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30 Jun 1986

Volume 48, Issue 26, pp. 1767-1812


Ridge waveguide AlGaAs/GaAs distributed feedback lasers with multiple quantum well structure

S. Noda, K. Kojima, K. Mitsunaga, K. Kyuma, K. Hamanaka, and T. Nakayama

Appl. Phys. Lett. 48, 1767 (1986); http://dx.doi.org/10.1063/1.96779 (3 pages) | Cited 5 times

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Ridge waveguide AlGaAs/GaAs distributed feedback lasers with multiple quantum well structure were fabricated for the first time. The threshold current of 28 mA, which is the lowest ever reported among AlGaAs/GaAs distributed feedback lasers, was obtained at room temperature. Stable single longitudinal and transverse mode oscillation was observed over the wide temperature range. The dynamic linewidth was also measured and it was five to six times smaller than that of a double heterostructure distributed feedback laser.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

In‐phase locking in diffraction‐coupled phased‐array diode lasers

Shyh Wang, Jaroslava Z. Wilcox, Michael Jansen, and Jane J. Yang

Appl. Phys. Lett. 48, 1770 (1986); http://dx.doi.org/10.1063/1.96780 (3 pages) | Cited 19 times

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Design criteria are presented for strong in‐phase coupling of diffraction‐coupled phased‐array diode lasers. Theoretical predictions are confirmed by our experimental observations of double‐lobe and single‐lobe far‐field patterns.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Measurement of excited‐state densities during high‐current operation of a hydrogen thyratron using laser‐induced fluorescence

D. A. Erwin and M. A. Gundersen

Appl. Phys. Lett. 48, 1773 (1986); http://dx.doi.org/10.1063/1.96781 (3 pages) | Cited 4 times

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The population of the n=2 level of atomic hydrogen and the collisional relaxation rates of the n=3 and n=4 levels during the conductive phase in the positive column of a high‐current ( J∼100–400 A/cm2) pulse in a hydrogen thyratron were measured. These results demonstrate laser‐induced fluorescence to be a useful in situ diagnostic for high‐current switch plasmas.
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52.80.-s Electric discharges
52.75.Kq Plasma switches (e.g., spark gaps)
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.20.Fs Electron collisions

Influence of the circuit impedance on an electron beam controlled diffuse discharge with a negative differential conductivity

G. Schaefer, K. H. Schoenbach, M. Kristiansen, B. E. Strickland, R. A. Korzekwa, and G. Z. Hutcheson

Appl. Phys. Lett. 48, 1776 (1986); http://dx.doi.org/10.1063/1.96782 (3 pages) | Cited 4 times

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The use of attaching gases in an externally sustained diffuse discharge opening switch with a low attachment rate at low values of E/N and a high attachment rate at high values of E/N allows the discharge to operate with low losses in the closed switch phase and to achieve fast opening after the sustainment source is turned off. Such an attacher generates a J‐E/N characteristic with a negative differential conductivity in an intermediate E/N range. Such a characteristic obstructs the closing process of the discharge if it is operated in a high impedance system. Experiments demonstrating these effects are presented for electron beam sustained discharges in mixtures of argon and C2F6.
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52.75.Kq Plasma switches (e.g., spark gaps)
52.80.Tn Other gas discharges
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
84.32.Dd Connectors, relays, and switches

Reformulation of atom location by channeling enhanced microanalysis

E. Goo

Appl. Phys. Lett. 48, 1779 (1986); http://dx.doi.org/10.1063/1.96783 (1 page) | Cited 4 times

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The current formulation for atom location by channeling enhanced microanalysis requires three characteristic x‐ray spectra and is overdefined [J. C. H. Spence and J. Tafto, J. Microscopy 130, 147 (1983)]. A formulation is presented where only two characteristic x‐ray spectra are needed to determine the distribution of substitutional impurity atoms in a layered compound.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.jd Vacancies
61.72.jj Interstitials

Observation of double light pulses in thin‐film ZnS:Mn electroluminescent devices

E. Bringuier and A. Geoffroy

Appl. Phys. Lett. 48, 1780 (1986); http://dx.doi.org/10.1063/1.96784 (3 pages) | Cited 15 times

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Thin‐film ZnS:Mn electroluminescent devices can exhibit, under pulsed electrical excitation, a double light pulse, as has been previously observed in other phosphors. We specify the conditions under which this phenomenon appears and relate it to the basic mechanism of carrier emission in the active layer.
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78.60.Fi Electroluminescence
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
75.20.Ck Nonmetals

Chemical etching for the evaluation of hydrogenated amorphous silicon films

T. L. Chu and Shirley S. Chu

Appl. Phys. Lett. 48, 1783 (1986); http://dx.doi.org/10.1063/1.96785 (2 pages) | Cited 1 time

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Chemical etching using a 1:5:40 HF‐HNO3‐CH3COOH solution has been used for the evaluation of hydrogenated amorphous silicon (a‐Si:H) films. The dissolution rate of a‐Si@B:H films and the structural features brought out by etching have revealed significant differences in the properties of a‐Si:H films deposited in hydrogen and helium atmospheres. Unintentionally contaminated a‐Si@B:H films have also been found to show considerably higher dissolution rate than intrinsic films, and the dissolution rate measurements may be used to optimize the deposition conditions.
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81.65.-b Surface treatments
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology

Self‐aligned polycrystalline silicon thin‐film transistors by laser implantation

P. Coxon, M. Lloyd, and P. Migliorato

Appl. Phys. Lett. 48, 1785 (1986); http://dx.doi.org/10.1063/1.96786 (2 pages) | Cited 3 times

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Polycrystalline silicon thin‐film transistors have been fabricated using photochemical doping with phosphorus from the gas phase by ultraviolet laser. The results obtained show the technique to be a viable alternative to ion implantation for applications such as three‐dimensional very large scale integrated circuits.
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85.30.Tv Field effect devices
81.40.Rs Electrical and magnetic properties related to treatment conditions
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Growth of GaAs by switched laser metalorganic vapor phase epitaxy

Atsutoshi Doi, Yoshinobu Aoyagi, and Susumu Namba

Appl. Phys. Lett. 48, 1787 (1986); http://dx.doi.org/10.1063/1.96787 (3 pages) | Cited 17 times

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Crystal growth of GaAs by switched laser metalorganic vapor phase epitaxy (SL MOVPE) is reported. This growth technique is achieved by combining laser MOVPE and atomic layer epitaxy. The growth process in SL MOVPE can be explained by a model which assumes that trimethylgallium adsorbed on the crystal surface is decomposed in a photocatalytic reaction and that the decomposition rate depends on the surface species present on the substrate.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Low‐temperature deposition of low resistivity ZnSe films by reactive sputtering

R. J. Stirn and A. Nouhi

Appl. Phys. Lett. 48, 1790 (1986); http://dx.doi.org/10.1063/1.96788 (3 pages) | Cited 3 times

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Low resistivity semiconducting films of ZnSe have been deposited at temperatures as low as 120 °C using dc magnetron co‐sputtering of Zn and In (dopant) targets in a reactive atmosphere of H2Se/Ar. Yellowish transparent films of ZnSe on glass and conductive transparent oxide‐coated glass substrates were obtained having a room‐temperature resistivity as low as 20 Ω cm. Atomic absorption analysis showed a Zn to Se ratio of 49.8:49.0 and In concentration of about 1% for the reactively sputter‐deposited ZnSe:In films on glass. Optical absorption/transmission measurements yielded an energy band gap of about 2.65 eV at room temperature. X‐ray diffraction results indicated highly oriented polycrystalline films on glass with the c axis parallel to the plane of the film.
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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
75.20.Ck Nonmetals
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

100‐μm‐wide silicon‐on‐insulator structures by Si molecular beam epitaxy growth on porous silicon

T. L. Lin, S. C. Chen, Y. C. Kao, K. L. Wang, and S. Iyer

Appl. Phys. Lett. 48, 1793 (1986); http://dx.doi.org/10.1063/1.96789 (3 pages) | Cited 11 times

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100‐μm silicon‐on‐insulator structures have been achieved by first utilizing silicon molecular beam epitaxial (Si MBE) growth on porous silicon and subsequently oxidizing the porous silicon through the patterned Si MBE film windows. A Si beam method is used for the low‐temperature surface cleaning of porous silicon prior to Si MBE growth. By using a two‐step growth technique, the Si MBE film shows good crystallinity checked by Rutherford backscattering channeling spectroscopy and cross‐sectional transmission electron microscopy. An electron mobility of 1300 cm2 V−1 s−1 with a doping concentration of 6×1015 cm−3 has been achieved.
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81.65.-b Surface treatments
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Ty Semiconductor-insulator-semiconductor structures
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Schottky barrier heights of Hg, Cd, and Zn on n‐type InP(100)

C. J. Sa and L. G. Meiners

Appl. Phys. Lett. 48, 1796 (1986); http://dx.doi.org/10.1063/1.96790 (3 pages) | Cited 9 times

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We report a study of the electrical properties of Schottky barrier heights of column IIB metals (Hg, Cd, and Zn) on chemically cleaned n‐type InP(100). Hg/InP diodes were formed by using a commercially available mercury probe, while Cd/InP diodes and Zn/InP diodes were fabricated by electroplating techniques. Dark forward bias current‐voltage as well as dark reverse bias capacitance‐voltage measuring techniques were used to characterize the samples. The barrier heights were found to be 0.92, 0.62, and 0.43 eV for Hg/n‐InP, Cd/n‐InP, and Zn/n‐InP, respectively. The barrier heights for Hg/n‐InP and Cd/n‐InP are higher than commonly thought possible on n‐type InP.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

InGaAs/InAlAs hot‐electron transistor

U. K. Reddy, J. Chen, C. K. Peng, and H. Morkoç

Appl. Phys. Lett. 48, 1799 (1986); http://dx.doi.org/10.1063/1.96791 (3 pages) | Cited 10 times

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Using InGaAs for the base and InAlAs for the emitter and collector barriers, we have fabricated the first hot‐electron transistor in this material system. We have shown that 1.6% of the injected hot electrons can be transported ballistically through a 0.3‐μm‐thick In0.53Ga0.47As plus 800‐Å‐thick InAlAs barrier layer at 77 K giving rise to an average mean free path of 920 Å. An energy spread of 130 meV was observed for the ballistic electrons injected at about 700 meV above the thermal equilibrium conditions. The values of collector barrier heights measured are in reasonable agreement with those deduced independently from thermionic emission studies in InGaAs gate, InAlAs/InGaAs capacitor structures.
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85.30.De Semiconductor-device characterization, design, and modeling
73.40.Gk Tunneling
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Metals on cadmium telluride: Schottky barriers and interface reactions

I. M. Dharmadasa, W. G. Herrenden‐Harker, and R. H. Williams

Appl. Phys. Lett. 48, 1802 (1986); http://dx.doi.org/10.1063/1.96792 (3 pages) | Cited 3 times

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The Schottky barriers formed for a wide range of metals on (110) n‐CdTe surfaces have been studied using current‐voltage and capacitance‐voltage techniques. The surfaces were prepared by cleaving in ultrahigh vacuum, cleaving in air, and chemical etching. The electrical barriers are drastically influenced by oxide layers on the surface. Most metals on the chemically etched surfaces yield barriers having values around 0.7 eV but Mn, Cr, and V are notable exceptions, yielding ohmic or low barrier contacts. Microscopic interactions of these interfaces have also been studied by soft x‐ray photoemission using synchrotron radiation. Detailed comparisons of the microscopic interaction of Ag and Mn with the clean and oxidized surfaces, using photoemission, are presented. In contrast to the behavior of Ag, the Mn overlayer completely reduces the CdTe native oxide layer, resulting in lower barrier contacts.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
73.40.Cg Contact resistance, contact potential

Rapid thermal annealing of high concentration, arsenic implanted silicon single crystals

A. Nylandsted Larsen, S. Yu. Shiryaev, E. Schwartz Sørensen, and P. Tidemand‐Petersson

Appl. Phys. Lett. 48, 1805 (1986); http://dx.doi.org/10.1063/1.96793 (3 pages) | Cited 23 times

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Rapid thermal annealing of arsenic implanted 〈100〉 silicon single crystals has been studied by Rutherford backscattering/channeling spectrometry, and Hall effect/resistivity measurements, combined with layer removal. Redistribution of the implanted arsenic was followed as a function of anneal time (6–60 s including temperature rise time) and implanted peak concentration (3–10×1020 cm−3) at temperatures of 1050 and 1090 °C. The maximum concentration of electrically active arsenic was found to be 2–3×1020 cm−3 independent of anneal time and implanted peak concentration. Fast arsenic redistribution was observed to take place within the first 20 s of annealing. Complete arsenic activation occurred by means of rapid redistribution to the solubility limit.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Rs Electrical and magnetic properties related to treatment conditions

Nb3Sn(Ti) powder metallurgy processed high field superconductors

S. Pourrahimi, C. L. H. Thieme, S. Foner, and M. Suenaga

Appl. Phys. Lett. 48, 1808 (1986); http://dx.doi.org/10.1063/1.96794 (3 pages) | Cited 2 times

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Powder metallurgy processed Nb3Sn(Ti) superconducting wires were fabricated with Sn x wt. % Ti cores for 0≤x≤3, 16 or 22 vol % cores, and a Cu 45 wt. % Nb composite. The processing used swaging, cold hydrostatic extrusions, wire drawing and heat treatments of 750 °C for two to four days. Nominal areal reductions of 104 were used. Hydride‐dehydride Nb and rotating electrode processed Nb powders gave the same performance. Overall critical current densities Jc were measured between 4.2 and 1.8 K for applied fields up to 23 T. Jc increased with increased Ti and/or Sn content. The Nb3Sn(Ti) wires using a Sn 3 wt. % Ti, 22 vol % core gave Jc >104 A/cm2 at 20 T and 4.2 K and Jc =104 A/cm2 at 23 T at 1.8 K. Removal of the precompression of the matrix increased Jc by about a factor of 2 at 20 T and 4.2 K.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.70.-b Superconducting materials other than cuprates
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
FREE

Erratum: Noninvasive sheet charge density probe for integrated silicon devices [Appl. Phys. Lett. 48, 1066 (1986)]

H. K. Heinrich, D. M. Bloom, and B. R. Hemenway

Appl. Phys. Lett. 48, 1811 (1986); http://dx.doi.org/10.1063/1.97040 (1 page) | Cited 2 times

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Abstract Unavailable
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85.60.Dw Photodiodes; phototransistors; photoresistors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
07.60.Ly Interferometers
85.30.De Semiconductor-device characterization, design, and modeling
99.10.Cd Errata
FREE

Erratum: Galvanomagnetic luminescence of indium antimonide [Appl. Phys. Lett. 47, 1330 (1985)]

Paul Berdahl and Louie Shaffer

Appl. Phys. Lett. 48, 1811 (1986); http://dx.doi.org/10.1063/1.97042 (1 page) | Cited 2 times

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Abstract Unavailable
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72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.60.-b Other luminescence and radiative recombination
99.10.Cd Errata
FREE

Erratum: Nanometer molecular lithography [Appl. Phys. Lett. 48, 676 (1986)]

Kenneth Douglas, Noel A. Clark, and Kenneth J. Rothschild

Appl. Phys. Lett. 48, 1812 (1986); http://dx.doi.org/10.1063/1.97041 (1 page)

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Abstract Unavailable
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81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Jj Ion and electron beam-assisted deposition; ion plating
99.10.Cd Errata
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