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1 Jul 1985

Volume 47, Issue 1, pp. 1-68

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New optical gyroscope based on the ring passive phase conjugator

Baruch Fischer and Shmuel Sternklar

Appl. Phys. Lett. 47, 1 (1985); http://dx.doi.org/10.1063/1.96414 (3 pages) | Cited 21 times

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A new optical rotation sensor is described. It is a ring passive phase conjugator in which the ring may consist of a multimode fiber. A nonreciprocal phase shift in the ‘‘passive’’ like fiber ring activates a grating movement and subsequent frequency detuning of the beams in a photorefractive four‐wave mixer. This device has the advantages of natural reciprocal behavior of phase conjugate beams (essential for rotation sensing) and has several adjustable controlling parameters. It reveals a new class of interferometry in which changes in the ring’s optical phases, the beam’s intensities and losses, and the mixing crystal’s efficiency and electric field modulate a frequency detuning of the oscillating beams.
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42.81.-i Fiber optics
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

1.54‐μm phase‐adjusted InGaAsP/InP distributed feedback lasers with mass‐transported windows

Björn Broberg, Sekartedjo Koentjoro, Kazuhito Furuya, and Yasuharu Suematsu

Appl. Phys. Lett. 47, 4 (1985); http://dx.doi.org/10.1063/1.96400 (3 pages) | Cited 6 times

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1.54‐μm wavelength phase‐adjusted InGaAsP/InP distributed feedback lasers with low threshold and almost symmetrical subthreshold spectra are demonstrated. Antireflecting window structures were formed by a novel mass transport technique over a length of 25 μm. The phase adjustment was accomplished by a groove in the substrate. Asymmetric output characteristics due to displacement of the groove from the cavity center were observed in agreement with theory.
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42.55.Px Semiconductor lasers; laser diodes
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Transverse modes of gain‐guided coupled‐stripe lasers: External cavity control of the emitter spacing

J. E. Epler, N. Holonyak, R. D. Burnham, T. L. Paoli, R. L. Thornton, and M. M. Blouke

Appl. Phys. Lett. 47, 7 (1985); http://dx.doi.org/10.1063/1.96409 (3 pages) | Cited 10 times

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By means of an external grating cavity, the dispersion relation of the transverse modes of gain‐guided coupled‐stripe laser diodes is determined. The parabolic relation obtained indicates (despite the stripes) a relatively flat gain profile similar to a broad area laser. Accordingly, higher order transverse modes are possible and are demonstrated with near and far fields exhibiting one and two emitters per stripe.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Tilted‐mirror semiconductor lasers

J. Salzman, R. Lang, S. Margalit, and A. Yariv

Appl. Phys. Lett. 47, 9 (1985); http://dx.doi.org/10.1063/1.96416 (3 pages) | Cited 7 times

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Broad‐area GaAs heterostructure lasers with a tilted mirror were demonstrated for the first time, with the tilted mirror fabricated by etching. These lasers operate in a smooth and stable single lateral mode with a high degree of spatial coherence. The suppression of filamentation manifests itself in a high degree of reproducibility in the near‐field pattern.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes

1.55‐μm InGaAsP distributed feedback vapor phase transported buried heterostructure lasers

T. L. Koch, T. J. Bridges, E. G. Burkhardt, P. J. Corvini, L. A. Coldren, R. A. Linke, W. T. Tsang, R. A. Logan, L. F. Johnson, R. F. Kazarinov, R. Yen, and D. P. Wilt

Appl. Phys. Lett. 47, 12 (1985); http://dx.doi.org/10.1063/1.96410 (3 pages) | Cited 10 times

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1.55‐μm single longitudinal mode InGaAsP distributed feedback (DFB) lasers have been fabricated using a vapor phase transported (VPT) buried heterostructure geometry on a liquid phase epitaxially grown broad area DFB base. Lasing thresholds in the 35–65‐mA range were obtained, with side mode suppression ratios as high as 39 dB under modulation. The VPT DFB laser has both a good high‐speed modulation capability and low wavelength chirping under high‐speed modulation, making it an attractive candidate for high bit rate, long‐haul optical fiber systems applications, with demonstrated record system performance at both 2 and 4 Gbit/s.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

Optical detection of ultrasound at a distance using a confocal Fabry–Perot interferometer

Jean‐Pierre Monchalin

Appl. Phys. Lett. 47, 14 (1985); http://dx.doi.org/10.1063/1.96411 (3 pages) | Cited 46 times

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A novel scheme to detect ultrasonic motion at the surface of a solid sample is presented. The surface of the sample is illuminated by a laser and the light scattered by the surface is received by a confocal Fabry–Perot interferometer which demodulates the Doppler shift produced by ultrasound. Experimental results, obtained at a distance of 1.5 m from a machined but not polished steel plate, and excited by ultrasound produced by a laser pulse, are presented.
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43.35.Yb Ultrasonic instrumentation and measurement techniques
07.60.Ly Interferometers
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

7‐GHz acoustic transmission through a Hertzian contact

B. L. Heffner, G. S. Kino, and B. T. Khuri‐Yakub

Appl. Phys. Lett. 47, 17 (1985); http://dx.doi.org/10.1063/1.96412 (2 pages) | Cited 1 time

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Transmission of acoustic waves through a Hertzian contact is demonstrated at 7 GHz. A zinc oxide transducer on a sapphire buffer rod is used to excite acoustic pulses which propagate into a sapphire flat through a direct Hertzian contact. Measurement of the reflected pulses yields a transmission loss through the contact of 1.2 dB.
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43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.38.Fx Piezoelectric and ferroelectric transducers

Morphological phases of tungsten thin films on gallium arsenide

Gustav E. Derkits, J. P. Harbison, and D. M. Hwang

Appl. Phys. Lett. 47, 19 (1985); http://dx.doi.org/10.1063/1.96413 (2 pages) | Cited 2 times

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Tungsten thin layers deposited on GaAs single crystal substrates in ultrahigh vacuum display a variety of distinct morphologies depending on substrate temperature and metal layer thickness. We present a preliminary study of some of these structures, including boundary layers in the metal, columnar growth, and an unusual phase that shows a strong orientational correlation with the substrate. We also discuss the effects of these structures on applications of W metallization to devices and processes of III‐V semiconducting compounds.
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68.55.-a Thin film structure and morphology

Role of mechanical stress in the light‐induced degradation of hydrogenated amorphous silicon

Martin Stutzmann

Appl. Phys. Lett. 47, 21 (1985); http://dx.doi.org/10.1063/1.96415 (3 pages) | Cited 44 times

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The correlation between the high intrinsic mechanical stresses in plasma‐deposited hydrogenated amorphous silicon and the magnitude of the light‐induced degradation in this material (Staebler–Wronski effect) has been studied for films with different thicknesses and for various substrate materials. The experimental results suggest that the creation of metastable defects occurs mainly in the strained region of the films near the substrate, and that the number of these states is roughly proportional to the total stress in a given sample.
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68.60.-p Physical properties of thin films, nonelectronic
78.40.Fy Semiconductors
62.20.-x Mechanical properties of solids
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)

A photoluminescence study of molecular beam epitaxy grown CdTe films on (001)InSb substrates

Z. C. Feng, A. Mascarenhas, W. J. Choyke, R. F. C. Farrow, F. A. Shirland, and W. J. Takei

Appl. Phys. Lett. 47, 24 (1985); http://dx.doi.org/10.1063/1.96420 (2 pages) | Cited 23 times

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The radiative defect density ρ, as determined by high‐resolution, low‐temperature photoluminescence, was determined for 11 single crystal films of CdTe grown by molecular beam epitaxy on (001) InSb in the temperature interval 170–285 °C. A minimum of 0.6% is found for ρ near 185 °C as compared to 2.5% for the best previously reported value, indicating a high degree of perfection for our films. X‐ray double‐crystal rocking curves have also been obtained for these films, and a minimum in the full width at half‐maximum is also found in the neighborhood of 185 °C.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
75.20.Ck Nonmetals
68.55.-a Thin film structure and morphology

Low‐resistance nonalloyed ohmic contacts to Si‐doped molecular beam epitaxial GaAs

P. D. Kirchner, T. N. Jackson, G. D. Pettit, and J. M. Woodall

Appl. Phys. Lett. 47, 26 (1985); http://dx.doi.org/10.1063/1.96391 (3 pages) | Cited 41 times

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We have found evidence that the surface depletion charge density in molecular beam epitaxial n‐GaAs doped heavily with Si approaches the Si concentration. In situ metallization of the as‐grown surface of GaAs uniformly doped with Si at 1×1020 cm−3 yields a specific contact resistivity of 1.3 μΩ cm2, indicating a space‐charge density about equal to the silicon density despite a measured bulk electron density of 4×1018 cm−3. This contact resistivity is among the lowest for nonalloyed ohmic contacts to n‐GaAs. We attribute the large discrepancy between surface space‐charge density and bulk electron density to the amphoteric behavior of silicon in GaAs. Surface Fermi‐level pinning and arsenic stabilization create a surface depletion region where donor site selection predominates, whereas the extrinsic electron density in the bulk causes self‐compensation.
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73.40.Cg Contact resistance, contact potential
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

NpnN double‐heterojunction bipolar transistor on InGaAsP/InP

L. M. Su, N. Grote, R. Kaumanns, and H. Schroeter

Appl. Phys. Lett. 47, 28 (1985); http://dx.doi.org/10.1063/1.96392 (3 pages) | Cited 10 times

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Double‐heterojunction bipolar transistors have been fabricated on InGaAs(P)/InP with current gains of up to 200. Transistors with a p+‐InGaAs/N‐InP base/collector junction exhibited drastic gain reduction at low collector bias voltages which is ascribed to the electron repelling effect of the conduction‐band spike formed at the collector heterojunction. To overcome this complication a thin n‐InGaAs transition layer was inserted between the ternary base and the InP wide‐gap collector. The resulting nN double‐layer collector structure leads to excellent current/voltage characteristics.
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85.30.Pq Bipolar transistors

Stresses in the InP/Ti/Pt and InP/SiO2/Ti/Pt multilayer systems

W. C. Dautremont‐Smith and S. M. Woelfer

Appl. Phys. Lett. 47, 31 (1985); http://dx.doi.org/10.1063/1.96438 (3 pages) | Cited 6 times

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The contact metallization of 1000 Å Ti followed by 1500 Å Pt deposited by rf diode sputtering onto InP is found to be of very low stress, as has previously been reported for this metallization on GaAs. This is due to the effect of compressive stress in the Ti film being compensated by tensile stress in the Pt film. However, when Ti is deposited onto SiO2 coated InP, its stress changes sign, becoming highly tensile, of magnitude ∼1×1010 dyne cm−2. Thus its effect becomes additive to that of the Pt film, producing an effective stress in the Ti/Pt bilayer of ∼7×109 dyne cm−2 tensile. Due to moderately low compressive stress in the SiO2, the effective resultant stress for the multilayer of (3000 Å SiO2/Å Ti/1500 Å Pt) on InP(100) remains tensile, of magnitude 1.7×109 dyne cm−2. The origin of the stress reversal in the Ti film appears to be its mode of nucleation and growth, as opposed to the formation of a highly stressed interfacial compound layer.
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68.60.-p Physical properties of thin films, nonelectronic
68.55.-a Thin film structure and morphology

Picosecond optoelectronic measurement of microstrip dispersion

Donald E. Cooper

Appl. Phys. Lett. 47, 33 (1985); http://dx.doi.org/10.1063/1.96393 (3 pages) | Cited 4 times

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The broadening and distortion of 5‐ps electrical pulses propagating on microstrip lines were measured. The dispersion curve of the microstrip was measured with a 150‐GHz bandwidth. Comparison with an approximate analytical dispersion formula indicates that the microstrip is much less dispersive than expected.
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84.40.Az Waveguides, transmission lines, striplines
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Persistent photoconductivity in quantum well resonators

T. C. L. G. Sollner, H. Q. Le, C. A. Correa, and W. D. Goodhue

Appl. Phys. Lett. 47, 36 (1985); http://dx.doi.org/10.1063/1.96394 (3 pages) | Cited 10 times

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We have made the first observation of persistent photoconductivity in resonant tunneling structures. The spectral dependence suggests that it arises from Si DX centers in the AlGaAs barriers, and calculations based on a simple model using this assumption agree well with the observations. This effect has been useful in investigating the charge distribution and electric fields near the heterojunction interface and in determining the barrier parameters. The model should help in the design and fabrication of optimized resonant tunneling devices.
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72.40.+w Photoconduction and photovoltaic effects
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Measurement of high boron concentrations in silicon by infrared spectroscopy

B. L. Sopori

Appl. Phys. Lett. 47, 39 (1985); http://dx.doi.org/10.1063/1.96395 (3 pages) | Cited 1 time

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A new absorption line corresponding to an electronic transition P3/2→P1/2 at 668 cm−1 is used to measure high concentrations of boron in silicon. The calibration constant at 12 K is determined from the measurements on single‐crystal silicon. A linear relationship between the absorbance and boron concentration is established up to 1017 cm−3 doping levels. Application of this measurement technique to large grain polycrystalline silicon is discussed.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
61.72.U- Doping and impurity implantation
78.30.Hv Other nonmetallic inorganics
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Low‐temperature liquid phase epitaxial growth of an (In,Ga,Al)Sb quaternary alloy

Hisayoshi Ohshima, Akira Tanaka, and Tokuzo Sukegawa

Appl. Phys. Lett. 47, 41 (1985); http://dx.doi.org/10.1063/1.96396 (2 pages) | Cited 1 time

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A growth procedure was proposed to prepare the saturated growth solution at low temperature. Using the procedure, an (In,Ga,Al)Sb alloy was grown on GaSb at 450 °C successfully. The energy gap and the lattice constant of the grown layer were determined at 0.886 eV at 77 K and 6.1174 Å, respectively. The estimated value of the alloy composition from these values was In0.048Ga0.812Al0.140Sb.
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68.55.-a Thin film structure and morphology
61.66.Fn Inorganic compounds
68.60.-p Physical properties of thin films, nonelectronic
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Tungsten‐platinum alloy Schottky barriers on n‐type GaAs

T. Okumura and K. N. Tu

Appl. Phys. Lett. 47, 42 (1985); http://dx.doi.org/10.1063/1.96439 (3 pages) | Cited 2 times

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Alloys of tungsten and platinum were studied as a Schottky contact material on n‐type GaAs. Schottky barrier heights for two alloy compositions, W50Pt50 and W80Pt20, were measured by current‐voltage, capacitance‐voltage, and photoresponse techniques of the barrier heights. The values of the barrier heights from the latter two techniques were 0.90±0.02 eV and did not change with annealing at 350 °C for 20 h. However, the value from the I‐V technique changed from about 0.6 to 0.7 eV upon annealing. The W50Pt50 alloy was found to be more stable than the W80Pt20 alloy on GaAs.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Growth of high quality GaInAs on InP buffer layers by metalorganic chemical vapor deposition

K. T. Chan, L. D. Zhu, and J. M. Ballantyne

Appl. Phys. Lett. 47, 44 (1985); http://dx.doi.org/10.1063/1.96397 (3 pages) | Cited 13 times

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The uninterrupted growth of high quality GaInAs layers on InP buffers by atmospheric pressure metalorganic chemical vapor deposition using trimethylindium is reported. A lattice mismatch smaller than 4.3×10−4 and low‐temperature photoluminescence exciton linewidth of 2.6 meV have been obtained, along with best 300‐K, 77‐K, and 4.2‐K Hall mobilities of 11 200, 64 000, and 80 000 cm2/Vs, respectively. Such high mobility values at 4.2 K are explained by the existence of a two‐dimensional electron gas and demonstrate the superior quality of the GaInAs epilayers grown in our laboratory.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.40.Fy Semiconductors
68.55.-a Thin film structure and morphology

Very high mobility InP grown by low pressure metalorganic vapor phase epitaxy using solid trimethylindium source

L. D. Zhu, K. T. Chan, and J. M. Ballantyne

Appl. Phys. Lett. 47, 47 (1985); http://dx.doi.org/10.1063/1.96398 (2 pages) | Cited 12 times

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Growth of very high quality unintentionally doped InP by low pressure metalorganic vapor phase epitaxy using solid trimethylindium as the indium source is described. Hall mobilities of 5370 cm2/Vs (300 K) and 131 600 cm2/Vs (77 K) with residual carrier concentration of 2.5×1014 cm−3 have been obtained. Low‐temperature photoluminescence exciton spectra revealed that the neutral acceptor‐bound‐exciton emission was hardly observable, indicating a very low compensation ratio.
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68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.40.Fy Semiconductors

Amorphous silicon bulk barrier phototransistor with Schottky barrier emitter

C. Y. Chang, B. S. Wu, Y. K. Fang, and R. H. Lee

Appl. Phys. Lett. 47, 49 (1985); http://dx.doi.org/10.1063/1.96399 (3 pages) | Cited 5 times

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An amorphous silicon indium tin oxide/n+‐i‐δ( p+)i/Al Schottky barrier phototransistor was fabricated on a glass substrate, where δ( p+) is the thin (200 Å) p+ base. The operation of the transistor is similar to that of an n+‐i‐δ( p+)i‐n+ amorphous silicon bulk barrier phototransistor. Photogenerated holes are accumulated at the thin base region (barrier valley) and induce a large number of electrons injected from the Schottky barrier due to the hole induced barrier lowering. Varying the emitter and collector i‐layer thickness produced different current gains in which a maximum value of 5.6 is obtained for the 300‐Å emitter i‐layer/p+/3000‐Å collector i‐layer structure under an input red light intensity of 7.5 mW/cm2.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)

Atomic layer epitaxy of III‐V binary compounds

S. M. Bedair, M. A. Tischler, T. Katsuyama, and N. A. El‐Masry

Appl. Phys. Lett. 47, 51 (1985); http://dx.doi.org/10.1063/1.96401 (3 pages) | Cited 51 times

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Atomic layer epitaxy (ALE) of III‐V semiconductors is reported for the first time using metalorganic and hydride sources. This is achieved by using a new growth chamber and susceptor design which incorporates a shuttering mechanism to allow successive exposure to streams of gases from the two sources. Also, most of the gaseous boundary layer is sheared off after exposure to the gas streams. GaAs and AlAs deposited by ALE are single crystal and show good optical properties.
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68.55.-a Thin film structure and morphology
75.20.Ck Nonmetals
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.40.Fy Semiconductors

Dependence of radiation‐induced interface traps on gate electrode material in metal/SiO2/Si devices

Viktor Zekeriya and T‐P. Ma

Appl. Phys. Lett. 47, 54 (1985); http://dx.doi.org/10.1063/1.96402 (3 pages) | Cited 9 times

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The density of radiation‐induced interface traps in a metal‐oxide‐semiconductor (MOS) device has been found to depend on the electrode material used to form the gate. For a given oxide process, this dependence correlates well with the gate‐induced interfacial stress distribution in the MOS system. The gate‐induced bond strain gradient model that we proposed previously may be readily used to explain the results.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces
61.80.Cb X-ray effects

High intensity submillimeter photoresponse of a Si inversion layer

I. B. Verma, M. Leung, H. D. Drew, R. E. Doezema, J. E. Furneaux, and R. J. Wagner

Appl. Phys. Lett. 47, 57 (1985); http://dx.doi.org/10.1063/1.96403 (3 pages) | Cited 2 times

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The submillimeter wave (496, 385, and 66 μm) photoresponse has been measured in an n‐channel Si metal‐oxide‐semiconductor field‐effect transistor at 4.2 K. A fast (≤10 ns) response is observed only in the low carrier density (ns) regime where the dc conductance is activated. Nonlinear photo response is found for I≥10 kW/cm2 and the signal follows a simple saturation behavior. The peak illuminated effective mobility is ∼13 000 cm2/Vs (at ns∼0.7×1011 cm−2) which is more than a factor of 2 larger than the peak 4.2‐K mobility of the device (at ns∼2.4×1012 cm−2). At carrier densities greater than 5×1011 cm−2 the response is bolometric with a response time ∼1 μs.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Time‐resolved exciton recombination in CdTe/Cd1−xMnxTe multiple quantum wells

X.‐C. Zhang, S.‐K. Chang, A. V. Nurmikko, L. A. Kolodziejski, R. L. Gunshor, and S. Datta

Appl. Phys. Lett. 47, 59 (1985); http://dx.doi.org/10.1063/1.96404 (3 pages) | Cited 27 times

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The lifetime of excitons in CdTe/Cd1−xMnxTe multiple quantum wells at low temperature has been measured by time‐resolved photoluminescence in samples of different well thickness. The excitons, which have elsewhere been shown to be localized preferentially near the heterointerfaces, possess an average lifetime which becomes shorter with decreasing well thickness and increasing external magnetic field. The results are in qualitative agreement with the expectations for a localized quasi‐two‐dimensional exciton with a large radiative recombination cross section.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.35.-y Excitons and related phenomena
78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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