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15 Dec 1985

Volume 47, Issue 12, pp. 1239-1360

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Low threshold planar buried heterostructure lasers fabricated by impurity‐induced disordering

R. L. Thornton, R. D. Burnham, T. L. Paoli, N. Holonyak, and D. G. Deppe

Appl. Phys. Lett. 47, 1239 (1985); http://dx.doi.org/10.1063/1.96290 (3 pages) | Cited 40 times

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We report on the fabrication of index‐guided buried heterostructure lasers by the process of silicon impurity‐induced disordering. This fabrication process for a buried heterostructure laser offers the advantage of reduced fabrication complexity over previous fabrication methods. We present measurements that demonstrate the operation of these devices in a single longitudinal mode, fundamental transverse mode, and with cw threshold currents as low as 3 mA. We also have extracted 80 mW cw from a device with a 10‐mA threshold current. Our results indicate that this process has great potential for the fabrication of low threshold, efficient light sources.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes

Remote monitoring of ammonia using a CO2 laser and infrared fibers

S. Simhony and A. Katzir

Appl. Phys. Lett. 47, 1241 (1985); http://dx.doi.org/10.1063/1.96419 (3 pages) | Cited 4 times

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Silver halide (AgCl:AgBr) fibers were used for transmitting infrared radiation from a CO2 laser to an absorption cell, and from the cell to an infrared detector. The absorption of CO2 laser lines in ammonia (NH3) gas was measured in the remote cell. Use of infrared transmitting fibers for spectroscopy in the mid and far infrared and for remote sensing of gases, was demonstrated for the first time.
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07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
42.81.-i Fiber optics
51.70.+f Optical and dielectric properties
82.80.Dx Analytical methods involving electronic spectroscopy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Single‐channel injection locking of a diode‐laser array with a cw dye laser

J. P. Hohimer, A. Owyoung, and G. R. Hadley

Appl. Phys. Lett. 47, 1244 (1985); http://dx.doi.org/10.1063/1.96291 (3 pages) | Cited 31 times

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We report injection‐locking studies on a gain‐guided diode‐laser array using a single‐frequency cw tunable dye laser master oscillator. By injecting a single end element, both the spatial and spectral emission characteristics of the entire ten‐element array could be controlled. The injection‐locked array produced over 100 mW output in a single‐lobed far‐field beam (<0.5° angular width) with a bandwidth of less than 2 MHz. With 3 mW injection, locking occurred over a number of discrete frequency intervals (∼6 GHz wide). At higher power levels (12 mW), these intervals merged to form one continuous locking range >60 GHz wide. Furthermore, by varying the injection frequency, the far‐field emission angle of the array could be continuously scanned over several degrees at a rate of 2.3×10−2 deg/GHz.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.62.-b Laser applications

Energy spread of ions from Ga liquid metal ion sources at low emission currents

H. P. Mayer

Appl. Phys. Lett. 47, 1247 (1985); http://dx.doi.org/10.1063/1.96292 (2 pages) | Cited 1 time

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Measurements of the energy distribution of Ga liquid metal ion sources (LMIS) have been carried out using different emitters and tip currents between 0.5 and 3 μA. For LMIS operating at low emission voltages and with low tip currents, distributions as narrow as 2.3 eV full width at half‐maximum have been observed. These narrow distributions can only be observed if the emitter tip is placed very close (0.5 mm) to the extraction electrode.
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79.70.+q Field emission, ionization, evaporation, and desorption
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Bistable optical behavior of a nonlinear attenuated total reflection device: Resonant excitation of nonlinear guided modes

R. Reinisch, P. Arlot, G. Vitrant, and E. Pic

Appl. Phys. Lett. 47, 1248 (1985); http://dx.doi.org/10.1063/1.96293 (3 pages) | Cited 9 times

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We study the prism excitation of a nonlinear waveguide. The nonlinear medium is the substrate which exhibits Kerr effect. Our results show that such a device experiences optical bistability. We also show that there exists a close link between optical bistability and resonant excitation of nonlinear guided modes propagating along this nonlinear waveguide.
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42.79.Gn Optical waveguides and couplers
42.65.-k Nonlinear optics
42.25.Dd Wave propagation in random media

Observation of power instability and multimode behavior in a far‐infrared free‐electron laser

Avner Amir, Luis R. Elias, Dan J. Gregoire, R. James Hu, Jörg P. Kotthaus, Gerald Ramian, and Avinoam Stern

Appl. Phys. Lett. 47, 1251 (1985); http://dx.doi.org/10.1063/1.96294 (3 pages) | Cited 9 times

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Measurements of the time dependence and the frequency spectrum of the output power in the far‐infrared free‐electron laser at the University of California at Santa Barbara are reported. In typical light pulses of 20–50 μs we have observed unexpected oscillations of the laser output with a characteristic period of 5 μs. At the same time, the laser frequency swept over a discrete set of frequency modes, separated by 1.3 GHz. We also present measurements of the gain and loss of the optical mode and discuss the problem of the accelerator terminal voltage drop in a single electron beam pulse with relation to the light spectrum.
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52.59.Px Hard X-ray sources
42.55.-f Lasers
42.60.Fc Modulation, tuning, and mode locking

Nonlinear thin‐film guided waves in non‐Kerr media

G. I. Stegeman, J. Ariyasu, C. T. Seaton, T. P. Shen, and J. V. Moloney

Appl. Phys. Lett. 47, 1254 (1985); http://dx.doi.org/10.1063/1.96295 (3 pages) | Cited 17 times

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The power‐dependent wave vector is calculated for nonlinear waves guided by a thin film bounded by media whose dielectric constant varies as some arbitrary power of the optical field or saturates at high powers. The effect of such non‐Kerr‐like nonlinearities on the power‐dependent wave vector and field distributions is given for a number of potential devices proposed earlier for Kerr‐like media.
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78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
77.55.-g Dielectric thin films
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

Grating enhanced quantum well detector

K. W. Goossen and S. A. Lyon

Appl. Phys. Lett. 47, 1257 (1985); http://dx.doi.org/10.1063/1.96434 (3 pages) | Cited 55 times

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An infrared detector based on the excitation of carriers out of a modulation‐doped quantum well is theoretically investigated. The efficiency of the detector is increased by using a grating to enhance the fields in the well. Scattering effects are taken into account by designing the quantum well so that upon excitation carriers will escape in a short time compared to the time it takes to scatter back into the well. Despite this constraint, a quantum efficiency of 90% is shown to be possible for a GaAs‐AlGaAs quantum well with a carrier density of 1012 cm−2.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
42.79.Dj Gratings

Optical nonlinearity resulting from mobile carriers in semiconductor superlattices: Influence of higher minibands

C. M. de Sterke and D. G. Hall

Appl. Phys. Lett. 47, 1260 (1985); http://dx.doi.org/10.1063/1.96296 (3 pages) | Cited 2 times

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See Also: Erratum

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We have investigated the temperature dependence of χ(3) optical nonlinearities associated with mobile carriers in a superlattice. Our computer calculations show that at temperatures near 300 K, the population of higher minibands can significantly increase χ(3) over that predicted by considering only the lowest miniband. The magnitude of this increase is strongly correlated with the layer configuration of the superlattice and its associated band structure.
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42.65.-k Nonlinear optics
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Sensitive detection of NO2 using high‐frequency heterodyne spectroscopy with a GaAlAs diode laser

W. Lenth and M. Gehrtz

Appl. Phys. Lett. 47, 1263 (1985); http://dx.doi.org/10.1063/1.96297 (3 pages) | Cited 22 times

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Optical heterodyne spectroscopy has been performed by modulating the injection of a GaAlAs diode laser at 250 MHz. Sensitive and fast detection of NO2 was accomplished using phase‐sensitive detection electronics. By proper adjustment of the local oscillator phase the heterodyne beat signal induced by NO2 absorption lines could be detected against zero background. A minimum NO2 absorption of 1×10−6 was measured with an effective bandwidth of 6 Hz. Increasing the detection bandwidth and scanning the diode laser very rapidly permitted detection of 5×10−4 absorption on a 100‐ns time scale. The obtained results demonstrate that optical heterodyne spectroscopy with current modulated diode lasers offers the high sensitivity and fast time response required for the detection of gaseous species in pollution studies, combustion control, and industrial process monitoring.
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07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
51.70.+f Optical and dielectric properties
33.20.Ea Infrared spectra

Focusing surface waves using an axicon

Hayrettin Köymen and Abdullah Atalar

Appl. Phys. Lett. 47, 1266 (1985); http://dx.doi.org/10.1063/1.96298 (3 pages) | Cited 1 time

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Axicons are generators of waves which focus on a line. They are used in various imaging and nondestructive testing applications as bulk wave focusing devices with a very long depth of focus. In this letter, a new type of conical axicon is introduced and it is shown that this axicon, immersed in a liquid, insonifying a plane solid surface can be used to excite surface waves on the solid surface provided that the cone angle of the axicon coincides with the Rayleigh critical angle of the liquid‐solid interface. The generated surface waves focus into a diffraction‐limited spot. This new surface wave focusing scheme is easy to use, has a conversion efficiency and sensitivity far better than other existing techniques.
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43.35.Pt Surface waves in solids and liquids
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.58.+z Acoustical measurements and instrumentation

In situ compensation of surface acoustic wave filter response

R. W. Cohn and R. S. Wagers

Appl. Phys. Lett. 47, 1269 (1985); http://dx.doi.org/10.1063/1.96299 (3 pages)

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An experimental methodology is demonstrated for compensating the response of surface acoustic wave (SAW) bandpass filters. For a filter on (YZ) LiNbO3, we present measurements of changes in the SAW impulse and frequency response produced by in situ perturbations to the transducer’s apodization. Many transducer electrodes are perturbed in their length to determine filter sensitivity to electrode length variation. A methodology that is adaptive in these length variables is applied to determine the optimal apodization for the compensation of frequency domain sidelobes initially at the −26 dB level. They are deterministically reduced to the −39 dB level.
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43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
43.35.Pt Surface waves in solids and liquids

Acceleration sensitivities of surface acoustic waves propagating on a cantilever quartz beam

D. Hauden and B. Loewenguth

Appl. Phys. Lett. 47, 1271 (1985); http://dx.doi.org/10.1063/1.96300 (3 pages) | Cited 3 times

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High accuracy quartz accelerometers are built on the principle of an electronic servoloop circuit. We study the performance of open loop quartz accelerometers which have surface acoustic wave (SAW) delay lines (or resonator) as sensitive component mounted in an oscillator. Sensitivities versus bending forces and compression force are calculated as a function of quartz crystal anisotropy. Comparison with experimental values obtained with SAW oscillator shows that transverse acceleration has a very low sensitivity for single rotated cut (Y±θ).
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43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
06.30.Gv Velocity, acceleration, and rotation
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
72.50.+b Acoustoelectric effects

Spectral analysis of ion‐acoustic soliton excitation

Hong‐Young Chang, Chuong Lien, Sudewo Sukarto, Jacqueline Hill, Santwana Raychaudhuri, and Karl E. Lonngren

Appl. Phys. Lett. 47, 1274 (1985); http://dx.doi.org/10.1063/1.96301 (2 pages)

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The evolution of the frequency spectrum of a velocity modulated burst of ions from a fine mesh grid in a plasma is measured and interpreted. Initial frequency modulation close to the grid indicates a ‘‘klystron bunching’’ of the ions. The measured spectrum far from the grid indicates the excitation of an ion‐acoustic soliton.
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52.35.Fp Electrostatic waves and oscillations (e.g., ion-acoustic waves)
52.35.Mw Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.)
52.35.Sb Solitons; BGK modes
84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)

Thermionic electron emission of the barium tungsten bronzes Ba0.15WO3 and Ba0.21WO3

F. Zocchi

Appl. Phys. Lett. 47, 1276 (1985); http://dx.doi.org/10.1063/1.96302 (2 pages) | Cited 1 time

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The values of the work function and thermionic constant were determined for orthorhombic Ba 0.15WO3 (φ=2.04 eV, A=100 A/cm2 K2) and tetragonal Ba 0.21WO3 (φ=2.27 eV, A=88 A/cm2 K2). The different thermionic behavior of the two bronzes, shown even in the activation processes, cannot be explained in terms of their known structures, and therefore a more detailed structural analysis is suggested.
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79.40.+z Thermionic emission
73.30.+y Surface double layers, Schottky barriers, and work functions

Room‐temperature switching behavior of ferroelectric liquid crystals in thin cells

J. S. Patel

Appl. Phys. Lett. 47, 1277 (1985); http://dx.doi.org/10.1063/1.96303 (3 pages) | Cited 11 times

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Ferroelectric liquid crystal confined between glass plates with a conductive coating and an alignment promoting layer is examined for bistability and threshold behavior. Bistability and the presence of a dynamic threshold are established in thin cells around 1–2 μm thick. When 1/(pulse width) is plotted versus the voltage of the pulse required to switch the sample, a linear relationship between these two quantities is observed above about 4 V.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
78.20.Jq Electro-optical effects
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.60.Pg Display systems

Microscopic identification of defects propagating through the center of silicon and indium‐doped liquid encapsulated Czochralski grown GaAs using x‐ray topography

M. P. Scott, S. S. Laderman, and A. G. Elliot

Appl. Phys. Lett. 47, 1280 (1985); http://dx.doi.org/10.1063/1.96304 (3 pages) | Cited 5 times

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Extended defects in 3×1018 cm−3 Si‐doped and 2×1019 cm−3 In‐doped GaAs grown by the liquid encapsulated Czochralski technique are investigated using x‐ray topography and found to include straight and helicoidal dislocations propagating along the central axis of the ingot. These dislocations are not simply extensions of dislocations in the seed. The defect morphology is explained by strong interaction with native point defects and elastic strain associated with solute segregation at the growing interface.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Observation of fractional neutralization of slow multicharged ions by impact on a metal surface

R. H. Hughes, D. O. Pederson, and X. M. Ye

Appl. Phys. Lett. 47, 1282 (1985); http://dx.doi.org/10.1063/1.96305 (3 pages) | Cited 1 time

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We report the first observation of energy losses and fractional neutralization of slow multicharged ions incident on a metal surface. Data were obtained on 374 eV per charge aluminum 3≤z≤6 ions incident on an uncharacterized gold surface at a grazing angle of 7° and scattered through 14°. The resulting atoms consisted of about 60% neutral and 40% singly charged ions in the case of incident z=4 ions. The scattering process did not appreciably broaden the ion linewidths. The apparatus makes use of a laser generated heavy ion source.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Frequency dispersion of sidegating transconductance of GaAs junction field‐effect transistors

James W. Roach, H. H. Wieder, and Rainer Zuleeg

Appl. Phys. Lett. 47, 1285 (1985); http://dx.doi.org/10.1063/1.96306 (3 pages) | Cited 1 time

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The complex low‐frequency sidegating transconductance of GaAs enhancement‐mode junction field‐effect transistors exhibits dc bias‐dependent resonance and relaxation characteristics. These are attributed to the dynamic balance between emission and trapping of electrons by deep energy levels with activation energies of 0.5 and 0.7 eV located at the surface or within the semi‐insulating GaAs substrate.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Investigation of the surface photochemical basis for metal film nucleation in laser chemical vapor deposition

G. S. Higashi and L. J. Rothberg

Appl. Phys. Lett. 47, 1288 (1985); http://dx.doi.org/10.1063/1.96307 (3 pages) | Cited 31 times

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We report the results of ultraviolet irradiation of monolayers of organoaluminum complexes adsorbed to sapphire. Using surface vibrational spectroscopy, the compositional and structural changes caused by 248 and 193 nm surface illumination are documented. Electronic photochemistry of adsorbed trimethylaluminum is observed and can lead to nucleation of aluminum on the surface. A strong wavelength dependence to this process is observed which cannot be explained by assuming photochemical yields to be proportional to previously measured surface absorption cross sections. The implications for laser chemical vapor deposition of spatially localized metallic features are discussed.
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82.50.-m Photochemistry
82.60.Nh Thermodynamics of nucleation
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Growth of Hg1−xZnxTe by molecular beam epitaxy on a GaAs(100) substrate

S. Sivananthan, X. Chu, M. Boukerche, and J. P. Faurie

Appl. Phys. Lett. 47, 1291 (1985); http://dx.doi.org/10.1063/1.96308 (3 pages) | Cited 8 times

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We report for the first time the growth and characterization of n‐type and p‐type Hg1−xZnxTe layers grown by molecular beam epitaxy on GaAs (100) substrates. The HgZnTe grown over either (111)CdTe‖‖(100)GaAs or (100)CdTe‖‖(100)GaAs buffer layers preserved the orientation of the buffer. Electron diffraction and electrical characterization demonstrate the HgZnTe layers to be comparable to high quality HgCdTe of the same cut‐off frequency. Since the layers exhibit cut‐off wavelengths in far and mid‐infrared range and are of high quality, they appear to be candidates for infrared devices.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Optically activated semiconductors as repetitive opening switches

E. A. Chauchard, M. J. Rhee, and Chi H. Lee

Appl. Phys. Lett. 47, 1293 (1985); http://dx.doi.org/10.1063/1.96309 (3 pages) | Cited 5 times

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We demonstrate for the first time the operation of a semiconductor repetitive opening switch. A semiconductor is maintained in a conductive state by illumination with a cw argon laser light. The opening of the switch is obtained by interrupting the light. A turn‐off time of 1 ns has been achieved.
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84.32.Dd Connectors, relays, and switches
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
85.60.-q Optoelectronic devices

Photoluminescence of low‐energy ion bombarded silicon

R. J. Davis, H.‐U. Habermeier, and J. Weber

Appl. Phys. Lett. 47, 1295 (1985); http://dx.doi.org/10.1063/1.96310 (3 pages) | Cited 21 times

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Using photoluminescence we have examined defects introduced into silicon by low‐energy inert gas ion bombardment (ion beam etching or ion beam milling, with Ne+, Ar+, Kr+, and Xe+) in the 200–2000 eV ion energy range. The spectra indicate the presence of noble gas associated centers which appear to be identical to the defect which is responsible for the well‐known I1 spectrum (or W), except for modifications due to the interaction with the noble gas atoms. The appearance of the modified I1 spectra at these low bombardment energies suggests a simple structure of the underlying defects.
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78.40.Fy Semiconductors
61.80.Jh Ion radiation effects
71.35.-y Excitons and related phenomena

Thermal and chemical stability of Schottky metallization on GaAs

S. S. Lau, W. X. Chen, E. D. Marshall, C. S. Pai, W. F. Tseng, and T. F. Kuech

Appl. Phys. Lett. 47, 1298 (1985); http://dx.doi.org/10.1063/1.96311 (3 pages) | Cited 36 times

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The high‐temperature stability of Schottky barriers on GaAs has been correlated with the thermodynamic driving force for chemical reaction between the metallic contacts and the substrate. The chemical stability of a gate metallurgy can result in the stability of the electrical characteristics of the contact after high‐temperature anneal. Since single element metal contacts on GaAs are chemically unstable, thermally stable Schottky barriers are not expected from these systems. Alternatively, most of the common metal silicides are chemically stable on GaAs and hence are more likely to form Schottky barriers which are stable against high‐temperature annealing. The chemically stable silicides of Ni and Co, which exhibit low electrical resistivities, are suggested as improved gate metallurgies in self‐aligned metal‐semiconductor field‐effect transistor technologies.
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73.40.Sx Metal-semiconductor-metal structures
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Tv Field effect devices

Direct variation of metal‐GaAs Schottky barrier height by the influence of interface S, Se, and Te

J. R. Waldrop

Appl. Phys. Lett. 47, 1301 (1985); http://dx.doi.org/10.1063/1.96312 (3 pages) | Cited 29 times

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The electrical properties and interface chemistry of Schottky barrier contacts (Ag, Al, Au, Mn, Pd, and Ti) formed on n‐type GaAs (100) surfaces that had prior exposure to elemental S, Se, and Te are compared to those of ideal (metal deposited onto a clean surface) contacts. The interface Fermi energy EiF and interface chemistry during contact formation were investigated by x‐ray photoemission spectroscopy; the accompanying Schottky barrier height ϕB was measured by current‐voltage and capacitance‐voltage techniques. A substantial decrease in ϕB (and correlated change in EiF ) for Al and Mn contacts is associated with a contact metal‐chalcogen chemical reaction at the Schottky barrier interface, while some nonreactive noble metal‐chalcogen interfaces have a ϕB increase. By choice of contact metal and interface chalcogen a ϕB range of >0.6 eV is obtained (∼0.35 to 1.0 eV, which is >40% of the GaAs band gap) via corresponding changes in EiF.
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73.30.+y Surface double layers, Schottky barriers, and work functions
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
73.40.Ns Metal-nonmetal contacts
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