APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Sep 1985

Volume 47, Issue 5, pp. 439-540

Page 2 of 2 Pages Previous Page | Jump to Page

Energy band discontinuities in heterojunctions measured by internal photoemission

M. Heiblum, M. I. Nathan, and M. Eizenberg

Appl. Phys. Lett. 47, 503 (1985); http://dx.doi.org/10.1063/1.96107 (3 pages) | Cited 26 times

Full Text: | Download PDF

Show Abstract
A novel method involving internal photoemission has been developed to determine the conduction band discontinuity Δ Ec of heterojunctions. The method is straightforward, accurate, and assumes minimum unknowns; and has been applied to GaAs/AlxGa1−xAs heterojunctions. We have found for x<0.4 that Δ Ec≂0.62 Δ Eg, where Δ Eg is the band‐gap difference. For x>0.4, the apparent Δ Ec is considerably smaller.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.30.+y Surface double layers, Schottky barriers, and work functions
72.40.+w Photoconduction and photovoltaic effects
79.60.-i Photoemission and photoelectron spectra

New nondestructive method for the investigation of insulator‐semiconductor structures

G. Bouillier, C. Alquie, and G. Dreyfus

Appl. Phys. Lett. 47, 506 (1985); http://dx.doi.org/10.1063/1.96427 (2 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
The pressure wave propagation (PWP) method, originally designed to study the electrical properties of polymers, is used to determine the distribution of charges in metal‐insulator‐silicon and metal‐oxide‐silicon structures. This method is nondestructive and fast. The electric field distribution in a sample is derived from the signal induced by the propagation of a pressure wave with a short rise time in the structure. As a new application of this method, we demonstrate that it is possible to observe the evolution of the surface states of silicon during ambient oxidation and to reveal the charge distribution in a metal‐glass‐silicon structure.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.De Semiconductor-device characterization, design, and modeling
73.20.-r Electron states at surfaces and interfaces
81.65.-b Surface treatments

Structure variation of the index of refraction of GaAs‐AlAs superlattices and multiple quantum wells

K. B. Kahen and J. P. Leburton

Appl. Phys. Lett. 47, 508 (1985); http://dx.doi.org/10.1063/1.96108 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
We present for the first time a detailed calculation of the index of refraction of various GaAs‐AlAs superlattices. The calculation is performed by using a hybrid approach which combines the k⋅p method with the pseudopotential technique. Appropriate quantization conditions account for the influence of the superstructures on the electronic properties of the systems. The results of our model are in very good agreement with the experimental data. In comparison with the index of refraction of the corresponding AlGaAs alloy, characterized by the same average mole fraction math of Al, our results indicate that the superlattice index of refraction values attain maxima at the various quantized transition energies. For certain structures the difference can be as large as ∼2%. These results suggest that the waveguiding and dispersion relation properties of optoelectronic devices can be tailored to design for specific optical application by an appropriate choice of the superlattice structure parameters.
Show PACS
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.10.-w Theories and models of many-electron systems
85.60.Jb Light-emitting devices

Secondary implantation of Sb into Si molecular beam epitaxy layers

H. Jorke, H.‐J. Herzog, and H. Kibbel

Appl. Phys. Lett. 47, 511 (1985); http://dx.doi.org/10.1063/1.96109 (3 pages) | Cited 53 times

Full Text: | Download PDF

Show Abstract
We report on the influence of low‐energy Si+ ions on the incorporation of Sb adatoms existing on growing (100) Si molecular beam epitaxy layers. At a growth temperature of 650 °C employed for these experiments an increase of incorporation of about three orders of magnitude compared to the spontaneous incorporation is obtained at ion flux densities of typically 1012 cm−2 s−1. Dopant activation coefficients of almost unity are established up to 1019 cm−3. The number of incorporated adatoms is found to increase proportionally with preadjusted adatom density as well as with Si+ ion dose. At an ion energy of 500 eV the constant of proportionality is estimated to be σI =(5±2)×10−16 cm2.
Show PACS
61.72.U- Doping and impurity implantation
68.55.-a Thin film structure and morphology
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Raman scattering from phonon‐plasmon modes in Ga1−xAlxAs

R. J. Becker, P. F. Luehrmann, and D. W. Langer

Appl. Phys. Lett. 47, 513 (1985); http://dx.doi.org/10.1063/1.96110 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
The relation for the frequencies of phonon‐plasmon modes in two‐component solutions is presented. Raman spectra from over 80 samples of Ga1−xAlxAs over a wide range of x values and varying electron concentrations have been fitted to predicted curves using this relationship. Data were taken at both room and nitrogen temperature on samples grown by both metalorganic chemical vapor deposition and molecular beam epitaxy.
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.30.Hv Other nonmetallic inorganics

Raman spectroscopy of intrinsic defects in electron and neutron irradiated GaAs

R. S. Berg, P. Y. Yu, and E. R. Weber

Appl. Phys. Lett. 47, 515 (1985); http://dx.doi.org/10.1063/1.96111 (3 pages) | Cited 19 times

Full Text: | Download PDF

Show Abstract
We report Raman scattering measurements in GaAs that has been damaged by irradiation with either high‐energy electrons or neutrons. We observe new and relatively sharp peaks which are attributed to vibrational modes of intrinsic point defects, most likely an As vacancy.
Show PACS
61.80.-x Physical radiation effects, radiation damage
63.20.kp Phonon-defect interactions
78.30.Hv Other nonmetallic inorganics
61.72.jd Vacancies
61.72.jj Interstitials

Effect of oxygen on In0.53Ga0.47As films grown by molecular beam epitaxy

R. A. Stall, R. J. Wunder, V. Swaminathan, and H. M. Cox

Appl. Phys. Lett. 47, 518 (1985); http://dx.doi.org/10.1063/1.96112 (3 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
Incomplete removal of the native oxide from the surface of the InP substrate before growth leads to oxygen incorporation in subsequently grown molecular beam epitaxial In0.53Ga0.47As films. Secondary ion mass spectroscopy profiles indicate highest concentrations near the InP substrate and the InGaAs surface with lower levels in the middle of the epilayer on samples which show oxygen contamination. Electrically such films have low electron mobilities (μ300 K<3000 cm2/V s) and high net free‐carrier densities (1016 cm−3<n300 K<1017 cm−3) with substantial freezeout as the temperature is lowered from 300 to 77 K. Photoluminescence from layers with high oxygen incorporation shows low intensity but with no lines or bands that can be ascribed to oxygen at this time.
Show PACS
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology
81.65.-b Surface treatments

Quantitative measurements of the stoichiometry of anodic oxides grown on Hg0.78Cd0.22Te

C. M. Stahle, D. J. Thomson, C. R. Helms, C. H. Becker, and A. Simmons

Appl. Phys. Lett. 47, 521 (1985); http://dx.doi.org/10.1063/1.96113 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
The Hg concentration in anodic oxides grown on Hg0.78Cd0.22Te has been measured by Rutherford backscattering and surface analysis by laser ionization techniques. A significant Hg content is found, and this result is contrasted with previous compositional studies which have concluded that a very low Hg concentration exists in the anodic oxide grown on Hg1−xCdxTe. In addition, a model reaction is proposed which suggests that Hg and Te are dissolved in the anodizing solution to a much greater extent than Cd during the oxidation process.
Show PACS
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
61.50.Nw Crystal stoichiometry
81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena

Growth of thin single crystal NiSi2 films on Si surfaces, a field ion microscope study

H. F. Liu, H. M. Liu, and T. T. Tsong

Appl. Phys. Lett. 47, 524 (1985); http://dx.doi.org/10.1063/1.96114 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
Thin single crystal NiSi2 films have been grown epitaxially on the [111] oriented Si tip surface in ultrahigh vacuum (UHV). A 180° change in the axial symmetry is found for the field ion images taken before and after the growth of the silicide layers. From this observation and a computer simulation of the field ion images we conclude that the Si‐NiSi2 interface has the B‐type structure. The field ion image of the NiSi2 films is good enough to reveal the atomic structure of the (111) Ni layer.
Show PACS
68.55.-a Thin film structure and morphology
68.37.Vj Field emission and field-ion microscopy
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Metal‐oxide‐semiconductor field‐effect transistors fabricated using self‐aligned silicide technology

B‐Y. Tsaur and C. H. Anderson

Appl. Phys. Lett. 47, 527 (1985); http://dx.doi.org/10.1063/1.96115 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
N‐ and p‐channel metal‐oxide‐semiconductor field‐effect transistors have been fabricated with self‐aligned WSi2 source, WSi2 drain, and WSi2/polycrystalline‐silicon gate. Ion beam mixing and rapid thermal annealing techniques were employed to form smooth WSi2 films selectively on the device area and to simultaneously form shallow source and drain p‐n junctions. Good electrical characteristics were obtained for both n‐ and p‐channel devices, which have a gate length of 1.5 μm.
Show PACS
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
61.72.U- Doping and impurity implantation
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Amplification by a voltage locked array of Josephson junctions

D. G. McDonald and N. V. Frederick

Appl. Phys. Lett. 47, 530 (1985); http://dx.doi.org/10.1063/1.96116 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
We have studied a new type of Josephson junction amplifier which is based on a two‐junction array; the junctions are mutually phase locked at the Josephson self‐oscillation frequency. With this frequency at 82 GHz, the voltages of the junctions remain equal (locked) for a bias current range as large as 60% of the critical current. Over a much smaller bias range, with an applied signal frequency of 1 kHz, a small‐signal power gain of 19 dB was measured, accompanied by a negative resistance input impedance. This performance is consistent with a quasistatic theory of the amplifier.
Show PACS
85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
84.30.Le Amplifiers

Magnetic depth profiling and characterization of Fe‐oxide films by Kerr rotation and spin polarized photoemission

Eric Kay, R. A. Sigsbee, G. L. Bona, M. Taborelli, and H. C. Siegmann

Appl. Phys. Lett. 47, 533 (1985); http://dx.doi.org/10.1063/1.96117 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
The site occupancy and the valence valence state of Fe ions in a ferritelike sputtered thin film and its subsequent magnetic properties are well known to critically depend on sample preparation techniques. We show how measuring spin polarization of threshold photoelectrons having a nondestructive depth profiling capability of up to 100 Å can be used to gain detailed insight into site and valency information as a function of depth. In particular, we demonstrate that a reactively sputter deposited Fe‐oxide film nominally shown to have crystallography data consistent with bulk Fe3O4 is uniform throughout, but in fact has no divalent Fe++ contributing to its overall magnetic properties. Furthermore, post‐deposition oxidation of this film to nominally yield the γFe2O3 structure resulted in producing a nonmagnetic top layer followed by a Fe+++ containing magnetic layer very similar to the as‐deposited layer, but definitely not γFe2O3. Simple Kerr rotation measurements confirmed the presence of the nonmagnetic top layer to about 200 Å depth consistent with earlier measurements by neutron reflection. The evidence points to film structures with a high concentration of nonbulklike Fe site defects in the as‐sputtered and oxidized condition.
Show PACS
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
79.60.-i Photoemission and photoelectron spectra
78.20.Ls Magneto-optical effects
68.55.-a Thin film structure and morphology

Further evidence for free electrons as dominating the behavior of electrochromic polycrystalline WO3 films

R. B. Goldner, P. Norton, K. Wong, G. Foley, E. L. Goldner, G. Seward, and R. Chapman

Appl. Phys. Lett. 47, 536 (1985); http://dx.doi.org/10.1063/1.96118 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
The results of two types of experiments on electrochromic (poly)crystalline films of rf sputtered WO3 are presented as additional new evidence that the behavior (especially scattering) of the free electrons plays a dominant role in the electrochromic properties of such films.
Show PACS
78.20.Jq Electro-optical effects
75.20.Ck Nonmetals
42.79.-e Optical elements, devices, and systems
73.61.Ng Insulators

Laser chemical vapor deposition of gold

Thomas H. Baum and Carol R. Jones

Appl. Phys. Lett. 47, 538 (1985); http://dx.doi.org/10.1063/1.96119 (3 pages) | Cited 50 times

Full Text: | Download PDF

Show Abstract
High quality gold spots and lines have been deposited from gaseous dimethyl (2, 4‐pentanedionato) gold (III) using a focused argon ion laser. Growth rates of 1 μm/s at power densities of 4×105 W/cm2 were obtained. Resistivity, threshold writing power densities, and deposition rates were measured and their relationship to the physical and chemical properties of the gaseous complex are explored.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.At Metal and metallic alloys
68.55.-a Thin film structure and morphology
81.40.Rs Electrical and magnetic properties related to treatment conditions
Page 2 of 2 Pages Previous Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close