APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 Apr 1985

Volume 46, Issue 8, pp. 701-796

Page 2 of 2 Pages Previous Page | Jump to Page

Schottky barrier diodes on 3C‐SiC

S. Yoshida, K. Sasaki, E. Sakuma, S. Misawa, and S. Gonda

Appl. Phys. Lett. 46, 766 (1985); http://dx.doi.org/10.1063/1.95502 (3 pages) | Cited 53 times

Full Text: | Download PDF

Show Abstract
Schottky barrier contacts have been made on n‐type 3C‐SiC epitaxially grown by chemical vapor deposition, and their characteristics were studied by the capacitance and photoresponse measurements. By evaporating Au onto chemically etched surfaces of 3C‐SiC, good quality Schottky barrier junctions have been obtained. The barrier height determined by the capacitance measurements is 1.15 (±0.15) eV, while the height by the photoresponse measurements is 1.11 (±0.03) eV. These values are about a half of the energy band gap Eg at room temperature.
Show PACS
73.30.+y Surface double layers, Schottky barriers, and work functions
72.40.+w Photoconduction and photovoltaic effects
73.40.Cg Contact resistance, contact potential
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Valence‐band discontinuities at AlAs‐based heterojunction interfaces

M. K. Kelly, D. W. Niles, E. Colavita, G. Margaritondo, and M. Henzler

Appl. Phys. Lett. 46, 768 (1985); http://dx.doi.org/10.1063/1.95503 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
We extended our empirical method for estimating heterojunction band discontinuities to systems containing AlAs. The necessary data were provided by a synchrotron‐radiation photoemission study of the AlAs‐Ge interface formation. Our results suggest that the ‘‘15%–85%’’ rule deduced for Ga1−xAlxAs‐GaAs cannot be extrapolated to AlAs‐GaAs.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.-b Surface treatments

New method of measuring relaxation times in semiconductors

P. Mukherjee, M. Sheik‐Bahaei, and H. S. Kwok

Appl. Phys. Lett. 46, 770 (1985); http://dx.doi.org/10.1063/1.95905 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
A new method of measuring relaxation times of free carriers in semiconductors is proposed and demonstrated. It is based on the pulse duration dependence of free‐carrier absorption through the sample. This method has been demonstrated with GaAs and InSb.
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
42.62.-b Laser applications
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Ultraviolet (193 nm) laser‐induced oxygen exchange and bulk diffusion in gallium arsenide native oxides: 18O experiments

J. Siejka, J. Perriere, and R. Srinivasan

Appl. Phys. Lett. 46, 773 (1985); http://dx.doi.org/10.1063/1.95906 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Pulsed laser irradiation (193 nm, t=14 ns) at low fluence (0.045 J/cm2) of GaAs 18O enriched native oxides leads to a very efficient oxygen exchange between 18O in the oxides and 16O coming from the surrounding atmosphere. 1000 laser pulses caused a complete exchange of oxygen from an oxide layer of ∼30‐nm thickness. This showed a very high rate of oxygen self‐diffusion under laser irradiation although the total oxygen content in the oxide was preserved. As this process is believed to have a threshold fluence, a model based on the hole‐pair mechanism of Itoh and Nakayama [Phys. Lett. A 92, 471 (1982)] is suggested. Preferential loss of As and preferential oxidation of Ga are also observed to some extent.
Show PACS
79.20.Ds Laser-beam impact phenomena
66.30.H- Self-diffusion and ionic conduction in nonmetals
82.50.Hp Processes caused by visible and UV light
81.65.-b Surface treatments

18.7% efficient (1‐sun, AM0) large‐area GaAs solar cells

J. G. Werthen, H. C. Hamaker, G. F. Virshup, and C. W. Ford

Appl. Phys. Lett. 46, 776 (1985); http://dx.doi.org/10.1063/1.95927 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
AlGaAs‐GaAs heteroface solar cells with areas of 4 cm2 have been fabricated by metalorganic chemical vapor deposition. One‐sun, AM0 efficiencies as high as 18.7% and 18.4% have been obtained for p‐n and n‐p structures, respectively. Both kinds of cell structures are characterized by excellent external quantum efficiencies and their performance is close to that predicted by a realistic computer model. In agreement with the computer model, the n‐p cell exhibits a higher short‐circuit current density because of its thin, n‐type top absorber.
Show PACS
84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects

Polycrystalline CuInSe2 photoelectrochemical cells

D. Haneman and J. Szot

Appl. Phys. Lett. 46, 778 (1985); http://dx.doi.org/10.1063/1.95907 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
Photoelectrochemical cells with short term stability (at least) have been constructed from fracture surfaces of n‐type polycrystalline boules of CuInSe2. The recently developed electrolyte of Menezes [Appl. Phys. Lett. 45, 148 (1984)] appeared to have a passivating effect on grain boundaries. Samples with hundreds of boundaries easily attained half the best (12%) single crystal efficiency without any optimization. Microprobe analyses of the treated surfaces showed strong depletion of Cu and incorporation of I but the latter distribution appeared to be nonuniform. Poor fill factors were found on randomly fractured surfaces larger than 1 cm2. Only n‐type samples were successful.
Show PACS
73.40.Mr Semiconductor-electrolyte contacts
72.40.+w Photoconduction and photovoltaic effects
82.47.-a Applied electrochemistry

Photoresponse of the AsGa antisite defect in as‐grown GaAs

M. Baeumler, U. Kaufmann, and J. Windscheif

Appl. Phys. Lett. 46, 781 (1985); http://dx.doi.org/10.1063/1.95908 (3 pages) | Cited 53 times

Full Text: | Download PDF

Show Abstract
The photoresponse of the As+Ga antisite electron‐paramagnetic‐resonance (EPR) has been studied in as‐grown semi‐insulating GaAs as a function of illumination time and photon energy hν. The As+Ga EPR signal intensity changes are nonmonotonic in time in the range 1.1≲hν≲1.4 eV. The spectral dependences of As+Ga enhancement and quenching show distinct similarities with the EL2 optical cross sections σ0n (hν) and σ0p (hν), respectively. These results demonstrate that the EL2 defect and the AsGa antisite have practically identical optical and photoelectronic properties.
Show PACS
61.72.J- Point defects and defect clusters
78.40.Fy Semiconductors
76.30.Mi Color centers and other defects

Kinetics of thermal nitridation processes in the study of dopant diffusion mechanisms in silicon

P. Fahey, G. Barbuscia, M. Moslehi, and R. W. Dutton

Appl. Phys. Lett. 46, 784 (1985); http://dx.doi.org/10.1063/1.95909 (3 pages) | Cited 101 times

Full Text: | Download PDF

Show Abstract
The changes in diffusion rates of Sb, As, and P resulting from nitridation of SiO2 and direct nitridation of the silicon surface in NH3 ambient at 1100 °C are studied for times ranging from 7 min to 4.5 h. From analysis of these data we conclude that P must diffuse almost entirely by an interstitialcy mechanism at this temperature, and that previous formulations of dopant diffusion under nonequilibrium conditions may not be complete. We also determine that the effects seen during direct nitridation are better explained by a pure vacancy injection process than a pure self‐interstitial depletion process, contrary to previous assertions by us and others.
Show PACS
66.30.J- Diffusion of impurities
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
61.72.jd Vacancies
61.72.jj Interstitials

Absence of oxygen diffusion during hydrogen passivation of shallow‐acceptor impurities in single‐crystal silicon

N. M. Johnson and M. D. Moyer

Appl. Phys. Lett. 46, 787 (1985); http://dx.doi.org/10.1063/1.95883 (3 pages) | Cited 69 times

Full Text: | Download PDF

Show Abstract
It was recently proposed that hydrogen compensation of shallow‐acceptor impurities in single‐crystal silicon is due to the diffusion of both monatomic oxygen and hydrogen into silicon which combine at acceptor sites to form neutral acceptor‐OH complexes. It is shown here that oxygen does not diffuse into silicon under the conditions of shallow‐acceptor passivation. Boron‐doped silicon was exposed to monatomic deuterium and mass 18 oxygen at elevated temperatures. Depth profiles of D and 18O were measured by secondary‐ion mass spectrometry for comparison with the boron concentration. While D readily diffuses into silicon with the concentration nearly equal to that of the boron, no 18O was detectable above the background level. Deuterium profiles in both phosphorus‐doped and boron‐doped silicon further reveal high densities of deuterium, in excess of the boron concentration, which are ascribed to diffusing monatomic deuterium and deuterium that is immobilized through recombination and impurity trapping.
Show PACS
66.30.J- Diffusion of impurities
81.65.-b Surface treatments
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Hot‐pressed neodymium‐iron‐boron magnets

R. W. Lee

Appl. Phys. Lett. 46, 790 (1985); http://dx.doi.org/10.1063/1.95884 (2 pages) | Cited 132 times

Full Text: | Download PDF

Show Abstract
A new method is described which produces fully dense, well‐aligned Nd‐Fe‐B magnets from rapidly quenched ribbons. Full density is achieved by hot pressing at ∼15 kpsi in argon at 700 °C. A second hot press in a larger die cavity to allow deformation transverse to the press direction (die upsetting) introduces a preferred magnetization direction parallel to the press direction. Energy products of 40 MGOe (Br/Hci=13.5 kG/11 kOe) have been generated by this method.
Show PACS
07.55.Db Generation of magnetic fields; magnets
85.70.-w Magnetic devices
75.50.Kj Amorphous and quasicrystalline magnetic materials
81.40.Rs Electrical and magnetic properties related to treatment conditions

FexN thin films with perpendicular magnetic anisotropy

Seiichi Asada and Masahiro Kitada

Appl. Phys. Lett. 46, 792 (1985); http://dx.doi.org/10.1063/1.95885 (2 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
FexN(x=2–3) thin films with perpendicular magnetic anisotropy are prepared by rf sputtering. Although conventional rf sputtered FexN films are magnetized in the direction of the film plane, dc biasing of the substrate during rf sputtering produces magnetic anisotropy normal to the film plane.
Show PACS
75.30.Gw Magnetic anisotropy
75.50.Bb Fe and its alloys
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.50.Vv High coercivity materials

Selective interhalogen etching of tantalum compounds and other semiconductor materials

D. E. Ibbotson, J. A. Mucha, D. L. Flamm, and J. M. Cook

Appl. Phys. Lett. 46, 794 (1985); http://dx.doi.org/10.1063/1.95886 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
We find that gaseous ClF3 is an effective and selective etchant for a variety of transition metals and metal compounds. Kinetics were studied for etching α‐Ta (13–16 atom % N), Ta2N, and Ta2O5 in this gas, as a function of temperature and pressure, to provide effective activation energies of 4.0, 4.4, 7.7 kcal/mole, respectively. Relative etch rates measured in CF4/O2 and NF3 plasmas indicate that ClF3 gaseous etching has more than an order of magnitude better selectivity for nonoxidic metal compounds over the corresponding oxide. At 100 °C, selectivity for etching α‐Ta or Ta2N over Ta2O5 is more than 160:1. Other materials used in semiconductor manufacture, such as SixNy, W, TaSi2, and photoresist, were also briefly surveyed and the results suggest ClF3 holds promise for isotropic etching applications that require high selectivity.
Show PACS
81.05.Bx Metals, semimetals, and alloys
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
Page 2 of 2 Pages Previous Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close