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15 Jan 1985

Volume 46, Issue 2, pp. 105-207

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Ridge waveguide distributed feedback lasers with electron beam defined gratings

H. Temkin, G. J. Dolan, R. A. Logan, R. F. Kazarinov, N. A. Olsson, and C. H. Henry

Appl. Phys. Lett. 46, 105 (1985); http://dx.doi.org/10.1063/1.95700 (3 pages) | Cited 7 times

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We describe a ridge waveguide distributed feedback laser operating at λ=1.5 μm. The ridge waveguide has been formed by liquid phase epitaxial overgrowth over a dielectric‐defined narrow stripe. Second order diffraction gratings have been written using electron beam writing and transferred by reactive ion milling. cw threshold currents of these lasers vary from 80 to 150 mA and single mode operation over a temperature range of 60 °C has been demonstrated. Even under 1‐GHz modulation the Bragg mode intensity is at least 3000 times greater than that of the residual Fabry–Perot modes.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Dj Gratings
42.60.By Design of specific laser systems

Precise measurements and computer simulations of mode‐hopping phenomena in semiconductor lasers

M. Ohtsu, Y. Otsuka, and Y. Teramachi

Appl. Phys. Lett. 46, 108 (1985); http://dx.doi.org/10.1063/1.95701 (3 pages) | Cited 16 times

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We precisely measured temporal intensity variations of each longitudinal mode of a two‐mode 1.5‐μm InGaAsP laser. The intensities of these modes showed clear hopping between each other. It became clear for the first time that their power spectral densities represented typical Lorentzian with a cut‐off frequency between 0.7 and 1.9 MHz. This means that mode hopping follows the stochastics of a Poisson process, i.e., it occurs completely at random in time. The results of analog computer simulation, using a detailed theoretical model, supported the experimental results. It is concluded that spontaneous emission acts as a trigger to this hopping.
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42.55.Px Semiconductor lasers; laser diodes

Nitrification of zirconium by cw CO2 laser irradiation in ambient atmosphere

I. Ursu, I. N. Mihailescu, L. Nanu, A. M. Prokhorov, V. I. Konov, and V. G. Ralchenko

Appl. Phys. Lett. 46, 110 (1985); http://dx.doi.org/10.1063/1.95702 (3 pages) | Cited 7 times

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The preferential nitrification of zirconium can be obtained as a result of cw CO2 laser heating in air in some specific conditions, followed by rapid cooling in a jet of high purity argon.
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81.05.Bx Metals, semimetals, and alloys
82.50.-m Photochemistry
79.20.Ds Laser-beam impact phenomena
68.55.-a Thin film structure and morphology

Image transmission and interferometry with multimode fibers using self‐pumped phase conjugation

Baruch Fischer and Shmuel Sternklar

Appl. Phys. Lett. 46, 113 (1985); http://dx.doi.org/10.1063/1.95703 (2 pages) | Cited 21 times

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A double‐pass image transmission through a single multimode fiber is demonstrated, using a passive phase conjugate mirror. An application to interferometry based on phase sensing is demonstrated, by implementing the multimode fiber and the passive phase conjugate mirror as one arm of a Michelson interferometer. Due to the unique properties of the self‐pumped conjugator, nonuniform distortions caused by modal dispersion in the fiber and other aberrations are cancelled out, while uniform phase changes are detected.
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42.81.-i Fiber optics
07.60.Ly Interferometers
42.30.Va Image forming and processing

Surface‐emitting GaInAsP/InP laser with low threshold current and high efficiency

Z. L. Liau and J. N. Walpole

Appl. Phys. Lett. 46, 115 (1985); http://dx.doi.org/10.1063/1.95704 (3 pages) | Cited 30 times

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A buried‐heterostructure laser has been developed whose output is deflected to a direction perpendicular to the substrate surface by a monolithically integrated 45° (parabolic) mirror. The latter is fabricated by smoothing a chemically etched multistep structure using a mass‐transport phenomenon. The present devices show threshold current as low as 12 mA, differential quantum efficiency as high as 47% and a surface‐emitting far‐field pattern with a main lobe as narrow as 12°.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
68.35.Md Surface thermodynamics, surface energies
42.60.By Design of specific laser systems

Accelerated aging of 100‐mW cw multiple‐stripe GaAlAs lasers grown by metalorganic chemical vapor deposition

G. L. Harnagel, T. L. Paoli, R. L. Thornton, R. D. Burnham, and D. L. Smith

Appl. Phys. Lett. 46, 118 (1985); http://dx.doi.org/10.1063/1.95705 (3 pages) | Cited 7 times

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Lifetime characteristics of multiple‐stripe, multi‐quantum‐well lasers operating in the 810‐nm wavelength region at 100 mW cw and heat sink temperatures of 30, 70, and 100 °C are reported. Three failure modes were identified as dark line defect formation during early burn‐in, gradual degradation at lower temperatures, and thermal resistance increases for long‐term, high‐temperature testing. Based upon gradual degradation data, the median operating life at 30 °C is projected to be 22 000 h, with a mean time to failure of 31 000 h. Actual extended life testing at 30 °C supports the validity of this projection.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

High external efficiency (36%) 5‐μm mesa isolated GaAs quantum well laser by organometallic vapor phase epitaxy

D. F. Welch, C. F. Schaus, and J. R. Shealy

Appl. Phys. Lett. 46, 121 (1985); http://dx.doi.org/10.1063/1.95706 (3 pages) | Cited 8 times

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High external power efficiencies of 36% are obtained from 5‐μm mesa isolated graded‐index separate‐confinement heterostructure single quantum well lasers grown by organometallic vapor phase epitaxy. Threshold currents of 21 mA are reported for a 5×96 μm cavity laser with differential quantum efficiencies of as high as 80% at 6 mW/facet. In addition, high facet power densities of 13 mW/μm are reported giving single ended output powers of 65 mW from 5‐μm uncoated facets. Even higher power densities of 20 mW/μm are observed for 1‐μm mesa stripe lasers before probe damage occurred.
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42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Gain measurements in InGaAsP multiquantum well lasers

N. K. Dutta, D. C. Craft, and S. G. Napholtz

Appl. Phys. Lett. 46, 123 (1985); http://dx.doi.org/10.1063/1.95707 (3 pages) | Cited 4 times

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This letter reports the polarization dependence and temperature dependence of gain spectrum in InGaAsP multiquantum well (MQW) lasers emitting at 13 μm. The gain of the TE mode is larger (by ∼40 cm−1) than that of the TM mode. The peak gain for the TM mode is shifted towards shorter wavelengths from that of the TE mode. This is because both light hole and heavy hole transitions contribute to TE emission whereas the TM emission is principally due to light hole transitions. The large gain difference between the TE and TM mode suggests that the occurrence of stress induced effects (e.g., light‐current kinks) may be reduced in MQW active layer lasers. The net gain G is found to vary linearly with the injection current I. The slope dG/dI of the gain‐current curve for these MQW lasers decreases with increasing temperature. However, the decrease is considerably smaller than that for conventional InGaAsP double heterostructure lasers. The smaller decrease is consistent with the observed lower temperature dependence of threshold (high T0) of the MQW lasers.
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42.55.Px Semiconductor lasers; laser diodes

Reduced dynamic linewidth in three‐terminal two‐section diode lasers

L. A. Coldren, G. D. Boyd, J. E. Bowers, and C. A. Burrus

Appl. Phys. Lett. 46, 125 (1985); http://dx.doi.org/10.1063/1.95708 (3 pages) | Cited 2 times

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The dynamic wavelength chirping observed in modulated semiconductor lasers can be reduced in three‐terminal coupled‐cavity structures by appropriately splitting the modulation signal to the two cavities. In a 1.3‐μm wavelength GaInAsP/InP cleaved‐coupled‐cavity laser, the 90% modulation‐depth linewidth was reduced to ∼0.2 Å for modulation frequencies up to 1.7 GHz.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.79.Hp Optical processors, correlators, and modulators
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optical switching in a CdHgTe étalon at room temperature

J. G. H. Mathew, D. Craig, and A. Miller

Appl. Phys. Lett. 46, 128 (1985); http://dx.doi.org/10.1063/1.95709 (3 pages) | Cited 5 times

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We report optical switching (dynamic optical bistability) in a 200‐μm‐thick, uncoated Cd0.23Hg0.77Te étalon at room temperature by two‐photon excitation with a short pulse CO2 laser at 10.6 μm.
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42.79.-e Optical elements, devices, and systems
42.65.-k Nonlinear optics
07.60.Ly Interferometers
42.25.Hz Interference

Very low threshold buried ridge structure lasers emitting at 1.3 μm grown by low pressure metalorganic chemical vapor deposition

M. Razeghi, R. Blondeau, K. Kazmierski, M. Krakowski, and J. P. Duchemin

Appl. Phys. Lett. 46, 131 (1985); http://dx.doi.org/10.1063/1.95710 (3 pages) | Cited 11 times

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GaInAsP‐InP buried ridge structure lasers emitting at 1.3 μm have been fabricated on material grown completely by low pressure metalorganic chemical vapor deposition. These lasers have low threshold (11 mA), exhibit linear (kink‐free) light‐current characteristics up to high powers (10 mW/facets), and can be operated at high temperatures (70 °C). Excellent uniformity over 10 cm2 has been obtained, and an external quantum efficiency of 60% for two faces has been measured.
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42.55.Px Semiconductor lasers; laser diodes

Operation of individual diode lasers as a coherent ensemble controlled by a spatial filter within an external cavity

R. H. Rediker, R. P. Schloss, and L. J. Van Ruyven

Appl. Phys. Lett. 46, 133 (1985); http://dx.doi.org/10.1063/1.95711 (3 pages) | Cited 25 times

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Five diode gain elements (diode lasers with one facet antireflection coated) have been controlled to operate coherently with each other by a spatial filter placed between the antireflection coated facet and the mirror of an external cavity which provides the feedback for laser operation. The locking of the lasers is relatively insensitive to phase adjustment in each laser path. Locking has occurred with lasers whose output wavelength when operating individually differed by 60 Å. It is expected that the maximum tolerance to wavelength difference is much larger because lasers used were selected so simple individual temperature control could bring them into wavelength coincidence. These results point to the feasibility of placing well over a thousand diode lasers in an external cavity with coherent output.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Phased arrays of buried‐ridge InP/InGaAsP diode lasers

E. Kapon, L. T. Lu, Z. Rav‐Noy, M. Yi, S. Margalit, and A. Yariv

Appl. Phys. Lett. 46, 136 (1985); http://dx.doi.org/10.1063/1.95921 (3 pages) | Cited 6 times

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Phase‐locked arrays of buried‐ridge InP/InGaAsP lasers, emitting at 1.3 μm, were grown by liquid phase epitaxy. The arrays consist of index‐guided, buried‐ridge lasers which are coupled via their evanescent optical fields. This index‐guided structure makes it possible to avoid the occurrence of lower gain in the interchannel regions. As a result, the buried‐ridge arrays oscillate mainly in the fundamental supermode, which yields single lobed, narrow far‐field patterns. Single lobed beams less than 4° in width were obtained from buried‐ridge InP/InGaAsP phased arrays up to more than twice the threshold current.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

New piezoelectric Ta2O5 thin films

Yasuhiko Nakagawa and Yasuo Gomi

Appl. Phys. Lett. 46, 139 (1985); http://dx.doi.org/10.1063/1.95712 (2 pages) | Cited 13 times

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Crystallized Ta2O5 thin films have been deposited on fused quartz substrates by reactive dc diode sputtering. Crystalline structures and piezoelectric properties of the films were investigated. The electromechanical coupling coefficient K2 of the surface acoustic waves was 0.5% for hk=1.0. This value is comparable to that for ZnO thin films.
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68.55.-a Thin film structure and morphology
77.65.-j Piezoelectricity and electromechanical effects
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.35.Pt Surface waves in solids and liquids

High accuracy noncontact laser‐optical method for measuring surface acoustic wave velocity and attenuation

J. I. Burov, K. P. Branzalov, and D. V. Ivanov

Appl. Phys. Lett. 46, 141 (1985); http://dx.doi.org/10.1063/1.95713 (2 pages) | Cited 3 times

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A high accuracy noncontact laser‐optical method for measuring surface acoustic wave (SAW) velocity and attenuation is described. The accuracy depends on the power of the two lasers, used for generation and probe of SAW and on bandwidth of the intensity modulation. The method is applicable to all acoustic materials including the nonpiezoelectrical ones.
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43.35.Pt Surface waves in solids and liquids
43.58.Dj Sound velocity
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
42.62.-b Laser applications

Low‐energy optical generation and detection of acoustic pulses in metals and nonmetals

E. Bourkoff and C. H. Palmer

Appl. Phys. Lett. 46, 143 (1985); http://dx.doi.org/10.1063/1.95714 (3 pages) | Cited 2 times

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Acoustic pulses have been generated in both metals and nonmetals using a low‐energy tunable dye laser emitting 6‐ns pulses with 20–210‐μJ energies. The acoustic waveforms have been detected optically with a calibrated laser interferometer having improved signal‐to‐noise ratio. In this fashion, noncontact characterization of nonmetallic, as well as metallic samples of small size, has been shown to be feasible, using a potentially portable system. In addition between the relationship acoustic signal level and incident laser energy (and power density) has been measured for a polyimide‐glass‐fiber composite material.
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43.58.Gn Acoustic impulse analyzers and measurements
07.60.Ly Interferometers
43.38.Zp Acoustooptic and photoacoustic transducers
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography

Growth of diamond thin films by electron assisted chemical vapor deposition

Atsuhito Sawabe and Tadao Inuzuka

Appl. Phys. Lett. 46, 146 (1985); http://dx.doi.org/10.1063/1.95715 (2 pages) | Cited 124 times

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Diamond thin films have been formed by the newly proposed electron assisted chemical vapor deposition on SiC with a high growth rate (3∼5 μm/h). The obtained films have good crystallinity in the sense of electron and x‐ray diffraction. Vicker’s hardness of the films is about 9000 kg/mm2. The influence of the electron bombardment on the initial island density on the substrate surface and on the decomposition of the reactant gases (CH4 and H2) is discussed relating to the growth process of the films.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Extended appearance‐potential fine structure of GaAs(001) surface

H. Terauchi, S. Sekimoto, N. Sano, H. Kato, and M. Nakayama

Appl. Phys. Lett. 46, 148 (1985); http://dx.doi.org/10.1063/1.95716 (2 pages) | Cited 3 times

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An extended appearance‐potential fine‐structure measurement of the As‐stable GaAs (001) surface has been carried out. The Ga‐As, As‐As distances of the surface were quantitatively determined for the first time. The surface structure is consistent with that proposed from results of the electron diffraction and photoemission measurements.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology
78.70.Dm X-ray absorption spectra
81.65.-b Surface treatments

Sequential observation of electromigration degradation in passivated Al stripes by interferometric optical scanning

A. Fortini, R. Bosmans, and J. Hamel

Appl. Phys. Lett. 46, 150 (1985); http://dx.doi.org/10.1063/1.95717 (3 pages)

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It is shown that geometrical damages resulting from electrotransport in passivated Al stripes can easily be observed, with a resolution of a few nanometers, by means of an interferometric optical set allowing for sequential recordings in processing.
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66.30.Fq Self-diffusion in metals, semimetals, and alloys
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
82.45.-h Electrochemistry and electrophoresis
07.60.Ly Interferometers

Radiometric crack detection in fast moving surfaces

Irving Kaufman and Ashish K. Choudhury

Appl. Phys. Lett. 46, 152 (1985); http://dx.doi.org/10.1063/1.95718 (3 pages) | Cited 1 time

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Cracks in the surfaces of metal shafts rotating up to 3200 rpm were detected by passive, radiometric sensing of the 8–12‐μm thermal radiation emitted. This detection is possible because the effective crack emissivity approaches that of a black body, while the metal itself has a much lower emissivity. By the use of signal storage and signal subtraction, the technique is expected to permit ‘‘on‐line’’ monitoring of the development of cracks, even in the presence of surface blemishes.
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62.20.M- Structural failure of materials
81.70.-q Methods of materials testing and analysis
46.50.+a Fracture mechanics, fatigue and cracks
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Low‐temperature ion beam mixing of Pt and Si markers in Ge

Sung‐Joon Kim, M‐A. Nicolet, R. S. Averback, and P. Baldo

Appl. Phys. Lett. 46, 154 (1985); http://dx.doi.org/10.1063/1.95719 (3 pages) | Cited 5 times

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The mixing of Pt and Si marker atoms in Ge during 750‐keV Xe irradiation was measured at temperatures between 6 and 500 K. The low‐temperature measurements show that the mixing parameter for Pt is nearly twice that for Si. This result is in strong contradiction to the collisional theory of ion beam mixing. A weak temperature dependence in the mixing is found for both markers.
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61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities
64.75.-g Phase equilibria

Lateral photodetectors on semi‐insulating InGaAs and InP

V. Diadiuk and S. H. Groves

Appl. Phys. Lett. 46, 157 (1985); http://dx.doi.org/10.1063/1.95720 (2 pages) | Cited 12 times

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A new type of high‐performance lateral PIN photodector has been formed by alloying p‐type and n‐type metallic contacts onto semi‐insulating InGaAs or InP without a separate junction fabrication step. Low dark current (<1 nA), high external quantum efficiency (40% at λ=1.24 μm, without antireflection coating), and high speed (full width at half‐maximum <50 ps) have been obtained with reverse bias of 10 V. These characteristics, plus the simplicity of fabrication and the planar lateral configuration, make these devices attractive for monolithic integration with field‐effect transistors and for photodetector arrays.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.40.+w Photoconduction and photovoltaic effects
85.30.Tv Field effect devices

Space‐charge‐like scattering in epitaxial GaAs from low temperature and high pressure Hall measurements

A. K. Saxena, A. K. Sinha, and A. R. Adams

Appl. Phys. Lett. 46, 159 (1985); http://dx.doi.org/10.1063/1.95721 (3 pages) | Cited 4 times

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The Hall electron mobility in GaAs grown by vapor phase epitaxy (VPE), liquid phase epitaxy (LPE), molecular beam epitaxy (MBE), and metalorganic chemical vapor deposition (MOCVD) has been studied both as a function of temperature (77<T<300 K) and hydrostatic pressure (0–8 kbar). The analysis of the data shows that in LPE and VPE crystals, the mobilities are lowered due to space‐charge scattering (μSC∝m@B|−1/2T−1/2) while in MOCVD and MBE samples, a space‐charge‐like limited mobility (μUN∝m∗−nT−1/2) must be included. The value of the exponent n has been found to be 1 for MBE and 2 for MOCVD grown samples. It has been concluded that increasing impurity gradation in these layers is responsible for higher values of n. The pressure coefficient of electron mass in GaAs is determined to be 5.2×10m−4 m@B|/kbar . The model of central cell scattering due to carbon acceptors fails to account for the experimental data reported in this paper.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.20.Dp General theory, scattering mechanisms
72.20.Pa Thermoelectric and thermomagnetic effects
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)

Shallow beryllium implantation in GaAs annealed by rapid thermal annealing

P. Chambon, M. Berth, and B. Prévot

Appl. Phys. Lett. 46, 162 (1985); http://dx.doi.org/10.1063/1.95722 (3 pages) | Cited 7 times

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Very shallow (40 nm) ion implants of Be in GaAs have been annealed with no noticeable redistribution using rapid thermal annealing (RTA). Differential Hall effect measurements, Raman Scattering, and spectroscopic ellipsometry have shown that a peak concentration of 3×1019 cm−3 is achieved, with an electrical activation of 80% and crystalline quality similar to unimplanted material. These results are interpreted in terms of diffusing (interstitial) atoms gettered by defects not yet annealed when electrical activation occurs in the RTA process.
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61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

High efficiency indium tin oxide/indium phosphide solar cells

T. J. Coutts and S. Naseem

Appl. Phys. Lett. 46, 164 (1985); http://dx.doi.org/10.1063/1.95723 (3 pages) | Cited 35 times

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Solar cells have been fabricated by rf sputter depositing indium tin oxide onto single crystal p‐type indium phosphide. Four different substrate doping densities have been used but in all cases the dopant was zinc and the wafers were 〈100〉 oriented. The optimum doping density from the range studied was 3×1016 cm−3 and devices based on such substrates have yielded total area efficiencies up to 16.2% using the air mass 1.5 spectrum normalized to 100 mW cm−2, which correspond to active area efficiencies of 19.1%. A doping density less than the optimum yielded devices with excessive series resistance. Higher doping densities led to a marked loss of red response.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
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