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1 May 1985

Volume 46, Issue 9, pp. 801-902

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Ultrafast carrier and grating lifetimes in semiconductor‐doped glasses

S. S. Yao, C. Karaguleff, A. Gabel, R. Fortenberry, C. T. Seaton, and G. I. Stegeman

Appl. Phys. Lett. 46, 801 (1985); http://dx.doi.org/10.1063/1.95887 (2 pages) | Cited 106 times

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The time dependence of both the photoluminescence due to carrier recombination and the gratings created by degenerate four‐wave mixing were measured in semiconductor‐doped color‐filter glasses. Values ranging from 80 to less than 16 ps (laser pulse width limited) are measured in several different samples at various excitation levels. A slower mechanism, believed to be thermal in nature, is also observed with a lifetime in excess of 9 ns.
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42.70.Ce Glasses, quartz
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
42.79.Ci Filters, zone plates, and polarizers
42.79.Dj Gratings

High‐power index‐guided multiridge waveguide laser array

N. K. Dutta, L. A. Koszi, B. P. Segner, D. C. Craft, and S. G. Napholtz

Appl. Phys. Lett. 46, 803 (1985); http://dx.doi.org/10.1063/1.95888 (2 pages) | Cited 3 times

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InGaAsP quasi‐index‐guided multiridge waveguide laser arrays emitting at 1.3 μm have been fabricated. The lasers have threshold currents in the range 300–400 mA at 30 °C and have been operated to pulsed output powers as high as 500 mW. More than 150 mW of output power has been obtained up to an ambient temperature of 60 °C. The lasers emit in multilongitudinal mode with a far‐field divergence of ∼15°×45°. A quasi‐index‐guided laser array of the type described here can be used in applications requiring high‐power lasers emitting at 1.3 μm.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

A semiconductor laser with a converging output beam

S. Mukai, H. Yajima, M. Watanabe, H. Itoh, Y. Takabe, and Y. Tsunekawa

Appl. Phys. Lett. 46, 805 (1985); http://dx.doi.org/10.1063/1.95889 (2 pages) | Cited 5 times

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Semiconductor lasers with converging output beams are reported for the first time. The lasers have a low‐gain region on the center of the mesa stripe near one cleaved facet. The low‐gain region distorts the phase front of the guided light and beam convergence results. The width of the laser beam in the direction parallel to the junction plane decreases with distance from 30 μm at the facet down to 7 μm at 111 μm off the facet. Moreover, the one‐dimensional optical power density increases with distance in accordance with the decrease in beam width.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.82.-m Integrated optics
42.79.Bh Lenses, prisms and mirrors
42.79.Fm Reflectors, beam splitters, and deflectors

Monolithic integration of AlGaAs/GaAs laser and external mirrors

J. Berger and D. Fekete

Appl. Phys. Lett. 46, 806 (1985); http://dx.doi.org/10.1063/1.95890 (3 pages) | Cited 3 times

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A monolithic integration of AlGaAs/GaAs Be‐implanted laser and external mirrors was demonstrated. The mirrors of the laser and the external mirrors were produced using a microcleaving facets process. Results emphasize stabilization of the longitudinal mode spectrum by the external cavity action.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.60.-q Optoelectronic devices
42.82.-m Integrated optics

Wide‐bandwidth guided‐wave electro‐optic intensity modulator at λ=3.39 μm

R. A. Becker, R. H. Rediker, and T. A. Lind

Appl. Phys. Lett. 46, 809 (1985); http://dx.doi.org/10.1063/1.95891 (3 pages) | Cited 7 times

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A Ti‐indiffused guided‐wave interferometric modulator has been demonstrated at λ=3.39 μm with a linear small‐signal 3‐dB bandwidth of 1.8 GHz. This is the first interferometric modulator operating at λ>1.6 μm. An extinction ratio of 18.9 dB was obtained with Vπ=31 V for TE‐polarized radiation. This value of Vπ is consistent with predictions based upon λ=0.85 μm modulator data and simple λ2 scaling rules, indicating little dispersion in the electro‐optical coefficients of LiNbO3 over the 0.85–3.39‐μm region. Such modulators are important components for the long‐distance repeaterless data links which is the goal of the large effort in the development of ultra‐low‐loss fibers at the longer wavelengths.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Hybrid growth of InGaAsP double‐channel planar buried heterostructure lasers

H. Temkin, M. B. Panish, R. A. Logan, and J. H. Abeles

Appl. Phys. Lett. 46, 811 (1985); http://dx.doi.org/10.1063/1.95892 (3 pages) | Cited 4 times

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Separate confinement InGaAsP structures grown by gas‐source molecular beam epitaxy have been used in conjunction with liquid phase epitaxial regrowth to fabricate high‐performance buried heterostructure lasers operating at a wavelength of 1.52–1.55 μm. These lasers show room‐temperature threshold currents as low as 17 mA, external quantum efficiency as high as 27% per facet, and modulation bandwidth of 1.7–2.0 GHz. Single longitudinal mode operation under cw injection can be maintained up to 8 mW.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Intramode correlation spectroscopy: A new method to study line broadening mechanisms in semiconductor lasers

W. Elsässer and E. O. Göbel

Appl. Phys. Lett. 46, 814 (1985); http://dx.doi.org/10.1063/1.95893 (3 pages) | Cited 1 time

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A new experimental method is presented to investigate correlations of intensity and phase fluctuations within the spectral bandwidth of one longitudinal mode of a semiconductor laser. This intramode correlation spectroscopy can be applied to study the physical processes which contribute to the linewidth of a semiconductor laser. First results for a GaAs/GaAlAs oxide stripe laser reveal the contribution of a low‐frequency jitter of the lasing wavelength to the mode linewidth.
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42.55.Px Semiconductor lasers; laser diodes
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Thin‐film waveguide magneto‐optic isolator

R. Wolfe, J. Hegarty, J. F. Dillon, L. C. Luther, G. K. Celler, L. E. Trimble, and C. S. Dorsey

Appl. Phys. Lett. 46, 817 (1985); http://dx.doi.org/10.1063/1.95894 (3 pages) | Cited 21 times

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A thin‐film waveguide Faraday rotator which provides nonreciprocal polarization rotation of ±45° for light of wavelength 1.45 μm with an extinction ratio of 500:1 has been demonstrated. This isolator structure makes use of laser annealing to reverse the sublattice magnetization and hence the sign of the Faraday effect in localized regions of a (Bi, Ga) yttrium iron garnet film. A novel geometrical pattern was designed for these regions to overcome the effects of the inherent thin‐film birefringence.
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78.20.Ls Magneto-optical effects
42.79.Gn Optical waveguides and couplers
85.60.-q Optoelectronic devices
85.70.-w Magnetic devices

Room‐temperature optical bistability in InGaAsP/InP amplifiers and implications for passive devices

W. F. Sharfin and M. Dagenais

Appl. Phys. Lett. 46, 819 (1985); http://dx.doi.org/10.1063/1.95895 (3 pages) | Cited 19 times

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Optical bistability has been observed for the first time in a room‐temperature InGaAsP/InP amplifier. Switching occurred at an optical input power of about 3 μW, corresponding to a change in the refractive index of 5×10−4. The results are discussed in terms of a light‐induced change in carrier concentration. Implications for bistability in passive devices are also discussed.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
78.20.Jq Electro-optical effects
85.60.-q Optoelectronic devices

External field enhanced optical bistability in nematic liquid crystals

Hiap Liew Ong

Appl. Phys. Lett. 46, 822 (1985); http://dx.doi.org/10.1063/1.95896 (3 pages) | Cited 17 times

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See Also: Erratum

Show Abstract
The exact solution is obtained for describing the external field effects in the optically induced molecular reorientation and bistability in a homeotropic nematic liquid crystal. With a low external field applied transverse or parallel to the laser propagation direction, optical bistability can always be suppressed or enhanced and hence can be seen in all existing nematics at a low laser power (typically < 1 kW/cm2). The fields corresponding to the tricritical point are obtained.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.65.-k Nonlinear optics
64.70.M- Transitions in liquid crystals
64.70.P- Glass transitions of specific systems
78.20.Jq Electro-optical effects

Studies of orientation of carbon by core electron energy loss spectroscopy

T. T. P. Cheung

Appl. Phys. Lett. 46, 825 (1985); http://dx.doi.org/10.1063/1.95897 (3 pages) | Cited 2 times

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Orientation ordering of graphite layers on surfaces of carbon has been investigated using electron energy loss spectroscopy. The ordering is monitored by the orientation dependence of the line shape of the carbon K edge. The effects of ion sputtering on the orientation ordering are also examined.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Calorimetric and acoustic study of ultraviolet laser ablation of polymers

G. Gorodetsky, T. G. Kazyaka, R. L. Melcher, and R. Srinivasan

Appl. Phys. Lett. 46, 828 (1985); http://dx.doi.org/10.1063/1.95898 (3 pages) | Cited 84 times

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Calorimetric and acoustic studies of the mechanism of pulsed laser ablation of a polymer at the wavelengths of 193, 248, and 308 nm are reported. The results are mutually consistent and provide insight into the ablation mechanism.
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79.20.Ds Laser-beam impact phenomena
77.70.+a Pyroelectric and electrocaloric effects
82.50.Hp Processes caused by visible and UV light
65.40.De Thermal expansion; thermomechanical effects

Structure of the Al/Al2O3 interface

R. S. Timsit, W. G. Waddington, C. J. Humphreys, and J. L. Hutchison

Appl. Phys. Lett. 46, 830 (1985); http://dx.doi.org/10.1063/1.95899 (3 pages) | Cited 6 times

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The structure of the interface between aluminum and its amorphous surface oxide has been examined by high resolution electron microscopy. The interface was generated on (111) and (110) Al surfaces with oxide films grown by thermal oxidation in air or by anodization. The roughness of the interface consists of a long‐range component originating in the native coarseness of the Al surface, and of a short‐range component descriptive of the undulations of the interface over atomic‐scale lateral distances. The short‐range roughness arose from the presence of ledges on the aluminum at the interface. The ledge heights generally did not exceed two interplanar spacings.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Nanometer lithography with the scanning tunneling microscope

M. Ringger, H. R. Hidber, R. Schlögl, P. Oelhafen, and H.‐J. Güntherodt

Appl. Phys. Lett. 46, 832 (1985); http://dx.doi.org/10.1063/1.95900 (3 pages) | Cited 41 times

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Nanometer structures have been produced with the scanning tunneling microscope. These structures have been identified by high resolution scanning electron microscopy. This effect seems to have a potential in high resolution microfabrication of semiconductor and superconductor devices.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
73.40.Gk Tunneling
85.30.-z Semiconductor devices
85.25.-j Superconducting devices

Annealing behavior of implanted nitrogen in AISI 316 stainless steel

J. Hirvonen and A. Anttila

Appl. Phys. Lett. 46, 835 (1985); http://dx.doi.org/10.1063/1.95901 (2 pages) | Cited 21 times

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The behavior of implanted nitrogen during post‐implantation annealing has been studied at 400, 450, and 500 °C by depth profiling of 15N‐implanted samples using the nuclear resonance broadening method. During the initial states of the annealing the nitrogen depth profiles behaved as if all the nitrogen would be able to diffuse, i.e., to be in solution, whereas for the longer annealing times the concentration of migrated nitrogen in the unimplanted region reached equilibrium with the implanted layer. The diffusion coefficients were determined as well as the equilibrium concentrations at the temperatures involved. The published values of the diffusion coefficients were extended to temperatures more than 500° C lower than before.
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66.30.J- Diffusion of impurities
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Second derivative internal photoemission spectroscopy for the study of interdiffusion and compound formation phenomena

S. K. Krawczyk and T. Mrabeut

Appl. Phys. Lett. 46, 837 (1985); http://dx.doi.org/10.1063/1.95902 (3 pages)

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In this letter a simple spectroscopic method for the study of interdiffusion and compound formation phenomena occurring between two metal layers deposited on the top of oxidized silicon wafer is developed. Using this method, the simultaneous presence of different metallic compounds at the interface with the insulator can be identified and their composition may be evaluated. Experimental results presented here have been obtained with the Al (150 Å)‐Au (150 Å)‐SiO2‐Si and Au (150 Å)‐Al (150 Å)‐SiO2‐Si systems.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.55.-a Thin film structure and morphology

Clustering of molecular hydrogen in fused silica

J. E. Graebner, P. J. Lemaire, L. C. Allen, and W. H. Haemmerle

Appl. Phys. Lett. 46, 839 (1985); http://dx.doi.org/10.1063/1.95903 (3 pages) | Cited 2 times

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Molecular hydrogen H2 in glass optical fibers has been detected calorimetrically at the 50 ppm level by monitoring the ortho‐para conversion of H2 at low temperatures (T<1 K). The number of H2 molecules is determined and information about the local configuration can be inferred. It is concluded that the majority of the H2 is located in strings or very small clusters of two or three molecules each, rather than being uniformly distributed as isolated molecules.
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42.81.-i Fiber optics
66.30.J- Diffusion of impurities
67.80.-s Quantum solids

Thermoelectric figure of merit of boron phosphide

Shigemi Yugo, Takashi Sato, and Tadamasa Kimura

Appl. Phys. Lett. 46, 842 (1985); http://dx.doi.org/10.1063/1.95904 (3 pages) | Cited 13 times

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The thermoelectric power, thermal and electrical conductivity of boron phosphide grown by chemical vapor deposition of hydrogenated compounds were measured in the temperature range from room temperature to 1000 °C and the figure of merit of boron phosphide was evaluated. The figure of merit of 8×10−4 deg−1 was obtained at 1000 °C. This is one of the largest figures of merit at 1000 °C that have ever been obtained.
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72.20.Pa Thermoelectric and thermomagnetic effects
65.90.+i Other topics in thermal properties of condensed matter (restricted to new topics in section 65)
72.80.Jc Other crystalline inorganic semiconductors
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

Undercooling of molten silicon

G. Devaud and D. Turnbull

Appl. Phys. Lett. 46, 844 (1985); http://dx.doi.org/10.1063/1.95926 (2 pages) | Cited 47 times

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Droplets of uncoated molten Si (0.4–0.8 mm diameter) have been undercooled 250 °C. Ge droplets of similar size have been undercooled 280 °C in a B2O3 flux. The observed nucleation onset temperatures of both Si and Ge droplets are at or below the predicted amorphous phase melting temperatures Ta1. The solidified structures were polycrystalline. The nucleation frequency I, calculated from the Si data (2×104/cm3 s at 240±20 °C undercooling), should be an upper limit of the homogeneous nucleation frequency of the crystal phase, since we did not establish that nucleation was homogeneous in our experiments. However, this limiting I for Si indicates that homogeneous nucleation of crystal would not become appreciable in laser pulsing experiments until the liquid Si is undercooled to well below Ta1.
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82.60.Nh Thermodynamics of nucleation
64.70.D- Solid-liquid transitions
81.30.Fb Solidification
81.10.Dn Growth from solutions

Si liquid‐amorphous transition and impurity segregation

S. U. Campisano, D. C. Jacobson, J. M. Poate, A. G. Cullis, and N. G. Chew

Appl. Phys. Lett. 46, 846 (1985); http://dx.doi.org/10.1063/1.95882 (3 pages) | Cited 28 times

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Pulsed laser irradiation of amorphous Si has been used to produce undercooled liquid Si from which the amorphous phase can directly form. Implanted In, Bi, and As impurities are observed to diffuse and be segregated in a novel fashion by liquid‐amorphous interfaces moving from the bulk and surface. Ultrathin impurity segregation layers can be formed within amorphous Si by this process. The first measurements of interfacial segregation coefficients during a liquid‐amorphous transition are found to be similar to liquid‐crystal values at the same velocity.
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64.70.Ja Liquid-liquid transitions
79.20.Ds Laser-beam impact phenomena
64.75.-g Phase equilibria
66.30.J- Diffusion of impurities

Effects of Be and Si on disordering of the AlAs/GaAs superlattice

Mitsuo Kawabe, Norisato Shimizu, Fumio Hasegawa, and Yasuo Nannichi

Appl. Phys. Lett. 46, 849 (1985); http://dx.doi.org/10.1063/1.95860 (2 pages) | Cited 59 times

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Effects of Be doping and the interaction of Be and Si on the disordering of 15‐nm AlAs/15‐nm GaAs superlattices were studied. Be doping of more than 4×1019 cm−3 causes the intermixing of Al and Ga during epitaxial growth and the effect of Be surface accumulation is observed at the growth temperature of 540 °C, while after incorporation of Be in the crystal the annealing of 750 °C, 2 h does not cause any remarkable change in the superlattice structure. Be doping in the Si‐doped superlattice shows remarkable suppression of the disordering of superlattice when the Be doping level exceeds that of Si.
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68.55.-a Thin film structure and morphology
61.72.U- Doping and impurity implantation
66.30.H- Self-diffusion and ionic conduction in nonmetals
61.50.Ks Crystallographic aspects of phase transformations; pressure effects

High‐performance photovoltaic infrared devices in Hg1−xCdxTe on GaAs

E. R. Gertner, S. H. Shin, D. D. Edwall, L. O. Bubulac, D. S. Lo, and W. E. Tennant

Appl. Phys. Lett. 46, 851 (1985); http://dx.doi.org/10.1063/1.95861 (3 pages) | Cited 12 times

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A combination of organometallic and isothermal vapor phase epitaxy was used sequentially to grow CdTe and Hg1−xCdxTe on GaAs substrates. Photodiodes in the Hg1−xCdxTe show properties comparable to the best Hg1−xCdxTe grown by liquid phase epitaxy. Resistance‐area products were ≥107 Ω cm2 and >104 Ω cm2 at 77 K for Hg1−xCdxTe with cut‐off wavelength of 3.73 and 5.54 μm at 77 K, respectively. The backside‐illuminated spectral response was broadband with peak external quantum efficiencies typically >50% (without antireflection coating).
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85.60.Dw Photodiodes; phototransistors; photoresistors
68.55.-a Thin film structure and morphology
85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects

Sintered n‐CuInSe2/Au Schottky diode

F. Leccabue, D. Seuret, and O. Vigil

Appl. Phys. Lett. 46, 853 (1985); http://dx.doi.org/10.1063/1.95862 (3 pages) | Cited 5 times

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Rectifying CuInSe2/Au contacts were prepared by a vacuum evaporation of Au on n‐type sintered CuInSe2 samples in order to evaluate the electro‐optical properties of these devices. The low photovoltaic efficiency of the diode is due to the presence of the insulating layer, surface states, and high series resistance. A good quantum efficiency of about 60% in the 0.72–1.24‐μm range has been obtained.
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73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Ns Metal-nonmetal contacts

Asymmetric quantum well electron barrier diode

S. W. Kirchoefer, H. S. Newman, and J. Comas

Appl. Phys. Lett. 46, 855 (1985); http://dx.doi.org/10.1063/1.95863 (3 pages) | Cited 7 times

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A new rectifying diode is proposed whose asymmetric current versus voltage characteristic originates from the ground state energies in an asymmetric sequence of quantum wells. Data are presented on devices fabricated from samples of this proposed structure grown by molecular beam epitaxy. These diodes exhibit current versus voltage temperature dependence and reverse bias capacitance which are different from other types of electron barrier devices.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Ei Rectification

Impurity‐disordered, coupled‐stripe AlxGa1−xAs‐GaAs quantum well laser

P. Gavrilovic, K. Meehan, J. E. Epler, N. Holonyak, R. D. Burnham, R. L. Thornton, and W. Streifer

Appl. Phys. Lett. 46, 857 (1985); http://dx.doi.org/10.1063/1.95864 (3 pages) | Cited 33 times

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Continuous room‐temperature operation of impurity‐disordered, coupled‐stripe AlxGa1−xAs‐GaAs quantum well heterostructure lasers is described. Silicon (donor) diffusion at 850 °C is used to produce layer disordering and index guiding, in addition to providing carrier confinement in a ten‐stripe coupled array (8‐μm‐wide stripes on 10‐μm centers).
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42.55.Px Semiconductor lasers; laser diodes
66.30.J- Diffusion of impurities
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Jb Light-emitting devices
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