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15 Apr 1985

Volume 46, Issue 8, pp. 701-796

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Fast nonlinear optical response from proton‐bombarded multiple quantum well structures

Y. Silberberg, P. W. Smith, D. A. B. Miller, B. Tell, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 46, 701 (1985); http://dx.doi.org/10.1063/1.95479 (3 pages) | Cited 44 times

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Proton bombardment is shown to shorten the recovery time of the excitonic absorption in GaAs/GaAlAs multiple quantum well saturable absorbers. The response time can be reduced from 30 ns to 150 ps without affecting the absorption characteristics or the saturation energy.
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81.40.Tv Optical and dielectric properties related to treatment conditions
61.80.Jh Ion radiation effects
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
71.35.-y Excitons and related phenomena

Single‐mode waveguide microlenses and microlens arrays fabrication in LiNbO3 using titanium indiffused proton exchange technique

D. Y. Zang and C. S. Tsai

Appl. Phys. Lett. 46, 703 (1985); http://dx.doi.org/10.1063/1.95480 (3 pages) | Cited 20 times

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Single‐mode planar waveguide microlenses and microlens arrays in LiNbO3 have been fabricated using a combination of titanium diffusion and proton exchange processes. The lenses have demonstrated properties such as very short focal length, micron focal spot size, and large angular field of view that are desirable for applications in integrated and fiber‐optic signal processing and computing as well as communication systems.
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42.86.+b Optical workshop techniques
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.81.-i Fiber optics

Chalcogenide hollow fibers for infrared energy transmission

A. Bornstein, N. Croitoru, and A. Seidman Materials & Electromagnetic Radiation

Appl. Phys. Lett. 46, 705 (1985); http://dx.doi.org/10.1063/1.95481 (3 pages) | Cited 4 times

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Chalcogenide glass hollow fibers were fabricated. The fibers are small, light, and flexible and can transmit CO2 laser light as well as visible light. Their attenuation remains constant even when bent to small radii of 2 cm. The fibers can transmit high power density (0.5 kW/cm2) in a small spot size (100 μm) of light.
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42.81.-i Fiber optics
42.70.Ce Glasses, quartz
87.80.-y Biophysical techniques (research methods)
42.79.Gn Optical waveguides and couplers

Light propagation and acousto‐optic interaction in a LiNbO3 spherical waveguide

Q. Li, C. S. Tsai, S. Sottini, and C. C. Lee

Appl. Phys. Lett. 46, 707 (1985); http://dx.doi.org/10.1063/1.95482 (3 pages) | Cited 5 times

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Propagation, guiding, collimation, and focusing of a light beam at 6328‐Å wavelength in a LiNbO3 spherical waveguide as well as acousto‐optic diffraction in such a waveguide using the surface acoustic wave centering at 245 MHz have been accomplished for the first time. Near diffraction‐limited characteristics were measured in the incident light and the diffracted light was shown to preserve this desirable characteristic. Light beam scanning and various rf signal processing experiments including spectral analysis, correlation, and convolution were carried out with encouraging results. The potential advantages of the resultant spherical waveguide acousto‐optic signal processor modules over the planar waveguide counterparts are also discussed.
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42.79.Gn Optical waveguides and couplers
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography

Enhancement of optical nonlinearity in p‐type semiconductor quantum wells due to confinement and stress

Yia‐Chung Chang

Appl. Phys. Lett. 46, 710 (1985); http://dx.doi.org/10.1063/1.95483 (3 pages) | Cited 17 times

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It is shown that large values of the third‐order nonlinear susceptibility χ(3) can be obtained in p‐type semiconductor quantum wells (e.g., GaInAs‐AlInAs) due to strong valence‐band nonparabolicity. The strong nonparabolicity in valence bands arises from the mixing of heavy and light hole states via quantum well potential. It is further shown that stress can modify χ(3) substantially.
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75.20.Ck Nonmetals
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
42.65.-k Nonlinear optics

Noble‐metal‐based transparent infrared reflectors: Improved performance caused by nonhomogeneous film structure

G. A. Niklasson and C. G. Granqvist

Appl. Phys. Lett. 46, 713 (1985); http://dx.doi.org/10.1063/1.95484 (3 pages) | Cited 5 times

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The radiative properties of nonhomogeneous Au films with a continuous metal network were investigated by computations based on effective medium theories. The inhomogeneities were found to be conducive to high transmittance of solar energy, particularly in the near infrared, while the thermal emittance was not significantly increased. The favorable film structure leads to a conspicuous onset of transmittance at a wavelength which depends on the characteristic shapes of the structural units.
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78.66.Bz Metals and metallic alloys
78.40.Kc Metals, semimetals, and alloys
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Very thin gold films produced with ion plating for improved transparent infrared reflectors

G. B. Smith

Appl. Phys. Lett. 46, 716 (1985); http://dx.doi.org/10.1063/1.95485 (3 pages) | Cited 4 times

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Semitransparent gold films under 10 nm thick were produced with ion plating onto glass and were shown to give improvements, depending on thickness, for either solar control or transparent heat‐mirror applications relative to conventional deposits. Film inhomogeneities, modified gold optical constants, and ion‐beam assisted onset of film coalescence all play an important role. An anomalously large frequency dependence of conduction electron relaxation time was identified in a continuous film from a Drude analysis.
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78.66.Bz Metals and metallic alloys
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.55.-a Thin film structure and morphology

Submicron‐gap high‐mobility silicon picosecond photodetectors

Ghavam G. Shahidi, E. P. Ippen, and J. Melngailis

Appl. Phys. Lett. 46, 719 (1985); http://dx.doi.org/10.1063/1.95486 (3 pages)

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High‐speed photoconductive switching in silicon is achieved, without a reduction in mobility or lifetime, by carrier sweep‐out. Using photoconductive gaps ranging in width from 14 to 0.22 μm, we have studied the variation of switching speed with gap dimension and applied voltage. With submicron gaps and optical energies of less than 1 nJ, we have been able to switch pulses of more than 1 V with durations as short as 27 ps full width at half‐maximum.
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72.40.+w Photoconduction and photovoltaic effects
72.20.Ht High-field and nonlinear effects
85.60.Gz Photodetectors (including infrared and CCD detectors)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Effective constants for wave propagation through partially saturated porous media

James G. Berryman and Lewis Thigpen

Appl. Phys. Lett. 46, 722 (1985); http://dx.doi.org/10.1063/1.95487 (3 pages) | Cited 5 times

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The multipole scattering coefficients for elastic wave scattering from a spherical inhomogeneity in a fluid‐saturated porous medium have been calculated. These coefficients may be used to obtain estimates of the effective macroscopic constants for long‐wavelength propagation of elastic waves through partially saturated media. If the volume average of the single scattering from spherical bubbles of gas and liquid is required to vanish, the resulting equations determine the effective bulk modulus, density, and viscosity of the multiphase fluid filling the pores. The formula for the effective viscosity during compressional wave excitation is apparently new.
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62.30.+d Mechanical and elastic waves; vibrations
91.60.Ba Elasticity, fracture, and flow
41.20.Jb Electromagnetic wave propagation; radiowave propagation
43.20.Fn Scattering of acoustic waves

Optical monitoring of photoacoustic pulse propagation in silicon wafers

H. Sontag and A. C. Tam

Appl. Phys. Lett. 46, 725 (1985); http://dx.doi.org/10.1063/1.95488 (3 pages) | Cited 25 times

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We demonstrate a new optical and noncontact method for direct and fast detection of photoacoustic pulse propagation in thin silicon wafers. A probe beam deflection technique is used to monitor both longitudinal and Lamb wave propagations from which information on the elastic constants and the sample orientation can be obtained. Results obtained for wafers of different orientations and doping levels are compared with previous contact measurements.
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43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
62.20.D- Elasticity
07.60.-j Optical instruments and equipment
42.62.-b Laser applications

High‐power second harmonic emission and frequency locking in a 28‐GHz gyrotron

B. G. Danly, W. J. Mulligan, R. J. Temkin, and T. C. L. G. Sollner

Appl. Phys. Lett. 46, 728 (1985); http://dx.doi.org/10.1063/1.95489 (3 pages) | Cited 9 times

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Two important new results are presented from a study of second harmonic (2ωc) emission from a pulsed gyrotron designed for fundamental (ωc) emission of 200 kW at 28 GHz in the TE021 mode. Simultaneous output at ω1≊ωc and ω2≊2ωc, with the condition ω2=2ω1 applying as ω1 was varied, has been observed for the first time. Strong, single mode 2ωc emission (80 kW at 50 GHz) is also observed, and such emission is shown to be characteristic of gyrotrons designed for high‐power emission at the fundamental.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)
52.35.Hr Electromagnetic waves (e.g., electron-cyclotron, Whistler, Bernstein, upper hybrid, lower hybrid)
52.70.Gw Radio-frequency and microwave measurements

Subnanosecond x‐ray framing camera

N. Finn, T. A. Hall, and E. McGoldrick

Appl. Phys. Lett. 46, 731 (1985); http://dx.doi.org/10.1063/1.95490 (3 pages) | Cited 11 times

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A subnanosecond x‐ray framing camera is described. Experiments conducted at the Rutherford Appleton Laboratory in which the camera was used to observe six beam laser implosions of microballoons with an interframe time of 500 ps are also described.
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52.70.La X-ray and γ-ray measurements
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
07.68.+m Photography, photographic instruments; xerography
07.85.-m X- and γ-ray instruments

Reversibility and stability of tellurium alloys for optical data storage applications

M. Chen, K. A. Rubin, V. Marrello, U. G. Gerber, and V. B. Jipson

Appl. Phys. Lett. 46, 734 (1985); http://dx.doi.org/10.1063/1.95491 (3 pages) | Cited 37 times

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We demonstrate for the first time that Te87Ge8Sn5 films, which are amorphous as deposited, can be optically switched between the crystalline and amorphous states more than 106 times. The measured reflectivity changed from 40% to 60% and the transmission changed from 3% to 1.5%, respectively, between the amorphous and crystalline states. The crystallization temperature of the cycled spots is ≊75 °C and these spots are observable after >20 weeks. It is found that the crystallization temperature of cycled spots is typically about 20 °C lower than that of the unwritten film. Increasing the Ge concentration leads to increased crystallization temperature and increased minimum crystallization time without affecting reversibility.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
81.40.Tv Optical and dielectric properties related to treatment conditions
64.70.D- Solid-liquid transitions
78.66.Bz Metals and metallic alloys

Platinum gettering in silicon by phosphorus

Robert Falster

Appl. Phys. Lett. 46, 737 (1985); http://dx.doi.org/10.1063/1.95492 (3 pages) | Cited 14 times

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The gettering capture of certain metallic impurities (especially Au) is known to be associated with enhanced solubility in the presence of high concentration phosphorus. Platinum is a metal whose diffusion characteristics closely resemble that of gold. It is likewise a deep acceptor in n‐type silicon. One might therefore expect its gettering behavior also to be similar. Experiments described here show this not the case. Platinum was indeed found to be gettered effectively by phosphorus though on nonsubstitutional sites at the sample surface. This is explained to be a supersaturation of silicon self‐interstitials induced by the diffusion of phosphorus which kicks platinum onto high mobility, low solubility interstitial sites. The possible relevance of this solubility supression mechanism for Au gettering is discussed.
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66.30.J- Diffusion of impurities
61.72.jd Vacancies
61.72.jj Interstitials

Amorphous carbon coatings prepared by high rate rf plasma deposition from fluorinated benzenes

R. E. Sah, B. Dischler, A. Bubenzer, and P. Koidl

Appl. Phys. Lett. 46, 739 (1985); http://dx.doi.org/10.1063/1.95493 (3 pages) | Cited 36 times

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Amorphous carbon films were prepared by radio frequency plasma deposition from benzene and fluorinated benzenes: C6H6−mFm with m=0–6. The films have been characterized spectroscopically. The infrared spectrum shows that besides hydrogen, fluorine is incorporated in the films. With increasing m the concentration of fluorine in the film increases while the amount of chemically bonded hydrogen decreases and vanishes for m>3. The properties of these hydrogenated fluorinated amorphous carbon films (a‐C:H,F) are qualitatively similar to those of hard carbon coatings (a‐C:H) prepared from benzene. However, the deposition rate has been found to rise significantly (up to 900 nm min−1) with increasing fluorine content, m, in the substituted benzene. Optical data and protective properties of the films are reported.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
75.20.Ck Nonmetals
81.65.-b Surface treatments
42.79.Wc Optical coatings

Selective area growth of GaAs and In0.53Ga0.47As epilayer structures by chemical beam epitaxy using silicon shadow masks: A demonstration of the beam nature

W. T. Tsang

Appl. Phys. Lett. 46, 742 (1985); http://dx.doi.org/10.1063/1.95911 (3 pages) | Cited 11 times

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Selective area growth of GaAs and In0.53Ga0.47As epilayer structure with well‐defined smooth edges has been achieved with a Si mask shadowing technique for chemical beam epitaxy (CBE). Epilayer stripes with widths as narrow as 2–5 μm have been replicated. An experiment was also conducted to unequivocally establish the beam nature of CBE and the absence of a stagnant gas boundary layer above the substrate surface during growth which is present in both atmospheric and low‐pressure metalorganic chemical vapor deposition.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Bias‐dependent photoluminescence of InP in aqueous iodine solutions

A. Etcheberry, J. Gautron, and J. L. Sculfort

Appl. Phys. Lett. 46, 744 (1985); http://dx.doi.org/10.1063/1.95494 (3 pages) | Cited 6 times

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In situ photoluminescence measurements were used to explain the behavior of the n‐InP/electrolyte junction when iodide‐iodine redox couple is added to an acid aqueous medium. Adsorption of iodine atoms on the surface of InP drastically reduces the forward‐bias luminescence intensity. Luminescence recovery occurs after a large reverse polarization is able, through a photodissolution, to eliminate the adsorbed iodine atoms.
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73.40.Mr Semiconductor-electrolyte contacts
78.55.Bq Liquids
78.40.Fy Semiconductors
72.40.+w Photoconduction and photovoltaic effects

High‐speed ellipsometry of arsenic‐implanted Si during cw laser annealing

A. Moritani and C. Hamaguchi

Appl. Phys. Lett. 46, 746 (1985); http://dx.doi.org/10.1063/1.95495 (3 pages) | Cited 7 times

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Ellipsometric study of solid phase epitaxial growth during cw Ar‐ion laser annealing in arsenic‐implanted Si is reported for the first time. Use of a high‐speed microscopic ellipsometer has made it possible to measure growth rates and growth temperature under laser irradiation.
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68.55.-a Thin film structure and morphology
07.60.Fs Polarimeters and ellipsometers
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

High‐speed InP optoelectronic switch with a tandem structure

Yoshikazu Hori, Joel Paslaski, Maobin Yi, and Amnon Yariv

Appl. Phys. Lett. 46, 749 (1985); http://dx.doi.org/10.1063/1.95912 (3 pages) | Cited 4 times

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A tandem‐structure InP‐optoelectronic switch has been fabricated and studied. This optoelectronic switch is capable of generating short electrical pulses, as well as varying the duration of electrical pulses between 40 and 400 ps (full width at half‐maximum). The duration of the electrical pulses and the shortest pulse limit of the new switch are analyzed using a simple electrical model, and good agreement with experimental results has been obtained. The results indicate that the tandem‐structure, optoelectronic switch can produce electrical pulses as short as the rise time of a single‐structure switch, which is determined only by the electrical circuit time constant of the parallel switch capacitance and transmission line impedance.
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84.32.Dd Connectors, relays, and switches
72.40.+w Photoconduction and photovoltaic effects
85.60.-q Optoelectronic devices

Doping level selective photochemical dry etching of GaAs

C. I. H. Ashby

Appl. Phys. Lett. 46, 752 (1985); http://dx.doi.org/10.1063/1.95496 (3 pages) | Cited 19 times

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The first observation of a highly selective photochemical dry etching process which discriminates between semiconductor materials differing in dopant concentrations by less than a factor of 5 is reported here. A photochemical reaction of GaAs with gas phase reactive Cl species occurs when the surface is irradiated with low‐intensity light of band gap or greater quantum energies. Application of an appropriate negative bias to a GaAs sample can almost totally suppress the photochemical reaction of heavily doped n‐GaAs, while less heavily doped n‐GaAs or p‐GaAs continue to etch at undiminished rates under the same conditions. This is the first reported etching process to produce greater than 20:1 selectivity for doping levels differing by less than a factor of 5. A mechanism which may explain the origin of the photochemical reaction and the voltage‐controlled doping level selectivity which it displays is presented here. The potential significance of these observations for other semiconductor materials, such as Si, is discussed.
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81.65.-b Surface treatments
82.50.-m Photochemistry
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Photoluminescence measurements of band discontinuity in InP‐InGaPAs heterostructures

P. E. Brunemeier, D. G. Deppe, and N. Holonyak

Appl. Phys. Lett. 46, 755 (1985); http://dx.doi.org/10.1063/1.95497 (3 pages) | Cited 15 times

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Photoluminescence data on liquid phase epitaxial single‐well quantum well heterostructures are presented that permit the determination of the valence‐band discontinuity ΔEv in InP‐In1−xGaxP1−yAsy heterostructures at several quaternary compositions matched to InP [x≊0.453y(1+0.031y)]. The ΔEv determination, which depends on a hot‐electron to bound‐hole recombination transition, indicates that ΔEv ≊0.35ΔEg and ΔEc ≊0.65ΔEg for all InGaAsP compositions lattice matched to InP.
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71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.40.Fy Semiconductors
85.30.De Semiconductor-device characterization, design, and modeling

Reversal of contrast for infrared absorption of deep levels in semi‐insulating GaAs

Hans J. Queisser

Appl. Phys. Lett. 46, 757 (1985); http://dx.doi.org/10.1063/1.95498 (3 pages) | Cited 3 times

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A new interpretation is offered for the observed reversal of contrast in the infrared absorption of nonuniformly distributed deep centers, related to EL2, in large‐diameter, liquid‐encapsulation‐grown, semi‐insulating GaAs. In the photoquenched state, having reversed contrast, the absorption originates in electrons, having been transferred from spatially clustered deep centers onto shallow centers adjacent to these clusters. Transfer is achieved by photon absorption and subsequent removal via the built‐in electric fields, generated by the clustering of the deep centers.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Muonium as a probe for defects in electron irradiated silicon

E. Albert, S. Barth, A. Möslang, E. Recknagel, A. Weidinger, and P. Moser

Appl. Phys. Lett. 46, 759 (1985); http://dx.doi.org/10.1063/1.95499 (3 pages) | Cited 2 times

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Electron irradiated silicon was investigated by the muon spin rotation (μSR) technique. We found a strong correlation between the muon spin relaxation rate and the annealing behavior of irradiation induced defects (E and A centers).
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61.72.jd Vacancies
61.72.jj Interstitials
76.90.+d Other topics in magnetic resonances and relaxations (restricted to new topics in section 76)
79.20.Kz Other electron-impact emission phenomena
61.80.Fe Electron and positron radiation effects

Reduction of fast interface states and suppression of drift phenomena in arsenic‐stabilized metal‐insulator‐InP structures

R. Blanchet, P. Viktorovitch, J. Chave, and C. Santinelli

Appl. Phys. Lett. 46, 761 (1985); http://dx.doi.org/10.1063/1.95500 (3 pages) | Cited 14 times

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A significant improvement of the electronical properties of metal‐Al2O3‐InP structures is obtained after treating InP substrates at 500 °C in an As overpressure (10−6 Torr). The density of fast interface states near the conduction‐band edge is markedly reduced and drift phenomena are greatly suppressed, as compared to results obtained with chemically etched reference substrates. An interpretation of these effects is given based on the compensation of phosphorus vacancies by As atoms more strongly attached to the InP surface than P atoms.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.De Semiconductor-device characterization, design, and modeling

Warm electron system in the n‐AlGaAs/GaAs two‐dimensional electron gas

Kotaro Tsubaki, Akira Sugimura, and Kenji Kumabe

Appl. Phys. Lett. 46, 764 (1985); http://dx.doi.org/10.1063/1.95501 (3 pages) | Cited 10 times

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The energy relaxation time τϵ and the critical electron temperature Tc in the warm electron system of the AlGaAs/GaAs two‐dimensional electron gas is studied. The critical electron temperature Tc is defined as the electron temperature where the electric field dependence of the electron mobility begins to have a higher term than the quadric term. Simple formulas are presented for giving τϵ and Tc from the warm electron experimental results. The calculated values of τϵ agree with the other reported results. The experimental relation between the lattice temperature T and the critical electron temperature Tc is expressed as Tc=1.5 T.
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72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors
72.20.Dp General theory, scattering mechanisms
72.20.Fr Low-field transport and mobility; piezoresistance
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