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15 Oct 1985

Volume 47, Issue 8, pp. 769-897

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Intracavity nearly degenerate four‐wave mixing in a (GaAl)As semiconductor laser

Hisao Nakajima and Robert Frey

Appl. Phys. Lett. 47, 769 (1985); http://dx.doi.org/10.1063/1.96424 (3 pages) | Cited 23 times

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Intracavity nearly degenerate four‐wave mixing has been demonstrated by injecting a low intensity probe beam of frequency ω−δω inside a (GaAl)As semiconductor laser operating above threshold at the pump frequency ω. Conjugated reflectivities as high as 5000 together with a 25% energy conversion efficiency are reported with only a few milliwatt pump power. Additional peaks related to the ac stark effect have been observed at a detuning which depended on the pump power. This process could be useful for the study of instabilities occurring in lasers as well as for optical amplification in laser diodes.
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42.65.-k Nonlinear optics
42.55.Px Semiconductor lasers; laser diodes

Broadband laser diode emitting at 1.28 μm wavelength

K. Takada and J. Noda

Appl. Phys. Lett. 47, 771 (1985); http://dx.doi.org/10.1063/1.96032 (3 pages)

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This letter presents a broadband laser diode (LD) emitting at the 1.28 μm wavelength fabricated by introducing an absorption region (300 μm long) into a conventional 600‐μm‐long InGaAsP laser diode. The LD operates by the pulsed modulation of a high peak current whose repetition rate and duty cycle are respectively 200 kHz and 5%. The typical output power and the spectral width of the LD are 3.8 mW and 58 Å, and the measured coherence length is 210 μm.
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42.55.Px Semiconductor lasers; laser diodes

Energy extraction measurements of an electron beam pumped, high Kr concentration KrF laser at elevated temperatures

E. T. Salesky and W. D. Kimura

Appl. Phys. Lett. 47, 774 (1985); http://dx.doi.org/10.1063/1.96033 (3 pages) | Cited 1 time

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Energy extraction measurements are obtained with an electron beam pumped KrF laser for initial gas temperatures from 294 to 425 K. Gas mixtures investigated are 89.7% Ar/10% Kr/0.27% F2 at 1.23 amagats and 99.6% Kr/0.4% F2 at 0.81 amagats. These densities correspond to equivalent electron stopping powers and result in an average pump rate of ≊120 kW/cm3. Measured efficiencies do not increase significantly with temperature, in sharp contrast to earlier predictions. The Kr2F∗ fluorescence is monitored as a function of temperature, and lasing or nonlasing conditions. Although the Kr2F∗ fluorescence emission does decrease during lasing conditions indicating partial saturation of the molecule, the fluorescence also does not exhibit a strong temperature dependence. Computer simulations are in good agreement with the results when using an inverse square root temperature dependence for the Kr2F∗ formation.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Picosecond pulse amplification using a copper vapor laser

J. B. Hopkins and P. M. Rentzepis

Appl. Phys. Lett. 47, 776 (1985); http://dx.doi.org/10.1063/1.96034 (3 pages) | Cited 6 times

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A high repetition amplification scheme for picosecond pulses has been developed using a copper vapor laser. Pulses of <5 ps full width at half‐maximum duration and ∼0.7 nJ energy from a synchronously pumped mode‐locked dye laser have been amplified up to ∼50 μJ. This technique offers an attractive means for the generation of stable, high repetition 5 kHz picosecond pulses which can be used advantageously for spectroscopic and Raman studies.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.55.Mv Dye lasers

Broadband operation of coupled‐stripe multiple quantum well AlGaAs laser diodes

J. E. Epler, G. S. Jackson, N. Holonyak, R. L. Thornton, R. D. Burnham, and T. L. Paoli

Appl. Phys. Lett. 47, 779 (1985); http://dx.doi.org/10.1063/1.96035 (2 pages) | Cited 6 times

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A recently developed AlGaAs multiple stripe, multiple quantum well superluminescence light‐emitting diode (SLED) with an extremely low reflectivity front‐facet coating is operated as a high‐power laser in an external grating cavity over an unusually broad tuning range. The SLED diode is operated continuously (cw) in a tuning range Δℏω∼94 meV and a power output from the grating cavity of 75 mW (optical flux ∼500 mW within the compound cavity). Data are presented showing the output power as a function of wavelength at currents of 750 mA (7660 Å<λ<8040 Å) and 1.0 A (7620 Å<λ<8085 Å). The threshold current in pulsed laser operation is measured over a range of 130 meV.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
85.60.Jb Light-emitting devices
42.62.-b Laser applications

Homogeneous gain saturation in GaAs/AlGaAs quantum well lasers

E. O. Göbel, R. Höger, J. Kuhl, H. J. Polland, and K. Ploog

Appl. Phys. Lett. 47, 781 (1985); http://dx.doi.org/10.1063/1.96036 (3 pages) | Cited 20 times

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We have studied the dynamical behavior of laser emission in optically pumped GaAs/AlGaAs lasers with picosecond time resolution. We find a saturation of the spontaneous emission above threshold and a homogeneous reduction of carrier lifetime down to about 70 ps. These data suggest a homogeneous gain saturation in GaAs/AlGaAs quantum well lasers, similar to conventional double heterostructure lasers.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Phase‐matched second harmonic generation by a surface polariton along a silver layer on a slab‐type optical waveguide

K. Sasaki, H. Kawagishi, and Y. Ishijima

Appl. Phys. Lett. 47, 783 (1985); http://dx.doi.org/10.1063/1.96037 (3 pages) | Cited 1 time

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Phase‐matched second harmonic generation by a surface‐plasmon polariton was observed along a silver layer on a slab‐type optical waveguide with a Q‐switched neodymium:yttrium aluminum garnet laser (1.064 μm). A numerical analysis previous to the experiment was carried out by a perturbation method employing the conception of coupled modes between surface polariton waves and guided waves. In this case the slab‐type optical waveguide played the role of an energy storage layer to realize a longer macroscopic propagation length.
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42.79.Gn Optical waveguides and couplers
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)

Efficient second harmonic generation of 10‐μm radiation in AgGaSe2

R. C. Eckardt, Y. X. Fan, R. L. Byer, R. K. Route, R. S. Feigelson, and Jan van der Laan

Appl. Phys. Lett. 47, 786 (1985); http://dx.doi.org/10.1063/1.96038 (3 pages) | Cited 21 times

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AgGaSe2 crystals for nonlinear infrared applications are being grown reproducibly. Using high‐quality, 2‐cm‐long crystals, 14% energy and 60% peak intensity conversion efficiency have been demonstrated for second harmonic generation of the pulsed output of a CO2 miniature transversely excited atmospheric laser.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
81.10.Fq Growth from melts; zone melting and refining

Polarized shear waves using laser line sources and electromagnetic acoustic transducer detection

D. A. Hutchins and D. E. Wilkins

Appl. Phys. Lett. 47, 789 (1985); http://dx.doi.org/10.1063/1.96039 (3 pages) | Cited 8 times

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The polarization features of ultrasonic shear waves from a pulsed laser line source have been investigated, using detection by an electromagnetic acoustic transducer. The result is a means for undertaking polarized shear wave experiments over a wide bandwidth.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Pt Surface waves in solids and liquids
79.20.Ds Laser-beam impact phenomena
43.38.Dv Electromagnetic and electrodynamic transducers

Supersonic gas injection valve for beam neutralization from Applied‐B pulsed ion diodes

K. Horioka, K. Ohbayashi, H. Yoneda, and K. Kasuya

Appl. Phys. Lett. 47, 792 (1985); http://dx.doi.org/10.1063/1.95984 (2 pages) | Cited 1 time

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In place of conventional sonic injection gas puff valves, a supersonic gas injection nozzle has been developed to neutralize the pulsed ion beams extracted from Applied‐B magnetically insulated diodes. This valve is driven by the magnetic pressure produced by the diode field coil. The features of this nozzle are its simple geometry, repetition capability, and easy timeable operation. Amounts of gas introduced in the diode section depend on the plenum pressure. Preliminary results of beam neutralization are described briefly.
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47.60.Kz Flows and jets through nozzles
29.27.Eg Beam handling; beam transport
52.40.Mj Particle beam interactions in plasmas
29.27.-a Beams in particle accelerators

Direct evidence for co‐aggregation of carbon and oxygen in Czochralski silicon

F. Shimura, R. S. Hockett, D. A. Reed, and D. H. Wayne

Appl. Phys. Lett. 47, 794 (1985); http://dx.doi.org/10.1063/1.95985 (3 pages) | Cited 23 times

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Direct evidence for the co‐aggregation of oxygen and carbon is shown by secondary ion mass spectroscopy for a carbon‐doped Czochralski silicon crystal subjected to a heat treatment at 1000 °C. In conjunction with infared absorption data, the carbon enhancement effect on oxygen precipitation at 1000 °C in high carbon silicon is explained with the catalytic effect of carbon in modifying the interfacial energy or the point defect ambient at the oxygen precipitate surface.
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61.72.S- Impurities in crystals
81.40.Gh Other heat and thermomechanical treatments
66.30.J- Diffusion of impurities
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Melting of Ni40Pd40P20 glass

H. W. Kui and D. Turnbull

Appl. Phys. Lett. 47, 796 (1985); http://dx.doi.org/10.1063/1.95986 (2 pages) | Cited 36 times

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Upon reheating, most glassy metal alloys crystallize at a temperature not far removed from the glass temperature Tg and far below the liquidus temperature Tl. We have reported that the alloy Ni40Pd40P20, which exhibits a scaled glass temperature ∼0.68, has been melt quenched, under a flux of dehydrated B2O3, to glass at rates as low as 1°/s. Here we report experiments in which some specimens of this alloy, when similarly fluxed during reheating, have been reheated to temperatures within 50° of Tl and 280° above Tg at rates ∼2.5°/s, and then cooled again to Tg, without crystallization. From this behavior we infer that the steady frequency of homogeneous nucleation of crystals in the alloy is <10−1 cm−3 s−1.
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64.70.D- Solid-liquid transitions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Gh Other heat and thermomechanical treatments

EL2‐related defects in neutron irradiated GaAs1−xPx alloys

E. Muñoz, F. García, B. Jimenez, E. Calleja, A. Gomez, and V. Alcober

Appl. Phys. Lett. 47, 798 (1985); http://dx.doi.org/10.1063/1.95987 (3 pages) | Cited 4 times

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The generation of EL2‐related defects in GaAsP alloys by fast neutron irradiation has been studied through deep level transient spectroscopy and photocapacitance techniques. After irradiation p‐n junctions were not annealed at high temperatures. In the composition range x>0.4, fast neutrons generate a broad center at Ec−0.7 eV that it is suggested to belong to the EL2 family. The presence of photocapacitance quenching effects has been taken as a preliminary fingerprint to make the above assignment. From computer analysis of the nonexponential transient capacitance waveforms, evidence that neutron irradiation creates a family of midgap levels, EL2‐related, is found.
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61.80.Hg Neutron radiation effects
78.40.Fy Semiconductors

Dominant moving species in the formation of amorphous NiZr by solid‐state reaction

Y.‐T. Cheng, W. L. Johnson, and M.‐A. Nicolet

Appl. Phys. Lett. 47, 800 (1985); http://dx.doi.org/10.1063/1.95988 (3 pages) | Cited 56 times

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The displacements of W and Hf markers have been monitored by backscattering of MeV He to study the growth of the amorphous NiZr phase by solid‐state reaction. We find that the Ni is the dominant moving species in this reaction.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
68.55.-a Thin film structure and morphology
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
66.30.J- Diffusion of impurities

Direct determination of elastic strain in strained‐layer superlattices by high‐angle x‐ray interferences

E. J. Fantner

Appl. Phys. Lett. 47, 803 (1985); http://dx.doi.org/10.1063/1.95989 (3 pages) | Cited 4 times

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A novel nondestructive technique for the determination of elastic strains in strained‐layer superlattices, which is based on x‐ray diffractometry, is described. For the first time, the relative inclination of equivalent lattice planes due to elastic misfit strain in superlattices with small periods exhibiting high‐angle x‐ray interferences was measured. Sets of theta‐twotheta scans with a narrow detector slit were performed for various lattice planes of one crystallographic zone starting at different theta offsets. The value of the angle theta, at which the maximum peak intensity is observed, is a direct measure for the distortion of the strained superlattice layers. It allows the determination of the complete strain status in three dimensions in the individual constituents separately even without knowing the unstrained lattice constant. In addition, this technique is used in the wide temperature range of 10–350 K. It is applied to a study of PbTe‐PbSnTe superlattices grown on cleaved (111)‐BaF2 in order to determine both the elastic misfit and the temperature‐dependent substrate induced strains.
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61.05.C- X-ray diffraction and scattering
68.55.-a Thin film structure and morphology
68.60.-p Physical properties of thin films, nonelectronic
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Effects of implanted hydrogen on Pd2Si formation

A. Paccagnella, G. Majni, G. Ottaviani, and G. Della Mea

Appl. Phys. Lett. 47, 806 (1985); http://dx.doi.org/10.1063/1.95990 (3 pages) | Cited 1 time

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The Pd2Si growth kinetics for evaporated Pd films on (111) Si have been investigated by means of 2 MeV 4He+ backscattering spectrometry for as‐deposited and high dose H implanted samples in the 200–250 °C temperature range. The implantation energy has been chosen so that most of H atoms stop near the Si/Pd interface. The changes in the H distribution in the annealed samples have been investigated by means of the 1H(15N, αγ)12C resonant nuclear reaction. An increase of the growth rate and a decrease of the activation energy of the silicide formation process have been detected in the implanted samples with respect to the as‐deposited ones. The thermal treatment induces a noticeable decrease of H content.
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61.72.U- Doping and impurity implantation
68.55.-a Thin film structure and morphology
66.30.J- Diffusion of impurities
81.40.Gh Other heat and thermomechanical treatments

Interfacial forces and the fundamental nature of brittle cracks

Brian R. Lawn

Appl. Phys. Lett. 47, 809 (1985); http://dx.doi.org/10.1063/1.95991 (3 pages) | Cited 14 times

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A new conception of brittle fracture processes is presented. It is proposed that the crack‐tip structure is immutably sharp at the atomic level, such that the attendant growth laws are uniquely determined by the stress intensity factor K of ‘‘fracture mechanics’’ origin. Threshold features in the measured v(K) function for crack growth in interactive environments, previously put forward as evidence for fundamental changes in the tip structure by blunting, are shown to be more consistent with a negative K contribution from interfacial adhesive forces. These adhesive forces should be determinable from the crack velocity characteristics.
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62.20.M- Structural failure of materials
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Raman study on silica optical fibers subjected to high tensile stress

Yoshinori Hibino, Hiroaki Hanafusa, Kazuhiro Ema, and Shin‐ichi Hyodo

Appl. Phys. Lett. 47, 812 (1985); http://dx.doi.org/10.1063/1.95992 (3 pages) | Cited 12 times

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For silica (pure and synthetic) optical fibers, on which tensile stresses from 0 to 4 GPa were imposed, Raman studies were carried out. It has become evident by deconvoluting the silica Raman peaks that the main peak intensity at 440 cm−1 decreases with increasing stress while the peaks at 490, 604, and 800 cm−1 remain practically unchanged. The fact that the 490 cm−1 defect line was not affected by the stress applied to fibers is contrary to the conclusion by G. E. Walrafen, P. N. Krishnan, and S. W. Freiman [J. Appl. Phys. 52, 2832 (1981)]. The results obtained in the present study are rather extensively discussed from a microscopic view of silica glass networks.
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81.40.Tv Optical and dielectric properties related to treatment conditions
62.20.-x Mechanical properties of solids
62.50.-p High-pressure effects in solids and liquids
78.30.Hv Other nonmetallic inorganics

Solid phase epitaxy of deposited amorphous Ge on GaAs

C. J. Palmstrøm and G. J. Galvin

Appl. Phys. Lett. 47, 815 (1985); http://dx.doi.org/10.1063/1.95993 (3 pages) | Cited 8 times

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Solid phase epitaxial growth of electron beam deposited amorphous germanium on GaAs has been obtained. Contamination at the Ge/GaAs interface is observed to impede and even prevent epitaxy of the deposited Ge layer. Complete epitaxy of the Ge was obtained by thermal annealing (400 °C for 1 h) of layers deposited on in situ sputter cleaned GaAs substrates.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
64.70.K- Solid-solid transitions

Oxidation condition dependence of surface passivation in high efficiency silicon solar cells

A. W. Blakers and M. A. Green

Appl. Phys. Lett. 47, 818 (1985); http://dx.doi.org/10.1063/1.95994 (3 pages) | Cited 7 times

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Several recent high performance silicon solar cells have taken advantage of surface oxide passivation to improve both their short wavelength response and open‐circuit voltage. Using low resistivity substrates to minimize base recombination rates, the effect of oxidation conditions upon the passifying properties of thin oxides is quantified. It is shown that emitter recombination in high efficiency cells decreases by a factor of at least 3 and most probably 7 as the oxide growth temperature increases from 825 to 900 °C and the oxide thickness increases from 60 to 100 Å. This increase in performance is at the expense of a slight loss in cell short‐circuit current density.
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84.60.Jt Photoelectric conversion
81.65.-b Surface treatments

Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures

T. F. Kuech and R. Potemski

Appl. Phys. Lett. 47, 821 (1985); http://dx.doi.org/10.1063/1.95995 (3 pages) | Cited 28 times

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The mechanism of background impurity incorporation in the metalorganic vapor phase epitaxy of GaAs using triethylgallium and arsine was investigated over a wide range of growth parameters. The growth temperature, total reactor pressure, AsH3/Ga(C2H5)3 ratio, and the linear gas velocity were altered in order to ascertain the primary determinants of the background impurity incorporation in the ethyl based chemistry. The GaAs electrical and optical properties are, in general, independent of AsH3/Ga(C2H5)3 ratio but strongly dependent on growth temperature and reactor pressure. Reductions in the reactor pressure, at a constant mass flow rate, result in a linear decrease in the unintentional impurity incorporation, while not changing the growth rate. Substantial improvements in the layer purity with greatly reduced AsH3 consumption can be achieved. A general model of impurity incorporation which relates the effect of reactor pressure and impurity incorporation is presented.
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68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
61.72.U- Doping and impurity implantation
75.20.Ck Nonmetals

Electronic structure of the Si:O4 complex as related to the thermal donors in silicon

Vivili M. S. Gomes and José R. Leite

Appl. Phys. Lett. 47, 824 (1985); http://dx.doi.org/10.1063/1.95996 (3 pages) | Cited 7 times

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Rigorous self‐consistent electronic structure calculations were carried out for complexes containing four interstitial oxygen atoms in silicon. The isolated tetrahedral site interstitial oxygen impurity was also investigated and the results were correlated to the complexes formation. Our calculations indicate that four oxygen impurities in Td symmetry surrounding a silicon atom at the regular lattice site are deep acceptor centers. It is also found that distortions which drive the complex to one of the observed symmetries, D2d, remove the impurity levels from the gap. Therefore, we conclude that these complexes do not show thermal donor actions in silicon as has been suggested.
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78.40.Fy Semiconductors

Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures

W. I. Wang, E. E. Mendez, T. S. Kuan, and L. Esaki

Appl. Phys. Lett. 47, 826 (1985); http://dx.doi.org/10.1063/1.95997 (3 pages) | Cited 100 times

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Results on crystal orientation dependence of n‐ and p‐type Si doping in molecular beam epitaxial GaAs are presented. High electron and hole mobilities in AlGaAs/GaAs heterostructures on high index planes are demonstrated for the first time. The doping results should prove useful for various transistor structures and complementary circuits. Also, due to the differences in the band structure for different orientations, quantum well heterostructures are likely to exhibit many interesting phenomena which are strongly orientation dependent.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.U- Doping and impurity implantation
68.55.-a Thin film structure and morphology
85.30.De Semiconductor-device characterization, design, and modeling

High quality epitaxial GaAs and InP wafers by isoelectronic doping

H. Beneking, P. Narozny, and N. Emeis

Appl. Phys. Lett. 47, 828 (1985); http://dx.doi.org/10.1063/1.95998 (3 pages) | Cited 37 times

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It is shown that strained isoelectronically doped buffer layers grown on GaAs and InP wafers allow one to reduce the dislocation density drastically by a factor greater than 20. Correspondingly, the photoluminescence efficiency of near‐band‐edge emission is enhanced by about the same factor. By deep level transient spectroscopy measurements practically no deep levels can be detected in contrast to uncoated wafers. Applied to device fabrication a great improvement is found in comparison to conventionally fabricated optoelectronic and electronic devices.
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68.55.-a Thin film structure and morphology
78.40.Fy Semiconductors
85.30.De Semiconductor-device characterization, design, and modeling
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Deposition of indium antimonide films by metalorganic magnetron sputtering

James B. Webb and C. Halpin

Appl. Phys. Lett. 47, 831 (1985); http://dx.doi.org/10.1063/1.95999 (3 pages) | Cited 17 times

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A new technique, metalorganic magnetron sputtering (MOMS), has been developed for the deposition of compound semiconductors. In particular, results are reported on the deposition of the III‐V semiconductor indium antimonide from a high‐purity antimony target and trimethylindium (TMI) vapor using rf magnetron sputtering. The indium/antimony ratio of the films is found to depend linearly on the trimethylindium flow rate and the indium/argon emission peak ratio of the plasma. The stoichiometry of the layers is controlled by changing either the TMI flow or the sputter power. InSb layers can be deposited at temperatures considerably below the thermal decomposition temperature of TMI. Auger analysis shows up to 10% carbon incorporation occurs for films deposited at room temperature, but this is reduced below the level of detection for substrate temperatures >190 °C.
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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
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