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1 Mar 1985

Volume 46, Issue 5, pp. 453-521

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Fast shrinkage of oxidation‐induced stacking faults in silicon at the initial stage of annealing in nitrogen

Kenji Nishi and Dimitri A. Antoniadis

Appl. Phys. Lett. 46, 516 (1985); http://dx.doi.org/10.1063/1.95577 (3 pages) | Cited 6 times

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The shrinkage of oxidation‐induced stacking faults (OSF′s) in silicon has been studied in the temperature range of 950–1100 °C in nitrogen ambient. Abnormally fast OSF shrinkage with activation energy of 2.3 eV has been observed at the initial stage of annealing. This fast shrinkage regime becomes more pronounced as the annealing temperature is reduced. It is proposed that the fast OSF shrinkage rate is due to the fact that initially the shrinkage is dominated by the rate of self‐interstitial capture at the silicon/silicon dioxide interface, while the subsequent lower rate with activation energy of 4.3 eV is due to the traditionally accepted diffusion‐limited mechanism. Because of the difference in activation energies, as temperature increases above about 1100 °C the latter mechanism becomes dominant and the fast shrinkage regime disappears.
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61.72.Nn Stacking faults and other planar or extended defects
81.65.-b Surface treatments
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
66.30.J- Diffusion of impurities

Recombination lifetime of carriers in GaAs‐GaAlAs quantum wells near room temperature

Yasuhiko Arakawa, Hiroyuki Sakaki, Masao Nishioka, Junji Yoshino, and Takeshi Kamiya

Appl. Phys. Lett. 46, 519 (1985); http://dx.doi.org/10.1063/1.95578 (3 pages) | Cited 30 times

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The lifetime τ of carriers in undoped GaAs‐GaAlAs quantum well structures was studied at room temperature by using the photoluminescence phase shift method. We have found that τ is inversely proportional to the carrier concentration under the excitation levels of 1016–1018 cm−3. The comparison of these results with both the theory of band‐to‐band recombination and the measured dependence of τ on the carrier concentration at 77 K suggests that the carrier recombination near room temperature is dominated by this band‐to‐band recombination process. We also discussed the dependence of τ on the quantum well thickness.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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