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15 Dec 1985

Volume 47, Issue 12, pp. 1239-1360

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Treatment of broadening in Monte Carlo calculations of quantum transport

J. Lin and L. C. Chiu

Appl. Phys. Lett. 47, 1304 (1985); http://dx.doi.org/10.1063/1.96435 (3 pages) | Cited 2 times

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By employing a simple two‐level system, it is shown that modification of the traditional Monte Carlo technique is necessary for solving the transport equation when quantum mechanical broadening is included. In Monte Carlo calculations, inclusion of broadening may lead to unphysical and catastrophic energy runaway if the quantum mechanical correlation energy is not properly accounted for.
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72.10.Bg General formulation of transport theory
71.70.-d Level splitting and interactions

Electrical property improvements in In‐doped dislocation‐free GaAs by bulk annealing

Jiro Osaka, Fumiaki Hyuga, and Kazuo Watanabe

Appl. Phys. Lett. 47, 1307 (1985); http://dx.doi.org/10.1063/1.96313 (3 pages) | Cited 10 times

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The effects of bulk annealing on the electrical properties of an In‐doped dislocation‐free semi‐insulating GaAs are investigated. The crystal is grown by a fully encapsulated Czochralski method using the vertical magnetic field. It was found that the EL2 concentration increases after isochronal bulk annealing for 5 h from 800 to 1100 °C. In addition, the activation efficiency of implanted Si was found to correlate to the annealing behavior of the defect.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
72.80.Ey III-V and II-VI semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
78.40.Fy Semiconductors

Lateral p‐n junction formation in GaAs molecular beam epitaxy by crystal plane dependent doping

D. L. Miller

Appl. Phys. Lett. 47, 1309 (1985); http://dx.doi.org/10.1063/1.96262 (3 pages) | Cited 29 times

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Lateral p‐n junctions have been formed during the growth of GaAs by molecular beam epitaxy. Using a GaAs substrate which consisted of side‐by‐side {100} and {111} A planes formed by plane‐selective etching, Si‐doped GaAs was found to grow with p‐type conductivity on the {111} A planes, while n‐type material was grown simultaneously on the {100} planes. n‐p‐n structures with p‐type regions as narrow as 2 μm were grown. Conductivity measurements on narrow stripes of p‐type material formed by GaAs growth on {111} A planes indicate that Si was efficiently incorporated as an acceptor under the growth conditions used for this experiment.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Localized epitaxial growth of C54 and C49 TiSi2 on (111)Si

M. S. Fung, H. C. Cheng, and L. J. Chen

Appl. Phys. Lett. 47, 1312 (1985); http://dx.doi.org/10.1063/1.96263 (3 pages) | Cited 38 times

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Both C54 and C49 structure TiSi2 were found to grow epitaxially on (111)Si. Epitaxial regions, as large as 15 μm in size, were observed. The orientation relationships between epitaxial C54‐TiSi2 and Si were determined to be [100]TiSi2//[111]Si, (004)TiSi2//(022)Si or [001]TiSi2//[111]Si, and (400)TiSi2//(022)Si, whereas those between C49‐TiSi2 and Si are [310]TiSi2//[112]Si and (130)TiSi2//(111)Si. Interfacial dislocations were identified to be of mixed type with (1)/(6)  〈112〉 Burgers vectors. The dislocation spacings were found to vary from 170 to 600 Å. Polytype structures with different spacings were observed by the lattice imaging method. The growth of the most conductive silicide epitaxially on silicon presents an exciting possibility to fabricate novel high‐speed devices.
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68.55.-a Thin film structure and morphology
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Influence of implantation induced damage in sapphire upon improvement of crystalline quality of silicon on sapphire

Y. Yamamoto, H. Kobayashi, T. Takahashi, and T. Inada

Appl. Phys. Lett. 47, 1315 (1985); http://dx.doi.org/10.1063/1.96264 (3 pages)

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Crystalline quality improvement of silicon on sapphire (SOS) was carried out using thermal regrowth following Si implantation at energies of 130 and 150 keV, where the projected range of Si corresponded to and exceeded the SOS film thickness, respectively. Under the latter implant condition, it has been shown from Rutherford backscattering spectrometry (RBS) measurements that damage in sapphire does not anneal out after annealing at 1000 °C. RBS and Hall measurements have revealed that the damage introduced into the sapphire during implantation limits the degree of improvement in crystallographic and electrical properties of SOS.
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61.80.Jh Ion radiation effects
68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Manufacturing process for interconnected submodules of hydrogenated amorphous silicon photovoltaic panels

S. C. Gau, H. Volltrauer, F. Faras, A. E. Delahoy, E. Eser, and Z. Kiss

Appl. Phys. Lett. 47, 1317 (1985); http://dx.doi.org/10.1063/1.96265 (3 pages) | Cited 4 times

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Large scale deposition of hydrogenated amorphous silicon (a‐Si) for photovoltaic panels is discussed. The ‘‘box carrier’’ concept is introduced for hydrogenated a‐Si deposition. The spectral response studies prove that cross contamination is not present. Using this new concept, the average of 72 panels in one run is 5.6%. An I‐V curve for a square foot panel with an efficiency of 7.2% is shown. The utilization efficiency of silane is much higher (61%) than what has previously been reported (8%).
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

A 19% efficient AlGaAs solar cell with graded band gap

G. F. Virshup, C. W. Ford, and J. G. Werthen

Appl. Phys. Lett. 47, 1319 (1985); http://dx.doi.org/10.1063/1.96266 (3 pages) | Cited 7 times

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An Al0.20Ga0.80As solar cell with a band gap graded from 1.64 eV at the junction to 1.72 eV at the surface has been fabricated using metalorganic chemical vapor deposition. An efficiency of 19.2% has been measured under 1‐sun, AM2 simulated conditions with an open circuit voltage of 1.18 V, a short circuit density of 14.5 mA/cm2, and a fill factor of 0.83.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
68.55.-a Thin film structure and morphology
85.60.Dw Photodiodes; phototransistors; photoresistors

Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon

K. Cho, M. Numan, T. G. Finstad, W. K. Chu, J. Liu, and J. J. Wortman

Appl. Phys. Lett. 47, 1321 (1985); http://dx.doi.org/10.1063/1.96267 (3 pages) | Cited 56 times

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Enhanced diffusion of ion implanted boron in silicon during the first few seconds (transient) of rapid thermal annealing (RTA) has previously tentatively been attributed to either interstitial boron diffusion or damage enhanced diffusion. We have performed various anneal sequences of 11B implanted Si combined with post‐implantation of 10B and measured the boron concentration profiles with secondary ion mass spectroscopy. The data show that the enhanced diffusion found in the tail of the profiles after RTA is not caused by fast diffusion of boron ending up at interstitial sites after the slowing down during implantation. Rather the enhanced diffusion in the tail is associated with the implantation damage annealing.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

A new one‐dimensional quantum well structure

Yia‐Chung Chang, L. L. Chang, and L. Esaki

Appl. Phys. Lett. 47, 1324 (1985); http://dx.doi.org/10.1063/1.96268 (3 pages) | Cited 65 times

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A new one‐dimensional quantum well structure is proposed. The structure is created by converting one side of the potential barrier of an asymmetric quantum well into a periodically indented potential. Both the electron and hole states are confined in the one‐dimensional channel adjacent to the indented region of the side potential barrier, making it possible to achieve enhanced exciton binding energies and oscillator strengths for optical properties.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
75.20.Ck Nonmetals

Elimination of ‘‘pair’’ defects from GaAs layers grown by molecular beam epitaxy

Young G. Chai, Y‐C. Pao, and T. Hierl

Appl. Phys. Lett. 47, 1327 (1985); http://dx.doi.org/10.1063/1.96269 (3 pages) | Cited 4 times

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In addition to ‘‘oval’’ defects, ‘‘pair’’ defects are observed on molecular beam epitaxially grown GaAs wafers. In this letter it is demonstrated that these defects originate from sulfur on the substrate surface caused by a 4:1:1 (H2SO4:H2O2:H2O) etch. The defects can be completely eliminated by dipping the substrate in 30% HCl solution for 5 min following a sulfuric acid etch.
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68.55.-a Thin film structure and morphology
81.65.-b Surface treatments

Galvanomagnetic luminescence of indium antimonide

Paul Berdahl and Louie Shaffer

Appl. Phys. Lett. 47, 1330 (1985); http://dx.doi.org/10.1063/1.96270 (3 pages) | Cited 5 times

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We report measurements of the absolute spectral intensity due to galvanomagnetic luminescence of intrinsic InSb at room temperature. Together with a calculation of carrier and photon transport, these measurements form the basis for a new technique for the determination of carrier lifetimes and diffusion lengths. The excess carrier lifetime for InSb is found to be 6 ns, and the ambipolar diffusion length at 1.9 T is 3 μm. The spectrally integrated luminescence has a bilinear form in terms of the exciting current density  j and magnetic field B: ΔF=GB j, where ΔF is the change in the total emitted radiant energy flux from the thermal equilibrium value ( j=0). In particular ΔF can be negative. The new thermodynamic transport coefficient G has the value 1.8 μW A−1 T−1 at 33 °C and decreases with increasing temperature.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.60.-b Other luminescence and radiative recombination
05.60.-k Transport processes

Measurement of the band gap of GexSi1−x/Si strained‐layer heterostructures

D. V. Lang, R. People, J. C. Bean, and A. M. Sergent

Appl. Phys. Lett. 47, 1333 (1985); http://dx.doi.org/10.1063/1.96271 (3 pages) | Cited 140 times

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We have used photocurrent spectroscopy to measure the optical absorption spectra of coherently strained layers of GexSi1−x grown on 〈001〉 Si by molecular beam epitaxy. A dramatic lowering of the indirect band gap, relative to that of unstrained bulk Ge‐Si alloys, is observed. Our results for 0≤x≤0.7 are in remarkably good agreement with recent calculations of the effects of misfit strain on the band edges of coherently strained Ge‐Si heterostructures. At x=0.6, the gap is lower than that of pure Ge.
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75.20.Ck Nonmetals
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Spatially resolved defect mapping in semiconductors using laser‐modulated thermoreflectance

D. Guidotti and H. M. van Driel

Appl. Phys. Lett. 47, 1336 (1985); http://dx.doi.org/10.1063/1.96272 (3 pages) | Cited 32 times

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We demonstrate that thermoreflectance can be observed when lattice heating is effected with an amplitude modulated laser. Changes in reflectivity are probed with a cw laser, and maps of inhomogeneous ion implantation and swirl precipitates in Si wafers are obtained.
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78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
81.70.-q Methods of materials testing and analysis
05.70.Ce Thermodynamic functions and equations of state
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

Infrared absorption band for substitutional nitrogen in silicon

H. J. Stein

Appl. Phys. Lett. 47, 1339 (1985); http://dx.doi.org/10.1063/1.96273 (3 pages) | Cited 19 times

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Formation and annealing characteristics for an infrared absorption band at 653 cm−1 in 14N‐implanted Si have been correlated with those for a distorted substitutional N center identified previously in electron paramagnetic resonance studies. It is concluded from this correlation and the observed frequency shift upon isotopic substitution of 15N that the 653 cm−1 band is a localized vibrational mode for substitutional 14N in Si.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
63.20.Pw Localized modes
81.40.Tv Optical and dielectric properties related to treatment conditions
61.72.U- Doping and impurity implantation

Nitrogen‐related deep electron traps in float zone silicon

K. Nauka, M. S. Goorsky, H. C. Gatos, and J. Lagowski

Appl. Phys. Lett. 47, 1341 (1985); http://dx.doi.org/10.1063/1.96274 (3 pages) | Cited 5 times

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Two deep levels (electron traps) associated with nitrogen were identified in high resistivity float zone silicon employing deep level transient spectroscopy. The levels are formed during annealing at high temperatures (≥900 °C). They exhibit activation energies of Ec −0.58 eV and Ec −0.5 eV. The electron capture cross section for the 0.58 eV level is about 5×10−14 cm2. The levels appear to be associated with complexes rather than isolated nitrogen atoms.
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78.40.Fy Semiconductors
61.72.U- Doping and impurity implantation
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Degradation‐free modulation‐doped field‐effect transistors grown by organometallic chemical vapor deposition

R. Bhat, W. K. Chan, A. Kastalsky, M. A. Koza, and P. S. Davisson

Appl. Phys. Lett. 47, 1344 (1985); http://dx.doi.org/10.1063/1.96275 (3 pages) | Cited 4 times

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Using AlGaAs and GaAs grown by organometallic chemical vapor deposition (OMCVD), we have fabricated high‐transconductance modulation‐doped field‐effect transistors which do not exhibit the severe electrical degradation in the dark at 77 K that is ordinarily observed in such devices. Such degradation has been attributed to defects in the n+‐AlGaAs. Experiments on ohmic test devices using different OMCVD grown structures suggest that the improvement is due to a drastically reduced charge polarization in the n+‐AlGaAs layer.
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85.30.Tv Field effect devices
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Resonant tunneling of two‐dimensional electrons through a quantum wire: A negative transconductance device

Serge Luryi and Federico Capasso

Appl. Phys. Lett. 47, 1347 (1985); http://dx.doi.org/10.1063/1.96276 (3 pages) | Cited 52 times

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A novel three‐terminal resonant‐tunneling structure is proposed in which the double potential barrier is defined within the plane of a two‐dimensional (2‐D) electron gas. The resonant tunneling of 2‐D electrons into a 1‐D ‘‘quantum wire’’ is controlled not only by a source‐to‐drain voltage but also by a gate potential. In addition to the negative differential resistance found in conventional resonant‐tunneling diodes, our device offers a negative transconductance. This feature is potentially useful for low‐power logic circuits.
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73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Raman, transmission electron microscopy, and conductivity measurements in molecular beam deposited microcrystalline Si and Ge: A comparative study

J. Gonzalez‐Hernandez, G. H. Azarbayejani, R. Tsu, and F. H. Pollak

Appl. Phys. Lett. 47, 1350 (1985); http://dx.doi.org/10.1063/1.96277 (3 pages) | Cited 79 times

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The structure of molecular beam deposited microcrystalline silicon and germanium films prepared under different growth conditions has been analyzed by conventional transmission electron microscope (TEM) and Raman scattering (RS) and compared to electrical conductivity experiments. The TEM measurements yield an average grain size L0 ranging from 200 Å to 1.5 μm. On the other hand, the line shape of the RS is determined by a mean free path related to the average separation l between defects (or impurities), where l≤150 Å. We find in a number of cases that the electrical conductivity is determined by l rather than L0. This experiment demonstrates the significance of RS as a structural characterization method when used in conjunction with other techniques such as TEM.
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68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.30.Hv Other nonmetallic inorganics
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Thin SiO2 insulators grown by rapid thermal oxidation of silicon

Mehrdad M. Moslehi, Steven C. Shatas, and Krishna C. Saraswat

Appl. Phys. Lett. 47, 1353 (1985); http://dx.doi.org/10.1063/1.96278 (3 pages) | Cited 33 times

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Rapid thermal oxidation of 〈100〉 silicon in dry oxygen ambient has been performed in a lamp‐heated rapid thermal processing system. For the first time we report fairly extensive experimental results on the initial regime of thermal oxidation of silicon by the rapid thermal oxidation technique. The results clearly indicate the nonlinear behavior of the rapid thermal oxidation growth kinetics in the short time regime, in contrast to some recent rapid thermal oxidation data in the literature which suggested linear growth kinetics. The kinetics data show an increasing growth rate as the rapid thermal oxidation time is reduced, the highest oxidation rate being for the shortest oxidation time. It is also revealed that simple extrapolation of the existing long time thin oxide growth models to the short time rapid thermal oxidation regime does not give a sufficiently precise prediction of the kinetics in the short time regime where other transient physical processes besides simple one‐species oxidant diffusion and interface reaction may play an important role.
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81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.40.Bj Oscillations, chaos, and bifurcations
68.55.-a Thin film structure and morphology

Response of piezoelectric lead metaniobate to high compressive stresses

A. Amin and S. J. Lukasiewicz

Appl. Phys. Lett. 47, 1356 (1985); http://dx.doi.org/10.1063/1.96279 (2 pages) | Cited 1 time

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The induced polarization, P3(C/m2), in piezoelectric lead metaniobate was examined as a function of monotonically increasing uniaxial stress parallel to the poling direction. Comparison to the induced polarization as extrapolated from small oscillating force measurements illustrates, as expected, a nonlinear response at high compressive stress levels. The stress level beyond which nonlinearities occur was determined
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77.22.Ej Polarization and depolarization
77.65.-j Piezoelectricity and electromechanical effects
62.20.-x Mechanical properties of solids
81.40.Rs Electrical and magnetic properties related to treatment conditions

Fabrication of submicron deep ultraviolet masks by ion microprojection

G. Stangl, F. G. Rüdenauer, G. Stengl, H. Löschner, W. Maurer, and P. Wolf

Appl. Phys. Lett. 47, 1358 (1985); http://dx.doi.org/10.1063/1.96280 (3 pages) | Cited 4 times

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Photolithographic masks with submicron resolution have been produced in a one‐step process by 1:10 ion microprojection of a stencil mask pattern into polymethyl methacrylate resist material. In the implanted pattern areas, light transmission is reduced for wavelengths extending into deep ultraviolet (DUV); thus, these patterns can be replicated into UV‐sensitive photoresists using, e.g., excimer laser radiation. In the present ion projection lithography machine a 2.5‐mm‐diam mask was produced using a single 2‐s exposure with 82 keV He+ ions. Replication in poly(butene‐1‐sulfone) resist was performed by single or double shot exposure using a KrF excimer laser (wavelength 248 nm). Resolutions exceeding 800 lp/mm were obtained in the replicated structures.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
61.72.U- Doping and impurity implantation
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)
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