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15 Feb 1985

Volume 46, Issue 4, pp. 317-448

Page 2 of 3 Pages Previous Page Next Page | Jump to Page

1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy

H. Ennen, G. Pomrenke, A. Axmann, K. Eisele, W. Haydl, and J. Schneider

Appl. Phys. Lett. 46, 381 (1985); http://dx.doi.org/10.1063/1.95639 (3 pages) | Cited 205 times

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The feasibility of producing erbium‐doped silicon light‐emitting diodes by molecular beam epitaxy is demonstrated. The p‐n junctions are formed by growing an erbium‐doped p‐type epitaxial silicon layer on an n‐type silicon substrate. When the diodes are biased in the forward direction at 77 K they show an intense sharply structured electroluminescence spectrum at 1.54 μm. This luminescence is assigned to the internal 4f–4f transition 4I13/2→4I15/2 of Er3+ (4f11).
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78.60.Fi Electroluminescence
61.72.U- Doping and impurity implantation
85.60.Jb Light-emitting devices
68.55.-a Thin film structure and morphology

p‐n junction formation in InSb and InAs1−xSbx by metalorganic chemical vapor deposition

P. K. Chiang and S. M. Bedair

Appl. Phys. Lett. 46, 383 (1985); http://dx.doi.org/10.1063/1.95640 (3 pages) | Cited 45 times

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p‐n junctions have been fabricated in InSb and InAs1−xSbx (0.4<x<0.7) using metalorganic chemical vapor deposition. These junctions showed soft breakdown in addition to forward characteristics with a diode factor greater than 2. The ternary alloy has a cut‐off wavelength in the 8–11‐μm range, thus providing a potential material system for detectors covering the 8–12‐μm range.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.60.Gz Photodetectors (including infrared and CCD detectors)
75.20.Ck Nonmetals

Dominant intrinsic‐exciton related luminescence from ZnSe grown by molecular beam epitaxy

R. M. Park, H. A. Mar, and N. M. Salansky

Appl. Phys. Lett. 46, 386 (1985); http://dx.doi.org/10.1063/1.95641 (2 pages) | Cited 11 times

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ZnSe layers were grown by molecular beam epitaxy onto (100) oriented GaAs substrates using various incident Zn/Se flux ratios. Substrate temperatures were varied over the range 300–400 °C while the layer growth rate was maintained at about 0.1 μm/h. 4.2‐K photoluminescence (PL) spectra were recorded from 0.5‐μm‐thick ZnSe layers using the 365‐nm line from a Hg(Xe) lamp (25‐mW/cm2 power density). ZnSe layers which are judged to have been grown under near‐stoichiometric growth conditions exhibited dominant intrinsic‐exciton related luminescence. A narrow peak at 2.8008 eV dominated the 4.2‐K PL spectra obtained from these layers. In addition, we also observed two unreported peaks in the ZnSe excitonic range which we term X at 2.8061 eV and Y at 2.8050 eV. These peaks are as yet unassigned.
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78.40.Fy Semiconductors
68.55.-a Thin film structure and morphology
71.35.-y Excitons and related phenomena

Spectral sensitivity of resist by x‐ray excited ion mass analysis

Kozo Mochiji, Takeshi Kimura, and Hidehito Obayashi

Appl. Phys. Lett. 46, 387 (1985); http://dx.doi.org/10.1063/1.95642 (3 pages)

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A measurement technique of spectral sensitivity for x‐ray resist is developed. Sensitivity is evaluated from the yield of gaseous fragment of resist during exposure to monochromatized synchrotron radiation. Using this technique named x‐ray excited ion mass analysis, the spectral sensitivity of x‐ray resist, poly‐2‐methylpentene‐1‐sulfone, is evaluated. The sensitivity is found to be enhanced at shorter wavelengths despite a low absorption coefficient. This measurement technique promises to improve the spectral sensitivity analysis in the soft x‐ray region.
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82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
82.80.Dx Analytical methods involving electronic spectroscopy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
33.20.Rm X-ray spectra
78.70.Dm X-ray absorption spectra

Monolithic integration of a pin photodiode and a field‐effect transistor using a new fabrication technique—graded step process

S. Miura, H. Machida, O. Wada, K. Nakai, and T. Sakurai

Appl. Phys. Lett. 46, 389 (1985); http://dx.doi.org/10.1063/1.95587 (3 pages) | Cited 8 times

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A new fabrication technique of optoelectronic integrated circuit’s (OEIC’s), the graded step process, has been developed and found to improve the photolithographic yield and the overall process reproducibility. By applying this technique, a laterally integrated pin photodiode/field‐effect transistor has been fabricated and shown to exhibit a high‐speed response and a high sensitivity. This result indicates the potential of this process for applications to larger scale OEIC’s.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Tv Field effect devices
42.82.-m Integrated optics

Oxygen distribution in a horizontal Bridgman‐grown, semi‐insulating GaAs ingot

Koji Shikano, Kenji Kobayashi, and Shintaro Miyazawa

Appl. Phys. Lett. 46, 391 (1985); http://dx.doi.org/10.1063/1.95588 (3 pages) | Cited 8 times

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Oxygen concentration in a horizontal Bridgman‐grown, chromium and oxygen‐doped, semi‐insulating GaAs ingot was analyzed using charged particle activation analysis. The oxygen concentration ranged from 2.0×1015 at seed end to 7.2×1015 cm−3 at tail end. The change of oxygen concentration measured along the length of ingot was in accordance with the normal‐freeze equation. The effective distribution coefficient of oxygen was estimated to be 0.39.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
82.80.Jp Activation analysis and other radiochemical methods

Dispersive thermal carrier generation in amorphous SeTe alloys

M. Abkowitz, G. M. T. Foley, J. M. Markovics, and A. C. Palumbo

Appl. Phys. Lett. 46, 393 (1985); http://dx.doi.org/10.1063/1.95589 (3 pages) | Cited 8 times

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The dark decay of open circuit surface voltage on a series of capacity charged amorphous Se:Te films is analyzed. It is demonstrated that dark decay is controlled by thermal emission from discrete states deep in the mobility gap. The rate of dark decay and the shape of the dark decay function dV/dt vs t vary with alloy composition. This composition induced variation in the thermal emission process is demonstrated to exhibit experimental features analogous to those which characterize dispersive transport.
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72.80.Ng Disordered solids
71.23.-k Electronic structure of disordered solids
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

High speed, ion bombarded InGaAs photoconductors

P. M. Downey, R. J. Martin, R. E. Nahory, and O. G. Lorimor

Appl. Phys. Lett. 46, 396 (1985); http://dx.doi.org/10.1063/1.95590 (3 pages) | Cited 19 times

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Studies of the performance of n‐InGaAs photoconductive detectors before and after the introduction of recombination sites via ion bombardment are described. An empirical relation between speed of response and bombardment dose by Be ions is established for this material, demonstrating that the response time can be controllably reduced by more than two orders of magnitude below the few nanosecond time which is characteristic of undamaged devices. In this same radiation dose range only moderate mobility deterioration is observed. Greater than unity photoconductive gain is demonstrated for large size (15 μm) devices with a 1/e response time of 400 ps.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Metalorganic growth of CdTe and HgCdTe epitaxial films at a reduced substrate temperature using diisopropyltelluride

W. E. Hoke and P. J. Lemonias

Appl. Phys. Lett. 46, 398 (1985); http://dx.doi.org/10.1063/1.95591 (3 pages) | Cited 33 times

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Epitaxial films of CdTe and HgCdTe have been grown using a new metalorganic compound, diisopropyltelluride. Diisopropyltelluride is found to be less stable than the conventionally used diethyltelluride and consequently makes possible HgCdTe growth at a lower substrate temperature. Specular CdTe and HgCdTe epitaxial films have been obtained with moderate growth rates at substrate temperatures as low as 350 °C. Preliminary infrared and Hall measurements are encouraging for the application of this compound for HgCdTe growth. The reduced stability of diisopropyltelluride compared to diethyltelluride is consistent with a stability model for branched hydrocarbon molecules.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
75.20.Ck Nonmetals

Electrical transport properties of tungsten silicide thin films

B. Z. Li and R. G. Aitken

Appl. Phys. Lett. 46, 401 (1985); http://dx.doi.org/10.1063/1.95592 (3 pages) | Cited 10 times

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The electrical transport properties of cosputtered tungsten silicide films were investigated. The microstructure of the annealed film was determined by x‐ray diffraction. Both resistivity and Hall coefficients for the WSi2 films were measured in the temperature range 80–300 K. The current carriers in tungsten disilicide were found to be positive holes. The carrier concentration determined from this experiment is ∼1×1022 cm−3 which does not change with either annealing process or measuring temperature. The resistivity of the WSi2 film in the measured temperature range increases approximately linearly with temperature. The carrier mobility and its temperature dependence were also studied.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology

Extension of long wavelength response by modulation doping in extrinsic germanium infrared detectors

V. Hadek, J. Farhoomand, C. A. Beichman, D. M. Watson, and M. D. Jack

Appl. Phys. Lett. 46, 403 (1985); http://dx.doi.org/10.1063/1.95593 (3 pages) | Cited 6 times

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We have investigated a new concept for infrared detectors based on multilayer epitaxy and modulation doping. This permits a high doping concentration and lower excitation energy in the photodetecting layer as is necessary for longer wavelength response, without incurring the detrimental effects of increased dark current and noise as would be the case with conventional detector designs. Germanium photodetectors using conventional materials and designs have a long wavelength cutoff in the infrared at 138 μm, which can only be extended through the inconvenient application of mechanical stress or magnetic fields. As a result of this approach which we arrived at from theoretical considerations and subsequently demonstrated experimentally, the long wavelength cutoff for germanium extrinsic detectors was extended beyond 200 μm, as determined by direct infrared optical measurements.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Measurement of mobility‐lifetime product in hydrogenated amorphous silicon p‐i‐n type diodes

R. Könenkamp, A. M. Hermann, and A. Madan

Appl. Phys. Lett. 46, 405 (1985); http://dx.doi.org/10.1063/1.95594 (3 pages) | Cited 10 times

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We have applied the junction recovery technique to different configurations of hydrogenated amorphous silicon type diodes and show that the recovered charge consists predominantly of holes. The technique is used for the measurement of the mobility‐lifetime product for recombination, which was found to be dependent upon the level and type of doping.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance
85.30.Kk Junction diodes

Molecular beam epitaxy of GaSb0.5As0.5 and AlxGa1−xSbyAs1−y lattice matched to InP

T. H. Chiu, W. T. Tsang, S. N. G. Chu, J. Shah, and J. A. Ditzenberger

Appl. Phys. Lett. 46, 408 (1985); http://dx.doi.org/10.1063/1.95595 (3 pages) | Cited 27 times

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Single crystal films of GaSby As1−y and Alx Ga1−x Sby As1−y alloys having compositions within the miscibility gap can be prepared using nonequilibrium growth techniques. We have successfully grown these alloys lattice matched to InP by molecular beam epitaxy. Transmission electron microscopy studies of these alloys grown on (100) InP at 500–560 °C show evidence of compositional modulation due to spinodal decomposition similar to that of InGaAsP grown by vapor phase epitaxy on InP used for laser diodes emitting at ∼1.5 μm. From the studies of optical microscopy, x‐ray diffraction, and photoluminescence measurements at both room temperature and liquid helium temperature, these epitaxial layers are considered of high quality for optoelectronic device applications in the wavelength range of 0.65–1.7 μm lattice matched to InP substrates.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Molecular beam epitaxial growth and transport properties of modulation‐doped AlGaAs‐GaAs heterostructures

G. Weimann and W. Schlapp

Appl. Phys. Lett. 46, 411 (1985); http://dx.doi.org/10.1063/1.95916 (3 pages) | Cited 30 times

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Mobilities and sheet carrier densities of single interface, modulation‐doped AlGaAs‐GaAs heterostructures depend on the structure and molecular beam epitaxial growth parameters. Variation of the thickness of the undoped spacer between 20 and 360 Å gave electron densities in the range 1012–2×1011 cm−2 in two‐dimensional electron gases. Thick spacers resulted in high 4.2‐K mobilities of 1.2×106 cm2/Vs in dark and 1.8×106 cm2/Vs under illumination with corresponding channel densities of 2.3×1011 cm−2 and 3.9×1011 cm−2, respectively. Two‐dimensional hole gases had mobilities of 83 000 cm2/Vs and hole concentrations of 2.7×1011 cm−2 at 4.2 K.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology
72.20.Fr Low-field transport and mobility; piezoresistance

Measurement of diffusion length gradients in hydrogen passivated silicon ribbon

R. H. Micheels, Z. Vayman, and J. I. Hanoka

Appl. Phys. Lett. 46, 414 (1985); http://dx.doi.org/10.1063/1.95596 (3 pages) | Cited 9 times

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Hydrogen passivation of p‐type Si ribbon was studied by means of diffusion length measurements using the surface photovoltage (SPV) method. The effect of gradients in diffusion length on the SPV measurements and the median depth sampled by this method were investigated by numerical solution of the appropriate diffusion equations. The SPV technique was found to give an average of the diffusion length depth distribution with a median sampling depth of 70 μm. Up to threefold increases in diffusion length were observed due to passivation. Diffusion length profiling measurements made by etching away the surface showed significant passivation occurring at a depth of 200 μm.
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66.30.J- Diffusion of impurities
81.65.-b Surface treatments
84.60.Jt Photoelectric conversion
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Channel mobility enhancement in InP metal‐insulator‐semiconductor field‐effect transistors

K. P. Pande and D. Gutierrez

Appl. Phys. Lett. 46, 416 (1985); http://dx.doi.org/10.1063/1.95597 (3 pages) | Cited 47 times

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The channel mobility of the InP metal‐insulator‐semiconductor field‐effect transistor (MISFET’s) was enhanced by incorporating a phosphorus‐rich interfacial oxide between the SiO2 gate dielectric and InP substrate. This phosphorus‐rich oxide was grown using an indirect, plasma‐enhanced chemical vapor deposition process followed by deposition of the SiO2 gate dielectric using the same technique. The metal‐insulator‐semiconductor structures, formed by aluminum deposition on the SiO2, did not exhibit any hysteresis in its capacitance‐voltage characteristic. An interface state density as low as 8×1010 cm−2 eV−1 was achieved for such an MIS system. A channel mobility of 3450 cm2/Vs at room temperature was achieved for 4‐μm gate length InP MISFET’s. These MISFET’s did not show any significant drift of channel current during six hours of continuous operation. These excellent characteristics are postulated to result from suppression of surface defects during the deposition of the SiO2 gate dielectric.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Extrinsic gettering via the controlled introduction of misfit dislocations

A. S. Salih, H. J. Kim, R. F. Davis, and G. A. Rozgonyi

Appl. Phys. Lett. 46, 419 (1985); http://dx.doi.org/10.1063/1.95598 (3 pages) | Cited 18 times

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As an alternative to existing gettering techniques, extrinsic gettering by misfit dislocations is described and gettering efficiency evaluated. Uniform arrays of misfit dislocations were generated at epitaxial Si interfaces by incorporation of 0.1–1% of Ge. The dislocations were shown to be confined to the interface by means of optical and electron microscopies. The misfit dislocations were used as extrinsic gettering sinks for metallic impurities deliberately introduced and diffused towards the dislocations. Transmission electron microscopy and secondary ion mass spectrometry analyses showed the preferential precipitation of Cu and Au at the misfit dislocations.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Yx Interaction between different crystal defects; gettering effect
78.30.Er Solid metals and alloys
78.40.Kc Metals, semimetals, and alloys
64.75.-g Phase equilibria

Hydrogen localization near boron in silicon

J. I. Pankove, P. J. Zanzucchi, C. W. Magee, and G. Lucovsky

Appl. Phys. Lett. 46, 421 (1985); http://dx.doi.org/10.1063/1.95599 (3 pages) | Cited 179 times

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Several models of boron neutralized by atomic hydrogen in silicon were tested by secondary ion mass spectrometry and infrared spectrometry. The hydrogen concentration is comparable to that of boron. Boron neutralization appears as a drop in free‐carrier absorption and as an increase in resistivity. A new infrared vibrational mode attributed to 〈111〉 vibrations of H tied to Si appears at 1875 cm−1.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.40.Fy Semiconductors
72.80.Cw Elemental semiconductors
78.30.-j Infrared and Raman spectra

Flash annealing of copper and krypton ion implants in cadmium telluride

K. M. James, J. L. Merz, and C. E. Jones

Appl. Phys. Lett. 46, 424 (1985); http://dx.doi.org/10.1063/1.95600 (3 pages) | Cited 9 times

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Copper and krypton ions have been implanted into Bridgman‐grown CdTe crystals. Radiation from tungsten lamps was used to flash anneal the implant damage. Low‐temperature photoluminescence analysis of the annealed samples indicates that the annealing provided almost complete repair of the implant damage. However, Cu implants did not significantly increase the activation of this impurity in the lattice when compared with an unimplanted, annealed standard. A comparison of the luminescence spectral changes following annealing at various temperatures of both implanted and unimplanted samples was made. This comparison indicated that activation of Cd site substitutional impurities in the lattice may be limited by the concentration of Cd vacancies generated by the annealing.
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61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
78.40.Fy Semiconductors

Strongly polarized bound exciton luminescence from GaAs grown by molecular beam epitaxy

M. S. Skolnick, T. D. Harris, C. W. Tu, T. M. Brennan, and M. D. Sturge

Appl. Phys. Lett. 46, 427 (1985); http://dx.doi.org/10.1063/1.95601 (3 pages) | Cited 51 times

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We report strongly polarized luminescence spectra in the 1.504–1.511‐eV spectral region in GaAs layers grown by molecular beam epitaxy. Up to 50 individual features are observed in very well resolved spectra. The sharp lines are attributed to bound exciton recombination at defect pairs preferentially oriented parallel to one of the 〈110〉 directions in the (001) growth plane. The preferential orientation occurs because of the inequivalence during planar growth of the [110] and [110] directions in the zincblende lattice.
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78.40.Fy Semiconductors
78.30.-j Infrared and Raman spectra
71.35.-y Excitons and related phenomena

Effect of phase separation on the electrical properties of the interface between Ni‐Ta thin films and GaAs substrate

A. Lahav and M. Eizenberg

Appl. Phys. Lett. 46, 430 (1985); http://dx.doi.org/10.1063/1.95602 (3 pages) | Cited 15 times

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The dependence of Schottky barrier height (ϕB) derived from current‐voltage measurements on annealing temperature of thin films of Ni, Ta, Ni/Ta, and Ta/Ni bilayers, and Ni60Ta40 alloy on n‐type (100) GaAs substrate was determined. Variations in the measured ϕB values have been related to the appearance of different phases at the interface with GaAs resulting from chemical reactions between the metal films and the GaAs substrate. Both Ni and Ta form with n‐GaAs rectifying contacts with barrier height higher for Ni than for Ta; at a certain temperature related to compound formation (550 °C for Ni and 650 °C for Ta) the contacts become ohmic. For the bilayers and alloyed films the presence of Ni phases (Ni2GaAs at 350 °C and NiGa at 550 °C at the interface with GaAs due to phase separation during annealing determines the electrical properties of the contact (rectifying up to 350 °C and ohmic at 550 °C). The ϕB measurements were proved to be very sensitive to the initial stages of interfacial reactions. The phase separation can be potentially used for formation of shallow contacts to n‐GaAs.
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73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Ns Metal-nonmetal contacts

Asymptotic estimates of diffusion times for rapid thermal annealing

J. D. Fehribach, R. Ghez, and G. S. Oehrlein

Appl. Phys. Lett. 46, 433 (1985); http://dx.doi.org/10.1063/1.95603 (3 pages) | Cited 10 times

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Temperature profiles for rapid thermal annealing of ion implanted material are analyzed using asymptotic methods. Although only rapid thermal annealing is discussed, these methods are also applicable to many other annealing processes. Formulas for effective diffusion distance and effective annealing time are given which correct for the deviations of actual annealing profiles from ideal annealing profiles. The three major deviations considered are (1) ramp terms, (2) rising plateaus, and (3) plateau overshoots. The analysis shows that even relatively small deviations can have sizable effects.
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66.30.J- Diffusion of impurities
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation
02.30.Mv Approximations and expansions

GaAs lateral epitaxial growth over a tungsten grating by molecular beam epitaxy

Naoto Kondo, Minoru Kawashima, Seigo Ando, and Kunishige Oe

Appl. Phys. Lett. 46, 436 (1985); http://dx.doi.org/10.1063/1.95604 (3 pages) | Cited 2 times

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GaAs lateral epitaxial growth over a tungsten grating is achieved by molecular beam epitaxy. Lateral overgrowth is seeded by epitaxial deposits formed on the GaAs (001) surface openings onto a line and space tungsten grating. The condition of obtaining continuous growth surface is investigated. While a rather slow growth rate (0.5 μm/h) results in faceted growth, a growth rate of 1 μm/h at a growth temperature of 730 °C on a 2.5‐μm period tungsten grating of 〈110〉 direction permits one to obtain a smooth continuous overgrown layer. The x‐ray diffraction pattern on this layer exhibits a single crystalline GaAs (400) pattern and an interface between the buried tungsten and the overgrown layer shows a preferable Schottky characteristic.
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68.55.-a Thin film structure and morphology
81.15.Jj Ion and electron beam-assisted deposition; ion plating
81.10.Bk Growth from vapor
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Second order gradiometer and dc SQUID integrated on a planar substrate

G. J. van Nieuwenhuyzen and V. J. de Waal

Appl. Phys. Lett. 46, 439 (1985); http://dx.doi.org/10.1063/1.95605 (3 pages) | Cited 7 times

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An integrated system of a thin‐film niobium dc superconducting quantum interference device (SQUID) and a second order gradiometer on a planar substrate is described. The system consists of a dc SQUID with eight loops in parallel, each sensitive to the second derivative ∂2Bz/∂x2 of the magnetic field. The calculated SQUID inductance is 1.3 nH. With an overall size of 16×16.5 mm2 a sensitivity of 1.5×10−9 Tm−2 Hz−1/2 is obtained. The measured transfer function for uniform fields perpendicular to the plane of the gradiometer is 2.1×10−7 T Φ−10.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
07.55.-w Magnetic instruments and components

Electric variation of the resistance of superconducting tunnel junctions

K. H. Gundlach and H. Konishi

Appl. Phys. Lett. 46, 441 (1985); http://dx.doi.org/10.1063/1.95606 (3 pages) | Cited 6 times

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We report on the change of normal resistance in tunnel junctions brought about by the application of a sufficiently large voltage at temperatures of 4.2 K and lower. This effect can be of use in various branches of electron and Cooper‐pair tunneling, including the optimization of quasiparticle mixers. The voltage‐induced change of the normal resistance can be reversed by warming up the sample to room temperature.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
74.78.-w Superconducting films and low-dimensional structures
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