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1 Jan 1985

Volume 46, Issue 1, pp. 1-102

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High performance photovoltaic infrared devices in Hg1−xCdxTe on sapphire

R. A. Reidel, E. R. Gertner, D. D. Edwall, and W. E. Tennant

Appl. Phys. Lett. 46, 64 (1985); http://dx.doi.org/10.1063/1.95854 (3 pages) | Cited 12 times

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A combination of organometallic vapor phase epitaxy and liquid phase expitaxy (LPE) has been used to grow CdTe on sapphire. The resultant heterostructure has been used as a substrate for LPE growth of Hg0.7Cd0.3Te. Photodiodes in the HgCdTe show excellent properties. Typical R0A products are ≥106 Ω cm at 77 K for Hg1−xCdxTe layers with cut‐off wavelengths of 4.8–5.2 μm at 77 K. The backside‐illuminated spectral response was broadband with quantum efficiencies typically >80% (without antireflection coating).
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68.55.-a Thin film structure and morphology
72.40.+w Photoconduction and photovoltaic effects
85.60.Dw Photodiodes; phototransistors; photoresistors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Microplasma characteristics in InP‐In0.53Ga0.47As long wavelength avalanche photodiodes

N. Magnea, P. M. Petroff, F. Capasso, R. A. Logan, and P. W. Foy

Appl. Phys. Lett. 46, 66 (1985); http://dx.doi.org/10.1063/1.95855 (3 pages) | Cited 3 times

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Characterization of microplasmas has been performed on InP‐In0.53Ga0.47As avalanche photodiodes using electron induced current and low‐temperature cathodoluminescence measurements. Microplasmas are shown to be associated with a local increase of the electric field resulting from doping fluctuations which are tentatively associated with impurity segregation at crystal imperfections.
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85.60.Dw Photodiodes; phototransistors; photoresistors
72.30.+q High-frequency effects; plasma effects
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
78.60.Hk Cathodoluminescence, ionoluminescence

Influence of light‐induced defects in hydrogenated amorphous silicon on charge carrier dynamics

A. Werner and M. Kunst

Appl. Phys. Lett. 46, 69 (1985); http://dx.doi.org/10.1063/1.95856 (2 pages) | Cited 5 times

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Charge carrier decay processes in hydrogenated amorphous silicon after extended illumination are studied by the time‐resolved microwave conductivity method. It is shown that creation of metastable defects depends on illumination time. Two different defects can be distinguished: one which decreases the charge carrier lifetime in the bulk, whereas the other one increases the subband gap absorption at the surface.
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72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.-y Defects and impurities in crystals; microstructure
78.70.Gq Microwave and radio-frequency interactions

One‐picosecond optical nor gate at room temperature with a GaAs‐AlGaAs multiple‐quantum‐well nonlinear Fabry–Perot étalon

A. Migus, A. Antonetti, D. Hulin, A. Mysyrowicz, H. M. Gibbs, N. Peyghambarian, and J. L. Jewell

Appl. Phys. Lett. 46, 70 (1985); http://dx.doi.org/10.1063/1.95857 (3 pages) | Cited 38 times

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The speed of a GaAs‐AlGaAs optical logic gate is time resolved using a 100‐fs laser system. It shows that the gating operation can be performed in ≂1 ps, the fastest reported for such a low‐energy optical device. The lowest incident switching for such a device is ≲3 pJ.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
42.65.-k Nonlinear optics
42.79.-e Optical elements, devices, and systems
78.20.-e Optical properties of bulk materials and thin films

Optical properties of HgTe‐CdTe superlattices

G. Y. Wu, C. Mailhiot, and T. C. McGill

Appl. Phys. Lett. 46, 72 (1985); http://dx.doi.org/10.1063/1.95858 (3 pages) | Cited 10 times

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The first theoretical calculation of the optical properties of HgTe‐CdTe superlattices is presented. The envelope function method is used to obtain the superlattice band structure, and then an interpolation scheme is employed to compute ϵ2(ω) the imaginary part of a dielectric function. The major conclusion is that the optical properties of the superlattice near the band edges are such that the absorption may be comparable to or ever larger than that in the alloys.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
75.20.Ck Nonmetals
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
71.20.-b Electron density of states and band structure of crystalline solids

Stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers defined by Si diffusion and disordering

K. Meehan, P. Gavrilović, N. Holonyak, R. D. Burnham, and R. L. Thornton

Appl. Phys. Lett. 46, 75 (1985); http://dx.doi.org/10.1063/1.95859 (3 pages) | Cited 41 times

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The use of Si diffusion and impurity‐induced layer disordering, via a Si3N4 mask pattern, to construct stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers on n‐type substrates is described. This leads to a convenient form of index‐guided buried‐heterostructure laser that is easily constructed and replicated (in various geometries) on commonly available n‐type GaAs substrate.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
66.30.J- Diffusion of impurities
85.60.Jb Light-emitting devices

High resistivity InGaAs(Fe) grown by a liquid phase epitaxial substrate‐transfer technique

S. H. Groves, V. Diadiuk, M. C. Plonko, and D. L. Hovey

Appl. Phys. Lett. 46, 78 (1985); http://dx.doi.org/10.1063/1.95803 (3 pages) | Cited 10 times

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Reproducible growth of high quality InGaAs(Fe) by liquid phase epitaxy has been achieved by using long pregrowth bakes and a substrate‐transfer apparatus. A mixed conduction model with fixed electron and hole mobilities is shown to explain the large variation of transport properties with Fe doping. This model predicts a maximum resistivity of 2500 Ω cm, and samples with resistivities within 5% of this value have been grown.
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81.40.Gh Other heat and thermomechanical treatments
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology

Spatial distribution of radiation‐induced interface traps under the gate of an Al/SiO2/Si capacitor

Viktor Zekeriya, Amy Wong, and T‐P. Ma

Appl. Phys. Lett. 46, 80 (1985); http://dx.doi.org/10.1063/1.95805 (3 pages) | Cited 7 times

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The radiation‐induced interface trap density in an Al/SiO2/Si capacitor has been found to exhibit a systematic lateral variation under the gate area as one probes from the edge toward the center of the device. This spatial variation correlates well with the lateral distribution of the gate Al induced interfacial stresses, and the results provide further support to one earlier conclusion that the metal‐oxide‐Si device radiation sensitivity depends strongly on its interfacial stress distribution.
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61.80.Cb X-ray effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces

Light emission from zero‐dimensional excitons—Photoluminescence from quantum wells in strong magnetic fields

H. Sakaki, Y. Arakawa, M. Nishioka, J. Yoshino, H. Okamoto, and N. Miura

Appl. Phys. Lett. 46, 83 (1985); http://dx.doi.org/10.1063/1.95806 (3 pages) | Cited 28 times

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We report, for the first time, the spontaneous light emission from ‘‘zero‐dimensional exciton states’’ in GaAs/GaAlAs quantum wells under a high magnetic field at 80 K. The formation of such fully quantized states is evidenced by observing the wavelength shift Δ λ of the spontaneous emission peak as well as the narrowing of the spectrum width as the magnetic field is raised up to 15 T. The observed shift Δλ is shown to be well explained by the theory in which the high magnetic field effect on two‐dimensional hydrogenic exciton is taken into account. The formation of such a novel state is further evidenced by the strong anisotropy of the photoluminescence spectrum, which depends on the direction of the magnetic field.
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78.40.Fy Semiconductors
71.35.-y Excitons and related phenomena
78.20.Ls Magneto-optical effects

Microstructure and formation mechanism of porous silicon

M. I. J. Beale, N. G. Chew, M. J. Uren, A. G. Cullis, and J. D. Benjamin

Appl. Phys. Lett. 46, 86 (1985); http://dx.doi.org/10.1063/1.95807 (3 pages) | Cited 130 times

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A systematic study is presented of the effects of silicon dopant type, resistivity, current density, and hydrofluoric acid concentration on the formation and properties of porous silicon. Cross‐section transmission electron microscopy revealed the presence of two distinct microstructures. The structure formed is determined by the doping level with the transition occurring near degeneracy. A model of the anodisation process is presented which is based on the semiconducting properties of the material and which explains the formation of the two different types of porous structure observed.
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73.40.Mr Semiconductor-electrolyte contacts
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Organometallic vapor phase epitaxial growth and characterization of high purity GaInAs on InP

Kent W. Carey

Appl. Phys. Lett. 46, 89 (1985); http://dx.doi.org/10.1063/1.95808 (3 pages) | Cited 15 times

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GaInAs grown on InP at atmospheric pressure using organometallic vapor phase epitaxy is characterized by x‐ray diffraction, transmission electron microscopy (TEM), and Hall measurements. The sources used are TMIn, TMGa, AsH3, and PH3 in a carrier gas of H2. Double crystal x‐ray diffraction is used to evaluate the mismatch and crystal quality of the GaInAs epitaxial films. Full widths at half‐maximum intensity (ω1/2) of the double crystal diffraction peak as small as 50 arc s are obtained. The average ω1/2 is less than 80 arc s for all films grown at deposition temperatures between 520 and 540 °C and with mismatch strains between −4×10−3 and +1×10−3. Standard TEM is used to image Ga0.47In0.53As on InP in cross section. No planar defects and few dislocations are present. High resolution TEM of the Ga0.47Ino.53As/InP interface shows that no strain or mismatch related defects are present for nearly lattice‐matched films. Hall mobilities of 10 500 and 47 500 cm2/Vs at 300 and 77 K are measured at n=2×1015 cm−3. These values are comparable to those of good liquid phase epitaxial layers.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
61.72.-y Defects and impurities in crystals; microstructure

Single‐crystal n‐InAs coupled Josephson junction

Tsuyoshi Kawakami and Hideaki Takayanagi

Appl. Phys. Lett. 46, 92 (1985); http://dx.doi.org/10.1063/1.95809 (3 pages) | Cited 25 times

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A high electron mobility single‐crystal n‐InAs coupled Josephson junction with refractory metal Nb electrodes has been fabricated. Josephson current has been obtained for devices with electron carrier concentrations of 1016–1018 cm−3 and with Nb electrode spacings longer than 0.5 μm. The devices have a planar geometry with implicit potential for gate control. The rf sputter cleaning of the InAs surface prior to Nb deposition is found to have significant effects on the performance of the devices. The device characteristics are explained by the proximity effect theory.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
73.40.Mr Semiconductor-electrolyte contacts

Period doubling and chaos in a directly modulated laser diode

Chang‐Hee Lee, Tae‐Hoon Yoon, and Sang‐Yung Shin

Appl. Phys. Lett. 46, 95 (1985); http://dx.doi.org/10.1063/1.95810 (3 pages) | Cited 47 times

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It is shown theoretically that the directly modulated laser diode, with the modulation frequency of its injection current comparable to the relaxation oscillation frequency, exhibits period doubling route to chaos as the modulation index of current is increased. The effect of spontaneous emission factor on the chaotic behavior in the laser diode is also studied.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.65.-k Nonlinear optics
05.45.-a Nonlinear dynamics and chaos

Photochemical generation and deposition of copper from a gas phase precursor

C. R. Jones, F. A. Houle, C. A. Kovac, and T. H. Baum

Appl. Phys. Lett. 46, 97 (1985); http://dx.doi.org/10.1063/1.95811 (3 pages) | Cited 42 times

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The photochemical generation and deposition of copper metal from a volatile copper coordination complex are described. Pulsed and cw ultraviolet light sources were used to induce deposition. The chemical compositions of the films are compared for all methods.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.50.-m Photochemistry

Transport properties of an ion implanted polydiacetylene

B. S. Elman, D. J. Sandman, and M. A. Newkirk

Appl. Phys. Lett. 46, 100 (1985); http://dx.doi.org/10.1063/1.95831 (3 pages) | Cited 18 times

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Using 150‐keV 75As ion beam irradiation, the conductivity of poly [1.6‐bis (N‐carbazolyl)‐2.4 hexadiyne] crystals is increased by more than 15 orders of magnitude with respect to the value for unimplanted material. dc resistivity measurements are performed in the temperature range 20 K<T<290 K and the results yield a functional form ρ(T)=ρ0 exp(T0/T)m with a temperature‐dependent exponential factor 1/2<m<1, where m≂1 at high (T>190 K) temperatures and m≂1/2 at low (T<80 K) temperatures. Mechanisms of conduction are considered in terms of existing theoretical models.
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72.80.Le Polymers; organic compounds (including organic semiconductors)
61.80.Jh Ion radiation effects
61.72.U- Doping and impurity implantation
72.20.Pa Thermoelectric and thermomagnetic effects
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