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Applied Physics Letters / Volume 47 / Issue 7

Appl. Phys. Lett. 47, 707 (1985); doi:10.1063/1.96066 (3 pages)

Passivation of recombination centers in n‐WSe2 yields high efficiency (>14%) photoelectrochemical cell

R. Tenne1 and A. Wold2

1Department of Materials Research, Weizmann Institute of Science, Rehovot 76100, Israel
2Department of Chemistry, Brown University, Providence, Rhode Island 02912

(Received 22 April 1985; accepted 11 July 1985)

It is shown that careful photoetching of n‐WSe2 leads to a large improvement in its photoresponse. Conversion efficiencies in excess of 14% were obtained in polyiodide solution under simulated solar light. A significant red shift in the photocurrent spectrum is observed after photoetching as well as hexagonal etch pits which reduce the reflectivity of the surface.

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KEYWORDS and PACS

Keywords

ETCHING, PHOTOELECTROCHEMICAL CELLS, EFFICIENCY, PHOTOCURRENTS, REFLECTIVITY, PASSIVATION, RECOMBINATION, PHOTOSENSITIVITY, SPECTRAL RESPONSE, TUNGSTEN SELENIDES, PHOTOVOLTAIC EFFECT, EXPERIMENTAL DATA

PACS

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.96066

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    K. Tenne and G. Hodes, Appl. Phys. Lett. 37, 428 (1980APPLAB000037000004000428000001).

    R. Tenne, B. Theys, J. Rioux, and C. Levy-Clement, J. Appl. Phys. 57, 141 (1985JAPIAU000057000001000141000001).


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