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15 Mar 1985

Volume 46, Issue 6, pp. 525-614

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Fabrication and performance characteristics of 1.55‐μm InGaAsP multiquantum well ridge guide lasers

N. K. Dutta, T. Wessel, N. A. Olsson, R. A. Logan, L. A. Koszi, and R. Yen

Appl. Phys. Lett. 46, 525 (1985); http://dx.doi.org/10.1063/1.95579 (3 pages) | Cited 3 times

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We report the fabrication and performance characteristics of InGaAsP ridge waveguide lasers with multiquantum well (MQW) active layers emitting near 1.55 μm. The active region has four active wells (1.55 μm InGaAsP) and three barriers (1.3 μm InGaAsP). The thicknesses of the active wells and the barrier layers are ∼250 Å. The 360‐μm‐long lasers have threshold currents in the range 60–80 mA at 30 °C, external differential quantum efficiency ∼25% at 30 °C, and T0∼70 K. The modulation bandwidths of the lasers are ∼1.5 GHz and they exhibit less frequency chirping than similar lasers with conventional double heterostructure (DH) active layer. Since frequency chirp limits the performance of high bit rate long haul fiber communication system at 1.55 μm, we believe MQW lasers offer an advantage over conventional DH lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Fc Modulation, tuning, and mode locking

Pulse compression in optical fiber filters

Herbert G. Winful

Appl. Phys. Lett. 46, 527 (1985); http://dx.doi.org/10.1063/1.95580 (3 pages) | Cited 88 times

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A method is described for compressing optical pulses at any wavelength in an optical fiber. It uses the negative dispersion property of permanent phase gratings created within the fiber. No external grating pair is required.
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42.81.-i Fiber optics
42.65.-k Nonlinear optics
42.25.Lc Birefringence

Analysis of rib waveguides with sloped rib sides

Nadir Dagli and Clifton G. Fonstad

Appl. Phys. Lett. 46, 529 (1985); http://dx.doi.org/10.1063/1.95581 (3 pages) | Cited 8 times

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Using a mode matching technique, an approximate microwave equivalent circuit is developed for a dielectric step discontinuity in the transverse direction of a dielectric waveguide. Using this basic building block, rib waveguides with sloped sides are analyzed by approximating the actual rib profile with a staircase function, and cut‐off conditions for E12 and E21 modes are calculated. The results of the theoretical analysis are verified with experiments performed on homojunction GaAs rib waveguides. Finally, an effective rib width appropriate for applying the results of analyses of ideal structures to sloped sided guides is identified.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

Evidence for optical bistability in millimeter gas cells

R. G. Harrison, I. A. Al‐Saidi, E. J. D. Cummins, and W. J. Firth

Appl. Phys. Lett. 46, 532 (1985); http://dx.doi.org/10.1063/1.95582 (3 pages) | Cited 5 times

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Optical bistability, limiting, and other pulse shaping effects are observed in compact Fabry–Perot resonators containing SF6. The gas, in cells as short as 1 mm, is excited with smooth 100‐ns transversely excited atmospheric CO2 laser pulses. The optical nonlinearity responsible for these effects is well described by a four‐state kinetic model with unsaturable excited state absorption.
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42.65.-k Nonlinear optics
07.60.Ly Interferometers
51.70.+f Optical and dielectric properties

Electric field selective optical data storage using persistent spectral hole burning

U. Bogner, K. Beck, and Max Maier

Appl. Phys. Lett. 46, 534 (1985); http://dx.doi.org/10.1063/1.95583 (3 pages) | Cited 24 times

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The electric field domain is used as a storage dimension in optical data storage by persistent spectral hole burning. The memory locations in the electric field domain are addressed with the voltage applied to the sample consisting of the amorphous polymer polyvinyl‐butyral doped with the dye 9‐amino acridine. The information is written by burning spectral holes at different electric field strengths with a HeCd laser and read by detecting the presence or absence of holes with weak laser intensity.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
78.20.Jq Electro-optical effects
79.20.Ds Laser-beam impact phenomena
42.79.-e Optical elements, devices, and systems

High‐power closed‐cycle subsonic cw CO laser excited by a transverse self‐sustained discharge

Shun‐ichi Sato, Tomoo Fujioka, and Hideaki Saito

Appl. Phys. Lett. 46, 537 (1985); http://dx.doi.org/10.1063/1.95584 (3 pages) | Cited 5 times

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Design and performance characteristics of a closed‐cycle subsonic cw CO laser excited by a transverse self‐sustained dc glow discharge are described. The maximum laser output power obtained to date is 380 W or 950 W per meter of discharge length, corresponding electrical conversion efficiency and specific output energy being 10.2% and 64.7 J/g, respectively.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Hc Glow; corona

Optical diagnostics of positive column dc discharge by Rydberg state spectroscopy

B. N. Ganguly and Alan Garscadden

Appl. Phys. Lett. 46, 540 (1985); http://dx.doi.org/10.1063/1.95585 (3 pages) | Cited 22 times

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High resolution measurements of the Stark broadening of very high Rydberg 1P states in helium provide a resolution in electric field of approximately 1 V cm−1. The tunable laser‐induced optogalvanic signal experiments were performed in a low pressure, low current discharge. The high sensitivity permits, for the first time, the net electric field to be obtained by a spectroscopic technique. The relative metastable density profile and indirectly, the electron density profile are also obtained from the magnitudes of the optogalvanic signals.
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32.60.+i Zeeman and Stark effects
32.70.Jz Line shapes, widths, and shifts
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.80.Hc Glow; corona

Photoinduced diffusion of Ag in GexSe1−x glass

W. Leung, N. Cheung, and A. R. Neureuther

Appl. Phys. Lett. 46, 543 (1985); http://dx.doi.org/10.1063/1.95586 (3 pages) | Cited 10 times

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Diffusion of Ag in GexSe1−x (x∼0.1) under UV light irradiation is studied using Rutherford backscattering spectrometry and microlithography techniques. The diffusion coefficient at 21 °C and 2 mW/cm2 is determined to be 2.7 nm2/s. The temperature dependence of the diffusivity follows an Arrhenius‐type equation with an activation energy of 5.32 kcal/mole (0.23 eV) and a pre‐exponent factor of 2.5×104 nm2/s. The reciprocity of irradiation intensity and exposure time with respect to the diffusion distance is confirmed. Specifically, the diffusivity is found to be directly proportional to the irradiation intensity.
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66.30.J- Diffusion of impurities
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)

CO2 laser‐induced dislocations and other damage in tellurium single crystals

N. V. Quang, I. Shih, S. K. Zhang, and C. H. Champness

Appl. Phys. Lett. 46, 545 (1985); http://dx.doi.org/10.1063/1.95532 (3 pages)

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Etching experiments were performed on (0001) oriented tellurium single crystal samples irradiated with a CO2 laser beam to reveal the localized induced dislocations in the crystals. It was found that the tellurium surface is very sensitive to the laser beam. Under low illumination intensity, visible defects were not found but the dislocation density was greatly increased. Under high illumination intensity, visible damage on the surface was observed; the surface was found to be locally remelted by the laser beam to result in a hole with many cracks around it.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.80.-x Physical radiation effects, radiation damage
79.20.Ds Laser-beam impact phenomena
81.65.-b Surface treatments

Far UV pulsed laser melting of silicon

G. Gorodetsky, Jerzy Kanicki, T. Kazyaka, and R. L. Melcher

Appl. Phys. Lett. 46, 547 (1985); http://dx.doi.org/10.1063/1.95533 (3 pages) | Cited 25 times

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Calorimetric, acoustic, and morphological studies of silicon irradiated with intense 14‐ns, 193‐nm excimer laser pulses are reported. To within the experimental uncertainty, the entire radiation absorbed is converted to heat at all fluences. The volume changes on melting leads to enhanced acoustic wave generation. The morphology of the surface damage is consistent with the existence of both standing surface acoustic waves and of capillary waves.
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79.20.Ds Laser-beam impact phenomena
64.70.D- Solid-liquid transitions
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Structural damage at the Si/SiO2 interface resulting from electron injection in metal‐oxide‐semiconductor devices

R. E. Mikawa and P. M. Lenahan

Appl. Phys. Lett. 46, 550 (1985); http://dx.doi.org/10.1063/1.95534 (3 pages) | Cited 16 times

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With electron spin resonance, we have observed structural changes in metal‐oxide‐semiconductor structures resulting from the photoemisson of electrons from the silicon into the oxide. A trivalent silicon defect at the Si/SiO2 interface, termed Pb, is shown to be responsible for the interface states induced by electron injection. We find that these Pb centers are amphoteric interface state defects.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces

Composition of amorphous (Si,Ge):H films from nuclear elastic scattering of 12 MeV protons

R. Schwarz, S. Wagner, R. T. Kouzes, and R. D. Wieting

Appl. Phys. Lett. 46, 552 (1985); http://dx.doi.org/10.1063/1.95535 (3 pages) | Cited 2 times

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Nuclear elastic scattering of 12 MeV protons was employed for the first time to study the composition of thin films of hydrogenated amorphous Si‐Ge alloys. The concentrations of H, Si, and Ge were measured simultaneously. The detection limit is about 25 ppm for a 10‐min run. Free‐standing films or films on a flat substrate with a total thickness of up to 20 μm can be analyzed.
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68.60.-p Physical properties of thin films, nonelectronic
82.80.-d Chemical analysis and related physical methods of analysis
29.30.Ep Charged-particle spectroscopy

Capless annealing of ion implanted GaAs in automatically evaporated vapor

C. T. Lee

Appl. Phys. Lett. 46, 554 (1985); http://dx.doi.org/10.1063/1.95536 (3 pages) | Cited 3 times

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A simplified automatic vapor capless annealing technique for ion implanted GaAs wafers is demonstrated. The basic method is to put an implanted GaAs wafer in a partially sealed quartz crucible which is filled with GaAs powder. The measured Hall mobility of the implanted sample annealed by this method is almost the same as those obtained by the other usual annealing methods, but the transition region can be reduced significantly. Furthermore, the surface morphology is better than that obtained by dielectric encapsulant annealing methods.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions

Variation of the effective Richardson constant of Pt‐Si Schottky diode due to annealing treatment

Naotake Tōyama, Tōru Takahashi, Hironori Murakami, and Hiroaki Kōriyama

Appl. Phys. Lett. 46, 557 (1985); http://dx.doi.org/10.1063/1.95537 (3 pages) | Cited 10 times

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The effect of heat treatment on the various diode parameters in a Pt‐Si Schottky diode has been studied. It has been revealed from photoelectric measurements that heat treatment causes a distinct variation in the effective Richardson constant of the diode whereas Schottky barrier height scarcely shows such a large change as reported to date. Also, the value of the effective Richardson constant of a Pt‐Si contact in the as‐prepared state is found to depend strongly on the sputtered Pt film thickness in contrast to other metal‐Si contacts such as Au‐Si or Ag‐Si.
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73.30.+y Surface double layers, Schottky barriers, and work functions
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.40.Ns Metal-nonmetal contacts
85.30.Hi Surface barrier, boundary, and point contact devices

Electronic structure of oxygen thermal donors in silicon

J. Robertson and A. Ourmazd

Appl. Phys. Lett. 46, 559 (1985); http://dx.doi.org/10.1063/1.95538 (3 pages) | Cited 11 times

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The electrical activity of oxygen‐related thermal donors in the model of Ourmazd, Bourret, and Schröter is shown to derive from the shallow, doubly occupied pπ state of a divalent silicon at the center of a cluster of five or more oxygens.
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78.40.Fy Semiconductors

Epitaxial growth of ZrSi2 on silicon with an ion beam mixing assisted scheme

H. C. Cheng and L. J. Chen

Appl. Phys. Lett. 46, 562 (1985); http://dx.doi.org/10.1063/1.95539 (3 pages) | Cited 22 times

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Ion beam mixing has been demonstrated to play a critical role in growing refractory silicide epitaxially on silicon for the first time. Epitaxial ZrSi2 has been successfully grown on (111) and (001) Si. Best epitaxy was obtained in samples irradiated by As+ with an ion range close to the original Zr/Si interface to a dose of 1×1016/cm2 followed by 1100 °C annealing. The breaking of metal–oxygen bonds, dissolution of native silicon dioxide, as well as dispersion of impurities present at the interface by ion beam are thought to be beneficial in inducing the epitaxial growth of ZrSi2 on Si. The orientation relationships between epitaxial ZrSi2 and Si were found to be [010]ZrSi2//[001]Si, (002)ZrSi2//(220)Si (with about 1° misorientation), [310]ZrSi2//[112]Si, and (130)ZrSi2//(111)Si. Hexagonal and square networks of interfacial dislocations were observed. They were identified to be of edge type with (1)/(6) 〈112〉 or 1/2 〈110〉 Burgers vectors. The average spacings were measured to be 140 and 800 Å correspondingly. The results represent the first successful attempt to grow orthorhombic structure refractory silicide epitaxially on silicon.
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68.55.-a Thin film structure and morphology
61.80.Jh Ion radiation effects
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Potential enhanced Sb and As doping in Si molecular beam epitaxy

R. A. A. Kubiak, W. Y. Leong, and E. H. C. Parker

Appl. Phys. Lett. 46, 565 (1985); http://dx.doi.org/10.1063/1.95540 (3 pages) | Cited 30 times

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Potential enhanced doping (PED) is a method of enhancing the incorporation efficiency of certain low sticking coefficient dopants in Si molecular beam epitaxy, and obtaining precise control over profiles. The efficacy of PED is demonstrated for Sb, As (and Ga) doping, using elemental and III‐V compound coevaporation sources. Enhanced doping by PED depends on increased incorporaton efficiency from the adsorbed dopant adlayer, and does not significantly affect adsorption/desorption processes.
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61.72.U- Doping and impurity implantation
68.55.-a Thin film structure and morphology

Pulsed laser atom probe analysis of GaAs and InAs

A. Cerezo, C. R. M. Grovenor, and G. D. W. Smith

Appl. Phys. Lett. 46, 567 (1985); http://dx.doi.org/10.1063/1.95541 (3 pages) | Cited 15 times

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A pulsed laser atom probe has been used to obtain the first stoichiometrically correct analysis of GaAs and InAs. These results are presented, together with a comparison of results obtained from conventional and pulsed laser atom probes.
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82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
07.77.-n Atomic, molecular, and charged-particle sources and detectors
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Growth of a novel InAs‐GaAs strained layer superlattice on InP

M. C. Tamargo, R. Hull, L. H. Greene, J. R. Hayes, and A. Y. Cho

Appl. Phys. Lett. 46, 569 (1985); http://dx.doi.org/10.1063/1.95542 (3 pages) | Cited 39 times

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Strained layer superlattice structures with ultrathin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP. Low angle x‐ray scattering and transmission electron microscopy studies were used to characterize the layers.
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68.55.-a Thin film structure and morphology
68.60.-p Physical properties of thin films, nonelectronic

HgTe‐CdTe superlattice band‐gap enhancement due to interdiffusion

J. N. Schulman and Yia‐Chung Chang

Appl. Phys. Lett. 46, 571 (1985); http://dx.doi.org/10.1063/1.95543 (3 pages) | Cited 22 times

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The effect of interdiffusion on the band gap of the HgTe‐CdTe superlattice is calculated. Two simple models of the form of the interdiffusion are assumed: linear compositional grading, or shrinkage of HgTe layer widths due to Hg diffusion. A two‐band model is used to solve for the electronic energy levels using parameters obtained from bulk data. Comparison with tentative experimental data implies that some effective shrinkage of the HgTe layers occurs.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Spatial distribution of 0.68‐eV emission from undoped semi‐insulating gallium arsenide revealed by high resolution luminescence imaging

C. A. Warwick and G. T. Brown

Appl. Phys. Lett. 46, 574 (1985); http://dx.doi.org/10.1063/1.95544 (3 pages) | Cited 21 times

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The luminescence properties of undoped semi‐insulating liquid encapsulated Czochralski‐grown GaAs ingots have been characterized with ∼3‐μm spatial resolution using a scanning electron microscope based, cathodoluminescence (CL) system. The use of a cryostat operating at ∼6 K with cooled PbS and Ge detectors for midgap luminescence imaging has revealed for the first time a depletion in the 0.68‐eV emission from zones ∼20 μm wide adjacent to individual polygonized dislocation arrays known as cell walls. These midgap luminescence results have been correlated with band edge CL images of cell structures and with dislocation images obtained using double crystal x‐ray topography. It is concluded that dislocation arrays attract or getter the defect centers responsible for the 0.68‐eV emission in undoped semi‐insulating GaAs, as opposed to generating them.
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78.60.Hk Cathodoluminescence, ionoluminescence
78.40.Fy Semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.10.Fq Growth from melts; zone melting and refining

Role of resonant laser enhanced surface kinetics in the low substrate temperature molecular beam epitaxial growth of compound semiconductors: A Monte Carlo study

Jasprit Singh and K. K. Bajaj

Appl. Phys. Lett. 46, 577 (1985); http://dx.doi.org/10.1063/1.95545 (3 pages) | Cited 3 times

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The role of resonant laser enhanced cation surface kinetics in low‐temperature molecular beam epitaxial (MBE) growth of compound semiconductors is examined using Monte Carlo techniques. At low temperature, due to reduced cation surface migration, conventional MBE growth produces films with rough surfaces and consequently heterojunctions with rough interfaces. Resonant coupling of photons to bonds of cations at nonkink sites of the growing surface can enhance the cation surface migration rate and thus produce films with smooth surfaces and sharp interfaces. Results of our simulations are presented to establish the potential of resonant laser enhanced surface migration in the MBE growth of compound semiconductors and conditions necessary to achieve this potential are identified.
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68.55.-a Thin film structure and morphology
66.30.-h Diffusion in solids
79.20.Ds Laser-beam impact phenomena
68.60.-p Physical properties of thin films, nonelectronic

Interface and precipitation effects in solid phase epitaxy of Sb implanted amorphous Si

S. U. Campisano, J. M. Gibson, and J. M. Poate

Appl. Phys. Lett. 46, 580 (1985); http://dx.doi.org/10.1063/1.95546 (2 pages) | Cited 6 times

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The solid phase epitaxial growth of amorphous silicon implanted with Sb has been investigated by channeling and transmission electron microscopy over a wide Sb concentration range. The amorphous‐crystal interface velocity increases with concentration up to about 5×1020 at/cm3 above which it stops increasing, apparently even slightly decreasing. At these high concentrations, amorphous agglomerates of apparently Sb‐rich regions are formed in the amorphous layer and the amorphous‐crystal interface appears to roughen. It is suggested that these agglomerates are responsible for the decrease in regrowth velocity and are precursors of Sb precipitates observed in the crystalline structure at higher concentration.
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68.55.-a Thin film structure and morphology
61.72.U- Doping and impurity implantation
64.70.K- Solid-solid transitions
81.30.Mh Solid-phase precipitation

Breakdown in silicon oxides (II)—correlation with Fe precipitates

Kouichirou Honda, Akira Ohsawa, and Nobuo Toyokura

Appl. Phys. Lett. 46, 582 (1985); http://dx.doi.org/10.1063/1.95547 (3 pages) | Cited 30 times

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Thin silicon oxides of metal‐oxide‐semiconductor (MOS) capacitors were studied by transmission electron microscopy. The MOS capacitors were fabricated on silicon wafers which had been intentionally contaminated by Fe+ ion implantation. It was found that Fe precipitates crossing the SiO2/Si interface penetrated into the silicon oxide from the silicon substrate. They reduced the breakdown strength by inducing singularity points in the silicon oxide.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.22.Jp Dielectric breakdown and space-charge effects
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
84.32.Tt Capacitors

Ar (3P2) induced chemical vapor deposition of hydrogenated amorphous silicon

Y. Toyoshima, K. Kumata, U. Itoh, K. Arai, A. Matsuda, N. Washida, G. Inoue, and K. Katsuumi

Appl. Phys. Lett. 46, 584 (1985); http://dx.doi.org/10.1063/1.95914 (3 pages) | Cited 14 times

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Energy transfer from metastable argon [Ar (3P2)] to SiH4 was applied to prepare hydrogenated amorphous silicon films. The emission due to the transition of SiH (A2Δ–X2Π) was observed when SiH4 reacted with Ar (3P2). The electric and optical properties of the films were investigated as functions of substrate temperature. The conductivity of the film prepared at 100 °C is 10−10 Ω−1 cm−1 in the dark and 10−5 Ω−1 cm−1 under illumination with a photon flux of 1015 cm−2 s−1. Hydrogen is found to be incorporated into the films mainly in the monohydride configuration even at a substrate temperature as low as 40 °C.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
72.40.+w Photoconduction and photovoltaic effects
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
75.20.Ck Nonmetals
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