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1 Oct 1985

Volume 47, Issue 7, pp. 649-764

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Operation principle of the InGaAsP/InP laser transistor

Yoshihiro Mori, Jun Shibata, Yoichi Sasai, Hiroyuki Serizawa, and Takao Kajiwara

Appl. Phys. Lett. 47, 649 (1985); http://dx.doi.org/10.1063/1.96045 (3 pages) | Cited 11 times

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A laser transistor functions both as a semiconductor laser and a heterojunction bipolar transistor. It generates stimulated emission light from the base region. We have obtained, typically, a maximum laser power of 3 mW, a current gain of 2000, and a transition frequency of 2.5 GHz for the fabricated devices. We show that the novel light output control can be obtained by changing its collector voltage. Both laser output and collector current can also be simultaneously controlled by changing the base current.
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42.55.Px Semiconductor lasers; laser diodes
85.30.Pq Bipolar transistors
85.60.Jb Light-emitting devices
42.82.-m Integrated optics

Noncollinear coplanar magneto‐optic interaction of guided optical wave and magnetostatic surface waves in yttrium iron garnet‐gadolinium gallium garnet waveguides

C. S. Tsai, D. Young, W. Chen, L. Adkins, C. C. Lee, and H. Glass

Appl. Phys. Lett. 47, 651 (1985); http://dx.doi.org/10.1063/1.96046 (4 pages) | Cited 26 times

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Wideband noncollinear coplanar guided‐wave magneto‐optic diffraction and mode conversion by magnetostatic surface waves at multigigahertz (3–7 GHz) carrier frequencies in yttrium iron garnet‐gadolinium gallium garnet waveguides have been observed and measured in detail for the first time. Interaction configuration, physical mechanisms, summary of a theoretical treatment, and some experimental results obtained at 1.152 μm optical wavelength are presented. This noncollinear coplanar magneto‐optic interaction configuration should result in a number of integrated optic devices for wideband communications and signal processing applications at electronically tunable microwave carrier frequencies. The potential advantages of the resulting magneto‐optic devices over the existing acousto‐optic devices are also discussed.
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85.70.Ge Ferrite and garnet devices
78.20.Ls Magneto-optical effects
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

A high‐power channeled‐substrate‐planar AlGaAs laser

B. Goldstein, M. Ettenberg, N. A. Dinkel, and J. K. Butler

Appl. Phys. Lett. 47, 655 (1985); http://dx.doi.org/10.1063/1.96047 (3 pages) | Cited 5 times

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A channeled‐substrate‐planar AlGaAs laser has been operated to 190 mW cw, and 170 mW cw in single fundamental spatial mode. A single fundamental spectral mode is observed up to about 70 mW. Beyond 70 mW there are minor increases in spectral sideband power and the far‐field pattern broadened asymmetrically with increased drive. Both these effects are attributed to spatial ‘‘hole burning.’’
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Efficient narrow spectral output in the blue‐green region from an injection‐controlled electron‐beam excited XeF (C→A) laser

G. Marowsky, N. Nishida, H. Stiegler, F. K. Tittel, W. L. Wilson, Y. Zhu, and William L. Nighan

Appl. Phys. Lett. 47, 657 (1985); http://dx.doi.org/10.1063/1.96048 (4 pages)

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Efficient, narrow spectral output has been achieved by injection control of an electron‐beam excited XeF (C→A) laser medium using a 482‐nm dye laser pulse having a spectral width of 0.01 nm. The energy density and intrinsic efficiency characteristic of the amplified output beam were 3 J/l and approximately 2.5%, respectively, and the spectral width was on the order of that of the injected pulse.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Energy partitioning between the equilibrated A and X states of the CN radical formed in the C+N2O reaction

L. Torchin, M. C. Bordas, and J. C. Robert

Appl. Phys. Lett. 47, 660 (1985); http://dx.doi.org/10.1063/1.96049 (3 pages)

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Similar populations have been observed between the A and X states of the CN radical, formed in the C+N2O chemical reaction. Relative vibrational populations were measured by laser‐induced fluorescence (X state) and chemiluminescence (A state). The electronic branching ratio was then obtained by assuming a Boltzmann equilibrium between the v″=4–6 and v′=1–4 levels of the X and A states. This assumption was checked by absolute calibration of the number densities of both states. About 1/3 of the radicals were found in the A state.
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82.20.Hf Product distribution
78.60.Ps Chemiluminescence
82.30.Cf Atom and radical reactions; chain reactions; molecule-molecule reactions
42.55.Ks Chemical lasers

Measurement of picosecond semiconductor laser pulse duration with internally generated second harmonic emission

Y. C. Chen and J. M. Liu

Appl. Phys. Lett. 47, 662 (1985); http://dx.doi.org/10.1063/1.96050 (3 pages) | Cited 2 times

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We demonstrate a simple practical technique for the measurement of the duration of picosecond semiconductor laser pulses using the internally generated second harmonic emission accompanying the laser output. The pulse duration is determined by the ratio of the conversion efficiencies of the second harmonic emission generated by the picosecond pulses and by the cw emission or other pulsed emission whose duration can be accurately measured. The pulse duration thus measured is in close agreement with that determined by the nonlinear intensity autocorrelation technique.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Highly anisotropic optical properties of single quantum well waveguides

J. S. Weiner, D. S. Chemla, D. A. B. Miller, H. A. Haus, A. C. Gossard, W. Wiegmann, and C. A. Burrus

Appl. Phys. Lett. 47, 664 (1985); http://dx.doi.org/10.1063/1.96051 (4 pages) | Cited 81 times

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The first measurements of the linear and nonlinear anisotropic absorption of light propagating along the plane of a single quantum well are reported and discussed in terms of the structure of the valence band in ultrathin semiconductor layers. Nonlinear optical effects are compared to those of multiple layer structures and to recent theory.
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75.20.Ck Nonmetals
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
71.35.-y Excitons and related phenomena
42.79.Gn Optical waveguides and couplers

Mode characteristics of grating‐incorporated channeled‐substrate‐planar GaAlAs lasers

I. Suemune, H. Fujii, and M. Yamanishi

Appl. Phys. Lett. 47, 667 (1985); http://dx.doi.org/10.1063/1.96052 (3 pages)

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A grating‐incorporated channeled‐substrate‐planar (CSP) laser is proposed for the 0° phase‐shift mode selection. The 180° phase‐shift mode is suppressed by combining fine gratings with the loss outside the electrode region. Single longitudinal mode oscillations of well‐defined index‐guided 0° modes are demonstrated for the wide channel CSP lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Copper conductors by reduction of copper (I) complex in a host polymer

A. Auerbach

Appl. Phys. Lett. 47, 669 (1985); http://dx.doi.org/10.1063/1.96053 (3 pages) | Cited 7 times

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A technique for generating fine copper conductors using a laser is described. The laser radiation is focused onto a Cu(CH3CN)4BF4‐doped poly (N‐vinylpyrrolidone) polymer thin film, and scanned across the polymer surface to produce a highly conductive copper run. The measured resistance is ony a factor of 5 above the calculated value for a copper conductor of comparable dimensions.
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81.05.Bx Metals, semimetals, and alloys
82.35.-x Polymers: properties; reactions; polymerization
82.50.-m Photochemistry
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Efficient generation of surface acoustic waves by thermoelasticity

W. Arnold, B. Betz, and B. Hoffmann

Appl. Phys. Lett. 47, 672 (1985); http://dx.doi.org/10.1063/1.96054 (3 pages) | Cited 13 times

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Short laser pulses were used for generating surface acoustic waves (SAW’s) on optically opaque solids via the thermoelastic effect. The spatial and temporal shapes of the laser pulses were either a spot or a line of variable total width δ=2a with a Gaussian power distribution. Maximal efficiency is obtained when a=vRτ(vR@B: Rayleigh velocity, 2τ: total laser‐pulse length). This condition is caused by interference effects between the individual frequency components radiating from the area of the thermoelastic source. If the intensity of the laser beam were 100% modulated at a given frequency, maximal efficiency would occur if kR=(2)1/2/a (kR@B: wave vector of the SAW’s).
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43.35.Pt Surface waves in solids and liquids
65.40.De Thermal expansion; thermomechanical effects
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
79.20.Ds Laser-beam impact phenomena

Wavelength independent, optical damage immune Z‐propagation LiNbO3 waveguide polarization converter

Suwat Thaniyavarn

Appl. Phys. Lett. 47, 674 (1985); http://dx.doi.org/10.1063/1.96425 (4 pages) | Cited 17 times

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A waveguide electro‐optic TE‐TM mode converter is demonstrated. The polarization conversion is independent of the operating wavelength and is compatible with a nontunable laser source. A high extinction ratio of more than 25 dB is reported. The device is fabricated on an X‐cut, Z‐propagation, Ti‐indiffused LiNbO3 waveguide and is immune to the optical damage problem which normally limits the optical power handling capability of LiNbO3 devices.
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42.79.Gn Optical waveguides and couplers
78.20.Jq Electro-optical effects
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Hp Optical processors, correlators, and modulators

Enhancement of a laser‐driven shock wave up to 10 TPa by the impedance‐match technique

F. Cottet, M. Hallouin, J. P. Romain, R. Fabbro, B. Faral, and H. Pepin

Appl. Phys. Lett. 47, 678 (1985); http://dx.doi.org/10.1063/1.96055 (3 pages) | Cited 22 times

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We have used the impedance‐match technique to increase the shock pressure induced in an aluminum‐gold target by a laser of 0.26 μm wavelength and intensity of 1015 W/cm2. With incident pressures of 4.5 TPa in aluminum, transmitted pressures of 10+4−3.5 TPa in gold are inferred from shock velocity measurements. Experiments on gold‐aluminum targets, with the same irradiation conditions, verify the shock pressure decrease due to the reverse impedance‐match effect.
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62.50.-p High-pressure effects in solids and liquids
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
07.35.+k High-pressure apparatus; shock tubes; diamond anvil cells

Corona‐plasma cathode for high‐energy electron beams

H. Shields, R. L. Sandstrom, and J. I. Levatter

Appl. Phys. Lett. 47, 680 (1985); http://dx.doi.org/10.1063/1.96056 (3 pages) | Cited 3 times

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A new type of cold cathode for high‐energy electron beam generators is described. A surface discharge, occurring at a metal‐dielectric‐vacuum ‘‘triple point,’’ acts as a plasma electron source. For a cathode area of 10 cm×10 cm, a maximum current density of 24 A cm−2 in a 1.3‐μs pulse has been demonstrated at 400 kV applied voltage.
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41.75.Fr Electron and positron beams
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
42.55.Lt Gas lasers including excimer and metal-vapor lasers
07.77.-n Atomic, molecular, and charged-particle sources and detectors

Sliding life enhancement of a WS2 sputtered film by ion beam mixing

Motohisa Hirano and Shojiro Miyake

Appl. Phys. Lett. 47, 683 (1985); http://dx.doi.org/10.1063/1.96057 (3 pages) | Cited 20 times

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The ion beam mixing effect on the tribological properties of the WS2 sputtered film is investigated. The film morphology and crystal structure related to the tribological properties are also examined. It is determined that a film so prepared has both lower friction and longer sliding life than an as‐sputtered WS2 film. Scanning electron micrograph and reflection high‐energy electron diffraction examinations suggest that the ion beam mixing effect can be attributed to crystalline precipitate formation resulting from recrystallization caused by the implantation.
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81.40.Pq Friction, lubrication, and wear
62.20.Qp Friction, tribology, and hardness
68.55.-a Thin film structure and morphology
61.80.Jh Ion radiation effects

Lattice and atomic structure imaging of semiconductors by high resolution transmission electron microscopy

A. Ourmazd, K. Ahlborn, K. Ibeh, and T. Honda

Appl. Phys. Lett. 47, 685 (1985); http://dx.doi.org/10.1063/1.96058 (4 pages) | Cited 13 times

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We show that the new generation of high resolution transmission electron microscopes allows the lattice imaging of semiconductors in at least four crystallographic orientations and present the first atomic structure images of Si, both in the 〈100〉 and 〈111〉 orientations. We demonstrate the ability to lattice image along different orientations such as 〈111〉 and 〈112〉 by tilting between them. Thus, the potential exists to obtain three‐dimensional maps of atom positions around individual features of interest such as defects and interfaces.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.66.Bi Elemental solids
61.72.-y Defects and impurities in crystals; microstructure
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Refractory metal silicide formation by ion beam mixing and rapid thermal annealing

D. L. Kwong, D. C. Meyers, N. S. Alvi, L. W. Li, and E. Norbeck

Appl. Phys. Lett. 47, 688 (1985); http://dx.doi.org/10.1063/1.96059 (4 pages) | Cited 15 times

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We have shown that uniform, stoichiometric, low‐resistivity refractory metal silicides (MoSi2 and WSi2) can be formed by implanting As ions through respective metal films (Mo and W) deposited on Si and rapid thermal annealing. Rapid diffusion of the implanted As ions is observed during the formation of the metal silicides.
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68.55.-a Thin film structure and morphology
66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

High resolution transmission electron microscopy of proton‐implanted gallium arsenide

D. K. Sadana, J. M. Zavada, H. A. Jenkinson, and T. Sands

Appl. Phys. Lett. 47, 691 (1985); http://dx.doi.org/10.1063/1.96060 (3 pages) | Cited 18 times

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High resolution transmission electron microscopy has been performed on cross‐sectional specimens from high dose (1016 cm−2) H+‐implanted (100) n‐GaAs (300 keV at room temperature). It was found that annealing at 500 °C created small (20–50 Å) loops on {111} planes near the projected range Rp (3.2 μm). At 550–600 °C, voids surrounded by stacking faults, microtwins, and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.
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61.80.Jh Ion radiation effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.72.-y Defects and impurities in crystals; microstructure

Strengthened solid‐state laser materials

J. Marion

Appl. Phys. Lett. 47, 694 (1985); http://dx.doi.org/10.1063/1.96061 (3 pages) | Cited 26 times

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The tensile fracture strength of crystalline materials for high average power lasers has been increased by a factor of 15 using deep chemical polishing. Samples of gadolinium scandium gallium garnet, gadolinium gallium garnet, and yttrium aluminum garnet, which were prepared by conventional mechanical techniques to a high quality polish, were found to contain subsurface damage up to 50 μm in depth. When this damage was removed by deep chemical etching, the mean strength of small, four‐point flexure specimens increased from 155 to 2280 MPa; however, these samples were no longer optically flat after etching. Specimens in which the optical figure was restored by polishing after the etch had an intermediate strength of 630 MPa.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.65.-b Surface treatments
62.20.M- Structural failure of materials
46.50.+a Fracture mechanics, fatigue and cracks

Seeding lateral epitaxy of silicon on insulator with improved seed and cap structure by pseudoline shaped electron beam annealing

K. Suguro, T. Inoue, T. Hamasaki, T. Yoshii, M. Yoshimi, M. Takahashi, K. Taniguchi, M. Kashiwagi, and H. Tango

Appl. Phys. Lett. 47, 696 (1985); http://dx.doi.org/10.1063/1.96062 (4 pages) | Cited 7 times

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Seeding lateral epitaxy for silicon films on an insulator, using pseudoline shaped electron beam annealing, has been investigated. Higher oscillation frequency, higher beam scanning velocity, and suitable oscillation amplitude were effective to achieve large uniform silicon on insulator (SOI) films with the aid of simulating temperature distribution in silicon substrate. Furthermore, improved seed with tapered edge and capping layer of tungsten/insulator were employed to obtain 300 μm×1.3 mm single‐crystal SOI films on a 1.3‐μm SiO2 layer. Stacked SOI devices were successfully fabricated with low‐temperature planarization process. 218 ps/stage propagation delay and 17 pJ power‐delay product were obtained.
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68.55.-a Thin film structure and morphology
85.40.Bh Computer-aided design of microcircuits; layout and modeling
81.10.Fq Growth from melts; zone melting and refining
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Novel method of producing ultrasmall platinum silicide gate electrodes

P. H. Woerlee, G. A. M. Hurkx, W. J. M. J. Josquin, and J. F. C. M. Verhoeven

Appl. Phys. Lett. 47, 700 (1985); http://dx.doi.org/10.1063/1.96063 (3 pages) | Cited 1 time

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A novel method has been developed for producing platinum silicide gate electrodes with submicron width. A lateral chemical reaction of platinum with polycrystalline silicon at a step edge was used. The width of the wire is determined by the thickness of a sputtered metal layer. Wires with width between 35 and 300 nm have been produced. The method has been used for making long‐channel field‐effect transistors with good device properties. Some preliminary results of the study of the low‐temperature electrical transport properties of inversion layers with width of 0.12 μm are reported.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Deep electron traps in undoped, molecular beam epitaxially grown ZnSe

Kiyoshi Yoneda, Yuji Hishida, and Hiroaki Ishii

Appl. Phys. Lett. 47, 702 (1985); http://dx.doi.org/10.1063/1.96064 (3 pages) | Cited 9 times

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Deep electron traps in normally undoped, low resistivity, molecular beam epitaxially grown ZnSe layers have been investigated by deep level transient spectroscopy. Two dominant deep electron traps with activation energies of 0.34 and 0.54 eV were observed. The former trap, whose trap concentration is independent of the carrier concentration in the grown layers, is attributed to a native defect arising from Se vacancy, while the latter, whose trap concentration increases with an increase in carrier concentration, is ascribed to the complex center associated with donor impurities incorporated during growth by evaporation of a Se source material.
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78.40.Fy Semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Determination of low levels of carbon in Czochralski silicon

A. S. Oates, R. C. Newman, R. Woolley, G. Davies, E. C. Lightowlers, M. J. Binns, and J. G. Wilkes

Appl. Phys. Lett. 47, 705 (1985); http://dx.doi.org/10.1063/1.96065 (3 pages) | Cited 11 times

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The C(3) vibrational lines at 865 and 1115 cm−1 are shown to correlate in intensity with the 790‐meV vibronic band in irradiated Czochralski silicon. The C(3)/790 meV lines may be used as a sensitive measure of the concentration of carbon in silicon.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
61.80.Fe Electron and positron radiation effects
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Passivation of recombination centers in n‐WSe2 yields high efficiency (>14%) photoelectrochemical cell

R. Tenne and A. Wold

Appl. Phys. Lett. 47, 707 (1985); http://dx.doi.org/10.1063/1.96066 (3 pages) | Cited 54 times

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It is shown that careful photoetching of n‐WSe2 leads to a large improvement in its photoresponse. Conversion efficiencies in excess of 14% were obtained in polyiodide solution under simulated solar light. A significant red shift in the photocurrent spectrum is observed after photoetching as well as hexagonal etch pits which reduce the reflectivity of the surface.
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82.47.-a Applied electrochemistry
72.40.+w Photoconduction and photovoltaic effects
81.65.-b Surface treatments
73.40.Mr Semiconductor-electrolyte contacts

Si‐Si pair diffusion and correlation in AlxGa1−xAs and GaAs

P. Gavrilovic, J. Gavrilovic, K. Meehan, R. W. Kaliski, L. J. Guido, N. Holonyak, K. Hess, and R. D. Burnham

Appl. Phys. Lett. 47, 710 (1985); http://dx.doi.org/10.1063/1.96067 (3 pages) | Cited 4 times

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The Si impurity is diffused into GaAs at temperatures in the range 725≤T≤850 °C. Secondary ion mass spectrometry (SIMS) analysis is used to obtain the Si atom density in the Si‐diffused layers. On the basis of the SIMS data and the observation of a distinct exciton peak in absorption for samples diffused at temperatures ≲775 °C, we argue that in the range nSi≲4×1018/cm3 the Si impurity diffused into GaAs is correlated and is incorporated as Si‐Si nearest‐neighbor pairs.
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66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
71.35.-y Excitons and related phenomena
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

High quality molecular beam epitaxial growth on patterned GaAs substrates

John Stephen Smith, Pamela L. Derry, Shlomo Margalit, and Amnon Yariv

Appl. Phys. Lett. 47, 712 (1985); http://dx.doi.org/10.1063/1.96012 (4 pages) | Cited 39 times

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In this letter we describe a procedure for high quality molecular beam epitaxy (MBE) growth over finely patterned GaAs substrates which is suitable for device fabrication requiring lateral definition of small (∼1–2 μm) dimension. This method was used for the fabrication of index guided laser arrays. Yields of individual lasers exceeded 90%, and thresholds were uniform to 10%. Temperature and flux ratio dependence of faceting during MBE growth over patterned substrates is shown for temperatures ranging from 580 to 700 °C and for As/Ga flux ratios from 1.4:1 to 4:1. The real index guided structure, which can be formed by a single MBE growth over a ridged substrate, is discussed. This technique should prove useful in the fabrication of devices which take advantage of unique features formed during regrowth by MBE.
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68.55.-a Thin film structure and morphology
42.55.Px Semiconductor lasers; laser diodes
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