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1 Jun 1985

Volume 46, Issue 11, pp. 1013-1110

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Detection of thermal waves through optical reflectance

Allan Rosencwaig, Jon Opsal, W. L. Smith, and D. L. Willenborg

Appl. Phys. Lett. 46, 1013 (1985); http://dx.doi.org/10.1063/1.95794 (3 pages) | Cited 171 times

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We show that thermal wave detection and analysis can be performed, in a noncontact and highly sensitive manner, through the dependence of sample optical reflectance on temperature. Applications to the study of microelectronic materials are illustrated by an example of measuring the thickness of thin metal films.
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78.66.Bz Metals and metallic alloys
68.60.-p Physical properties of thin films, nonelectronic
79.20.Ds Laser-beam impact phenomena
65.40.De Thermal expansion; thermomechanical effects

Temperature independent Faraday rotation near the band gap in Cd1−xMnxTe

Nils Kullendorff and Bertil Hök

Appl. Phys. Lett. 46, 1016 (1985); http://dx.doi.org/10.1063/1.95795 (3 pages) | Cited 23 times

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Faraday rotation spectra have been measured for Cd1−xMnxTe, 0.10≤x≤0.20, for temperatures from 213 to 373 K. At wavelengths well above the fundamental absorption edge the rotation decreases with increasing temperature. The opposite temperature dependence is found for shorter wavelengths since the rotation increases strongly when the wavelength approaches the edge and the edge moves towards longer wavelengths with increasing temperature. For each x a wavelength with temperature independent rotation can be found due to a cancellation of these effects. The large and temperature independent rotation is of great interest for optical devices such as magnetic field sensors, isolators, and modulators. By choosing 0.10≤x≤0.25 these devices would be compatible with GaAlAs emitting diodes and lasers. Optical transmission was also measured and was found to be fairly high at wavelengths of interest. A sensor design is presented, allowing dc response and very small physical dimensions.
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78.20.Ls Magneto-optical effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.-e Optical elements, devices, and systems
78.70.Dm X-ray absorption spectra

KNbO3 electro‐optic induced optical waveguide/cut‐off modulator

J.‐C. Baumert, C. Walther, P. Buchmann, H. Kaufmann, H. Melchior, and P. Günter

Appl. Phys. Lett. 46, 1018 (1985); http://dx.doi.org/10.1063/1.95796 (3 pages) | Cited 13 times

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Optical waveguiding and cut‐off modulation have been observed in a structure based on KNbO3 single crystals. The refractive index changes induced by the electro‐optic coefficient r33=64 pm/V allow waveguiding for a voltage of about 20 V. Guided modes have been measured in the wavelength range 0.5–1.3 μm.
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42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects
42.82.-m Integrated optics

Optical phase conjugation with frequency up‐conversion via high‐order, nondegenerate multiwave mixing

Martial Ducloy

Appl. Phys. Lett. 46, 1020 (1985); http://dx.doi.org/10.1063/1.95797 (3 pages) | Cited 10 times

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One proposes a new way of getting optical phase conjugation, associated to frequency conversion (namely, frequency doubling, frequency multiplication or mixing), within a broad angular field of view. This technique is based on nondegenerate, higher order multiwave mixing in a phase‐matched backward configuration. Applications to wave front reversal, spatial or temporal information processing with frequency up‐conversion are outlined.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.30.Va Image forming and processing

AlGaAs/GaAs melt‐etched inner stripe laser diode with self‐aligned structure

A. Watanabe, T. Yamada, K. Imanaka, H. Horikawa, Y. Kawai, and M. Sakuta

Appl. Phys. Lett. 46, 1023 (1985); http://dx.doi.org/10.1063/1.95798 (3 pages) | Cited 2 times

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A novel liquid phase epitaxy (LPE) used to fabricate a channeled stripe AlGaAs/GaAs laser diode emitting at 780 nm with a self‐aligned structure is reported. In the present method, only two‐step LPE and a conventional wet chemical etching are required. The inner stripe, 4 μm wide, is grooved by a newly developed preferential melt‐etching technique during crystal growth without exposure of the wafer to air. A maximum cw power output of 28 mW per facet without facet coatings and a threshold current of 50 mA are accomplished. Fundamental transverse mode operation up to 10 mW and single longitudinal mode above 2.5 mW are demonstrated.
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68.55.-a Thin film structure and morphology
81.65.-b Surface treatments
81.10.Fq Growth from melts; zone melting and refining
42.55.Px Semiconductor lasers; laser diodes

Observation of modulation speed enhancement, frequency modulation suppression, and phase noise reduction by detuned loading in a coupled‐cavity semiconductor laser

Kerry Vahala, Joel Paslaski, and Amnon Yariv

Appl. Phys. Lett. 46, 1025 (1985); http://dx.doi.org/10.1063/1.95799 (3 pages) | Cited 12 times

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Simultaneous direct modulation response enhancement, phase noise (linewidth) reduction, and frequency modulation suppression are produced in a coupled‐cavity semiconductor laser by the detuned loading mechanism.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Single longitudinal mode operation of long, integrated passive cavity InGaAsP lasers

K. Matsuda, T. Fujita, J. Ohya, M. Ishino, H. Sato, H. Serizawa, and J. Shibata

Appl. Phys. Lett. 46, 1028 (1985); http://dx.doi.org/10.1063/1.95800 (3 pages) | Cited 9 times

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We propose a new 1.3‐μm wavelength InGaAsP laser—the integrated passive cavity (IPC) laser—and demonstrate its device performances compared with conventional lasers fabricated under similar procedures. The long IPC laser (3.55‐mm‐long passive cavity), as well as the short IPC laser, exhibited single frequency oscillation even just above the threshold, and the maximum ratio of longitudinal main to submode exceeded 30 dB. They also showed favorable effects in the oscillation frequency stabilization.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Variable frequency picosecond optical pulse generation from laser diodes by electrical feedback

S. H. Izadpanah, J. Paslaski, Z. Rav‐Noy, S. Margalit, and A. Yariv

Appl. Phys. Lett. 46, 1030 (1985); http://dx.doi.org/10.1063/1.95801 (3 pages) | Cited 1 time

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High repetition rate picosecond optical pulse generation is achieved by providing electrical feedback (with and without external gain) to a self‐pulsating laser diode. The feedback improves pulsation short‐term stability (<25‐kHz frequency jitter) and narrows the laser pulses (14 ps).
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Fc Modulation, tuning, and mode locking
85.60.Jb Light-emitting devices

High resolution infrared measurements of the OH− bands in KTiOPO4

William M. Theis, George B. Norris, and Marc D. Porter

Appl. Phys. Lett. 46, 1033 (1985); http://dx.doi.org/10.1063/1.95802 (3 pages) | Cited 15 times

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High resolution infrared transmission measurements were performed at 10–300 K on KTiOPO4 crystals grown by hydrothermal or flux methods. The previously reported low resolution OH− band at 2.8 μm resolved into more than 100 lines. The strongest line was identified as a pure OH− stretch which broadened as T2, whereas lines which broadened as T1 were attributed to combinations with librations or other vibrational transitions. Although the integrated OH− related absorption strengths for several crystals were equivalent (±10%), the relative absorption strengths for various groups of lines scaled together and correlated with frequency doubling efficiencies; this indicated the possible occupation of several nonequivalent OH− sites in the lattice. Thus, only a portion of the OH− impurity was detrimental to the nonlinear polarizability.
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78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Long wavelength InGaAsP (λ∼1.3 μm) modified multiquantum well laser

N. K. Dutta, S. G. Napholtz, R. Yen, T. Wessel, T. M. Shen, and N. A. Olsson

Appl. Phys. Lett. 46, 1036 (1985); http://dx.doi.org/10.1063/1.95750 (3 pages) | Cited 9 times

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The fabrication and performance characteristics of InGaAsP (λ∼1.3 μm) double channel planar buried heterostructure lasers with multiquantum well (MQW) active layers are reported. The MQW structure has λg∼1.3 μm InGaAsP active wells and λg∼1.03‐μm InGaAsP barrier layers. The lasers have threshold current of ∼20 mA at 30 °C and external differential quantum efficiencies of ∼0.2 mW/mA/facet at 30 °C. The temperature dependence of threshold current is characterized by T0∼100 K both under electrical and optical pumping. The lasers have been operated to 110 °C and up to ∼30 mW/facet at 25 °C. The measured dynamic linewidth under modulation is ∼2 smaller than that for conventional double heterostructure lasers. The lower temperature dependence of threshold current and smaller dynamic linewidth makes real index‐guided InGaAsP MQW active layer lasers potentially attractive for many system applications.
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42.55.Px Semiconductor lasers; laser diodes

Effect of coupling gas viscosity on the photoacoustic signal

P. Korpiun, B. Büchner, A. C. Tam, and Y. H. Wong

Appl. Phys. Lett. 46, 1039 (1985); http://dx.doi.org/10.1063/1.95751 (3 pages) | Cited 4 times

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The phase angle φ of a gas‐coupled photoacoustic (PA) signal has been measured as a function of coupling gas column thickness lg for a ‘‘one‐dimensional’’ PA cell. The PA signal is excited by a modulated continuous laser beam incident on an opaque solid surface of silicon. We show that the observed data can be explained in a PA model including the consideration of a residual volume in the PA cell, together with the consideration of viscous damping of the PA signal at small lg.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
51.10.+y Kinetic and transport theory of gases
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
42.62.-b Laser applications

Methods for producing ultrahigh magnetic fields

F. S. Felber, M. A. Liberman, and A. L. Velikovich

Appl. Phys. Lett. 46, 1042 (1985); http://dx.doi.org/10.1063/1.95752 (3 pages) | Cited 23 times

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A general class of methods is suggested for producing controlled magnetic fields up to the order of 100 MG. The methods involve radially imploding plasmas in which longitudinal magnetic fields have been entrained. Specific methods of implosion suggested are (a) gas‐puff Z pinch and (b) ablative implosion of a liner by a laser. Applications include reducing fusion ignition thresholds, producing beams of gamma radiation, accelerating particles, and producing high‐energy densities under controlled conditions.
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52.30.-q Plasma dynamics and flow
52.50.Lp Plasma production and heating by shock waves and compression
52.75.Di Ion and plasma propulsion
52.38.-r Laser-plasma interactions

Switching of low density diode plasmas

E. M. Waisman, P. G. Steen, D. E. Parks, and A. Wilson

Appl. Phys. Lett. 46, 1045 (1985); http://dx.doi.org/10.1063/1.95753 (3 pages) | Cited 17 times

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The switching action of low density injected carbon plasmas is investigated by a numerical collisionless two‐dimensional electromagnetic particle simulation. The plasma switch is considered in a planar vacuum transmission line with input current per unit length ramped at 240 A/cm ns during 10 ns, and short circuit output. The calculations, done with C+ ions at 4×1012/cm3, exhibit switching of the current from the plasma switch to the short circuit load. At early times (1–2 ns) a sheath of positive charge forms at the cathode by depletion of the plasma electrons. The electric fields at the cathode are large enough to explain the formation of a denser cathode plasma. The mechanism of switching appears to be, for this density and load conditions, the magnetic limiting of drifting electrons. The ion motion seen plays an insignificant role in this particular case.
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52.75.Kq Plasma switches (e.g., spark gaps)
52.65.-y Plasma simulation
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Ion and radical contributions to hydrogenated amorphous silicon film formation in a dc toroidal discharge

H. Sugai, H. Toyoda, A. Yoshida, and T. Okuda

Appl. Phys. Lett. 46, 1048 (1985); http://dx.doi.org/10.1063/1.95754 (3 pages) | Cited 4 times

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Hydrogenated amorphous silicon films are formed in a low‐pressure dc toroidal discharge. The good plasma confinement by a toroidal magnetic field ensures considerable growth rate of the films even at a low pressure (0.1–10 mTorr). The contributions of ions and radicals to a‐Si:H film growth are clearly separated by the control of substrate bias and gas pressure. The films formed mainly by ion flux indicate large values of optical band gap and hydrogen content, in contrast with films formed by neutral radicals only. In addition, the spectrum of dominant IR absorption is observed to vary with the ratio of ion to radical contributions.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.75.-d Plasma devices
52.80.-s Electric discharges
68.55.-a Thin film structure and morphology

Etch rate enhancement of silicon in CF4‐O2 plasmas

L. K. White and Jer‐Shen Maa

Appl. Phys. Lett. 46, 1050 (1985); http://dx.doi.org/10.1063/1.95755 (3 pages) | Cited 5 times

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An etch rate enhancement of silicon in CF4‐O2 gas mixtures in the presence of alkali metal ion hydroxide contaminants is examined. Sodium ion implanted samples show that the alkali metal ion is responsible for this effect. Other solution contamination experiments show that this effect was absent for hydroxide and chloride contaminants without an alkali metal, chlorine containing etchant gas mixtures, phosphorus‐doped silicon, Si3N4, and TaSi2 substrates.
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81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
52.40.Hf Plasma-material interactions; boundary layer effects

Eutectic melting by pulsed ion beam irradiation

R. Fastow, J. W. Mayer, T. Brat, M. Eizenberg, and J. O. Olowolafe

Appl. Phys. Lett. 46, 1052 (1985); http://dx.doi.org/10.1063/1.95756 (3 pages) | Cited 12 times

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Interfacial melting at near eutectic compositions has been observed for three metal‐silicon systems using pulsed ion beam irradiation. In all cases (Ni/Si, Co/Si, and Pt/Si), the reaction occurred below the melting temperature of either the deposited metal layer or the silicon substrate. Compositional steps in the reacted Ni/Si, Co/Si, and Pt/Si films were measured using Rutherford backscattering spectroscopy. These steps had the near eutectic compositions of Ni0.5Si0.5, Co0.73Si0.27, and Pt0.77Si0.23, respectively. The Ni/Si sample was examined using planar and cross‐sectional transmission electron microscopy. It was found that the reacted layer, composed of polycrystalline NiSi and Ni2Si, formed a sharp interface with the silicon.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.55.-a Thin film structure and morphology

Thermal coupling of particulates to substrates

S. Utterback, F. H. Dacol, H. Ermert, and R. L. Melcher

Appl. Phys. Lett. 46, 1054 (1985); http://dx.doi.org/10.1063/1.95757 (3 pages) | Cited 2 times

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The thermal radiation emitted by small particles heated by a modulated electron beam can be analyzed to give a quantitative measure of the thermal coupling between the particle and the substrate on which it rests.
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44.10.+i Heat conduction
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
79.20.Kz Other electron-impact emission phenomena
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

Electron diffraction observation of epitaxial silicon grown on a CaF2/Si(100) structure

Masayoshi Sasaki, Norio Hirashita, Hiroshi Onoda, and Shirou Hagiwara

Appl. Phys. Lett. 46, 1056 (1985); http://dx.doi.org/10.1063/1.95758 (3 pages) | Cited 14 times

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Growth and crystalline quality of epitaxial Si on a CaF2/Si(100) structure have been investigated by in situ reflection high‐energy electron diffraction observation. Epitaxial Si/CaF2/Si structures have been formed by vacuum evaporation using the technique of amorphous Si predeposition. It has been shown that the predeposited amorphous Si layer crystallizes epitaxially during subsequent heating, but contains twins in the film. The twins remain in the subsequently grown Si layer as thick as 100 nm. However, the twins no longer remain more than 100 nm thick in the epitaxial Si layer. Three types of superstructures have been found at the surface of Si/CaF2/Si(100) structures for different Si epitaxial temperatures, and they have been related to the amount of Ca segregated at the surface.
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68.55.-a Thin film structure and morphology
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Density measurements, calorimetry, and transmission electron microscopy of icosahedral Mn14Al86

K. F. Kelton and T. W. Wu

Appl. Phys. Lett. 46, 1059 (1985); http://dx.doi.org/10.1063/1.95759 (2 pages) | Cited 33 times

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The density and heat of crystallization of rapidly quenched Mn14Al86 were measured and found to be 3.287±0.038 g/cm3 and 16.2 cal/g, respectively. Transmission electron microscopy revealed nodules of the icosahedral phase with lattice fringes. No Kikuchi lines were observed in either selected area or convergent beam diffraction.
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61.66.Dk Alloys
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
06.30.Dr Mass and density
61.50.Ks Crystallographic aspects of phase transformations; pressure effects

Localized epitaxial growth of hexagonal and tetragonal MoSi2 on (111) Si

W. T. Lin and L. J. Chen

Appl. Phys. Lett. 46, 1061 (1985); http://dx.doi.org/10.1063/1.95760 (3 pages) | Cited 21 times

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Both hexagonal and tetragonal forms of MoSi2 (h‐MoSi2 and t‐MoSi2) were grown epitaxially on (111)Si for the first time. The best epitaxy was obtained in samples annealed at 1050 °C for 1 h. The orientation relationships between epitaxial h‐MoSi2 and Si were determined to be [0001]MoSi2//[111]Si and (2020)MoSi2//(202)Si whereas those between epitaxial t‐MoSi2 and Si were analyzed to be [110]MoSi2//[111]Si and (004)MoSi2//(202)Si. Regular interfacial dislocations, 100 Å in spacing, were identified to be of edge type with (1)/(6) 〈112〉 Burgers vectors. Preliminary investigations indicated that a number of other technologically important refractory silicides can all be grown epitaxially on silicon. The results present an exciting prospect to fabricate novel classes of devices with desirable characteristics.
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68.55.-a Thin film structure and morphology
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Microstructure of silicon implanted with high dose oxygen ions

C. Jaussaud, J. Stoemenos, J. Margail, M. Dupuy, B. Blanchard, and M. Bruel

Appl. Phys. Lett. 46, 1064 (1985); http://dx.doi.org/10.1063/1.95761 (3 pages) | Cited 51 times

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Buried implanted oxide layers have been formed by high dose implantation of oxygen ions (3×1018 ions cm−2) into 〈100〉 silicon wafers, at a constant temperature of 500 °C. The implanted layers were studied by cross‐sectional transmission electron microscopy and secondary ion mass spectroscopy. The defects at both the top Si/SiO2 and the SiO2/bulk Si interfaces are shown to be SiO2 precipitates. The precipitates are unstable and can be eliminated by heat treatment, and a homogeneous top silicon layer with a low density of dislocations can be obtained.
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61.72.U- Doping and impurity implantation
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.40.Gh Other heat and thermomechanical treatments

Direct observation of an enhanced concentration of the principal deep level EL2 at single dislocations

D. J. Stirland, M. R. Brozel, and I. Grant

Appl. Phys. Lett. 46, 1066 (1985); http://dx.doi.org/10.1063/1.95762 (3 pages) | Cited 17 times

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Regions of low dislocation density (∼5×102 cm−2) in 2‐mm‐thick {001} wafers from indium doped, liquid encapsulated Czochralski grown, 2‐in‐diam. GaAs ingots have been examined by transmission infrared microscopy. Discrete dislocations were located and identified by their etching behavior in the calibrated A/B etchant. Comparison of identical regions before and after etching showed that increased absorption at 1 μm occurred at the sites of each dislocation. The results demonstrate directly that enhancement of [EL2], the concentration of the deep donor level EL2, occurs at single dislocations.
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78.40.Fy Semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Photoluminescence study of InGaAs grown on InP by vapor phase epitaxy—Effects of O2 injection and substrate orientation

Kikuo Makita, Akiko Gomyo, Kenkoh Taguchi, and Tohru Suzuki

Appl. Phys. Lett. 46, 1069 (1985); http://dx.doi.org/10.1063/1.95763 (3 pages) | Cited 1 time

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Photoluminescence measurement at 4.2 K was carried out to investigate factors (O2 injection and substrate orientation) influencing incorporation of impurities in the InGaAs growth during hydride vapor phase epitaxy. Purification with reduction of both donor and acceptor impurities in the O2 injected growth was confirmed spectroscopically for the first time. InGaAs growth on (100) InP substrates slightly misoriented to the (110) direction was found to show a significant increase in incorporation efficiency for impurities.
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78.40.Fy Semiconductors
68.55.-a Thin film structure and morphology

Stability of (100)GaAs surfaces in aqueous solutions

D. E. Aspnes and A. A. Studna

Appl. Phys. Lett. 46, 1071 (1985); http://dx.doi.org/10.1063/1.95764 (3 pages) | Cited 19 times

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Abrupt (100) GaAs surfaces are observed to be stable against the development of pervasive microscopic roughness in strongly basic (pH 14) solutions but not in NH4OH and neutral H2O. Strong acids (pH 0) produce deep microroughness. The stability can be understood from the free energy of Ga ions in solution and the action of electrophilic bifunctional etching groups on the Ga–As bond.
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81.65.-b Surface treatments
73.40.Mr Semiconductor-electrolyte contacts
81.40.Tv Optical and dielectric properties related to treatment conditions
82.80.Fk Electrochemical methods

Electric field dependent cathodoluminescence of III‐V compound heterostructures: A new interface characterization technique

N. Magnea, P. M. Petroff, F. Capasso, R. A. Logan, K. Alavi, and A. Y. Cho

Appl. Phys. Lett. 46, 1074 (1985); http://dx.doi.org/10.1063/1.95765 (3 pages) | Cited 4 times

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A new method for the analysis of heterostructures is described and applied to the characterization of InP‐InGaAs and AlInAs‐InGaAs interfaces. The technique’s principle relies on the selective quenching of the cathodoluminescence of each layer induced by application of an electric field. The cathodoluminescence quenching curves as a function of reverse bias voltage give the position of the interfaces in good agreement with the capacitance versus voltage profile, and hysteresis in the luminescence behavior is ascribed to deep levels at or near the interfaces.
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78.60.Hk Cathodoluminescence, ionoluminescence
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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