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7 Apr 1986

Volume 48, Issue 14, pp. 885-951


Linewidth reduction of 1.5‐μm grating loaded external cavity semiconductor laser by geometric reconfiguration

Chien‐Yu Kuo and J. P. van der Ziel

Appl. Phys. Lett. 48, 885 (1986); http://dx.doi.org/10.1063/1.96647 (3 pages) | Cited 2 times

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It is found experimentally that the linewidth of a grating loaded external cavity semiconductor laser is inversely proportional to the square of the linear dimension of the overall cavity. This observed behavior is consistent with the existing theories on the linewidth of a laser with an extended passive cavity. A slope of 6.5×105 Hz cm2 is obtained from least‐squares fitting the linewidth vs 1/(cavity length)2 curve at 1 mW of power. However, the linewidth reaches a lower limit when the cavity length is extended beyond a certain limit. This result suggests that additional phase noise term should be included in the calculation of linewidths of these extended cavity semiconductor lasers. We also report a value as small as 18 kHz mW in the linewidth vs 1/(power) curve.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Coherent beam addition of GaAlAs lasers by binary phase gratings

James R. Leger, Gary J. Swanson, and Wilfrid B. Veldkamp

Appl. Phys. Lett. 48, 888 (1986); http://dx.doi.org/10.1063/1.96648 (3 pages) | Cited 18 times

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A general technique for combining laser beams coherently using binary gratings has been developed. Experiments were performed with lasers from a monolithic linear GaAlAs array. The grating transmittance profile was designed to convert the light beams from the array into a single beam with high efficiency. Optical feedback through the grating locked the lasers together in proper relative phase. The far‐field diffraction pattern of the sum was practically identical in shape to that of a single laser. Coupling efficiencies greater than 80% appear to be feasible with this technique. The method is applicable to a variety of laser systems (gas, solid state, etc.) and is readily extendable to a two‐dimensional array of lasers.
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42.55.Mv Dye lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes

Waveguiding in soft x‐ray laser experiments

James G. Lunney

Appl. Phys. Lett. 48, 891 (1986); http://dx.doi.org/10.1063/1.96649 (3 pages) | Cited 28 times

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In soft x‐ray laser experiments using laser produced plasmas on thick targets the steep electron density gradients in the plasma can cause refraction of the soft x rays out of the region of gain. It is shown how this refraction problem can be overcome by bending the target to a concave cylindrical or toroidal surface. The possibility of waveguiding in these soft x‐ray laser schemes is also examined.
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42.55.Mv Dye lasers
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
42.60.By Design of specific laser systems

Pump intensity dependent cavity mode frequency shifting in a 12.08 μm NH3 laser

S. C. Mehendale, R. G. Harrison, and A. Vass

Appl. Phys. Lett. 48, 894 (1986); http://dx.doi.org/10.1063/1.96650 (3 pages) | Cited 2 times

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Experimental and theoretical results are presented for a CO2 laser pumped 12.08 μm NH3 laser which show evidence of pump intensity dependent unidirectional cavity mode frequency shifting rather than conventional frequency pulling. The frequency shifting arises due to the near‐resonant nature of lasing in this system and hence should be a common feature of optically pumped lasers involving off‐resonant pumping.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.55.-f Lasers

Kr2F∗ fluorescence measurements of electron beam pumped KrF laser mixtures

W. D. Kimura and E. T. Salesky

Appl. Phys. Lett. 48, 897 (1986); http://dx.doi.org/10.1063/1.96651 (3 pages) | Cited 1 time

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The time‐dependent Kr2F∗ fluorescence and KrF∗ laser emission of an electron beam pumped KrF laser are measured for two gas mixtures, 89.7% Ar/10% Kr/0.27% F2 and 99.6% Kr/0.4% F2, at initial gas temperatures from 294 to 417 K and for pulse lengths >600 ns. The measurements indicate an inverse square root temperature dependence for the Kr2F∗ formation, which is weaker than earlier predictions. Analysis of the Kr2F∗ and KrF∗ data also indicates that electron quenching and the effects of gas heating during the pump pulse significantly affect the laser performance of the Kr/F2 mixture. Results of a model agree well with the data.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.50.Dq Fluorescence and phosphorescence spectra
42.55.-f Lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Simulation studies of bifurcation and chaos in semiconductor lasers

Ming Tang and Shyh Wang

Appl. Phys. Lett. 48, 900 (1986); http://dx.doi.org/10.1063/1.96652 (3 pages) | Cited 28 times

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We apply the phase portrait analysis for photon density and carrier density to analyze simulation results obtained from the rate equations for semiconductor lasers. On the two‐dimensional bifurcation diagram of modulation depth and modulation frequency, there are six regions: periodic pulse, continuous oscillation wave, chaos, period doubling of single period, period multiplying of single period, and period doubling of two period. The region of chaos is located below the region of periodic pulse. By properly choosing the modulation frequency, chaotic behavior can be avoided. A normalized two‐dimensional bifurcation diagram defining the periodic pulse region is presented for the purpose of locating the suitable region for modulation of a semiconductor laser.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

High performance GaInAsSb/GaSb p‐n photodiodes for the 1.8–2.3 μm wavelength range

A. K. Srivastava, J. C. DeWinter, C. Caneau, M. A. Pollack, and J. L. Zyskind

Appl. Phys. Lett. 48, 903 (1986); http://dx.doi.org/10.1063/1.96653 (2 pages) | Cited 33 times

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GaInAsSb/GaSb p‐n heterojunction photodiodes prepared by liquid phase epitaxy are described. The low net acceptor concentration obtained by Te compensation of the quaternary layer permits a room‐temperature external quantum efficiency of 67±5% to be achieved at a wavelength of 2.2 μm.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Mechanism for the threshold voltage shift of a GaAs field‐effect transistor around dislocations

Shintaro Miyazawa and Kazumi Wada

Appl. Phys. Lett. 48, 905 (1986); http://dx.doi.org/10.1063/1.97018 (3 pages) | Cited 33 times

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The effect of gate‐to‐pit distance on threshold votlage for GaAs field‐effect transistors was examined in detail for the area around dislocated ‘‘lineage’’ boundaries. From this investigation, a clear dislocation proximity effect is recognized. The most possible mechanism for threshold voltage shift is presented referring to the EL2 concentration increase at lineage and the model for EL2 formation previously reported. This model proposes the increase in As‐interstitial concentration around dislocations, leaving a region of increased [VGa]/[VAs] ratio, is responsible for the threshold voltage shift.
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85.30.Tv Field effect devices
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.jd Vacancies
61.72.jj Interstitials
61.72.Yx Interaction between different crystal defects; gettering effect

Polarity determination of CdTe(111) orientation grown on GaAs(100) by molecular beam epitaxy

C. Hsu, S. Sivananthan, X. Chu, and J. P. Faurie

Appl. Phys. Lett. 48, 908 (1986); http://dx.doi.org/10.1063/1.96654 (3 pages) | Cited 30 times

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Since the crystallographic polarity of the CdTe(111) buffer layer can change the growth conditions of HgCdTe, HgMnTe, and HgZnTe, it is important to know the polarity of the terminating of the CdTe(111)∥GaAs(100) substrates. It is especially important since this composite substrate appears as the candidate for replacement of CdTe for epitaxial growth of Hg‐based II‐VI compounds. The identification of the orientation is reported here for the first time by x‐ray photoelectron spectroscopy, chemical etching, and in situ electron diffraction. From all three techniques, the results show unambiguously that the CdTe(111)B face (Te face) is the terminating surface for CdTe(111) growing on GaAs(100) substrates.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

GaInAs‐InP multiquantum well structures grown by metalorganic gas phase epitaxy with adducts

F. Scholz, P. Wiedemann, K. W. Benz, G. Tränkle, E. Lach, A. Forchel, G. Laube, and J. Weidlein

Appl. Phys. Lett. 48, 911 (1986); http://dx.doi.org/10.1063/1.96655 (2 pages) | Cited 4 times

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We report the first successful growth of GaInAs‐InP multiquantum well structures by metalorganic gas phase epitaxy with adducts in one single reactor. The properties of the two‐dimensional electron gas in these samples were studied in detail by photoluminescence measurements and Shubnikov–de Haas experiments.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.40.Fy Semiconductors

Photoluminescence efficiency recovery due to enhanced annealing of radiation defect in p‐type InP by photogenerated carrier recombination

H. Kamada, K. Ando, and M. Yamaguchi

Appl. Phys. Lett. 48, 913 (1986); http://dx.doi.org/10.1063/1.96656 (3 pages) | Cited 3 times

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Photoluminescence efficiency recovery in 1‐MeV electron irradiated InP due to photon excitation is demonstrated. Photoluminescence intensity recovers with incident excitation power in an exponential‐like manner and its recovery rate increases when temperature rises. These phenomena are explained via the recovery of the minority carrier diffusion length which is degraded through recombination center introduction by electron irradiation. Temperature dependence of recovery rate is quite similar to that of annealing rate of a dominant hole trap named H4 and recombination enhanced annealing of this defect is responsible for photoluminescence recovery.
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78.40.Fy Semiconductors
61.80.Fe Electron and positron radiation effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.40.Tv Optical and dielectric properties related to treatment conditions

Hydrogenation of the ‘‘new oxygen donor’’ traps in silicon

K. Hölzlein, G. Pensl, M. Schulz, and N. M. Johnson

Appl. Phys. Lett. 48, 916 (1986); http://dx.doi.org/10.1063/1.96657 (3 pages) | Cited 16 times

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Hydrogenation was performed at moderate temperatures (≤300 °C) on Czochralski‐grown Si samples that contained high concentrations of the oxygen‐related ‘‘new donor’’ (ND) traps. From deep level transient spectroscopy, a comparison of spectra from untreated reference and hydrogenated material reveals that two different types of defect states contribute to the continuous energy distribution of the ND traps. The experimental and theoretical results further establish the ‘‘SiOx interface’’ model for the ND defects.
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78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.-b Surface treatments

Temperature‐dependent pinning at the Al/n‐GaAs(110) interface

T. Kendelewicz, M. D. Williams, K. K. Chin, C. E. McCants, R. S. List, I. Lindau, and W. E. Spicer

Appl. Phys. Lett. 48, 919 (1986); http://dx.doi.org/10.1063/1.96658 (3 pages) | Cited 8 times

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It is shown that at the Al/n‐GaAs(110) interface grown in ultrahigh vacuum at −80 °C the Fermi level remains unpinned at least up to a 3 monolayer coverage. In contrast, at room temperature the pinning near midgap is established after a deposition of approximately 1 monolayer of Al. The low‐temperature behavior is correlated with the growth of a more uniform overlayer which inhibits cluster and defect formation. This result provides a critical test of models of Schottky barrier formation.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
68.35.Dv Composition, segregation; defects and impurities

Dependence of hole transport on Ga doping in Si molecular beam epitaxy layers

A. Casel, H. Jorke, E. Kasper, and H. Kibbel

Appl. Phys. Lett. 48, 922 (1986); http://dx.doi.org/10.1063/1.96659 (3 pages) | Cited 14 times

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Ga‐doped silicon layers with constant profiles were grown by molecular beam epitaxy (MBE) at 650 °C and by solid phase epitaxy in the MBE system at a regrowth temperature 600 °C. By the latter technique, doping levels up to 2×1020 cm−3 were achieved. The electrical properties were investigated by temperature‐dependent Hall measurements. The resulting hole concentration was compared with the Ga concentration, determined by neutron activation analysis: At room temperature the ionization of the Ga acceptor was concentration dependent and exhibited a minimum of 50% at 1019 cm−3. Comparison with B‐doped silicon showed a significant lower mobility for carrier concentration above 1019 cm−3.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Np Solid phase epitaxy; growth from solid phases

Device quality AlGaAs/GaAs heterostructures grown in a multichamber organometallic vapor phase epitaxial apparatus

J. R. Shealy

Appl. Phys. Lett. 48, 925 (1986); http://dx.doi.org/10.1063/1.96660 (3 pages) | Cited 8 times

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The use of a vertical multichamber organometallic vapor phase epitaxial (OMVPE) reactor for the growth of compound semiconductors is described. The formation of abrupt AlGaAs/GaAs heterostructures has been achieved by positioning the substrates by rotation in growth zones with the appropriate combinations of the sources; trimethylgallium, trimethylaluminum, and arsine. Photoluminescence, Raman spectroscopy, and cross‐sectional transmission electron microscopy are used to demonstrate the optical quality and structural properties of the epitaxial films produced by this variation of the OMVPE technique. Device quality films are demonstrated by the fabrication of all superlattice separate confining laser structures emitting over the wavelength range from 740 to 855 nm.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
75.20.Ck Nonmetals
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
42.55.Px Semiconductor lasers; laser diodes

Galvanomagnetic properties of lead‐telluride quantum wells

J. Heremans, D. L. Partin, P. D. Dresselhaus, M. Shayegan, and H. D. Drew

Appl. Phys. Lett. 48, 928 (1986); http://dx.doi.org/10.1063/1.96661 (3 pages) | Cited 5 times

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The first in‐plane galvanomagnetic measurements on PbTe quantum wells are presented. The samples were 70‐Å‐wide wells sandwiched between lattice‐matched PbEuSeTe layers which have 500 meV gaps. PbTe has a 187 meV gap at 0 K. The magnetoresistance and Hall effect were measured from 0 to 22 T and 0.5 to 300 K. The results can be explained if we assume that the wells are modulation doped p type to 3.7×1013 cm−2, and that there are 3×1012 cm−2 highly mobile holes which show Shubnikov–de Haas oscillations due to the splitting of size‐quantized subbands into Landau levels. The influence of illumination is also shown: up to 1014 cm−2 carriers with a lifetime of the order of 102 min can be photoexcited in the structure.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Observations on intensity oscillations in reflection high‐energy electron diffraction during epitaxial growth of Si(001) and Ge(001)

J. Aarts, W. M. Gerits, and P. K. Larsen

Appl. Phys. Lett. 48, 931 (1986); http://dx.doi.org/10.1063/1.96662 (3 pages) | Cited 52 times

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Intensity oscillations have been found in the specular beam of reflection high‐energy electron diffraction patterns during growth of Si(001) and Ge(001) by molecular beam epitaxy. The reported results demonstrate the dependence of the amplitude and damping of the oscillations on different parameters such as substrate temperature, electron beam angle of incidence, and azimuth.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Forward bias induced annealing of the E center in silicon

C. E. Barnes and G. A. Samara

Appl. Phys. Lett. 48, 934 (1986); http://dx.doi.org/10.1063/1.96663 (3 pages) | Cited 14 times

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It has been well established that the annealing of the E center (phosphorus vacancy) in Si is charge state dependent with the recovery proceeding more rapidly in the neutral charge state than in the negative state. Herein, we report for the first time a third annealing condition with a strongly enhanced annealing rate for the E center: forward bias induced recovery with a significantly lower activation energy of 0.48 eV.
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61.72.Bb Theories and models of crystal defects
61.72.jn Color centers
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.jd Vacancies
61.72.jj Interstitials

Roles of shallow and deep electron traps causing backgating in GaAs metal‐semiconductor field‐effect transistors

Ravi Khanna and Mukunda B. Das

Appl. Phys. Lett. 48, 937 (1986); http://dx.doi.org/10.1063/1.96664 (3 pages) | Cited 2 times

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In GaAs metal‐semiconductor field‐effect transistors under backgating conditions, electrons can be trapped in ‘‘shallow’’ and deep trap levels. It is shown that the characteristics of these traps can be determined and those responsible for backgating can be identified by examining the thermally excited emission currents under zero‐bias short‐circuit conditions. It is established, for the first time, that there are ‘‘shallow’’ traps located under the field‐effect transistor active channel, and possibly related to the ion‐implantation damage, that are directly related to the backgating, although the process is initiated due to filling of deep levels by electrons near the surface of the semi‐insulating GaAs.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.30.De Semiconductor-device characterization, design, and modeling

Al0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates

R. K. Tsui, G. D. Kramer, J. A. Curless, and M. S. Peffley

Appl. Phys. Lett. 48, 940 (1986); http://dx.doi.org/10.1063/1.96665 (3 pages) | Cited 19 times

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In many instances the intrinsic photoluminescence at low temperatures of (Al,Ga)As/GaAs single quantum well structures grown by molecular beam epitaxy is weak and broad, unlike the case for most multiple quantum well structures. This is believed to be due to the microscopic roughness of the first GaAs‐on‐top‐of‐(Al,Ga)As interface. By using substrates misoriented appropriately from nominal (100) such that Al0.3Ga0.7As barrier layers with smooth surface morphology could be obtained at a growth temperature of 650 °C, we have grown structures with a single 100‐Å‐wide GaAs well. The structures grown on misoriented substrates showed stronger and sharper (as narrow as 1.8 meV) intrinsic emission peaks at 4.2 K. The improvement is believed to be due to the growth of smoother interfaces.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.40.Fy Semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

High‐energy stimulated emission in GaAs quantum wells coupled with (Si2)x(GaAs)1−x barriers (ℏω≳EL, EX)

K. C. Hsieh, R. W. Kaliski, N. Holonyak, R. D. Burnham, R. L. Thornton, and T. L. Paoli

Appl. Phys. Lett. 48, 943 (1986); http://dx.doi.org/10.1063/1.96666 (3 pages) | Cited 7 times

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Data are presented showing that a small GaAs quantum well (Lz≊80 Å), the middle third of which is replaced with a (Si2)x(GaAs)1−x ‘‘barrier’’ (27 Å, x≳0.2), is capable of stimulated emission (77 K) at energies ℏω≳EL(Si+GaAs), EX(Si+GaAs).
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78.45.+h Stimulated emission
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
42.55.Px Semiconductor lasers; laser diodes
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Mercury cadmium telluride solar cell with 10.6% efficiency

Bulent M. Basol and Eric S. Tseng

Appl. Phys. Lett. 48, 946 (1986); http://dx.doi.org/10.1063/1.96667 (3 pages) | Cited 33 times

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Cd‐rich mercury cadmium telluride (MCT) is a promising material for thin‐film solar cell applications. In this letter we present data on the deposition of MCT films by a simple electroplating technique and report on the highest efficiency polycrystalline MCT thin‐film solar cell to date, which has an efficiency of 10.6% under AM1.5 illumination.
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84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.40.+w Photoconduction and photovoltaic effects
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Resonance frequencies of a ring fluxon oscillator

Fabio Marchesoni

Appl. Phys. Lett. 48, 949 (1986); http://dx.doi.org/10.1063/1.96668 (3 pages) | Cited 3 times

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The behavior of a long ring Josephson transmission line (fluxon oscillator) is analyzed in the presence of a bias dc current. The conditions of stability for fluxon oscillations and the dependence of their frequnecy on both the intensity of the bias current and the radius of the line are determined analytically. A splitting of the fundamental resonance band is predicted to take place in ring fluxon oscillators with finite radius.
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84.40.Az Waveguides, transmission lines, striplines
74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
84.30.Ng Oscillators, pulse generators, and function generators
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