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24 Mar 1986

Volume 48, Issue 12, pp. 745-811


Asymmetric noise and output power in semiconductor lasers with optical feedback near threshold

J. Mink and B. H. Verbeek

Appl. Phys. Lett. 48, 745 (1986); http://dx.doi.org/10.1063/1.96707 (3 pages) | Cited 4 times

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An asymmetry in the output power and the low‐frequency noise emitted from the rear and front facets of index‐guided semiconductor lasers with a large percentage of optical feedback into the front facet is reported. Transitions from coherent to incoherent feedback‐induced properties by modulation of the feedback path length can be distinguished in the output power versus current (L‐I) curve. A cross‐over point is found only in the front facet L‐I curve corresponding to a minimum in the noise. A model is presented which correctly describes the asymmetry between the L‐I curve of the front and rear facets. It also predicts the observed cross‐over point in the front facet L‐I curve.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Dry‐etched‐cavity pair‐groove‐substrate GaAs/AlGaAs multiquantum well lasers

Tonao Yuasa, Masaya Mannoh, Kiyoshi Asakawa, Keisuke Shinozaki, and Makoto Ishii

Appl. Phys. Lett. 48, 748 (1986); http://dx.doi.org/10.1063/1.96708 (3 pages) | Cited 10 times

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A fabrication technique based on reactive ion beam etching is presented for the formation of the facet mirrors on GaAs/AlGaAs lasers called pair‐groove‐substrate (PGS) multiquantum well lasers. Laser cavities with vertical and smooth walls are achieved with this etching technique by using a high‐temperature baked photoresist mask. PGS lasers with 200‐μm‐long etched cavities show a low pulsed threshold current of 29 mA and a high external differential quantum efficiency of 43%. The threshold current is comparable to those of cleaved lasers. Room‐temperature cw operation is easily realized in junction‐up mounting.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
81.65.-b Surface treatments

Generation of subpicosecond electrical pulses on coplanar transmission lines

M. B. Ketchen, D. Grischkowsky, T. C. Chen, C‐C. Chi, I. N. Duling, N. J. Halas, J‐M. Halbout, J. A. Kash, and G. P. Li

Appl. Phys. Lett. 48, 751 (1986); http://dx.doi.org/10.1063/1.96709 (3 pages) | Cited 79 times

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Electrical pulses shorter than 0.6 ps were generated by photoconductively shorting a charged coplanar transmission line with 80 fs laser pulses. After propagating 8 mm on the line the electrical pulses broadened to only 2.6 ps.
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84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
85.60.-q Optoelectronic devices
84.32.Dd Connectors, relays, and switches

Streak‐camera observation of 200‐ps recovery of an optical gate in a windowless GaAs étalon array

Y. H. Lee, M. Warren, G. R. Olbright, H. M. Gibbs, N. Peyghambarian, T. Venkatesan, J. S. Smith, and A. Yariv

Appl. Phys. Lett. 48, 754 (1986); http://dx.doi.org/10.1063/1.96710 (3 pages) | Cited 18 times

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Fast recovery (<200 ps) of an optical gate at room temperature in a GaAs étalon is observed by eliminating the top AlGaAs window and defining 9×9 μm2 pixels. This recovery time is at least an order of magnitude shorter than that for previous étalons consisting of AlGaAs/GaAs/AlGaAs heterostructures. The fast recovery is attributed to faster surface recombination of carriers at the GaAs‐dielectric mirror interface as compared to that at a GaAs‐AlGaAs interface.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Plastic optical fibers for near‐infrared transmission

Toshikuni Kaino

Appl. Phys. Lett. 48, 757 (1986); http://dx.doi.org/10.1063/1.96711 (2 pages) | Cited 12 times

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A new plastic optical fiber using pentafluoro trideutero styrene as a core has been prepared which enables stable transmission of near‐infrared (near‐IR) optical signals. Replacement of hydrogen in the core polymer with a combination of fluorine and deuterium effectively reduces molecular vibrational absorption from the near‐IR to the visible region. A 174 dB/km attenuation loss was obtained in the 850 nm region. Fluorination of aromatic hydrogen of styrene suppresses the water vapor absorption very effectively, and stable optical attenuation under high humidity is achieved.
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42.81.Dp Propagation, scattering, and losses; solitons
42.81.Bm Fabrication, cladding, and splicing
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

New ‘‘diamondlike carbon’’ film deposition process using plasma assisted chemical vapor transport

Charles B. Zarowin, Natarajan Venkataramanan, and Richard R. Poole

Appl. Phys. Lett. 48, 759 (1986); http://dx.doi.org/10.1063/1.96712 (3 pages) | Cited 9 times

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We have deposited ‘‘diamondlike carbon’’ films on various substrates using a new plasma assisted chemical vapor transport process in a high rf power density presssure ratio gas discharge. The films reported here exhibit the following properties: (1) high transparency for wavelengths greater than 300 nm; (2) an index of refraction of ∼2 at 850 nm; (3) a hardness between that of quartz and sapphire, increasing with ion energy bombarding the deposition surface; (4) strong adhesion to KBr, sapphire, and Si substrates; (5) high dielectric strength; (6) inertness to highly reactive chemicals.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
75.20.Ck Nonmetals
68.60.Bs Mechanical and acoustical properties
52.75.-d Plasma devices

Double probe model of radio frequency capacitively coupled planar discharges

A. M. Pointu

Appl. Phys. Lett. 48, 762 (1986); http://dx.doi.org/10.1063/1.96713 (2 pages) | Cited 20 times

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A simple model, using a quasi‐stationary, asymmetric, double probe theory, is presented to describe radio frequency planar glow discharge with a capacitively coupled excitation electrode. It reasonably agrees with available experimental results at frequencies lower than the ionic plasma frequency.
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52.80.Hc Glow; corona
52.80.Pi High-frequency and RF discharges
52.70.Ds Electric and magnetic measurements

Graphoepitaxy of platinum on sawtooth profile gratings

Keiko Kushida, Hiroshi Takeuchi, Toshio Kobayashi, and Kazumasa Takagi

Appl. Phys. Lett. 48, 764 (1986); http://dx.doi.org/10.1063/1.96714 (3 pages) | Cited 6 times

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Graphoepitaxy of Pt films on sawtooth profile gratings is realized. Gratings with 0.4 μm period are fabricated in (100)Si wafers using laser holographic lithography and Si anisotropic etching. Pt films evaporated at 200 °C on the gratings and annealed at 800 °C have (100) planes parallel to the substrate. From scanning electron micrograph it is found that the 100‐nm‐thick Pt film consists of crystallites embedded in the gratings. The grain size is about one grating period wide and 0.5–5 μm long. Continuous films with (100) orientation are produced after further deposition and annealing.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
42.79.Dj Gratings
81.65.-b Surface treatments
68.55.-a Thin film structure and morphology

Interaction of TiSi2 layers with polycrystalline Si

L. R. Zheng, L. S. Hung, S. Q. Feng, P. Revesz, J. W. Mayer, and G. Miles

Appl. Phys. Lett. 48, 767 (1986); http://dx.doi.org/10.1063/1.96715 (3 pages) | Cited 21 times

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Interactions of silicide films with undoped polycrystalline layers of Si grown by chemical vapor deposition at 630 °C were investigated by MeV He ion backscattering spectrometry, scanning electron microscopy, and transmission electron microscopy. For TiSi2, heat treatment in vacuum at temperatures above 850 °C results in erosion of the polycrystalline Si layer and growth of Si crystallites in the silicide film. The same phenomenon is observed for NiSi, Pd2Si, and CrSi2 at temperatures above one‐half of melting point of the corresponding silicide.
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66.30.Ny Chemical interdiffusion; diffusion barriers
81.40.Gh Other heat and thermomechanical treatments
61.72.up Other materials
68.35.Fx Diffusion; interface formation

Chloride vapor phase epitaxial growth of high‐purity GaInP

Masataka Hoshino, Kunihiko Kodama, Kuninori Kitahara, and Masashi Ozeki

Appl. Phys. Lett. 48, 770 (1986); http://dx.doi.org/10.1063/1.96716 (3 pages) | Cited 4 times

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High‐purity GaInP alloy was grown by chloride vapor phase epitaxy (Ga/In/PCl3/H2 system) with two separate metal source regions. The alloy composition could be precisely controlled by using separate regions for Ga and In metals. From the photoluminescence and Hall effect analysis, epitaxial layers lattice matched to GaAs substrates showed high emission efficiency, the full width at half‐maximum of the free‐exciton luminescence was as narrow as 7.4 meV at 77 K (3.8 meV at 4.2 K), and the low impurity concentration was below 1.5×1015 cm−3.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.40.Fy Semiconductors

Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2 patterns on Si substrates

Hiroshi Ishiwara, Akihiro Tamba, and Seijiro Furukawa

Appl. Phys. Lett. 48, 773 (1986); http://dx.doi.org/10.1063/1.96717 (3 pages) | Cited 11 times

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Lateral solid phase epitaxy (L‐SPE) of amorphous Si (a‐Si) films onto nonplanar SiO2 patterns on Si(100) substrates was investigated. The patterns were formed by local oxidation of silicon (LOCOS) and the thickness of the SiO2 films ranged from 60 to 470 nm. The L‐SPE characteristics similar to those for planar patterns were observed in dense a‐Si films prepared by high‐temperature vacuum deposition and subsequent ion implantation. The maximum L‐SPE lengths onto the LOCOS patterns were 4.5, 6.5, and 44 μm in undoped, B‐doped, and P‐doped samples, respectively.
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81.15.Np Solid phase epitaxy; growth from solid phases
81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Far‐infrared emission from two‐dimensional plasmons in AlGaAs/GaAs heterointerfaces

Noriyuki Okisu, Yasuo Sambe, and Takeshi Kobayashi

Appl. Phys. Lett. 48, 776 (1986); http://dx.doi.org/10.1063/1.96718 (3 pages) | Cited 19 times

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A modified dispersion formula describing two‐dimensional (2D) plasmons in AlGaAs/GaAs heterointerfaces was derived and its validity was experimentally checked by observation of the far‐infrared signal from grating coupled 2D plasmons in selectively doped AlGaAs/GaAs heterointerfaces. The plasmon resonance frequency shift towards higher energy observed by Höpfel et al. [Surf. Sci. 113, 118 (1982)] can be explained by our present dispersion formula.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
75.20.Ck Nonmetals
78.60.-b Other luminescence and radiative recombination
85.30.De Semiconductor-device characterization, design, and modeling

Silicon surface roughness—Structural observation by reflection electron microscopy

Kouichirou Honda, Akira Ohsawa, and Nobuo Toyokura

Appl. Phys. Lett. 48, 779 (1986); http://dx.doi.org/10.1063/1.96719 (3 pages) | Cited 6 times

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Surface roughness of polished silicon wafers was observed by reflection electron microscopy. Small steps were clearly resolved as fringe pattern, and rather rough steps of 1.2–1.6 nm in height and 200–500 nm in interval were observed as dark and bright bands. This is the first direct visualization of polished wafer surface roughness.
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68.35.Gy Mechanical properties; surface strains
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

New method for separating and characterizing interface states and oxide traps on oxidized silicon

Chih‐Tang Sah, Wallace Wan‐Li Lin, Samuel Cheng‐Sheng Pan, and Charles Ching‐Hsiang Hsu

Appl. Phys. Lett. 48, 782 (1986); http://dx.doi.org/10.1063/1.96720 (3 pages) | Cited 3 times

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The generation‐annealing kinetics of interface and oxide traps are separated using a new time‐dependent high‐frequency capacitance‐voltage technique based on the independence of the trapped oxide charge density on the silicon surface energy band bending or surface potential. An application example of this new technique is described which gives the post‐irradiation room‐temperature annealing rates and annealed densities of the two oxide and two interface traps generated by an 8‐keV electron beam.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Bb Theories and models of crystal defects
61.80.Fe Electron and positron radiation effects
85.30.Tv Field effect devices

Molecular beam epitaxial growth of a novel strained layer type III superlattice system: HgTe‐ZnTe

J. P. Faurie, S. Sivananthan, X. Chu, and P. S. Wijewarnasuriya

Appl. Phys. Lett. 48, 785 (1986); http://dx.doi.org/10.1063/1.96721 (3 pages) | Cited 9 times

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HgTe‐ZnTe strained type III superlattices have been grown for the first time using the molecular beam epitaxy technique. Three superlattices grown at 185 °C have been characterized by electron and x‐ray diffraction, infrared absorption, and Hall measurements. The presence of satellite peaks in the x‐ray spectra shows that the superlattices are of good quality despite the large lattice mismatch between HgTe and ZnTe (Δa/a=6.5%). These superlattices are p type and the hole mobilities are very high compared to those of the corresponding alloy. Such a phenomenon has already been reported for HgTe‐CdTe superlattices. Infrared transmission spectra show that HgTe‐ZnTe superlattices have narrower band gaps than equivalent HgZnTe alloys.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
75.20.Ck Nonmetals

Infrared spectrophotometry of carbon‐induced localized vibrational mode in indium‐doped liquid‐encapsulated Czochralski GaAs

Y. Kitagawara, T. Itoh, N. Noto, and T. Takenaka

Appl. Phys. Lett. 48, 788 (1986); http://dx.doi.org/10.1063/1.96670 (3 pages) | Cited 4 times

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Infrared absorption measurements are performed for a carbon‐induced localized vibrational mode in indium‐doped semi‐insulating GaAs crystals. Increase of the indium concentration in GaAs is found to result in a shift of the absorption peak to the lower energy side and a broadening of full width at half‐maximum of the peak. The peak shift of 1 cm−1 corresponds to the change of indium concentration by 2.7×1020 cm−3. For a quantitative analysis of carbon, infrared absorptions are compared with carbon concentrations measured by secondary ion mass spectrometry. The absorption intensity of 1 cm−2 is found to correspond to the carbon concentration of (2.3±1.0)×1016 cm−3.
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63.20.Pw Localized modes
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.30.Hv Other nonmetallic inorganics

Resistance fluctuations in ohmic contacts due to discreteness of dopants

W. J. Boudville and T. C. McGill

Appl. Phys. Lett. 48, 791 (1986); http://dx.doi.org/10.1063/1.96671 (3 pages) | Cited 13 times

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The role of fluctuations in the potential due to randomly distributed dopants in the depletion layer of a metal‐semiconductor junction is explored. To be specific, the case of n‐GaAs is considered. Monte Carlo simulation techniques are used to calculate the potential in the junction. By using the WKB approximation and the two‐band model, the small‐signal resistance at zero bias is found to be lowered by up to half an order of magnitude from the result assuming a continuum distribution of dopant charge. The resistance is found to vary by an order of magnitude in the plane of the interface resulting in a very nonuniform distribution of the current.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Gk Tunneling

Microstructure of high‐temperature annealed buried oxide silicon‐on‐insulator

B.‐Y Mao, P.‐H. Chang, H. W. Lam, B. W. Shen, and J. A. Keenan

Appl. Phys. Lett. 48, 794 (1986); http://dx.doi.org/10.1063/1.96672 (3 pages) | Cited 49 times

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The microstructure of buried oxide silicon‐on‐insulator (SOI) annealed in the temperature range of 1150–1300 °C was examined. The microstructure of the buried oxide SOI was improved by increasing the annealing temperature. The minimum channeling yield of the top silicon layer in 1250 °C annealed SOI measured by Rutherford backscattering and channeling analysis is 5% which is comparable to unprocessed bulk single crystal material. This is further verified by the cross‐sectional transmission electron microscopy observation of the precipitate‐free top silicon layer with low dislocation density. The improvement in the microstructure is attributed to the dissolution of oxygen precipitates and oxygen outdiffusion during high‐temperature annealing.
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61.72.Bb Theories and models of crystal defects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition

B. S. Meyerson

Appl. Phys. Lett. 48, 797 (1986); http://dx.doi.org/10.1063/1.96673 (3 pages) | Cited 225 times

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We have successfully demonstrated the use of a novel chemical vapor deposition technique, ultrahigh vacuum/chemical vapor deposition, to deposit homoepitaxial silicon layers of high crystalline perfection at low temperatures (T≥750 °C). Rutherford backscattering and transmission electron microscopy showed the transition to epitaxial silicon growth took place in the range 700–750 °C, and secondary ion mass spectrometry showed typical oxygen and carbon levels to be near the detection limits of the technique 1016–1017 cm−3. In addition, abrupt dopant transitions have been demonstrated, with B levels dropping four orders of magnitude, 1019–1015 B/cm3, in the first 1000 angstroms of an intrinsic epilayer.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Quantum well AlxGa1−xAs‐GaAs lasers with internal (Si2)x(GaAs)1−x barriers

R. D. Burnham, N. Holonyak, K. C. Hsieh, R. W. Kaliski, D. W. Nam, R. L. Thornton, and T. L. Paoli

Appl. Phys. Lett. 48, 800 (1986); http://dx.doi.org/10.1063/1.96674 (3 pages) | Cited 12 times

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Data are presented showing that the alloy (Si2)x(GaAs)1−x can be formed in a GaAs quantum well (QW) and shifts the operation of an AlxGa1−xAs‐GaAs QW laser to higher energy. The (Si2)x(GaAs)1−x barrier, which is formed by sheet deposition (metalorganic chemical vapor deposition) of Si on the initial portion of a GaAs QW layer and then by ‘‘capping’’ this with the remaining part of the QW, can be observed directly by transmission electron microscopy.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Transmission electron microscopy studies on lateral reaction of GaAs with Ni

S. H. Chen, C. B. Carter, C. J. Palmstrøm, and T. Ohashi

Appl. Phys. Lett. 48, 803 (1986); http://dx.doi.org/10.1063/1.96675 (3 pages) | Cited 9 times

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A method is described for preparing lateral Ni‐GaAs diffusion couples for transmission electron microscopy (TEM) investigations. The diffusion couples are annealed in situ in a TEM using a hot stage. The growth of a ternary phase has been observed, and shows parabolic time dependence of the growth. At 200–300 °C, Ni is the predominant diffusion species while Ga and As are essentially immobile. The experimental results are compared with previous investigations of the reactions of Ni thin films with bulk GaAs.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
06.60.Ei Sample preparation (including design of sample holders)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.Fx Diffusion; interface formation

Variably spaced superlattice energy filter, a new device design concept for high‐energy electron injection

C. J. Summers and K. F. Brennan

Appl. Phys. Lett. 48, 806 (1986); http://dx.doi.org/10.1063/1.96676 (3 pages) | Cited 26 times

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A new variably spaced superlattice energy filter is proposed which provides high‐energy injection of electrons into a bulk semiconductor layer based on resonant tunneling between adjacent quantum well levels which are brought into alignment by an applied bias. Applications of this concept to a variety of optoelectronic devices and to thin‐film electroluminescent devices and photodetectors are discussed.
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73.40.Ty Semiconductor-insulator-semiconductor structures
85.60.Gz Photodetectors (including infrared and CCD detectors)
78.60.Fi Electroluminescence
73.40.Gk Tunneling

Detection of Ga vacancies in electron irradiated GaAs by positrons

P. Hautojärvi, P. Moser, M. Stucky, C. Corbel, and F. Plazaola

Appl. Phys. Lett. 48, 809 (1986); http://dx.doi.org/10.1063/1.96677 (2 pages) | Cited 59 times

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Positron lifetime measurements have been used to study the recovery of electron irradiated GaAs between 77 and 800 K. Below room temperature positrons are trapped by vacancies in Ga sublattices. The Ga vacancies recover between 200 and 350 K.
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61.72.jd Vacancies
61.72.jj Interstitials
61.80.Fe Electron and positron radiation effects
78.70.Bj Positron annihilation
78.40.Fy Semiconductors
FREE

Erratum: Response of piezoelectric lead metaniobate to high compressive stresses [Appl. Phys. Lett. 47, 1356 (1985)]

A. Amin and S. J. Lukasiewicz

Appl. Phys. Lett. 48, 811 (1986); http://dx.doi.org/10.1063/1.97035 (1 page)

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Abstract Unavailable
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77.22.Ej Polarization and depolarization
77.65.-j Piezoelectricity and electromechanical effects
62.20.-x Mechanical properties of solids
81.40.Rs Electrical and magnetic properties related to treatment conditions
99.10.Cd Errata
FREE

Erratum: Eigenmode analysis of phase‐locked semiconductor laser arrays [Appl. Phys. Lett. 48, 16 (1986)]

Yihjye Twu, Kuo‐Liang Chen, Shyh Wang, J. R. Whinnery, and A. Dienes

Appl. Phys. Lett. 48, 811 (1986); http://dx.doi.org/10.1063/1.97036 (1 page)

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Abstract Unavailable
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Gn Optical waveguides and couplers
99.10.Cd Errata
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