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15 Feb 1985

Volume 46, Issue 4, pp. 317-448

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Fiber‐optic logic gate

Ken‐ichi Kitayama, Yasuo Kimura, and Shigeyuki Seikai

Appl. Phys. Lett. 46, 317 (1985); http://dx.doi.org/10.1063/1.95615 (3 pages) | Cited 22 times

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Operation of a fiber‐optic logic gate is demonstrated for the first time. The principle of operation is based upon the intensity‐dependent polarization rotation in birefringent fibers. Using a birefringent fiber combined with polarizers in the crossed state, the ON/OFF state of an AND operation is clearly observed with an extinction ratio of approximately 10 dB. The fiber‐optic logic gate would be a promising device for optical information processing in the future because of the feasibility of compact configuration and very fast‐speed operation.
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42.81.-i Fiber optics
42.25.Ja Polarization
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

High output power characteristics in broad‐channeled substrate inner stripe lasers

S. Yamamoto, N. Miyauchi, S. Maei, T. Morimoto, O. Yamamoto, S. Yano, and T. Hijikata

Appl. Phys. Lett. 46, 319 (1985); http://dx.doi.org/10.1063/1.95616 (3 pages) | Cited 3 times

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A high output power AlGaAs laser is newly developed in the spectral range of 770–780 nm. The laser has a double‐depth channel on the p‐GaAs substrate which forms a built‐in optical waveguide having a double effective refractive index/loss step. This novel waveguide is effective to make the fundamental lateral mode extremely stable; that is, up to 60 mW when the reflectivity of the front facet (Rf) is 0.12, and 100 mW when Rf is 0.04. cw threshold currents are 35–45 mA and external differential efficiencies are 0.6–0.8 mW/mA. Also, an astigmatic distance below 3 μm is obtained when Rf is more than 0.10.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers

High efficiency microwave discharge XeCl laser

C. P. Christensen, R. W. Waynant, and B. J. Feldman

Appl. Phys. Lett. 46, 321 (1985); http://dx.doi.org/10.1063/1.95617 (3 pages) | Cited 13 times

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Efficiency of a microwave discharge XeCl laser exceeding 1% is demonstrated, an increase of more than one order of magnitude over previously reported values. Laser pulse durations of 320 ns are also reported.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

A high‐frequency surface wave pumped He‐Ne laser

C. Moutoulas, M. Moisan, L. Bertrand, J. Hubert, J. L. Lachambre, and A. Ricard

Appl. Phys. Lett. 46, 323 (1985); http://dx.doi.org/10.1063/1.95618 (3 pages) | Cited 17 times

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A new electrodeless He‐Ne laser using a plasma produced by an electromagnetic surface wave as the active medium is described. Gain measurements are reported as a function of the pump wave frequency from 200 to 915 MHz. The dependence of laser performance on the gas mixture and pressure is also presented.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Pi High-frequency and RF discharges
52.80.Yr Discharges for spectral sources (including inductively coupled plasma)
32.70.Fw Absolute and relative intensities

Direct modulation and active mode locking of ultrahigh speed GaAlAs lasers at frequencies up to 18 GHz

K. Y. Lau and A. Yariv

Appl. Phys. Lett. 46, 326 (1985); http://dx.doi.org/10.1063/1.95619 (3 pages) | Cited 9 times

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It is demonstrated that an ultrahigh speed window buried heterostructure GaAlAs laser fabricated on a semi‐insulating substrate can be used as a narrowband signal transmitter in the Ku band frequency range (12–20 GHz). The modulation efficiency can be increased over a limited bandwidth by a weak optical feedback. A stronger optical feedback enables one to actively mode lock the laser diode at a very high repetition rate up to 17.5 GHz, producing pulses ∼12 ps long.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Cd diffused mesa‐substrate buried heterostructure InGaAsP/InP laser

M. B. Yi, L. T. Lu, E. Kapon, Z. Rav‐Noy, S. Margalit, and A. Yariv

Appl. Phys. Lett. 46, 328 (1985); http://dx.doi.org/10.1063/1.95620 (3 pages)

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A new type of buried heterostructure InGaAsP/InP lasers grown by a single‐step liquid phase epitaxy on Cd diffused mesa substrate is described. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 15 mA are achieved for a laser with a 2‐μm‐wide active region.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Optical bistability in bulk ZnSe due to increasing absorption and self‐focusing

M. R. Taghizadeh, I. Janossy, and S. D. Smith

Appl. Phys. Lett. 46, 331 (1985); http://dx.doi.org/10.1063/1.95621 (3 pages) | Cited 26 times

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We report the first observation of cavityless optical bistability in ZnSe. A shift in the band edge and self‐focusing occurs due to the temperature rise of the material as the laser irradiance is increased. These two mechanisms are believed to provide the feedback necessary for bistable operation.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Room‐temperature 1.3‐μm optical time domain reflectometer using a photon counting InGaAs/InP avalanche detector

B. F. Levine, C. G. Bethea, and J. C. Campbell

Appl. Phys. Lett. 46, 333 (1985); http://dx.doi.org/10.1063/1.95622 (3 pages) | Cited 18 times

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We demonstrate the first room‐temperature photon counting optical time domain reflectometer at λ=1.3 μm. A high sensitivity (10−14 W) equal to that of a Ge avalanche diode cooled to 77 K has been realized.
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07.60.Hv Refractometers and reflectometers
42.50.-p Quantum optics
42.81.-i Fiber optics
85.60.Dw Photodiodes; phototransistors; photoresistors

Magnetically induced pulser laser excitation

R. S. Taylor and K. E. Leopold

Appl. Phys. Lett. 46, 335 (1985); http://dx.doi.org/10.1063/1.95623 (3 pages) | Cited 31 times

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A novel excitation scheme has been developed for excimer discharge lasers. The technique uses pulse transformer technology to induce a fast, high voltage pulse directly onto a ground potential laser electrode resulting in the breakdown of the laser gas mix. Saturation of the pulse transformer core inductance then permits efficient energy transfer from the main energy storage circuit into the discharge. When this excitation technique was used in a XeCl laser an output energy density of 2.5 J/l and an overall electrical to optical efficiency of 2% were obtained. The technique appears promising for the development of high energy, high average power excimer lasers.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
52.80.Yr Discharges for spectral sources (including inductively coupled plasma)
07.55.Db Generation of magnetic fields; magnets
85.70.-w Magnetic devices

Nonlinear single‐mode fiber coupler using liquid crystals

E. S. Goldburt and P. St. J. Russell

Appl. Phys. Lett. 46, 338 (1985); http://dx.doi.org/10.1063/1.95624 (3 pages) | Cited 18 times

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The operation of a new nonlinear optical waveguide coupler, fabricated in single‐mode fibers and using a liquid crystal as the nonlinear medium, is described. Strongly intensity‐dependent coupling and associated bistability are observed to occur in the intensities of the light in the uncoupled and coupled fibers, plotted as a function of the intensity in the input fiber. The effects of applying a dc electric field are also reported. Criteria for the development of liquid crystals suitable for the construction of various types of nonlinear optical devices in single‐mode optical fibers are proposed.
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42.81.-i Fiber optics
42.79.Gn Optical waveguides and couplers
42.65.-k Nonlinear optics
78.20.Jq Electro-optical effects

Electro‐optic phase‐sensitive detection of optical emission and scattering

Azriel Z. Genack

Appl. Phys. Lett. 46, 341 (1985); http://dx.doi.org/10.1063/1.95917 (3 pages)

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Phase‐sensitive detection of emission and scattering excited by an intensity modulated laser is achieved using electro‐optic demodulation. This method can enhance the frequency range of fluorometric measurements since the response of a sample to light modulated at high frequencies can be measured utilizing only the dc output of the optical detector. Phase resolution is demonstrated by the separation of Raman scattering, which is in phase with the modulated laser, from fluorescence which lags the excitation in phase. Using 30‐MHz modulation and multichannel detection, fluorescence‐free Raman spectra of toluene are obtained in the presence of intense fluorescence from dissolved fluorol which has a lifetime of 8.5 ns.
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07.60.Rd Visible and ultraviolet spectrometers
78.30.C- Liquids
78.20.Jq Electro-optical effects
07.60.-j Optical instruments and equipment

12.5‐GHz direct modulation bandwidth of vapor phase regrown 1.3‐μm InGaAsP buried heterostructure lasers

C. B. Su, V. Lanzisera, W. Powazinik, E. Meland, R. Olshansky, and R. B. Lauer

Appl. Phys. Lett. 46, 344 (1985); http://dx.doi.org/10.1063/1.95625 (3 pages) | Cited 12 times

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A small‐signal modulation bandwidth of 12.5 GHz is reported for vapor phase regrown 1.3‐μm InGaAsP buried heterostructure (BH) lasers operated at a bias optical power of only 6.9 mW/facet. The bandwidth per square root of bias optical power is a factor of 1.6 higher than previous best results. In addition, the optical modulation amplitude remains flat to 12 GHz in sharp contrast to other types of BH lasers which exhibit signal roll‐off at frequencies below the resonance frequency. The wide modulation bandwidth is attained by increasing the  p‐doping level in the active region and by the choice of short cavity length. The device is grown on a conductive substrate, indicating that it is unnecessary to use a semi‐insulating substrate to obtain flat optical response in vapor phase regrown BH lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.30.De Semiconductor-device characterization, design, and modeling

Nondestructive detection of Rayleigh wave dispersion in beryllium

R. D. Weglein and J. E. Hanafee

Appl. Phys. Lett. 46, 347 (1985); http://dx.doi.org/10.1063/1.95626 (3 pages) | Cited 5 times

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The presence of machining damage (MD) in beryllium may be determined nondestructively in the acoustic microscope via the acoustic material signature (AMS). Rayleigh wave dispersion is attributed to substantial modification of the macroelastic properties in the surface region due to the machining process. Comparison of acoustic material signatures at 35 MHz obtained from chemically etched (undamaged) and machining‐damaged (MD) specimens show substantial (3%) Rayleigh velocity reduction in the latter. Damage variation with depth may be ascertained via AMS mesurements over a wide frequency range.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
62.30.+d Mechanical and elastic waves; vibrations
81.70.-q Methods of materials testing and analysis
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Heavy ion beam probe measurement of local electron heating in the Elmo Bumpy Torus

F. M. Bieniosek and K. A. Connor

Appl. Phys. Lett. 46, 350 (1985); http://dx.doi.org/10.1063/1.95627 (3 pages) | Cited 1 time

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Measurements of the abundance of multiply charged ionization products from a heavy ion beam probing beam have been used as a spatially resolved plasma diagnostic on Elmo Bumpy Torus. Radial profile measurements demonstrate that two classes of electrons are present: those that communicate toroidally to form the core plasma and those that are mirror trapped and depend on local heating (particularly ω=2Ωce) for their existence. Both types show a systematic dependence on resonant heating locations.
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52.70.Nc Particle measurements
52.50.Gj Plasma heating by particle beams
52.40.Mj Particle beam interactions in plasmas
52.55.Jd Magnetic mirrors, gas dynamic traps

Optogalvanic measurements of gas temperature in the cathode fall

D. K. Doughty, E. A. Den Hartog, and J. E. Lawler

Appl. Phys. Lett. 46, 352 (1985); http://dx.doi.org/10.1063/1.95628 (3 pages) | Cited 19 times

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Optogalvanic diagnostics are used to determine the electric field and the absolute gas temperature as a function of position in the cathode fall of an abnormal glow discharge. Gas temperatures in the cathode fall at modest current densities are as much as a factor of 2 above ambient temperatures. Symmetric charge exchange of energetic positive ions produces fast neutrals which efficiently heat gas in the cathode fall. This hot, rarefied gas has important implications in modeling the cathode fall, sputtering processes at the cathode, the glow‐to‐arc transition, and other phenomena.
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52.80.Hc Glow; corona
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
51.70.+f Optical and dielectric properties
51.30.+i Thermodynamic properties, equations of state

Lateral transport of hot electrons on a spherical target by 10.6‐μm CO2 laser irradiation

K. Terai, H. Daido, M. Fujita, F. Miki, S. Nakai, and C. Yamanaka

Appl. Phys. Lett. 46, 355 (1985); http://dx.doi.org/10.1063/1.95629 (3 pages) | Cited 7 times

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Lateral transport of hot electrons on a spherical target irradiated with two beams of CO2 laser (4.8×1014 W/cm2) is studied by spatially resolved Kα x‐ray measurements. The hot‐electron energy and spatial distribution in the target are found to depend on the method of irradiation: tight and overlapped focusing conditions.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
79.20.Ds Laser-beam impact phenomena

Channeling of ions near the silicon 〈001〉 axis

J. F. Ziegler and R. F. Lever

Appl. Phys. Lett. 46, 358 (1985); http://dx.doi.org/10.1063/1.95630 (3 pages) | Cited 11 times

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The first experimental mapping of ion beam channels near the Si 〈001〉 axis is reported. All features are identified by theoretical plots of silicon planar channels and axial channels.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Study of the kinetics and mechanism of the thermal nitridation of SiO2

R. P. Vasquez, A. Madhukar, F. J. Grunthaner, and M. L. Naiman

Appl. Phys. Lett. 46, 361 (1985); http://dx.doi.org/10.1063/1.95631 (3 pages) | Cited 15 times

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X‐ray photoelectron spectroscopy (XPS) has been used to study the nitridation time and temperature dependence of the nitrogen distribution in thermally nitrided SiO2 films. The XPS data show that the maximum nitrogen concentration near the (SiOxNy)/Si interface is initially at the interface, but moves 20–25 Å away from the interface with increasing nitridation time. Computer modeling of the kinetic processes involved is carried out and reveals a mechanism in which diffusing species, initially consisting primarily of nitrogen, react with the substrate, followed by formation of the oxygen‐rich oxynitride due to reaction of the diffusing oxygen displaced by the slower nitridation of the SiO2. The data are consistent with this mechanism provided the influence of the interfacial strain on the nitridation and oxidation kinetics is explicitly accounted for.
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77.55.-g Dielectric thin films
82.20.Wt Computational modeling; simulation
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Local oxygen diffusion induced in Ca‐doped yttrium iron garnet films by laser annealing

B. Antonini, P. Paroli, and C. Salustri

Appl. Phys. Lett. 46, 363 (1985); http://dx.doi.org/10.1063/1.95632 (3 pages)

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Local inward and outward oxygen diffusion induced in Ca‐doped yttrium iron garnet films by laser annealing in controlled atmospheres is reported for the first time. This allows changing locally and reversibly the concentration of Fe4+ ions, which control the electrical and infrared optical properties of the material. The effects of laser annealing were investigated by measuring in the irradiated regions the optical absorption and the magnetic circular dichroism in the near infrared. The possibility of small scale maskless treatments and the short times involved make this technique interesting for several device applications.
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66.30.J- Diffusion of impurities
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Ds Laser-beam impact phenomena
75.20.Ck Nonmetals

Temporally resolved imaging of silicon surfaces melted with intense picosecond 1‐μm laser pulses

Ian W. Boyd, Steven C. Moss, Thomas F. Boggess, and Arthur L. Smirl

Appl. Phys. Lett. 46, 366 (1985); http://dx.doi.org/10.1063/1.95633 (3 pages) | Cited 6 times

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The reflectivity of crystalline silicon irradiated by intense 46‐ps pulses at 1 μm has been measured using an optical pump‐probe technique and also by imaging the irradiated sample surface on to a vidicon. We clearly resolve dramatic fluence‐dependent reflectivity changes across the profile of the melted region that are consistent with rapid melting within the pulse duration and the formation of a superheated liquid layer.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
79.20.Ds Laser-beam impact phenomena
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
64.70.D- Solid-liquid transitions

Low spin density amorphous hydrogenated germanium prepared by homogeneous chemical vapor deposition

J. A. Reimer, B. A. Scott, D. J. Wolford, and J. Nijs

Appl. Phys. Lett. 46, 369 (1985); http://dx.doi.org/10.1063/1.95634 (3 pages) | Cited 7 times

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Structural [nuclear magnetic and electron spin resonance (ESR), infrared spectroscopy], optical (absorption, photoacoustic, photoluminescence), and electrical data are presented for amorphous hydrogenated germanium (a‐Ge:H) prepared by homogeneous chemical vapor deposition (HOMOCVD). Like HOMOCVD prepared amorphous hydrogenated silicon, these a‐Ge:H materials exhibit very low ESR spin densities and systematically varying optical gaps and hydrogen contents. Nevertheless, the material displays no subband gap photoluminescence and minimal photoconductivity, suggesting that a spinless defect may ultimately limit the device application of all types of a‐Ge:H and a‐(Ge,Si):H films.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology
75.20.Ck Nonmetals
78.40.Fy Semiconductors

Transmission electron microscopy of liquid phase epitaxial Hg1−xCdxTe layers on CdTe substrates

Susan Wood, J. Greggi, and W. J. Takei

Appl. Phys. Lett. 46, 371 (1985); http://dx.doi.org/10.1063/1.95635 (3 pages) | Cited 2 times

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Epitaxial Hg1−xCdxTe films were grown on (111)A CdTe substrates by the tellurium solvent, horizontal tube slider liquid phase epitaxy technique. Their microstructures were subsequently investigated by both planar and cross‐sectional transmission electron microscopy (TEM). Planar TEM showed the top surface of the films to be precipitate free with a general dislocation density <106/cm2 except for localized regions containing high dislocation densities associated with linear surface features on the Hg1−xCdxTe. Cross‐sectional TEM showed the interface region to be nonplanar due to meltback during epilayer growth. A three‐dimensional dislocation structure was confined to a band in the interface region having a graded Hg composition.
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68.55.-a Thin film structure and morphology
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Carrier trapping in room‐temperature, time‐resolved photoluminescence of a GaAs/AlxGa1−xAs multiple quantum well structure grown by metalorganic chemical vapor deposition

J. E. Fouquet, A. E. Siegman, R. D. Burnham, and T. L. Paoli

Appl. Phys. Lett. 46, 374 (1985); http://dx.doi.org/10.1063/1.95636 (3 pages) | Cited 15 times

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The time decay of the room‐temperature photoluminescence from the n=1 transition in a multiple quantum well structure grown by metalorganic chemical vapor deposition is observed to depend strongly on excitation energy density. For low excitation (0.2 μJ/cm2) an exponential 3‐ns decay is observed, while for high excitation (120 μJ/cm2) the decay lengthens to 45 ns. In the case of higher excitation, the photoluminescence decay rate is observed to increase after excitation and initial decay. The excitation energy dependence of the initial decay can be explained by saturation of carrier traps, and the later speedup of photoluminescence decay can be explained by the release of carriers from the traps and subsequent refilling. Time‐integrated photoluminescence data qualitatively support the trapping interpretation. This is the first report, to the best of our knowledge, of time‐resolved photoluminescence in a metalorganic chemical vapor deposition grown GaAs/AlxGa1−x As quantum well structure.
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78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Determination of the conduction‐band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance‐voltage measurements

H. Okumura, S. Misawa, S. Yoshida, and S. Gonda

Appl. Phys. Lett. 46, 377 (1985); http://dx.doi.org/10.1063/1.95637 (3 pages) | Cited 71 times

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The relation between the conduction‐band discontinuity ΔEc and the Al composition x of refined GaAs/AsxGa1−xAs (x<0.42) heterointerfaces was determined by means of capacitance‐voltage measurements. The resulting relation, ΔEc=0.67ΔEg, is different from Dingle’s rule. The interface charge density σ of a series of the samples was also investigated in relation to the reliability of the determination of ΔEc. It was found that σ less than 1×1011/cm2 is required to determine ΔEc with the precision of ±10 meV.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

2‐Gb/s sensitivity of a Ga0.47In0.53As photoconductive detector/GaAs field‐effect transistor hybrid photoreceiver

C. Y. Chen, B. L. Kasper, H. M. Cox, and J. K. Plourde

Appl. Phys. Lett. 46, 379 (1985); http://dx.doi.org/10.1063/1.95638 (3 pages) | Cited 4 times

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We have measured the 2‐Gb/s sensitivity of a photoreceiver consisting of a Ga0.47In0.53As photoconductive detector and a GaAs low‐noise field‐effect transistor. For a bit error rate of 10−9, the photoconductive receiver shows a sensitivity of −28.8 dBm at 2 Gb/s and 1.51 μm. In view of its high receiver sensitivity and simplicity, the Ga0.47In0.53As photoconductive detector may be attractive for applications in high data rate lightwave communication systems, particularly local area networks.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.Tv Field effect devices
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
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