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1 Aug 1985

Volume 47, Issue 3, pp. 183-336

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Single‐wavelength operation of the hybrid‐external Bragg‐reflector‐waveguide laser under dynamic conditions

J. M. Hammer, C. C. Neil, N. W. Carlson, M. T. Duffy, and J. M. Shaw

Appl. Phys. Lett. 47, 183 (1985); http://dx.doi.org/10.1063/1.96209 (3 pages) | Cited 7 times

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Dynamic wavelength stabilization of an AlGaAs diode laser has been demonstrated. The diode laser is butt coupled to a stripe‐loaded optical waveguide which contains a Bragg reflecting grating. The laser is pulsed with 50‐ns‐long, 25% duty cycle, 100% modulation depth pulses and the waveguide output is observed to remain at single wavelengths over a peak current range of 120–160 mA and 15 °C temperature variations.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Low loss GaAs optical waveguides grown by the metalorganic chemical vapor deposition method

K. Hiruma, H. Inoue, K. Ishida, and H. Matsumura

Appl. Phys. Lett. 47, 186 (1985); http://dx.doi.org/10.1063/1.96210 (2 pages) | Cited 13 times

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In order to realize the low loss ridge optical waveguide, high‐purity GaAs and Ga1−xAlxAs (0<x<0.1) epitaxial layers were grown by the metalorganic chemical vapor deposition method. The residual free‐carrier concentration was reduced to 1014 cm−3 after ten samples had been grown in the same reactor. Ridge optical waveguides fabricated showed propagation losses of 0.8 dB/cm for the GaAs homostructure waveguide and of 0.2 dB/cm for the GaAs‐GaAlAs heterostructure waveguide at 1.3‐μm wavelength.
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42.79.Gn Optical waveguides and couplers
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Monolithic integration of a lens inside a diode‐laser cavity for beam convergence

S. Mukai, H. Yajima, Y. Tsunekawa, and Y. Takabe

Appl. Phys. Lett. 47, 188 (1985); http://dx.doi.org/10.1063/1.96211 (3 pages) | Cited 2 times

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A lens is monolithically integrated inside a diode‐laser cavity for the first time. The lens is formed on one end of the mesa‐type waveguide by making the equivalent refractive index lower toward the edges of the mesa. The lens makes the phase front of the lasing mode concave at the facet. Correspondingly, a (laterally) converging laser beam is realized without using any separate optical components. A numeric analysis of the beam convergence is also given.
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42.82.-m Integrated optics
42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Wavelength‐selective voltage‐tunable photodetector made from multiple quantum wells

T. H. Wood, C. A. Burrus, A. H. Gnauck, J. M. Wiesenfeld, D. A. B. Miller, D. S. Chemla, and T. C. Damen

Appl. Phys. Lett. 47, 190 (1985); http://dx.doi.org/10.1063/1.96212 (3 pages) | Cited 42 times

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We show that a pin‐doped multiple quantum well (MQW) diode can be used as a photodetector whose voltage of maximum photocurrent is wavelength dependent. The voltage of maximum photocurrent can be located accurately and related to the wavelength of the incident light, allowing measurements of the wavelength with a precision of 0.03 Å=1.2 GHz. This provides a simple, compact, solid‐state device that can be simultaneously used to measure the intensity and wavelength of an optical beam. Furthermore, the device shows high responsivity, low dark current, and fast response.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Dw Photodiodes; phototransistors; photoresistors

Dependence of threshold current on the number of wells in AlGaAs‐GaAs quantum well lasers

P. Blood, E. D. Fletcher, and K. Woodbridge

Appl. Phys. Lett. 47, 193 (1985); http://dx.doi.org/10.1063/1.96213 (3 pages) | Cited 10 times

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GaAs‐AlGaAs multiple quantum well injection lasers have been grown by molecular beam epitaxy with different numbers (N) of uncoupled GaAs wells 25 Å wide symmetrically disposed about the center of a 4000‐Å‐wide waveguide. The devices emit at about 770 nm and for N=4 the broad area threshold current density is 1.1 kA cm−2. The threshold current increases with increasing N (2<N<40) and this can be accounted for by changes in the optical confinement factor and the active ‘‘volume,’’ which implies that changes in capture probability with N in this structure are small.
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42.55.Px Semiconductor lasers; laser diodes

Lateral coupled cavity semiconductor laser

J. Salzman, R. Lang, and A. Yariv

Appl. Phys. Lett. 47, 195 (1985); http://dx.doi.org/10.1063/1.96214 (3 pages) | Cited 2 times

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We report the fabrication and operation of a lateral coupled cavity semiconductor laser that consists of two phase‐locked parallel lasers of different lengths and with separate electrical contacts. Mode selectivity that results from the interaction between the two supermodes is investigated experimentally. Frequency selectivity and tunability are obtained by controlling the current to each laser separately. Highly stable single mode operation is also demonstrated.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Evidence of mode splitting in a single mode, homogeneously broadened Raman laser

Dhruba J. Biswas and Robert G. Harrison

Appl. Phys. Lett. 47, 198 (1985); http://dx.doi.org/10.1063/1.96215 (3 pages) | Cited 3 times

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Self‐pulsating instabilities in a detuned single mode, homogeneously broadened Raman laser are shown here to provide evidence of spontaneous mode splitting in this system.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Picosecond degenerate four‐wave mixing in soluble polydiacetylenes

W. M. Dennis, W. Blau, and D. J. Bradley

Appl. Phys. Lett. 47, 200 (1985); http://dx.doi.org/10.1063/1.96216 (3 pages) | Cited 23 times

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The observation of optical phase conjugation utilizing the intrinsic Kerr‐like nonlinear susceptibilities of two soluble polydiacetylenes is reported. Phase conjugate reflectivities of up to 40% were observed on a timescale of ≲100 ps and a value of χ(3)xyyx =7×10−12 esu evaluated.
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42.65.-k Nonlinear optics

Spot size dependence of switching power for an optically bistable InSb element

D. J. Hagan, H. A. MacKenzie, J. J. E. Reid, A. C. Walker, and F. A. P. Tooley

Appl. Phys. Lett. 47, 203 (1985); http://dx.doi.org/10.1063/1.96217 (3 pages) | Cited 8 times

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The dependence of switching power upon input beam spot radius for an optically bistable InSb étalon has been measured. The results show that the irradiance required for switching increases as the spot radius is reduced. There is no evidence of any lower limit to the switching power, even for spot radii much less than the ambipolar diffusion length. Studies of the transmitted beam intensity profile in the near‐field demonstrate the role of diffusion in our observations. The implications of our results for digital optical processing are briefly discussed.
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42.65.-k Nonlinear optics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
42.82.-m Integrated optics

Generation of intense tunable picosecond pulses in the far‐infrared

M. Berg, C. B. Harris, T. W. Kenny, and P. L. Richards

Appl. Phys. Lett. 47, 206 (1985); http://dx.doi.org/10.1063/1.96218 (3 pages) | Cited 4 times

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Continuously tunable far‐infrared (FIR) picosecond pulses have been generated from 20 to 200 cm−1 through the parametric interaction of two visible pulses. Pulse energies were generated up to 3 nJ, which are sufficient for time‐resolved spectroscopy. The quantum efficiency of 0.1–0.3% was surprisingly constant over this frequency range considering the large variations in FIR absorption, diffraction, and phonon resonance enhancement. The depletion of the visible pulse and the dependence of the FIR energy on pump power were typical of a saturated process. However, the FIR energy showed unexpectedly large pulse‐to‐pulse fluctuations. Understanding the origin of these fluctuations may lead to substantial improvements in the average efficiency.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Subharmonic bifurcations and irregular pulsing behavior of modulated semiconductor lasers

Y. C. Chen, H. G. Winful, and J. M. Liu

Appl. Phys. Lett. 47, 208 (1985); http://dx.doi.org/10.1063/1.96219 (3 pages) | Cited 47 times

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We report the observation of subharmonic bifurcations and irregular pulsing behavior in the output of directly modulated diode lasers. The bifurcation sequence differs from the predicted scenarios most noticeably in the presence of large intrinsic fluctuations which impede any stable period‐two oscillations for non‐self‐pulsing lasers and period‐four oscillations for self‐pulsing lasers. The nondeterministic noise makes it difficult to observe high‐period bifurcation and chaotic behavior in semiconductor lasers by direct current modulation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.65.-k Nonlinear optics

Minimizing dc drift in LiNbO3 waveguide devices

C. M. Gee, G. D. Thurmond, H. Blauvelt, and H. W. Yen

Appl. Phys. Lett. 47, 211 (1985); http://dx.doi.org/10.1063/1.96220 (3 pages) | Cited 11 times

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Improved stability against electrical dc bias drift has been demonstrated in LiNbO3 electro‐optic modulators by replacing the commonly used SiO2 buffer layer with indium tin oxide (ITO), a transparent conductor. The long term drift of the modulators having an ITO buffer layer with a sheet resistivity of ∼20 Ω/☒ is less than 0.3% in 8 h. The mechanism of the dc drift phenomenon is discussed using an electrical equivalent circuit model of the modulator.
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73.61.Ng Insulators
78.20.Jq Electro-optical effects
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

Self‐induced polarization changes in birefringent optical fibers

Herbert G. Winful

Appl. Phys. Lett. 47, 213 (1985); http://dx.doi.org/10.1063/1.96221 (3 pages) | Cited 67 times

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Exact solutions are presented for the intensity‐dependent polarization state of a light wave in a birefringent optical fiber. The theory takes into account both the linear polarization evolution and the nonlinear ellipse rotation. It is shown that, contrary to current belief, self‐induced polarization changes are possible even with equal excitation of the fiber’s principal axes. The theory is applicable to the operation of recently demonstrated fiber‐optic logic gates, pulse shapers, and intensity discriminators.
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42.81.-i Fiber optics
63.10.+a General theory
42.25.Lc Birefringence
42.25.Ja Polarization

Laser photochemical fabrication of phase‐controlled 160‐nm period gratings by stimulated second‐order surface plasma wave scattering

D. J. Ehrlich and S. R. J. Brueck

Appl. Phys. Lett. 47, 216 (1985); http://dx.doi.org/10.1063/1.96222 (3 pages) | Cited 7 times

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Well‐controlled 160‐nm period gratings have been fabricated by employing surface plasma wave scattering obtained during laser photodeposition. Extended range phase control and simultaneous period halving have been demonstrated by seeding of second‐order scattering in a manner analogous to injection locking and second‐Stokes scattering. This technique may be useful for the fabrication of <100‐nm period structures.
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42.79.Dj Gratings
42.62.-b Laser applications
42.65.-k Nonlinear optics
73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)

GaAs sawtooth superlattice laser emitting at wavelengths λ>0.9 μm

E. F. Schubert, A. Fischer, Y. Horikoshi, and K. Ploog

Appl. Phys. Lett. 47, 219 (1985); http://dx.doi.org/10.1063/1.96223 (3 pages) | Cited 20 times

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A new type of semiconductor superlattice laser grown by molecular beam epitaxy is realized in GaAs. The active region of the injection laser consists of alternating n and p Dirac‐delta doped layers resulting in a sawtooth‐shaped conduction‐band and valence‐band edge. The band gap of this new GaAs superlattice is smaller than the GaAs bulk band gap. Room‐temperature operation of broad‐area GaAs sawtooth superlattice (STS) injection lasers is demonstrated at a wavelength of 905 nm. The threshold current density of the STS laser is 2.2 kA/cm2.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology

Monolithically integrated thermoelectric controlled laser diode

N. K. Dutta, T. Cella, R. L. Brown, and D. T. C. Huo

Appl. Phys. Lett. 47, 222 (1985); http://dx.doi.org/10.1063/1.96224 (3 pages) | Cited 8 times

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The fabrication and performance characteristics of a monolithically integrated thermoelectric controlled laser diode are described. The thermoelectric element is the n‐InP substrate. The lasers (λ∼1.51 μm InGaAsP) have threshold currents of ∼20 mA and operate kink free to >10 mW/facet. A variation of active region temperature of ± 2.5 °C has been achieved using 50 mA of thermoelectric controller current. The observed frequency tuning rate associated with this temperature shift is ∼0.5 GHz/mA. The device is useful for applications that require a high degree of frequency stability or small frequency tuning. Some potential lightwave system applications are in single‐frequency transmission systems, coherent transmission systems, optical amplifiers, resonant external cavity modulators, and injection locking.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Proton ring trapping in a gated magnetic mirror

P. D. Pedrow, J. B. Greenly, D. A. Hammer, and R. N. Sudan

Appl. Phys. Lett. 47, 225 (1985); http://dx.doi.org/10.1063/1.96225 (2 pages) | Cited 3 times

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An axis‐encircling proton ring has been trapped for times (≊4 μs) much longer than the ion cyclotron period (≊80 ns). The rings, with mean radius 10 cm and with particle energies ≤430 keV, made eight passes through the 1.5‐m‐long magnetic mirror well with static and puffed hydrogen used for space‐charge neutralization. The measured proton inventory was typically 2 × 1015 protons during the first pass and 2 × 1013 protons during the eighth and final pass. With a central solenoidal field of 0.8 T, the peak diamagnetism and azimuthal current density of the injected ring were typically 10 mT (100 G) and 10 A/cm2, respectively.
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52.55.Pi Fusion products effects (e.g., alpha-particles, etc.), fast particle effects
28.52.Av Theory, design, and computerized simulation
52.55.-s Magnetic confinement and equilibrium
52.59.Mv High-voltage diodes
52.55.Jd Magnetic mirrors, gas dynamic traps

Effect of wall material on H− production in a multicusp source

K. N. Leung, K. W. Ehlers, and R. V. Pyle

Appl. Phys. Lett. 47, 227 (1985); http://dx.doi.org/10.1063/1.96226 (2 pages) | Cited 12 times

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The effect of wall material on volume H− production in a magnetically filtered multicusp source has been investigated. Under the same discharge conditions, Al and Cu generally produce the highest H− ion current. It is shown that secondary electrons emitted from wall surfaces can account for the difference in H− yield.
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29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
52.55.Lf Field-reversed configurations, rotamaks, astrons, ion rings, magnetized target fusion, and cusps
52.50.Dg Plasma sources
52.40.Hf Plasma-material interactions; boundary layer effects

Z‐pinch implosions onto extremely low‐density foam cylinders

R. B. Spielman, M. K. Matzen, M. A. Palmer, P. B. Rand, T. W. Hussey, and D. H. McDaniel

Appl. Phys. Lett. 47, 229 (1985); http://dx.doi.org/10.1063/1.96227 (3 pages) | Cited 18 times

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We have imploded xenon gas‐puff Z pinches onto small diameter, extremely low‐density foam cylinders ( ρ=0.0045 g/cm3). The presence of the foam on the cylindrical axis had little effect on the radiation production efficiency, pulse width, or spectral details, but it significantly improved the symmetry and uniformity of the stagnation. These experiments confirm that we can stagnate and thermalize a high velocity (5×107 cm/s) plasma onto a cold, low‐density target and suggest the feasibility of creating a homogeneous plasma for x‐ray laser studies.
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52.55.Ez Theta pinch
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Lp Plasma production and heating by shock waves and compression
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Effect of pressure on the solid phase epitaxial regrowth rate of Si

Eric Nygren, Michael J. Aziz, David Turnbull, John M. Poate, Dale C. Jacobson, and Robert Hull

Appl. Phys. Lett. 47, 232 (1985); http://dx.doi.org/10.1063/1.96228 (2 pages) | Cited 31 times

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The hydrostatic pressure dependence of the solid phase epitaxial growth rate of 〈100〉 Si into ion implanted amorphous Si at 500 °C has been monitored by Rutherford backscattering and channeling techniques. The growth rate increases with pressure so that at 20 kbar it is 14 times the ambient value. The increase is described by an activation volume for the process of −8.7 cm3/mole.
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68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Interdiffusion in Si/Ge amorphous multilayer films

S. M. Prokes and F. Spaepen

Appl. Phys. Lett. 47, 234 (1985); http://dx.doi.org/10.1063/1.96229 (3 pages) | Cited 57 times

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Multilayered or compositionally modulated amorphous Si/amorphous Ge films with a repeat length of 5.83 nm have been fabricated using ion beam sputtering. The interdiffusion coefficient Dλ was determined by measuring the intensity of the x‐ray satellite arising from the modulation as a function of annealing time. The interdiffusion was found to be relatively rapid, in that it could be measured easily without crystallization occurring. The temperature dependence in the range 550–630 K is described by Dλ=1.07 × 10−10 exp (−1.6 eV/kT) m2s−1.
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66.30.Ny Chemical interdiffusion; diffusion barriers
64.75.-g Phase equilibria
61.43.Fs Glasses
61.43.-j Disordered solids
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Silicide formation by thermal annealing of Ni and Pd on hydrogenated amorphous silicon films

L. S. Hung, E. F. Kennedy, C. J. Palmstrøm, J. O. Olowolafe, J. W. Mayer, and H. Rhodes

Appl. Phys. Lett. 47, 236 (1985); http://dx.doi.org/10.1063/1.96230 (3 pages) | Cited 19 times

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Silicide formation with the near‐noble metals Ni and Pd on hydrogenated amorphous silicon substrates was studied with Rutherford backscattering spectrometry and forward recoil spectrometry. Upon annealing, Ni2Si (or Pd2Si) grows with the square root of time, and the activation energy is identical to that of the corresponding metal on single‐crystal silicon substrates. The growth is slightly faster for hydrogenated amorphous silicon, which is attributed to the amorphous structure. During silicide formation, the hydrogen is released from silicides and presumably outdiffuses into a vacuum without interfacial accumulation. Thus, barrier formation does not occur, and the presence of hydrogen in the substrates has no effect on silicide growth.
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68.55.-a Thin film structure and morphology
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
66.30.J- Diffusion of impurities
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Development and use of a thin‐film transmission positron moderator

K. G. Lynn, B. Nielsen, and J. H. Quateman

Appl. Phys. Lett. 47, 239 (1985); http://dx.doi.org/10.1063/1.96231 (2 pages) | Cited 47 times

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A narrow energy beam of slow positrons can be generated by moderating the beta‐decay spectrum of a radioactive β+ source. We report here the development and use of the first moderator in which the low‐energy positrons are not extracted from the surface facing the β+ emitter but from the opposite surface, i.e., the transmission moderator. An advantage is that such a configuration eliminates the problem of moderated positrons passing by the radioactive source. This is an essential problem when the source is physically large such as the present commerically available Na22 sources. This moderator is a 5000‐Å self‐supporting W (100) film. The growth and treatment of the film were found to provide a high‐quality positron moderator. The slow to fast positron conversion efficiency, using a Na22 source, was found to be 4×10−4.
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29.25.Bx Electron sources
07.77.-n Atomic, molecular, and charged-particle sources and detectors
61.80.Fe Electron and positron radiation effects
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Hydrogen depth profiles in ion implanted magnetic bubble garnets

A. Leiberich and R. Wolfe

Appl. Phys. Lett. 47, 241 (1985); http://dx.doi.org/10.1063/1.96232 (3 pages) | Cited 3 times

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The hydrogen depth profiles of ion implanted magnetic bubble garnet films have been measured by elastic recoil analysis using 44 MeV chlorine ions. The garnets were triply implanted with Ne, N, and H and were then annealed with or without a surface coating of SiO2. At 250 °C, H was found to diffuse throughout the damaged surface layer but not into the underlying undamaged material. At 350 °C, H diffused out of the uncoated garnet, but was sealed into the implant damaged layer by the thin oxide coating. The deposition of the oxide layer at low temperature after implantation but before processing resulted in a constant H concentration profile extending throughout the implant damaged region of the bubble garnet. This retention of hydrogen correlates with previously reported improvements in propagation behavior of oxide coated ion implanted bubble devices.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.U- Doping and impurity implantation
85.70.Ge Ferrite and garnet devices
75.70.Kw Domain structure (including magnetic bubbles and vortices)

Effects of As impurities on the solidification velocity of Si during pulsed laser annealing

P. S. Peercy, Michael O. Thompson, and J. Y. Tsao

Appl. Phys. Lett. 47, 244 (1985); http://dx.doi.org/10.1063/1.96233 (3 pages) | Cited 24 times

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The effect of As dopants on the solidification velocity during pulsed laser annealing of Si was measured using the transient conductance technique. At high concentrations, As is found to decrease the solidification velocity; for 7 at. % As, the velocity decreases ∼20% as the interface approaches the peak of the As distribution, followed by a velocity increase when the interface exits the region of maximum As concentration. The measurements are interpreted in terms of a decrease in the melting temperature. The observation of surface nucleation to produce buried molten layers and internal nucleation of melt at higher As concentrations supports this interpretation.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Ds Laser-beam impact phenomena
64.70.D- Solid-liquid transitions
64.60.My Metastable phases
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