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15 Jul 1985

Volume 47, Issue 2, pp. 71-180

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Enhanced thermal stability of single longitudinal mode coupled cavity lasers

John R. Andrews

Appl. Phys. Lett. 47, 71 (1985); http://dx.doi.org/10.1063/1.96255 (3 pages) | Cited 4 times

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Thermally induced changes in the length of the external resonator in a three‐mirror coupled cavity laser can enhance the temperature range for single longitudinal mode operation. The enhancement occurs when the length of the external resonator is altered to track the change in the effective length of the laser diode, hence maintaining feedback on the same longitudinal mode. We observe stable single longitudinal mode operation for 15 °C with a planar external mirror and for as much as 25 °C with a confocal spherical mirror in a coupled cavity device incorporating an AlGaAs laser diode at constant current. This is a three to fivefold enhancement over what would be expected if the passive cavity were of fixed length. The data are consistent with thermal compensation of the external cavity length to match the thermal effects on the refractive index of the AlGaAs diode.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Highly efficient neodymium:yttrium aluminum garnet laser end pumped by a semiconductor laser array

D. L. Sipes

Appl. Phys. Lett. 47, 74 (1985); http://dx.doi.org/10.1063/1.96256 (3 pages) | Cited 46 times

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In recent experiments, 80‐mW cw power in a single mode has been achieved from a neodymium: yttrium aluminum garnet (Nd:YAG) laser with only 1 W of electrical power input to a single semiconductor laser array pump. This corresponds to an overall efficiency of 8%, the highest reported cw efficiency for a Nd:YAG laser. A tightly focused semiconductor laser end pump configuration is used to achieve high pumping intensities (on the order of 1 kW/cm2), which in turn causes the photon to photon conversion efficiency to approach the quantum efficiency (76% for Nd:YAG at 1.06 μm pumped at 0.810 μm). This is achieved despite the dual‐lobed nature of the pump. Through the use of simple beam‐combining schemes (e.g., polarization coupling and multireflection point pumping), output powers over 1 W and overall electrical to optical efficiencies as high as 10% are expected.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Femtosecond solitary waves in optical fibers—beyond the slowly varying envelope approximation

D. N. Christodoulides and R. I. Joseph

Appl. Phys. Lett. 47, 76 (1985); http://dx.doi.org/10.1063/1.96257 (3 pages) | Cited 12 times

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We present a theoretical calculation which demonstrates that optical solitary waves can propagate in an optical fiber well into the femtosecond regime. Dispersive effects up to fourth order have been considered and more importantly, the ‘‘slowly varying envelope’’ approximation is not invoked. The optical fiber which can support such a wave must exhibit negative fourth‐order dispersion ( βIV0e <0) and must be used close to appropriate ‘‘operating’’ points. Use of such waves in optical fiber communication systems may finally result in the full exploitation of the bandwidth of light.
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42.81.-i Fiber optics
42.79.Gn Optical waveguides and couplers
42.30.-d Imaging and optical processing
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.65.-k Nonlinear optics

High‐frequency constricted mesa lasers

J. E. Bowers, B. R. Hemenway, A. H. Gnauck, T. J. Bridges, E. G. Burkhardt, D. P. Wilt, and S. Maynard

Appl. Phys. Lett. 47, 78 (1985); http://dx.doi.org/10.1063/1.96258 (3 pages) | Cited 6 times

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InGaAsP cw constricted mesa lasers at 1.3 μm are described which have a small‐signal 3‐dB bandwidth of 20 GHz at −70 °C. Large‐signal pseudorandom modulation at 8 Gb/s resulted in 100% optical modulation. The lasers were gain switched at 12 GHz with 100% optical modulation.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Microsecond duration optical pulses from a UV‐preionized XeCl laser

R. S. Taylor and K. E. Leopold

Appl. Phys. Lett. 47, 81 (1985); http://dx.doi.org/10.1063/1.96433 (3 pages) | Cited 22 times

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XeCl laser pulse durations of 1.5 μs (full width at half‐maximum) have been obtained using a recently developed UV‐preionized magnetically induced pulser laser excitation scheme.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Large‐signal dynamics of an ultrafast semiconductor laser at digital modulation rates approaching 10 Gbit/s

K. Y. Lau and A. Yariv

Appl. Phys. Lett. 47, 84 (1985); http://dx.doi.org/10.1063/1.96259 (3 pages) | Cited 4 times

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High‐fidelity pseudorandom digital modulation at 8.2 Gbit/s of an ultrahigh speed semiconductor laser is demonstrated. Studies using simple but representative pulse patterns at 10 Gbit/s give insights into the maximum digital modulation rate attainable from a given laser, as well as relations between large‐signal digital performance and small‐signal analog response.
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42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.55.Px Semiconductor lasers; laser diodes

Spectral windowing of frequency‐modulated optical pulses in a grating compressor

J. P. Heritage, R. N. Thurston, W. J. Tomlinson, A. M. Weiner, and R. H. Stolen

Appl. Phys. Lett. 47, 87 (1985); http://dx.doi.org/10.1063/1.96260 (3 pages) | Cited 30 times

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Spectral windowing or apodization of the spatially dispersed frequency components within a grating compressor has been used to control the temporal shape of compressed optical pulses. Windowing of undesirable high and low‐frequency components, which are not linearly chirped, results in nearly complete elimination of the energy in the wings of the compressed pulse. We have applied this technique to improve the quality of pulses from a mode‐locked neodymium: yttrium aluminum garnet laser compressed to less than 2 ps using a fiber and double‐pass grating pair with an internal aperture.
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42.60.Fc Modulation, tuning, and mode locking
42.81.-i Fiber optics
42.79.Ci Filters, zone plates, and polarizers

Array mode selection utilizing an external cavity configuration

Joseph Yaeli, William Streifer, Donald R. Scifres, Peter S. Cross, Robert L. Thornton, and Robert D. Burnham

Appl. Phys. Lett. 47, 89 (1985); http://dx.doi.org/10.1063/1.96261 (3 pages) | Cited 14 times

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We report operation of a ten‐stripe, gain‐guided, phase‐locked diode laser in an external cavity configuration. The laser radiates in a single narrow (1°) lobe. Such lasers generally lase in the highest order array mode, L=10, which radiates in a twin‐lobe far‐field pattern. With one antireflection‐coated facet and a slit spatial filter, the laser has been operated in the L=1, 2, 3 or 10 array modes. A theoretical explanation of the spatial filter function is included.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Elastic behavior of polycrystalline Nb3Sn at low temperatures

M. Poirier, F. Laroche, M. Martin, and J. F. Bussière

Appl. Phys. Lett. 47, 92 (1985); http://dx.doi.org/10.1063/1.96418 (3 pages) | Cited 1 time

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The elastic constants of polycrystalline Nb3Sn were determined as a function of temperature when the samples were submitted to uniaxial tensile stress. The Young’s (E) and shear (G) moduli were obtained from an ultrasonic pulse transmission technique in the range 4–300 K. Their behavior with temperature and applied stress is discussed in terms of the martensitic phase transformation occurring at ∼43 K and the ferroelastic character of the tetragonal phase (T <43 K). Uniaxial tensile stress is found to stiffen the moduli at all temperatures by stabilizing the crystal structure and by progressively eliminating the domains in the tetragonal phase.
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62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants

Laser enhanced metalorganic chemical vapor deposition crystal growth in GaAs

Yoshinobu Aoyagi, Satoshi Masuda, Susumu Namba, and Atsutoshi Doi

Appl. Phys. Lett. 47, 95 (1985); http://dx.doi.org/10.1063/1.96208 (2 pages) | Cited 34 times

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See Also: Erratum

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An enhanced crystal growth of GaAs is observed in metalorganic chemical vapor deposition (MOCVD) under laser illumination. It is difficult to understand this enhancement effect only by a pyrolitic effect and we should consider photochemical processes like photoassisted catalytic or surface effect. This laser enhancement makes patterned crystal growth in MOCVD possible.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
82.50.-m Photochemistry

Surface morphology of oxidized and ion‐etched silicon by scanning tunneling microscopy

R. M. Feenstra and G. S. Oehrlein

Appl. Phys. Lett. 47, 97 (1985); http://dx.doi.org/10.1063/1.96431 (3 pages) | Cited 59 times

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The surface morphology of silicon (100) wafers has been measured by scanning tunneling microscopy. Samples which were bombarded with low‐energy argon ions are found to have an average root‐mean‐square roughness of 4.0 Å, and the surfaces are covered with characteristic 50‐Å‐diam hillocks. The roughness of nonbombarded (control) samples is observed to be 1.8 Å, and this roughness arises in part from disorder at the interface between a native oxide and the silicon substrate.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.65.-b Surface treatments

Reflection high‐energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements

J. H. Neave, P. J. Dobson, B. A. Joyce, and Jing Zhang

Appl. Phys. Lett. 47, 100 (1985); http://dx.doi.org/10.1063/1.96281 (3 pages) | Cited 356 times

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A simple extension of the reflection high‐energy electron diffraction oscillation technique to vicinal surfaces provides a means of studying surface diffusion during molecular beam epitaxial growth. The basis of the method is described and some preliminary results for Ga diffusion during the growth of GaAs films with (001) 2×4 and 3×1 reconstructed surfaces are presented.
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66.30.J- Diffusion of impurities
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology

Periodic domain walls and ferroelastic bubbles in neodymium pentaphosphate

S. W. Meeks and B. A. Auld

Appl. Phys. Lett. 47, 102 (1985); http://dx.doi.org/10.1063/1.96282 (3 pages) | Cited 15 times

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The first observation of accurately periodic ferroelastic domains in neodymium pentaphosphate (NPP) is reported. A description is given of the nucleation process of these periodic domains in terms of a newly discovered phenomena of ferroelastic bubbles. These periodic arrays have been shown to be tunable from 70 to less than 0.5 μm. Device applications of these arrays as tunable active optical Bragg gratings and acoustic filters are discussed.
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77.80.Dj Domain structure; hysteresis
61.72.Mm Grain and twin boundaries
42.79.Dj Gratings
43.58.+z Acoustical measurements and instrumentation

Pressure dependence of arsenic diffusivity in silicon

Eric Nygren, Michael J. Aziz, David Turnbull, John M. Poate, Dale C. Jacobson, and Robert Hull

Appl. Phys. Lett. 47, 105 (1985); http://dx.doi.org/10.1063/1.96283 (3 pages) | Cited 20 times

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The diffusivity of implanted As in crystalline Si has been measured using Rutherford backscattering and channeling for specimens annealed at temperatures between 850 and 1000 °C under hydrostatic pressures up to 30 kbar. The diffusivity, at a given temperature, was found to increase with pressure with a maximum increase of a factor of 10. This diffusivity enhancement can be described by an average activation volume of −5.7±0.8 cm3/mole. The activation enthalpy ranges from an ambient value of 4.5 to 3.6 eV at 30 kbar.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
61.72.jd Vacancies
61.72.jj Interstitials

Donor neutralization in GaAs(Si) by atomic hydrogen

J. Chevallier, W. C. Dautremont‐Smith, C. W. Tu, and S. J. Pearton

Appl. Phys. Lett. 47, 108 (1985); http://dx.doi.org/10.1063/1.96284 (3 pages) | Cited 146 times

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Hydrogen plasma exposure of n‐type GaAs(Si) at 250 °C results in a decrease of the free‐carrier concentration by several orders of magnitude. This neutralization effect has been demonstrated in silicon‐doped layers grown by molecular beam epitaxy or formed by annealed implants as well as in bulk material. The same effect is produced electrochemically (H3PO4 electrolyte), whereas helium plasma exposure has no effect, thus confirming the role of hydrogen insertion. The hydrogen penetration depth into GaAs(Si) is inversely dependent on the Si concentration. Recovery of the electrical activity follows first order dissociation kinetics with a dissociation energy of 2.1 eV. Complete restoration of free‐carrier concentration occurs by heating at 420 °C for less than 3 min. Extrapolated to low temperatures, these results imply many years of stability at 150 °C or below.
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78.40.Fy Semiconductors
61.72.U- Doping and impurity implantation
81.40.Rs Electrical and magnetic properties related to treatment conditions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Room‐temperature operation of optically pumped InGaAsSb/AlGaAsSb double‐heterostructure laser at ≂2 μm

B. V. Dutt, H. Temkin, E. D. Kolb, and W. A. Sunder

Appl. Phys. Lett. 47, 111 (1985); http://dx.doi.org/10.1063/1.96285 (3 pages) | Cited 5 times

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Optically induced room‐temperature lasing at ≂2 μm of the InGaAsSb/AlGaAsSb double heterostructures is reported. The growth of the quaternary antimonide structures lattice matched to GaSb substrates by liquid phase epitaxy is described. The optical thresholds and their temperature dependence are comparable to the InGaAsP devices operating at 1.55‐μm wavelength regions.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Preferential nucleation along SiO2 steps in amorphous Si

M. Moniwa, M. Miyao, R. Tsuchiyama, A. Ishizaka, M. Ichikawa, H. Sunami, and T. Tokuyama

Appl. Phys. Lett. 47, 113 (1985); http://dx.doi.org/10.1063/1.96286 (3 pages) | Cited 13 times

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Annealing characteristics for amorphous Si film deposited on an SiO2 layer were investigated with the hope that this would throw further light on aspects of solid phase epitaxy. Preferential nucleation, which initiated from the bottom region of deposited Si film, was found along SiO2 steps. The activation energy for the growth speed of the nuclei was evaluated to be 1.7 eV. As this value is significantly smaller than 2.0 eV, the bond breaking energy of Si, stress originating mainly from the thermal expansion difference between SiO2 and Si, is considered to be the driving force.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
68.55.-a Thin film structure and morphology
65.40.De Thermal expansion; thermomechanical effects

Current‐voltage relation in a time‐dependent diode

Abraham Kadish, William Peter, and Michael E. Jones

Appl. Phys. Lett. 47, 115 (1985); http://dx.doi.org/10.1063/1.96287 (3 pages) | Cited 4 times

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A simple time‐dependent relation between the current and voltage pulse in a one‐dimensional diode has been obtained. The relation is applicable to diodes in which the voltage or current pulse changes appreciably during the beam transit time across the diode gap. A simple application of the results to eliminating current transients in ion diodes is presented.
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52.75.Fk Magnetohydrodynamic generators and thermionic convertors; plasma diodes
52.59.Mv High-voltage diodes
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Band‐gap tailoring in amorphous germanium‐nitrogen compounds

I. Chambouleyron

Appl. Phys. Lett. 47, 117 (1985); http://dx.doi.org/10.1063/1.96288 (3 pages) | Cited 14 times

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In this letter some properties of off‐stoichiometric amorphous germanium‐nitrogen compounds are presented. It is shown that the inclusion of nitrogen atoms in the Ge network produces important changes in the optical and electrical properties of the material. The samples were prepared by rf sputtering a Ge target in an argon plus nitrogen atmosphere. Optical transmission and dark conductivity versus temperature measurements are presented and discussed. The preparation conditions permitted the variation of the optical band gap in a continuous way between 0.9 and 2.7 eV. As expected for unhydrogenated samples, the dark conductivity measurements indicate a high density of states in the pseudogap, confirmed by an ill‐defined activation energy. Preparation conditions that might improve the transport properties are indicated.
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75.20.Ck Nonmetals
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
71.23.-k Electronic structure of disordered solids

Rapid thermal annealing of Si implanted GaAs for power field‐effect transistors

H. Kanber, W. B. Henderson, R. C. Rush, M. Siracusa, and J. M. Whelan

Appl. Phys. Lett. 47, 120 (1985); http://dx.doi.org/10.1063/1.96289 (3 pages) | Cited 11 times

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Rapid thermal annealing (RTA) for the electrical activation of 300‐keV Si+ implants in GaAs at doses of (6–8) ×1012 cm−2 is shown to be superior to conventional annealing. Higher gateless field‐effect transistor saturation currents and greater uniformities of the saturation current were measured as well as higher peak electron concentrations and mobilities. The advantages of RTA for the removal of ion implantation damage in GaAs are attributed to the heating rate being two orders of magnitude greater than that for furnace annealing. Characteristics are given for single‐ and four‐cell GaAs power metal‐semiconductor field‐effect transitions fabricated using the above implant and optimized RTA conditions. A 1‐μm gate length by 2400‐μm gate width device has demonstrated an output power of 1.73 W with 4.9 dB associated gain, 30% power‐added efficiency, and 8.1 dB linear gain at 10 GHz.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation
85.30.Tv Field effect devices
81.40.Rs Electrical and magnetic properties related to treatment conditions

Superficial image emphasis lithography

Tadahito Matsuda, Tetsuyoshi Ishii, and Katsuhiro Harada

Appl. Phys. Lett. 47, 123 (1985); http://dx.doi.org/10.1063/1.96235 (3 pages) | Cited 3 times

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A new approach to electron beam lithography for device fabrications is described. This technique transfers relief images formed at the superficial layer of a positive resist inversely to the bottom layer of the resist. The technique can drastically improve the resolution and linewidth accuracy of delineated patterns by reducing proximity effects and the influence of incident beam spread. Writing time can also be reduced. 0.2‐μm very large scale integration patterns and feature with 250‐Å linewidth less than the incident beam size have been successfully produced.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
41.75.Fr Electron and positron beams
79.20.Kz Other electron-impact emission phenomena
81.65.-b Surface treatments

Investigation of the properties of organometallic vapor phase epitaxially grown AlGaAs/GaAs heterostructures using Raman scattering

J. R. Shealy, C. F. Schaus, and G. W. Wicks

Appl. Phys. Lett. 47, 125 (1985); http://dx.doi.org/10.1063/1.96236 (3 pages) | Cited 6 times

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The growth of AlGaAs/GaAs heterostructures by low pressure organometallic vapor phase epitaxy was studied using Raman spectroscopy on a series of multilayer structures. Growth conditions were chosen to allow the investigation of the effects of growth rate and growth interruption during the formation of each type of interface (aluminum ‘‘turn on’’ and ‘‘turn off’’). This study represents the first report on the use of Raman for the quantitative measurement of the alloy composition in each region of a superlattice structure, where the observation is made that an extended growth interruption is required for the growth of thin GaAs regions (less than 100 Å) over AlGaAs (Al ‘‘turn off’’) while the other interface requires no growth interruption.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.30.Hv Other nonmetallic inorganics
68.60.-p Physical properties of thin films, nonelectronic

Epitaxial growth of FeSi2 in Fe thin films on Si with a thin interposing Ni layer

H. C. Cheng, T. R. Yew, and L. J. Chen

Appl. Phys. Lett. 47, 128 (1985); http://dx.doi.org/10.1063/1.96237 (3 pages) | Cited 21 times

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Thin interposing Ni layers between Fe thin films and substrate Si have been shown to be very effective in inducing the growth and improving the quality of epitaxial FeSi2 on silicon. The formation of a transition layer with graded concentration is conceived to facilitate the epitaxial growth of FeSi2 on silicon. The thin interposing layer scheme may be extended to promote the epitaxial growth of a number of refractory silicides on silicon.
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68.55.-a Thin film structure and morphology

Implantation disordering of AlxGa1−xAs superlattices

P. Gavrilovic, D. G. Deppe, K. Meehan, N. Holonyak, J. J. Coleman, and R. D. Burnham

Appl. Phys. Lett. 47, 130 (1985); http://dx.doi.org/10.1063/1.96238 (3 pages) | Cited 62 times

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Data are presented showing that layer disordering of AlxGa1−xAs‐GaAs quantum well heterostructures (QWH’s) or superlattices (SL’s) via ion implantation can be effected with a lattice constituent (Al), an inert ion (Kr), or an active impurity (Zn, Si, S, etc.). A doping impurity that diffuses (during annealing) via multiple sites, making column III sites available for Al‐Ga interchange, is most effective in layer disordering. However, any implanted ion is itself relatively effective in converting an AlxGa1−xAs‐GaAs QWH or SL to bulk‐crystal AlyGa1−yAs (0≤y≤x) via damage‐induced disordering.
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61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
68.55.-a Thin film structure and morphology

Growth of high quality epitaxial PbSe onto Si using a (Ca,Ba)F2 buffer layer

H. Zogg and M. Hüppi

Appl. Phys. Lett. 47, 133 (1985); http://dx.doi.org/10.1063/1.96239 (3 pages) | Cited 35 times

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Epitaxial layers of PbSe have been grown onto Si(111) by vacuum deposition techniques using a (Ca,Ba)F2 buffer film. For lattice match, the buffer layer is graded with CaF2 at the Si interface and BaF2 at the PbSe interface. Like bulk BaF2, this buffer layer forms a suitable support for the growth of high quality PbSe. The layers grown exhibit smooth surfaces and mobilities as high as those of bulk PbSe, i.e., ∼3×104 cm2 V−1 s−1 at 77 K and >1.2×105 cm2 V−1 s−1 below 20 K. These results are very promising for the fabrication of heteroepitaxial monolithic integrated circuits, with, for example, photovoltaic (Pb,Sn) (S,Se,Te) narrow gap semiconductor infrared detectors on silicon.
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68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.60.Gz Photodetectors (including infrared and CCD detectors)
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