APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Nov 1985

Volume 47, Issue 9, pp. 903-1014

Page 1 of 2 Pages Next Page | Jump to Page

Si‐implanted and disordered stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers

P. Gavrilovic, K. Meehan, L. J. Guido, N. Holonyak, V. Eu, M. Feng, and R. D. Burnham

Appl. Phys. Lett. 47, 903 (1985); http://dx.doi.org/10.1063/1.95973 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
The Si impurity is implanted into an AlxGa1−x As‐GaAs quantum well heterostructure to form, by impurity‐induced layer disordering and donor doping, a stripe‐geometry buried heterostructure laser.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
61.72.U- Doping and impurity implantation
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Fermi energy dependence of linewidth enhancement factor of GaAlAs buried heterostructure lasers

Y. Arakawa and A. Yariv

Appl. Phys. Lett. 47, 905 (1985); http://dx.doi.org/10.1063/1.95974 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
The linewidth enhancement factor α is measured in a number of GaAlAs lasers with different internal losses. It is found that α decreases monotonically with the increase of the loss (Fermi energy level) in agreement with the theoretical prediction. On the basis of these results the design of cavity length and mirror reflection in order to reduce the spectral linewidth of the laser output is discussed.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Wave front conjugation with gain and self‐oscillation with a nematic liquid‐crystal film

I. C. Khoo

Appl. Phys. Lett. 47, 908 (1985); http://dx.doi.org/10.1063/1.95975 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
We have observed for the first time wave front conjugation with amplified reflection return using the thermal nonlinearity of a thin film of nematic liquid crystal in conjunction with a low power laser (intensity on the order of 25 W/cm2). Self‐oscillation is also observed.
Show PACS
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
75.20.Ck Nonmetals
61.30.-v Liquid crystals

Highly damage resistant, broadband, hard antireflection coating for high power lasers in the ultraviolet to near‐infrared wavelength regions

K. Yoshida, H. Yoshida, Y. Kato, and C. Yamanaka

Appl. Phys. Lett. 47, 911 (1985); http://dx.doi.org/10.1063/1.95976 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Mechanically hard and broadband gradient refractive index antireflection coating was developed. It has a high damage threshold of ≳6 J/cm2 at 355 nm and 12–13 J/cm2 in the visible to near‐infrared region. It will be applicable to high power pulsed lasers as well as to industrial uses.
Show PACS
42.79.Wc Optical coatings
75.20.Ck Nonmetals
46.55.+d Tribology and mechanical contacts

Use of a plasma temporal attenuator to investigate the pulse length dependence of CO2 laser induced damage

D. R. Gibson and A. D. Wilson

Appl. Phys. Lett. 47, 914 (1985); http://dx.doi.org/10.1063/1.95977 (3 pages)

Full Text: | Download PDF

Show Abstract
A surface initiated plasma temporal attenuator enabling production of CO2 laser pulses with tunable durations (20–90 ns), similar temporal profiles, and near Gaussian spatial profiles, is described. Use of the technique to investigate the pulse length dependence and thereby elucidate the mechanism of CO2 laser damage is demonstrated for uncoated and diamondlike carbon antireflection coated n‐type Ge.
Show PACS
42.15.Eq Optical system design
42.87.-d Optical testing techniques
42.55.Lt Gas lasers including excimer and metal-vapor lasers
79.20.Ds Laser-beam impact phenomena
42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters

Direct measurement of dilute dye solution quantum yield by photothermal laser heterodyne interferometry

Wing‐Kee Lee, Ali Güngör, Ping‐Tong Ho, and Christopher C. Davis

Appl. Phys. Lett. 47, 916 (1985); http://dx.doi.org/10.1063/1.95978 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
Laser heterodyne measurements have been used to study the nonradiative energy loss of isolated rhodamine 6G molecules in methanol solutions with different potassium iodide quencher concentrations. Simultaneous measurement of both the relative fluorescent intensity and photothermal phase modulation induced by argon ion laser excitation allows absolute determination of both the quantum yield and the fraction of absorbed photo‐energy converted to heat. At zero quencher concentration, their values were found to be 98.2% and 12%, respectively.
Show PACS
78.55.Bq Liquids
33.50.Dq Fluorescence and phosphorescence spectra
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Efficient, damage resistant LiNbO3 acousto‐optic waveguide deflector

Mamoru Miyawaki and Shigetaro Ogura

Appl. Phys. Lett. 47, 918 (1985); http://dx.doi.org/10.1063/1.95979 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
An efficient, damage resistant, guided wave deflector in LiNbO3 has been fabricated by a combination of titanium diffusion, proton exchange in benzoic acid with lithium benzoate, and post‐annealing processes. The stability of the waveguide has been confirmed using x‐ray rocking curves. The insertion loss of interdigital transducer and the diffraction efficiency were found to depend on the wave number of OH absorption produced by proton exchange.
Show PACS
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography

Stop‐cleaved InGaAsP laser monolithically integrated with a monitoring detector

A. Antreasyan, C. Y. Chen, S. G. Napholtz, and D. P. Wilt

Appl. Phys. Lett. 47, 920 (1985); http://dx.doi.org/10.1063/1.95980 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
We report the monolithic fabrication of a stop‐cleaved laser with a monitoring detector. Stop‐cleaved, double channel planar buried heterostructure lasers with threshold currents of 57 mA have been obtained emitting at 1.3‐μm wavelength. For the monitoring detector on the same substrate we have estimated a quantum efficiency of 31% from the measured responsivity of 14.4 μA/mW and the theoretical diffraction coupling efficiency.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Laser‐initiated deposition reactions: Microchemistry in organogold polymer films

M. E. Gross, G. J. Fisanick, P. K. Gallagher, K. J. Schnoes, and M. D. Fennell

Appl. Phys. Lett. 47, 923 (1985); http://dx.doi.org/10.1063/1.95981 (3 pages) | Cited 40 times

Full Text: | Download PDF

Show Abstract
Micron‐sized gold features have been produced by the cw Ar+ laser‐initiated decomposition of thin organogold polymer films. These features may exhibit pronounced periodic structure under a wide variety of experimental conditions, resulting from propagation of the reaction front ahead of the laser by the heat of reaction associated with the chemical transformation. Gold features formed by irradiation of gold chloride‐doped polymer films further demonstrate these thermal effects. Thermoanalytical studies provide pertinent data for selection of suitable precursor materials.
Show PACS
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
68.55.-a Thin film structure and morphology
82.50.Hp Processes caused by visible and UV light

Acoustic wave generation by thermal excitation of small regions

G. S. Kino and R. G. Stearns

Appl. Phys. Lett. 47, 926 (1985); http://dx.doi.org/10.1063/1.95982 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Reciprocity theory is used to derive a general formalism for generation of acoustic waves by thermal excitation. It is shown that the most important parameters contributing to the generation include the thermal expansion of the material and its interaction with the volume dilation associated with the acoustic field of the receiving transducer. The excitation of a longitudinal acoustic wave, as a function of angle to the surface normal, is derived directly.
Show PACS
43.20.Rz Steady-state radiation from sources, impedance, radiation patterns, boundary element methods
41.20.Jb Electromagnetic wave propagation; radiowave propagation
65.40.De Thermal expansion; thermomechanical effects

Native hole trap in bulk GaAs and its association with the double‐charge state of the arsenic antisite defect

J. Lagowski, D. G. Lin, T.‐P. Chen, M. Skowronski, and H. C. Gatos

Appl. Phys. Lett. 47, 929 (1985); http://dx.doi.org/10.1063/1.95983 (3 pages) | Cited 67 times

Full Text: | Download PDF

Show Abstract
We have identified a dominant hole trap in p‐type bulk GaAs employing deep level transient and photocapacitance spectroscopies. The trap is present at a concentration up to about 4×1016 cm−3, and it has two charge states with energies 0.54±0.02 and 0.77±0.02 eV above the top of the valence band (at 77 K). From the upper level the trap can be photoexcited to a persistent metastable state just as the dominant midgap level, EL2. Impurity analysis and the photoionization characteristics rule out association of the trap with impurities Fe, Cu, or Mn. Taking into consideration theoretical results, it appears most likely that the two charge states of the trap are the single and double donor levels of the arsenic antisite AsGa defect.
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.40.Fy Semiconductors

Alignment of thin films by glancing angle ion bombardment during deposition

Lock See Yu, James M. E. Harper, Jerome J. Cuomo, and David A. Smith

Appl. Phys. Lett. 47, 932 (1985); http://dx.doi.org/10.1063/1.95931 (2 pages) | Cited 52 times

Full Text: | Download PDF

Show Abstract
Glancing angle ion bombardment during thin‐film deposition is shown to have a pronounced alignment effect on crystallographic orientation. Restricted fiber texture is achieved in Nb films deposited at room temperature onto amorphous silica substrates by Ar ion beam sputtering, with simultaneous bombardment by 200 eV Ar+ ions at 20° from glancing angle. The alignment direction corresponds to a channeling direction for the incident ions between (110) planes, for which a low sputtering yield is expected. The degree of alignment is measured as a function of ion/atom arrival rate ratio up to 1.3 Ar+ ions per Nb film atom, and is shown to increase monotonically with the fraction resputtered.
Show PACS
68.55.-a Thin film structure and morphology
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Phase formation and reaction kinetics in the thin‐film Co/GaAs system

A. J. Yu, G. J. Galvin, C. J. Palmstrøm, and J. W. Mayer

Appl. Phys. Lett. 47, 934 (1985); http://dx.doi.org/10.1063/1.95932 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
The solid state reaction between a Co thin film and (100) GaAs was investigated using Rutherford backscattering spectrometry. At 400 °C a reacted layer of composition Co:Ga:As=2:1:1 was observed to form. This reaction product obeys diffusion controlled growth kinetics and maintains its composition for annealing (400 °C) from 15 min up to 24 h.
Show PACS
68.55.-a Thin film structure and morphology
64.70.K- Solid-solid transitions
68.60.-p Physical properties of thin films, nonelectronic
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Laser produced Ti/Ti‐oxide thin‐film structures

M. Thuillard and M. von Allmen

Appl. Phys. Lett. 47, 936 (1985); http://dx.doi.org/10.1063/1.95933 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Pulsed laser irradiation of thin, vacuum‐deposited layers of Ti on suitable substrates in air produces structures consisting of metallic islands connected by oxide filaments. The topology as well as the dimensions of the structures can be controlled by selection of the laser fluence and the film parameters. The electrical characteristics of the structure can be varied continuously from metallic to insulating, covering a range of resistances spanning 10 orders of magnitude.
Show PACS
68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.05.Bx Metals, semimetals, and alloys
73.61.-r Electrical properties of specific thin films

Picosecond laser induced anomalous crystallization in amorphous silicon

Yoshihiko Kanemitsu, Ichiro Nakada, and Hiroto Kuroda

Appl. Phys. Lett. 47, 939 (1985); http://dx.doi.org/10.1063/1.95934 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Two different values of thresholds for crystallization of amorphous silicon were observed by using picosecond laser pulses. One of the crystallization thresholds is found experimentally to be clearly below the amorphization threshold. The other crystallization threshold is well above the amorphization threshold. Additionally, small changes of surface height are observed even at the unannealed region far outside the central annealed region. These results imply that shock stress generated by picosecond heating is important in the crystallization process.
Show PACS
64.70.D- Solid-liquid transitions
79.20.Ds Laser-beam impact phenomena
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Wear and hardness of diamondlike coatings prepared by ion beam deposition

J. Koskinen, J‐P. Hirvonen, and A. Anttila

Appl. Phys. Lett. 47, 941 (1985); http://dx.doi.org/10.1063/1.95935 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
The wear rate of 10‐μm‐thick 12C coatings prepared by mass separated ion beam deposition has been measured to be 60 times lower than WC+Co hard metal and 10 times lower than the conventional hard coating material TiN. The hardness of the 12C coatings was measured to be at least the same as that of the natural diamonds.
Show PACS
62.20.Qp Friction, tribology, and hardness
46.55.+d Tribology and mechanical contacts
81.40.Pq Friction, lubrication, and wear
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Amorphous iron zirconium formed by solid state reaction

B. M. Clemens and M. J. Suchoski

Appl. Phys. Lett. 47, 943 (1985); http://dx.doi.org/10.1063/1.95936 (2 pages) | Cited 36 times

Full Text: | Download PDF

Show Abstract
We report on the first iron based amorphous alloy formed by the process of solid state reaction. Amorphous iron zirconium was observed to result from thermal anneals of layered crystalline elemental constituents. Starting material was electron beam evaporated with about 50 monolayers of each constituent per layer, which results in an average composition of Fe61Zr39 and a compositional wavelength of 22 nm. Thermal anneals at 623 K were performed in vacuum, and x‐ray diffraction was used to determine the structure. A calculated metastable free energy diagram shows the reaction is driven by a large thermodynamic driving force (several kcal/mole).
Show PACS
81.05.Kf Glasses (including metallic glasses)
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
61.66.Dk Alloys

Effects of heat treatments of GaAs on the near‐surface distribution of EL2 defects

K. Wada and N. Inoue

Appl. Phys. Lett. 47, 945 (1985); http://dx.doi.org/10.1063/1.95937 (3 pages) | Cited 19 times

Full Text: | Download PDF

Show Abstract
A cluster model is proposed for the midgap state EL2 in GaAs based on a defect reaction similar to that of the thermal donor formation in silicon. Anomalous depth profiles of the EL2 defects in bulk GaAs created by heat treatment have been quantitatively explained, assuming that the EL2 defect is a four point defect cluster. Possible candidates of the point defects are discussed.
Show PACS
78.40.Fy Semiconductors
61.72.U- Doping and impurity implantation
81.40.Gh Other heat and thermomechanical treatments

Influence of stress on light‐induced effects in amorphous silicon alloys

S. Guha, W. den Boer, S. C. Agarwal, and M. Hack

Appl. Phys. Lett. 47, 947 (1985); http://dx.doi.org/10.1063/1.95938 (3 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
We have studied the effect of stress on light‐induced changes in photoconductivity and solar cell performance of amorphous silicon alloys. We find no correlation between degradation and stress in the material.
Show PACS
84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects

Determination of minority‐carrier generation lifetime in beam‐recrystallized silicon‐on‐insulator structure by using a depletion‐mode transistor

D. P. Vu and J. C. Pfister

Appl. Phys. Lett. 47, 950 (1985); http://dx.doi.org/10.1063/1.95939 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
We describe a technique for measuring minority‐carrier lifetime on a very small area of material and apply this technique to recrystallized silicon layers on an insulating substrate where the localization of the crystalline defects gives rise to small defect‐free regions actually used for devices. The method uses a depletion‐mode transistor in which drain‐source conductance yields a signal equivalent to capacitance signal, thus allowing measurements equivalent to conventional Zerbst transient capacitance to be made in the defect‐free regions.
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperature

T. Hayakawa, T. Suyama, K. Takahashi, M. Kondo, S. Yamamoto, S. Yano, and T. Hijikata

Appl. Phys. Lett. 47, 952 (1985); http://dx.doi.org/10.1063/1.95940 (3 pages) | Cited 36 times

Full Text: | Download PDF

Show Abstract
The interface disorder of quantum wells grown by molecular beam epitaxy at high substrate temperature is investigated by low‐temperature photoluminescence. The excitonic emission from a single quantum well is a single sharp peak, and the well width precisely determined from the emission peak energy does not equal to integral multiples of one‐monolayer width in almost all samples. These results indicate that the lateral size of growth islands with a one‐monolayer height is much smaller than the exciton diameter and a one‐monolayer interface acts as a layer with smaller AlAs mole fraction than the barrier layer.
Show PACS
68.55.-a Thin film structure and morphology
78.40.Fy Semiconductors
71.35.-y Excitons and related phenomena

Blue luminescence of a ZnSe‐ZnS0.1Se0.9 strained‐layer superlattice on a GaAs substrate grown by low‐pressure organometallic vapor phase epitaxy

Shigeo Fujita, Yoshinobu Matsuda, and Akio Sasaki

Appl. Phys. Lett. 47, 955 (1985); http://dx.doi.org/10.1063/1.95941 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
The ZnSe‐ZnS0.1Se0.9 strained‐layer superlattice (SLS) with an average lattice parameter equal to that of GaAs has been grown on a (100)GaAs substrate at a growth temperature of 400 °C by a low‐pressure organometallic vapor‐phase epitaxy using dimethylzinc, H2Se, and H2S as sources. The SLS’s exhibited strong blue photoluminescence with a single emission peak, while ZnSe epitaxial layers grown directly on the GaAs substrates showed several peaks related to some defects or impurities together with excitonic emission lines at a near band edge region. Intense blue emission was also observed in ZnS0.05Se0.95 layers grown on the top of the SLS structures. Low‐temperature photoluminescence has been investigated to examine the influence of the structural variation on the properties of these layers.
Show PACS
68.55.-a Thin film structure and morphology
78.40.Fy Semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Evidence for induced far‐infrared emission from p‐Ge in crossed electric and magnetic fields

S. Komiyama, N. Iizuka, and Y. Akasaka

Appl. Phys. Lett. 47, 958 (1985); http://dx.doi.org/10.1063/1.95942 (3 pages) | Cited 32 times

Full Text: | Download PDF

Show Abstract
Experimental evidence is presented for stimulated far‐infrared emission from population‐inverted hot‐carrier system in p Ge. The spectroscopic study by use of an n‐InSb cyclotron‐resonance detector reveals that the spectrum of the emission consists of a fairly sharp band located at the photon energy ∼5 or ∼10 meV depending on the applied fields.
Show PACS
78.45.+h Stimulated emission
72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Ht High-field and nonlinear effects
42.55.Px Semiconductor lasers; laser diodes

Bias dependence of doping efficiency in hydrogenated amorphous silicon

F. Alvarez

Appl. Phys. Lett. 47, 960 (1985); http://dx.doi.org/10.1063/1.95943 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
This letter is concerned with the doping efficiency of phosphorus and boron doped samples of hydrogenated amorphous silicon grown under different substrate bias conditions. Although in a capacitively coupled glow discharge system generally the powered electrode is negatively self‐polarized, some control of the dc bias is obtained by changing the electrode areas and/or using an external bias. It has been found that the activation energy of doped samples depends on the polarity and magnitude of an external dc bias applied to the substrate support. This result was used to enhance the incorporation of residual boron in the intrinsic layer of p‐i‐n structures fabricated onto a indium‐tin‐oxide coated glass.
Show PACS
61.72.U- Doping and impurity implantation
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
52.80.Pi High-frequency and RF discharges

Evidences that P diffusion in Si is assisted mainly by vacancies

D. Mathiot and J. C. Pfister

Appl. Phys. Lett. 47, 962 (1985); http://dx.doi.org/10.1063/1.95944 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
A reexamination of some experimental results, including very high concentration phosphorus diffusion with self‐interstitial injection, leads to the conclusion that P diffusion is assisted mainly by vacancies. This point is also strengthened by a simple calculation showing that the dominant defect for P diffusion plays the minor role in self‐diffusion.
Show PACS
66.30.J- Diffusion of impurities
61.72.jd Vacancies
61.72.jj Interstitials
66.30.Dn Theory of diffusion and ionic conduction in solids
66.30.H- Self-diffusion and ionic conduction in nonmetals
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close