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15 Sep 1985

Volume 47, Issue 6, pp. 545-645

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Theory of the effect of traps on the spectral characteristics of diode lasers

H. J. Zeiger

Appl. Phys. Lett. 47, 545 (1985); http://dx.doi.org/10.1063/1.96120 (3 pages) | Cited 2 times

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The effect of traps on the spectral characteristics of diode lasers has been calculated by solving a set of coupled linearized equations of motion for fluctuating system variables under the influence of Langevin forces. The results have been used to compute the FM and AM noise spectra, current noise spectrum, and laser line shape. Trap effects are capable of explaining the 1/ f  contributions to the spectra, as well as the excess power‐independent linewidth observed in GaAs diode laser emission.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.50.-p Quantum optics

Five‐layer nonlinear waveguide for second harmonic generation

M. A. Duguay and J. S. Weiner

Appl. Phys. Lett. 47, 547 (1985); http://dx.doi.org/10.1063/1.96121 (3 pages) | Cited 3 times

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We propose a new two‐coupled‐waveguide structure for second harmonic generation. An input TEω0 mode is phase matched to a harmonic TM2ω1 mode by varying the separation between the guides. Calculation of conversion efficiency in an AlGaAs structure gives 12% for 10 mW of input power at 1.3 μ over a 2‐mm phase‐matched length.
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42.79.Gn Optical waveguides and couplers
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Acousto‐optic Bragg diffraction in a LiNbO3 channel‐planar composite waveguide with application to optical computing

C. S. Tsai, D. Y. Zang, and P. Le

Appl. Phys. Lett. 47, 549 (1985); http://dx.doi.org/10.1063/1.96122 (3 pages) | Cited 11 times

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Successful experimentation on acousto‐optic Bragg diffraction in a LiNbO3 composite waveguide that consists of an array of parallel but uncoupled channel waveguides directly extended to a single‐mode planar waveguide and a titanium‐indiffused proton‐exchanged (TIPE) microlens array is reported for the first time. A channel‐waveguide array, a planar waveguide, a linear TIPE microlens array, a 500‐MHz surface acoustic wave transducer, and an integrating lens have all been integrated in a substrate size of 0.2×1.0×2.0 cm to form an integrated acousto‐optic Bragg modulator that should find a variety of applications in optical computing, signal processing, and communications. The resulting modulator module has been utilized to perform matrix‐vector multiplication.
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42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Gn Optical waveguides and couplers
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Lasing transitions in GaAs/GaAs1−xPx strained‐layer superlattices with x=0.1–0.5

P. L. Gourley, J. P. Hohimer, and R. M. Biefeld

Appl. Phys. Lett. 47, 552 (1985); http://dx.doi.org/10.1063/1.96123 (3 pages) | Cited 9 times

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The role of strain in modifying lasing transition energy and gain coefficient in photopumped GaAs/GaAs1−xPx strained‐layer superlattices is investigated by examining photoluminescence, excitation, and lasing spectra for samples with x in the range 0.1–0.5. Over this range, the lasing transition energy increases 50 meV, independent of quantum size effects. The compressive biaxial strain present in the GaAs layers is expected to significantly increase the gain coefficient for the ‖3/2,±1/2〉 ‘‘light’’ hole transitions. However, polarization measurements of the lasing spectra show no evidence for lasing on the TM mode ‖3/2,±1/2〉 transitions and show lasing only on the TE mode ‖3/2,±3/2〉 ‘‘heavy’’ hole transitions.
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42.55.Px Semiconductor lasers; laser diodes
78.40.Fy Semiconductors
78.45.+h Stimulated emission
75.20.Ck Nonmetals

Spatial hole burning problems in evanescently coupled semiconductor laser arrays

Kuo‐Liang Chen and Shyh Wang

Appl. Phys. Lett. 47, 555 (1985); http://dx.doi.org/10.1063/1.96068 (3 pages) | Cited 17 times

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The effect of spatial hole burning on laser arrays is theoretically analyzed. Due to the nonuniformity of the lowest order supermode, carriers are unevenly depleted when this mode is excited. This spatial hole burning in carrier concentration reduces any designed discrimination against higher order supermodes. More and more modes are excited as the power level goes up, resulting in broadened radiation patterns. Even when the lowest order mode oscillation can be guaranteed, spatial hole burning modifies the refractive index profile. The intensity distribution of this mode narrows as power increases. The results are broadened radiation patterns and low quantum efficiency. Two methods to overcome these problems are briefly discussed.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

Mixing gasdynamic laser driven by decomposed gas of liquid N2O

Katsushi Kitagawa and Katsuhiko Komatsu

Appl. Phys. Lett. 47, 558 (1985); http://dx.doi.org/10.1063/1.96069 (3 pages)

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A high‐temperature decomposed gas of liquid nitrous oxide is employed as a donor gas in a downstream mixing gasdynamic laser. A small‐signal gain and a laser power have been measured as a function of H2O concentration at the CO2 (001)–(100) transition. The maximum gain and power were obtained at ∼0.1% H2O concentration which is almost an order of magnitude smaller than the values reported for the CO2+N2+H2O gasdynamic lasers.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
47.40.Ki Supersonic and hypersonic flows

Fundamental lateral mode oscillation via gain tailoring in broad area semiconductor lasers

Chris Lindsey, Pam Derry, and Amnon Yariv

Appl. Phys. Lett. 47, 560 (1985); http://dx.doi.org/10.1063/1.96070 (3 pages) | Cited 12 times

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We show that by employing gain tailoring in a broad area semiconductor laser we achieve fundamental lateral mode operation with a diffraction‐limited single‐lobed far‐field pattern. We demonstrate a tailored gain broad area laser 60 μm wide which emits 450 mW per mirror into a stable, single‐lobed far‐field pattern 3 1/2° wide at 5.3 Ith.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Fc Modulation, tuning, and mode locking

Spectral linewidth broadening due to self‐modulation of the refractive index of semiconductor lasers

H. Sato and T. Fujita

Appl. Phys. Lett. 47, 562 (1985); http://dx.doi.org/10.1063/1.96071 (3 pages) | Cited 1 time

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We propose a new mechanism for the spectral linewidth broadening of semiconductor lasers, which is self‐modulation of the refractive index of the semiconductor cavity caused by interference between the lasing modes. It is shown that the broadening of the main‐mode linewidth due to submodes is explained reasonably well by the self‐modulation term. A new interpretation of the power‐independent linewidth problem is also suggested.
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42.55.Px Semiconductor lasers; laser diodes
42.50.-p Quantum optics
42.25.Kb Coherence
42.55.Ah General laser theory

Low loss 4He+ implanted LiNbO3 waveguide produced by transient annealing

S. A. M. Al‐Chalabi

Appl. Phys. Lett. 47, 564 (1985); http://dx.doi.org/10.1063/1.96072 (3 pages) | Cited 6 times

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The fabrication of planar optical waveguides in LiNbO3 using 4He+ implantation requires the samples to be annealed in an oxygen flow after implantation to remove the damage from the guiding layer and to replace oxygen loss during implantation. This letter describes, for the first time, the use of transient thermal annealing to process LiNbO3, and the results show that with this short time anneal, the quality of these waveguides has improved significantly giving an attenuation of 0.2 dB/cm at 0.633 μm.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Infrared photorefractive passive phase conjugation with BaTiO3: Demonstrations with GaAlAs and 1.09‐μm Ar+ lasers

Mark Cronin‐Golomb, Kam Y. Lau, and Amnon Yariv

Appl. Phys. Lett. 47, 567 (1985); http://dx.doi.org/10.1063/1.96073 (3 pages) | Cited 21 times

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We report photorefractive passive phase conjugation of GaAlAs laser radiation at 815–865 nm and Ar+ laser radiation at 1090 nm. A ring passive phase conjugate mirror was used with BaTiO3 as the real‐time holographic gain medium. With GaAlAs lasers phase conjugate reflectivities of up to 16% uncorrected for Fresnel losses were recorded. Effects of the strong associated feedback to the laser and attempts at mode locking are described. At 1090 nm the reflectivity remains approximately the same, but with a significantly longer time constant.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes
42.40.-i Holography

Low threshold current AlGaAs/GaAs distributed feedback laser grown by two‐step molecular beam epitaxy

Keisuke Kojima, Susumu Noda, Kazumasa Mitsunaga, Kazuo Kyuma, and Takashi Nakayama

Appl. Phys. Lett. 47, 570 (1985); http://dx.doi.org/10.1063/1.96074 (3 pages) | Cited 4 times

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AlGaAs/GaAs distributed feedback lasers with oxide‐stripe structure were fabricated by two‐step molecular beam epitaxy (MBE) growth for the first time. The large coupling coefficient of 90 cm−1 was obtained by controlling precisely the thickness of each layer. As a result, the threshold current of 165 mA, which is the lowest ever reported, was obtained at room temperature. The characteristic temperature T0 was as high as 210 K. Single longitudinal mode oscillation over the temperature range of 50 K was observed without mode hopping. Due to the uniformity of the thickness and composition of the layers grown by MBE, uniform oscillation wavelengths were observed.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Lamb wave reflection at plate edges

P. Diodati, G. Tassi, and A. Alippi

Appl. Phys. Lett. 47, 573 (1985); http://dx.doi.org/10.1063/1.96075 (3 pages) | Cited 2 times

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The changing of modes taking place in Lamb wave reflected from the limiting edge of a plate is taken into consideration by evaluating the coupling of the single shear and longitudinal components, through Snell’s law. Acousto‐optical probing of the acoustic field is used for studying the effect in isotropic plates, in the range of a few megahertz.
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43.20.Fn Scattering of acoustic waves
43.20.Mv Waveguides, wave propagation in tubes and ducts
43.40.Dx Vibrations of membranes and plates
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography

Photoenhanced electron attachment of vinylchloride and trifluoroethylene at 193 nm

M. J. Rossi, H. Helm, and D. C. Lorents

Appl. Phys. Lett. 47, 576 (1985); http://dx.doi.org/10.1063/1.96076 (3 pages) | Cited 19 times

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We show that the electron attachment properties of a gas mixture of helium containing vinylchloride or trifluoroethylene can be altered from nonattaching to strongly attaching by irradiation with a low‐energy laser pulse at 193 nm. These molecules are photodissociated producing vibrationally excited HCl or HF and other fragments that strongly attach low‐energy electrons.
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82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)

Anodic oxidation of tantalum silicide

J. M. Martínez‐Duart, M. Fernández, E. Paule, A. Climent, J. M. Albella, J. Perriere, and J. Siejka

Appl. Phys. Lett. 47, 579 (1985); http://dx.doi.org/10.1063/1.96077 (3 pages) | Cited 1 time

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Oxide films on cosputtered tantalum silicide have been formed by anodic oxidation. The films were characterized by Rutherford backscattering and nuclear microanalysis measurements yielding a composition consisting in a mixture of Ta2O5 and SiO2. The films show good quality insulating properties as determined by capacitance, electrical conductivity, and dielectric strength measurements. The results of this work are compared with those obtained by the thermal oxidation of tantalum silicide.
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81.05.Bx Metals, semimetals, and alloys
68.60.-p Physical properties of thin films, nonelectronic
73.61.Ng Insulators
77.55.-g Dielectric thin films

Surface sensitive Mössbauer spectroscopy by the combination of total external reflection and conversion electron detection

J. C. Frost, B. C. C. Cowie, S. N. Chapman, and J. F. Marshall

Appl. Phys. Lett. 47, 581 (1985); http://dx.doi.org/10.1063/1.96078 (3 pages) | Cited 12 times

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The combination of a grazing incidence total external reflection geometry with conversion electron detection is shown to produce surface sensitive Mössbauer spectra, which are selective for the first few nanometers of the solid. This approach is a practical and simply implemented method of obtaining the Mössbauer spectra of surfaces.
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76.80.+y Mössbauer effect; other γ-ray spectroscopy
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology
07.85.-m X- and γ-ray instruments

Ion implant monitoring with thermal wave technology

W. Lee Smith, Allan Rosencwaig, and David L. Willenborg

Appl. Phys. Lett. 47, 584 (1985); http://dx.doi.org/10.1063/1.96079 (3 pages) | Cited 65 times

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A new method, based on thermal wave technology, is used to monitor the ion implantation process in silicon. It is a noncontact, nondestructive technique that requires no special sample preparation or processing, has high sensitivity even at low dose, and provides a one‐micron spatial resolution capability. This method allows, for the first time, the ability to monitor the critical ion implantation process directly on the patterned product integrated circuit wafers as well as on the usual test wafers.
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61.72.U- Doping and impurity implantation
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
82.80.Dx Analytical methods involving electronic spectroscopy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Two‐material junction as a thermoelastic source of surface acoustic waves

N. S. Tankovsky, D. V. Ivanov, and J. I. Burov

Appl. Phys. Lett. 47, 586 (1985); http://dx.doi.org/10.1063/1.96080 (3 pages) | Cited 1 time

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In the present work the junction of two thermoelastically different materials stuck together has been used as a thermoelastic transducer of surface acoustic waves. A simplified theoretical analysis gives a criterion of convenience for the pair of materials to be used. The experiments carried out proved the efficiency of such a source of surface acoustic waves.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.38.Rh Surface acoustic wave transducers
43.35.Pt Surface waves in solids and liquids
43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect

Light‐induced defects in hydrogenated amorphous silicon observed by picosecond photoinduced absorption

J. Strait and J. Tauc

Appl. Phys. Lett. 47, 589 (1985); http://dx.doi.org/10.1063/1.96081 (3 pages) | Cited 10 times

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Phosphorus‐doped and boron‐doped hydrogenated amorphous silicon were studied by photoinduced absorption (PA) in the time range from 2 to 1800 ps. Prolonged light exposure (ℏω=2.0 eV) causes PA to decay more rapidly. The data are fit to a multiple trapping model. Minority carriers get trapped at deep defect states whose density increases with light exposure. These results are consistent with the interpretation that the light‐induced defects in amorphous silicon are dangling bonds.
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78.40.Fy Semiconductors
78.30.-j Infrared and Raman spectra
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ng Disordered solids

Measurement of optical absorption in single quantum wells using photothermal deflection spectroscopy

A. F. S. Penna, Jagdeep Shah, A. E. DiGiovanni, A. Y. Cho, and A. C. Gossard

Appl. Phys. Lett. 47, 591 (1985); http://dx.doi.org/10.1063/1.96426 (3 pages) | Cited 10 times

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We report the measurement of the optical absorption spectra of single quantum wells of GaAs (104 Å thick) and InGaAs (75 Å thick) by photothermal deflection spectroscopy. The room‐temperature spectra show distinct structure due to heavy‐ and light‐hole excitons in both GaAs and InGaAs samples. The measurements also show that absorption spectra in extremely thin (<10 Å) quantum wells, single heterostructures, or other microstructures with very small absorptance can be obtained by this technique.
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75.20.Ck Nonmetals
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
71.35.-y Excitons and related phenomena
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Role of thin multiquantum wells in controlling intrinsic interface quality in molecular beam epitaxially grown heterostructures

Jasprit Singh and K. K. Bajaj

Appl. Phys. Lett. 47, 594 (1985); http://dx.doi.org/10.1063/1.96082 (3 pages) | Cited 6 times

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A model based on Monte Carlo simulations and theory of statistical fluctuations is presented for molecular beam epitaxy growth of III‐V semiconductors. It is shown that under normally employed growth conditions, cation surface migration controls the surface (interface) quality. The surface of a growing film gets rougher with increasing thickness of the film due to statistical fluctuations in the cation flux and limited cation migration. An important outcome of this theory is that the substrate temperature for high quality semiconductor surfaces and interfaces can be substantially reduced if growth is punctuated by thin layers (5–10 monolayers) of a low melting temperature semiconductor. Potential use of thin layers of InAs and GaAs for low‐temperature growth of GaAs and AlGaAs, respectively, is discussed.
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68.55.-a Thin film structure and morphology
68.60.-p Physical properties of thin films, nonelectronic

New high‐speed long‐wavelength Al0.48In0.52As/Ga0.47In0.53As multiquantum well avalanche photodiodes

K. Mohammed, F. Capasso, J. Allam, A. Y. Cho, and A. L. Hutchinson

Appl. Phys. Lett. 47, 597 (1985); http://dx.doi.org/10.1063/1.96083 (3 pages) | Cited 19 times

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We report the operation of a new long‐wavelength (λ=1.3 μm) superlattice avalanche photodiode. The p+in+ structure, grown by molecular beam epitaxy, consists of a 35 period Al0.48In0.52As (139 Å)/Ga0.47In0.53As (139 Å) multiquantum well i region sandwiched between p+ and n+‐Al0.48In0.52As transparent layers. dc and high‐frequency multiplications of 32 and 12, respectively, have been measured; the dark current at unity gain is 70 nA. High speed of response with full width at half‐maximum of 220 ps at a gain of 12 and the absence of tails are demonstrated, indicating that carrier trapping in the wells is negligible. In addition, detailed studies of the spectral response for samples with thin layers (103 Å) show extremely clearly the effect of the quantum states of the wells on the photocurrent at room temperature.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.De Semiconductor-device characterization, design, and modeling

Low defect density CdTe(111)‐GaAs(001) heterostructures by molecular beam epitaxy

J. M. Ballingall, W. J. Takei, and Bernard J. Feldman

Appl. Phys. Lett. 47, 599 (1985); http://dx.doi.org/10.1063/1.96084 (3 pages) | Cited 26 times

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(111) oriented CdTe has been grown on (001) oriented GaAs substrates by molecular beam epitaxy. Double crystal x‐ray diffraction rocking curve and photoluminescence measurements indicate that the CdTe is of exceptional quality despite the large lattice mismatch of 14.6%.
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68.55.-a Thin film structure and morphology
68.60.-p Physical properties of thin films, nonelectronic
78.40.Fy Semiconductors
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

GaAs field‐effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocations

P. Dobrilla, J. S. Blakemore, A. J. McCamant, K. R. Gleason, and R. Y. Koyama

Appl. Phys. Lett. 47, 602 (1985); http://dx.doi.org/10.1063/1.96085 (3 pages) | Cited 35 times

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Results are presented of electrical parameter mapping for arrays of field‐effect transistors (FET’s) fabricated in semi‐insulating GaAs wafers, compared with mapping data of the dislocation density and the neutral concentration of the main midgap donor defect (known as EL2) in the same wafers. The work seeks to clarify whether a ‘‘shift’’ of FET parameters such as threshold voltage Vth results directly from dislocation proximity, or whether such a shift results from FET sensitivity to the local EL2 concentration. For a wafer having quite different spatial distributions of EL2 and dislocations, the FET parameters were found to correlate strongly with the local neutral EL2 density, a high density promoting a larger channel current and a more negative Vth. Such results suggest that a reported sensitivity of Vth to dislocation proximity may arise from the role a dislocation can play as a source or sink for point defects.
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85.30.Tv Field effect devices
78.40.Fy Semiconductors
72.80.Ey III-V and II-VI semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Formation of a silicon‐carbide layer during CF4/H2 dry etching of Si

George J. Coyle and Gottlieb S. Oehrlein

Appl. Phys. Lett. 47, 604 (1985); http://dx.doi.org/10.1063/1.96086 (3 pages) | Cited 26 times

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Silicon specimens which had been reactive ion etched in CF4/x% H2 (0≤x≤40) have been characterized by x‐ray photoelectron emission spectroscopy. Angular rotation was used to study films deposited by the plasma process onto the Si surface. In agreement with previous studies it is found that plasma exposure of Si specimens leads to the deposition of a fluorocarbon film. An intriguing new finding was the discovery of a silicon‐carbide layer localized near the fluorocarbon‐film/Si interface. The existence of this carbide layer was found to be independent of gas composition from 0–40% H2 for a 1‐min plasma exposure.
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81.65.-b Surface treatments
61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.60.-p Physical properties of thin films, nonelectronic

Identification of a vanadium‐related level in liquid encapsulated Czochralski‐grown GaAs

C. D. Brandt, A. M. Hennel, L. M. Pawlowicz, F. P. Dabkowski, J. Lagowski, and H. C. Gatos

Appl. Phys. Lett. 47, 607 (1985); http://dx.doi.org/10.1063/1.96087 (3 pages) | Cited 28 times

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We present the first positive identification of a vanadium‐related electron trap in V‐doped GaAs crystals grown by the liquid encapsulated Czochralski technique in pyrolytic boron nitride crucibles. Detailed deep level transient spectroscopy and capacitance transient analysis yielded a trap energy of 0.15±0.01 eV below the conduction band and an electron capture cross section of about 2×10−14 cm2. Optical absorption and mobility data show that this level corresponds to the ionized acceptor state V2+(3d3) of substitutional vanadium. No midgap levels other than EL2 could be detected in these V‐doped crystals showing that doping with vanadium plays no direct role in the compensation process in semi‐insulating GaAs crystals.
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78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors
61.72.U- Doping and impurity implantation
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