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1 Mar 1985

Volume 46, Issue 5, pp. 453-521

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Etching of deep grooves for the precise positioning of cleaves in semiconductor lasers

J. E. Bowers, B. R. Hemenway, and D. P. Wilt

Appl. Phys. Lett. 46, 453 (1985); http://dx.doi.org/10.1063/1.95609 (3 pages) | Cited 2 times

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Photoelectrochemical etching of InP is used to etch deep (80 μm), narrow (20 μm) grooves. The grooves are used to precisely position cleaves in semiconductor lasers and to demonstrate the first wafer processing of long/short cleaved‐coupled‐cavity (C3) lasers. Large numbers of low threshold C3 lasers wth very similar cavity lengths were obtained.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.65.-b Surface treatments

Room‐temperature cw operation of InGaPAs/GaAlAs visible light double heterojunction lasers

Shinji Kaneiwa, Haruhisa Takiguchi, Toshiro Hayakawa, Saburo Yamamoto, Hiroshi Hayashi, Seiki Yano, and Toshiki Hijikata

Appl. Phys. Lett. 46, 455 (1985); http://dx.doi.org/10.1063/1.95610 (3 pages) | Cited 4 times

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InGaPAs/GaAlAs double heterojunction (DH) lasers operated continuously at room temperature in the spectral range of 720–730 nm. The DH structure was grown on a GaAs substrate by liquid phase epitaxy, and the laser diode fabrication was the same as V‐channeled substrate inner stripe lasers. The lowest values of a threshold current (Ith) were 145 and 186 mA under pulsed and cw operation, respectively. The characteristic temperature T0 of the Ith was typically 120 K. It was confirmed that the InGaPAs/GaAlAs system has sufficient band‐gap energy difference between the active layer and the cladding layer. Multiple longitudinal and fundamental transverse modes were obtained.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Noncontact photothermal probe beam deflection measurement of thermal diffusivity in an unconfined hot gas

J. C. Loulergue and A. C. Tam

Appl. Phys. Lett. 46, 457 (1985); http://dx.doi.org/10.1063/1.95611 (3 pages) | Cited 16 times

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A pulsed CO2 laser beam is used to produce a transient thermal refractive index gradient in a nitrogen gas doped with trace amounts of absorbing Freon 12 at temperatures from 25 to 425 °C. The diffusion of this gradient is probed by a continuous helium‐neon laser beam parallel to but displaced from the pulsed beam. The observed defletion signal agrees well with theory, and thermal diffusivity or gas temperature can be derived from the signal.
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51.30.+i Thermodynamic properties, equations of state
51.70.+f Optical and dielectric properties
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
07.60.-j Optical instruments and equipment

Photothermal deflection spectroscopy of a powder‐layer photoelectrochemical structure

M. A. Tamor and R. E. Hetrick

Appl. Phys. Lett. 46, 460 (1985); http://dx.doi.org/10.1063/1.95612 (3 pages) | Cited 3 times

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Photothermal deflection spectroscopy has been used to characterize a new photoelectrochemical (PEC) structure consisting of a thin porous layer of microscopic TiO2 or WO3 powder above a metallized substrate. For TiO2, factors affecting PEC activity such as crystal structure and degree of electronic conductivity can be correlated with their corresponding optical absorption spectra. For WO3, electronic charge transfer between powder and substrate is revealed by electrochromism in the powder under cathodic bias in acid solution.
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75.20.Ck Nonmetals
82.45.-h Electrochemistry and electrophoresis
07.60.Rd Visible and ultraviolet spectrometers
78.20.Jq Electro-optical effects

Broadband Y‐branch electro‐optic GaAs waveguide interferometer for 1.3 μm

P. Buchmann, H. Kaufmann, H. Melchior, and G. Guekos

Appl. Phys. Lett. 46, 462 (1985); http://dx.doi.org/10.1063/1.95613 (3 pages) | Cited 9 times

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Electro‐optic Mach–Zehnder rib waveguide interferometers with low loss Y branches and Schottky barrier electrodes have been fabricated in n−/n+‐GaAs by reactive ion etching. With antireflection coating and optimized Y branches device losses of the interferometers at 1.3 μm were as low as 4 dB. In a push‐pull configuration drive voltages of only 13 V suffice to attain a modulation depth of 12.7 dB. The optical signal bandwidth of these interferometers was measured to exceed 4.5 GHz.
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07.60.Ly Interferometers
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Gn Optical waveguides and couplers

Index‐guided arrays of Schottky barrier confined lasers

H. Temkin, R. A. Logan, J. P. van der Ziel, C. L. Reynolds, and S. M. Tharaldsen

Appl. Phys. Lett. 46, 465 (1985); http://dx.doi.org/10.1063/1.95614 (3 pages) | Cited 13 times

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We describe simple, self‐aligned, index‐guided arrays containing up to 10 ridge waveguide lasers. The Ohmic contact and current confining Schottky barrier are provided by a single broad area metallization. This technique requires only a single growth on a planar (100) substrate and is compatible with all epitaxial growth techniques. Using conventional liquid phase epitaxy of GaAlAs we have obtained astigmatism‐free arrays with threshold current as low as 20–30 mA per laser and power output linear to 300 mW/facet at temperatures as high as 100 °C, with the temperature dependence characterized by a large T0 of 240 °C. High optical quality of the output beam is demonstrated by very smooth and narrow far‐field patterns, both in the phase‐coupled and un‐coupled extremes of the waveguide separation.
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42.55.Px Semiconductor lasers; laser diodes

Electrodynamic explosions in liquids

Peter Graneau and P. Neal Graneau

Appl. Phys. Lett. 46, 468 (1985); http://dx.doi.org/10.1063/1.95559 (3 pages) | Cited 20 times

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This letter reports experimental results which show that electric arc currents through salt water produce explosions by electrodynamic forces rather than by the thermal expansion of gases generated in the arc column. The explosive phenomena can be explained with the aid of longitudinal Ampere forces but not with traditional Lorentz forces. This represents the first experimental evidence indicating that Ampere’s force law may be valid for dense arc plasmas.
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52.80.Qj Explosions; exploding wires
52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.80.Wq Discharge in liquids and solids
52.35.Tc Shock waves and discontinuities

Observed enhanced fluorescence at 2177, 2163, 1923, and 1620 Å in C III by photoexcitation with Mn VI line radiation at 310 Å

Niansheng Qi, Hayrettin Kilic, and Mahadevan Krishnan

Appl. Phys. Lett. 46, 471 (1985); http://dx.doi.org/10.1063/1.95560 (3 pages) | Cited 6 times

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Line radiation at 310.182 Å from Mn VI ions in a laser produced plasma was used to resonantly pump C III ions in an adjacent, vacuum arc discharge from the 2s 1S ground level to the 4p1P0 upper level. Enhanced fluorescence by up to a factor of 150 was measured on the 4p 1P0–3d 1D line at 2177 Å. Collisional exchanges between the n=4 levels transfer the pumped 4p population to the 4d and 4f levels. Enhanced fluorescence was also measured on the 4d 1D–3p 1P0 line at 1620 Å and on the 4f–3d lines at 2163 Å and 1923 Å, respectively.
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32.50.+d Fluorescence, phosphorescence (including quenching)
32.80.Xx Level crossing and optical pumping
32.30.Jc Visible and ultraviolet spectra
42.55.-f Lasers

Instability in a relativistic electron layer with a strong azimuthal magnetic field

T. P. Hughes and B. B. Godfrey

Appl. Phys. Lett. 46, 473 (1985); http://dx.doi.org/10.1063/1.95561 (3 pages) | Cited 1 time

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A thin relativistic electron layer immersed in a strong azimuthal magnetic field between two concentric cylindrical conductors is shown to be unstable. The instability is caused by the curvature of the walls, which modifies the interaction between particles in such a way that the inductive (attractive) forces are greater than the electrostatic (repulsive) forces. The growth rate of the instability peaks at long axial wavelengths.
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52.27.Ny Relativistic plasmas
52.65.-y Plasma simulation
52.35.Qz Microinstabilities (ion-acoustic, two-stream, loss-cone, beam-plasma, drift, ion- or electron-cyclotron, etc.)

Growth of ultrapure and Si‐doped InP by low pressure metalorganic chemical vapor deposition

M. A. Di Forte‐Poisson, C. Brylinski, and J. P. Duchemin

Appl. Phys. Lett. 46, 476 (1985); http://dx.doi.org/10.1063/1.95562 (3 pages) | Cited 27 times

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Low pressure metalorganic chemical vapor epitaxial growth and characterization of high purity and Si‐doped indium phosphide on semi‐insulating (100) InP:Fe substrate are presented in this letter. Electrical characteristics of the layers were determined from Hall measurements. Hall mobilities as high as 145 000 cm2 V−1 s−1 at 77 K have been achieved on high purity layers with net donnor density ND−NA≂2×1014 cm−3. High resolution photoluminescence measurements were performed with the as‐grown layers at temperatures down to 1.7 K. Carrier concentration and the resulting mobility of intentionally Si‐doped low pressure metalorganic chemical vapor deposition grown InP layers were also studied.
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68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
61.72.U- Doping and impurity implantation

Diffusion and precipitation in amorphous Si

R. G. Elliman, J. M. Gibson, D. C. Jacobson, J. M. Poate, and J. S. Williams

Appl. Phys. Lett. 46, 478 (1985); http://dx.doi.org/10.1063/1.95563 (3 pages) | Cited 38 times

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The diffusion and precipitation of several ion implanted impurities in amorphous Si have been observed at temperatures of 300–600 °C. Typical slow diffusers in crystalline Si, such as As, In, Sb, and Bi, show little or no diffusion at low concentrations. At high concentrations (>1 at. %), they diffuse rapidly with D≳10−15 cm2/s in the temperature range 500–600 °C. Typical fast diffusers in crystalline Si, such as Cu and Au, diffuse in amorphous Si with D>10−12 cm2/s at 400–600 °C. Precipitation has been observed for both the fast and slow diffusers in amorphous Si.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
61.43.Fs Glasses
61.43.-j Disordered solids
81.30.Mh Solid-phase precipitation

Studies of Ag photodoping in GexSe1−x glass using microlithography techniques

W. Leung, N. W. Cheung, and A. R. Neureuther

Appl. Phys. Lett. 46, 481 (1985); http://dx.doi.org/10.1063/1.95564 (3 pages) | Cited 12 times

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Using microlithographic techniques to define the Ag sensitized area, the lateral profile of Ag diffusion in GexSe1−x (x≊0.1) glass is made directly visible with an optical microscope. Experimental measurements have verified that Ag photodoping in Ge0.1Se0.9 glass obeys Fick’s diffusion law with a constant diffusivity. Light absorption in the Ag2Se region has little effect on Ag photodoping. Ag photodoping is caused mainly by light absorption in the Ge0.1Se0.9 near the boundary between the Ag‐containing and the non‐Ag‐doped region. Light absorption in Ge0.1Se0.9 glass has a long range effect which causes Ag photodoping to occur even when light irradiation is away (up to 3 μm) from Ag‐containing region.
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61.72.U- Doping and impurity implantation
07.68.+m Photography, photographic instruments; xerography
66.30.J- Diffusion of impurities
78.70.-g Interactions of particles and radiation with matter

Deep level photoluminescence commonly present in undoped Czochralski grown GaAs

Michio Tajima

Appl. Phys. Lett. 46, 484 (1985); http://dx.doi.org/10.1063/1.95565 (3 pages) | Cited 10 times

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Photoluminescence (PL) under the below band‐gap excitation with the 1.32‐μm line of a yttrium aluminum garnet laser has been measured for undoped, semi‐insulating Czochralski grown GaAs crystals. A Gaussian band with a peak at 0.67 eV and a half‐width of 120 meV has been found to appear commonly, regardless of the groups of crystals classified according to their dominant PL band measured under the above band‐gap excitation. The occurrence of the PL fatigue effect, the positive correlation of the PL intensity with the dislocation density, and the spectral shape indicate that the main deep donor EL2 is involved in the transition responsible for the 0.67‐eV band.
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78.40.Fy Semiconductors

Accurate phase capacitance spectroscopy of transition metal silicon diodes

Howard L. Evans, Xu Wu, Edward S. Yang, and Paul S. Ho

Appl. Phys. Lett. 46, 486 (1985); http://dx.doi.org/10.1063/1.95566 (3 pages) | Cited 10 times

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A complete understanding of Schottky barrier devices requires a knowledge of the electronic states at the metal‐semiconductor interface. For this reason, a novel and accurate technique for measuring the capacitance of forward biased Schottky diodes has been developed. It is found that the measurement is extremely sensitive to the phase error and that the lock‐in amplifier behaves in a nonlinear fashion at high signal current. These difficulties have been resolved to realize the interface state spectrum of a Pd/silicon Schottky barrier.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
73.20.-r Electron states at surfaces and interfaces
85.30.Hi Surface barrier, boundary, and point contact devices

Redistribution of Cr in GaAs:Cr and of V in GaAs:V after implantation of Si, Be, or B and annealing in a controlled atmosphere

W. Kütt, D. Bimberg, M. Maier, H. Kräutle, F. Köhl, and E. Tomzig

Appl. Phys. Lett. 46, 489 (1985); http://dx.doi.org/10.1063/1.95567 (3 pages) | Cited 9 times

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The redistribution of V in V‐doped and Cr in Cr‐doped semi‐insulating GaAs substrates after implantation with Si, Be, B and subsequent controlled atmosphere annealing at 840 °C for 20 min is determined using secondary ion mass spectrometry. Both V and Cr show accumulation into zones of high defect densities at ∼Rp+ΔRp of the Si, Be, or B implantation profile, respectively, and a depletion which extends beyond that zone to ∼2–4×Rp. Some surface accumulation has also been observed. For all three cases studied, the V redistribution is much smaller than the Cr redistribution. It is therefore concluded that from thermal stability point of view semi‐insulating GaAs:V should be a better substrate material for implantation type devices than is GaAs:Cr.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
66.30.J- Diffusion of impurities

A high‐sensitivity stressed photoconductor for observing luminescence from germanium

J. M. Perez

Appl. Phys. Lett. 46, 492 (1985); http://dx.doi.org/10.1063/1.95568 (2 pages)

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We describe a detector for observing luminescence from germanium with a noise equivalent power (NEP)=2×10−14 W/(Hz)1/2 at 0.71 eV. The detector consists of a high‐purity Ge photoconductor at 2 K which is stressed 85 kg/mm2 in the 〈111〉 direction to reduce the band gap to 0.68 eV. At this band gap, the detector efficiently absorbs luminescence ≥0.70 eV but is insensitive to room‐temperature blackbody radiation which degrades commercial detectors with smaller band gaps. The NEP limit set by shot noise is 1.7×10−15 W/(Hz)1/2 at 0.71 eV. The current at low light level is thought to be space charge limited current.
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78.60.-b Other luminescence and radiative recombination
72.40.+w Photoconduction and photovoltaic effects
85.60.Gz Photodetectors (including infrared and CCD detectors)
71.35.-y Excitons and related phenomena

Properties of (Ge2)x(GaAs)1−x alloys grown by molecular beam epitaxy

Indrajit Banerjee, Don W. Chung, and Herbert Kroemer

Appl. Phys. Lett. 46, 494 (1985); http://dx.doi.org/10.1063/1.95569 (3 pages) | Cited 26 times

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Single‐crystalline (Ge2)x(GaAs)1−x alloys have been grown by molecular beam epitaxy on GaAs (100) substrates at substrate temperatures of 550 and 430 °C. The structure of these alloys has been studied using transmission electron microscopy. We observe that growths done at 550 °C show a compositional phase separation, within a structurally single‐crystalline lattice, into Ge‐rich and GaAs‐rich domains whose sizes are of the order of 100 Å. Growths at 430 °C appear to be both single phase and single crystalline. Room‐temperature Hall measurements on the single‐phase alloys show them to be n type.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
64.70.K- Solid-solid transitions

InP single crystal film fabrication on a glass substrate

Shosan Iida

Appl. Phys. Lett. 46, 496 (1985); http://dx.doi.org/10.1063/1.95570 (3 pages) | Cited 1 time

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A new method for fabricating an InP single crystal film on a glass substrate is given. It uses a molecular beam deposition technique in combination with other techniques such as recrystallization and liquid phase epitaxy techniques. By this method an InP layer covered with an In layer is fabricated on a glass substrate and treated in situ. After the treatment, it is confirmed that an InP single crystal film has been fabricated on the glass substrate through crystallographical examinations by means of an electron probe x‐ray microanalyzer, x‐ray Laue photography, and x‐ray diffractometer using the Bond technique for single crystals.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Optical waveguide detection: Photodetector array formed on the waveguide utilizing laser recrystallized silicon

R. W. Wu, J. T. Boyd, H. A. Timlin, Howard E. Jackson, and John L. Janning

Appl. Phys. Lett. 46, 498 (1985); http://dx.doi.org/10.1063/1.95915 (3 pages) | Cited 5 times

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Integrated detection of light propagating in an optical waveguide with a photodetector array fabricated directly on the waveguide surface is demonstrated. Laser recrystallization of polycrystalline silicon is utilized. Periodically spaced antireflection stripes are used to confine grain boundaries formed during laser recrystallization to the area under these stripes, with photodetector elements formed on single crystal grains between the stripes. Regions containing the grain boundaries are then removed by plasma etching. Lateral p‐i‐n photodiode elements formed by ion implantation are characterized by reverse leakage currents <10−11 A and breakdown voltages of 40–80 V. Dynamic ranges over which the optical response is linear are measured to be 55–60 dB.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Dw Photodiodes; phototransistors; photoresistors

Combination of open‐tube vapor and liquid phase epitaxy of Hg1−xCdxTe

E. Sand, D. Levy, and Y. Nemirovsky

Appl. Phys. Lett. 46, 501 (1985); http://dx.doi.org/10.1063/1.95571 (3 pages) | Cited 1 time

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A novel growth process of Hg1−xCdxTe epitaxial layers by a combination of open‐tube vapor phase epitaxy (VPE) and liquid phase epitaxy (LPE) techniques is described. Device‐quality layers with improved morphology, reduced misfit dislocations, and a reflecting boundary with very low surface recombination velocity at the substrate interface are obtained by this method. High performance photodiodes operating at both 77 and 193 K with cut‐off wavelengths of 6.2 and 5.3 μm respectively were fabricated. The epitaxial layers obtained on bulk CdTe by the combination of VPE and LPE are in some respects better than layers grown by LPE on alternate substrates such as CdZnTe. off
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68.55.-a Thin film structure and morphology
85.60.Dw Photodiodes; phototransistors; photoresistors

Determination of heterojunction band offsets by capacitance‐voltage profiling through nonabrupt isotype heterojunctions

Herbert Kroemer

Appl. Phys. Lett. 46, 504 (1985); http://dx.doi.org/10.1063/1.95572 (2 pages) | Cited 41 times

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It is shown that the capacitance‐voltage (C‐V) profiling technique to obtain heterojunction (HJ) band offsets is grading independent, that is, the band offset values obtained by it are the values for the limit of zero compositional grading, even in nonabrupt junctions. The result explains the good agreement of old data taken on nonabrupt HJ’s grown by liquid phase epitaxy (LPE) with more recent data on abrupt junctions. It suggests that LPE grown HJ’s may be used more freely than was previously thought to determine those offsets, making C‐V profiling the most versatile technique for the determination of HJ band offsets.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling

Transient capacitance analysis of III‐V semiconductors with organic‐on‐inorganic semiconductor contact barrier diodes

Michael Stavola, John M. Parsey, Stephen R. Forrest, Martin L. Kaplan, Paul H. Schmidt, and Morris S. S. Young

Appl. Phys. Lett. 46, 506 (1985); http://dx.doi.org/10.1063/1.95573 (3 pages) | Cited 5 times

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We have investigated the suitability of organic‐on‐inorganic (OI) semiconductor contact barrier diodes for use in deep level transient spectroscopy (DLTS) of III‐V semiconductors. The diodes are formed by vacuum deposition of a thin film of an organic molecular solid onto semiconductor samples as has been previously reported. DLTS measurements performed on n‐type GaAs using conventional Au Schottky barriers have been compared with those using OI diodes DLTS measurements have also been made on as‐grown p‐type GaAs and n‐type InP (upon which high quality conventional Schottky barriers cannot readily be fabricated) using OI diodes. OI devices can be made upon many semiconductors for which conventional Schottky barriers cannot be fabricated, require no sample heating, and can be easily removed without detrimental effects to the inorganic semiconductor material.
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78.40.Fy Semiconductors
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.De Semiconductor-device characterization, design, and modeling
73.40.-c Electronic transport in interface structures

Resonant tunneling oscillations in a GaAs‐AlxGa1−xAs heterostructure at room temperature

T. J. Shewchuk, P. C. Chapin, P. D. Coleman, W. Kopp, R. Fischer, and H. Morkoç

Appl. Phys. Lett. 46, 508 (1985); http://dx.doi.org/10.1063/1.95574 (3 pages) | Cited 95 times

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This letter reports the first observation of resonant tunneling negative differential resistance (NDR) through a double barrier GaAs‐AlxGa1−xAs ‐GaAs‐AlxGa1−x As‐GaAs structure at room temperature. The NDR yields radio frequency oscillations at 300 K in a coaxial cable circuit that compare closely to those of a standard 1N3716 tunnel diode.
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73.40.Gk Tunneling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Silicon interstitial generation by argon implantation

G. B. Bronner and J. D. Plummer

Appl. Phys. Lett. 46, 510 (1985); http://dx.doi.org/10.1063/1.95575 (3 pages) | Cited 17 times

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In this letter we show that damaged layers in silicon created by argon implantation act as a source of silicon interstitials. This effect is shown to cause orders of magnitude increase in the diffusion coefficient of phosphorus at temperatures less than 800 °C. This creation of interstitials is shown to be long lasting. The value of this is discussed in understanding the role of point defects on dopant diffusion.
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61.72.jd Vacancies
61.72.jj Interstitials
61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities
61.80.Jh Ion radiation effects

Time‐resolved kinetics of e‐h plasma in GaAsP under intense picosecond laser pulse excitation

H. J. Zarrabi, W. B. Wang, and R. R. Alfano

Appl. Phys. Lett. 46, 513 (1985); http://dx.doi.org/10.1063/1.95576 (3 pages) | Cited 5 times

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Time‐resolved photoluminescence kinetics of GaAs1−xPx (x=0.38) were measured by a streak camera system in order to determine the radiative and nonradiative recombination rates. The photoluminescence decay profile was found to be intensity dependent. When excitation power fluence increased above 6×108 W/cm2, the decay profile of emission deviated from exponential form. This is attributed to bimolecular and Auger processes. The bimolecular and Auger rates were determined to be BR=9×10−10 cm3/s and CNR=3×10−29 cm6/s by fitting the time‐resolved photoluminescence decay profiles to the solution of the rate equation which describes the dynamical behavior of the photogenerated carriers.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.40.Fy Semiconductors
85.60.Jb Light-emitting devices
78.60.-b Other luminescence and radiative recombination
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