Jump to Content
Your Recent History
View Cart
LOG IN or SELECT A PURCHASE OPTION:
Appl. Phys. Lett. 47, 707 (1985); http://dx.doi.org/10.1063/1.96066 (3 pages)
Passivation of recombination centers in n‐WSe2 yields high efficiency (>14%) photoelectrochemical cell
(Received 22 April 1985; accepted 11 July 1985)
Alerts
Alert Me When Cited
Alert Me When Corrected
Tools
Download Citation
Add to MyScitation
Permissions / Reprints
Blog This Article
Print-Friendly
Research Toolkit
Share
Email Abstract
Connotea
CiteULike
del.icio.us
BibSonomy
Tweet this Article
Add to FacebookIt is shown that careful photoetching of n‐WSe2 leads to a large improvement in its photoresponse. Conversion efficiencies in excess of 14% were obtained in polyiodide solution under simulated solar light. A significant red shift in the photocurrent spectrum is observed after photoetching as well as hexagonal etch pits which reduce the reflectivity of the surface.
RELATED DATABASES
To view database links for this article,
you need to log in.
KEYWORDS and PACS
ARTICLE DATA
Digital Object Identifier
PUBLICATION DATA
For access to fully linked references, you need to log in.
-
K. Tenne and G. Hodes, Appl. Phys. Lett. 37, 428 (1980APPLAB000037000004000428000001).
R. Tenne, B. Theys, J. Rioux, and C. Levy-Clement, J. Appl. Phys. 57, 141 (1985JAPIAU000057000001000141000001).
For access to citing articles, you need to log in.
This Publication
Scitation
SPIN
Google Scholar
PubMed