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1 Jun 1985

Volume 46, Issue 11, pp. 1013-1110

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Raman microprobe analysis of tungsten silicide

Peter J. Codella, Fran Adar, and Yung S. Liu

Appl. Phys. Lett. 46, 1076 (1985); http://dx.doi.org/10.1063/1.95766 (3 pages) | Cited 11 times

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The Raman spectrum of tungsten silicide has been observed and is reported for the first time. It was obtained on the MOLE☒ Raman microprobe during the examination of an annealed sample of tungsten deposited over crystalline silicon. A similar examination of fine tungsten lines, 8 μm wide by 20 nm thick, selectively deposited on a crystalline silicon surface using laser‐induced chemical vapor deposition techniques, produced an identical spectrum superimposed with that of the silicon substrate. This observation demonstrates the capability of the Raman microprobe to analyze the formation of solid silicide phases on a microscopic scale. The technique offers a rapid and nondestructive method for the identification of tungsten silicide either in the bulk or as a component in an integrated circuit.
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78.30.Er Solid metals and alloys
68.55.-a Thin film structure and morphology
82.80.Dx Analytical methods involving electronic spectroscopy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Carrier lifetime model for the optical degradation of amorphous silicon solar cells

Z E. Smith, S. Wagner, and B. W. Faughnan

Appl. Phys. Lett. 46, 1078 (1985); http://dx.doi.org/10.1063/1.95767 (3 pages) | Cited 29 times

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The light‐induced performance degradation of amorphous silicon solar cells is described well by a model in which the carrier lifetimes are determined by the dangling bond density. Degradation will be slower in solar cells operating at lower excess carrier concentrations. This is documented with a comparison of degradation data for cells at open circuit versus load, and for single versus cascade cells. At sufficiently long times, the efficiency will decrease at approximately the same rate for all cases, with an offset in time between the individual cases which can be calculated.
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84.60.Jt Photoelectric conversion
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.40.+w Photoconduction and photovoltaic effects

Epitaxial growth of (100)CdTe on (100)GaAs induced by pulsed laser evaporation

J. J. Dubowski, D. F. Williams, P. B. Sewell, and P. Norman

Appl. Phys. Lett. 46, 1081 (1985); http://dx.doi.org/10.1063/1.95768 (3 pages) | Cited 31 times

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Epitaxial (100) CdTe films were grown on the (100) GaAs surface by pulsed laser evaporation. The growth was achieved on substrates held at 260 °C and under a pressure of about 8×10−8 Torr. High‐energy electron diffraction, x‐ray diffraction, and UV reflectivity studies have shown that epilayers of high crystalline quality were obtained. The surface morphology of films thicker than about 0.4 μm approached atomic smoothness. No incorporated impurities, including oxygen and carbon, were found by Auger electron spectroscopy in the films studied.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
68.60.-p Physical properties of thin films, nonelectronic
79.20.Ds Laser-beam impact phenomena

Molecular beam epitaxially grown circular U‐groove barrier transistor

C. Y. Chang, Y. H. Wang, W. C. Liu, S. A. Liao, and K. Y. Cheng

Appl. Phys. Lett. 46, 1084 (1985); http://dx.doi.org/10.1063/1.95769 (3 pages) | Cited 1 time

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A new version of simple GaAs n+‐n‐δ(p+)‐n‐n+ ultrathin base transistor with U‐groove base contact is demonstrated by molecular beam epitaxy which possesses a circular mesa etched base. The potential barrier height can be directly modulated by the applied base voltage and thus the current can traverse over the barrier by thermionic emission. It is a voltage‐controlled device. Its transconductance increases with increasing collector‐emitter and base‐emitter voltage. The collector current density of the present device is larger than 1.5 kA/cm2 and the transconductance is larger than 200 mS/mm, which are larger than those of the previously reported V‐groove device.
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85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology

Elimination of oval defects in epilayers by using chemical beam epitaxy

W. T. Tsang

Appl. Phys. Lett. 46, 1086 (1985); http://dx.doi.org/10.1063/1.95770 (3 pages) | Cited 20 times

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One ubiquitous problem that continues to haunt over molecular beam epitaxy (MBE) persistently throughout all these year and still without a good controllable solution is the presence of oval defects in gallium‐containing compound semiconductor epilayers. While these defects have not presented major problems for discrete devices, they are likely to be a serious obstacle for integrated circuit applications. We showed that oval defects were present in GaAs and In0.53Ga0.47As epilayers grown by conventional MBE process using elemental Ga and In as group III sources, and either solid As4 or thermally cracked As4 from gas mixtures of trimethylarsine and hydrogen. On the other hand, the use of the chemical beam epitaxy in which the Ga and In were derived by thermal pyrolysis of their metal alkyls at the heated substrate surface resulted reproducibly in epilayers free of oval defects over the entire substrate surface of ∼8 cm diameter (limited by the substrate holder size). On the basis of the present results it is evident that the oval defects were related to the use of elemental Ga melt as the evaporant in conventional MBE.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Effects of substrate temperature on the orientation of ultrahigh vacuum evaporate Si and Ge films

S. S. Chao, J. Gonzalez‐Hernandez, D. Martin, and R. Tsu

Appl. Phys. Lett. 46, 1089 (1985); http://dx.doi.org/10.1063/1.95771 (3 pages) | Cited 13 times

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Studies of texture in ultrahigh vacuum deposited Si and Ge films show a (220) preferred orientation for the as‐prepared polycrystalline films. On the other hand, amorphous silicon (a‐Si) followed by thermal crystallization exhibits a (111) orientation when contamination with oxygen is allowed prior to annealing. Oxygen incorporation is only indirectly involved in promoting the (111) preferred orientation via high annealing temperature. Preferred orientation is absent when contamination is avoided. In contrast, thermally crystallized a‐Ge films show no preferred orientation regardless of oxygen contamination.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Growth of molybdenum and tungsten on GaAs in a molecular beam epitaxy system

J. Bloch, M. Heiblum, and Y. Komem

Appl. Phys. Lett. 46, 1092 (1985); http://dx.doi.org/10.1063/1.95772 (3 pages) | Cited 16 times

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Thin films of Mo and W were grown on top of (100) GaAs in a molecular beam epitaxy system. Mo grew epitaxially between 200 and 450 °C with its (111) plane parallel to (100) GaAs plane. W grew as a random polycrystalline deposit. For both metals, interaction with the GaAs occurred during growth at 500 °C. Schottky barrier heights determined by current and capacitance measurements show that the electrical properties of the metal‐GaAs interface do not strongly depend on the growth temperature and the microstructure of the films.
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68.55.-a Thin film structure and morphology
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions

Polycrystalline thin‐film Cu2−xSe/CdS solar cell

Wen S. Chen, J. M. Stewart, and R. A. Mickelsen

Appl. Phys. Lett. 46, 1095 (1985); http://dx.doi.org/10.1063/1.95773 (3 pages) | Cited 31 times

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The development of a polycrystalline thin‐film solar cell utilizing a backwall designed heterojunction structure based upon p‐type Cu2−xSe and n‐type CdS semiconductor materials is described. The electrical, optical, and structural properties of the deposited thin‐film materials are described. A device efficiency of 5.38% under simulated AM1 illumination is reported.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
75.20.Ck Nonmetals

Niobium nitride Josephson tunnel junctions with magnesium oxide barriers

Akira Shoji, Masahiro Aoyagi, Shin Kosaka, Fujitoshi Shinoki, and Hisao Hayakawa

Appl. Phys. Lett. 46, 1098 (1985); http://dx.doi.org/10.1063/1.95774 (3 pages) | Cited 47 times

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Niobium nitride‐niobium nitride Josephson tunnel junctions have been fabricated using amorphous magnesium oxide (a‐MgO) films as barriers. These junctions have excellent tunneling characteristics. For example, a large gap voltage (Vg=5.1 mV), a large product of the maximum critical current and the normal tunneling resistance (IcRn=3.25 mV), and a small subgap leakage current (Vm=45 mV, measured at 3 mV) have been obtained for a NbN/a‐MgO/NbN junction. The critical current of this junction remains finite up to 14.5 K.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects

Inorganic ion beam resist for additive plating of metallic interconnects

Svend Stensig Eskildsen and Gunnar Sørensen

Appl. Phys. Lett. 46, 1101 (1985); http://dx.doi.org/10.1063/1.95775 (2 pages) | Cited 9 times

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A new approach to produce metallic conductors on insulating materials is presented. The conductor is made by electroless plating of a catalytic pattern, which is generated by ion beam decompositon of platinum‐metal compounds. On polyimide, metallic lines are produced with good adhesion, and it is demonstrated that the lines can be made between two levels. The plating process on polyimide has a surprisingly small inhibition period of 20 s and a plating speed of 30 nm/min which is about twice the normal.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Mechanisms for fluorocarbon reactive ion beam etching of SiO2 by simultaneous Auger electron spectroscopy measurements

D. J. Thomson and C. R. Helms

Appl. Phys. Lett. 46, 1103 (1985); http://dx.doi.org/10.1063/1.95776 (2 pages) | Cited 5 times

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Auger electron spectroscopy was used to measure the carbon, fluorine, oxygen, and silicon concentrations on an SiO2 surface under bombardment by fluorocarbon ions. The results include the finding that, for CF+3 ions with energies >750 eV, little carbon is observed on the SiO2 surface, indicating a rapid reaction of the carbon with the oxygen. In addition, analysis of the Si LVV line shape showed the presence of flourinated Si on the surface, which has been inferred but never directly measured by other techniques.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Observation of electron transport in polyethylene terephthalate and the radiation hardening of dielectrics

S. R. Kurtz

Appl. Phys. Lett. 46, 1105 (1985); http://dx.doi.org/10.1063/1.95724 (3 pages) | Cited 5 times

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Electron‐induced conductivity measurements were performed on polyethylene terephthalate to compare electron and hole contributions to the radiation‐induced conductivity. The electron mobility in this material was found to be ≳102 times that of the holes. This result explains an earlier observation that the radiation‐induced conductivity of polyethylene terephthalate can be radically reduced by chemically doping this dielectric with electron acceptor molecules.
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61.80.Fe Electron and positron radiation effects
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.40.Rs Electrical and magnetic properties related to treatment conditions

New flattening technique of iron garnet films by laser etching

Koji Ando, Norio Takeda, and Naoki Koshizuka

Appl. Phys. Lett. 46, 1107 (1985); http://dx.doi.org/10.1063/1.95725 (3 pages)

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A new flattening technique was found through a study of the acceleration of the chemical etching process of iron garnet films by laser irradiation. The films on Gd3Ga5O12 substrates immersed in phosphoric acid were etched by irradiation with a laser beam of 581‐nm wavelength. Regardless of the initial film thickness, the etching practically terminated when the thickness reached a certain magnitude. By using this phenomenon, we succeeded in flattening the film and integrating multiple different films on a single substrate.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
85.70.Ge Ferrite and garnet devices
FREE

Comment on ‘‘Electrodynamic explosions in liquids’’ [Appl. Phys. Lett. 46, 468 (1985)]

R. Meservey

Appl. Phys. Lett. 46, 1110 (1985); http://dx.doi.org/10.1063/1.95726 (1 page)

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Abstract Unavailable
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47.65.-d Magnetohydrodynamics and electrohydrodynamics
52.80.Qj Explosions; exploding wires
52.80.Wq Discharge in liquids and solids
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