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Applied Physics Letters / Volume 47 / Issue 7

Appl. Phys. Lett. 47, 710 (1985); http://dx.doi.org/10.1063/1.96067 (3 pages)

Si‐Si pair diffusion and correlation in AlxGa1−xAs and GaAs

P. Gavrilovic1, J. Gavrilovic1, K. Meehan1, R. W. Kaliski1, L. J. Guido1, N. Holonyak1, K. Hess1, and R. D. Burnham2

1Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801
2Xerox Palo Alto Research Center, Palo Alto, California 94304

(Received 14 June 1985; accepted 11 July 1985)

The Si impurity is diffused into GaAs at temperatures in the range 725≤T≤850 °C. Secondary ion mass spectrometry (SIMS) analysis is used to obtain the Si atom density in the Si‐diffused layers. On the basis of the SIMS data and the observation of a distinct exciton peak in absorption for samples diffused at temperatures ≲775 °C, we argue that in the range nSi≲4×1018/cm3 the Si impurity diffused into GaAs is correlated and is incorporated as Si‐Si nearest‐neighbor pairs.

KEYWORDS and PACS

Keywords

DIFFUSION, SILICON, ATOM TRANSPORT, ALUMINIUM ARSENIDES, GALLIUM ARSENIDES, EXCITONS, SIMS, DOPING PROFILES, IMPURITIES, ABSORPTION SPECTRA

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.96067

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    W. D. Laidig, N. Holonyak, Jr., M. D. Camras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, Appl. Phys. Lett. 38, 776 (1981APPLAB000009000006000221000001).

    K. Meehan, N. Holonyak, Jr., J. M. Brown, M. A. Nixon, P. Gavrilovic, and R. D. Burnham, Appl. Phys. Lett. 45, 549 (1984APPLAB000045000005000549000001).

    R. W. Kaliski, P. Gavrilovic, K. Meehan, J. Gavrilovic, K. C. Hsieh, G. S. Jackson, N. Holonyak, Jr., J. J. Coleman, R. D. Burnham, R. L. Thornton, and T. L. Paoli, J. Appl. Phys. 58, 101 (1985JAPIAU000058000001000101000001).

    M. E. Greiner and J. F. Gibbons, Appl. Phys. Lett. 44, 750 (1984APPLAB000044000008000750000001).

    C. Kahn, S. A. Kulin, and B. L. Averback, Phys. Rev. 108, 965 (1957).

    P. D. Dapkus, N. Holonyak, Jr., J. A. Rossi, F. V. Williams, and D. A. High, J. Appl. Phys. 40, 3300 (1969JAPIAU000040000008003300000001).

    E. O. Kane, Phys. Rev. 131, 79 (1963).


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