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15 Nov 1985

Volume 47, Issue 10, pp. 1019-1119

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Power characteristics of unstable resonator cavity semiconductor stripe lasers

Jaroslava Z. Wilcox

Appl. Phys. Lett. 47, 1019 (1985); http://dx.doi.org/10.1063/1.96417 (3 pages) | Cited 1 time

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Approximate formulas for the power output from unstable resonator cavity high‐gain semiconductor stripe lasers are derived using the geometrical optics theory. The formulas for the outcoupling efficiency are related to measurable quantities, and shown to be in good agreement with the available experimental data.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.15.Dp Wave fronts and ray tracing

Mode‐locked coupled‐stripe quantum well laser operation (λ∼7350 Å) in a tunable (Δℏω∼37 meV>kT) external grating cavity

J. E. Epler, G. S. Jackson, N. Holonyak, M. Weinstein, R. D. Burnham, and T. L. Paoli

Appl. Phys. Lett. 47, 1022 (1985); http://dx.doi.org/10.1063/1.96364 (2 pages) | Cited 2 times

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The performance of an actively mode‐locked coupled‐stripe Alx′Ga1−x′As‐AlxGa1−xAs quantum well laser in a tunable external cavity is described. Pulses as short as 50 ps are measured and a tuning range of Δℏω∼37 meV>kT, which is not the limit, is demonstrated. The existence of the transverse modes of coupled‐stripe lasers increases significantly the spectral density of available lasing modes (for mode locking) compared with a single‐stripe laser.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
78.45.+h Stimulated emission

Photorefractive effects in LiNbO3 channel waveguides: Model and experimental verification

R. A. Becker and R. C. Williamson

Appl. Phys. Lett. 47, 1024 (1985); http://dx.doi.org/10.1063/1.96365 (3 pages) | Cited 21 times

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Photorefractive effects in Ti‐indiffused LiNbO3 channel waveguides at λ=0.85 μm are modeled and the theoretical predictions are experimentally verified. This model allows, for the first time, the quantitative prediction of the magnitudes and time evolution of photorefractive effects in LiNbO3 channel waveguide devices and provides a consistent method of characterizing the photorefractive behavior of LiNbO3 channel waveguides.
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42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects

Room‐temperature continuous‐wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition

Masao Ikeda, Yoshifumi Mori, Hiromitsu Sato, Kunio Kaneko, and Naozo Watanabe

Appl. Phys. Lett. 47, 1027 (1985); http://dx.doi.org/10.1063/1.96366 (2 pages) | Cited 51 times

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Continuous‐wave (cw) operation at temperatures up to 23 °C of an Al0.26Ga0.26In0.48P/Ga0.52In0.48P/ Al0.26Ga0.26In0.48P double heterostructure (DH) laser has been achieved for the first time. The threshold current was 160 mA at 20 °C for a device with a 10‐μm‐wide and 250‐μm‐long ion‐implanted stripe geometry. The emission wavelength was 671 nm during cw operation at 10 °C. To reduce thermal resistance to a heat sink, a dually stacked structure made of a thin (∼0.3 μm) p‐AlGaInP layer and a p‐Al0.76Ga0.24As layer was used as a cladding layer. The DH wafer was grown by atmospheric pressure metalorganic chemical vapor deposition.
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42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.45.+h Stimulated emission

Narrow single stabilized mode operation of coupled‐stripe diode lasers

J. Berger and D. Fekete

Appl. Phys. Lett. 47, 1029 (1985); http://dx.doi.org/10.1063/1.96367 (3 pages) | Cited 1 time

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In order to investigate the possibility to force an array of coupled lasers to emit a single longitudinal mode under current pulse modulation, a new hybrid device was constructed from two twin coupled‐stripe lasers with external mirrors. A single narrow longitudinal mode has been obtained from the two coupled lasers. The spectrum was stabilized to less than 0.15 Å through a wide range of current pulse amplitudes.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.82.-m Integrated optics

Room‐temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate

T. H. Windhorn and G. M. Metze

Appl. Phys. Lett. 47, 1031 (1985); http://dx.doi.org/10.1063/1.96368 (3 pages) | Cited 45 times

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Room‐temperature operation has been achieved for GaAs/AlGaAs heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate. These devices, which incorporate a large optical cavity structure grown by molecular beam epitaxy directly on a Si wafer, have exhibited threshold currents as low as 775 mA and power outputs as high as 27 mW/facet in pulsed operation.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Room‐temperature operation of a para‐H2 rotational Raman laser

K. Midorikawa, H. Tashiro, Y. Aoki, K. Nagasaka, K. Toyoda, and S. Namba

Appl. Phys. Lett. 47, 1033 (1985); http://dx.doi.org/10.1063/1.96369 (3 pages) | Cited 14 times

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We have successfully demonstrated high‐power operation of a para‐H2 rotational Raman laser at room temperature. A photon conversion efficiency of 60% was obtained with a 10.6‐μm CO2 pump energy of 4.3 J, giving 0.85 J in the first Stokes pulse at 17.0 μm. Transient effects observed under room‐temperature conditions are also reported.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.By Design of specific laser systems

Frequency stabilization of an InGaAsP distributed feedback laser to an NH3 absorption line at 15137 Å with an external frequency modulator

T. Yanagawa, S. Saito, S. Machida, Y. Yamamoto, and Y. Noguchi

Appl. Phys. Lett. 47, 1036 (1985); http://dx.doi.org/10.1063/1.96370 (3 pages) | Cited 13 times

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The oscillation frequency of a 1.5‐μm InGaAsP distributed feedback laser is stabilized to an NH3 linear absorption line at 15137 Å. A LiNbO3 external frequency modulator is used instead of direct frequency modulation of the laser to extract error signals. An effective bandwidth of 100 kHz for the feedback loop is obtained through this external modulation scheme. Frequency stability of σ(2,τ)=4×10−11 is achieved for an averaging time of 1 s≤τ≤100 s.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.50.-p Quantum optics

Stimulated emission and laser oscillations in ZnSe‐Zn1−xMnxSe multiple quantum wells at ∼453 nm

R. B. Bylsma, W. M. Becker, T. C. Bonsett, L. A. Kolodziejski, R. L. Gunshor, M. Yamanishi, and S. Datta

Appl. Phys. Lett. 47, 1039 (1985); http://dx.doi.org/10.1063/1.96371 (3 pages) | Cited 29 times

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In this letter we report the first observation of stimulated emission and laser oscillations occurring in ZnSe‐Zn1−xMnxSe quantum well structures. The results were obtained in superlattices consisting of alternating layers of ZnSe and Zn1−xMnxSe on a ZnSe buffer layer grown by molecular beam epitaxy on GaAs. Gain spectra were measured on these samples and thresholds for stimulated emission determined for various emission wavelengths. Optically pumped lasers were fabricated from one of these quantum well structures and found to operate in the blue portion of the visible spectrum from 451.5 to 455 nm. Lasing was observed up to 80 K.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
78.40.Fy Semiconductors

Picosecond nonlinear absorption and four‐wave mixing in GaInAsP

M. N. Islam, E. P. Ippen, E. G. Burkhardt, and T. J. Bridges

Appl. Phys. Lett. 47, 1042 (1985); http://dx.doi.org/10.1063/1.96372 (3 pages) | Cited 9 times

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We report the first λ∼1.5 μm picosecond near‐band‐gap nonlinear absorption and degenerate four‐wave mixing (DFWM) experiments in room‐temperature GaInAsP using a mode‐locked color center laser. The temporal, spectral, and pump energy dependences of the nonlinear signals are investigated. Nonlinear absorption cross sections σeh as large as −5.7×10−15 cm2 are obtained from the pump probe results, while effective nonlinear cross sections σeff as large as 7.8×10−16 cm2 (corresponding to a steady ‖χ(3)‖∼3.8×10−3 esu for a 20‐ns relaxation time) are measured in the DFWM experiments.
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42.65.-k Nonlinear optics
78.20.-e Optical properties of bulk materials and thin films

Axial x‐ray preionized XeCl laser and direct comparison with UV preionization mode

G. J. Bishop, P. E. Dyer, D. N. Raouf, and B. L. Tait

Appl. Phys. Lett. 47, 1045 (1985); http://dx.doi.org/10.1063/1.96373 (3 pages) | Cited 2 times

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Axial x‐ray preionization of a compact XeCl laser is demonstrated; significant improvements (∼1.5) in laser performance compared with an optimized UV preionization array are obtained. This simple and compact technique can readily be incorporated into existing lasers.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Effect of electronic strain on photoacoustic generation in silicon

R. G. Stearns and G. S. Kino

Appl. Phys. Lett. 47, 1048 (1985); http://dx.doi.org/10.1063/1.96374 (3 pages) | Cited 32 times

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The photogeneration of excess free carriers gives rise to a mechanical strain in semiconductors. An experiment has been performed to investigate the contribution of this electronic strain to photoacoustic generation, and it is found that electronic strain is an important mechanism in the photogeneration of acoustic waves in silicon. A theory is developed to predict the contribution of the electronic strain to the photoacoustic generation and is found to agree well with experiment.
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72.50.+b Acoustoelectric effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
73.50.Rb Acoustoelectric and magnetoacoustic effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
62.90.+k Other topics in mechanical and acoustical properties of condensed matter (restricted to new topics in section 62)

Imaging of oxide precipitates in silicon with ballistic phonons

W. Metzger, R. P. Huebener, R. J. Haug, and H.‐U. Habermeier

Appl. Phys. Lett. 47, 1051 (1985); http://dx.doi.org/10.1063/1.96375 (3 pages) | Cited 8 times

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Ballistic phonons were generated at low temperatures in nearly single‐crystalline silicon by scanning the specimen surface with an electron beam. At the opposite sample surface the ballistic phonons were detected with two small‐area bolometers placed at different locations. For a Si specimen which had been annealed for 150 h at 1050 °C, the ballistic phonon image contained fine structure which could be attributed to oxide precipitates. Comparing the phonon images obtained with the two bolometers, we concluded that the structural inhomogeneities affecting the ballistic phonon propagation were located far from the specimen surface scanned by the electron beam. With these experiments a new principle of three‐dimensional tomography based on ballistic phonons has been demonstrated.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
43.60.Rw Remote sensing methods, acoustic tomography
63.20.kp Phonon-defect interactions
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging

Elastic waves propagation in polycrystalline media: A causal response

Abraham I. Beltzer and Neima Brauner

Appl. Phys. Lett. 47, 1054 (1985); http://dx.doi.org/10.1063/1.96376 (2 pages) | Cited 3 times

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An extremely simple closed‐form solution is derived for harmonic waves of an arbitrary frequency propagating in polycrystalline materials. The method applied treats the coherent wave as a causal response of a linear system. A satisfactory agreement with available numerical results is shown.
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62.30.+d Mechanical and elastic waves; vibrations
41.20.Jb Electromagnetic wave propagation; radiowave propagation
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.20.Hq Velocity and attenuation of acoustic waves

Inductively generated, high voltage pulse using an electron beam controlled opening switch

R. J. Commisso, R. F. Fernsler, V. E. Scherrer, and I. M. Vitkovitsky

Appl. Phys. Lett. 47, 1056 (1985); http://dx.doi.org/10.1063/1.96377 (3 pages) | Cited 5 times

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An electron beam controlled opening switch with a conduction period of ∼1 μs has been used in an inductive store system to generate a 280‐kV, 60‐ns full width at half‐maximum voltage pulse across an open circuit by interrupting a 10‐kA discharge. The switch was pressurized to 5 atm with a 99:1 mixture of CH4:C2F6. Degraded voltage performance was obtained with pure CH4 or N2. These results support the conjecture that a judicious choice of gas mixture can lead to optimization of such an opening switch in a parameter regime of interest to pulsed power applications.
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52.75.Kq Plasma switches (e.g., spark gaps)
84.32.Dd Connectors, relays, and switches
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Germanium film on SiO2 with a 〈100〉 texture deposited by the rf sputtering technique

Koji Egami and Atsushi Ogura

Appl. Phys. Lett. 47, 1059 (1985); http://dx.doi.org/10.1063/1.96378 (3 pages) | Cited 7 times

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Germanium (Ge) films on SiO2 with 〈100〉 texture deposited by a sputtering technique and the texture enhancement by a subsequent solid‐state thermal annealing are demonstrated for the first time. A 0.6‐μm‐thick Ge film on a surface oxidized Si wafer deposited by the rf sputtering technique at 600 °C produces a 〈100〉 texture, and the preferential orientation of the film is enhanced by a conventional grain growth process at 900 °C (approximately 0.95Tm, where Tm is the melting point in the Kelvin scale) for 1 h, while the crystallographic texture of the films has never changed at 650 °C (0.75Tm) annealing. The texture enhancement is interpreted by the existence of 〈100〉 oriented precursors and a simple coalescence and rearrangement model.
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering

Preparation of highly photosensitive hydrogenated amorphous Si‐Ge alloys using a triode plasma reactor

A. Matsuda, K. Yagii, M. Koyama, M. Toyama, Y. Imanishi, N. Ikuchi, and K. Tanka

Appl. Phys. Lett. 47, 1061 (1985); http://dx.doi.org/10.1063/1.96379 (3 pages) | Cited 26 times

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Highly photoconductive hydrogenated amorphous Si‐Ge alloys have been prepared from a SiH4/GeH4 gas mixture using a triode glow‐discharge reactor. High photoconductivity (Δσp≂10−4 Ω−1 cm−1) under the AM1 (100 mW/cm2) illumination and low dark conductivity (σd=10−8–10−9 Ω−1 cm−1) have been obtained for the optical gap in the range between 1.5 and 1.7 eV.
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72.40.+w Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.05.Bx Metals, semimetals, and alloys
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Electron spectroscopy study of the Si–O bonding and the polarization screening near the Si‐SiO2 interface

A. Iqbal, C. W. Bates, and J. W. Allen

Appl. Phys. Lett. 47, 1064 (1985); http://dx.doi.org/10.1063/1.96380 (3 pages) | Cited 18 times

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Electron spectroscopy studies of thermally grown SiO2 on Si, α‐quartz, α‐cristobalite, and fused silica show that the variation in the Si–O–Si bond angle in SiO2 does not cause significant change in the charge transfer in the Si–O bond. The relative core level shifts are sensitive to etching and to variations in the oxidation process. Measurements of the Auger parameter for Si show no difference in polarization screening between the Si‐SiO2 interface and the bulk SiO2 and that the nearest neighbors of Si in the SiO4 tetrahedron contribute predominantly to the polarization screening.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
81.65.-b Surface treatments
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

X‐ray determination of dislocation density in epitaxial ZnCdTe

Syed B. Qadri and J. H. Dinan

Appl. Phys. Lett. 47, 1066 (1985); http://dx.doi.org/10.1063/1.96381 (3 pages) | Cited 37 times

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Widths of double‐crystal x‐ray rocking curves for epitaxial layers of the ternary alloy ZnCdTe are found to correlate with lattice parameter misfit between layer and substrate. Estimates of dislocation density in the layers are made using these widths. Values thus obtained are found to be in good agreement with values reported for other materials with similar misfit.
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68.55.-a Thin film structure and morphology

Surface morphology of epitaxial CaF2 films on GaAs(100)

R. A. Hoffman, S. Sinharoy, and R. F. C. Farrow

Appl. Phys. Lett. 47, 1068 (1985); http://dx.doi.org/10.1063/1.96382 (3 pages) | Cited 12 times

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The surface morphology of CaF2 films grown epitaxially on (100) GaAs substrates in an ultrahigh vacuum system is examined using reflection high‐energy electron diffraction, scanning electron microscopy, and replica transmission electron microscopy. Proper substrate surface preparation and film deposition techniques are critical for obtaining epitaxial films which are crack free and smooth. We have demonstrated that group II‐A fluoride films which have a barely perceptible surface texture can be grown onto (100) oriented substrates.
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68.55.-a Thin film structure and morphology

Strain measurement of epitaxial CaF2 on Si (111) by MeV ion channeling

Shin Hashimoto, J.‐L. Peng, W. M. Gibson, L. J. Schowalter, and R. W. Fathauer

Appl. Phys. Lett. 47, 1071 (1985); http://dx.doi.org/10.1063/1.96383 (3 pages) | Cited 61 times

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Planar strain in CaF2 films, grown by molecular beam epitaxy at 700 °C on (111) Si substrates, has been measured by MeV 4He+ ion channeling. For CaF2 films thinner than 200 nm, the planar strain was found to be tensile. No strain was observed for films thicker than 200 nm. The observed tensile strain cannot be explained by a simple pseudomorphic growth model since the planar strain would be compressive due to the larger lattice constant of CaF2 relative to Si. A plausible explanation of the results is that defects are nucleated at the growth temperature to relieve stress. These defects then result in a tensile planar strain as the sample is cooled down after growth due to the large difference in thermal expansion coefficients between CaF2 and Si.
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68.60.-p Physical properties of thin films, nonelectronic
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Novel ultrahigh resolution silverless photothermal imaging in obliquely deposited amorphous Se‐Ge films

K. Solomon Harshavardhan and K. N. Krishna

Appl. Phys. Lett. 47, 1074 (1985); http://dx.doi.org/10.1063/1.96384 (3 pages) | Cited 7 times

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A new photothermal imaging process which utilizes no silver has been demonstrated in obliquely deposited Se‐Ge films. Band‐gap irradiation of Se‐Ge films has been found to give rise to phases of the type SeOx, GeO, and Se as borne by x‐ray initiated Auger electron spectroscopy and x‐ray photoelectron spectroscopy. Annealing of SeOx leads to the formation of SeO2. The large (several orders of magnitude) difference in vapor pressures of SeO2 and Se‐Ge films results in differential evaporation of the films when annealed around 200 °C, thereby leading to imaging. Such a large contrast in evaporation rates between the exposed and unexposed regions has great potential applications in high resolution image storage and phase holography.
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75.20.Ck Nonmetals
68.55.-a Thin film structure and morphology
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks

Variations in interface compound nucleation for Ti‐Al ultrathin films on Si substrates

C. C. Han and R. W. Bené

Appl. Phys. Lett. 47, 1077 (1985); http://dx.doi.org/10.1063/1.96385 (3 pages) | Cited 7 times

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We have determined the structures of compounds nucleated in a series of sequentially sputtered thin bilayer films of Al and Ti on Si substrates for a range of metal thicknesses and for both (100) and (111) substrates. The compound structures were determined by transmission electron microscopy and diffraction, augmented by Auger electron spectroscopy. An annealing temperature of about 380 °C for 30 min was required to produce compound nucleation. For the Ti/Al/Si(100) system it was found that the phases which were nucleated for samples with 30‐min, 380 °C anneals varied from TiAl3 to Ti8Al24 to an unknown compound of tetragonal structure (a=b=5.782 Å, c=6.713 Å) as the Al intermediate layer thickness is changed from 200 to 60 to 40 Å. TiAl3 was the compound nucleated at 380 °C for all other cases. Finally, 410 °C annealing of the Al/Ti/Si(100) samples for 30 min resulted in formation of an apparently Al‐altered form of TiSi2.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology
64.70.K- Solid-solid transitions
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Control of titanium‐silicon and silicon dioxide reactions by low‐temperature rapid thermal annealing

L. J. Brillson, M. L. Slade, H. W. Richter, H. Vander Plas, and R. T. Fulks

Appl. Phys. Lett. 47, 1080 (1985); http://dx.doi.org/10.1063/1.96386 (3 pages) | Cited 7 times

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Auger electron spectroscopy/depth profiling measurements demonstrate that titanium silicide forms between titanium and silicon dioxide at conventional annealing temperatures. Low‐temperature rapid thermal annealing provides a process window in time and temperature to suppress this parasitic reaction relative to silicide formation at titanium‐silicon interfaces within the same thin‐film structure.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Electro‐optic sampling of planar digital GaAs integrated circuits

J. L. Freeman, S. K. Diamond, H. Fong, and D. M. Bloom

Appl. Phys. Lett. 47, 1083 (1985); http://dx.doi.org/10.1063/1.96387 (2 pages) | Cited 14 times

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We report a new electro‐optic sampling configuration which allows planar digital GaAs circuits to be probed noninvasively. Our technique employs a novel backside reflecting geometry, in which a laser beam enters the GaAs substrate from the back and reflects from the circuit metallization. By combining the electro‐optic effect in GaAs with sub‐band‐gap (1.06 μm) picosecond pulses from a continuous wave, mode‐locked neodymium:yttrium aluminum garnet laser, we are able to make wide‐band voltage measurements within GaAs integrated circuits. Results are presented of signals measured on the 2‐μm‐wide on‐chip output line of a medium scale integrated multiplexer/demultiplexer clocked at 2.6 GHz.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
78.20.Jq Electro-optical effects
06.60.Jn High-speed techniques (microsecond to femtosecond)
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