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1 Apr 1985

Volume 46, Issue 7, pp. 619-696

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Monolithic integrated receiver front end consisting of a photoconductive detector and a GaAs selectively doped heterostructure transistor

C. Y. Chen, N. A. Olsson, C. W. Tu, and P. A. Garbinski

Appl. Phys. Lett. 46, 681 (1985); http://dx.doi.org/10.1063/1.95528 (3 pages) | Cited 4 times

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We report the first demonstration of a monolithically integrated receiver front end consisting of a GaAs selectively doped heterostructure transistor (SDHT) and a photoconductive detector. Due to its simplicity in the required epitaxial layers and device fabrication, the photoconductive detector/SDHT integration scheme is one of the simplest ever reported. The detector has a measured gain‐bandwidth product of 5 GHz and the SDHT has a transconductance of 100–140 mS/mm. For an error rate of 10−9 at 90 MHz, the receiver has sensitivities at 0.82 μm of −36.2 dBm and −42.2 dBm for pseudorandom patterns and fixed bit patterns of 101010..., respectively, for an uncoated device.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Seed selection through ion channeling to modify crystallographic orientations of polycrystalline Si films on SiO2: Implant angle dependence

K. T‐Y. Kung, R. B. Iverson, and R. Reif

Appl. Phys. Lett. 46, 683 (1985); http://dx.doi.org/10.1063/1.95529 (3 pages) | Cited 12 times

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Polycrystalline silicon films 4800 Å thick deposited by low pressure chemical vapor deposition at 620 °C on oxidized silicon wafers have been amorphized by implantation with 210‐keV Si28 ions to a dose of 1015 cm−2 at 0°, 1°, 3°, 5°, or 7° from normal incidence and subsequently recrystallized at 700 °C. The as‐deposited film was {110} textured with the 〈110〉 directions within ±20° of the surface normal. After the 0°, 1°, or 3° implant and subsequent recrystallization, most of the 〈110〉 directions were confined to within ±4° of the corresponding implant direction. For the 5° and 7° implants, the 〈110〉 directions in the recrystallized layers became randomly oriented; that is, the films lost their {110} texture. These results can be explained by the process of seed selection through ion channeling (SSIC): the grains that survived the 0°, 1°, or 3° implant due to ion channeling acted as seeds during recrystallization. The fact that the direction of the 〈110〉 axes in the recrystallized films was coincident with the implant angle strongly supports the existence of the SSIC process.
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61.72.U- Doping and impurity implantation
68.55.-a Thin film structure and morphology
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Silicon near‐surface disorder and etch residues caused by CCIF3/H2 reactive ion etching

G. S. Oehrlein, C. M. Ransom, S. N. Chakravarti, and Y. H. Lee

Appl. Phys. Lett. 46, 686 (1985); http://dx.doi.org/10.1063/1.95530 (3 pages) | Cited 15 times

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The effects of SiO2 reactive ion etching (RIE) in CClF3/H2 on the surface properties of the underlying Si substrate have been studied by photoemission and He ion scattering/channeling techniques. We find that RIE introduces a F, C, and Cl containing layer on the Si surface. Furthermore, displacement damage is introduced in the Si near‐surface region during RIE processing. The efficacy of O2 plasma or rapid thermal annealing RIE post‐treatments for removal of contamination and/or displacement damage has been investigated.
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81.65.-b Surface treatments
61.80.Jh Ion radiation effects
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Photoluminescence studies of the neutralization of acceptors in silicon by atomic hydrogen

M. L. W. Thewalt, E. C. Lightowlers, and J. I. Pankove

Appl. Phys. Lett. 46, 689 (1985); http://dx.doi.org/10.1063/1.95531 (3 pages) | Cited 50 times

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A number of recent electrical transport studies have shown that low‐temperature treatment in plasmas containing atomic H can neutralize acceptors in Si. We have studied this process by monitoring the bound exciton luminescence associated with the implanted acceptor impurities B, In, and Tl. Treatment in an atomic H plasma was found to substantially reduce the acceptor bound exciton luminescence while leaving unchanged the lines due to an implanted donor, As, thus verifying the conclusions of the transport studies.
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78.40.Fy Semiconductors
71.35.-y Excitons and related phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Photoluminescence of a Cd0.55Mn0.45Te‐CdTe multiple quantum well structure in a magnetic field

A. Petrou, J. Warnock, R. N. Bicknell, N. C. Giles‐Taylor, and J. F. Schetzina

Appl. Phys. Lett. 46, 692 (1985); http://dx.doi.org/10.1063/1.95477 (3 pages) | Cited 21 times

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The photoluminescence of a Cd0.55Mn0.45 Te‐CdTe multiple quantum well structure grown by molecular beam epitaxy has been studied. Both emission and excitation spectra were obtained at T=1.8 K and T=70 K with the specimen in a magnetic field ranging from 0 to 15 T.
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78.40.Fy Semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

High‐precision torsional magnetometer: Application to two‐dimensional electron systems

J. P. Eisenstein

Appl. Phys. Lett. 46, 695 (1985); http://dx.doi.org/10.1063/1.95478 (2 pages) | Cited 21 times

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A dc torsional magnetometer for use in high magnetic fields is described. With a resolution of 10−12 J/T at 5 T and excellent rejection of background moments, this device has been used to study the de Haas–van Alphen effect in two‐dimensional electron systems. This resolution is about 100 times that obtained with a commercially available superconducting quantum interference device magnetometer. The device is useful over a wide temperature range including that below 1 K.
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07.55.-w Magnetic instruments and components
75.30.Cr Saturation moments and magnetic susceptibilities
05.30.Fk Fermion systems and electron gas
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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