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15 May 1985

Volume 46, Issue 10, pp. 909-1008

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Origin of phase conjugate waves in self‐pumped photorefractive mirrors

Juan F. Lam

Appl. Phys. Lett. 46, 909 (1985); http://dx.doi.org/10.1063/1.95816 (3 pages) | Cited 25 times

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We show that stimulated two‐wave mixing is the origin of phase conjugate fields in self‐pumped photorefractive mirrors. We predict that the bulk photovoltaic effect gives rise to an intensity‐dependent frequency shift in the phase conjugate field and is the physical origin for the occurrence of beam fanning.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

KrF laser with longitudinal discharge excitation

H. J. Eichler, J. Hamisch, B. Nagel, and W. Schmid

Appl. Phys. Lett. 46, 911 (1985); http://dx.doi.org/10.1063/1.95817 (3 pages) | Cited 5 times

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Lasing in KrF was obtained with a longitudinal, self‐sustained, high‐voltage discharge. The output powers and energies at 248 nm have been measured for some tube geometries as a function of different He, Kr, and F2 partial pressures and mirror reflectivities. A maximum laser energy of 50 μJ has been obtained by discharging a capacitor of 360 pF and 60 kV across a segmented discharge tube with a total length of 70 cm and 6.5 mm inner diameter.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Calorimetric interferometry using pulsed Nd‐glass laser for measurement of small absorption coefficient at 1.06 μm

Jae Sun Yoon and Sang Soo Lee

Appl. Phys. Lett. 46, 913 (1985); http://dx.doi.org/10.1063/1.95818 (2 pages) | Cited 1 time

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A new calorimetric interferometry using a pulsed high power Nd‐glass laser was developed to determine small absorption coefficients of the order of 10−3 cm−1 or less at the wavelength of 1.06 μm. The absorption coefficients of the liquid specimens, C6H6, C6H5Cl, 0‐C6H4Cl2, and 1,2,4‐C6H3Cl3, were determined by the fast acquisition of an interferogram, accurate microcalorimetry, and the measurement of the laser beam radius.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
07.60.Ly Interferometers
07.20.Fw Calorimeters
42.25.Bs Wave propagation, transmission and absorption
42.55.Ks Chemical lasers

Enhanced quantum efficiency internal photoemission detectors by grating coupling to surface plasma waves

S. R. J. Brueck, V. Diadiuk, T. Jones, and W. Lenth

Appl. Phys. Lett. 46, 915 (1985); http://dx.doi.org/10.1063/1.95819 (3 pages) | Cited 35 times

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Enhanced quantum efficiencies have been obtained for Au‐InP internal photoemission detectors using grating coupling of incident radiation into surface plasma waves confined to the air‐metal interface. Enhancements of over a factor of 30 are observed at the resonance coupling angles. A model calculation of the surface plasma wave coupling is in good qualitative agreement with the experiment. Time‐resolved response measurements show that the present detectors are capacitance limited; picosecond response speeds are attainable with lower carrier concentration materials and smaller active areas.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
42.79.Dj Gratings
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

3‐pJ, 82‐MHz optical logic gates in a room‐temperature GaAs‐AlGaAs multiple‐quantum‐well étalon

J. L. Jewell, Y. H. Lee, M. Warren, H. M. Gibbs, N. Peyghambarian, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 46, 918 (1985); http://dx.doi.org/10.1063/1.95820 (3 pages) | Cited 50 times

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Various pulsed logic functions (nor, xor, etc.) are performed in a high‐finesse nonlinear Fabry–Perot étalon containing GaAs‐AlGaAs multiple quantum wells at room temperature. Input pulses with energies less than 3 pJ incident on the device produced contrasts greater than 5 : 1 in the nor gate, and relaxation times of about 5 ns allowed us to operate the gates at 82 MHz. Thermal stability was demonstrated in the nor gate even though the device was poorly heat sunk.
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07.60.Ly Interferometers
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Stop‐cleaved InGaAsP lasers for monolithic optoelectronic integration

A. Antreasyan, C. Y. Chen, and R. A. Logan

Appl. Phys. Lett. 46, 921 (1985); http://dx.doi.org/10.1063/1.95821 (3 pages) | Cited 3 times

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We report a novel technique for locally cleaving the mirrors of semiconductor lasers without cleaving the entire substrate. The stop‐cleaving technique involves the etching of holes on a substrate prior to the conventional cleaving procedure. The presence of the hole prevents the propagation of the cleavage plane along the entire substrate. The technique permits the fabrication of lasers with cleaved mirrors without imposing any limitation on the size of the substrate; thus, it is suitable for monolithic optoelectronic integration. InGaAsP lasers (λ=1.3 μm) with stop‐cleaved mirrors have been fabricated and have threshold currents comparable to those with conventionally cleaved mirrors.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Coherence and focusing properties of unstable resonator semiconductor lasers

M. Mittelstein, J. Salzman, T. Venkatesan, R. Lang, and A. Yariv

Appl. Phys. Lett. 46, 923 (1985); http://dx.doi.org/10.1063/1.95822 (3 pages) | Cited 6 times

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The emission characteristics of unstable resonator semiconductor lasers were measured. The output of an 80‐μm‐wide laser consists of a diverging beam with a virtual source 5 μm wide located 50 μm behind the laser facet. A high degree of spatial coherence of the laser output was measured, indicating single lateral mode operation for currents I≲3 Ith.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.25.Kb Coherence
42.15.Dp Wave fronts and ray tracing
42.55.Px Semiconductor lasers; laser diodes

Power enhancement for argon II narrow tube lasers by a transverse magnetic field

Shigeaki Kobayashi, Takeshi Kamiya, Toshiharu Hayashi, and Tatsumi Goto

Appl. Phys. Lett. 46, 925 (1985); http://dx.doi.org/10.1063/1.95925 (3 pages) | Cited 3 times

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Appreciable enhancement in output and power efficiency for compact Ar II lasers (488.0 nm) is obtained by applying a transverse magnetic flux density at approximately 700 G. The enhancement factor amounts to as large as 3 in laser output and the efficiency becomes more than twice as much as without magnetic flux. A sharp rise in output occurs above the critical magnetic flux density, 450 G in the present work, where the cyclotron radius of electrons is nearly equal to one‐half of the tube radius.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Gain and absorption measurements of electron beam pumped, high Kr concentration KrF gas mixtures

E. T. Salesky and Wayne D. Kimura

Appl. Phys. Lett. 46, 927 (1985); http://dx.doi.org/10.1063/1.95823 (3 pages) | Cited 9 times

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Gain and out‐of‐band absorption measurements are made of electron beam pumped KrF laser mixtures (Ar diluent) with 4–99.6% Kr concentrations. The average pump rate is maintained at ≊120 kW/cm3 by adjusting the total pressure of the mixtures to compensate for the different electron stopping powers of Ar and Kr. The F2 number density is also kept constant at 8.9×1016 cm−3. Measured small‐signal gains (g0−α) are 3.8%/cm at 4% Kr, 3.3%/cm at 50% Kr, and 3.2%/cm at 99.6% Kr. The out‐of‐band absorptions (261 nm) are 0.43%/cm at 4% Kr, 0.74%/cm at 50% Kr, and 0.87%/cm at 99.6% Kr. Our computer model agrees with the results and predicts in‐band absorptions (248 nm) of 0.29%/cm at 4% Kr, 0.44%/cm at 50% Kr, and 0.52%/cm at 99.6% Kr.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Temperature dependence of the threshold of GaInAsP/InP surface emitting junction lasers

Seiji Uchiyama and Kenichi Iga

Appl. Phys. Lett. 46, 930 (1985); http://dx.doi.org/10.1063/1.95824 (3 pages) | Cited 3 times

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A GaInAsP/InP surface emitting (SE) laser has been fabricated with a round mesa structure. The minimum threshold current was 35 mA (77 K) and the operating temperature was raised to −21 °C. The characteristic temperature T0 was 100–120 K near 100 K, but decreased at higher temperatures. This is believed to be caused by the generation of heat at the p‐side electrode. Room‐temperature operation of the GaInAsP/InP SE laser is expected upon solving the ohmic contact problem.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Domain inversion effects in Ti‐LiNbO3 integrated optical devices

S. Thaniyavarn, T. Findakly, D. Booher, and J. Moen

Appl. Phys. Lett. 46, 933 (1985); http://dx.doi.org/10.1063/1.95825 (3 pages) | Cited 35 times

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Significant degradation in the cumulative electro‐optic effect attributable to domain inversion has been observed in integrated optical devices fabricated by Ti diffusion in c+‐LiNbO3. The c− surface was found to be considerably more immune to domain inversion than the c+ surface under similar diffusion conditions. Domain inversion was found to be dependent on diffusion temperature, time, and Ti concentration. A large increase in the Vπ voltage was observed in Mach–Zehnder interferometers fabricated on c+ substrates compared to that of c− substrates under the same fabrication conditions. The effect of domain inversion on crosstalk in directional coupler switches is also discussed.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
78.20.Jq Electro-optical effects

Doppler shifted cyclotron maser radiation pumped by an asymmetric undulator

I. Shraga, C. Leibovitch, S. Eckhouse, Y. Goren, and A. Gover

Appl. Phys. Lett. 46, 936 (1985); http://dx.doi.org/10.1063/1.95826 (3 pages)

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Super‐radiant microwave emission pumped by the second harmonics of an asymmetric undulator has been investigated. Intense emission of TE mode electron cyclotron maser radiation was detected near the cyclotron resonance. It has been shown that an asymmetric undulator can be a suitable tool in producing high‐frequency intense microwave radiation without any change in its fundamental period.
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41.60.-m Radiation by moving charges
84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)
41.75.Fr Electron and positron beams
52.59.Px Hard X-ray sources

Optogalvanic study of excited H atoms in a dc glow discharge

Randy D. May

Appl. Phys. Lett. 46, 938 (1985); http://dx.doi.org/10.1063/1.95827 (3 pages) | Cited 5 times

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A cw dye laser operating at 6563 Å has been used to measure Doppler broadened absorption profiles of atomic hydrogen in a glow discharge using optogalvanic detection. In the cathode fall region, neutral hydrogen atoms were observed having kinetic energies >140 eV. In the negative glow and positive column average kinetic energies correspond more nearly to thermal velocities.
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32.70.Jz Line shapes, widths, and shifts
52.80.Hc Glow; corona
32.80.Xx Level crossing and optical pumping
52.80.Yr Discharges for spectral sources (including inductively coupled plasma)

Infrared absorption study on carbon and oxygen behavior in Czochralski silicon crystals

F. Shimura, J. P. Baiardo, and P. Fraundorf

Appl. Phys. Lett. 46, 941 (1985); http://dx.doi.org/10.1063/1.95828 (3 pages) | Cited 38 times

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The behavior of carbon atoms in relation to oxygen precipitation in Czochralski silicon crystals subjected to various heat treatments is investigated by means of infrared (IR) spectroscopy. It is shown that carbon atoms enhance and modify oxygen precipitation both at 750 and at 1000 °C. Perturbed [Oi−Ci] C(3) centers, which are unstable at a high temperature (1250 °C), have been observed in the specimen subjected to 750 °C heat treatment by IR spectroscopy. The enhancement effect of carbon atoms is explained in two ways: (i) C(3) centers act as effective heterogeneous seeding sites for oxygen precipitation, and (ii) carbon atoms play a catalytic role by modifying interfacial energies or the point defect ambient at the oxygen precipitate surface.
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81.40.Tv Optical and dielectric properties related to treatment conditions
78.30.Hv Other nonmetallic inorganics
81.40.Gh Other heat and thermomechanical treatments

Lateral extent of oxidation‐enhanced diffusion of phosphorus in 〈100〉 silicon

K. Taniguchi and D. A. Antoniadis

Appl. Phys. Lett. 46, 944 (1985); http://dx.doi.org/10.1063/1.95829 (3 pages) | Cited 15 times

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The lateral extent of oxidation‐enhanced diffusion (OED) of phosphorus in (100) silicon oxidized in dry oxygen has been investigated. OED was observed near the Si/SiO2 interface under an oxidation mask composed of Si3N4/SiO2. It was found that under the mask OED decays nearly exponentially from the edge of the oxidized region. The characteristic decay length increases with square root of oxidation time and is exponentially dependent on temperature with activation energy of 2 eV. It is proposed that the OED observations can be explained on the basis of excess silicon self‐interstitials diffusing away from the oxidized regions. Both diffusion and interface capture of self‐interstitials play a role in their distribution in the silicon bulk.
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66.30.J- Diffusion of impurities
81.65.-b Surface treatments
61.72.jd Vacancies
61.72.jj Interstitials

Use of a rapid anneal to improve CaF2:Si (100) epitaxy

Loren Pfeiffer, Julia M. Phillips, T. P. Smith, W. M. Augustyniak, and K. W. West

Appl. Phys. Lett. 46, 947 (1985); http://dx.doi.org/10.1063/1.95830 (3 pages) | Cited 35 times

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Post‐anneals of short duration at high temperature are shown to improve significantly the quality of CaF2 films on Si (100). An anneal at 1100 °C for 20 s in an Ar ambient reduced χmin, the ratio of backscattered 1.8‐MeV 4He+ ions in the aligned to random direction, from 0.26 for an as‐grown CaF2 film to 0.03 following the post‐anneal. This is the best χmin yet reported for the CaF2:Si (100) system. The post‐anneal films also show improved chemical, mechanical, and electrical properties.
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81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.55.-a Thin film structure and morphology

Evidence of chemical ordering in amorphous hydrogenated silicon carbide

J. Tafto and F. J. Kampas

Appl. Phys. Lett. 46, 949 (1985); http://dx.doi.org/10.1063/1.95777 (3 pages) | Cited 16 times

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Amorphous Si0.68C0.32@B:H prepared by radio frequency glow discharge from a mixture of methane and silane was studied by means of the complementary techniques of electron energy‐loss spectroscopy and electron diffraction. The experimental results are consistent with Si and C forming a tetrahedral network with nearest neighbor distances similar to those in crystalline Si and crystalline SiC. There is evidence that the C atoms tend to be surrounded by four Si atoms rather than a random distribution of C and Si on the tetrahedral network.
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81.05.Kf Glasses (including metallic glasses)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.55.-a Thin film structure and morphology

High quality silicon on insulator structures formed by the thermal redistribution of implanted nitrogen

P. L. F. Hemment, R. F. Peart, M. F. Yao, K. G. Stephens, R. J. Chater, J. A. Kilner, D. Meekison, G. R. Booker, and R. P. Arrowsmith

Appl. Phys. Lett. 46, 952 (1985); http://dx.doi.org/10.1063/1.95778 (3 pages) | Cited 29 times

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Silicon wafers have been implanted with 200‐keV 14N+ ions to doses between 0.25 and 1.4×1018 N+ cm−2 at a temperature of 500 °C and have been annealed at 1200 °C for 2 and 8 h. Rapid redistribution of the implanted nitrogen occurs, against the macroscopic concentration gradient, in samples implanted with doses below that required to directly synthesize stoichiometric Si3N4. This leads to the formation of a continuous buried layer of either amorphous or polycrystalline Si3N4. The surface layer is high quality single crystal silicon (χmin =0.043) containing no polycrystalline material nor precipitates. The Si‐Si3N4 interfaces are extremely abrupt but with an irregularity of ∼100 and ∼50 Å at the upper and lower interfaces, respectively.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Photoluminescence of organometallic vapor phase epitaxial GaInAs

K. L. Fry, C. P. Kuo, R. M. Cohen, and G. B. Stringfellow

Appl. Phys. Lett. 46, 955 (1985); http://dx.doi.org/10.1063/1.95779 (3 pages) | Cited 11 times

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The low‐temperature photoluminescence (PL) characteristics of undoped organometallic vapor phase epitaxial GaInAs lattice matched to InP have been studied and related to different growth conditions. By varying the excitation intensity, PL transitions due to excitons and donor‐acceptor pairs have been identified. Analysis of the two donor‐acceptor pair peaks yields acceptor activation energies of 13 and 24 meV, which are attributed to C and Zn, respectively. Carbon incorporation is seen to decrease markedly, accompanied by a substantial increase in mobility (10 000 and 40 000 cm2/Vs at 300 and 77 K, respectively) when the growth temperature is increased to 650 °C and the V/III ratio is kept above ∼30. The importance of accounting for lattice mismatch in interpreting PL half‐widths is evidenced by the doubling of the 77‐K PL half‐width for a lattice mismatch of only ∼10−3.
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78.40.Fy Semiconductors
81.10.Bk Growth from vapor
68.55.-a Thin film structure and morphology

Growth characteristics of oxide precipitates in heavily doped silicon crystals

Satoru Matsumoto, Ichiro Ishihara, Hiroyuki Kaneko, Hirofumi Harada, and Takao Abe

Appl. Phys. Lett. 46, 957 (1985); http://dx.doi.org/10.1063/1.95780 (3 pages) | Cited 8 times

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The doping concentration dependence on the growth of oxide precipitates has been studied using transmission electron microscopy in phosphorus and boron‐doped silicon crystals. Samples were annealed at 800 and 850 °C for 24–384 h in dry nitrogen. In phosphorus‐doped silicon, the precipitate density is not affected by the doping concentration, and the growth of precipitates is controlled by the diffusion of oxygen. On the other hand, the precipitate growth is suppressed in heavily boron‐doped silicon as compared with that of lightly boron‐doped silicon.
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81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
61.72.U- Doping and impurity implantation
61.72.jd Vacancies
61.72.jj Interstitials
81.30.Mh Solid-phase precipitation

Control of Be diffusion in molecular beam epitaxy GaAs

Jeffrey N. Miller, Douglas M. Collins, and Nicolas J. Moll

Appl. Phys. Lett. 46, 960 (1985); http://dx.doi.org/10.1063/1.95781 (3 pages) | Cited 31 times

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After molecular beam epitaxy GaAs is grown at 585 °C, substantial diffusion of Be occurs during growth of subsequent layers or during subsequent in situ annealing at 700 °C. By using an order of magnitude larger As4 flux than commonly used during growth and annealing, we were able to lower the Be diffusion coefficient by an order of magnitude. We also show that the Be diffusion coefficient is strongly dependent on the Be concentration. Different specimens were prepared with varying Be doping density, As4:Ga beam flux ratio, and annealing temperature. In these experiments, the Be concentration profiles were measured by secondary ion mass spectrometry and from them Be diffusion coefficients were calculated.
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66.30.J- Diffusion of impurities
68.55.-a Thin film structure and morphology
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Photoluminescence in CdTe grown on GaAs by metalorganic chemical vapor deposition

C. H. Wang, K. Y. Cheng, and S. J. Yang

Appl. Phys. Lett. 46, 962 (1985); http://dx.doi.org/10.1063/1.95923 (3 pages) | Cited 25 times

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Epitaxial layers of CdTe grown on (100) GaAs substrates by metalorganic chemical vapor deposition at temperatures between 320 and 410 °C were investigated by photoluminescent measurements at 14 K. The sharp bound exciton‐related peak at 1.594 eV, the band‐edge emission located near 1.557 eV, and the weak defect‐related extrinsic band at 1.476 eV, with their well‐resolved longitudinal optical phonon replicas were the observed major photoluminescence peaks. The variations of these peak intensities are a strong function of the epilayer growth temperatures. The intensity ratio of the defect‐related emission peak to the bound exciton peak decreases to less than 1/10 as the growth temperature is adjusted within 360 and 390 °C. For the CdTe epitaxial layer grown at 375 °C, the peak related to defects is completely eliminated.
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78.40.Fy Semiconductors
68.55.-a Thin film structure and morphology

Enhancement of intensity‐dependent absorption in InP and GaAs at 1.9 μm by doping

Nien‐Lou Li, Michael Bass, and Randall Swimm

Appl. Phys. Lett. 46, 964 (1985); http://dx.doi.org/10.1063/1.95782 (3 pages) | Cited 1 time

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Dopants giving rise to deep level states in InP and GaAs were found to significantly enhance the process of intensity‐dependent absorption at 1.9 μm. Such dopants also beneficially alter the laser damage threshold of the host materials.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.72.U- Doping and impurity implantation

Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices

I. J. Fritz, S. T. Picraux, L. R. Dawson, T. J. Drummond, W. D. Laidig, and N. G. Anderson

Appl. Phys. Lett. 46, 967 (1985); http://dx.doi.org/10.1063/1.95783 (3 pages) | Cited 124 times

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Various InxGa1−xAs/GaAs strained‐layer superlattices have been characterized by Hall effect, ion beam channeling, and photoluminescence measurements in order to evaluate their crystalline quality. Structural characteristics (e.g., layer strains and thicknesses) were obtained from channeling or x‐ray diffraction studies. The structures had strains in the alloy layers of 0.5–2.7%. Critical layer thicknesses for degradation of sample quality are in good agreement with the theoretical expression proposed by J. W. Matthews and A. E. Blakeslee [J. Cryst. Growth 27, 118 (1974)]. Our results provide important information for design of strained‐layer devices.
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68.55.-a Thin film structure and morphology
68.60.-p Physical properties of thin films, nonelectronic
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.40.Fy Semiconductors

Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation‐doped heterojunctions

O. J. Glembocki, B. V. Shanabrook, N. Bottka, W. T. Beard, and J. Comas

Appl. Phys. Lett. 46, 970 (1985); http://dx.doi.org/10.1063/1.95784 (3 pages) | Cited 138 times

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The optical modulation technique of photoreflectance (PR) has been applied to characterize the interband transitions in GaAs/AlGaAs multiple quantum wells (MQW) and modulation‐doped heterojunctions at room temperature. The spectra of the MQW show ‘‘derivativelike’’ reflectance features due to allowed interband transitions from heavy and light hole subbands to conduction subbands, and the E0(Γ8,v→Γ6,c) transitions of the AlGaAs layers. Our data are consistent with a square well calculation using a conduction‐band offset of 60% of the band‐gap discontinuity. For modulation‐doped heterojunctions, a correlation is observed between a PR feature approximately 18 meV above the GaAs fundamental gap and the presence of a two‐dimensional electron gas.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Fy Semiconductors
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