reduced by one order of magnitude.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Etched‐groove coupled‐cavity vapor‐phase‐transported window lasers at 1.55 μm

L. A. Coldren, T. L. Koch, T. J. Bridges, E. G. Burkhardt, B. I. Miller, and J. A. Rentschler

Appl. Phys. Lett. 46, 5 (1985); http://dx.doi.org/10.1063/1.95852 (3 pages) | Cited 2 times

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The fabrication and characterization of a new two‐section etched‐groove laser that uses vapor phase regrowth are given. A single undoped InP regrowth forms the buried heterostructure laser sidewalls and facilitates the formation of high‐quality single‐material etched‐mirror facets. Low threshold (∼30 mA), tunable single‐wavelength operation results at 1.55 μm.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
68.55.-a Thin film structure and morphology
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

626.2‐nm pulsed operation (300 K) of an AlGaInP double heterostructure laser grown by metalorganic chemical vapor deposition

Kenichi Kobayashi, Isao Hino, and Tohru Suzuki

Appl. Phys. Lett. 46, 7 (1985); http://dx.doi.org/10.1063/1.95804 (3 pages) | Cited 8 times

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Room‐temperature pulsed laser operation of (Al0.55Ga0.45)0.5In0.5P /(Al0.17Ga0.83)0.5In0.5P / (Al0.55Ga0.45)0.5In0.5P double heterostructure laser diodes grown by metalorganic chemical vapor deposition has been achieved. The lasing wavelength is 626.2 nm, which is the shortest ever reported for an AlGaInP double heterostructure laser. Threshold current density is 50 kA/cm2 for a diode with a 20‐μm‐wide and 200‐μm‐long stripe.
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42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.45.+h Stimulated emission

Laser frequency stabilization by a polarization‐sensitive optical system using a reflecting reference cavity

Sung Do Cha and Sang Soo Lee

Appl. Phys. Lett. 46, 9 (1985); http://dx.doi.org/10.1063/1.95812 (3 pages) | Cited 2 times

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A simple polarization‐sensitive optical system with no polarizing element inside a reference cavity is developed for locking the laser frequency to a high finesse reference cavity. The dispersion‐shaped error signal suitable for the laser frequency stabilization is obtained experimentally by analyzing the change in the polarization of the output obtained by superposing two orthogonal, linearly polarized beams which are the reference beam and the beam reflected off a high finesse reference cavity.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.15.Eq Optical system design
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Fine structure of frequency chirping and FM sideband generation in single‐longitudinal‐mode semiconductor lasers under 10‐GHz direct intensity modulation

Chinlon Lin, G. Eisenstein, C. A. Burrus, and R. S. Tucker

Appl. Phys. Lett. 46, 12 (1985); http://dx.doi.org/10.1063/1.95832 (3 pages) | Cited 4 times

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The fine structure of the dynamically broadened spectral line of a single‐longitudinal‐mode InGaAsP laser under large‐signal direct intensity modulation at 10 GHz was studied. It is shown that the frequency‐chirped spectral line has a characteristic FM modulation spectrum with many sidebands at 10‐GHz intervals and with an asymmetry due to the superposition of the a.m. modulation.
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42.60.Fc Modulation, tuning, and mode locking

Vacuum ultraviolet laser emission from Nd+3:LaF3

Ronald W. Waynant and Philipp H. Klein

Appl. Phys. Lett. 46, 14 (1985); http://dx.doi.org/10.1063/1.95833 (3 pages) | Cited 37 times

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Laser emission at 172 nm has been produced by pumping a Nd:LaF3 crystal with incoherent Kr@B|2 radiation at 146 nm. The 5‐ns pulse contained approximately 20–30 μJ of energy. Fluorescence measurements indicate potential for tuning from 170–175 nm, which should be observable with OH−‐free crystals.
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42.55.Rz Doped-insulator lasers and other solid state lasers
78.45.+h Stimulated emission
33.20.Ni Vacuum ultraviolet spectra
33.80.Be Level crossing and optical pumping

Polarization bistability in semiconductor lasers

Y. C. Chen and J. M. Liu

Appl. Phys. Lett. 46, 16 (1985); http://dx.doi.org/10.1063/1.95834 (3 pages) | Cited 35 times

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A new kind of optical bistability, the polarization bistability, is observed in InGaAsP/InP lasers operating near the polarization transition temperature. This bistability is characterized by large hysteresis loops in the polarization‐resolved power versus current characteristics. Fast switching between the two stable polarization states by injection of current pulses is also demonstrated.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.-k Nonlinear optics

Fabrication and performance characteristics of InGaAsP multiquantum well double channel planar buried heterostructure lasers

N. K. Dutta, S. G. Napholtz, R. Yen, R. L. Brown, T. M. Shen, N. A. Olsson, and D. C. Craft

Appl. Phys. Lett. 46, 19 (1985); http://dx.doi.org/10.1063/1.95835 (3 pages) | Cited 8 times

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We report the fabrication and performance characteristics of InGaAsP double channel planar buried heterostructure (DCPBH) lasers with multiquantum well active layers emitting at 1.3 μm. These lasers have threshold currents in the range 40–50 mA at 30 °C, external differential quantum efficiencies of ∼50% at 30 °C, and T0 values ∼160–180 K in the temperature range 10–60 °C. Under optical pumping the measured T0 are in the range 100–150 K. The lasers operate in a single transverse mode up to high powers (>10 mW/facet), can be modulated at ∼2 Gb/s, and exhibit less frequency chirping than similar lasers with conventional active layers. The observed high T0 and smaller chirp make DCPBH multiquantum well lasers potentially attractive for system applications.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Optically pumped NO (A 2Σ+→X 2π) ultraviolet laser

Michael D. Burrows, Steven L. Baughcum, and Richard C. Oldenborg

Appl. Phys. Lett. 46, 22 (1985); http://dx.doi.org/10.1063/1.95836 (3 pages) | Cited 14 times

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Lasing action on the (0,1) and (0,2) γ bands of NO at 237 and 248 nm, respectively, has been obtained by longitudinal pumping of 0.5 Torr of NO on the (0,0) γ‐band transition at 227 nm. Typical output pulse energies were 13 μJ at an intrinsic energy conversion efficiency of approximately 15%.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
33.80.Be Level crossing and optical pumping
78.60.Ps Chemiluminescence

Acoustic Lamb wave‐electric field nonlinear interaction in YZ LiNbO3 plates

A. Palma, L. Palmieri, G. Socino, and E. Verona

Appl. Phys. Lett. 46, 25 (1985); http://dx.doi.org/10.1063/1.95837 (3 pages) | Cited 6 times

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The nonlinear electroacoustic effect has been investigated for acoustic Lamb wave propagation in a YZ LiNbO3 plate under a uniform bias electric field. A theoretical model is briefly outlined, which shows how the effect can be interpreted in terms of second and third order material constants. The strength of the nonlinear interaction has been experimentally evaluated through measurements of the change in phase velocity of Lamb modes produced by the bias field. The experiments were performed in the frequency range 8–33 MHz on most of the Lamb modes excited in a 1.25‐mm‐thick plate by an interdigital transducer with a periodicity λ=0.396 mm. The results evidence a strong dependence of the nonlinear effect on the order and symmetry of the analyzed modes.
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43.35.Pt Surface waves in solids and liquids
43.25.Ba Parameters of nonlinearity of the medium
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
72.50.+b Acoustoelectric effects
73.50.Rb Acoustoelectric and magnetoacoustic effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants

X‐ray emission from KrF laser‐produced Al plasmas

Y. Matsumoto, M. J. Shaw, F. O’Neill, J. P. Partanen, M. H. Key, R. Eason, I. N. Ross, E. M. Hodgson, and Y. Sakagami

Appl. Phys. Lett. 46, 28 (1985); http://dx.doi.org/10.1063/1.95838 (3 pages) | Cited 10 times

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A high power (200 J, 50 ns) 249‐nm KrF laser has been focused onto solid Al targets in vacuum at a peak irradiance of 3×1013 W cm−2. High‐temperature (>200 eV) plasmas are produced and x‐ray measurements show intense emission of the resonance spectra of Al XII and Al XIII in the wavelength range 0.6–0.8 nm. Absolute x‐ray intensity measurements indicate a maximum source brightness of 1.1×1017 erg cm−2 s−1 sterad−1 in Δν/ν=10−3 (Al XII, 1 1S0–2 1P1, 0.776 nm) and a conversion efficiency from laser power to x‐ray power of 0.2% for 1.5 keV<hν<2.5 keV.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
32.30.Rj X-ray spectra

Mechanism of oxygen plasma etching of polydimethyl siloxane films

N. J. Chou, C. H. Tang, J. Paraszczak, and E. Babich

Appl. Phys. Lett. 46, 31 (1985); http://dx.doi.org/10.1063/1.95839 (3 pages) | Cited 21 times

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We have used x‐ray photoelectron spectroscopy and multiple internal reflection infrared spectroscopy to study the etching of polysiloxane films in an rf oxygen plasma. The results indicate that a structurally strained SiO2 layer, ∼1 nm thick, is formed on the film exposed to oxygen plasma. For a given rf power input this oxidized overlayer recedes with the etching front in a steady state fashion, acting as a protective layer for the underlying polysiloxane film. The etching mechanism is effectively a combination of two competitive processes, namely, ion sputtering and oxidation.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
85.40.Bh Computer-aided design of microcircuits; layout and modeling
52.40.Hf Plasma-material interactions; boundary layer effects

Proposed model for stress relaxation at low temperatures

S. M. Raza, S. B. H. Abidi, and N. Farooqui

Appl. Phys. Lett. 46, 34 (1985); http://dx.doi.org/10.1063/1.95840 (2 pages) | Cited 1 time

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A model for stress relaxation is outlined in which the movement of dislocations over a volume dispersion of obstacles requires dislocation/dislocation interactions. The relation for the creep rate is modified for low temperatures which suggests that the behavior of stress relaxation rate is ‘‘athermal’’ and logarithmic in character.
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81.40.Lm Deformation, plasticity, and creep
62.20.Hg Creep
46.35.+z Viscoelasticity, plasticity, viscoplasticity
61.72.Lk Linear defects: dislocations, disclinations

Diode structures formed by rapid thermal annealing of boron implanted silicon

M. E. Lunnon, J. T. Chen, and J. E. Baker

Appl. Phys. Lett. 46, 35 (1985); http://dx.doi.org/10.1063/1.95841 (3 pages) | Cited 3 times

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Rapid annealing of boron implanted (100) silicon has been used to fabricate p+‐n diodes. After an implant dose of 3×1015 ion cm−2 and a 1‐s anneal at 1100 °C, a sheet resistance of 40 Ω/☒ is obtained. The junction depth is 0.34 μm, measured by spreading resistance profiling. The leakage current at −5 V is 40 nA cm−2. Secondary ion mass spectrometry shows that the boron dopant diffuses rapidly (≂50 nm) during the first second of an anneal at 1100 °C. The residual implantation damage does not appear to have a deleterious effect on diode characteristics.
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66.30.J- Diffusion of impurities
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
85.30.Kk Junction diodes
61.72.U- Doping and impurity implantation

Annealing characteristics of Si‐rich SiO2 films

L. A. Nesbit

Appl. Phys. Lett. 46, 38 (1985); http://dx.doi.org/10.1063/1.95842 (3 pages) | Cited 100 times

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Silicon‐rich SiO2 films of various compositions were deposited by atmospheric or plasma‐enhanced chemical vapor deposition (CVD) techniques. These films were annealed at various temperatures between 700 and 1100 °C. The growth and crystallinity of the silicon clusters were monitored by transmission electron microscopy. The growth of the silicon clusters was found to be diffusion controlled with an activation energy measured to a first approximation at 1.9 eV/atom for both atmospheric and plasma‐enhanced CVD films. A minimum annealing temperature of between 800 and 950 °C and a minimum amount of excess Si above SiO2 are required to form crystalline silicon particles in the films. The minimum silicon crystal diameter was measured at 2.5 nm.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
66.30.J- Diffusion of impurities
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
66.30.Ny Chemical interdiffusion; diffusion barriers

Titanium silicide formation on BF+2‐implanted silicon

T. P. Chow, W. Katz, and G. Smith

Appl. Phys. Lett. 46, 41 (1985); http://dx.doi.org/10.1063/1.95844 (3 pages) | Cited 20 times

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Thin‐film interaction between titanium and BF+2 ‐implanted silicon substrates at 650–900 °C was investigated. At 650 °C, the incomplete Ti/Si reaction led to formation of a surface layer (∼600 Å thick) of titanium‐rich silicide (Si/Ti ∼1.6) on top of a near‐stoichiometric silicide layer. Annealing at 700 °C or higher resulted in conversion of the titanium film into predominantly TiSi2 and a lower sheet resistance. After annealing, boron was found to redistribute into the silicide layer and fluorine was segregated onto the silicide/silicon interface, but neither species apparently affected the overall sheet resistance for BF+2 dosages up to 6×1015 cm−2. A sheet resistance of ∼0.7 Ω/☒ was obtained after annealing between 700 and 900 °C for 30 min.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
68.55.-a Thin film structure and morphology
66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation

Plasma enhanced chemical vapor deposition of titanium diboride films

L. M. Williams

Appl. Phys. Lett. 46, 43 (1985); http://dx.doi.org/10.1063/1.95845 (3 pages) | Cited 16 times

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Thin films of titanium borides were deposited at temperatures from 480 to 650 °C using a glow discharge and feed gases of TiCl4, BCl3, and H2. High quality films have been obtained that are smooth, shiny, and crack‐free; they have as‐deposited resistivities as low as 200 μΩ cm. Films deposited with these moderate conditions have comparable properties to films deposited at high temperatures. These films have potential use as diffusion barriers or in other applications requiring a conducting refractory material.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.At Metal and metallic alloys
52.80.Pi High-frequency and RF discharges
52.80.Hc Glow; corona

Two‐dimensional electron gases in quantum well and superlattices of Ga0.25In0.75As0.50P0.50/InP heterostructures grown by low pressure metalorganic chemical vapor deposition

M. Razeghi, J. P. Duchemin, and J. C. Portal

Appl. Phys. Lett. 46, 46 (1985); http://dx.doi.org/10.1063/1.95846 (3 pages) | Cited 11 times

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We report the first observation of a two‐dimensional electron gas from Shubnikov–de Haas experiments, in a Ga0.25In0.75As0.50P0.50‐InP heterojunction, multi‐quantum well, and superlattices grown by metalorganic chemical vapor deposition at reduced pressure.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Observation of the trend of interface formation in anodic native oxide on InSb by marker experiments

Yoram Shapira, J. Bregman, and Z. Calahorra

Appl. Phys. Lett. 46, 48 (1985); http://dx.doi.org/10.1063/1.95847 (3 pages) | Cited 12 times

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We have investigated the trend of anodization of InSb by predeposition of a very thin Cr layer, acting as a marker. Results of Auger electron spectroscopy show that the oxidation process is carried out by oxygen in diffusion through the oxide film. The details and implications of this observation are discussed.
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81.65.-b Surface treatments
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Determination of interfacial quality of GaAs‐GaAlAs multi‐quantum well structures using photoluminescence spectroscopy

D. C. Reynolds, K. K. Bajaj, C. W. Litton, P. W. Yu, Jasprit Singh, W. T. Masselink, R. Fischer, and H. Morkoç

Appl. Phys. Lett. 46, 51 (1985); http://dx.doi.org/10.1063/1.95848 (3 pages) | Cited 39 times

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Well size fluctuations have been observed in high quality GaAs‐Ga0.75Al0.25As multi‐quantum well structures having very sharp photoluminescence transitions. The effect of well size fluctuations appears as multiple peaks in both the heavy hole free exciton and the heavy hole donor bound exciton transitions. The observed energy separation of the peaks corresponds to what would be expected for a change in well thickness of 1/2 monolayer. The observed linewidths and the well size fluctuations suggest that these are interlayer rather than intralayer fluctuations. These results are different from earlier reported work. The very narrow emission lines reflect the excellent structural quality of the layers. A model to explain the effective half‐monolayer well size fluctuations is proposed.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.40.Fy Semiconductors
71.35.-y Excitons and related phenomena

Dislocation energies and hardness of semiconductors

A. Sher, A.‐B. Chen, and W. E. Spicer

Appl. Phys. Lett. 46, 54 (1985); http://dx.doi.org/10.1063/1.95849 (3 pages) | Cited 14 times

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The dislocation energies and hardness of semiconductors are calculated by an extension of Harrison’s method. It is demonstrated in agreement with experiment that dislocation energies per unit length are proportional to d−3– d−9, where d is the bond length and hardness is proportional to d−5– d−11. The hardness is related to the interaction energies among dislocations. It is argued that dislocation densities of semiconductors will be reduced if they are alloyed with a second constituent that has a shorter bond length. Experimental evidence supporting this strategy is noted.
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61.72.Lk Linear defects: dislocations, disclinations
62.20.-x Mechanical properties of solids
46.55.+d Tribology and mechanical contacts
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Effect of oxygen in atmosphere on 〈100〉 texture of laser‐recrystallized silicon on fused quartz

Masakazu Kimura, Koji Egami, and Masura Kanamori

Appl. Phys. Lett. 46, 57 (1985); http://dx.doi.org/10.1063/1.95850 (3 pages) | Cited 2 times

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Effect of oxygen in an atmosphere on 〈100〉 texture formed by laser melting has been quantitatively examined using x‐ray diffraction method. It has been found that oxygen content over several percentage is necessary to be included in an atmosphere during recrystallization for preventing the agglomeration of silicon and achieving strong 〈100〉 texture, but that capping with an SiO2 layer does not induce such strong 〈100〉 texture as that produced with air and no capping. An oxide layer seems not to be necessarily important for strong 〈100〉 texture formation.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena
61.66.Bi Elemental solids

Mercury zinc telluride, a new narrow‐gap semiconductor

Ariel Sher, D. Eger, and A. Zemel

Appl. Phys. Lett. 46, 59 (1985); http://dx.doi.org/10.1063/1.95851 (3 pages) | Cited 7 times

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For the first time the growth of single crystal solid solutions of Hg1−xZnxTe is demonstrated. Layers with compositions of x=0.16 and 0.23 having transmission cut‐on wavelengths of 9.1 and 4.1 μm at 80 K, respectively, were grown by liquid phase epitaxy on CdTe substrates. The optical and electrical characteristics of the epilayers are similar to those obtained for Hg1−xCdxTe alloys.
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68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
75.20.Ck Nonmetals
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Highly photoconductive and photosensitive hydrogenated amorphous silicon carbon alloy films prepared by magnetron sputtering

Nobuo Saito

Appl. Phys. Lett. 46, 61 (1985); http://dx.doi.org/10.1063/1.95853 (3 pages) | Cited 10 times

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Undoped hydrogenated amorphous silicon carbon alloy thin films were prepared by the magnetron sputtering of silicon in a gas mixture of methane argon. It is found that the photoconductivities of the films with carbon concentration above 15% are one order of magnitude or more larger than the films prepared by the glow discharge decomposition of silane‐methane gas mixture reported by other groups before now. Moreover, the photosensitivities of these films are larger than those of the glow discharge films, as a result of small dark conductivities of the former compared with those of the latter.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.40.+w Photoconduction and photovoltaic effects
68.60.-p Physical properties of thin films, nonelectronic
81.15.Cd Deposition by sputtering
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